CN103972310B - A kind of preparation method of zinc oxide based p type material - Google Patents
A kind of preparation method of zinc oxide based p type material Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 239000000463 material Substances 0.000 title claims abstract description 57
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 48
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000011435 rock Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000001301 oxygen Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 239000011777 magnesium Substances 0.000 description 43
- 239000010410 layer Substances 0.000 description 32
- 230000010287 polarization Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 229910052749 magnesium Inorganic materials 0.000 description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 10
- 239000011701 zinc Substances 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 230000002269 spontaneous effect Effects 0.000 description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- -1 and such as Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a kind of preparation method of zinc oxide based p type material, belong to semiconductor material growing technical field.The method prepares graded bedding on basal layer; Graded bedding prepares cap rock; Described basal layer is the Mg of oxygen polar surfaces
xzn
1-xo (0.6>=x>=0.2) material, the thickness of basal layer is not less than 5nm; Graded bedding has the structure of content gradually variational, and its structure is Mg from bottom to top
xzn
1-xo/Mg
x-δzn
1-(x-δ)o/Mg
x-2 δzn
1-(x-2 δ)o/ ... / Mg
x-(n-1) δzn
1-[x-(n-1) δ]o/Mg
x-n δzn
1-(x-n δ)o (δ → 0, n is natural number; N δ=x; ), graded layer thickness is not more than 1 μm; The material of cap rock is ZnO, and the thickness of cap rock is not less than 300nm.Zinc oxide based p type material prepared by the method has good temperature stability.
Description
Technical field
The invention belongs to semiconductor material growing technical field, be specifically related to a kind of preparation method of zinc oxide based p type material.
Background technology
Wide bandgap semiconductor, because of its having broad application prospects in solid-state illumination, short wavelength's semiconductor laser and ultraviolet detector, is referred to as third generation semiconductor.ZnO is one of representative of wide bandgap semiconductor materials, it is a kind of direct gap semiconductor of mono-symmetry, energy gap under its room temperature is 3.37eV, there is the exciton bind energy up to 60meV, this numerical value, far above the hot ionization energy of room temperature (26meV), can ensure that it at room temperature realizes the stimulated emission of efficient excitonic luminescence and Low threshold.Therefore, ZnO is considered to prepare the ideal material of short-wave long light-emitting diode (LED) the especially opto-electronic device such as laser (LD).Compared with other wide bandgap semiconductor materials, ZnO also has aboundresources, low raw-material cost; Environmental friendliness, nontoxic; Film-forming method is simply various, and growth temperature is low; Easy acquisition can be used as the semi-conducting material of substrate and realizes homoepitaxy; Compatible with wet corrosion technique, be beneficial to a series of advantages such as optoelectronic intagration.For these reasons, the research for Zinc oxide based semiconductor photoelectron material becomes international forward position and focus.And consider that zno-based material may meet country in a series of significant problems concerning national defense safety and the national economic development such as space interplanetary communication to the key components such as short wavelength semiconductor laser, UV photodetector Strategic Demand.
At present, a series of gratifying achievement in research has been achieved to the research of ZnO both at home and abroad.After Japanese Scientists in 2004 obtains the electroluminescence of ZnO homojunction on the aluminum-magnesium acid scandium substrate of low mismatch, 2005, luminescence and application National Key Laboratory broad stopband II-VI group semiconducter research group prepare the ZnO homogeneous pn junction LED based on Sapphire Substrate in the world first, and the bluish violet electroluminescence under obtaining room temperature, subsequently, domestic and international many seminar also report ZnO homogeneous pn junction and the electroluminescence based on quantum well structure in succession.It is worth mentioning that the people such as Ryu take BeZnO as barrier layer, ZnO is LED and LD that well layer prepares quantum well-type zno-based, and obtain UV electroluminescence and Laser emission, and we also obtain the Laser emission of the royal purple wave band belonging to ZnO under room temperature condition in ZnO/GaN heterostructure, its threshold current only 0.8mA, this all illustrates that zno-based material can be competent at the needs of the short wavelength light electric device such as ultra-violet light-emitting and Low threshold Ultra-Violet Laser device completely.
But because in ZnO, the ionization energy of acceptor impurity is high, the p-type zno-based material property making conventional method prepare can not meet device requirement.Shortage preparation repeatability is high, stable, the Method and process of the p-type ZnO material of low-resistance, high mobility is still the bottleneck place hindering zno-based opto-electronic device to walk out laboratory.
Traditional p-type ZnO material preparation depends on mixes material internal by different technological means respectively or simultaneously by I race and V group element, presents acceptor state to realizing above-mentioned two race's elements in ZnO.But, theoretical and experimental result shows, the acceptor activation that can be applicable to the acceptor impurity of ZnO material can mostly at more than 200meV, and we are not difficult to obtain by the relation of acceptor impurity ionization level and acceptor activation energy, acceptor's ionization level in ZnO also not enough one thousandth, effectively cannot provide hole at all.So people have to ensure have abundant acceptor to improve the concentration in hole in material by low-temperature epitaxy and heavily doped method, but, no matter be that reduction growth temperature and excessive impurity mix the deterioration that all can cause material crystalline quality, the inhibitions to hole transport such as aggravation dislocation scattering, neutral impurity scattering and ionized impurity scattering, direct hole mobility and other physical characteristic affecting material, and the stability of severe jamming material property.Also someone passes through to be with modulation engineering, expects to reduce acceptor level, makes acceptor impurity be easy to ionization, but not yet obtain applicable effective technology means.Can see, acceptor activation energy height is the main difficulty place of preparation p-type zno-based material.If have a kind of method or technique that p-type ZnO doping can be made to break away from the constraint of high acceptor activation energy, the generation in hole is no longer relied on " the spontaneous ionization " of acceptor, just can obtain higher hole concentration under relatively low impurity doping concentration, improve acceptor impurity validity, reduce defect to the obstruction in hole, realize efficient, stable, repeatably p-ZnO.
Summary of the invention
The object of the invention is the preparation method's poor stability in order to solve existing zinc oxide based p type material, repeatable low problem, and a kind of preparation method of zinc oxide based p type material is provided.
The invention provides a kind of preparation method of zinc oxide based p type material, the method comprises:
Basal layer prepares graded bedding;
Described graded bedding prepares cap rock;
Described basal layer is the Mg of oxygen polar surfaces
xzn
1-xo (0.6>=x>=0.2) material, the thickness of described basal layer is not less than 5nm;
Described graded bedding has the structure of content gradually variational, and its structure is expressed as Mg from bottom to top
xzn
1-xo/Mg
x-δzn
1-(x-δ)o/Mg
x-2 δzn
1-(x-2 δ)o/ ... / Mg
x-(n-1) δzn
1-[x-(n-1) δ]o/Mg
x-n δzn
1-(x-n δ)o (δ → 0, n is natural number; N δ=x; Be abbreviated as graded-MgZnO), described graded layer thickness is not more than 1 μm;
The material of described cap rock is ZnO, and the thickness of cap rock is not less than 300nm.
Preferably, the thickness of described basal layer is 20-50nm.
Preferably, the thickness of described graded bedding is 50nm ~ 200nm.
Preferably, the thickness of described cap rock is 1 μm ~ 3 μm.
Preferably, described basal layer prepares on substrate.
Principle of the present invention
The invention provides a kind of preparation method of zinc oxide based p type material, the method is by the Mg in oxygen polar surface
xzn
1-xthe graded-MgZnO material layer of growth components gradual change on O material, the piezoelectric polarization that material internal is produced is consistent with spontaneous polarization direction, under the acting in conjunction of two kinds of polarization, the Mg that component is adjacent
y-δzn
1-(y-δ)o/Mg
yzn
1-y(y is arbitrary value between δ to n δ to O, δ → 0) high magnesium component side can produce charge accumulated, the amount of charge accumulated increases along with the increase of graded-MgZnO layer thickness, and the electric field formed due to charge accumulated can enable band run-off the straight, in order to neutralize the electric charge and the inclination of little energy band that are produced by polarization, make system beinthebalancestate, be forced to ionization by chief commander and produce hole, these holes form three-dimensional cavitation layer at graded-MgZnO material layer one lateral enrichment the most at last, and carry out work with charge carrier identity.Method of the present invention is not when having acceptor impurity to mix, and the field only produced by heterostructure causes hole injection just can realize hole injection; And for the material having acceptor impurity to mix, as long as polarization charge accumulation is sufficient, most acceptor can ionization, and this ionization can not be subject to the restriction of ionization energy, equally due to the impact not by acceptor's ionization energy, its hole concentration temperature influence of p-ZnO sill utilizing polarization abductive approach to obtain is little, and this makes it have good temperature stability.
Beneficial effect of the present invention
The invention provides a kind of preparation method of zinc oxide based p type material, polarization abductive approach is applied to zno-based wide-band gap material system by the method, carry out the preparation of p-type zno-based material, the electric charge that polarization abductive approach utilizes polarization to accumulate and electric field promote the ionization of acceptor, its application makes zno-based material break away from the high restriction of acceptor's ionization energy, compared with " sitting back and waiting " acceptor's " spontaneous ionization " with conventional method, be " making an initiative sally "; By the way of polarization induction, greatly can improve the ionization level of acceptor and the doping efficiency of acceptor impurity, solve a difficult problem for zno-based P-type Doping, method repeatability of the present invention is high, simultaneously due to the impact not by acceptor's ionization energy, the material electric property temperature influence prepared by the method is little, has good temperature stability.
Accompanying drawing explanation
Fig. 1 is the structural representation of the zinc oxide based p type material that preparation method of the present invention obtains.
Fig. 2 be in the zno-based p-type material prepared of the inventive method in graded bedding Mg and Zn component with the relation curve of the change of graded layer thickness.
Embodiment
The invention provides a kind of preparation method of zinc oxide based p type material, as shown in Figure 1, the method comprises:
Basal layer 102 is prepared graded bedding 103;
Described graded bedding 103 prepares cap rock 104;
Described basal layer 102 is the Mg of oxygen polar surfaces
xzn
1-xo material, the thickness of described basal layer is not less than 5nm, is preferably 20-50nm, must makes himself to have complete structure, realizes controlling to the polarity of subsequent structural;
Described graded bedding 103 has content gradually variational structure, and graded bedding Mg component reduces to 0 from the x (0.6>=x>=0.2) basal layer gradually with varied in thickness, and its structure can be expressed as Mg from bottom to top
xzn
1-xo/Mg
x-δzn
1-(x-δ)o/Mg
x-2 δzn
1-(x-2 δ)o/ ... / Mg
x-(n-1) δzn
1-[x-(n-1) δ]o/Mg
x-n δzn
1-(x-n δ)o (ZnO) (δ → 0, n is natural number; N δ=x; Be abbreviated as graded-MgZnO), δ be between 0-1 a certain level off to 0 numerical value, to ensure Mg component from x with a certain Grad consecutive variations, can think the gradient of Mg component, graded bedding lower surface Mg component is consistent with basal layer, i.e. Mg
xzn
1-xo (0.6>=x>=0.2), graded bedding upper surface Mg content is 0, i.e. ZnO, and described graded layer thickness is not more than 1 μm (micron), is preferably 50nm ~ 200nm;
The material of described cap rock 104 is ZnO, the thickness of cap rock is not less than 300nm, and preferable range is 1 μm ~ 3 μm, must make himself to have perfect lattice structure, and constraint is produced to graded bedding lattice, make piezoelectric polarization in graded bedding consistent with material spontaneous polarization direction.
Basal layer 102 of the present invention can independently exist, and preferably prepares on the substrate 101.
Basal layer 102 of the present invention, graded bedding 103 and cap rock 104 are oxygen polarity.
The material of graded bedding of the present invention be prepared as prior art, graded bedding of the present invention is not unique, can be the alloy of other metal except Mg and ZnO, as Be yet
xzn
1-xo/Be
x-δzn
1-(x-δ)o/Be
x-2 δzn
1-(x-2 δ)o/ ... / Be
x-(n-1) δzn
1-[x-(n-1) δ]o/Be
x-n δzn
1-(x-n δ)o (ZnO) (δ → 0, n is natural number; N δ=x), but choose basal layer and cap rock should match with graded bedding, make the spontaneous polarization in total consistent with piezoelectric polarization direction.Basal layer of the present invention can carry out the doping of known ZnO acceptor impurity, and such as, acceptor impurity can be: the V group elements such as N, P, As, Sb, or the I race element such as Li, Na, K.
Fig. 2 be in the zno-based p-type material prepared of the inventive method in graded bedding Mg and Zn component with the relation curve of the change of thickness, in figure, transverse axis represents component, the longitudinal axis represents the thickness counted from substrate surface, X refers to the component of Mg in graded bedding upper surface, what curve 201 represented is the change of Mg component with thickness, shown in curve 202 is the change of Zn component with thickness, and curve 201 and curve 202 have corresponding relation with the structure on right side.From curve 201, we can see, Mg component reduces to 0 from X gradually with graded layer thickness, correspondingly, Zn component shown in curve 202 increases with graded layer thickness and is increased to 1 from (1-X) gradually, and notice, this variation tendency linearly changes.Like this, basal layer can realize fettering the lattice of graded bedding lower surface, adjacent Mg in graded bedding
y-δzn
1-(y-δ)o/Mg
yzn
1-ythe piezoelectricity and spontaneous polarization superposition in the same way of O (y is arbitrary value between δ to n δ, δ → 0) interlayer, cap rock fetters graded bedding upper surface.
Below in conjunction with embodiment, further detailed description is done to the present invention.
Embodiment 1
By the specific implementation method of MOCVD preparation polarization induction p-type ZnO material
Zinc source adopts diethyl zinc, magnesium source adopts the luxuriant magnesium of dimethyl two, oxygen source to adopt oxygen, zinc source, magnesium source splendid attire are in bubbling bottle, by carrier gas (nitrogen), the effective ingredient in bubbling bottle is taken out of, in the present embodiment, the organic source capsule road of MOCVD system is standard pipeline, therefore pass into the amount in the source of reaction chamber and the temperature in source and carrier gas flux about (temperature in source is higher, carrier gas flux is larger, and the amount passing into the source of reaction chamber is more).
Step 1, substrate prepares: the C surface sapphire substrate of oxygen polarity cleaned, be placed in MOCVD reaction chamber (shown in corresponding diagram 1 101)
Step 2, carries out Mg at sapphire substrate surface
xzn
1-xthe growth of O basal layer: zinc source temperature is 0 DEG C, carrier gas flux 10sccm, oxygen flow 60sccm; 70 DEG C, magnesium source, carrier gas flux 20sccm.At the basal layer of graded layer surface growth 30nm.Mg
xzn
1-xin O, Mg component is 30%, i.e. Mg
0.3zn
0.7o, is oxygen polarity (shown in corresponding diagram 1 102)
Step 3, basal layer carries out the growth of graded bedding: keep zinc source temperature to be 0 DEG C, carrier gas flux 10sccm, oxygen flow 60sccm, continue to pass into reative cell; Magnesium source is passed into reaction chamber, magnesium source temperature is cooled to 20 DEG C from 70 DEG C with 0.05 DEG C/5s speed, carrier gas flux 20sccm simultaneously, and due to the decline of source temperature, in reaction chamber, magnesium source content reduces gradually, and the content of magnesium in prepared film is reduced gradually.Basal layer grows the graded bedding of 70nm.(shown in corresponding diagram 1 103)
Step 4, graded bedding carries out the growth of ZnO cap rock: keep zinc source temperature to be 0 DEG C, carrier gas flux is 10sccm, and oxygen flow is 60sccm, stops passing into magnesium source.Zn polar surfaces zno-based plinth layer (shown in corresponding diagram 1 104) that deposition 1 μm is thick on graded bedding.
The explanation of above embodiment just understands method of the present invention and core concept thereof for helping.It should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention, can also carry out some improvement and modification to the present invention, these improve and modify and also fall in the protection range of the claims in the present invention.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to these embodiments shown in this article, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a preparation method for zinc oxide based p type material, is characterized in that, the method comprises:
Basal layer prepares graded bedding;
Described graded bedding prepares cap rock;
Described basal layer is the Mg of oxygen polar surfaces
xzn
1-xo material, wherein 0.6>=x>=0.2, the thickness of described basal layer is not less than 5nm;
Described graded bedding has the structure of content gradually variational, and its structure is expressed as Mg from bottom to top
xzn
1-xo/Mg
x-δzn
1-(x-δ)o/Mg
x-2 δzn
1-(x-2 δ)o/ ... / Mg
x-(n-1) δzn
1-[x-(n-1) δ]o/Mg
x-n δzn
1-(x-n δ)o wherein, δ → 0, n is natural number, n δ=x, and described graded layer thickness is not more than 1 μm;
The material of described cap rock is ZnO, and the thickness of cap rock is not less than 300nm.
2. the preparation method of a kind of zinc oxide based p type material according to claim 1, is characterized in that, the thickness of described basal layer is 20-50nm.
3. the preparation method of a kind of zinc oxide based p type material according to claim 1, is characterized in that, the thickness of described graded bedding is 50nm ~ 200nm.
4. the preparation method of a kind of zinc oxide based p type material according to claim 1, is characterized in that, the thickness of described cap rock is 1 μm ~ 3 μm.
5. the preparation method of a kind of zinc oxide based p type material according to claim 1, it is characterized in that, described basal layer prepares on substrate.
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| US9865766B2 (en) | 2015-07-28 | 2018-01-09 | Carrier Corporation | Ultraviolet photodetectors and methods of making ultraviolet photodetectors |
| US9806125B2 (en) | 2015-07-28 | 2017-10-31 | Carrier Corporation | Compositionally graded photodetectors |
| CN106876504A (en) * | 2017-01-16 | 2017-06-20 | 复旦大学 | A kind of zno-based p i n structure ultraviolet detectors and preparation method thereof |
| CN110164993A (en) * | 2019-06-05 | 2019-08-23 | 中国科学院长春光学精密机械与物理研究所 | A kind of ultraviolet band multi-wavelength detector and preparation method thereof |
| CN112195438B (en) * | 2020-09-10 | 2022-02-22 | 湖北大学 | Nitrogen-doped p-type transparent conductive BeZnOS film and preparation method and application thereof |
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| CN101381891A (en) * | 2008-10-20 | 2009-03-11 | 中国科学院物理研究所 | Method for preparing MgZnO single crystal film |
| CN102569483A (en) * | 2011-12-19 | 2012-07-11 | 北京交通大学 | MgZnO solar-blind photoresistor and preparation method thereof |
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| CN101381891A (en) * | 2008-10-20 | 2009-03-11 | 中国科学院物理研究所 | Method for preparing MgZnO single crystal film |
| CN102569483A (en) * | 2011-12-19 | 2012-07-11 | 北京交通大学 | MgZnO solar-blind photoresistor and preparation method thereof |
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