CN103955111B - 光掩模用基板组和光掩模组及显示装置的制造方法 - Google Patents

光掩模用基板组和光掩模组及显示装置的制造方法 Download PDF

Info

Publication number
CN103955111B
CN103955111B CN201410219079.7A CN201410219079A CN103955111B CN 103955111 B CN103955111 B CN 103955111B CN 201410219079 A CN201410219079 A CN 201410219079A CN 103955111 B CN103955111 B CN 103955111B
Authority
CN
China
Prior art keywords
photomask
pattern
transfer
base board
optical mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410219079.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN103955111A (zh
Inventor
土屋雅誉
池边寿美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of CN103955111A publication Critical patent/CN103955111A/zh
Application granted granted Critical
Publication of CN103955111B publication Critical patent/CN103955111B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Optical Filters (AREA)
CN201410219079.7A 2011-04-13 2012-04-12 光掩模用基板组和光掩模组及显示装置的制造方法 Active CN103955111B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011088781 2011-04-13
JP2011-088781 2011-04-13
CN201210106982.3A CN102736397B (zh) 2011-04-13 2012-04-12 光掩模用基板和光掩模及它们的组、制造方法及转印方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201210106982.3A Division CN102736397B (zh) 2011-04-13 2012-04-12 光掩模用基板和光掩模及它们的组、制造方法及转印方法

Publications (2)

Publication Number Publication Date
CN103955111A CN103955111A (zh) 2014-07-30
CN103955111B true CN103955111B (zh) 2017-07-28

Family

ID=46992126

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210106982.3A Active CN102736397B (zh) 2011-04-13 2012-04-12 光掩模用基板和光掩模及它们的组、制造方法及转印方法
CN201410219079.7A Active CN103955111B (zh) 2011-04-13 2012-04-12 光掩模用基板组和光掩模组及显示装置的制造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201210106982.3A Active CN102736397B (zh) 2011-04-13 2012-04-12 光掩模用基板和光掩模及它们的组、制造方法及转印方法

Country Status (4)

Country Link
JP (1) JP5937873B2 (ko)
KR (2) KR101319800B1 (ko)
CN (2) CN102736397B (ko)
TW (1) TWI461753B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI668131B (zh) * 2018-07-17 2019-08-11 沈岳正 Positive and negative dot mixed printing method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203160A (ja) * 2000-12-11 2001-07-27 Sony Corp 半導体装置の製造方法
CN1862376A (zh) * 2005-02-25 2006-11-15 Hoya株式会社 掩模坯料及其透明基片的制造方法,曝光掩模的制造方法
CN101006021A (zh) * 2005-06-17 2007-07-25 信越化学工业株式会社 用于光掩模的大型玻璃基板及其制造方法、计算机可读记录介质以及母玻璃曝光方法
JP2009037203A (ja) * 2007-07-12 2009-02-19 Hoya Corp パターン形成方法、薄膜トランジスタ基板の製造方法及び液晶表示装置の製造方法、並びにフォトマスク
JP2010078769A (ja) * 2008-09-25 2010-04-08 Shin-Etsu Chemical Co Ltd フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3627805B2 (ja) * 2001-04-20 2005-03-09 信越化学工業株式会社 フォトマスク用ガラス基板及びその製造方法
JP4340859B2 (ja) 2003-07-25 2009-10-07 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
TWI329779B (en) * 2003-07-25 2010-09-01 Shinetsu Chemical Co Photomask blank substrate, photomask blank and photomask
TW200540565A (en) * 2004-06-08 2005-12-16 Sumitomo Chemical Co Photosensitive resin composition
DE102005046135B4 (de) * 2004-09-29 2017-04-13 Hoya Corp. Substrat für Maskenrohling, Maskenrohling, Belichtungsmaske und Herstellungsverfahren für Maskenrohlingssubstrat
JP4803576B2 (ja) * 2004-09-29 2011-10-26 Ｈｏｙａ株式会社 マスクブランク用基板、マスクブランク、露光用マスク、半導体デバイスの製造方法、及びマスクブランク用基板の製造方法
US7608542B2 (en) * 2005-06-17 2009-10-27 Shin-Etsu Chemical Co., Ltd. Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method
JP5335351B2 (ja) * 2008-10-01 2013-11-06 Ｈｏｙａ株式会社 マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法
JP5331638B2 (ja) * 2008-11-04 2013-10-30 Ｈｏｙａ株式会社 表示装置製造用フォトマスクの製造方法及び描画装置
KR101680866B1 (ko) * 2008-11-26 2016-11-29 호야 가부시키가이샤 마스크블랭크용 기판
JP4853684B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
KR101270659B1 (ko) * 2009-05-27 2013-06-03 주식회사 에스앤에스텍 블랭크 마스크 기판, 블랭크 마스크 및 그의 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203160A (ja) * 2000-12-11 2001-07-27 Sony Corp 半導体装置の製造方法
CN1862376A (zh) * 2005-02-25 2006-11-15 Hoya株式会社 掩模坯料及其透明基片的制造方法,曝光掩模的制造方法
CN101006021A (zh) * 2005-06-17 2007-07-25 信越化学工业株式会社 用于光掩模的大型玻璃基板及其制造方法、计算机可读记录介质以及母玻璃曝光方法
JP2009037203A (ja) * 2007-07-12 2009-02-19 Hoya Corp パターン形成方法、薄膜トランジスタ基板の製造方法及び液晶表示装置の製造方法、並びにフォトマスク
JP2010078769A (ja) * 2008-09-25 2010-04-08 Shin-Etsu Chemical Co Ltd フォトマスクブランクスの選択方法及び製造方法並びにフォトマスクの製造方法

Also Published As

Publication number Publication date
JP5937873B2 (ja) 2016-06-22
CN103955111A (zh) 2014-07-30
CN102736397A (zh) 2012-10-17
TW201303384A (zh) 2013-01-16
TWI461753B (zh) 2014-11-21
KR101319800B1 (ko) 2013-10-17
KR101805953B1 (ko) 2017-12-06
CN102736397B (zh) 2015-04-01
KR20130103470A (ko) 2013-09-23
JP2012230368A (ja) 2012-11-22
KR20120116875A (ko) 2012-10-23

Similar Documents

Publication Publication Date Title
TWI409579B (zh) 光罩之製造方法、描繪裝置、光罩之檢查方法及光罩之檢查裝置
KR101024477B1 (ko) 마스크 블랭크 및 포토마스크
CN103513505A (zh) 光掩模及其制造方法、转印方法及平板显示器的制造方法
CN101359168B (zh) 灰色调掩模的制造方法以及灰色调掩模
TW586149B (en) Graytone mask producing method
CN104614931A (zh) 掩模板及制造彩膜基板的方法和彩膜基板
KR101108562B1 (ko) 포토마스크 블랭크용 기판의 제조방법
JP4697960B2 (ja) パターンニング方法とこれに用いられる近接露光用の原版マスク
CN102141726B (zh) 光掩模的制造方法、光掩模以及显示装置的制造方法
JP2008176131A (ja) 液晶表示装置及びその製造方法
KR100803634B1 (ko) 포토마스크 블랭크용 기판의 선정방법
CN103955111B (zh) 光掩模用基板组和光掩模组及显示装置的制造方法
KR20100036190A (ko) 포토마스크의 제조 방법 및 패턴 전사 방법
CN104040428B (zh) 相移掩模及使用该相移掩模的抗蚀图案形成方法
CN102736402B (zh) 光掩模用基板、光掩模、光掩模制造方法及图案转印方法
CN102736398B (zh) 光掩模用基板、光掩模以及图案转印方法
US9632438B2 (en) Phase shift mask and method of forming patterns using the same
JP2000267253A (ja) 露光マスクの形成方法および液晶装置の製造方法
KR20110052516A (ko) 다계조 포토마스크의 제조 방법, 및 다계조 포토마스크
JP4591919B2 (ja) 液晶パネル用対向基板の製造方法
JPH0667405A (ja) 露光用マスク
JP2001203160A (ja) 半導体装置の製造方法
CN114415476A (zh) 标准片及其制备方法、机差校准方法
CN116830035A (zh) 相移掩模、检测元件、散焦量检测方法、焦点调整方法以及器件的制造方法
JP2014002194A (ja) 露光方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant