CN103981573A - Method for improving curie temperature of perovskite structure ferroelectric material - Google Patents
Method for improving curie temperature of perovskite structure ferroelectric material Download PDFInfo
- Publication number
- CN103981573A CN103981573A CN201410215608.6A CN201410215608A CN103981573A CN 103981573 A CN103981573 A CN 103981573A CN 201410215608 A CN201410215608 A CN 201410215608A CN 103981573 A CN103981573 A CN 103981573A
- Authority
- CN
- China
- Prior art keywords
- ferroelectric material
- perovskite structure
- curie temperature
- ferroelectric
- general formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a method for improving curie temperature of a perovskite structure ferroelectric material. The method is characterized by comprising the following steps: (1) carrying out material synthesis in air, and adding a bivalent oxide of Mn<2+> in the synthesis step as an additive or forming Mn<2+> after high-temperature treatment, thus obtaining the perovskite structure ferroelectric material of which the general formula is AB(1-x)MnxO3 after burdening; (2) aging the obtained perovskite structure ferroelectric material in air at room temperature or polarizing along the single crystal <001> direction. Compared with the prior art, the method has the advantages that the B-bit burdening mode is replaced with the Mn<2+>, and combined with aging or polarizing along the <001> direction, so that the curie temperature of the perovskite structure ferroelectric material is obviously improved, meanwhile, the overall treatment cost is low, the treatment difficulty is small, and popularization and application are facilitated.
Description
Technical field
The present invention relates to a kind of perovskite structure ferroelectric material treatment process.
Background technology
Ferroelectric material is that one has spontaneous polarization, and spontaneous polarization is under External Electrical Field, and the material of reorientation can occur.It is the very important electronic material of a class, can be widely used in the fields such as PZT (piezoelectric transducer), ferroelectric memory, infrared eye, piezoelectric transducer.Ferroelectric material can be block ceramic polycrystalline material, monocrystal material, and the forms such as film exist.It is exactly that it has Curie temperature that ferroelectric material has an important feature, and below Curie temperature, ferroelectric material is ferroelectric phase, has spontaneous polarization.Exceed Curie temperature, ferroelectric material becomes Paraelectric cubic phase from tetragonal phase converting, loses ferroelectricity, corresponding piezoelectricity, and the electric properties such as pyroelectric all disappear.Therefore the height of Curie temperature is an important parameter index of ferroelectric material.
The material of perovskite structure is most important a kind of material in the middle of ferroelectric material, and his chemical general formula can be write as ABO
3, A position can be Ca, Ba, and Pb, Bi, K, Na etc., in occupation of the vertex position of cubic cell; B position can be Ti, Nb, and Mg, Zn, In, Zr etc., in occupation of the position, body-centered of cubic cell; And O is in occupation of the center of area position of cubic cell, crystalline structure as shown in Figure 1.Utilize different element combinations can form different ferroelectric materials, as: Pb (Zr
xti
1-x) O
3, BaTiO
3, Ba
xca
1-xtiO
3, (1-x) (K
1/2na
1/2) NbO
3-xLiNbO
3, (1-x) (Bi
1/2na
1/2) TiO
3-xBaTiO
3, (1-x) Pb (Mg
1/3nb
2/3) O
3-xPbTiO
3, (1-x) Pb (Zn
1/3nb
2/3) O
3-xPbTiO
3deng.
The Curie temperature of the ferroelectric material of tradition preparation mainly depends on the chemical composition of material, namely usually said chemical process.But in improving Curie temperature, be accompanied by the decline of the ferroelectric electric property of perovskite structure.Such as at (1-x) Pb (Zn
1/3nb
2/3) O
3-xPbTiO
3in solid solution ferroelectrics, along with PbTiO
3content increase, its Curie temperature increases, in the time that material converts cubic ferroelectric phase to, its piezoelectric property is accompanied by very large reduction.Same other ferroelectrics also has similar character, seemingly contradiction of electric property and Curie temperature.But physical method can further improve the Curie temperature of material, namely after the chemical composition of material is fixed up, can improve when in use the Curie temperature of material by adding extra electric field and stress etc. to ferroelectric material, but this method often makes ferroelectric material in application, greatly increase difficulty and the use cost of use.Therefore be necessary to invent a kind of simple physical method and improve the Curie temperature of ferroelectric material.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method that can improve perovskite structure ferroelectric material Curie temperature for the above-mentioned state of the art.
The present invention solves the problems of the technologies described above adopted technical scheme: a kind of method that improves perovskite structure ferroelectric material Curie temperature, is characterized in that comprising the steps:
1. material synthesizes in air and carries out, and adds Mn in synthesis step
2+positive oxides, divalent become Mn as additive or after pyroprocessing
2+, after batching, obtaining general formula is AB
1-xmn
xo
3perovskite structure ferroelectric material, this perovskite structure ferroelectric material aerobic room produces, the A in this general formula occupies the vertex position of cubic cell, A is at least one in Ca, Ba, Pb, Bi, K, Na; B in this general formula occupies the position, body-centered of cubic cell, and B is Ti, Nb, Mg, Zn, In, at least one in Zr; O in this general formula occupies the center of area position of cubic cell; Mn in this general formula
2+the batching of Substitute For Partial B position; X in this general formula meets: 0.03>=x>=0.01, and maximum doping solubility is taking the material that do not occur non-perovskite structure in material as criterion;
2. the perovskite structure ferroelectric material of above-mentioned acquisition is aging or apply the direction polarization along monocrystalline <001> in air at room temperature.
As preferably, step 1. described in general formula AB
1-xmn
xo
3corresponding ferroelectric material ABO
3during for Tetragonal ferroelectric material, step 2. middle employing is aging in air at room temperature, and described Tetragonal ferroelectric material at room temperature has grand farmland Tetragonal, and the spontaneous polarization direction in farmland is <001> direction.Further, described Tetragonal ferroelectric material is polycrystalline ceramic or multidomain ferro-electricity single crystal.
As preferably, described Tetragonal ferroelectric material is BaTiO
3or Ba
0.85ca
0.15zr
0.1ti
0.9o
3.
For Ba
0.85ca
0.15zr
0.1ti
0.9o
3can adopt preferred steps:
Adopt pure BaCO
3, CaCO
3, ZrO
2, TiO
2, MnCO
37.526g weighs respectively, 0.673g, 0.547g, 3.198g, 0.069g puts into ball grinder mixing and ball milling, ball milling condition: the volume ratio of the volume of raw material, agate ball volume, ball-milling medium dehydrated alcohol is 1:1:1.5, by its ball milling 10 hours, the raw material after ball milling was put into baking oven and is dried 5 hours at 80 DEG C; Prepared using tabletting machine after drying is become to the raw material idiosome of diameter 40mm at 20Mpa lower sheeting, a raw embryo after having pressed slice is put into box-type furnace pre-burning, pre-burning condition is 1200 DEG C of insulations 4 hours, synthetic bulk sample is pulverized, clay into power and sieve, by its ball milling 10 hours, again put at 80 DEG C, baking oven and dry for 5 hours; Finally, the ratio that the powder after drying is added to 1ml PVA (polyvinyl alcohol) tackiness agent in 10g powder is ground, and wears into uniform powder, by 80 order sieve 3 times, the weighing quality of milled powder is 0.500 gram, depresses to the small pieces that diameter is 13mm, at Al at 2MPa
2o
3on pad, spread 98% ZrO
2powder, and with ZrO
2powder covers the small pieces that press, and puts it into sintering in box-type furnace, and sintering condition is 1450 DEG C of insulations 4 hours; After pyroprocessing ceramic room temperature be Tetragonal Ba
0.85ca
0.15(Zr
0.1ti
0.9)
0.99mn
0.01o
3.Ceramic plate is placed in air to aged at room temperature, digestion time 1 day～15 days.
Synthesis phase at material adopts Mn
2+positive oxides, divalent as additive, when batching, adopt additive to replace the mode of B position and prepare burden, be i.e. AB
1-xmn
xo
3batching, wherein the doping solubility of x maximum is taking the material that do not occur non-perovskite structure in material as criterion.In the preparation process of material, all chemical reactions that relate to all carry out in air.According to electricity price equilibrium principle, the B of+4 valencys
4+the Mn of quilt+divalent
2+replace, in order to keep the electric neutrality of material, prepared ferroelectric material out produces aerobic room, and also the chemical formula of the material of preparation is write as: AB
1-xmn
xo
3-x.6 centroid structures of the oxygen room of the ferroelectric material just having prepared in cubic cell are stochastic distribution, are also defect dipole
towards six <001> direction random orientations of structure cell.
defect dipole if arrange towards a specific direction in ferroelectric material, is also
defect dipole is ordered arrangement, forms defect dipole D', and defect dipole D' is equivalent to apply an extra electric field to material, and this increases the Curie temperature that causes material.Ferroelectrics is from low-temperature heat to high temperature Curie temperature, ferroelectrics becomes cube paraelectric phase from ferroelectric tetragonal phase converting, and the spontaneous polarization direction of ferroelectric Tetragonal is <001> direction, make ferroelectric Curie temperature increase, ferroelectric
defect dipole must be along the orderly arrangement of <001> direction.According to the different characteristics of substrate material, the physical method of aftertreatment is also different to some extent.
(2) according to the elaboration of (1), the normal ferroelectric material that is Tetragonal for room temperature, as BaTiO
3, and sosoloid Ba
0.85ca
0.15zr
0.1ti
0.9o
3deng, it has grand farmland Tetragonal in room temperature, and the spontaneous polarization direction in farmland is <001> direction, for the ferroelectric multidomain material just having prepared, due to defect dipole
in farmland, arrange along 6 <001> directions at random, so be the macroscopical dipole polarization intensity of formation in farmland.But be placed on aged at room temperature, because spontaneous polarization forms built in field, oxygen room under the effect of built in field
in ferroelectric domain, move, make defect dipole
orientation the same with spontaneous polarization direction, set up spontaneous polarization strength direction and defect dipole direction.The defect dipole aligning
also form built in field, and built-in electric field will be stablized ferroelectric phase, thereby obtain higher Curie temperature.Due to built in field can be spontaneous in ferroelectric domain, carry out, so described material can be polycrystalline ceramic or multidomain ferro-electricity single crystal.
As preferably, step 1. described in general formula AB
1-xmn
xo
3corresponding ferroelectric material ABO
3during for Pb-Based Relaxor Ferroelectric Materials, step 2. middle employing applies the direction polarization along monocrystalline <001>.Further, described Pb-Based Relaxor Ferroelectric Materials is (1-x1) Pb (Mg
1/3nb
2/3) O
3-x1PbTiO
3, x1≤0.35, (1-x2) Pb (Zn
1/3nb
2/3) O
3-x2PbTiO
3, x2≤0.09.
Ferroelectric-para-electric changes and occurs in a larger temperature range, and this class material is relaxation phase in room temperature, and they do not have grand domain structure, so the built in field of spontaneous polarization can not make oxygen room
in ferroelectric domain, move, thereby can not set up defect electric field by aging.In order to make defect dipole
arrangement can arrange along the <001> direction of ferroelectric Tetragonal, so should apply electric field along <001> direction, make
in ferroelectric domain, move, thereby set up orderly defect dipole
.Because pottery is polycrystalline material, cannot apply built in field along specific <001> orientation, so for relaxation ferroelectric, can only realize and utilize additional electric field polarization, make the positive divalence Mn after polarization on single crystal
2+the Curie temperature that replaces the relaxor ferroelectric monocrystal of B position increases.
Further, step applies the spontaneous polarization direction <001> direction that the direction of electric field is ferroelectric Tetragonal in 2., and polarized electric field is 0.2～2kV/mm.
For 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3can adopt preferred steps:
By pure PbO, MgO, Nb
2o
5, TiO
2according to 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3in raw material stoichiometric ratio batching, when batching, add MnCO
3as additive, make Mn replace 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3mg in crystal, Nb, Ti, replacement amount is 0.3% molar content; Joined raw material is fully mixed, and then inclosure is directly the platinum crucible of 55 millimeters, utilizes 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3for seed crystal, grow along <111> direction, raw material, 1300～1400 DEG C of materials, then utilizes the velocity pull-down of degrowth stove instrument 1-2mm per hour, and the crystal growing out is just the 0.95Pb (Zn that the B position of 0.3% mole of manganese doping replaces
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
3, by the 0.95Pb (Zn growing
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
3monocrystalline utilizes direction finder orientation, makes <001> direction, at room temperature, applies the electric field 30 minutes of a 1kV/mm to the single-chip of <001> orientation.
Compared with prior art, the invention has the advantages that: adopt Mn
2+replace B position batching mode, in conjunction with aging or <001> direction polarization, the ferroelectric material Curie temperature of perovskite structure is significantly improved, the processing cost of entirety is lower simultaneously, intractability is also less, is beneficial to and applies.
Brief description of the drawings
Fig. 1 is the crystal structural scheme of mechanism of uhligite in prior art.
Fig. 2 is the crystal structural scheme of mechanism of the rear uhligite that in embodiment 1, B position replaces.
Fig. 3 is the crystal structural scheme of mechanism of the uhligite of defect dipole orderly in embodiment 1.
Fig. 4 is related to schematic diagram between domain structure and defect dipole in the ferroelectric material just having prepared in embodiment 1.
Fig. 5 is related to schematic diagram between domain structure and defect dipole in the ferroelectric material of defect dipole of ordered arrangement in embodiment 1.
(Ba in Fig. 6 embodiment 1
0.85ca
0.15(Zr
0.1ti
0.9)
0.99mn
0.01o
3the dielectric temperature spectrum comparison diagram of aging 15 days of ceramic plate and unaged sample.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention.
Embodiment 1, the BaCO of employing purity 99.95%
3, 99.99% CaCO
3, 99.99% ZrO
2, 99.8% TiO
2, analytically pure MnCO
3raw material, 7.526g weighs respectively, 0.673g, 0.547g, 3.198g, 0.069g puts into ball grinder mixing and ball milling, ball milling condition: the volume ratio of the volume of raw material, agate ball volume, ball-milling medium dehydrated alcohol approximates greatly 1:1:1.5, by its ball milling 10 hours, the raw material after ball milling was put into baking oven and is dried 5 hours at 80 DEG C.Then, prepared using tabletting machine after drying is become to the raw material idiosome of diameter 40mm at 20Mpa lower sheeting, a raw embryo after having pressed slice is put into the pre-burning of KBF1700 box-type furnace, pre-burning condition is 1200 DEG C of insulations 4 hours, synthetic bulk sample is pulverized, clay into power and sieve, by its ball milling 10 hours, again put at 80 DEG C, baking oven and dry for 5 hours.Finally, the ratio that the powder after drying is added to 1ml PVA (polyvinyl alcohol) tackiness agent in 10g powder is ground, and wears into uniform powder, by 80 order sieve 3 times, the weighing quality of milled powder is 0.500 gram, depresses to the small pieces that diameter is 13mm, at Al at 2MPa
2o
3on pad, spread 98% ZrO
2powder, and with ZrO
2powder covers the small pieces that press, and puts it into sintering in box-type furnace, and sintering condition is 1450 DEG C of insulations 4 hours.After pyroprocessing ceramic room temperature be Tetragonal Ba
0.85ca
0.15(Zr
0.1ti
0.9)
0.
99mn
0.01o
3.Ceramic plate is placed in air, and aged at room temperature, after the aging different time, utilizes the dielectric temperature spectrum of electric impedance analyzer test ceramic plate, and the corresponding temperature of specific inductivity maximum value is the Curie temperature of ferroelectric ceramic material.The Curie temperature T of material after aging 15 days as can be seen from Figure 6
cthan the Curie temperature of aging one day material large 3 DEG C, description defect dipole is after aged at room temperature, and defect dipole aligns in ferroelectric domain, by this aging effect, and ferroelectric Ba
0.85ca
0.15(Zr
0.1ti
0.9)
0.99mn
0.01o
3the Curie temperature of pottery has obtained enhancing.
In the preparation process of material, all chemical reactions that relate to all carry out in air.According to electricity price equilibrium principle, the B of+4 valencys
4+the Mn of quilt+divalent
2+replace, in order to keep the electric neutrality of material, prepared ferroelectric material out produces aerobic room, and also the chemical formula of the material of preparation is write as: Ba
0.85ca
0.15(Zr
0.1ti
0.9)
0.99mn
0.01o
2.99.6 centroid structures of the oxygen room of the ferroelectric material just having prepared in cubic cell are stochastic distribution, are also defect dipole
towards six <001> direction random orientations of structure cell, its crystalline structure as shown in Figure 2.
defect dipole if arrange towards a specific direction in ferroelectric material, as shown in Figure 3, is also
defect dipole is ordered arrangement, forms defect dipole D', and defect dipole D' is equivalent to apply an extra electric field to material, and this increases the Curie temperature that causes material.Ferroelectrics is from low-temperature heat to high temperature Curie temperature, ferroelectrics becomes cube paraelectric phase from ferroelectric tetragonal phase converting, and the spontaneous polarization direction of ferroelectric Tetragonal is <001> direction, make ferroelectric Curie temperature increase, ferroelectric
defect dipole must be along the orderly arrangement of <001> direction.According to the different characteristics of substrate material, the physical method of aftertreatment is also different to some extent.
Ba
0.85ca
0.15zr
0.1ti
0.9o
3have grand farmland Tetragonal in room temperature, the spontaneous polarization direction in farmland is <001> direction, for the ferroelectric multidomain material just having prepared, due to defect dipole
in farmland, arrange at random along 6 <001> directions, so be the macroscopical dipole polarization intensity of formation in farmland, its spontaneous polarization direction and defect dipole direction are as shown in Figure 4.But be placed on aged at room temperature, because spontaneous polarization forms built in field, oxygen room under the effect of built in field
in ferroelectric domain, move, make defect dipole
orientation the same with spontaneous polarization direction, set up spontaneous polarization strength direction and defect dipole direction as shown in Figure 5.The defect dipole aligning
also form built in field, and built-in electric field will be stablized ferroelectric phase, thereby obtain higher Curie temperature.Due to built in field can be spontaneous in ferroelectric domain, carry out, so material can be polycrystalline ceramic or multidomain ferro-electricity single crystal.
Embodiment 2, by high-purity PbO, MgO, Nb
2o
5, TiO
2according to 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3in raw material stoichiometric ratio batching, when batching, add MnCO
3as additive, make Mn replace 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3mg in crystal, Nb, Ti, replacement amount is 0.3% molar content.Joined raw material is fully mixed, and then inclosure is directly the platinum crucible of 55 millimeters, utilizes 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3for seed crystal, grow along <111> direction, raw material, 1300～1400 DEG C of materials, then utilizes the velocity pull-down of degrowth stove instrument 1-2mm per hour, and the crystal growing out is just the 0.95Pb (Zn that the B position of 0.3% mole of manganese doping replaces
1/3nb
2/3) O
3-0.05PbTiO
3monocrystalline, also can be write as chemical formula 0.95Pb (Zn
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
2.997.By the 0.95Pb (Zn growing
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
2.997monocrystalline utilizes direction finder orientation, makes <001> direction, then utilizes inner circle cutting machine that monocrystalline is cut, and single-chip is ground, by upper silver electrode.The dielectric temperature spectrum of utilizing the crystal wafer of electric impedance analyzer test <001> orientation, the corresponding temperature of specific inductivity maximum value is the Curie temperature of the material of ferroelectric <001> orientation.The Curie temperature of <001> direction single-chip dielectric temperature spectrum display material is 175 DEG C, and monocrystalline becomes cube paraelectric phase from ferroelectric tetragonal phase converting.Due to 0.95Pb (Zn
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
2.997for relaxation ferroelectric, the farmland of the monocrystalline growing out is nanometer domain structure.In order to make ferroelectrics 0.95Pb (Zn
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
2.997in defect dipole
the directed spontaneous polarization direction <001> along Tetragonal ferroelectric domain arranges, in room temperature, apply the electric field 30 minutes of a 1kV/mm to the single-chip of <001> orientation, and then the dielectric temperature of test material spectrum, the Curie temperature of dielectric temperature spectrum material is increased to 190 DEG C, comparing that not polarization processes the Curie temperature of crystal wafer increased by 20 DEG C.This has proved to adulterate by Mn, then along <001> direction polarization, can increase the Curie temperature of relaxor ferroelectric monocrystal.
Ferroelectric-para-electric changes and occurs in a larger temperature range, and this class material is relaxation phase in room temperature, and they do not have grand domain structure, so the built in field of spontaneous polarization can not make oxygen room
in ferroelectric domain, move, thereby can not set up defect electric field by aging.In order to make defect dipole
arrangement can arrange along the <001> direction of ferroelectric Tetragonal, so should apply electric field along <001> direction, make
in ferroelectric domain, move, thereby set up orderly defect dipole
.Because pottery is polycrystalline material, cannot apply built in field along specific <001> orientation, so for relaxation ferroelectric, can only realize and utilize additional electric field polarization, make the positive divalence Mn after polarization on single crystal
2+the Curie temperature that replaces the relaxor ferroelectric monocrystal of B position increases.
Claims (9)
1. improve a method for perovskite structure ferroelectric material Curie temperature, it is characterized in that comprising the steps:
1. material synthesizes in air and carries out, and adds Mn in synthesis step
2+positive oxides, divalent become Mn as additive or after pyroprocessing
2+, after batching, obtaining general formula is AB
1-xmn
xo
3perovskite structure ferroelectric material, this perovskite structure ferroelectric material aerobic room produces, the A in this general formula occupies the vertex position of cubic cell, A is at least one in Ca, Ba, Pb, Bi, K, Na; B in this general formula occupies the position, body-centered of cubic cell, and B is Ti, Nb, Mg, Zn, In, at least one in Zr; O in this general formula occupies the center of area position of cubic cell; Mn in this general formula
2+the batching of Substitute For Partial B position; X in this general formula meets: 0.03>=x>=0.01;
2. the perovskite structure ferroelectric material of above-mentioned acquisition is aging or apply the direction polarization along monocrystalline <001> in air at room temperature.
2. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 1, is characterized in that general formula AB described in step 1.
1-xmn
xo
3corresponding ferroelectric material ABO
3during for Tetragonal ferroelectric material, step 2. middle employing is aging in air at room temperature, and described Tetragonal ferroelectric material at room temperature has grand farmland Tetragonal, and the spontaneous polarization direction in farmland is <001> direction.
3. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 2, is characterized in that described Tetragonal ferroelectric material is polycrystalline ceramic or multidomain ferro-electricity single crystal.
4. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 3, is characterized in that described Tetragonal ferroelectric material is BaTiO
3or Ba
0.85ca
0.15zr
0.1ti
0.9o
3.
5. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 4, is characterized in that comprising the steps:
Adopt pure BaCO
3, CaCO
3, ZrO
2, TiO
2, MnCO
37.526g weighs respectively, 0.673g, 0.547g, 3.198g, 0.069g puts into ball grinder mixing and ball milling, ball milling condition: the volume ratio of the volume of raw material, agate ball volume, ball-milling medium dehydrated alcohol is 1:1:1.5, by its ball milling 10 hours, the raw material after ball milling was put into baking oven and is dried 5 hours at 80 DEG C; Prepared using tabletting machine after drying is become to the raw material idiosome of diameter 40mm at 20Mpa lower sheeting, a raw embryo after having pressed slice is put into box-type furnace pre-burning, pre-burning condition is 1200 DEG C of insulations 4 hours, synthetic bulk sample is pulverized, clay into power and sieve, by its ball milling 10 hours, again put at 80 DEG C, baking oven and dry for 5 hours; Finally, the powder ratio that adds 1ml poly (vinyl alcohol) binder in 10g powder after drying is ground, wear into uniform powder, by 80 order sieve 3 times, the weighing quality of milled powder is 0.500 gram, depresses to the small pieces that diameter is 13mm, at Al at 2MPa
2o
3on pad, spread 98% ZrO
2powder, and with ZrO
2powder covers the small pieces that press, and puts it into sintering in box-type furnace, and sintering condition is 1450 DEG C of insulations 4 hours; After pyroprocessing ceramic room temperature be Tetragonal Ba
0.85ca
0.15(Zr
0.1ti
0.9)
0.99mn
0.01o
3.Ceramic plate is placed in air to aged at room temperature, digestion time 1 day～15 days.
6. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 1, is characterized in that general formula AB described in step 1.
1-xmn
xo
3corresponding ferroelectric material ABO
3during for Pb-Based Relaxor Ferroelectric Materials, step 2. middle employing applies the direction polarization along monocrystalline <001>.
7. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 6, is characterized in that described Pb-Based Relaxor Ferroelectric Materials is (1-x1) Pb (Mg
1/3nb
2/3) O
3-x1PbTiO
3, x1≤0.35, (1-x2) Pb (Zn
1/3nb
2/3) O
3-x2PbTiO
3, x2≤0.09.
8. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 7, the spontaneous polarization direction <001> direction that the direction that it is characterized in that applying during step is 2. electric field is ferroelectric Tetragonal, and polarized electric field is 0.2～2kV/mm.
9. the method for raising perovskite structure ferroelectric material Curie temperature according to claim 7, is characterized in that comprising the steps:
By pure PbO, MgO, Nb
2o
5, TiO
2according to 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3in raw material stoichiometric ratio batching, when batching, add MnCO
3as additive, make Mn replace 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3mg in crystal, Nb, Ti, replacement amount is 0.3% molar content; Joined raw material is fully mixed, and then inclosure is directly the platinum crucible of 55 millimeters, utilizes 0.95Pb (Zn
1/3nb
2/3) O
3-0.05PbTiO
3for seed crystal, grow along <111> direction, raw material, 1300～1400 DEG C of materials, then utilizes the velocity pull-down of degrowth stove instrument 1-2mm per hour, and the crystal growing out is just the 0.95Pb (Zn that the B position of 0.3% mole of manganese doping replaces
1/3nb
2/3)
0.997mn
0.003o
3-0.05PbTi
0.997mn
0.003o
3, by the 0.95Pb (Zn growing
1/3nb
2/3)
0.997mn
0.003o
2.997-0.05PbTi
0.997mn
0.003o
3monocrystalline utilizes direction finder orientation, makes <001> direction, at room temperature, applies the electric field 30 minutes of a 1kV/mm to the single-chip of <001> orientation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410215608.6A CN103981573B (en) | 2014-05-21 | 2014-05-21 | The method improving perovskite structure ferroelectric material Curie temperature |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410215608.6A CN103981573B (en) | 2014-05-21 | 2014-05-21 | The method improving perovskite structure ferroelectric material Curie temperature |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103981573A true CN103981573A (en) | 2014-08-13 |
| CN103981573B CN103981573B (en) | 2016-08-24 |
Family
ID=51273736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410215608.6A Expired - Fee Related CN103981573B (en) | 2014-05-21 | 2014-05-21 | The method improving perovskite structure ferroelectric material Curie temperature |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103981573B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104310995A (en) * | 2014-09-24 | 2015-01-28 | 陕西理工学院 | Thick BZT film having EC effect, and its making method |
| CN107352583A (en) * | 2017-06-29 | 2017-11-17 | 宁波吉电鑫新材料科技有限公司 | A kind of electric field regulation and control selective freezing synthesis double-perovskite Magnesium ion battery negative material and preparation method thereof |
| CN107611251A (en) * | 2016-07-11 | 2018-01-19 | 中国科学院福建物质结构研究所 | A kind of piezoelectric and preparation method thereof |
| CN109256385A (en) * | 2017-07-14 | 2019-01-22 | 爱思开海力士有限公司 | The manufacturing method of ferroelectric memory device |
| CN112537799A (en) * | 2019-09-20 | 2021-03-23 | 中国科学院物理研究所 | Method for regulating oxygen vacancy sequence phase of perovskite phase cobalt oxide material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051685A (en) * | 2009-10-28 | 2011-05-11 | 中国科学院福建物质结构研究所 | Novel ferroelectric single-crystal lead ytterbium niobate-lead magnesium niobate-lead titanate |
| JP2013216565A (en) * | 2012-03-16 | 2013-10-24 | Canon Inc | Piezoelectric material, piezoelectric element, and electronic apparatus |
| CN103636018A (en) * | 2011-07-05 | 2014-03-12 | 佳能株式会社 | Piezoelectric material |
-
2014
- 2014-05-21 CN CN201410215608.6A patent/CN103981573B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102051685A (en) * | 2009-10-28 | 2011-05-11 | 中国科学院福建物质结构研究所 | Novel ferroelectric single-crystal lead ytterbium niobate-lead magnesium niobate-lead titanate |
| CN103636018A (en) * | 2011-07-05 | 2014-03-12 | 佳能株式会社 | Piezoelectric material |
| JP2013216565A (en) * | 2012-03-16 | 2013-10-24 | Canon Inc | Piezoelectric material, piezoelectric element, and electronic apparatus |
Non-Patent Citations (6)
| Title |
|---|
| LAIHUI LUO，等: "Effects of Mn doping on dielectric and piezoelectric properties of 0.71Pb(Mg1∕3Nb2∕3)O3 – 0.29PbTiO3 single crystals", 《APPLIED PHYSICS LETTERS》, vol. 90, 8 March 2007 (2007-03-08), XP012093483, DOI: doi:10.1063/1.2711533 * |
| LAIHUI LUO，等: "Growth and characteristics of Mn-doped PMN-PT single crystals", 《SOLID STATE COMMUNICATIONS》, vol. 149, 24 April 2009 (2009-04-24), pages 978 - 981, XP026138921, DOI: doi:10.1016/j.ssc.2009.04.018 * |
| LAIHUI LUO，等: "Tuning the functional properties of PMN-PT single crystals via doping and thermoelectrical treatments", 《JOURNAL OF APPLIED PHYSICS》, vol. 114, 13 December 2013 (2013-12-13), XP012179518, DOI: doi:10.1063/1.4847975 * |
| QINGYING YUE，等: "Aging effect of Mn-doped Ba0.77Ca0.23TiO3 ceramics", 《JOURNAL OF ALLOYS AND COMPOUNDS》, vol. 610, 14 May 2014 (2014-05-14), pages 276 - 280 * |
| 李璐: "(Ba，Ca)(Ti，Zr)O3无铅压电陶瓷的制备与性能研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》, 15 January 2014 (2014-01-15), pages 042 - 43 * |
| 鞠少功: "锆钛酸钡钙基陶瓷与薄膜的电性能研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》, 15 September 2012 (2012-09-15), pages 020 - 169 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104310995A (en) * | 2014-09-24 | 2015-01-28 | 陕西理工学院 | Thick BZT film having EC effect, and its making method |
| CN104310995B (en) * | 2014-09-24 | 2016-04-13 | 陕西理工学院 | A kind of BZT thick film with EC effect and preparation method thereof |
| CN107611251A (en) * | 2016-07-11 | 2018-01-19 | 中国科学院福建物质结构研究所 | A kind of piezoelectric and preparation method thereof |
| CN107352583A (en) * | 2017-06-29 | 2017-11-17 | 宁波吉电鑫新材料科技有限公司 | A kind of electric field regulation and control selective freezing synthesis double-perovskite Magnesium ion battery negative material and preparation method thereof |
| CN107352583B (en) * | 2017-06-29 | 2018-10-23 | 宁波吉电鑫新材料科技有限公司 | A kind of double-perovskite Magnesium ion battery negative material of electric field regulation and control selective freezing synthesis |
| CN109256385A (en) * | 2017-07-14 | 2019-01-22 | 爱思开海力士有限公司 | The manufacturing method of ferroelectric memory device |
| CN112537799A (en) * | 2019-09-20 | 2021-03-23 | 中国科学院物理研究所 | Method for regulating oxygen vacancy sequence phase of perovskite phase cobalt oxide material |
| CN112537799B (en) * | 2019-09-20 | 2021-09-28 | 中国科学院物理研究所 | Method for regulating oxygen vacancy sequence phase of perovskite phase cobalt oxide material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103981573B (en) | 2016-08-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sun et al. | Effects of CuO additive on structure and electrical properties of low-temperature sintered Ba0. 98Ca0. 02Zr0. 02Ti0. 98O3 lead-free ceramics | |
| Binhayeeniyi et al. | Physical and electromechanical properties of barium zirconium titanate synthesized at low-sintering temperature | |
| Malik et al. | Enhanced electromechanical properties of (1-x) BiFeO3–BaTiO3–xLiNbO3 ceramics by quenching process | |
| CN103981573A (en) | Method for improving curie temperature of perovskite structure ferroelectric material | |
| CN102910902B (en) | BNT-BT-BKT-based perovskite system multielement lead-free piezoelectric ceramic and production method thereof | |
| CN106220169B (en) | Modified lead nickle niobate-lead titanate piezoelectric ceramics and preparation method thereof | |
| CN103304235B (en) | A kind of production method of thin brilliant high strength PMN-PZT piezoceramic material | |
| CN101628810B (en) | High transparent and high electro-optical property doped PMN-PT electro-optic ceramic material and preparation method thereof | |
| CN102924078A (en) | BCTZ-based perovskite system multi-component lead-free piezoelectric ceramic and preparation method thereof | |
| CN105198417A (en) | Preparation method of zirconic acid sodium bismuthide lithium cerium doped potassium-sodium niobate based ceramic material | |
| CN110981468A (en) | Preparation method of sodium bismuth titanate-based piezoelectric ceramic | |
| CN101786880B (en) | Sodium potassium niobate-potassium lithium niobate piezoelectric ceramics and preparation method thereof | |
| CN101962292A (en) | Alkali metal niobium-tantalum antimonite-based leadless piezoelectric ceramic and preparation method thereof | |
| CN103408303A (en) | Piezoceramic material with high stability and high-voltage-electricity performance | |
| CN110511019A (en) | A kind of BNT base Lead-free ferroelectric ceramics and preparation method thereof that response lag is effectively reduced | |
| Said et al. | Dielectric, pyroelectric, and ferroelectric properties of gadolinium doped Sr0. 53Ba0. 47Nb2O6 ceramic | |
| CN104446450B (en) | Non-plumbum ferroelectric refrigerating material and uses thereof | |
| CN102503422B (en) | Titanium-niobium-magnesium-indium acid lead pyroelectric ceramic and preparation method thereof | |
| Yun et al. | Aging-induced double hysteresis loops in bismuth-doped (Ba, Ca) TiO 3 ferroelectric ceramics | |
| CN103553590A (en) | Barium titanate-based leadless electrostrictive ceramic and preparation method thereof | |
| CN102503410B (en) | Preparation method of barium strontium titanate-lead titanate pyroelectric ceramic | |
| CN103435344B (en) | Piezoceramic material for high-frequency ceramic filter | |
| Shannigrahi et al. | Microstructure and electrical characterisations of K-modified PLZT | |
| CN110357614B (en) | Room-temperature paraelectric-ferroelectric adjustable ceramic material and preparation method thereof | |
| CN103469307A (en) | Tetragonal phase lithium-antimony-tantalum co-doped potassium niobate sodium-based piezoelectric crystal and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160824 Termination date: 20190521 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |