CN103979542A - Method for preparing SiCO micron-ceramic crosses - Google Patents
Method for preparing SiCO micron-ceramic crosses Download PDFInfo
- Publication number
- CN103979542A CN103979542A CN201410230686.3A CN201410230686A CN103979542A CN 103979542 A CN103979542 A CN 103979542A CN 201410230686 A CN201410230686 A CN 201410230686A CN 103979542 A CN103979542 A CN 103979542A
- Authority
- CN
- China
- Prior art keywords
- cross bar
- preparation
- sico
- micrometer ceramics
- stirring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Products (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a method for preparing SiCO micron-ceramic crosses and relates to micron ceramics. The method comprises the following steps: dissolving 0.8g of template agent F127 into 5ml of xylene solution, and stirring so as to obtain mixed liquid A; dissolving 0.8g of ceramic precursor, polyvinyl silazane, into 5ml of isopropanol, adding a thermal cross-linking agent, dicumyl peroxide, and stirring so as to obtain mixed liquid B; mixing the mixed liquid A and the mixed liquid B, and stirring so as to obtain mixed liquid C; and pouring the mixed liquid C on a polytetrafluoroethylene tray, carrying out heat preservation in a baking oven at the temperature of 50 DEG C, then, cross-linking at the temperature of 130 DEG C so as to form a yellowish transparent film, taking out, stripping, and then, pyrolyzing the film in an inert atmosphere, thereby obtaining the SiCO micron-ceramic crosses on the surface of the film. The prepared SiCO micron-ceramic crosses have the edge length of 1-4 microns, are good in stability and have an important application value in the fields of composite materials, high-temperature device design and the like; the method has the advantages that the equipment investment is small, the operation is easy, the process is simple, and the repeatability is good.
Description
Technical field
The present invention relates to a kind of micrometer ceramics, especially relate to a kind of preparation method of SiCO micrometer ceramics cross bar.
Background technology
The preparation of micro-nano structure is difficult point and the focus in current application field.The self-assembling technique of segmented copolymer, as a kind of very potential ordered structure assemble method from bottom to top, has become one of focus of fabrication technical field over nearly 20 years.Segmented copolymer is connected and is formed by chemical bond by mutual exclusive segment on thermodynamics, and this constructional feature causes segmented copolymer that micron-scale phase separation can only occur, and forms colourful ordered phase form on meso-scale.These microcosmic ordered phase forms have good Modulatory character and relatively easy preparation method, by change segmented copolymer composition, chain length, apply outfield or change preparation method etc. and can make segmented copolymer produce the microscopic pattern of various high-sequentials by self-assembly.
Segmented copolymer has been studied widely and has been paid attention in organic polymer and electrochemical field etc., and Chinese patent CN101914191A discloses a kind of preparation method of polyoxometallate-polymer hybridized segmented copolymer nanotube.Chinese patent CN101244818 is open a kind of taking polyurethane sponge as skeleton support body, taking nonionic surface active agent as structure directing agent, taking polymer presoma as carbon source, taking inorganic silicon source etc. as additive, through high temperature hot polymerization and carbonization, preparation has in order mesoporous polymer, carbon material and the matrix material of mesopore orbit, high-specific surface area, macropore volume continuously.Chinese patent CN101059472 discloses the method for assembling block copolymer for preparing gold nano array electrode in a kind of water, by the poly-four vinyl pyridines-polystyrene block copolymer of assembling in water, utilize the electrostatic interaction between cationic micelle and electronegative golden nanometer particle to prepare gold-nano array electrode.This making method is fast and convenient, does not introduce organic solvent, and electrode surface can upgrade to be reused, and has reduced cost.Although the self-assembling technique of segmented copolymer is as the very potential ordered structure assemble method of one, but be applied in inorganic aspect or a newer field.It is simple that Chinese patent CN103073297A discloses a kind of preparation process, can prepare efficiently the method for SiCO nanometer ball.And the preparation of SiCO micrometer ceramics cross bar have not been reported.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of SiCO micrometer ceramics cross bar.
The present invention includes following steps:
1) by 0.8g template F127 (PEO
106-PPO
70-PEO
106) be dissolved in 5ml xylene solution, after stirring, obtain mixed liquor A;
2) the ceramic precursor Polyvinylsilazane of 0.8g is dissolved in 5ml Virahol, adds thermal cross-linking agent dicumyl peroxide, after stirring, obtain mixed liquid B;
3) mixed liquor A and mixed liquid B are mixed, after stirring, mixed solution C;
4) mixed solution C is poured in polytetrafluoroethyldisk disk, in the baking oven of 50 DEG C, is incubated, then 130 DEG C crosslinked after, become faint yellow transparent film, take out rear demoulding, then pyrolysis film in inert atmosphere, obtains SiCO micrometer ceramics cross bar at film surface.
In step 1) in, the time of described stirring can be 2～4h.
In step 2) in, the consumption of described thermal cross-linking agent can be 4% of Polyvinylsilazane quality by mass percentage; Described adding after thermal cross-linking agent dicumyl peroxide, preferably seal lucifuge; Described stirring can adopt magnetic agitation 2～4h.
In step 3) in, preferably sealing after described mixing; The time of described stirring can be 18～36h.
In step 4) in, the time of insulation can be 36～96h; The described crosslinked time can be 30～50min; The program of described pyrolysis can be: rise to 130 DEG C of insulation 2h with 1 DEG C/min, rise to 300 DEG C of insulation 1h with 0.5 DEG C/min, rise to 400 DEG C of insulation 4h with 0.5 DEG C/min, rise to 500 DEG C and be incubated 4h with 0.5 DEG C/min, finally naturally cool to room temperature.
The present invention is first by template F127 (EO
106-PO
70-EO
106), ceramic forerunner Polyvinylsilazane and thermal cross-linking agent dicumyl peroxide be dissolved in the mixing solutions of dimethylbenzene and Virahol, obtain the mixing solutions of homogeneous transparent, obtain SiCO micrometer ceramics cross bar by the common assembling of Polyvinylsilazane and the agent of structure wire, carry out subsequently solvent evaporation, crosslinked, the demoulding, high temperature sintering and obtain SiCO micrometer ceramics cross bar, rib length is between 1～4 μ m.
The method of the SiCO of preparation micrometer ceramics cross bar provided by the invention has the following advantages:
1) the rib length of the SiCO micrometer ceramics cross bar that prepared by the present invention is between 1～4 μ m, and good stability.
2) the SiCO micrometer ceramics cross bar that prepared by the present invention has important using value in fields such as matrix material and high-temperature device designs.
3) the present invention adopts Polyvinylsilazane and template F127 (PEO
106-PPO
70-PEO
106) the method for common assembling prepare SiCO micrometer ceramics cross bar, its great advantage is that facility investment is few, processing ease, technical process is simpler, reproducible.
Brief description of the drawings
Fig. 1 be the prepared SiCO micrometer ceramics cross bar of the embodiment of the present invention 1 SEM photo (scale be 1 μ m).
Fig. 2 be the prepared SiCO micrometer ceramics cross bar of the embodiment of the present invention 1 SEM photo (scale be 2 μ m).
Embodiment
Below by embodiment, the present invention will be further described by reference to the accompanying drawings.
Embodiment 1
By ethanol cleaning ultrasonic for polytetrafluoroethyldisk disk, put into subsequently baking oven dry for standby.The F127 that takes 0.8g is dissolved in the container of dimethylbenzene of 5ml and sealing, stirs 3h and obtains mixed liquor A.In another container, add the Polyvinylsilazane of 0.8g and the dicumyl peroxide of 0.032g, be dissolved in 5ml Virahol, and sealing rapidly, magnetic agitation 3h, obtains mixed liquid B.Subsequently the solution in two containers is mixed and sealing rapidly, container is avoided irradiate light, continues churning time 24h, obtains mixed solution C.Mixed solution C is poured in the polytetrafluoroethyldisk disk of 50 DEG C of insulations and be incubated 48h, after solvent evaporation, obtain transparent film.Film is put into the baking oven heat cross-linking 40min of 130 DEG C, film becomes faint yellow from water white transparency, takes out demoulding.After demoulding, film is placed on graphite paper.Subsequently, put into the tube furnace sintering of protection of inert gas.
Following program is set: temperature program(me) is, rise to 130 DEG C and be incubated 2h from room temperature with the temperature rise rate of 1 DEG C/min, rise to 300 DEG C and be incubated 1h with the temperature rise rate of 0.5 DEG C/min, rise to 400 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C, rise to 500 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C/min, finally naturally cool to room temperature.Take out graphite paper, obtain the film sample of black, obtain SiCO micrometer ceramics cross bar on its surface.As shown in Fig. 1,2 SEM figure, can clear view to SiCO micrometer ceramics cross bar.
Embodiment 2:
By ethanol cleaning ultrasonic for polytetrafluoroethyldisk disk, put into subsequently baking oven dry for standby.The F127 that takes 0.8g is dissolved in the container of dimethylbenzene of 5ml and sealing, stirs 2h and obtains mixed liquor A.In another container, add the Polyvinylsilazane of 0.8g and the dicumyl peroxide of 0.032g, be dissolved in 5ml Virahol, and sealing rapidly, magnetic agitation 2h, obtains mixed liquid B.Subsequently the solution in two containers is mixed and sealing rapidly, container is avoided irradiate light, continues churning time 18h, obtains mixed solution C.Mixed solution C is poured in the polytetrafluoroethyldisk disk of 50 DEG C of insulations and be incubated 36h, after solvent evaporation, obtain transparent film.Film is put into the baking oven heat cross-linking 40min of 130 DEG C, film becomes faint yellow from water white transparency, takes out demoulding.After demoulding, film is placed on graphite paper.Subsequently, put into the tube furnace sintering of protection of inert gas.
Following program is set: temperature program(me) is, rise to 130 DEG C and be incubated 2h from room temperature with the temperature rise rate of 1 DEG C/min, rise to 300 DEG C and be incubated 1h with the temperature rise rate of 0.5 DEG C/min, rise to 400 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C, rise to 500 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C/min, finally naturally cool to room temperature.Take out graphite paper, obtain the film sample of black, obtain SiCO micrometer ceramics cross bar on its surface.
Embodiment 3:
By ethanol cleaning ultrasonic for polytetrafluoroethyldisk disk, put into subsequently baking oven dry for standby.The F127 that takes 0.8g is dissolved in the container of dimethylbenzene of 5ml and sealing, stirs 4h and obtains mixed liquor A.In another container, add the Polyvinylsilazane of 0.8g and the dicumyl peroxide of 0.032g, be dissolved in 5ml Virahol, and sealing rapidly, magnetic agitation 4h, obtains mixed liquid B.Subsequently the solution in two containers is mixed and sealing rapidly, container is avoided irradiate light, continues churning time 24h, obtains mixed solution C.Mixed solution C is poured in the polytetrafluoroethyldisk disk of 50 DEG C of insulations and be incubated 60h, after solvent evaporation, obtain transparent film.Film is put into the baking oven heat cross-linking 40min of 130 DEG C, film becomes faint yellow from water white transparency, takes out demoulding.After demoulding, film is placed on graphite paper.Subsequently, put into the tube furnace sintering of protection of inert gas.
Following program is set: temperature program(me) is, rise to 130 DEG C and be incubated 2h from room temperature with the temperature rise rate of 1 DEG C/min, rise to 300 DEG C and be incubated 1h with the temperature rise rate of 0.5 DEG C/min, rise to 400 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C, rise to 500 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C/min, finally naturally cool to room temperature.Take out graphite paper, obtain the film sample of black, obtain SiCO micrometer ceramics cross bar on its surface.
Embodiment 4:
By ethanol cleaning ultrasonic for polytetrafluoroethyldisk disk, put into subsequently baking oven dry for standby.The F127 that takes 0.8g is dissolved in the container of dimethylbenzene of 5ml and sealing, stirs 2h and obtains mixed liquor A.In another container, add the Polyvinylsilazane of 0.8g and the dicumyl peroxide of 0.032g, be dissolved in 5ml Virahol, and sealing rapidly, magnetic agitation 2h, obtains mixed liquid B.Subsequently the solution in two containers is mixed and sealing rapidly, container is avoided irradiate light, continues churning time 36h, obtains mixed solution C.Mixed solution C is poured in the polytetrafluoroethyldisk disk of 50 DEG C of insulations and be incubated 96h, after solvent evaporation, obtain transparent film.Film is put into the baking oven heat cross-linking 40min of 130 DEG C, film becomes faint yellow from water white transparency, takes out demoulding.After demoulding, film is placed on graphite paper.Subsequently, put into the tube furnace sintering of protection of inert gas.
Following program is set: temperature program(me) is, rise to 130 DEG C and be incubated 2h from room temperature with the temperature rise rate of 1 DEG C/min, rise to 300 DEG C and be incubated 1h with the temperature rise rate of 0.5 DEG C/min, rise to 400 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C, rise to 500 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C/min, finally naturally cool to room temperature.Take out graphite paper, obtain the film sample of black, obtain hollow nanometer cross bar on its surface.
Embodiment 5:
By ethanol cleaning ultrasonic for polytetrafluoroethyldisk disk, put into subsequently baking oven dry for standby.The F127 that takes 0.8g is dissolved in the container of dimethylbenzene of 5ml and sealing, stirs 3h and obtains mixed liquor A.In another container, add the Polyvinylsilazane of 0.8g and the dicumyl peroxide of 0.04g, be dissolved in 5ml Virahol, and sealing rapidly, magnetic agitation 3h, obtains mixed liquid B.Subsequently the solution in two containers is mixed and sealing rapidly, container is avoided irradiate light, continues churning time 30h, obtains mixed solution C.Mixed solution C is poured in the polytetrafluoroethyldisk disk of 50 DEG C of insulations and be incubated 72h, after solvent evaporation, obtain transparent film.Film is put into the baking oven heat cross-linking 30min of 130 DEG C, film becomes faint yellow from water white transparency, takes out demoulding.After demoulding, film is placed on graphite paper.Subsequently, put into the tube furnace sintering of protection of inert gas.
Following program is set: temperature program(me) is, rise to 130 DEG C and be incubated 2h from room temperature with the temperature rise rate of 1 DEG C/min, rise to 300 DEG C and be incubated 1h with the temperature rise rate of 0.5 DEG C/min, rise to 400 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C, rise to 500 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C/min, finally naturally cool to room temperature.Take out graphite paper, obtain the film sample of black, obtain SiCO micrometer ceramics cross bar on its surface.
Embodiment 6:
By ethanol cleaning ultrasonic for polytetrafluoroethyldisk disk, put into subsequently baking oven dry for standby.The F127 that takes 0.8g is dissolved in the container of dimethylbenzene of 5ml and sealing, stirs 4h and obtains mixed liquor A.In another container, add the Polyvinylsilazane of 0.8g and the dicumyl peroxide of 0.024g, be dissolved in 5ml Virahol, and sealing rapidly, magnetic agitation 4h, obtains mixed liquid B.Subsequently the solution in two containers is mixed and sealing rapidly, container is avoided irradiate light, continues churning time 24h, obtains mixed solution C.Mixed solution C is poured in the polytetrafluoroethyldisk disk of 50 DEG C of insulations and be incubated 96h, after solvent evaporation, obtain transparent film.Film is put into the baking oven heat cross-linking 40min of 130 DEG C, film becomes faint yellow from water white transparency, takes out demoulding.After demoulding, film is placed on graphite paper.Subsequently, put into the tube furnace sintering of protection of inert gas.
Following program is set: temperature program(me) is, rise to 130 DEG C and be incubated 2h from room temperature with the temperature rise rate of 1 DEG C/min, rise to 300 DEG C and be incubated 1h with the temperature rise rate of 0.5 DEG C/min, rise to 400 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C, rise to 500 DEG C and be incubated 4h with the temperature rise rate of 0.5 DEG C/min, finally naturally cool to room temperature.Take out graphite paper, obtain the film sample of black, obtain SiCO micrometer ceramics cross bar on its surface.
Claims (10)
1. a preparation method for SiCO micrometer ceramics cross bar, is characterized in that comprising the following steps:
1) 0.8g template F127 is dissolved in 5ml xylene solution, after stirring, obtains mixed liquor A;
2) the ceramic precursor Polyvinylsilazane of 0.8g is dissolved in 5ml Virahol, adds thermal cross-linking agent dicumyl peroxide, after stirring, obtain mixed liquid B;
3) mixed liquor A and mixed liquid B are mixed, after stirring, mixed solution C;
4) mixed solution C is poured in polytetrafluoroethyldisk disk, in the baking oven of 50 DEG C, is incubated, then 130 DEG C crosslinked after, become faint yellow transparent film, take out rear demoulding, then pyrolysis film in inert atmosphere, obtains SiCO micrometer ceramics cross bar at film surface.
2. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 1) in, the time of described stirring is 2～4h.
3. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 2) in, the consumption of described thermal cross-linking agent is 4% of Polyvinylsilazane quality by mass percentage.
4. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 2) in, described in add after thermal cross-linking agent dicumyl peroxide, sealing lucifuge.
5. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 2) in, described stirring adopts magnetic agitation 2～4h.
6. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 3) in, after described mixing, seal.
7. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 3) in, the time of described stirring is 18～36h.
8. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 4) in, the time of insulation is 36～96h.
9. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, is characterized in that in step 4) in, the described crosslinked time is 30～50min.
10. a kind of preparation method of SiCO micrometer ceramics cross bar as claimed in claim 1, it is characterized in that in step 4) in, the program of described pyrolysis is: rise to 130 DEG C of insulation 2h with 1 DEG C/min, rise to 300 DEG C of insulation 1h with 0.5 DEG C/min, rise to 400 DEG C of insulation 4h with 0.5 DEG C/min, rise to 500 DEG C and be incubated 4h with 0.5 DEG C/min, finally naturally cool to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410230686.3A CN103979542B (en) | 2014-05-28 | 2014-05-28 | A kind of preparation method of SiCO micrometer ceramics cross bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410230686.3A CN103979542B (en) | 2014-05-28 | 2014-05-28 | A kind of preparation method of SiCO micrometer ceramics cross bar |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103979542A true CN103979542A (en) | 2014-08-13 |
| CN103979542B CN103979542B (en) | 2016-02-03 |
Family
ID=51271750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410230686.3A Active CN103979542B (en) | 2014-05-28 | 2014-05-28 | A kind of preparation method of SiCO micrometer ceramics cross bar |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103979542B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792416A (en) * | 1996-05-17 | 1998-08-11 | University Of Florida | Preparation of boron-doped silicon carbide fibers |
| CN103073297A (en) * | 2013-02-22 | 2013-05-01 | 厦门大学 | Preparation method of SiCO ceramic nanospheres |
| CN103466590A (en) * | 2013-09-13 | 2013-12-25 | 厦门大学 | Preparation method of SiCO hollow nanospheres |
-
2014
- 2014-05-28 CN CN201410230686.3A patent/CN103979542B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792416A (en) * | 1996-05-17 | 1998-08-11 | University Of Florida | Preparation of boron-doped silicon carbide fibers |
| CN103073297A (en) * | 2013-02-22 | 2013-05-01 | 厦门大学 | Preparation method of SiCO ceramic nanospheres |
| CN103466590A (en) * | 2013-09-13 | 2013-12-25 | 厦门大学 | Preparation method of SiCO hollow nanospheres |
Non-Patent Citations (3)
| Title |
|---|
| YUXI YU: "A Facile Route to Construct SiCO Nanospheres with Tunable Sizes", 《INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY》 * |
| 蔡溪南等: "Si-Al-C-N陶瓷先驱体研究进展", 《现代化工》 * |
| 郑玉婴等: "苯及其衍生物在Pluronic嵌段共聚物胶束水溶液中的增溶", 《环境科学学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103979542B (en) | 2016-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Graphene oxide-based evaporator with one-dimensional water transport enabling high-efficiency solar desalination | |
| CN104129780B (en) | Graphene film and preparation method thereof | |
| CN103499847B (en) | Method for preparing hollow nanocone array film with optical anti-reflection function | |
| CN103073297B (en) | Preparation method of SiCO ceramic nanospheres | |
| CN106981570A (en) | A kind of fast preparation method of perovskite thin film and its application | |
| CN106395737A (en) | Method for preparing micron and nano structure array having gradient changed material surface morphology | |
| CN106992040A (en) | A kind of novel processing step of PEDOT flexible transparent electrodes | |
| CN103466590A (en) | Preparation method of SiCO hollow nanospheres | |
| CN104528740A (en) | Preparation method of ordered mesoporous silicon oxide-carbon composite material | |
| CN109023706A (en) | A kind of poly(N-isopropylacrylamide)/graphene composite material preparation method with photothermal response | |
| CN105645400A (en) | Graphene self-supporting material subjected to ion-induced assembly and preparation method thereof | |
| CN103979967B (en) | A kind of preparation method of SiCO micron order vermiform pottery | |
| CN103979969B (en) | A kind of preparation method of SiCO micrometer ceramics ball | |
| CN103272487B (en) | Method for preparing nano-porous gold film through treating graphene as template | |
| CN106082314B (en) | A kind of method that porous SnO 2 nanotube is grown in conductive substrates | |
| CN104888626A (en) | Preparation method of degradable polylactic acid microporous membrane | |
| CN103979542B (en) | A kind of preparation method of SiCO micrometer ceramics cross bar | |
| CN110451561A (en) | A kind of synthetic method of big-pore mesoporous double metal oxide semiconductor gas sensitive | |
| CN104692444B (en) | A kind of method preparing ceria nano-crystalline film | |
| CN105609216A (en) | Ink printing process-based preparation method of flexible transparent electrode | |
| CN101777431A (en) | Method for preparing carbon nanotube film electrode coated by titanium dioxide | |
| CN103979540B (en) | The preparation method of a kind of SiCO micron order strawberry shape Ceramic Balls | |
| CN103979541B (en) | The preparation method of a kind of SiCO micron order ditetrahedron pottery | |
| CN104016347B (en) | A kind of preparation method of SiCO nanometer scale ceramics spherocrystal | |
| CN103979968B (en) | A kind of preparation method of SiCO micrometer ceramics rectangular parallelepiped |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210402 Address after: 100020 605, unit 1, 6 / F, 20 Gongti East Road, Chaoyang District, Beijing Patentee after: Zhongke Runzi Technology Co.,Ltd. Address before: Xiamen City, Fujian Province, 361005 South Siming Road No. 422 Patentee before: XIAMEN University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230323 Address after: 401120 Office Building, No. 1148, Gaoyang Road, Nanjin Street Sub-district Office, Hechuan District, Chongqing Patentee after: Zhongke Runzi (Chongqing) energy saving Technology Co.,Ltd. Address before: 100020 605, unit 1, 6 / F, 20 Gongti East Road, Chaoyang District, Beijing Patentee before: Zhongke Runzi Technology Co.,Ltd. |
|
| TR01 | Transfer of patent right |