CN103952681B - The preparation method of the nitrogen co-doped diamond thin of a kind of lithium - Google Patents
The preparation method of the nitrogen co-doped diamond thin of a kind of lithium Download PDFInfo
- Publication number
- CN103952681B CN103952681B CN201410166621.7A CN201410166621A CN103952681B CN 103952681 B CN103952681 B CN 103952681B CN 201410166621 A CN201410166621 A CN 201410166621A CN 103952681 B CN103952681 B CN 103952681B
- Authority
- CN
- China
- Prior art keywords
- lithium
- nitrogen
- diamond thin
- substrate
- hot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses the preparation method of the nitrogen co-doped diamond thin of a kind of lithium.The suspension that one deck contains lithium source is applied at the substrate surface depositing diamond thin in advance, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing lithium source is melted by heating and makes lithium diffuse into diamond in hydrogen atmosphere; Then the nitrogen co-doped diamond thin of hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere is adopted further.This lithium nitrogen co-doped diamond film surface work function is low, and under heat effect and electric field action, easy electron emission, can be used for thermionic energy converter part and field emission display.
Description
Technical field
The present invention relates to field of photovoltaic materials, particularly a kind of preparation method that can be applicable to the nitrogen co-doped diamond thin of lithium of thermal electron emission and Flied emission.
Background technology
Diamond has very strong covalent linkage and high atoms density, it is typical atomic crystal, this makes it show distinguished extreme nature in physics and chemistry properties, has important application at high-technology fields such as machinery, aerospace, microelectronics, photoelectron, electrochemistry and biomedicines.These extreme nature also make it become ideal material and be operated in extreme heat, pressure, radiation and chemical environment medium.The resistivity of intrinsic diamond film is up to 10
10more than Ω cm, element doping is a kind of effective means improving thin diamond film conductivity, can be semi-conductor by diamond, thus greatly expanded the application of diamond thin in electron device, electrochemical sensing field by element doping by insulator transition.
In-situ doped and ion implantation doping when the doping techniques of current diamond thin mainly comprises film growth, easily causes greying and the lattice defect of diamond thin by ion implantation doping.Along with chemical vapour deposition technique development, in-situ dopedly become topmost method.Boron atomic radius is little, and energy level more shallow (0.37eV) is shallow acceptor impurities, easily obtains by boron doping the p-type diamond thin conducted electricity very well.But the diamond thin N-shaped doping with good Electronic Performance is still more difficult, current diamond thin N-shaped doping is main based on nitrogen, phosphorus doping, nitrogen energy level very dark (1.7eV), and under room temperature, Thin film conductive performance is poor; Although phosphorus doping energy level more shallow (0.6eV), the strong compensating action that in diamond thin, defect complex body causes has a strong impact on its electrical properties, and phosphorus doping Diamond Thin Film Quality prepared by chemical gaseous phase depositing process is not high.Theoretical investigation shows that the diamond surface work function of Liization is low, and gap L i atom can strengthen adamantine electric property as a kind of shallow donor's atom in a diamond.Excite institute's energy requirement an electronics to diamond conduction band to be less than 0.3eV from Li donor level, therefore Li doped atom can obtain the good N-shaped diamond thin of conductivity in a diamond.But, due to Li atom in diamond lattice during solubleness low and high temperature transfer ability high, find that Li atom becomes Li cluster by diffusion aggregation after mixing diamond, in inactive state in lattice by ion implantation doping, diffusing, doping and growth in situ doping experimentally.Theoretical investigation shows that adding atom N when Li mixes effectively can stop Li atomic diffusion (J.E.Moussa, N.Marom, N.Sai, J.R.Chelikowsky, Theoreticaldesignofashallowdonorindiamondbylithium – nitrogencodoping, Phys.Rev.Lett.108,2012,226404), atom N can reduce Li atomic migration ability and is trapped in diamond lattice, and electronics also directly enters diamond lattice from gap L i atom transport to displacement atom N.Therefore the N-shaped diamond thin with shallow donor's energy level, high electron mobility ability can be obtained by Li and N codoped.The diamond film surface work function of Li and N codoped is low, easily under heat effect and electric field action, launches electronics, can be used for thermionic energy converter part and field emission display.But there is no the preparation method of the nitrogen co-doped diamond thin of lithium in prior art.
Summary of the invention
The diffusion that the object of the invention is effectively to stop Li atom in diamond lattice by atom N and gathering, provide the preparation method of the nitrogen co-doped diamond thin of a kind of lithium.
The technical solution realizing the object of the invention is: the preparation method of the nitrogen co-doped diamond thin of a kind of lithium, the suspension that one deck contains Li source is applied at diamond film surface, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing Li source is melted by heating and makes Li diffuse into diamond; The nitrogen co-doped diamond thin of further employing hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere, specifically comprises the following steps:
Step 1, by lithium source pressed powder dissolve in organic solvent, form stable suspension liquid by supersound process; Described lithium source pressed powder is lithium nitride, lithium carbide or their mixture, and organic solvent is chloroform, hexanaphthene, hexane, toluene, dimethylbenzene or tetracol phenixin.
Step 2, the suspension liquid prepared is coated in deposits on the substrate of diamond thin in advance, put it in the sample table of hot-wire chemical gas-phase deposition system vacuum chamber after seasoning, regulate the distance between substrate and heated filament, to vacuum chamber; To be coated with or suspension liquid to be coated in and to deposit on the substrate of diamond thin by spin coating method by dripping, the diamond thin deposited in advance is intrinsic diamond film or N doping diamond thin, distance between substrate and heated filament is 3-5mm, and vacuum chamber is extracted into pressure and is less than or equal to 1 × 10
-3pa.
Step 3, pass into hydrogen, heated substrate in hydrogen atmosphere, make lithium source power become molten state, lithium atom can be diffused into diamond surface; Heat-up time is 30-90min.
Step 4, pass into CH
4/ H
2the mixed gas of/diamond, controls spacing, the CH of hot-wire temperature, heated filament and substrate
4/ H
2n/C ratio, deposition pressure and depositing time in ratio, gas, utilize hot-wire chemical gas-phase deposition method to deposit one deck N doping diamond thin at the substrate surface being coated with lithium source further, the nitrogen co-doped diamond thin of lithium can be obtained by lithium atom diffusion.Described diamond is nitrogen, ammonia or their gas mixture, and heated filament is tantalum wire or rhenium silk, and hot-wire chemical gas-phase deposition prepares the condition of the nitrogen co-doped diamond thin of lithium: deposition pressure is 20-40Torr, CH
4/ H
2gas ratio is 0.5-5%, and in mixed gas, N/C ratio is 0.2-1.0, and heated filament and sample surfaces distance are 3-5mm, and hot-wire temperature is 2200-2400 DEG C, and underlayer temperature is 750-850 DEG C, and depositing time is 0.5-8h.
After step 5, deposition terminate, close heated filament heating power supply, silicon power supply, source of the gas successively, treat substrate cool to room temperature in a vacuum chamber, open vacuum chamber and take out sample, complete the preparation of the nitrogen co-doped diamond thin of lithium.
The present invention compared with prior art, its remarkable advantage is: 1) in diamond doped, atom N is added when the present invention is mixed by Li, stop Li atom by diffuseing to form cluster, single Li is avoided to adulterate or N adulterates the unfavorable factor brought, realize Li and N codoped, the N-shaped diamond thin with shallow donor's energy level, high electron mobility ability can be prepared; 2) the present invention is by multi-layer diamond membrane structure, is conducive to effective, the Uniform Doped of Li and N; 3) the lithium nitrogen co-doped diamond film surface work function prepared of the present invention is low, easily launches electronics, can be used for thermionic energy converter part and field emission display under heat effect and electric field; 4) the present invention adopts hot-wire chemical gas-phase deposition method to prepare the nitrogen co-doped diamond thin of lithium, and technology and equipment is simple, easy.
Below in conjunction with accompanying drawing, further detailed description is done to the present invention.
Accompanying drawing explanation
Fig. 1 is the visible Raman spectrogram of the nitrogen co-doped diamond thin of lithium prepared by the embodiment of the present invention 1.
Fig. 2 is the cross-sectional scans Electronic Speculum figure of the nitrogen co-doped diamond thin of lithium prepared by the embodiment of the present invention 1.
Embodiment
The invention provides the preparation method of the nitrogen co-doped diamond thin of a kind of lithium, the suspension that one deck contains Li source is applied at the substrate surface depositing diamond thin in advance, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing Li source is melted by heating and makes Li diffuse into diamond; The nitrogen co-doped diamond thin of further employing hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere, specifically comprises the following steps:
Step 1, by lithium source pressed powder dissolve in organic solvent, form stable suspension liquid by supersound process.Concrete operations are: dissolved in organic solvent by solid lithium source power, then supersound process, and preparation has the suspension liquid of good stability.Described lithium source pressed powder is lithium nitride, lithium carbide or their mixture, and organic solvent is chloroform, hexanaphthene, hexane, toluene, dimethylbenzene or tetracol phenixin.
Step 2, the suspension liquid prepared is coated in deposit 0.5-5 μm of diamond thin substrate on, put it in the sample table of hot-wire chemical gas-phase deposition system vacuum chamber after seasoning, regulate the distance between substrate and heated filament to be 3-5mm, vacuum chamber is extracted into pressure and is less than or equal to 1 × 10
-3pa;
Step 3, pass into hydrogen, heated substrate in hydrogen atmosphere, heat-up time is 30-90min, makes lithium source power become molten state, thus makes lithium atom be diffused into diamond surface;
Step 4, pass into CH
4/ H
2the mixed gas of/diamond, controls spacing, the CH of hot-wire temperature, heated filament and substrate
4/ H
2n/C ratio, deposition pressure and depositing time in ratio, gas, utilize hot-wire chemical gas-phase deposition method to deposit one deck N doping diamond thin at the substrate surface being coated with lithium source further, the nitrogen co-doped diamond thin of lithium can be obtained by lithium atom diffusion.Design parameter is: pressure is 20-40Torr, CH
4/ H
2gas ratio is 0.5-5%, and in mixed gas, N/C ratio is 0.2-1.0, and heated filament and sample surfaces distance are 3-5mm, and hot-wire temperature is 2200-2400 DEG C, and substrate temperature is about 750-850 DEG C, and depositing time is 0.5-8h.
After step 5, deposition terminate, close heated filament heating power supply, silicon power supply, source of the gas successively, treat substrate cool to room temperature in a vacuum chamber, open vacuum chamber and take out sample.
Below in conjunction with embodiment, further detailed description is done to the present invention:
Embodiment 1:
Apply at the substrate surface depositing N doping diamond thin the suspension that one deck contains Li source, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing Li source is melted by heating and makes Li diffuse into diamond; The nitrogen co-doped diamond thin of further employing hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere, specifically comprises the following steps:
Step 1, by lithium source pressed powder dissolve in organic solvent, form stable suspension liquid by supersound process.Concrete operations are: be dissolved in by lithium nitride pressed powder in chloroform organic solvent, then supersound process, and preparation has the suspension liquid of good stability.
Step 2, the suspension liquid prepared is coated in deposit 0.5 μm of N doping diamond thin substrate on, put it in the sample table of hot-wire chemical gas-phase deposition system vacuum chamber after seasoning, regulate the distance between substrate and heated filament to be 3mm, vacuum chamber is extracted into pressure and is less than or equal to 1 × 10
-3pa;
Step 3, pass into hydrogen, heated substrate in hydrogen atmosphere, heat-up time is 30min, makes substrate surface temperature be heated to more than lithium nitride pressed powder fusing point, lithium nitride powder is become molten state, make lithium atom be diffused into diamond surface;
Step 4, pass into CH
4/ H
2/ NH
3mixed gas, control spacing, the CH of hot-wire temperature, heated filament and substrate
4/ H
2n/C ratio, deposition pressure and depositing time in ratio, gas, utilize hot-wire chemical gas-phase deposition method to deposit one deck N doping diamond thin at the substrate surface being coated with lithium source further, the nitrogen co-doped diamond thin of lithium can be obtained by lithium atom diffusion.Design parameter is: pressure is 20Torr, CH
4/ H
2gas ratio is 0.5%, and in mixed gas, N/C ratio is 0.2, and heated filament and sample surfaces distance are 3mm, and hot-wire temperature is 2200 DEG C, and substrate temperature is about 850 DEG C, and depositing time is 0.5h.
After step 5, deposition terminate, close heated filament heating power supply, silicon power supply, source of the gas successively, treat substrate cool to room temperature in a vacuum chamber, open vacuum chamber and take out sample.
Carried out analysis and characterization to the nitrogen co-doped diamond thin of lithium of preparation, Fig. 1 is the visible Raman spectrogram of the nitrogen co-doped diamond thin of lithium, at 1332cm
-1there is diamond characteristic peak in place, the nitrogen co-doped diamond thin of lithium of preparation has higher sp
3linkage content.Fig. 2 is the Cross Section Morphology figure of the nitrogen co-doped diamond thin of lithium, does not affect the growth pattern of diamond thin, still keep columnar structure to grow after lithium is nitrogen co-doped, and combines between film and substrate firmly, and growth is fine and close.
Embodiment 2:
Apply at the substrate surface depositing intrinsic diamond film the suspension that one deck contains Li source, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing Li source is melted by heating and makes Li diffuse into diamond; The nitrogen co-doped diamond thin of further employing hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere, specifically comprises the following steps:
Step 1, by lithium source pressed powder dissolve in organic solvent, form stable suspension liquid by supersound process.Concrete operations are: be dissolved in toluene organic solvent by lithium carbide pressed powder, then supersound process, and preparation has the suspension liquid of good stability.
Step 2, the suspension liquid prepared is coated in deposit 5 μm of intrinsic diamond films substrate on, put it in the sample table of hot-wire chemical gas-phase deposition system vacuum chamber after seasoning, regulate the distance between substrate and heated filament to be 5mm, vacuum chamber is extracted into pressure and is less than or equal to 1 × 10
-3pa;
Step 3, pass into hydrogen, heated substrate in hydrogen atmosphere, heat-up time is 90min, and lithium carbide powder is become molten state, makes lithium atom be diffused into diamond surface;
Step 4, pass into CH
4/ H
2/ N
2mixed gas, control spacing, the CH of hot-wire temperature, heated filament and substrate
4/ H
2n/C ratio, deposition pressure and depositing time in ratio, gas, utilize hot-wire chemical gas-phase deposition method to deposit one deck N doping diamond thin at the substrate surface being coated with lithium source further, the nitrogen co-doped diamond thin of lithium can be obtained by lithium atom diffusion.Design parameter is: pressure is 40Torr, CH
4/ H
2gas ratio is 5%, and in mixed gas, N/C ratio is 1.0, and heated filament and sample surfaces distance are 5mm, and hot-wire temperature is 2400 DEG C, and substrate temperature is about 750 DEG C, and depositing time is 8h.
After step 5, deposition terminate, close heated filament heating power supply, silicon power supply, source of the gas successively, treat substrate cool to room temperature in a vacuum chamber, open vacuum chamber and take out sample.
Through verification experimental verification, prepared the nitrogen co-doped diamond thin of lithium, after lithium is nitrogen co-doped, film still keeps columnar structure to grow, and combines firmly between substrate, and growth is fine and close.
Embodiment 3:
Apply at the substrate surface depositing N doping diamond thin the suspension that one deck contains Li source, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing Li source is melted by heating and makes Li diffuse into diamond; The nitrogen co-doped diamond thin of further employing hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere, specifically comprises the following steps:
Step 1, by lithium source pressed powder dissolve in organic solvent, form stable suspension liquid by supersound process.Concrete operations are: be dissolved in hexanaphthene organic solvent by lithium carbide and lithium nitride by the mixed pressed powder of 1:1, then supersound process, and preparation has the suspension liquid of good stability.
Step 2, the suspension liquid prepared is coated in deposit 2.5 μm of N doping diamond thins substrate on, put it in the sample table of hot-wire chemical gas-phase deposition system vacuum chamber after seasoning, regulate the distance between substrate and heated filament to be 4mm, vacuum chamber is extracted into pressure and is less than or equal to 1 × 10
-3pa;
Step 3, pass into hydrogen, heated substrate in hydrogen atmosphere, heat-up time is 60min, lithium carbide and lithium nitride is become molten state by the mixed pressed powder of 1:1, makes lithium atom be diffused into diamond surface;
Step 4, pass into CH
4/ H
2/ NH
3mixed gas, control spacing, the CH of hot-wire temperature, heated filament and substrate
4/ H
2n/C ratio, deposition pressure and depositing time in ratio, gas, utilize hot-wire chemical gas-phase deposition method to deposit one deck N doping diamond thin at the substrate surface being coated with lithium source further, the nitrogen co-doped diamond thin of lithium can be obtained by lithium atom diffusion.Design parameter is: pressure is 30Torr, CH
4/ H
2gas ratio is 2%, and in mixed gas, N/C ratio is 0.5, and heated filament and sample surfaces distance are 4mm, and hot-wire temperature is 2300 DEG C, and substrate temperature is about 800 DEG C, and depositing time is 4h.
After step 5, deposition terminate, close heated filament heating power supply, silicon power supply, source of the gas successively, treat substrate cool to room temperature in a vacuum chamber, open vacuum chamber and take out sample.
Through verification experimental verification, prepared the nitrogen co-doped diamond thin of lithium, after lithium is nitrogen co-doped, film still keeps columnar structure to grow, and combines firmly between substrate, and growth is fine and close.
Claims (5)
1. the preparation method of the nitrogen co-doped diamond thin of lithium, it is characterized in that, the suspension that one deck contains Li source is applied at the substrate surface depositing diamond thin, put it in the reaction chamber of hot-wire chemical gas-phase deposition system after to be dried, the powder containing Li source is melted by heating and makes Li diffuse in diamond; The nitrogen co-doped diamond thin of further employing hot-wire chemical gas-phase deposition method lithium deposition in nitrogen containing atmosphere, specifically comprises the following steps:
Step 1, by lithium source pressed powder dissolve in organic solvent, form stable suspension liquid by supersound process;
Step 2, the suspension liquid prepared is coated in deposits on the substrate of diamond thin in advance, put it in the sample table of hot-wire chemical gas-phase deposition system vacuum chamber after seasoning, regulate the distance between substrate and heated filament, to vacuum chamber;
Step 3, pass into hydrogen, heated substrate in hydrogen atmosphere, make lithium source power become molten state, now, lithium atom can be diffused into diamond surface;
Step 4, pass into CH
4/ H
2the gas of/diamond, controls spacing, the CH of hot-wire temperature, heated filament and substrate
4/ H
2n/C ratio, deposition pressure and depositing time in ratio, gas, utilize hot-wire chemical gas-phase deposition method to deposit one deck N doping diamond thin at the substrate surface being coated with lithium source further, the nitrogen co-doped diamond thin of lithium can be obtained by lithium atom diffusion;
After step 5, deposition terminate, close heated filament heating power supply, silicon power supply, source of the gas successively, treat substrate cool to room temperature in a vacuum chamber, open vacuum chamber and take out sample, complete the preparation of the nitrogen co-doped diamond thin of lithium.
2. the preparation method of the nitrogen co-doped diamond thin of a kind of lithium according to claim 1, it is characterized in that, in step 1, lithium source pressed powder is lithium nitride, lithium carbide or their mixture, and organic solvent is chloroform, hexanaphthene, hexane, toluene, dimethylbenzene or tetracol phenixin.
3. the preparation method of the nitrogen co-doped diamond thin of a kind of lithium according to claim 1, it is characterized in that, to be coated with or suspension liquid to be coated in and to deposit on the substrate of diamond thin by spin coating method by dripping in step 2, the diamond thin deposited in advance is intrinsic diamond film or N doping diamond thin, distance between substrate and heated filament is 3-5mm, and vacuum chamber is extracted into pressure and is less than or equal to 1 × 10
-3pa.
4. the preparation method of the nitrogen co-doped diamond thin of a kind of lithium according to claim 1, is characterized in that, in step 3, heat-up time is 30-90min.
5. the preparation method of the nitrogen co-doped diamond thin of a kind of lithium according to claim 1, it is characterized in that, in step 4, diamond is nitrogen, ammonia or their gas mixture, heated filament is tantalum wire or rhenium silk, hot-wire chemical gas-phase deposition prepares the condition of the nitrogen co-doped diamond thin of lithium: deposition pressure is 20-40Torr, CH
4/ H
2gas ratio is 0.5-5%, and in mixed gas, N/C ratio is 0.2-1.0, and heated filament and sample surfaces distance are 3-5mm, and hot-wire temperature is 2200-2400 DEG C, and underlayer temperature is 750-850 DEG C, and depositing time is 0.5-8h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410166621.7A CN103952681B (en) | 2014-04-23 | 2014-04-23 | The preparation method of the nitrogen co-doped diamond thin of a kind of lithium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410166621.7A CN103952681B (en) | 2014-04-23 | 2014-04-23 | The preparation method of the nitrogen co-doped diamond thin of a kind of lithium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103952681A CN103952681A (en) | 2014-07-30 |
| CN103952681B true CN103952681B (en) | 2016-04-20 |
Family
ID=51330024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410166621.7A Expired - Fee Related CN103952681B (en) | 2014-04-23 | 2014-04-23 | The preparation method of the nitrogen co-doped diamond thin of a kind of lithium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103952681B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113430500B (en) * | 2021-06-25 | 2022-03-08 | 杭州超然金刚石有限公司 | Semiconductor material based on diamond crystal lattice and manufacturing equipment thereof |
| CN114032578B (en) * | 2021-10-11 | 2023-07-11 | 三峡大学 | Preparation method of boron or phosphorus doped graphite phase carbon nitride film electrode |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110276A (en) * | 1997-03-05 | 2000-08-29 | Korea Advanced Institute Of Science And Technology | Method for making n-type semiconductor diamond |
| CN1692186A (en) * | 2002-12-27 | 2005-11-02 | 住友电气工业株式会社 | Low-resistance n type semiconductor diamond and process for producing the same |
| CN1708834A (en) * | 2003-10-29 | 2005-12-14 | 住友电气工业株式会社 | Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04175295A (en) * | 1990-11-07 | 1992-06-23 | Canon Inc | Production of semiconductive diamond |
| JPH04348514A (en) * | 1991-05-27 | 1992-12-03 | Fuji Electric Co Ltd | Manufacture of n-type diamond semiconductor |
| JPH1154443A (en) * | 1997-08-07 | 1999-02-26 | New Japan Radio Co Ltd | Manufacture of n-type diamond semiconductor |
| JP4345437B2 (en) * | 2003-10-29 | 2009-10-14 | 住友電気工業株式会社 | Method for producing n-type semiconductor diamond and n-type semiconductor diamond |
-
2014
- 2014-04-23 CN CN201410166621.7A patent/CN103952681B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110276A (en) * | 1997-03-05 | 2000-08-29 | Korea Advanced Institute Of Science And Technology | Method for making n-type semiconductor diamond |
| CN1692186A (en) * | 2002-12-27 | 2005-11-02 | 住友电气工业株式会社 | Low-resistance n type semiconductor diamond and process for producing the same |
| CN1708834A (en) * | 2003-10-29 | 2005-12-14 | 住友电气工业株式会社 | Process for producing n-type semiconductor diamond and n-type semiconductor diamond |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103952681A (en) | 2014-07-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101063359B1 (en) | Carbon materials, lamination product comprising the same and method for preparing the same | |
| CN103194795B (en) | A kind of method of low-cost preparation of large-size monocrystal graphene | |
| CN101717913B (en) | N-type nano-diamond film and preparation method | |
| EP1882275A1 (en) | Method for the production of photovoltaic cells | |
| CN102103953B (en) | Cold cathode field emission material epitaxially growing on silicon carbide substrate and method | |
| Wang et al. | High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal | |
| CN103952681B (en) | The preparation method of the nitrogen co-doped diamond thin of a kind of lithium | |
| CN103646789B (en) | A kind of preparation method of Graphene-platinum composite electrode material for super capacitor | |
| CN105970184A (en) | Metal nanoparticle/diamond composite film with excellent field emission performance and preparation method | |
| CN105779971A (en) | Method for depositing p-type semi-conductor zinc oxide film on atomic layer | |
| KR101578268B1 (en) | Electrode element comprising control-layer of work function | |
| CN105399099B (en) | A kind of preparation method of dopen Nano silicon materials and its application in light ultracapacitor field | |
| CN113106417A (en) | Preparation method of hexagonal boron nitride film and hexagonal boron nitride film | |
| Chen et al. | Hydrogen-free synthesis of graphene–graphitic films directly on Si substrate by plasma enhanced chemical vapor deposition | |
| CN102593282A (en) | Doping method for ZnO nanowire array | |
| Oh et al. | Large-scale, single-oriented ZnO nanostructure on h-BN films for flexible inorganic UV sensors | |
| JP6815016B2 (en) | Manufacturing method of amorphous carbon nanoparticles and amorphous carbon nanoparticles | |
| TWI404129B (en) | Method for manufacturing carbon film with semiconductor properties | |
| Wan et al. | Synthesis and characterization of high voltage electrodeposited phosphorus doped DLC films | |
| CN103613092A (en) | Preparation method of boron-doped graphene | |
| TW201027781A (en) | Method and apparatus for fabricating IB-IIIA-VIA2 compound semiconductor thin films | |
| CN102399092B (en) | Preparation method for nitrogen-doped nano-diamond thin film | |
| CN106024862A (en) | Preparation method for novel diamond film/GaN heterojunction with electrode | |
| CN103924239B (en) | A kind of preparation method of Graphene-anodised aluminium composite conducting material | |
| Yoshinaga et al. | Fabrication of silicon and carbon based wide-gap semiconductor thin films for high conversion efficiency |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 |