CN103972262A - Organic light-emitting display device and manufacture method thereof - Google Patents
Organic light-emitting display device and manufacture method thereof Download PDFInfo
- Publication number
- CN103972262A CN103972262A CN201310580761.4A CN201310580761A CN103972262A CN 103972262 A CN103972262 A CN 103972262A CN 201310580761 A CN201310580761 A CN 201310580761A CN 103972262 A CN103972262 A CN 103972262A
- Authority
- CN
- China
- Prior art keywords
- layer
- grid
- light
- display device
- led display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses an organic light-emitting display device comprising an array substrate and a color film substrate facing each other. The array substrate comprises a thin-film transistor drive layer arranged on a base plate, a pixel defining layer, an organic light-emitting layer, and a grid; the pixel defining layer is disposed on the organic light-emitting layer and defines pixel light-emitting areas; the organic light-emitting layer is disposed in the pixel light-emitting area on the thin-film transistor drive layer; the grid is disposed outside the pixel light-emitting areas and surrounds every pixel light-emitting area. The organic light-emitting display device has the advantages that display frame color mixing occurs less rarely and utilization rate of white light is increased.
Description
Technical field
The present invention relates to flat panel display, particularly a kind of organic light-emitting display device and manufacture method thereof.
Background technology
In recent years, due to white organic LED (White Organic Light Emitting Diode, WOLED) can make the light source sheet that paper is equally thin, and can be used for doing backlight and all colour organic luminous display unit of liquid crystal display, therefore, white organic LED becomes a kind of important Display Technique gradually.
Conventionally, all colour organic luminous display unit has been continued to use liquid crystal indicator (Liquid CrystalDisplay, LCD) principle of true color, utilize white organic LED luminous, re-use color filter film and leach three primary colors, in conjunction with the colorized optical filtering chip technology of maturation of existing market volume production technology, realize true color and show.
As shown in Figure 1, all colour organic luminous display unit 1 of prior art drives evaporation organic luminous layer 12 on layer 11 at the thin-film transistor of array base palte, collocation color filter film substrate 13(Color Filter, CF) realize full-color demonstration.After organic luminous layer 12 is excited, send white light L, white light L sees through color filter film substrate 13 and shows respectively blue (B) the three kinds of colors of red (R) green (G).But owing to being not to fit completely between color filter film substrate 13 and array base palte 10, be scattered with sept 14 between the two to support, therefore, between color filter film substrate 13 and array base palte 10, have the existence in box gap 141.In the time that organic luminous layer 12 parts of sub-pixel corresponding to tri-kinds of colors of RGB are lighted, there will be mixed color phenomenon.Concrete, as shown in Figure 1, suppose to only have the organic luminous layer 12 of the sub-pixel that G is corresponding to be lit, the organic luminous layer 12 of the sub-pixel that R and B are corresponding is in closed condition, owing to there being box gap 14 between substrate, the white light L that M point sends should only pass through G color filter film, but when larger at light inclination angle, also have R color filter film and the B color filter film of part white light L from color filter film substrate 13 and appear.
Shown in Fig. 2, in the time that visual angle tilts to 70 °, the brightness of all colour organic luminous display unit 1 is about 60% of high-high brightness, with great visual angle time, all colour organic luminous display unit 1 still has higher brightness, and therefore display frame meeting produces more serious mixed color phenomenon.In addition, because white light L is divergent shape outgoing, the light that makes finally to be sent by G color filter film only accounts for a part of the white light L that M point sends, and another part white light L is by R color filter film and the ejaculation of B color filter film or be lost in box gap 14, thereby causes the reduction of white light utilance.
Summary of the invention
In view of this, the invention provides a kind of organic light-emitting display device and manufacture method thereof.
For achieving the above object, the invention provides a kind of organic LED display device, comprise the array base palte and the color membrane substrates that are oppositely arranged, described array base palte comprises: thin-film transistor drives layer, is arranged on described substrate; Pixel defining layer, is arranged on described organic luminous layer, limits pixel light-emitting zone; Organic luminous layer, is arranged in described pixel light-emitting zone, and is positioned on described thin-film transistor driving layer; Grid, is arranged at the periphery of described pixel light-emitting zone, and around each described pixel light-emitting zone surrounding.
The present invention also provides a kind of manufacture method of manufacturing organic LED display device, comprising: a substrate is provided; On described substrate, form thin-film transistor and drive layer; Drive on layer and form pixel defining layer at described thin-film transistor, and described pixel defining layer limits pixel light-emitting zone; Periphery at described pixel light-emitting zone forms grid, and described grid is around the surrounding of each described pixel light-emitting zone; In described pixel light-emitting zone, form organic luminous layer
By form lattice structure between pixel light-emitting zone, the light that organic luminous layer sends can the corresponding color filter layer outgoing from adjacent pixel, thereby has reduced display frame mixed color phenomenon, and then has improved the utilance of white light.Meanwhile, grid can also substitute traditional interval body, for supporting array base palte and color membrane substrates.Owing to being provided with grid around each pixel, compare traditional columnar interval body that is distributed in panel diverse location, adopt grid can form organic light-emitting display device more uniformly.
Brief description of the drawings
Fig. 1 is the structural representation of all colour organic luminous display unit of prior art;
Fig. 2 is luminous intensity-visual angle curve chart of all colour organic luminous display unit of prior art;
Fig. 3 is the vertical view of the organic light-emitting display device of the embodiment of the present invention;
Fig. 4 is that the organic light-emitting display device of Fig. 3 is along the cross-sectional view in A-A ' cross section;
Fig. 5 is the structural representation of the organic light-emitting display device of another embodiment of the present invention;
Fig. 6 is that the organic light-emitting display device of Fig. 5 is along the cross-sectional view in B-B ' cross section
Fig. 7 a~7f is the manufacture method flow chart of organic light-emitting display device of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage are clearer, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment mono-
Fig. 3 is the vertical view of the organic light-emitting display device of the embodiment of the present invention, and the organic light-emitting display device that Fig. 4 is Fig. 3 is along the cross-sectional view in A-A ' cross section.As shown in Figure 3, the organic light-emitting display device of the embodiment of the present invention one comprises array base palte 20, multiple pixel light-emitting zones 201 that limited by pixel defining layer (not shown) are matrix and arrange on array base palte 20, be provided with grid 202 in the periphery of each pixel light-emitting zone 201, and grid 202 is centered around the surrounding of each pixel light-emitting zone 201.Between pixel, be also provided with the black matrix 211 for shading.
As shown in Figure 4, array base palte 20 comprises a substrate 203, on substrate 203, be provided with thin-film transistor and drive layer 204, thin-film transistor drives concrete thin film transistor switch, data wire and the gate line (not shown) of comprising of layer 204, is used for controlling organic light-emitting device and shows.Wherein, thin film transistor switch (TFT, Thin Film Transistor, TFT) can adopt low temperature polycrystalline silicon, oxide semiconductor TFT.Drive on layer 204 and be coated with reflection electrode layer 205 at thin-film transistor, between reflection electrode layer 205, be provided with pixel defining layer 206, limit pixel light-emitting zone 201, organic luminous layer 207 is arranged in pixel light-emitting zone 201, and covers reflection electrode layer 205.Reflection electrode layer 205 has highly reflective, the light being sent by organic luminous layer 207 reflects through reflection electrode layer 205, send from the top of organic light-emitting display device, light does not drive layer 204 through substrate 203 and thin-film transistor, therefore can not be subject to blocking of thin-film transistor and metal wire, even if the quantity of thin-film transistor is many again, the problem that also can not cause aperture opening ratio to decline.
In order to reach the object of organic light-emitting display device 2 true colors, at array base palte 20 relative positions, color membrane substrates 21 is set.Color membrane substrates 21 comprises substrate 210, be formed on the black matrix 211 on substrate 210, black matrix 211 is corresponding with pixel defining layer 206 positions of array base palte 20, chromatic filter layer 212 is formed on black matrix 211, and the present embodiment comprises red filter layer R, green filter layer G and blue color filter layer B.
Between array base palte 20 and color membrane substrates 21, have obturator 220, in the present embodiment, obturator adopts liquid drier, and liquid drier is generally metal complex, can reach 1.8~2.0 or higher according to the different refractivity of material.Certainly, above are only the one of the present embodiment, obturator can also be air layer.
Continue with reference to figure 4, in pixel defining layer 206, be provided with multiple transparent grids 202, each grid 202 is centered around respectively the surrounding of pixel light-emitting zone 201, that is: the separate periphery that is arranged at pixel light-emitting zone 201 of each grid 202, and around each pixel light-emitting zone 201 surroundings.The grid of pixel light-emitting zone 201 adopts the material of refractive index lower than obturator, and the refractive index of grid 26 is lower than the refractive index of obturator 220.Preferably, refractive index difference Δ n >=0.1 of grid refractive index and described obturator.Because the refractive index of grid 26 is lower than obturator 220, the light L sending when organic luminous layer 207 enters the grid 26 of low-refraction via the obturator 220 of high index of refraction, in the time arriving the interface of obturator 220 and grid 26, there is total reflection in part light L1, send from the corresponding green of pixel (G) filter layer emitting beam, emit beam from the filter layer of desired color; Another part light L2 enters grid 26, and reflects in grid 26 and the interface of obturator 220, and because light L incidence angle α is greater than refracted ray L2 refraction angle β, (incidence angle α is the angle between light L and normal; Refraction angle β is the angle between refracted ray L2 and normal), therefore, light L2 can be stopped by the black matrix 211 between two adjacent pixel light-emitting zones, can corresponding blueness (B) the colour filter outgoing from adjacent pixel, thereby reduce display frame mixed color phenomenon, and then improved the utilance of white light.
In addition, for reaching the object that reduces display frame mixed color phenomenon, the angle between grid side and base is not more than 90 °.In the present embodiment, the vertical cross-section of grid 202 is trapezoidal, meanwhile, can be also rectangle or semicircle.Grid can also substitute traditional interval body, for supporting array base palte and color membrane substrates.Owing to being provided with grid around each pixel, compare traditional columnar interval body that is distributed in panel diverse location, adopt grid can form organic light-emitting display device more uniformly.
In the present embodiment, grid adopts transparent material, and transmitance is preferably in more than 80%, for example can adopt silicon nitride, silicon dioxide, polyflon or its colloidal sol, also can adopt thin film of titanium oxide material, this is because these materials have lower refractive index, is about 1.0~1.8.And the size of grid can be thick according to box, the size of pixel light-emitting zone size and pixel defining layer is carried out any optimal design, to reach the object that reduces display frame colour mixture and improve light utilization efficiency as far as possible.
Continue, with reference to shown in 4, in the color filter layer 212 of color membrane substrates 21, to form one deck planarization layer 213, preferred, the materials such as the resinae that planarization layer 213 selective refraction rates are lower, can further reduce display frame colour mixture and improve light utilization efficiency.Concrete, the material of planarization layer can carry out collocation arbitrarily according to the refractive index of grid material and select.
It should be noted that, filler and grid all can calculate and select suitable material adapted according to theory, to reach the optimization in display effect, as long as meet the refractive index of grid lower than the refractive index of filler.
Embodiment bis-
Fig. 5 is the structural representation of the present embodiment organic light-emitting display device; Fig. 6 is that the organic light-emitting display device of Fig. 5 is along the cross-sectional view in B-B ' cross section.As shown in Figure 5, the organic light-emitting display device of the embodiment of the present invention two comprises array base palte 20, multiple pixel light-emitting zones 201 that limited by pixel defining layer (not shown) are matrix and arrange on array base palte 20, be provided with grid 202 in the periphery of each pixel light-emitting zone 201, and grid 202 is centered around the surrounding of each pixel light-emitting zone 201.Between pixel, be also provided with the black matrix 211 for shading.
As shown in Figure 6, array base palte 20 comprises a substrate 203, on substrate 203, be provided with thin-film transistor and drive layer 204, thin-film transistor drives concrete thin film transistor switch, data wire and the gate line (not shown) of comprising of layer 204, is used for controlling organic light-emitting device and shows.Wherein, thin film transistor switch can adopt low temperature polycrystalline silicon, oxide semiconductor TFT.Drive on layer 204 and be coated with reflection electrode layer 205 at thin-film transistor, between reflection electrode layer 205, be provided with pixel defining layer 206, limit pixel light-emitting zone 201, organic luminous layer 207 is arranged in pixel light-emitting zone 201, and covers reflection electrode layer 205.Reflection electrode layer 205 has highly reflective, the light being sent by organic luminous layer 207 reflects through reflection electrode layer 205, send from the top of organic light-emitting display device, light does not drive layer 204 through substrate 203 and thin-film transistor, therefore can not be subject to blocking of thin-film transistor and metal wire, even if the quantity of thin-film transistor is many again, the problem that also can not cause aperture opening ratio to decline.
In order to reach the object of organic light-emitting display device 2 true colors, at array base palte 20 relative positions, color membrane substrates 21 is set.Color membrane substrates 21 comprises substrate 210, be formed on the black matrix 211 on substrate 210, black matrix 211 is corresponding with pixel defining layer 206 positions of array base palte 20, and chromatic filter layer 212 is formed on black matrix 211, and the present embodiment comprises green filter layer G and blue color filter layer B.
Between array base palte 20 and color membrane substrates 21, have obturator 220, in the present embodiment, obturator adopts liquid drier, and liquid drier is generally metal complex, can reach 1.8~2.0 or higher according to the different refractivity of material.Certainly, above are only the one of the present embodiment, obturator can also be air layer.
Continue with reference to figure 6, in pixel defining layer 206, be provided with grid 202, in the present embodiment, grid 22 is an interconnective entirety, be centered around the surrounding of pixel light-emitting zone 201, that is: grid 202 is arranged at the periphery of pixel light-emitting zone 201, and around each pixel light-emitting zone 201 surroundings.Meanwhile, the grid of pixel light-emitting zone 201 adopts opaque material, for example: ferrous metal chromium (Cr) and oxide (CrOx) or both composite beds can be also black resins.When the light L sending when organic luminous layer 207 arrives the interface of grid 26 via obturator 220, light that should outgoing is absorbed by opaque grid 26, can corresponding blueness (B) the colour filter outgoing from adjacent pixel, thereby reduce display frame mixed color phenomenon, and then improved the utilance of white light.It should be noted that, the size of grid can be thick according to box, the size of pixel light-emitting zone size and pixel defining layer is carried out any optimal design, to reach the object that reduces display frame colour mixture and improve light utilization efficiency as far as possible.
In addition, for reaching the object that reduces display frame mixed color phenomenon, the angle between grid side and base is not more than 90 °.In the present embodiment, the vertical cross-section of grid 202 is trapezoidal, meanwhile, can be also rectangle or semicircle.Grid can also substitute traditional interval body, for supporting array base palte and color membrane substrates.Owing to being provided with grid around each pixel, compare traditional columnar interval body that is distributed in panel diverse location, adopt grid can form organic light-emitting display device more uniformly.
Continue, with reference to shown in 4, in the color filter layer 212 of color membrane substrates 21, to form one deck planarization layer 213, preferred, the materials such as the resinae that planarization layer 213 selective refraction rates are lower, can further reduce display frame colour mixture and improve light utilization efficiency.Concrete, the material of planarization layer can carry out collocation arbitrarily according to the refractive index of grid material and select.
It should be noted that, filler and grid all can calculate and select suitable material adapted according to theory, to reach the optimization in display effect, as long as meet the refractive index of grid lower than the refractive index of filler.
Embodiment tri-
The present embodiment has specifically described the manufacture method of manufacturing organic light-emitting display device in above two kinds of embodiment.
As shown in Figure 7a, provide a substrate 203, can adopt glass substrate.On substrate 203, form thin-film transistor and drive layer 204, thin-film transistor drives concrete thin film transistor switch, data wire and the gate line (not shown) of comprising of layer 204, is used for controlling organic light-emitting device and shows.Wherein, thin film transistor switch (TFT, thin film transistor) can adopt low temperature polycrystalline silicon, oxide semiconductor TFT.
Next, as shown in Figure 7b, thin-film transistor drives on layer 204 and deposits whole conductive layer, and as tin indium oxide-Yin-tin indium oxide composite bed (ITO-Ag-ITO), patterned conductive layer, forms reflecting electrode 205 by wet etching.Reflecting electrode can form arbitrary graphic pattern according to product resolution and light-emitting zone size.
Then, as shown in Figure 7 c, drive layer 204 at thin-film transistor, expose by coating, form pixel defining layer (PDL) 206, and described pixel defining layer limits pixel light-emitting zone.The resolution equal-specification of setting when the dimension of picture of pixel defining layer also can be by product development determines.
Then, can make grid by chemical vapour deposition (CVD), the methods such as exposure, sol-gel or photoetching-ion-exchange that apply.In the present embodiment, adopt and apply exposure method, specifically comprise: as shown in Fig. 7 d, in whole reflection electrode layer 205 and pixel defining layer 206, deposit certain thickness grid layer, patterned gate compartment afterwards, exposure is cleaned, periphery at pixel light-emitting zone forms grid 202, and grid 202 is around the surrounding of each described pixel light-emitting zone.
Grid can adopt transparent material, for example, can adopt silicon nitride, silicon dioxide, polyflon or its colloidal sol, also can adopt thin film of titanium oxide material, and this is because these materials have lower refractive index, is about 1.0~1.8.The transmitance of transparent grid is preferably in more than 80%.In addition, grid also can adopt opaque material, and for example ferrous metal chromium (Cr) and oxide (CrOx) or both composite beds can be also black resins.
In the present embodiment, comprise the grid 202 of multiple separate settings, be centered around respectively the surrounding of each pixel light-emitting zone, also grid 202 can be patterned as to the unified global pattern connecting, as long as meet grid 202 and be formed on the periphery of pixel light-emitting zone, and around the surrounding of each described pixel light-emitting zone.
By form lattice structure between pixel light-emitting zone, the light that organic luminous layer sends can the corresponding color filter layer outgoing from adjacent pixel, thereby has reduced display frame mixed color phenomenon, and then has improved the utilance of white light.Meanwhile, grid can also substitute traditional interval body, for supporting array base palte and color membrane substrates.Owing to being provided with grid around each pixel, compare traditional columnar interval body that is distributed in panel diverse location, adopt grid can form organic light-emitting display device more uniformly.
Then,, by methods such as hot evaporation, ink-jet or rotary coatings, in described pixel light-emitting zone, form organic luminous layer 207, as shown in Fig. 7 e.Organic luminous layer can comprise sandwich construction.
Then; enter laminating encapsulated phase, on the substrate that forms grid 202, inject obturator 220, obturator 220 can adopt liquid drier; under the protection of the protective gas such as nitrogen or argon gas, the encapsulation of in encapsulation board, array base palte 20 and color membrane substrates 21 being fitted.Color membrane substrates 21 comprises substrate 210, be formed on the black matrix 211 on substrate 210, black matrix 211 is corresponding with pixel defining layer 206 positions of array base palte 20, and chromatic filter layer 212 is formed on black matrix 211, and the present embodiment comprises green filter layer G and blue color filter layer B.
The organic light-emitting display device and the manufacture method thereof that above the embodiment of the present invention are provided are described in detail, applied specific case herein principle of the present invention and execution mode are set forth, the explanation of above embodiment is just for helping to understand method of the present invention and core concept thereof; , for one of ordinary skill in the art, according to thought of the present invention, all will change in specific embodiments and applications, in sum, this description should not be construed as limitation of the present invention meanwhile.
Claims (14)
1. an organic LED display device, comprises the array base palte and the color membrane substrates that are oppositely arranged, it is characterized in that, described array base palte comprises:
Thin-film transistor drives layer, is arranged on substrate;
Pixel defining layer, is arranged at described thin-film transistor and drives layer upper, limits pixel light-emitting zone;
Organic luminous layer, is arranged in described pixel light-emitting zone, and is positioned on described thin-film transistor driving layer;
Grid, is arranged at the periphery of described pixel light-emitting zone, and around each described pixel light-emitting zone surrounding.
2. organic LED display device as claimed in claim 1, is characterized in that, also comprises the obturator being arranged between described array base palte and color membrane substrates.
3. organic LED display device as claimed in claim 2, is characterized in that, described obturator is liquid drier.
4. organic LED display device as claimed in claim 2, is characterized in that, described grid adopts light transmissive material, and its refractive index is less than the refractive index of described obturator.
5. organic LED display device as claimed in claim 4, is characterized in that, refractive index difference Δ n >=0.1 of described grid refractive index and described obturator.
6. organic LED display device as claimed in claim 4, is characterized in that, described grid can be silicon nitride, silica, polyflon or thin film of titanium oxide material.
7. organic LED display device as claimed in claim 1, is characterized in that, described grid adopts light-proof material.
8. organic LED display device as claimed in claim 7, is characterized in that, described grid can be ferrous metal chromium and metal oxide thereof, or black resin material.
9. the organic LED display device as described in claim 4 or 7, is characterized in that, described grid is multiple and mutual independent setting, or described grid is interconnective entirety.
10. organic LED display device as claimed in claim 1, is characterized in that, the vertical cross-section of described grid is trapezoidal, rectangle or semicircle.
11. organic LED display devices as claimed in claim 1, is characterized in that, the angle between described grid side and base is not more than 90 °.
The manufacture method of 12. 1 kinds of organic LED display devices, comprising:
One substrate is provided;
On described substrate, form thin-film transistor and drive layer;
Drive on layer and form pixel defining layer at described thin-film transistor, wherein said pixel defining layer limits pixel light-emitting zone;
Periphery at described pixel light-emitting zone forms grid, and described grid is around the surrounding of each described pixel light-emitting zone;
In described pixel light-emitting zone, form organic luminous layer.
The manufacture method of 13. organic LED display devices as claimed in claim 12, it is characterized in that, form pixel defining layer on described thin-film body pipe driving layer before, also comprise: drive the reflection electrode layer that forms patterning on layer at described thin-film transistor.
The manufacture method of 14. organic LED display devices as claimed in claim 12, it is characterized in that, periphery at described pixel light-emitting zone forms grid, and described grid specifically comprises around the surrounding step of each described pixel light-emitting zone: in described organic luminous layer and pixel defining layer, apply grid layer; Grid layer described in patterning, forms the grid around each described pixel light-emitting zone surrounding.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310580761.4A CN103972262B (en) | 2013-11-19 | 2013-11-19 | A kind of organic light-emitting display device and its manufacture method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310580761.4A CN103972262B (en) | 2013-11-19 | 2013-11-19 | A kind of organic light-emitting display device and its manufacture method |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103972262A true CN103972262A (en) | 2014-08-06 |
CN103972262B CN103972262B (en) | 2017-06-06 |
Family
ID=51241567
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310580761.4A Active CN103972262B (en) | 2013-11-19 | 2013-11-19 | A kind of organic light-emitting display device and its manufacture method |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN103972262B (en) |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409659A (en) * | 2014-12-18 | 2015-03-11 | 上海天马有机发光显示技术有限公司 | Organic light emitting diode and manufacturing method thereof |
CN105607338A (en) * | 2016-03-24 | 2016-05-25 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
CN105633121A (en) * | 2016-01-05 | 2016-06-01 | 京东方科技集团股份有限公司 | Electroluminescent display panel, manufacturing method therefor, and display apparatus |
CN105810716A (en) * | 2016-04-01 | 2016-07-27 | 友达光电股份有限公司 | Flexible display device and fabrication method thereof |
CN106910841A (en) * | 2017-03-31 | 2017-06-30 | 昆山国显光电有限公司 | Array base palte and its manufacture method and OLED |
CN108022961A (en) * | 2017-11-09 | 2018-05-11 | 上海天马有机发光显示技术有限公司 | Organic electroluminescence display panel and display device |
CN109244116A (en) * | 2018-09-27 | 2019-01-18 | 上海天马微电子有限公司 | Display panel and display device |
CN109300961A (en) * | 2018-10-15 | 2019-02-01 | 合肥鑫晟光电科技有限公司 | Oled display substrate and preparation method thereof, display device |
CN109445164A (en) * | 2018-09-30 | 2019-03-08 | 武汉天马微电子有限公司 | Display panel and display device |
CN110137237A (en) * | 2019-06-06 | 2019-08-16 | 京东方科技集团股份有限公司 | Peep-proof device and display device |
CN110246876A (en) * | 2019-06-03 | 2019-09-17 | 深圳市华星光电半导体显示技术有限公司 | A kind of luminous layer structure and display device |
CN110444689A (en) * | 2019-08-19 | 2019-11-12 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
CN110620136A (en) * | 2019-10-30 | 2019-12-27 | 京东方科技集团股份有限公司 | Display substrate and display panel comprising same |
WO2020063158A1 (en) * | 2018-09-28 | 2020-04-02 | 深圳光峰科技股份有限公司 | Led display screen |
CN111162104A (en) * | 2019-12-25 | 2020-05-15 | 武汉华星光电半导体显示技术有限公司 | Color filter structure and OLED display panel |
CN113054136A (en) * | 2021-03-11 | 2021-06-29 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and display device |
CN113471269A (en) * | 2021-06-30 | 2021-10-01 | 昆山国显光电有限公司 | Display panel, preparation method of display panel and display device |
US20220045306A1 (en) * | 2020-08-07 | 2022-02-10 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and electronic device |
CN114545677A (en) * | 2022-02-24 | 2022-05-27 | 京东方科技集团股份有限公司 | Reflective display module and display device |
US11411053B2 (en) | 2019-12-25 | 2022-08-09 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Color filter structure doped with nanoparticle and OLED display panel |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040119398A1 (en) * | 2002-12-20 | 2004-06-24 | Jae-Bon Koo | Luminance improved organic electroluminescent device |
KR20070068226A (en) * | 2005-12-26 | 2007-06-29 | 엘지전자 주식회사 | Pointer for depositing compensation of organic light emitting diode |
CN101090149A (en) * | 2006-06-12 | 2007-12-19 | Lg.菲利浦Lcd株式会社 | Organic light emitting device and method for fabricating the same |
CN102110788A (en) * | 2009-11-30 | 2011-06-29 | 三星移动显示器株式会社 | Method of manufacturing organic light emitting display apparatus and organic light emitting display apparatus |
CN102231429A (en) * | 2011-06-30 | 2011-11-02 | 四川虹视显示技术有限公司 | Organic light-emitting diode (OLED) display device, package structure and package method |
CN102969453A (en) * | 2012-09-13 | 2013-03-13 | 昆山维信诺显示技术有限公司 | Graphical transport layer, organic light-emitting diode (OLED) device containing graphical transport layer and preparation method |
CN103187533A (en) * | 2011-12-30 | 2013-07-03 | 昆山维信诺显示技术有限公司 | Organic light-emitting device and preparation method thereof |
-
2013
- 2013-11-19 CN CN201310580761.4A patent/CN103972262B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040119398A1 (en) * | 2002-12-20 | 2004-06-24 | Jae-Bon Koo | Luminance improved organic electroluminescent device |
KR20070068226A (en) * | 2005-12-26 | 2007-06-29 | 엘지전자 주식회사 | Pointer for depositing compensation of organic light emitting diode |
CN101090149A (en) * | 2006-06-12 | 2007-12-19 | Lg.菲利浦Lcd株式会社 | Organic light emitting device and method for fabricating the same |
CN102110788A (en) * | 2009-11-30 | 2011-06-29 | 三星移动显示器株式会社 | Method of manufacturing organic light emitting display apparatus and organic light emitting display apparatus |
CN102231429A (en) * | 2011-06-30 | 2011-11-02 | 四川虹视显示技术有限公司 | Organic light-emitting diode (OLED) display device, package structure and package method |
CN103187533A (en) * | 2011-12-30 | 2013-07-03 | 昆山维信诺显示技术有限公司 | Organic light-emitting device and preparation method thereof |
CN102969453A (en) * | 2012-09-13 | 2013-03-13 | 昆山维信诺显示技术有限公司 | Graphical transport layer, organic light-emitting diode (OLED) device containing graphical transport layer and preparation method |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104409659A (en) * | 2014-12-18 | 2015-03-11 | 上海天马有机发光显示技术有限公司 | Organic light emitting diode and manufacturing method thereof |
CN105633121B (en) * | 2016-01-05 | 2019-03-12 | 京东方科技集团股份有限公司 | A kind of electroluminescence display panel, its production method and display device |
CN105633121A (en) * | 2016-01-05 | 2016-06-01 | 京东方科技集团股份有限公司 | Electroluminescent display panel, manufacturing method therefor, and display apparatus |
CN105607338A (en) * | 2016-03-24 | 2016-05-25 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
WO2017161894A1 (en) * | 2016-03-24 | 2017-09-28 | Boe Technology Group Co., Ltd. | Display substrate, manufacturing method thereof, and display apparatus |
CN105607338B (en) * | 2016-03-24 | 2018-12-21 | 京东方科技集团股份有限公司 | Display base plate and its manufacturing method and display device |
CN105810716A (en) * | 2016-04-01 | 2016-07-27 | 友达光电股份有限公司 | Flexible display device and fabrication method thereof |
CN106910841A (en) * | 2017-03-31 | 2017-06-30 | 昆山国显光电有限公司 | Array base palte and its manufacture method and OLED |
CN108022961A (en) * | 2017-11-09 | 2018-05-11 | 上海天马有机发光显示技术有限公司 | Organic electroluminescence display panel and display device |
CN109244116A (en) * | 2018-09-27 | 2019-01-18 | 上海天马微电子有限公司 | Display panel and display device |
WO2020063158A1 (en) * | 2018-09-28 | 2020-04-02 | 深圳光峰科技股份有限公司 | Led display screen |
CN109445164A (en) * | 2018-09-30 | 2019-03-08 | 武汉天马微电子有限公司 | Display panel and display device |
CN109300961A (en) * | 2018-10-15 | 2019-02-01 | 合肥鑫晟光电科技有限公司 | Oled display substrate and preparation method thereof, display device |
CN110246876B (en) * | 2019-06-03 | 2021-07-06 | 深圳市华星光电半导体显示技术有限公司 | Light-emitting layer structure and display device |
CN110246876A (en) * | 2019-06-03 | 2019-09-17 | 深圳市华星光电半导体显示技术有限公司 | A kind of luminous layer structure and display device |
WO2020244072A1 (en) * | 2019-06-03 | 2020-12-10 | 深圳市华星光电半导体显示技术有限公司 | Luminescent layer structure and display device |
US11139447B2 (en) | 2019-06-03 | 2021-10-05 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Light emitting layer structure and display device |
CN110137237A (en) * | 2019-06-06 | 2019-08-16 | 京东方科技集团股份有限公司 | Peep-proof device and display device |
WO2020244289A1 (en) * | 2019-06-06 | 2020-12-10 | 京东方科技集团股份有限公司 | Anti-spying display panel and anti-spying display device |
CN110444689A (en) * | 2019-08-19 | 2019-11-12 | 京东方科技集团股份有限公司 | A kind of display panel and display device |
CN110444689B (en) * | 2019-08-19 | 2021-11-16 | 京东方科技集团股份有限公司 | Display panel and display device |
CN110620136A (en) * | 2019-10-30 | 2019-12-27 | 京东方科技集团股份有限公司 | Display substrate and display panel comprising same |
WO2021128605A1 (en) * | 2019-12-25 | 2021-07-01 | 武汉华星光电半导体显示技术有限公司 | Color filter structure and oled display panel |
CN111162104A (en) * | 2019-12-25 | 2020-05-15 | 武汉华星光电半导体显示技术有限公司 | Color filter structure and OLED display panel |
US11411053B2 (en) | 2019-12-25 | 2022-08-09 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Color filter structure doped with nanoparticle and OLED display panel |
US20220045306A1 (en) * | 2020-08-07 | 2022-02-10 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Oled display panel and electronic device |
CN113054136A (en) * | 2021-03-11 | 2021-06-29 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and display device |
CN113054136B (en) * | 2021-03-11 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Organic light emitting display panel and display device |
CN113471269A (en) * | 2021-06-30 | 2021-10-01 | 昆山国显光电有限公司 | Display panel, preparation method of display panel and display device |
CN113471269B (en) * | 2021-06-30 | 2023-09-15 | 昆山国显光电有限公司 | Display panel, preparation method of display panel and display device |
CN114545677A (en) * | 2022-02-24 | 2022-05-27 | 京东方科技集团股份有限公司 | Reflective display module and display device |
CN114545677B (en) * | 2022-02-24 | 2023-10-13 | 京东方科技集团股份有限公司 | Reflective display module and display device |
Also Published As
Publication number | Publication date |
---|---|
CN103972262B (en) | 2017-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103972262A (en) | Organic light-emitting display device and manufacture method thereof | |
CN104777659B (en) | In-cell polarizer, liquid crystal display, and method of manufacturing liquid crystal display | |
KR102013505B1 (en) | OLED Device with Optical Resonance Layer and Fabricating Method Thereof, and Display Device | |
JP6720403B2 (en) | Display panel and its polarizing plate | |
CN108957836A (en) | A kind of color membrane substrates and preparation method thereof, display device | |
CN105467650B (en) | Colored filter substrate and display panel | |
EP3505981B1 (en) | Display device and filter thereof | |
CN104157669A (en) | Organic light emitting display panel and manufacturing method and display device thereof | |
CN103869532A (en) | Liquid crystal display device | |
CN105765450A (en) | Color film substrate and preparation method thereof, OLED, display panel and display device | |
CN105589243A (en) | Touch control display panel and display device | |
US10901135B2 (en) | Display device and method of manufacturing the same | |
CN205787482U (en) | Semi-reflecting and semi-transparent liquid crystal display panel and display device comprising same | |
CN104865731A (en) | Display panel and manufacturing method thereof and display device | |
CN110780488A (en) | Display panel and display device | |
CN204289453U (en) | A kind of organic light emitting display | |
CN206594414U (en) | A kind of micro display chip for using surface plasmons as colour filter | |
WO2021196282A1 (en) | Liquid crystal display panel and manufacturing method therefor | |
US20140104550A1 (en) | Color filter substrate, liquid crystal panel, and liquid crystal display device | |
US9740040B2 (en) | Display panel, display apparatus having the same and method of manufacturing the same | |
CN103246107A (en) | Display device, colorful membrane substrate and manufacturing method thereof | |
WO2019007073A1 (en) | Array substrate and manufacturing method therefor, and reflective liquid crystal display apparatus | |
CN106959544B (en) | Backlight module, liquid crystal display and preparation process thereof | |
CN104020616B (en) | Transmitting/reflecting LCD and driving method thereof | |
CN108279522B (en) | Reflecting device, pixel unit, display device and manufacturing method thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |