CN103955120A - Developing solution for semiconductor integrated circuit - Google Patents
Developing solution for semiconductor integrated circuit Download PDFInfo
- Publication number
- CN103955120A CN103955120A CN201410153319.8A CN201410153319A CN103955120A CN 103955120 A CN103955120 A CN 103955120A CN 201410153319 A CN201410153319 A CN 201410153319A CN 103955120 A CN103955120 A CN 103955120A
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- semiconductor integrated
- developer solution
- sic
- developing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a developing solution for a semiconductor integrated circuit. The developing solution comprises the following components: organic alkali, a polyether type nonionic surfactant and ultrapure water. According to the mode, the developing solution for the semiconductor integrated circuit has the advantages of low production cost, good developing performance, low metal ion content, wide application range and the like, and can be widely applied to a photolithography technique in a process of manufacturing the semiconductor integrated circuit, and few developing residues, smooth graph, clear and neat graph edge, and no graph collapse are achieved after the developing solution is used for developing.
Description
Technical field
The present invention relates to a kind of developer solution, particularly relate to a kind of SIC (semiconductor integrated circuit) developer solution.
Background technology
SIC (semiconductor integrated circuit) is by passive elements such as the active components such as transistor, diode and resistor, capacitors, according to certain circuit interconnects, " integrated " on a block semiconductor single-chip, thereby complete specific circuit or systemic-function.In the process of SIC (semiconductor integrated circuit), photoetching technique is one of middle crucial technology.Photoetching technique is to utilize optics-chemical principle and chemical, physical etchings method, and circuitous pattern is delivered on single-crystal surface or dielectric layer, forms the technology of effective graphical window or functional graphic.Along with the development of semiconductor technology, photoetching technique is transmitted the dimensional threshold of figure and has been dwindled 2～3 orders of magnitude (from grade to submicron order), from conventional optical technology, has developed into the new technologies such as applying electronic bundle, X ray, ion microbeam, laser; Use wavelength from 4000 dusts, to expand to 0.1 dust order of magnitude scope.Photoetching technique has become a kind of Micrometer-Nanometer Processing Technology of precision.
Developer solution used in photoetching process is alkaline-based developer substantially, and alkaline-based developer has had good developing performance to photoresist.People utilize photoresist in the dissolubility difference of developer solution, to develop before and after exposure, and photoresist can be according to exposure or the unexposed developer solution that is optionally dissolved in, thus the figure form needing.In order to obtain good figure, need to carry out high-precision development to photoresist, therefore the developability of developer solution is proposed to higher requirement.
In order to improve the dissolubility of developer solution to the solvable district of photoresist, improve the developability of developer solution, conventionally in developer solution, add and can improve the reagent of developer solution to the wetting state of photoresist, make the solvable district of photoresist after exposing there is good dissolubility.But the interpolation of now general reagent can make developer solution to the usually also corresponding raising of the dissolubility in the insoluble district of photoresist, thereby cause the surface in the soluble district of photoresist and edge to be also easily dissolved by the developing, cause litho pattern distortion, thereby affect the developability of developer solution.
Summary of the invention
The technical matters that the present invention mainly solves is to provide a kind of SIC (semiconductor integrated circuit) developer solution, and this developer solution has good development effect.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of SIC (semiconductor integrated circuit) developer solution is provided, and the component that described developer solution comprises has organic base, polyether nonionic surfactant and ultrapure water.
In a preferred embodiment of the present invention, described organic base is Tetramethylammonium hydroxide or tetraethyl ammonium hydroxide.
In a preferred embodiment of the present invention, described polyether nonionic surfactant is APES or alkyl phenol polyethenoxy ether.
In a preferred embodiment of the present invention, described developer solution component is: by percentage to the quality, and organic base 0.01-14%, polyether nonionic surfactant 0.01-7%, ultrapure water surplus.
In a preferred embodiment of the present invention, described developer solution component is: by percentage to the quality, and organic base 0.1-10%, polyether nonionic surfactant 0.05-5%, ultrapure water surplus.
In a preferred embodiment of the present invention, described developer solution component is: by percentage to the quality, and organic base 4.7%, polyether nonionic surfactant 0.3%, ultrapure water 95%.
The invention has the beneficial effects as follows: SIC (semiconductor integrated circuit) developer solution of the present invention, described developer solution has the advantages such as production cost is low, developing performance is good, metal ion content is low, applied widely, can be widely used in the photoetching process of SIC (semiconductor integrated circuit) manufacture process, with developing after this developing liquid developing, residue is few, figure is smooth, pattern edge clear neat, without figure, cave in.
Embodiment
Below the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only a part of embodiment of the present invention, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making all other embodiment that obtain under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment mono-:
The embodiment of the present invention comprises: a kind of SIC (semiconductor integrated circuit) developer solution, and described developer solution component is: by percentage to the quality, Tetramethylammonium hydroxide 4.7%, NPE 0.3%, ultrapure water 95%.
Embodiment bis-:
The embodiment of the present invention comprises: a kind of SIC (semiconductor integrated circuit) developer solution, and described developer solution component is: by percentage to the quality, tetraethyl ammonium hydroxide 3%, NPE 1%, ultrapure water 96%.
Embodiment tri-:
The embodiment of the present invention comprises: a kind of SIC (semiconductor integrated circuit) developer solution, and described developer solution component is: by percentage to the quality, Tetramethylammonium hydroxide 7%, nonyl phenol poly-oxypropylene ether 2%, ultrapure water 91%.
The SIC (semiconductor integrated circuit) developer solution that the present invention discloses, there is the advantages such as production cost is low, developing performance is good, metal ion content is low, applied widely, can be widely used in the photoetching process of SIC (semiconductor integrated circuit) manufacture process, with developing after this developing liquid developing, residue is few, figure is smooth, pattern edge clear neat, without figure, cave in.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes description of the present invention to do; or be directly or indirectly used in other relevant technical field, be all in like manner included in scope of patent protection of the present invention.
Claims (6)
1. a SIC (semiconductor integrated circuit) developer solution, is characterized in that, the component that described developer solution comprises has organic base, polyether nonionic surfactant and ultrapure water.
2. SIC (semiconductor integrated circuit) developer solution according to claim 1, is characterized in that, described organic base is Tetramethylammonium hydroxide or tetraethyl ammonium hydroxide.
3. SIC (semiconductor integrated circuit) developer solution according to claim 1, is characterized in that, described polyether nonionic surfactant is APES or alkyl phenol polyethenoxy ether.
4. SIC (semiconductor integrated circuit) developer solution according to claim 1, is characterized in that, described developer solution component is: by percentage to the quality, and organic base 0.01-14%, polyether nonionic surfactant 0.01-7%, ultrapure water surplus.
5. SIC (semiconductor integrated circuit) developer solution according to claim 4, is characterized in that, described developer solution component is: by percentage to the quality, and organic base 0.1-10%, polyether nonionic surfactant 0.05-5%, ultrapure water surplus.
6. SIC (semiconductor integrated circuit) developer solution according to claim 5, is characterized in that, described developer solution component is: by percentage to the quality, and organic base 4.7%, polyether nonionic surfactant 0.3%, ultrapure water 95%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153319.8A CN103955120A (en) | 2014-04-17 | 2014-04-17 | Developing solution for semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410153319.8A CN103955120A (en) | 2014-04-17 | 2014-04-17 | Developing solution for semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103955120A true CN103955120A (en) | 2014-07-30 |
Family
ID=51332406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410153319.8A Pending CN103955120A (en) | 2014-04-17 | 2014-04-17 | Developing solution for semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103955120A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093862A (en) * | 2015-09-25 | 2015-11-25 | 富士胶片电子材料（苏州）有限公司 | Surface active agent and developing solution used for color filter negative photoresist |
-
2014
- 2014-04-17 CN CN201410153319.8A patent/CN103955120A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093862A (en) * | 2015-09-25 | 2015-11-25 | 富士胶片电子材料（苏州）有限公司 | Surface active agent and developing solution used for color filter negative photoresist |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105293934B (en) | Glass processing method, glass etching liquid and glass substrate | |
| CN102122113A (en) | Photoetching method | |
| CN101859065B (en) | Method to mitigate resist pattern critical dimension variation in double-exposure process | |
| JP5575318B1 (en) | Resist stripper | |
| CN103197501B (en) | A kind of array base palte and preparation method thereof and display device | |
| CN102841499A (en) | Phase-shift photomask fabrication method | |
| CN104698773A (en) | Alignment mark structure for photoetching and manufacturing method thereof | |
| CN103149792A (en) | Optical proximity correction method | |
| CN105589304A (en) | Developing liquid for photoresist as well as preparation method and application thereof | |
| CN102830588A (en) | Method for fabricating phase-shift photomask | |
| JP2016180828A (en) | Resist removal liquid | |
| CN102944983A (en) | Method for improving key dimension measurement of pattern to be measured | |
| TWI676606B (en) | Glass processing method, glass etching solution, and glass substrate | |
| CN101135849B (en) | Resistdeckfilm ausbildendes material, ausbildungsverfahren fur resiststruktur, und elektronische vorrichtung und verfahren zum herstellen derselben | |
| CN103955120A (en) | Developing solution for semiconductor integrated circuit | |
| CN105655289A (en) | Array substrate, manufacturing method thereof and display device | |
| CN111316398A (en) | Patterning directly on amorphous silicon hard mask | |
| US10002827B2 (en) | Method for selective re-routing of selected areas in a target layer and in adjacent interconnecting layers of an IC device | |
| CN105161454A (en) | Array substrate and manufacturing method thereof, display apparatus | |
| KR101993360B1 (en) | Phto lithographic rinse solution | |
| CN103389616B (en) | The SiGe device making method of emitter-window dimensional homogeneity can be improved | |
| JP5644290B2 (en) | Photomask manufacturing method | |
| CN104914663A (en) | Photomask production method | |
| JP6488595B2 (en) | Electron beam exposure mask and method of manufacturing electron beam exposure mask | |
| CN104471487B (en) | For manufacturing IC apparatus, Optical devices, micromechanics and the composition of mechanical precision apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140730 |
|
| RJ01 | Rejection of invention patent application after publication |