CN103969518A - Vanadium oxide thermosensitive thin-film noise test method - Google Patents
Vanadium oxide thermosensitive thin-film noise test method Download PDFInfo
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- CN103969518A CN103969518A CN201410215757.2A CN201410215757A CN103969518A CN 103969518 A CN103969518 A CN 103969518A CN 201410215757 A CN201410215757 A CN 201410215757A CN 103969518 A CN103969518 A CN 103969518A
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Abstract
The invention discloses a vanadium oxide thermosensitive thin-film low-frequency weak noise test method. The method comprises the steps that a power circuit is designed in an adaptive mode; a test circuit is designed into a selective current or voltage amplifier circuit, the design is different from single current amplification or single voltage amplification, and the two amplification modes can be selected and compared according to the design; during test, high-speed collection is performed, and time domain analysis, frequency domain analysis, power density spectrum analysis, vanadium oxide noise curve fitting, curve parameter extracting, sample quality judging and the like are performed on noise; in a test environment, three shielding chambers are designed, namely vanadium oxide sample shielding, test circuit shielding and collection card and industrial personal computer shielding are performed on electromagnetism and air flow disturbance in a test environment and adopt metal structure shielding, and the electromagnetism and air flow disturbance can be shielded. The method can achieve repeated accurate tests of vanadium oxide thermosensitive thin-film low-frequency weak noise.
Description
Technical field
The present invention relates to infrared eye technical field, relate in particular to thermosensitive film noise testing.
Technical background
The electrical resistance temperature of the semiconductor thermistor such as vanadium oxide, amorphous silicon membraneous material raises and reduces, and there is the advantages such as larger temperature-coefficient of electrical resistance (TCR) and good processing compatibility, be therefore widely used in the non-refrigeration terahertz detector of micro-metering bolometer type non-refrigerated infrared detector and micro-metering bolometer type.The noise (particularly low-frequency noise) of thermosensitive material film is a key factor of restriction thermo-sensitive material device sensitivity and accuracy of detection, along with the continuous lifting that micro-metering bolometer sensitivity requires, the noise that detects and control thermosensitive material film is particularly important.The improvement of vanadium oxide film performance is realized by the change of technique or doping, have direct relation between material property and noisiness, the performance of noise reflects the quality of membraneous material.
Be a more feasible method for the measurement of noise and then the performance of reflection film, mainly pay close attention to low frequency (<100Hz) for the measurement of noise, low-frequency noise, mainly taking 1/f noise as main, is obeyed Hooge experimental formula:
, S in formula
v(f), S
i(f) be respectively noise voltage and current power spectral density; A is the constant relevant with material; V, I are the added bias voltage in two ends, unit and electric current; β is exponential factor, for β=2, the uniform unit of material; F is frequency; γ is frequency index, conventionally gets 1.These noises are very faint in the time of the logical small electric stream of film (μ A magnitude) or voltage.
The method generally adopting is now simply sample to be biased to voltage by more convenient, after enlarging instrument is amplified, analyze with spectrum analysis instrument, this mode is to use existing frequency spectrograph, is no lack of the method for testing of existence single, the shortcomings such as sampling rate is lower, and the test duration is slower.Its data are preserved trouble, and the function that adopts instrument to include with instrument analyzes, and there is no specific aim and changeability, and these all can make troubles and the accuracy deficiency of data to researchist.
summary of the invention:
The present invention is directed to the deficiency of existing noise testing technology, proposed the noise testing method for thermosensitive material film.Take into account semiconductor thermosensitive material film high temperature coefficient of resistance feature and different thermo-sensitive material preparation technology difference, and consider the technological requirement of film aftertreatment.In test sample and preparation technology's design thereof, reduce the impact of non-thermosensitive film noise on test result as far as possible, and in test sample heat sink conception targetedly, truly to reflect the noisiness of thermosensitive material film as far as possible, can carry out extraction the amplification of voltage or electric current for sample, carry out Quick Acquisition by high-speed collection card, to the data analysis collecting, wherein image data, sampling rate, the average stacking fold of power density spectrum carry out required adjustment, and the analysis result of data are preserved.When data analysis, carry out curve fitting, obtain vanadium oxide noise parameter and can directly carry out vanadium oxide sample superiority-inferiority and carry out a preliminary accuracy judgement.For the quality control of vanadium oxide thermosensitive film and optimum preparation condition thereof etc. provide reliable foundation.
In order to solve the problems of the technologies described above, this aspect has adopted following technical scheme:
A kind of vanadium oxide thermosensitive film noise testing method, is characterized in that comprising the following steps:
Step 1, selects curtage adaptation and corresponding curtage amplification module, test low-noise current amplification system ground unrest;
1.1) select current source adaptation and corresponding electric current amplification module;
1.2) by low-noise current amplification module input short circuit, select corresponding ports to gather to capture card, observe time domain waveform, progressively increase low noise amplification gain G
i, suspend after observing obvious noise signal;
1.3) sampling rate, hits are set, now sampling rate can be arranged to the maximum sample rate f of capture card
m, hits is at least the more than 20 times of sampling rate, generally can be arranged to 50;
1.4) according to step 1.3) parameter that arranges samples, according to step 1.2) in the gain G of low-noise current amplification system
imake follow-up data carry out alignment processing and obtain and obtain power spectrum density gain, and carry out multiple averaging and obtain system background noise S
ci, average time maximal value is step 1.3) in the multiple of hits and sampling rate;
1.5) select voltage source adaptation and corresponding voltage amplification module, for the system background noise S of voltage amplification module
cvtest reference 1.2) ~ 1.4) step
1.5.1) by low noise voltage amplification module input short circuit, select corresponding ports to gather to capture card, observe time domain waveform, progressively increase low noise amplification gain G
v, suspend after observing obvious noise signal;
1.5.2) sampling rate, hits are set, now sampling rate can be arranged to the maximum sample rate f of capture card
m, hits is at least the more than 20 times of sampling rate, generally can be arranged to 50;
1.5.3) according to step 1.5.2) arrange parameter sample, according to step 1.5.1) in arrange noise voltage amplify gain G
vmake follow-up data carry out alignment processing and obtain and obtain power spectrum density gain, and carry out multiple averaging and obtain system background noise S
cv, average time maximal value is step 1.5.2) in the multiple of hits and sampling rate;
Step 2, the resistance R of test sample
sample
2.1) sample is linked in circuit adaptation module, in addition DC voltage V
sample;
2.2) select electric current to amplify, regulate the enlargement factor G of current amplifier
i, by the average voltage V after being amplified after gathering
i, by formula I
sample=V
i× G
iobtain the electric current I by sample
sample;
2.3) according to R=V
sample/ I
sampleobtain sample resistance R;
2.4) regulate DC voltage V
sample, repeat 2.1) ~ 2.3) carry out test repeatedly and test result R is averaged to obtain to R
sample;
Step 3, obtains sample institute's galvanization and corresponding alive value
3.1) according to the resistance R that tests sample in step 2
sample, when sample test, sample current is controlled at μ A magnitude, calculates the voltage of sample by V=I × R;
3.2) make respectively I change within the scope of 1 μ A ~ 15 μ A, calculate corresponding sample voltage range value;
Step 4, should institute's making alive value carry out the adjustment to direct voltage source according to the sample obtaining in step 3, and making magnitude of voltage is required sample magnitude of voltage, or uses DC current source directly to regulate;
Step 5, for the voltage system in step 4 and current system, carries out the adjustment of the gain of current amplifier and/or current amplifier, makes the voltage obtaining after amplifying meet the collection requirement of capture card;
Step 6, carries out acquisition and processing to noise
6.1) select corresponding ports to gather to capture card, suspend after observing obvious noise signal;
6.2) gain G of low noise amplifier in setting steps 5, when follow-up data is processed, gain is carried out to alignment processing, sampling rate, hits are set, if now only adopt a road to gather, be that voltage amplification or electric current amplify, sampling rate is arranged to the maximum sample rate f of capture card
mif, adopt two-way amplify simultaneously and gather, sampling rate is arranged to f
m/ 4, hits is all arranged to 50;
6.3) according to step 6.2) parameter that arranges sample and obtains current amplifier and amplify afterwards voltage signal V, and voltage signal is carried out to the V that averages
all;
6.4) by formula V
n+=V-V
allsample noise voltage V after being amplified
n+;
6.5) by formula I=V
n+* G
iobtain the actual sample noise current that sample passes through, G is the gain of current amplifier or voltage amplifier;
6.6) by formula V
n=I*R obtains the noise V that actual sample produces
n;
6.7) to V
ncarry out power spectrum density variation and on average obtain noise power spectral density S 50 times
n(f);
Step 7, to the noise power spectral density data processing and the analysis that obtain
7.1) the power spectrum density formula of noise per sample
or
carry out curve fitting, obtain the value of following parameters: A, H, beta, gamma or B, H, beta, gamma;
7.2) to step 7.1) in the parameter A of gained, H, beta, gamma or B, H, beta, gamma Analysis and Screening sample.
Step 8, is filed and is preserved by the timing waveform to sample and data, power spectrum density waveform and data thereof, curve curve and parameter thereof;
Step 9, takes from own desirable value for other voltage and current scopes of obtaining in step 3 and carries out same treatment according to step 4 ~ step 8.
The faint noise measuring system of film low frequency comprises adapter circuit, amplifying circuit, Interface design and noise processed.Electric signal transmission in corresponding whole system adopts concentric cable (BNC) to carry out, can shield electromagnetic interference.Wherein adapter circuit is voltage source or two kinds of different selections of current source of doing according to drawing of the electrode of film sample, and two kinds of mode principles are similar, but can contrast, and analyzes from different perspectives the state of noise.The different choice of the power supply of adapter circuit, collection to follow-up noise is different, corresponding resistors match also has difference, voltage source adopts the use of combining of positive-negative power, resistance in adapter circuit need to be mated with the size of test sample resistance and positive-negative power, while adopting current source, the build-out resistor in circuit is that series connection is used.The selection of two kinds of different power supplys and adapter circuit, need the amplification module of rear end to have two kinds of corresponding designs, the noise obtaining for voltage source is voltage, carry out the amplification of voltage, and the noise that corresponding current source obtains is electric current, need to carry out the amplification of electric current, and finally be converted into voltage, ensure that follow-up Noise Acquisition is consistent.Acquisition module is to utilize to have the capture card of high-speed sampling rate, and the noise after amplifying is gathered, and is converted to that digital signal is analyzed and the preservation of result.
Because the present invention adopts above technical scheme, so possess following beneficial effect:
1, there are electric current and two kinds of modes of voltage subtraction to select for the extraction of vanadium oxide sample noise, have a comparison and verification the verifying results;
2, use high-speed data acquisition card to gather, can set the highest acquisition rate of capture card used, make test there is rapidity and accuracy;
3, image data, sampling rate, the average stacking fold of power density spectrum are independently adjusted;
4, save data is convenient, can directly data be preserved and be transferred;
5, the present invention is owing to adopting the shielding of shielding, test circuit of vanadium oxide sample and the design of three layers of screened room of shielding including capture card and industrial computer, and three layers of shielding are all to use metal construction shielding, can shield the disturbance of electromagnetism and air-flow.
Brief description of the drawings
Fig. 1: the system chart of existing vanadium oxide thermosensitive film noise testing method
Fig. 2: vanadium oxide thermosensitive film noise measuring system block diagram of the present invention
Fig. 3: test process schematic diagram of the present invention
Fig. 4: circuit adaptation module schematic diagram of the present invention
Fig. 5: the noise power spectral density figure that the present invention surveys
Fig. 6: testing system device module map of the present invention.
Embodiment
A kind of faint noise testing method of vanadium oxide film low frequency, the method comprises: the adaptive design of power circuit; In test circuit, adopt selectable curtage Design of Amplification Circuit, this design distinguished in single carry out electric current or single voltage amplification, the design can select and contrast each other two kinds of amplification modes; High speed acquisition noise is carried out to the analyses such as time domain and frequency domain, power density spectrum, the matching of vanadium oxide noise curve and parameter of curve are extracted, the good and bad judgement of sample when test; In test environment, the shielding of shielding, test circuit of vanadium oxide sample and the design of three layers of screened room of shielding including capture card and industrial computer are carried out for electromagnetism and flow perturbation, three layers of shielding are all to use metal construction shielding, can shield the disturbance of electromagnetism and air-flow.The method of this invention can realize the accurate test that repeats of vanadium oxide thermosensitive film low-frequency noise.
Referring to accompanying drawing 2, test macro of the present invention comprises: electromagnetic screen, adapter circuit, amplification system and Data Control collection and Treatment Analysis system, wherein, electromagnetic screen have the first order shielding of shielding sample, containing sample and shielding thereof interior and including the second level shielding of adapter circuit, amplification system and the third level shielding including the first two shielding and capture card and industrial computer; Adapter circuit is to comprise power adaptation and the adaptation module that need to obtain electric current or voltage, has optional one and select two test simultaneously; Amplification system realizes carries out different classes of amplification to the voltage and current signal obtaining, and output is all voltage signal, can directly gather for subsequent acquisition card; After data acquisition collection, carry out time-domain and frequency-domain and curve, obtain the psophometer noise parameter of vanadium oxide, and then the quality of judgement sample.Interface between all modules all selects concentric cable (BNC) to connect, the minimum that fully guarantee environment is introduced.
As shown in Figure 3, vanadium oxide film noise testing idiographic flow is as follows for method of testing implementation step of the present invention:
Step 1, selects curtage adaptation and corresponding curtage amplification module, test macro ground unrest;
1.1) voltage adaptation module and amplification module are all two kinds of selectable modules, can first select current source adaptation and corresponding electric current amplification module;
1.2) by low-noise current amplification system input short circuit, select corresponding ports to gather to controlling capture card, observe time domain waveform, progressively increase low noise amplification system-gain G
i, suspend after observing obvious noise signal;
1.3) setting steps 1.2) in the gain G of low noise amplifier
i, when follow-up data is processed, gain is carried out to alignment processing, sampling rate, hits are set, now sampling rate can be arranged to the maximum sample rate f of capture card
m, hits is at least the more than 20 times of sampling rate, is typically provided to 50;
1.4) according to step 1.3) parameter that arranges samples and obtains power spectrum density, and carry out multiple averaging and obtain system background noise S
ci, average time maximal value is step 1.3) in the multiple of hits and sampling rate;
1.5) select voltage source adaptation and corresponding voltage amplification module, for the system background noise S of voltage amplification module
cvtest reference 1.2) ~ 1.4) step.
Step 2, the resistance R of test sample
sample
2.1) sample is linked in adaptation module, in addition DC voltage V
sample;
2.2) select electric current to amplify, regulate the enlargement factor G of current amplifier
i, by the average voltage V after can being amplified after gathering
i, by formula I
sample=V
i× G
iobtain the electric current I by sample
sample;
2.3) according to R=V
sample/ I
samplecan obtain sample resistance R;
2.4) regulate DC voltage V
sample, repeat 2.1) ~ 2.3) carry out test repeatedly and test result R is averaged to obtain to R
sample.
Step 3, obtains sample institute's galvanization and corresponding alive value
3.1) according to the resistance R that tests sample in step 2
sample, when sample test, sample current is controlled at μ A magnitude, calculates the voltage of sample by V=I × R;
3.2) make respectively I change within the scope of 1 μ A ~ 15 μ A, calculate corresponding sample voltage range value;
Step 4, should institute's making alive value carry out the adjustment to direct voltage source according to the sample obtaining in step 3, and making magnitude of voltage is required sample magnitude of voltage, or uses DC current source directly to regulate;
Step 5, for the voltage system in step 4 and current system, carries out the adjustment of the gain of current amplifier and/or current amplifier, makes the voltage obtaining after amplifying meet the collection requirement of capture card;
Step 6, carries out acquisition and processing to noise;
6.1) select capture card to select corresponding ports to gather, suspend after observing obvious noise signal;
6.2) gain G of low noise amplifier in step 5 is carried out to correspondence when data processing and convert, sampling rate, hits are set, if now only adopt a road to gather, i.e. voltage amplification or electric current amplify, and sampling rate can be arranged to the maximum sample rate f of capture card
mif, adopt two-way amplify simultaneously and gather, sampling rate can be arranged to f
m/ 4, hits is all arranged to 50;
6.3) according to step 6.2) parameter that arranges sample and obtains current amplifier and amplify afterwards voltage signal V, and voltage signal is carried out to the V that averages
all;
6.4) by formula V
n+=V-V
allsample noise voltage V after being amplified
n+;
6.5) by formula I=V
n+* G
iobtain the actual sample noise current that sample passes through, G is the gain of current amplifier or voltage amplifier;
6.6) by formula V
n=I*R obtains the noise V that actual sample produces
n;
6.7) to V
ncarry out power spectrum density variation and on average obtain noise power spectral density S 50 times
n(f);
Step 7, to the noise power spectral density data processing and the analysis that obtain
7.1) the power spectrum density formula of noise per sample
or
carry out curve fitting, obtain the value of following parameters: A, H, beta, gamma or B, H, beta, gamma;
7.2) to step 7.1) in the parameter A of gained, H, beta, gamma or B, H, beta, gamma Analysis and Screening sample, and carry out the research of sample noise and reliability;
Step 8, the timing waveform to sample and data thereof, power spectrum density waveform and data thereof, curve curve and parameter thereof are filed and preserve;
Step 9, takes from own desirable value for other voltage and current scopes of obtaining in step 3 and carries out same treatment according to step 4 ~ step 8.
The invention is not restricted to previous embodiment, do not depart from whole technical scope of the present invention, can carry out various amendments and change.
Claims (1)
1. a vanadium oxide thermosensitive film noise testing method, is characterized in that comprising the following steps:
Step 1, selects curtage adaptation and corresponding curtage amplification module, test low-noise current amplification system ground unrest;
1.1) select current source adaptation and corresponding electric current amplification module;
1.2) by low-noise current amplification system input short circuit, select corresponding ports to gather to capture card, observe time domain waveform, progressively increase low noise amplification system-gain G
i, suspend after observing obvious noise signal;
1.3) sampling rate, hits are set, now sampling rate can be arranged to the maximum sample rate f of capture card
m, hits is at least the more than 20 times of sampling rate, is typically provided to 50;
1.4) according to step 1.3) parameter that arranges samples, according to step 1.2) in the gain G of low-noise current amplification system
imake follow-up data carry out alignment processing and obtain and obtain power spectrum density gain, and carry out multiple averaging and obtain system background noise S
ci, average time maximal value is step 1.3) in the multiple of hits and sampling rate;
1.5) select voltage source adaptation and corresponding voltage amplification module, for the system background noise S of voltage amplification module
cvtest reference 1.2) ~ 1.4) step;
Step 2, the resistance R of test sample
sample
2.1) sample is linked in circuit adaptation module, in addition DC voltage V
sample;
2.2) select electric current to amplify, regulate the enlargement factor G of current amplifier
i, by the average voltage V after being amplified after gathering
i, by formula I
sample=V
i× G
iobtain the electric current I by sample
sample;
2.3) according to R=V
sample/ I
sampleobtain sample resistance R;
2.4) regulate DC voltage V
sample, repeat 2.1) ~ 2.3) carry out test repeatedly and test result R is averaged to obtain to R
sample;
Step 3, obtains sample institute's galvanization and corresponding alive value
3.1) according to the resistance R that tests sample in step 2
sample, when sample test, sample current is controlled at μ A magnitude, calculates the voltage of sample by V=I × R;
3.2) I is changed within the scope of 1 μ A ~ 15 μ A, calculate corresponding sample voltage range value;
Step 4, should institute's making alive value carry out the adjustment to direct voltage source according to the sample obtaining in step 3, and making magnitude of voltage is required sample magnitude of voltage, or uses DC current source directly to regulate;
Step 5, for the voltage system in step 4 and current system, carries out the adjustment of the gain of current amplifier and/or current amplifier, makes the voltage obtaining after amplifying meet the collection requirement of capture card;
Step 6, carries out acquisition and processing to noise
6.1) select corresponding ports to gather to capture card, suspend after observing obvious noise signal;
6.2) gain G of low noise amplifier in setting steps 5, when follow-up data is processed, gain is carried out to alignment processing, sampling rate, hits are set, if now only adopt a road to gather, be that voltage amplification or electric current amplify, sampling rate is arranged to the maximum sample rate f of capture card
mif, adopt two-way amplify simultaneously and gather, sampling rate is arranged to f
m/ 4, hits is all arranged to 50;
6.3) according to step 6.2) parameter that arranges sample and obtains current amplifier and amplify afterwards voltage signal V, and voltage signal is carried out to the V that averages
all;
6.4) by formula V
n+=V-V
allsample noise voltage V after being amplified
n+;
6.5) by formula I=V
n+* G
iobtain the actual sample noise current that sample passes through, G is the gain of current amplifier or voltage amplifier;
6.6) by formula V
n=I*R obtains the noise V that actual sample produces
n;
6.7) to V
ncarry out power spectrum density variation and on average obtain noise power spectral density S 50 times
n(f);
Step 7, to the noise power spectral density data processing and the analysis that obtain;
7.1) the power spectrum density formula of noise per sample
or
carry out curve fitting, obtain the value of following parameters: A, H, beta, gamma or B, H, beta, gamma;
7.2) to step 7.1) in the parameter A of gained, H, beta, gamma or B, H, beta, gamma Analysis and Screening sample.
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| CN107179451A (en) * | 2017-05-15 | 2017-09-19 | 深圳市量为科技有限公司 | Integrated low frequency noise measurement device |
| CN108981934A (en) * | 2018-06-29 | 2018-12-11 | 北京控制工程研究所 | A kind of thermosensitive resistance type infrared detector noise test macro and method |
| CN111198347A (en) * | 2020-01-08 | 2020-05-26 | 杭州电子科技大学 | Passive noise testing method for magnetic sensor |
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| CN107179451A (en) * | 2017-05-15 | 2017-09-19 | 深圳市量为科技有限公司 | Integrated low frequency noise measurement device |
| CN108981934A (en) * | 2018-06-29 | 2018-12-11 | 北京控制工程研究所 | A kind of thermosensitive resistance type infrared detector noise test macro and method |
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