CN103981504B - Physical vapour deposition board and cooling cavities thereof - Google Patents
Physical vapour deposition board and cooling cavities thereof Download PDFInfo
- Publication number
- CN103981504B CN103981504B CN201410243215.6A CN201410243215A CN103981504B CN 103981504 B CN103981504 B CN 103981504B CN 201410243215 A CN201410243215 A CN 201410243215A CN 103981504 B CN103981504 B CN 103981504B
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- photoelectric sensor
- lifting ring
- sensor
- raised position
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention provides a kind of physical vapour deposition board and cooling cavities thereof, this cooling cavities comprises cavity lid, photoelectric sensor, lifting ring and cooling base; Photoelectric sensor is installed on cavity lid; Lifting ring by lifting arm downwards and cylinders connect, cylinder has raised position sensor and off-position sensor, for judging that lifting ring is in raised position or off-position; Lifting ring carries silicon chip, and photoelectric sensor aims at silicon chip downwards; Cooling base is positioned at the below of silicon chip.Wherein, photoelectric sensor launches infrared light beam to silicon chip, and when running into silicon chip, infrared light beam is reflected back; When silicon chip is properly placed on lifting ring, the infrared light beam reflected can be received by photoelectric sensor, photoelectric sensor conducting, and lifting ring allows to carry silicon chip and drops to off-position from raised position; Otherwise photoelectric sensor not conducting, board is out of service.Whether the present invention can detect the position of silicon chip in cooling cavities on lifting ring automatically correct.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, specifically, the present invention relates to board and cooling cavities thereof that one carries out al-cu films physical vapor deposition (PVD) technique.
Background technology
PVD (physicalvapordeposition) i.e. physical vapour deposition, AMATEndura5500 board is that a kind of full-automatic, monolithic carries out the integrated PVD technique board of technique, multiple cavity.
Produce good al-cu films very high to the temperature requirement of PVD process environments, need to stablize silicon chip, heat uniformly.To this, the counte-rplan of Endura5500 board integratedly in substrate pedestal add well heater, and in substrate pedestal, add a road argon gas pipeline.When silicon chip be placed on substrate pedestal carries out technique time, make argon gas be injected in the back side of silicon chip.Like this, at the well heater of substrate pedestal while heating silicon chip, the argon gas with heat also heats silicon chip.The program had both improve the heating efficiency of well heater, also improved the homogeneity to silicon chip heating.
But, when argon gas sprays at silicon chip back side time, position of silicon wafer can be made to be blown skew by argon gas.In order to address this problem, what Endura5500 board adopted is on silicon chip, add a clamp ring (clampring), and namely clamp ring is pressed in silicon chip and substrate pedestal avoids silicon chip is blown skew by argon gas.Under normal circumstances, the contact surface of clamp ring and silicon chip should be have no tightly contacting of gap, and the al-cu films grown out like this would not be grown on the contact surface of clamp ring and silicon chip.But, because clamp ring needs regularly to clean, in the process of cleaning, the contact surface of clamp ring and silicon chip may be made not to be a horizontal plane, to make the al-cu films length grown out like this on contact surface.When there is this situation, the grown al-cu films out of silicon chip can be made to be bonded on clamp ring.When after technique completes, silicon chip transmits time, silicon chip may just in time fall on the arm transmitting silicon chip, and the position of silicon chip on transmission arm can be made like this to depart from correct position.When such silicon chip is sent to cooling chamber, silicon chip has side correctly not ride on lifting ring (lifthoop), when lifting ring is raised to raised position (liftposition), silicon chip tilts, and some can slide into below lifting ring.When lifting ring drops to off-position (releaseposition), silicon chip can be crushed.The generation of this situation, can make the production time of board be subject to serious impact, and scrapping of broken silicon chip also result in huge property damage.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of board and the cooling cavities thereof that can carry out al-cu films physical gas-phase deposition, and after automatically can detecting deposit, whether the position of silicon chip in cooling cavities on lifting ring be correct.
For solving the problems of the technologies described above, the invention provides a kind of cooling cavities of physical vapour deposition board, comprising cavity lid, photoelectric sensor, lifting ring and cooling base; Described photoelectric sensor is installed on described cavity lid; Described lifting ring is connect with a cylinders downwards by a lifting arm, and described cylinder has raised position sensor and off-position sensor, for judging that described lifting ring is in raised position or off-position; Described lifting ring carries a silicon chip, described photoelectric sensor aims at described silicon chip downwards; Described cooling base is positioned at the below of described silicon chip;
Wherein, described photoelectric sensor is used for launching a branch of infrared light beam to the described silicon chip below it, and when running into described silicon chip, described infrared light beam is reflected back; When described silicon chip is properly placed on described lifting ring, the described infrared light beam reflected can be received by described photoelectric sensor, described photoelectric sensor conducting, described lifting ring allows to carry described silicon chip and drops to described off-position from described raised position; Otherwise the not conducting of described photoelectric sensor, described board is out of service.
Alternatively, described photoelectric sensor is applied with the operating voltage of one 24 volts.
Alternatively, one end of described raised position sensor is connected with the operating voltage of one 24 volts after connecting with described photoelectric sensor, the other end ground connection of described raised position sensor.
Alternatively, one end of described off-position sensor is directly connected with the operating voltage of one 24 volts, the other end ground connection.
Alternatively, described photoelectric sensor is installed on edge on described cavity lid or center.
For solving the problems of the technologies described above, the present invention also provides a kind of physical vapour deposition board, has cooling cavities, and described cooling cavities comprises cavity lid, photoelectric sensor, lifting ring and cooling base; Described photoelectric sensor is installed on described cavity lid; Described lifting ring is connect with a cylinders downwards by a lifting arm, and described cylinder has raised position sensor and off-position sensor, for judging that described lifting ring is in raised position or off-position; Described lifting ring carries a silicon chip, described photoelectric sensor aims at described silicon chip downwards; Described cooling base is positioned at the below of described silicon chip;
Wherein, described photoelectric sensor is used for launching a branch of infrared light beam to the described silicon chip below it, and when running into described silicon chip, described infrared light beam is reflected back; When described silicon chip is properly placed on described lifting ring, the described infrared light beam reflected can be received by described photoelectric sensor, described photoelectric sensor conducting, described lifting ring allows to carry described silicon chip and drops to described off-position from described raised position; Otherwise the not conducting of described photoelectric sensor, described board is out of service.
Alternatively, described photoelectric sensor is applied with the operating voltage of one 24 volts.
Alternatively, one end of described raised position sensor is connected with the operating voltage of one 24 volts after connecting with described photoelectric sensor, the other end ground connection of described raised position sensor.
Alternatively, one end of described off-position sensor is directly connected with the operating voltage of one 24 volts, the other end ground connection.
Alternatively, described photoelectric sensor is installed on edge on described cavity lid or center.
Compared with prior art, the present invention has the following advantages:
The present invention automatically can detect physical vapour deposition after the position of silicon chip in cooling cavities on lifting ring whether correct.When after the malposition (skew) finding silicon chip, to the signal of a board stop process, avoid lifting ring and continue to move downward and cause silicon chip to be caught broken.
The present invention reduces the off-time of board, and avoid the generation of the fragment that the problem due to silicon chip bonding die causes, save a large amount of production costs every year.
Accompanying drawing explanation
The above and other features of the present invention, character and advantage become more obvious by passing through below in conjunction with the description of drawings and Examples, wherein:
Fig. 1 is the control texture schematic diagram having installed the cooling cavities of the physical vapour deposition board of photoelectric sensor of one embodiment of the invention;
Fig. 2 is the principle schematic of the photoelectric sensor conducting when silicon chip is properly placed on lifting ring in the cooling cavities of the physical vapour deposition board of one embodiment of the invention;
Fig. 3 is the principle schematic of the photoelectric sensor not conducting when silicon chip is not properly placed on lifting ring in the cooling cavities of the physical vapour deposition board of another embodiment of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, the invention will be further described; set forth more details in the following description so that fully understand the present invention; but the present invention obviously can implement with multiple this alternate manner described that is different from; those skilled in the art can when doing similar popularization, deduction without prejudice to when intension of the present invention according to practical situations, therefore should with content constraints protection scope of the present invention of this specific embodiment.
The embodiment of the cooling cavities of physical vapour deposition board
Fig. 1 is the control texture schematic diagram having installed the cooling cavities of the physical vapour deposition board of photoelectric sensor of one embodiment of the invention.It should be noted that this and follow-up other accompanying drawing all only exemplarily, it is not draw according to the condition of equal proportion, and should not be construed as limiting in this, as to the protection domain of actual requirement of the present invention.As shown in Figure 1, this cooling cavities 100 mainly comprises cavity lid 101, photoelectric sensor 102 (as BANNERSM312CV2), lifting ring 103 and cooling base 104.Photoelectric sensor 102 is installed on cavity lid 101, specifically can be installed on the edge on cavity lid 101, also can be installed on the center on cavity lid 101.Lifting ring 103 is connected with a cylinder 106 downwards by a lifting arm 105, cylinder has raised position sensor 107 and off-position sensor 108, for judging that lifting ring 103 is in raised position (liftposition) or off-position (releaseposition).Lifting ring 103 carries a silicon chip (not shown), photoelectric sensor 102 aims at this silicon chip downwards.Cooling base 104 is positioned at the below of silicon chip.
Wherein, photoelectric sensor 102 is applied with the operating voltage of one 24 volts, launches a branch of infrared light beam for the silicon chip below it, when running into silicon chip, infrared light beam is reflected back.When silicon chip is properly placed on lifting ring 103, the infrared light beam reflected can be received by photoelectric sensor 102, photoelectric sensor 102 conducting, and lifting ring 103 allows to carry silicon chip and drops to off-position from raised position; Otherwise photoelectric sensor 102 not conducting, board is out of service.
As shown in Figure 1, one end of raised position sensor 107 is connected with the operating voltage of one 24 volts after connecting with photoelectric sensor 102, the other end ground connection (com) of raised position sensor 107.And one end of off-position sensor 108 is directly connected with the operating voltage of one 24 volts, the other end ground connection (com).
How to avoid crushing for a more detailed description transmitting the be cooled lifting ring of cavity of silicon chip that arm upper offset moves to the present invention below.The present invention has installed photoelectric sensor 102 (BANNERSM312CV2) on a transparent cover (i.e. cavity lid 101) of cooling cavities 100, and the train of signal of photoelectric sensor 102 is linked on the signal of raised position sensor 107 of lifting ring 103.The principle of work of photoelectric sensor 102 is: photoelectric sensor 102 launches a branch of infrared light beam, meet with obstruction thing time infrared light beam be reflected back, when photoelectric sensor 102 receives the infrared light beam reflected, photoelectric sensor 102 conducting, otherwise not conducting.
Fig. 2 is the principle schematic of the photoelectric sensor conducting when silicon chip is properly placed on lifting ring in the cooling cavities of the physical vapour deposition board of one embodiment of the invention; Fig. 3 is the principle schematic of the photoelectric sensor not conducting when silicon chip is not properly placed on lifting ring in the cooling cavities of the physical vapour deposition board of another embodiment of the present invention.First as shown in Figure 2, if silicon chip 109 is transmitting the correct position of arm (not shown), then silicon chip 109 is sent on the lifting ring 103 of cooling cavities 100, when lifting ring 103 rises to raised position, the position of silicon chip 109 is level (correct positions), vertical between silicon chip 109 and the light path of photoelectric sensor 102, the infrared light beam that photoelectric sensor 102 sends by the receiving trap on silicon chip 109 reflected light electric inductor 102, photoelectric sensor 102 conducting.Again as shown in Figure 3, if silicon chip 109 is transmitting the malposition of arm, then silicon chip 109 is when the lifting ring 103 of cooling cavities 100 rises to raised position, the position of silicon chip 109 is (incorrect positions) of tilting, offseting, off plumb between the light path of silicon chip 109 and photoelectric sensor 102, receiving trap on photoelectric sensor 102 can not receive the infrared light beam reflected by silicon chip 109, photoelectric sensor 102 not conducting.When photoelectric sensor 102 not conducting, raised position sensor 107 loop of the cylinder 106 of lifting ring 103 can not be formed, and the technique of board stops and sending alarm message.
Please come back to shown in Fig. 1, following refinement be remake to the working process of lifting ring 103 and describes:
The lifting ring 103 of cooling cavities 100 mainly contains upper and lower two positions, i.e. raised position (liftposition) and off-position (releaseposition), the upper and lower action cylinder 106 of lifting ring 103 drives through lifting arm 105.Board judges that the position of lifting ring 103 is that two position transducers (i.e. raised position sensor 107 and off-position sensor 108) be mounted on cylinder 106 judge.When cylinder 106 runs to raised position, then raised position sensor 107 conducting on this raised position; If when cylinder 106 runs to off-position, then off-position sensor 108 conducting on this off-position.
After on signal circuit photoelectric sensor 102 being connected in series to the raised position sensor 107 of lifting ring 103, when the malposition of silicon chip, photoelectric sensor 102 can not conducting, then the raised position sensor 107 also not conducting of lifting ring 103.At this moment board can be reported to the police, and system indication example is as " cavity can not reach raised position (CHBcannotreachliftposition) ", and board can be out of service this moment, avoids lifting ring 103 automatically to drop to the action of off-position.Like this, silicon chip would not be caught broken.
The embodiment of physical vapour deposition board
The present embodiment continues to use the accompanying drawing of previous embodiment, element numbers and partial content, wherein adopts identical label to represent identical or approximate element.The physical vapour deposition board of the present embodiment has cooling cavities, and wherein Fig. 1 is the control texture schematic diagram having installed the cooling cavities of the physical vapour deposition board of photoelectric sensor of one embodiment of the invention.It should be noted that this and follow-up other accompanying drawing all only exemplarily, it is not draw according to the condition of equal proportion, and should not be construed as limiting in this, as to the protection domain of actual requirement of the present invention.As shown in Figure 1, this cooling cavities 100 mainly comprises cavity lid 101, photoelectric sensor 102 (as BANNERSM312CV2), lifting ring 103 and cooling base 104.Photoelectric sensor 102 is installed on cavity lid 101, specifically can be installed on the edge on cavity lid 101, also can be installed on the center on cavity lid 101.Lifting ring 103 is connected with a cylinder 106 downwards by a lifting arm 105, cylinder has raised position sensor 107 and off-position sensor 108, for judging that lifting ring 103 is in raised position (liftposition) or off-position (releaseposition).Lifting ring 103 carries a silicon chip (not shown), photoelectric sensor 102 aims at this silicon chip downwards.Cooling base 104 is positioned at the below of silicon chip.
Wherein, photoelectric sensor 102 is applied with the operating voltage of one 24 volts, launches a branch of infrared light beam for the silicon chip below it, when running into silicon chip, infrared light beam is reflected back.When silicon chip is properly placed on lifting ring 103, the infrared light beam reflected can be received by photoelectric sensor 102, photoelectric sensor 102 conducting, and lifting ring 103 allows to carry silicon chip and drops to off-position from raised position; Otherwise photoelectric sensor 102 not conducting, board is out of service.
As shown in Figure 1, one end of raised position sensor 107 is connected with the operating voltage of one 24 volts after connecting with photoelectric sensor 102, the other end ground connection (com) of raised position sensor 107.And one end of off-position sensor 108 is directly connected with the operating voltage of one 24 volts, the other end ground connection (com).
How to avoid crushing for a more detailed description transmitting the be cooled lifting ring of cavity of silicon chip that arm upper offset moves to the present invention below.The present invention has installed photoelectric sensor 102 (BANNERSM312CV2) on a transparent cover (i.e. cavity lid 101) of cooling cavities 100, and the train of signal of photoelectric sensor 102 is linked on the signal of raised position sensor 107 of lifting ring 103.The principle of work of photoelectric sensor 102 is: photoelectric sensor 102 launches a branch of infrared light beam, meet with obstruction thing time infrared light beam be reflected back, when photoelectric sensor 102 receives the infrared light beam reflected, photoelectric sensor 102 conducting, otherwise not conducting.
Fig. 2 is the principle schematic of the photoelectric sensor conducting when silicon chip is properly placed on lifting ring in the cooling cavities of the physical vapour deposition board of one embodiment of the invention; Fig. 3 is the principle schematic of the photoelectric sensor not conducting when silicon chip is not properly placed on lifting ring in the cooling cavities of the physical vapour deposition board of another embodiment of the present invention.First as shown in Figure 2, if silicon chip 109 is transmitting the correct position of arm (not shown), then silicon chip 109 is sent on the lifting ring 103 of cooling cavities 100, when lifting ring 103 rises to raised position, the position of silicon chip 109 is level (correct positions), vertical between silicon chip 109 and the light path of photoelectric sensor 102, the infrared light beam that photoelectric sensor 102 sends by the receiving trap on silicon chip 109 reflected light electric inductor 102, photoelectric sensor 102 conducting.Again as shown in Figure 3, if silicon chip 109 is transmitting the malposition of arm, then silicon chip 109 is when the lifting ring 103 of cooling cavities 100 rises to raised position, the position of silicon chip 109 is (incorrect positions) of tilting, offseting, off plumb between the light path of silicon chip 109 and photoelectric sensor 102, receiving trap on photoelectric sensor 102 can not receive the infrared light beam reflected by silicon chip 109, photoelectric sensor 102 not conducting.When photoelectric sensor 102 not conducting, raised position sensor 107 loop of the cylinder 106 of lifting ring 103 can not be formed, and the technique of board stops and sending alarm message.
Please come back to shown in Fig. 1, following refinement be remake to the working process of lifting ring 103 and describes:
The lifting ring 103 of cooling cavities 100 mainly contains upper and lower two positions, i.e. raised position (liftposition) and off-position (releaseposition), the upper and lower action cylinder 106 of lifting ring 103 drives through lifting arm 105.Board judges that the position of lifting ring 103 is that two position transducers (i.e. raised position sensor 107 and off-position sensor 108) be mounted on cylinder 106 judge.When cylinder 106 runs to raised position, then raised position sensor 107 conducting on this raised position; If when cylinder 106 runs to off-position, then off-position sensor 108 conducting on this off-position.
After on signal circuit photoelectric sensor 102 being connected in series to the raised position sensor 107 of lifting ring 103, when the malposition of silicon chip, photoelectric sensor 102 can not conducting, then the raised position sensor 107 also not conducting of lifting ring 103.At this moment board can be reported to the police, and system indication example is as " cavity can not reach raised position (CHBcannotreachliftposition) ", and board can be out of service this moment, avoids lifting ring 103 automatically to drop to the action of off-position.Like this, silicon chip would not be caught broken.
In sum, the present invention automatically can detect physical vapour deposition after the position of silicon chip in cooling cavities on lifting ring whether correct.When after the malposition (skew) finding silicon chip, to the signal of a board stop process, avoid lifting ring and continue to move downward and cause silicon chip to be caught broken.
The present invention reduces the off-time of board, and avoid the generation of the fragment that the problem due to silicon chip bonding die causes, save a large amount of production costs every year.
Although the present invention with preferred embodiment openly as above, it is not that any those skilled in the art without departing from the spirit and scope of the present invention, can make possible variation and amendment for limiting the present invention.Therefore, every content not departing from technical solution of the present invention, any amendment done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all fall within protection domain that the claims in the present invention define.
Claims (4)
1. a cooling cavities for physical vapour deposition board, comprises cavity lid, photoelectric sensor, lifting ring and cooling base; Described photoelectric sensor is installed on described cavity lid; Described lifting ring is connect with a cylinders downwards by a lifting arm, and described cylinder has raised position sensor and off-position sensor, for judging that described lifting ring is in raised position or off-position; Described lifting ring carries a silicon chip, described photoelectric sensor aims at described silicon chip downwards; Described cooling base is positioned at the below of described silicon chip;
Wherein, described photoelectric sensor is used for launching a branch of infrared light beam to the described silicon chip below it, and when running into described silicon chip, described infrared light beam is reflected back; When described silicon chip is properly placed on described lifting ring, the described infrared light beam reflected can be received by described photoelectric sensor, described photoelectric sensor conducting, described lifting ring allows to carry described silicon chip and drops to described off-position from described raised position; Otherwise, the not conducting of described photoelectric sensor, described board is out of service;
Wherein, described photoelectric sensor is applied with the operating voltage of one 24 volts;
Wherein, one end of described raised position sensor is connected with the operating voltage of described 24 volts after connecting with described photoelectric sensor, the other end ground connection of described raised position sensor;
One end of described off-position sensor is directly connected with the operating voltage of described 24 volts, the other end ground connection.
2. cooling cavities according to claim 1, is characterized in that, described photoelectric sensor is installed on edge on described cavity lid or center.
3. a physical vapour deposition board, has cooling cavities, and described cooling cavities comprises cavity lid, photoelectric sensor, lifting ring and cooling base; Described photoelectric sensor is installed on described cavity lid; Described lifting ring is connect with a cylinders downwards by a lifting arm, and described cylinder has raised position sensor and off-position sensor, for judging that described lifting ring is in raised position or off-position; Described lifting ring carries a silicon chip, described photoelectric sensor aims at described silicon chip downwards; Described cooling base is positioned at the below of described silicon chip;
Wherein, described photoelectric sensor is used for launching a branch of infrared light beam to the described silicon chip below it, and when running into described silicon chip, described infrared light beam is reflected back; When described silicon chip is properly placed on described lifting ring, the described infrared light beam reflected can be received by described photoelectric sensor, described photoelectric sensor conducting, described lifting ring allows to carry described silicon chip and drops to described off-position from described raised position; Otherwise, the not conducting of described photoelectric sensor, described board is out of service;
Wherein, described photoelectric sensor is applied with the operating voltage of one 24 volts;
Wherein, one end of described raised position sensor is connected with the operating voltage of described 24 volts after connecting with described photoelectric sensor, the other end ground connection of described raised position sensor;
One end of described off-position sensor is directly connected with the operating voltage of described 24 volts, the other end ground connection.
4. physical vapour deposition board according to claim 3, is characterized in that, described photoelectric sensor is installed on edge on described cavity lid or center.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410243215.6A CN103981504B (en) | 2014-06-03 | 2014-06-03 | Physical vapour deposition board and cooling cavities thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410243215.6A CN103981504B (en) | 2014-06-03 | 2014-06-03 | Physical vapour deposition board and cooling cavities thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103981504A CN103981504A (en) | 2014-08-13 |
CN103981504B true CN103981504B (en) | 2016-04-13 |
Family
ID=51273671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410243215.6A Active CN103981504B (en) | 2014-06-03 | 2014-06-03 | Physical vapour deposition board and cooling cavities thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103981504B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106702342B (en) * | 2015-11-17 | 2019-01-29 | 宁波江丰电子材料股份有限公司 | Compression ring for target as sputter technique |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101477961A (en) * | 2008-01-03 | 2009-07-08 | 京元电子股份有限公司 | Wafer raising platform and wafer test machine |
WO2010026772A1 (en) * | 2008-09-04 | 2010-03-11 | キヤノンアネルバ株式会社 | Substrate cooling method and semiconductor manufacturing method |
JP2010153769A (en) * | 2008-11-19 | 2010-07-08 | Tokyo Electron Ltd | Substrate position sensing device, substrate position sensing method, film forming device, film forming method, program, and computer readable storage medium |
CN201942746U (en) * | 2011-01-06 | 2011-08-24 | 上海华虹Nec电子有限公司 | Device for monitoring position of silicon wafer for sputtering machine platform |
CN102586737A (en) * | 2012-03-09 | 2012-07-18 | 上海先进半导体制造股份有限公司 | Physical vapor deposition method of aluminum-copper film |
TWM449349U (en) * | 2012-11-02 | 2013-03-21 | Marketech Int Corp | Wafer cooling positioning machine |
-
2014
- 2014-06-03 CN CN201410243215.6A patent/CN103981504B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103981504A (en) | 2014-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103981504B (en) | Physical vapour deposition board and cooling cavities thereof | |
US20190324080A1 (en) | Apparatus Equipped with Crack Detection Circuit and Detection System | |
EP3342491A1 (en) | Detection device and workpiece cleaning apparatus comprising same | |
US20130206070A1 (en) | Deposition ring | |
CN109811323A (en) | A kind of magnetic control sputtering device and pallet detection method | |
CN111201593A (en) | LED detection device and method | |
CN103779252B (en) | A kind of online detection architecture for wafer level bonding particle contamination | |
CN106391564A (en) | Protection method for transducers of ultrasonic cleaning machine | |
CN102339779B (en) | The transfer system of wafer cassette and method | |
CN203877427U (en) | Product displacement detection apparatus for automatic production line | |
CN102632023B (en) | Dispensing process for LED (light-emitting diode) encapsulation | |
CN201942746U (en) | Device for monitoring position of silicon wafer for sputtering machine platform | |
CN201078752Y (en) | Apparatus for detecting glass panel | |
US9065030B2 (en) | Diode package having improved lead wire and manufacturing method thereof | |
CN204738952U (en) | Reation kettle automatic protection device of pump of unloading | |
CN204577403U (en) | A kind of bonding chip tool | |
CN106510043A (en) | Electric indicating protection device and method and high-pressure protection garment with device | |
CN204439112U (en) | A kind of calibration detects tool | |
CN208847848U (en) | Pipe detection device | |
CN105514098A (en) | Optical chip integrated structure | |
CN101024446B (en) | Non-contacting type edge-detecting device and using method | |
CN103871926A (en) | Device and operating method for preventing silicon wafer from offset and cracking in cavity transporting process | |
CN109488891A (en) | Lamp module | |
CN204215527U (en) | A kind of breaking alarm device of belt lace | |
CN108592804A (en) | A kind of Film Thickness Detection System based on laser reflection |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |