CN103981512A - Dual-channel nozzle structure capable of controlling reactant uniform distribution - Google Patents
Dual-channel nozzle structure capable of controlling reactant uniform distribution Download PDFInfo
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- CN103981512A CN103981512A CN201410196612.2A CN201410196612A CN103981512A CN 103981512 A CN103981512 A CN 103981512A CN 201410196612 A CN201410196612 A CN 201410196612A CN 103981512 A CN103981512 A CN 103981512A
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Abstract
The invention discloses a dual-channel nozzle structure capable of controlling reactant uniform distribution. The structure comprises a first channel and a second channel; wherein the first channel is an equal diameter cylindrical channel or a variable diameter cylindrical channel, the reactant gas in the first channel is GaCl; the second channel is arranged in the center position of the first channel, the gas in the second channel can be N2 or a mixed gas of GaCl and N2, the second channel can be a cylindrical channel, or the second channel can be composed of two sections, the upper section is in a cylindrical shape and the lower section is in an inverse circular truncated cone shape, and the diameters of the upper section and the lower section on the joint part are equal. The dual-channel structure can improve the reactant GaCl radial distribution uniformity near the substrate surface through optimizing the gas flows in the two channels, and thus the uniform growth of GaN crystal material on a large area substrate is achieved.
Description
Technical field
The present invention relates to semiconductor material growth apparatus technical field, be specially the equally distributed two channels spout structure of controllable reaction thing of a kind of hydride gas-phase epitaxy (HVPE) growth III-V family semiconductor material (film or thick film) use.
Background technology
Along with III-V family mould material is day by day remarkable with the status in the various semiconducter device of exploitation in manufacture, it also receives much concern in novel semiconductor material industry.But, the preparation of semiconductor film or thick film extensively adopts vapour phase epitaxy (VPE) technology, hydride gas-phase epitaxy (HVPE) technology wherein, because of the feature such as fast growth, production cost be low, often be used to the growth of III hi-nitride semiconductor material, the especially growth of gan (GaN) thick film.
In traditional HVPE growing system, use liquid metal gallium (Ga) and hydrogenchloride (HCl) gas of heating at high temperature to react generation metal chloride as three races's gas, then by the hydride gas of this metal chloride gas and non-metallic material (as NH
3) reaction generation semiconductor material crystal (as GaN), under normal circumstances, NH in described reactant gases
3remain sufficient quantity, i.e. NH in reaction cavity
3be evenly distributed, the thickness evenness of generation product and quality depend primarily on the distribution of metal chloride.And current vertical stratification HVPE equipment adopts donut structure shower nozzle conventionally, be from being positioned at the cylinder spout ejection of central position after metal chloride generates, its defect is that described spout is positioned at the central position of whole shower nozzle, easily cause metal chloride treat growth substrates above be the low distribution of centre concentration high rim concentration, the distributing homogeneity of metal chloride is uncontrollable.And along with increasing of the market requirement, HVPE system must improve output, along with the further increase of substrate quantity and area thereof, traditional spout structure is difficult to ensure reactant homogeneity more, causes GaN growth thickness inhomogeneous.For example, under traditional donut structure shower nozzle, because distribution center's concentration high rim concentration of metal chloride is low, cause GaN growth thickness along the substrate trend that radially outward tapers off, substrate center is grown thickly, and marginal growth obtains thin.
Patent of invention CN201310542018X, a kind of precursor flow field control rod is disclosed, by add a control rod with different control ends in precursor GaCl channel center, precursor GaCl flow field is intervened, expect to improve the homogeneity of substrate top precursor, but experimental studies have found that: by introducing after control rod, GaCl precursor homogeneity has improvement to a certain degree, but there is side reaction settling at shower nozzle wall, affected crystal growth quality.Therefore, for meeting the high-quality growth of GaN wafer on large effectively Substrate Area region, be still difficult to overcome precursor (as GaCl) difficult problem pockety (in this patent CN201310542018X, precursor is reactant) above substrate.
In order to improve reactant radially-arranged homogeneity above substrate, be necessary to improve the especially jet structure of metal chloride of shower nozzle.
Summary of the invention
For the deficiencies in the prior art, main purpose of the present invention is: a kind of two channels spout structure is provided, be mainly used to control reactant gas flow trend and distribution, described two channels spout structure can make reactant (GaCl) flow field more even near the radial distribution above substrate, is conducive on substrate gan growth thickness even.
For achieving the above object, can be achieved through the following technical solutions: the at present normal vertical or inverted reactor of cylindrosymmetric suspension that adopts in HVPE growing system, GaCl passage is positioned at the central position of shower nozzle, cylindrical.The present invention arranges other gas control channel on the basis of traditional cylindrical GaCl passage again, avoids reactant GaCl under traditional cylindrical single passage, to be the characteristic that single crest distributes, and improves GaCl radially-arranged homogeneity above substrate.
Specifically, the equally distributed two channels spout structure of a kind of controllable reaction thing of the present invention, is characterized in that, comprises first channel, second passage; Described two passage concentrics, second passage is positioned at the center of first channel; It is vapor deposition reaction reactant gas that described first channel passes into gas, as GaCl; It can be N that described second passage passes into gas
2also can be GaCl and N
2mixed gas; The flow proportional of described each gas can regulate arbitrarily; Described reactant gases can be with other reactant gasess (as NH after spraying this spout
3) generation product combines.
Described first channel, is characterized in that, it is for equal diameter or straighten footpath cylindrical channel.Preferably, its outer sleeve can form by two sections, and epimere is cylindric, and hypomere is skirt body expanding section, hypomere top and epimere bottom connecting place equal diameters; Preferably, described first channel, its outer sleeve also can form by four sections, is followed successively by from top to bottom the first cylinder, transition section, the second cylinder, skirt body expanding section, and each section of cross section expands piecemeal, section and a section connecting place equal diameters.Described second passage, is characterized in that, this passage is positioned at the central position of first channel, cylindrical, and its outer sleeve pipe Length Ratio first channel length is slightly short; Second passage also can form by two sections, and epimere is cylindrical, and hypomere is truncated cone-shaped or reverse frustoconic, two sections of connecting place equal diameters.
The above two kinds of first channel structure and three kinds of second passage structures, according to Material growth technique and specifically need, the collocation that can intersect is practical.
The equally distributed two channels spout structure of a kind of controllable reaction thing that the present invention proposes, can improve near reactant (as GaCl) radially-arranged homogeneity above substrate, can meet the demand of the even growth of GaN crystalline material in larger area.
Below in conjunction with drawings and Examples, the present invention will be further described.
Brief description of the drawings
Fig. 1 is the sectional view of the two channels spout structure of the embodiment of the present invention one.
Fig. 2 is the sectional view of the two channels spout structure of the embodiment of the present invention two.
Fig. 3 is the sectional view of the two channels spout structure of the embodiment of the present invention three.
Fig. 4 is the sectional view of the two channels spout structure of the embodiment of the present invention four.
Embodiment
In order to make the object, technical solutions and advantages of the present invention more cheer and bright, now, for 4 embodiment, the invention will be further described.
Embodiment mono-
As shown in Figure 1, the equally distributed two channels spout structure of a kind of controllable reaction thing of the present invention, is mainly made up of equal diameter cylinder 102 and variable cross-section outer sleeve 105 two portions; Outer sleeve 105 and cylinder 102 are concentric; Described variable cross-section outer sleeve 105 comprises cylindrical section and hypomere skirt body expanding section, and this skirt body expanding section cross section expands from top to bottom gradually; These cylinder 102 outer walls and variable cross-section outer sleeve 105 inwalls form first channel 104, and in first channel 104, institute's reactant gas that passes into 106 is GaCl, and described cylinder 102 hollow spaces are second passage 101, and in second passage 101, institute's gas that passes into 103 is GaCl and N
2mixed gas, regulate GaCl and N
2flow proportional, and gas flow size in second passage 101, first channel 104, optimizes near the radially-arranged homogeneity of reactant GaCl gas treating above growth substrates.
Embodiment bis-
Two channels spout structure as shown in Figure 2, comprises first channel 104 and second passage 101; The outer sleeve 105 of described first channel 104 forms by four sections, be followed successively by from top to bottom, the first cylinder, transition section, the second cylinder, skirt body expanding section, each section of cross circular section diameter increases from top to down piecemeal, section is GaCl with section joint equal diameters, gas that path 10 4 passes into 106; Described second passage 101 is positioned at spout structure central position, and gas that second passage 101 passes into 103 is N
2; Between first channel 104 and second passage 101, be equal diameter hollow cylinder 102, its length is slightly shorter than the length of outer sleeve 105.Regulate two channel gas uninterrupteds, can make near reactant GaCl gas radial distribution treating above growth substrates more even, obviously improve the radially homogeneity of GaN crystal growth thickness.
Embodiment tri-
Two channels spout structure as shown in Figure 3, on the basis of embodiment bis-, carry out improved to first channel 104 and the hollow cylinder 102 in the middle of second passage 101, here hollow cylinder 102 forms by two sections, its epimere is equal diameter hollow cylinder, its hypomere is that skirt body expanding section is hollow round table cylinder, two sections of joint equal diameters; Described its cross section of hollow round table cylinder expands from top to down gradually, and its expanded-angle is consistent with the expanded-angle of path 10 4 expanding sections; Described hollow cylinder 102 length are slightly shorter than path 10 4 outer sleeve 105 length.This structure, by regulating two channel gas uninterrupteds, is further improved near the radially-arranged homogeneity of reactant GaCl gas treating above growth substrates, can eliminate the growth thickness thick middle of traditional sprinkler heads system produce crystal, the problem of thin edge.
Embodiment tetra-
Two channels spout structure as shown in Figure 4, on the basis of embodiment bis-, first channel 104 and the hollow cylinder 102 in the middle of second passage 101 are carried out to another kind improved, here hollow cylinder 102 forms by two sections, its epimere is equal diameter hollow cylinder, its hypomere is variable cross-section hollow inverted round stage cylinder, two sections of joint equal diameters; Described its cross section of hollow inverted round stage cylinder dwindles from top to down gradually, but its barrel thickness is constant; Described hollow cylinder 102 length are slightly shorter than first channel 104 outer sleeve 105 length.This structure, by optimizing 104,101 liang of channel gas uninterrupteds, makes near reactant GaCl radial distribution homogeneity optimizing treating above growth substrates, can eliminate the growth thickness thick middle of traditional sprinkler heads system produce crystal, the problem of thin edge.
Also it should be noted that, the equally distributed two channels spout structure of a kind of controllable reaction thing of the present invention, both can be applicable to vertical HVPE system, also can be applicable to inverted HVPE system.
The above embodiment has only expressed part embodiment of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as limitation of the scope of the invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with claims.
Claims (6)
1. the equally distributed two channels spout structure of controllable reaction thing, is characterized by: comprise first channel and second passage; Described second passage is positioned at the central position of first channel, and it is vapor deposition reaction thing gas that first channel passes into gas, as GaCl; It can be N that described second passage passes into gas
2also can be GaCl and N
2mixed gas.
2. two channels spout structure according to claim 1, is characterized by: described in the flow proportional of each gas of passing into can regulate arbitrarily.
3. described reactant gas according to claim 1, is characterized by: described reactant gas can be with other reactant gasess (as NH after spraying this spout
3) generation product combines.
4. two channels spout structure according to claim 1, is characterized by: described first channel is equal diameter or straightens footpath cylindrical channel.
5. two channels spout structure according to claim 1, is characterized by: described second passage can be one section of cylindrical channel, also can form by two sections, and epimere is cylindrical, and hypomere is truncated cone-shaped or reverse frustoconic, two sections of connecting place equal diameters.
6. two channels spout structure according to claim 1, is characterized by: described two channels spout structure, both can be applicable to vertical HVPE system, and also can be applicable to inverted HVPE system.
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| CN201410196612.2A CN103981512B (en) | 2014-05-10 | 2014-05-10 | A kind of controllable reaction thing equally distributed dual pathways spout structure |
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| CN201410196612.2A CN103981512B (en) | 2014-05-10 | 2014-05-10 | A kind of controllable reaction thing equally distributed dual pathways spout structure |
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| CN103981512B CN103981512B (en) | 2016-09-28 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105154969A (en) * | 2015-10-19 | 2015-12-16 | 中国电子科技集团公司第四十六研究所 | Single-crystal furnace cavity for improving uniformity of nitride grown by HVPE method |
| CN105862132A (en) * | 2016-05-30 | 2016-08-17 | 东莞市中镓半导体科技有限公司 | Method for stably growing GaN crystal material at high rate in HVPE |
| CN105986314A (en) * | 2015-02-05 | 2016-10-05 | 东莞市中镓半导体科技有限公司 | Reactor used for semiconductor single crystal material vapor phase epitaxy growth |
| CN107012505A (en) * | 2017-06-01 | 2017-08-04 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN107012502A (en) * | 2017-06-01 | 2017-08-04 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN107190311A (en) * | 2017-06-01 | 2017-09-22 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN107190312A (en) * | 2017-06-01 | 2017-09-22 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN111188027A (en) * | 2020-02-12 | 2020-05-22 | 南京大学 | Chemical vapor deposition equipment and film forming method |
| CN111420822A (en) * | 2020-04-13 | 2020-07-17 | 崔琛琛 | Material spraying assembly and environment-friendly coating spraying equipment |
| CN112993325A (en) * | 2019-12-16 | 2021-06-18 | 现代自动车株式会社 | Injector nozzle and injector comprising same |
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| CN103668446A (en) * | 2013-11-25 | 2014-03-26 | 东莞市中镓半导体科技有限公司 | Controllable precursor passage |
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| US20090241833A1 (en) * | 2008-03-28 | 2009-10-01 | Moshtagh Vahid S | Drilled cvd shower head |
| CN103014846A (en) * | 2013-01-14 | 2013-04-03 | 东莞市中镓半导体科技有限公司 | Concentric-ring sprayer structure for material vapor phase epitaxy |
| CN103668446A (en) * | 2013-11-25 | 2014-03-26 | 东莞市中镓半导体科技有限公司 | Controllable precursor passage |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105986314A (en) * | 2015-02-05 | 2016-10-05 | 东莞市中镓半导体科技有限公司 | Reactor used for semiconductor single crystal material vapor phase epitaxy growth |
| CN105986314B (en) * | 2015-02-05 | 2018-06-08 | 东莞市中镓半导体科技有限公司 | A kind of reactor for vapor phase epitaxial growth semiconductor single crystal material |
| CN105154969A (en) * | 2015-10-19 | 2015-12-16 | 中国电子科技集团公司第四十六研究所 | Single-crystal furnace cavity for improving uniformity of nitride grown by HVPE method |
| CN105862132A (en) * | 2016-05-30 | 2016-08-17 | 东莞市中镓半导体科技有限公司 | Method for stably growing GaN crystal material at high rate in HVPE |
| CN105862132B (en) * | 2016-05-30 | 2018-05-22 | 东莞市中镓半导体科技有限公司 | A kind of method for stablizing growing gan crystal material in HVPE high speeds rate |
| CN107190312A (en) * | 2017-06-01 | 2017-09-22 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN107190311A (en) * | 2017-06-01 | 2017-09-22 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN107012502A (en) * | 2017-06-01 | 2017-08-04 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN107012505A (en) * | 2017-06-01 | 2017-08-04 | 镓特半导体科技（上海）有限公司 | HVPE charge delivery mechanisms, reaction chamber and HVPE equipment |
| CN112993325A (en) * | 2019-12-16 | 2021-06-18 | 现代自动车株式会社 | Injector nozzle and injector comprising same |
| US11824235B2 (en) | 2019-12-16 | 2023-11-21 | Hyundai Motor Company | Ejector nozzle and ejector including same |
| CN111188027A (en) * | 2020-02-12 | 2020-05-22 | 南京大学 | Chemical vapor deposition equipment and film forming method |
| CN111188027B (en) * | 2020-02-12 | 2021-08-03 | 南京大学 | Chemical vapor deposition equipment and film forming method |
| CN111420822A (en) * | 2020-04-13 | 2020-07-17 | 崔琛琛 | Material spraying assembly and environment-friendly coating spraying equipment |
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|---|---|
| CN103981512B (en) | 2016-09-28 |
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