CN103946958B - Compositions and method for polished aluminum semiconductor substrate - Google Patents
Compositions and method for polished aluminum semiconductor substrate Download PDFInfo
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- CN103946958B CN103946958B CN201280056948.8A CN201280056948A CN103946958B CN 103946958 B CN103946958 B CN 103946958B CN 201280056948 A CN201280056948 A CN 201280056948A CN 103946958 B CN103946958 B CN 103946958B
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- acid
- polishing composition
- polishing
- aluminum
- base material
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- 239000000203 mixture Substances 0.000 title claims abstract description 182
- 238000000034 method Methods 0.000 title claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 title claims description 73
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 title description 3
- 238000005498 polishing Methods 0.000 claims abstract description 173
- -1 alkyl diphenyl ether Chemical compound 0.000 claims abstract description 83
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 76
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 52
- 238000000227 grinding Methods 0.000 claims abstract description 51
- 239000004094 surface-active agent Substances 0.000 claims abstract description 32
- 239000002245 particle Substances 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000002253 acid Substances 0.000 claims abstract description 24
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 13
- 239000000178 monomer Substances 0.000 claims description 44
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- 230000008569 process Effects 0.000 claims description 23
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
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- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 13
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- 229910052751 metal Inorganic materials 0.000 claims description 9
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- 239000000377 silicon dioxide Substances 0.000 claims description 9
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 8
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
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- 239000010936 titanium Substances 0.000 claims description 8
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- 239000004411 aluminium Substances 0.000 claims description 6
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- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 4
- BJFLSHMHTPAZHO-UHFFFAOYSA-N benzotriazole Chemical compound [CH]1C=CC=C2N=NN=C21 BJFLSHMHTPAZHO-UHFFFAOYSA-N 0.000 claims description 4
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- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical group NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims description 3
- 229910002651 NO3 Inorganic materials 0.000 claims description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
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- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 claims description 3
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims description 3
- 150000002505 iron Chemical class 0.000 claims description 3
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- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 3
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- YROXIXLRRCOBKF-UHFFFAOYSA-N sulfonylurea Chemical class OC(=N)N=S(=O)=O YROXIXLRRCOBKF-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
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- 239000010937 tungsten Substances 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
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- 238000007334 copolymerization reaction Methods 0.000 claims description 2
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- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 2
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- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- 125000003831 tetrazolyl group Chemical group 0.000 claims description 2
- 125000003368 amide group Chemical group 0.000 claims 2
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 1
- 239000005864 Sulphur Substances 0.000 claims 1
- 230000002378 acidificating effect Effects 0.000 claims 1
- 125000000129 anionic group Chemical group 0.000 claims 1
- 210000000481 breast Anatomy 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
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- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 claims 1
- 238000000197 pyrolysis Methods 0.000 claims 1
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- INARFNQOWWSXLS-UHFFFAOYSA-N 1-amino-2-methylpropane-1-sulfonic acid Chemical compound CC(C)C(N)S(O)(=O)=O INARFNQOWWSXLS-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
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- LPTWEDZIPSKWDG-UHFFFAOYSA-N benzenesulfonic acid;dodecane Chemical compound OS(=O)(=O)C1=CC=CC=C1.CCCCCCCCCCCC LPTWEDZIPSKWDG-UHFFFAOYSA-N 0.000 description 3
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- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- CMUOJBJRZUHRMU-UHFFFAOYSA-N nitrourea Chemical compound NC(=O)N[N+]([O-])=O CMUOJBJRZUHRMU-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 description 1
- 150000003016 phosphoric acids Chemical class 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920005646 polycarboxylate Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- ZTWTYVWXUKTLCP-UHFFFAOYSA-N vinylphosphonic acid Chemical compound OP(O)(=O)C=C ZTWTYVWXUKTLCP-UHFFFAOYSA-N 0.000 description 1
Abstract
The present invention provides a kind of chemical-mechanical polishing compositions, and it comprises coated alpha alumina particles, organic carboxyl acid and water.The present invention also provides for a kind of chemical-mechanical polishing compositions, it is included in polishing composition has the grinding agent of negative zeta potential, organic carboxyl acid, at least one alkyl diphenyl ether disulfonate surfactant and water, and wherein this polishing composition comprises heterocyclic compound the most further.This grinding agent is colloid-stabilised in polishing composition.The present invention further provides the method using foregoing polishing compositions polishing base material.
Description
Background technology
Integrated circuit is formed at the active device group among or on base material such as silicon wafer by millions of
Become.In a kind of manufacturing process, by conventional dry method etch technology by dielectric substrate patterning to be formed
For the hole vertically and horizontally interconnected and groove.Then, optionally promote with diffusion impervious layer and/or adhesion
The surface that layer coating is patterned, then deposition metal level is to fill described groove and hole.Use chemistry machine
Tool polishing (CMP) reduces thickness and the described diffusion impervious layer of described metal level and/or promotion of adhering
The thickness of layer, until exposing underlying dielectric layer, thus forms circuit devcie.
A kind of method manufacturing planar metal circuit traces on silicon dioxide base material is referred to as mosaic technology
(damascene process).According to this technique, by optionally there is nitridation deposited thereon as follows
The dioxide dielectric patterned surface of silicon layer: coating photoresist, makes photoresist be exposed to through in order to limit
Determine the radiation of the pattern of groove and/or through hole, then use the dry method etch technology of routine to be formed for vertically
Hole and groove with level interconnection.It is not groove with protection that described silicon nitride plays the effect of " hard mask "
And/or the silica surface of a part for through hole exempts from damage during etching.Patterned surface is coated with
It is covered with adhesion promoter layer (such as titanium or tantalum) and/or diffusion impervious layer (such as titanium nitride or tantalum nitride).Then
It is cladded with (over-coat) adhesion promoter layer and/or diffusion impervious layer with metal level.Use chemically mechanical polishing with
Reduce the thickness of described metal over-layer and any adhesion promoter layer and/or the thickness of diffusion impervious layer, directly
To obtaining the flat surfaces exposing the silicon oxide surface part exceeded.Through hole and groove still fill with tangible
Become the conducting metal of circuit interconnection.
Tungsten and copper are most often used as conducting metal.But, it is increasingly considered and will have been used for early
To manufacture electricity via subtractive processes (subtractive process) such as etching technique in first production technology
The aluminum of road interconnection is in mosaic technology.The combination of aluminum and titanium provides potentially than other metal/barrier layer group
Close low resistivity, and the corresponding potential improvement in terms of circuit performance.
Having been described with the polishing composition for aluminum mosaic texture, it contains use gathering containing sulphonic acid ester
The alumina abrasive that compound or copolymer processed.Although the polymer containing sulphonic acid ester or copolymer purport
It is being used for giving alumina abrasive with colloidal stability, but, other polishing component such as chelating agent,
The existence of morphology control agent and surface treatment polymers may result in the described polymer containing sulphonic acid ester or is total to
Polymers shifts (displacement) from alumina abrasive granule, and result is the colloid-stabilised of polishing composition
Property is impaired.Cause agglomeration between oarse-grained granule can produce scratch and other table on the base material polished
Planar defect.Therefore, the method that need nonetheless remain for the polishing improvement containing aluminium base in this area.
Summary of the invention
The present invention provides a kind of method chemically-mechanicapolish polishing base material, and the method includes: (i) provide comprise to
The base material of a few aluminium lamination；(ii) polishing pad is provided；(iii) providing polishing composition, it comprises: (a) is with altogether
The alpha aluminium oxide particle of polymers cladding, this copolymer comprises at least one sulfonate radical (sulphonic acids, sulfonate)
Monomer and selected from carboxylate radical (carboxylic acids, carboxylate) monomer, phosphonate radical (phosphonic acid based, phosphonate)
Monomer and at least one monomer of phosphate radical (phosphoric acid class, phosphate) monomer, (b) is for the chelating agent of aluminum
And (c) water；(iv) surface of this base material is contacted with this polishing pad and this polishing composition；And (v) abrades
The described surface of this base material at least some of, with remove from the described surface of this base material at least some aluminum and
Polishing the described surface of this base material, wherein the pH value of this polishing composition is 1 to 6, and wherein said
Coated alpha aluminium oxide particle is colloid-stabilised in this polishing composition.
The present invention also provides for a kind of method chemically-mechanicapolish polishing base material, and the method includes: (i) provides and comprise
The base material of at least one aluminium lamination；(ii) polishing pad is provided；(iii) providing polishing composition, it comprises: (a) grinds
Grinding agent, wherein this grinding agent has the granule of negative zeta potential in being included in this polishing composition, and (b) is used for
The chelating agent of aluminum, (c) at least one alkyl diphenyl ether disulfonate surfactant and (d) water；(iv) should
The surface of base material contacts with this polishing pad and this polishing composition；And (v) abrades the described surface of this base material
At least some of, to remove at least some aluminum from the described surface of this base material and to polish described in this base material
Surface, wherein the pH value of this polishing composition is 1 to 6, and wherein said grinding agent is in this polishing group
Compound is colloid-stabilised.
The present invention further provides a kind of chemical-mechanical polishing compositions, it comprises: (a) is coated with copolymer
Alpha aluminium oxide particle, this copolymer is substantially by least one sulfonate radical monomer and at least one acrylic acid
Root monomer forms；(b) organic carboxyl acid；And (c) water, wherein the pH value of this polishing composition is 1 to 6,
And wherein said coated alpha aluminium oxide particle is colloid-stabilised in this polishing composition.
The present invention additionally provides a kind of chemical-mechanical polishing compositions, it comprises: (a) grinding agent, wherein should
Grinding agent is included in the granule in this polishing composition with negative zeta potential；(b) organic carboxyl acid；C () at least
A kind of alkyl diphenyl ether disulfonate surfactant；And (d) water, the wherein pH value of this polishing composition
Being 1 to 6, wherein this grinding agent is colloid-stabilised in this polishing composition, and wherein this polishing group
The most contained (the X of compound2)nThe compound of-L, wherein X2Represent tetrazolium, 1,2,4-triazole, 1,2,3-triazole,
Or benzotriazole, and wherein L represents linking group.
Detailed description of the invention
The present invention provides a kind of method chemically-mechanicapolish polishing base material, and the method includes: (i) provide comprise to
The base material of a few aluminium lamination；(ii) polishing pad is provided；(iii) polishing composition is provided；(iv) by the table of this base material
Face contacts with this polishing pad and this polishing composition；And (v) abrade this base material described surface at least one
Part, to remove at least some aluminum and to polish the described surface of this base material from the described surface of this base material.Should
Polishing composition comprises: the alpha aluminium oxide particle that (a) is coated with copolymer, and this copolymer comprises at least one
Sulfonate radical monomer and at least one list selected from carboxylate radical monomer, phosphonate radical monomer and phosphate radical monomer
Body；B () is for the chelating agent of aluminum；And (c) water.Or, this polishing composition comprises: (a) grinding agent,
Wherein this grinding agent has the granule of negative zeta potential in being included in this polishing composition；B () is for the network of aluminum
Mixture；(c) at least one alkyl diphenyl ether disulfonate surfactant；And (d) water.At both of these case
In, the pH value of polishing composition is 1 to 6, and described grinding agent is that colloid is steady in polishing composition
Fixed.
This grinding agent can be any suitable grinding agent, and such as, this grinding agent can be natural or synthesis,
And metal-oxide, carbide, nitride, corundum etc. can be comprised.This grinding agent can be also polymer
Granule or coated granule.In line with expectations, this grinding agent comprise metal-oxide, substantially by
Metal-oxide forms or is made up of metal-oxide.In preferred embodiments, this burning
Thing is aluminium oxide.This aluminium oxide can comprise the aluminium oxide of any suitable phase, substantially by any suitable phase
The aluminium oxide of state forms or is made up of the aluminium oxide of any suitable phase, described any suitable phase
Aluminium oxide such as Alpha-alumina, gama-alumina, δ-aluminium oxide, alumina and combinations thereof.
Most preferably, this metal-oxide comprise Alpha-alumina, substantially be made up of Alpha-alumina or by α-
Aluminium oxide forms.When the abrasive comprises alpha-alumina, this grinding agent also can comprise the oxygen of other form
Change aluminum, such as alumina.In some embodiments, this grinding agent is made up of Alpha-alumina.
This grinding agent can have any suitable particle mean size (that is, mean diameter).Especially, and especially
It is that, when this grinding agent is aluminium oxide, the particle mean size (such as, mean diameter) of this grinding agent can be 15
Nanometer or bigger (such as, 20 nanometers or bigger, 30 nanometers or bigger or 40 nanometers or bigger or
50 nanometers or bigger or 75 nanometers or bigger).Alternatively or additionally, the particle mean size of this grinding agent
Can be 250 nanometers or less (such as, 200 nanometers or less or 150 nanometers or less or 125 receive
Rice or less or 100 nanometers or less).Therefore, this grinding agent can have by with appointing in upper extreme point
Anticipate two particle mean sizes defined.Such as, the particle mean size of this grinding agent can be that 15 nanometers are to 250
Nanometer, 20 nanometers to 200 nanometers, 30 nanometers to 200 nanometers, 30 nanometers to 150 nanometers, 40 receive
Rice to 250 nanometers, 40 nanometers to 200 nanometers, 40 nanometers to 150 nanometers, 50 nanometers are received to 250
Rice, 50 nanometers to 200 nanometers or 50 nanometers are to 150 nanometers.In this respect, granularity refers to surround
The diameter of the minimum ball of this granule.
In embodiments, abrasive particles processes through copolymer, and this copolymer comprises at least one sulfonic acid
Root monomer and selected from carboxylate radical monomer, phosphonate radical monomer and at least one monomer of phosphate radical monomer.?
In preferred embodiment, this copolymer comprises at least one sulfonate radical monomer and at least one carboxylate radical monomer
Combination.Preferably, this sulfonate radical monomer is selected from: vinyl sulfonic acid, 2-(methacryloxy) second
Sulfonic acid, styrene sulfonic acid, 2-acrylamido-2-methyl propane sulfonic acid
(2-acrylamido-2-methylpropane sulfonic acid).Preferably, another kind of monomer is selected from: third
Olefin(e) acid, methacrylic acid, methylene-succinic acid, maleic acid, maleic anhydride, vinyl phosphonic
Acid, 2-(methacryloxy) ethyl phosphonic acid ester, and combinations thereof.It is highly preferred that it is described another kind of single
Body comprises at least one carboxylate radical monomer, and most preferably comprises at least one propylene acylate monomers.Specifically
In embodiment, this copolymer is selected from: polyacrylic acid-co-poly acrylamido-2-methyl propane sulfonic acid,
Polyacrylic acid-co-poly styrene sulfonic acid and PVPA-co-poly acrylamido-2-methyl
Propane sulfonic acid.
In another embodiment, abrasive particles processes through electronegative polymer or copolymer.This band
The polymer of negative electricity or copolymer can be any suitable polymer or copolymer.This electronegative polymer
Or preferably containing at least a kind of sulfonate radical monomer of copolymer, its with comprise at least one sulfonate radical monomer and
Different selected from the copolymer of at least one monomer of carboxylate radical monomer, phosphonate radical monomer and phosphate radical monomer.
Preferably, this electronegative polymer or copolymer comprise selected from following repetitive: vinyl sulfonic acid,
2-(methacryloxy) ethyl sulfonic acid, styrene sulfonic acid, 2-acrylamido-2-methyl propane sulfonic acid and
A combination thereof.Most preferably, this electronegative polymer or copolymer are selected from poly-(2-acrylamido-2-first
Base propane sulfonic acid) and polystyrolsulfon acid.
Abrasive particles can before joining in polishing composition individually with polymer or copolymer at
Reason.Any suitable method can be used to use polymer or copolymer to process abrasive particles.Such as,
Such as Waring blender (Waring blender) can be used under high shear conditions with polymer or copolymerization
Thing processes abrasive particles.In other embodiments, can be with poly-during preparing polishing composition
Compound or copolymer in-situ treatment abrasive particles.Described polymer or copolymer can be in preparation polishing combinations
Whenever addition during thing, before adding abrasive particles and abrasive particles simultaneously,
Or after adding abrasive particles, wherein other component of one or more of polishing composition is any
Add time suitably or exist.
In line with expectations, grinding agent has negative zeta potential under being included in the pH value of this polishing composition
Abrasive particles, substantially by the grinding agent under the pH value of this polishing composition with negative zeta potential
Granule forms or by the abrasive particles under the pH value of this polishing composition with negative zeta potential
Composition.In some embodiments, when unprocessed, abrasive particles is at the pH of this polishing composition
Value is lower can have positive zeta potential, but, using at polymer as described herein or copolymer
During reason, abrasive particles can have negative zeta potential under the pH value of this polishing composition.Real at other
Execute in scheme, grinding agent can be have under the pH value of this polishing composition negative zeta potential without place
The grinding agent of reason.It is included in the grinding of the granule under the pH value of this polishing composition with negative zeta potential
The limiting examples of agent includes wet silica and pyrolytic silicon dioxide.The zeta potential of granule refers to enclose
Around the ion of this granule electric charge and bulk solution (such as, liquid-carrier and other any be dissolved in wherein
Component) electric charge between difference.
This polishing composition comprises the chelating agent for aluminum.The described chelating agent for aluminum can be any properly
Chelating agent.Preferably, the described chelating agent for aluminum is organic carboxyl acid.It is used for it is highly preferred that described
The chelating agent of aluminum is selected from: malonic acid, phthalic acid, lactic acid, tartaric acid, gluconic acid, citric acid,
Malic acid, glycolic, maleic acid, and combinations thereof.
This polishing composition can comprise any proper amount of chelating agent for aluminum.This polishing composition can wrap
Containing 0.1 weight % or more, such as, 0.2 weight % or more, 0.3 weight % or more, 0.4 weight
% or more or 0.5 weight % or the more chelating agent for aluminum.Alternatively or additionally, this throwing
Light compositions can comprise 3 weight % or less, such as, 2.5 weight % or less, 2 weight % or less,
1.5 weight % or less or 1 weight % or less chelating agent for aluminum.Therefore, this polishing combination
Thing can comprise by for described any two institute circle in the above-mentioned end points cited by the chelating agent of aluminum
The chelating agent for aluminum of fixed amount.Such as, this polishing composition can comprise 0.1 weight % to 3 weight
%, 0.1 weight % to 2.5 weight %, 0.1 weight % to 2 weight %, 0.3 weight % to 3 weight %,
0.3 weight % to 2.5 weight %, 0.3 weight % to 2 weight %, 0.5 weight % to 3 weight %, 0.5
Weight % is to 2.5 weight % or the chelating agent for aluminum of 0.5 weight % to 2 weight %.
In line with expectations, grinding agent is suspended in polishing composition, is more specifically suspended in polishing combination
In the water of thing.When grinding agent is suspended in polishing composition, grinding agent is preferably colloid-stabilised.Art
Language " colloid " refers to abrasive particles suspension in water.Colloidal stability refers to this suspension at any time
Between retentivity.In the context of the present invention, if occurring, following situation just thinks that grinding agent is that colloid is steady
Fixed: when grinding agent suspension in water or in polishing composition is placed in 100 milliliters of graduated cylinders
And make it stand 2 hours (such as, 4 hours or 8 hours or 24 without agitation
Hours or week age or four time-of-weeks or 16 time-of-weeks) time, the bottom 50ml of graduated cylinder
In granule density ([B], in units of g/ml) and graduated cylinder top 50ml in granule density ([T],
In units of g/ml) between difference divided by the granule initial concentration in abrasive composition, ([C], with g/ml
For unit) less than or equal to 0.5 (that is, { [B]-[T] }/[C]≤0.5).In line with expectations, [B]-[T]/[C]
Value is less than or equal to 0.3, and preferably lower than or equal to 0.1.
Polishing composition comprises the reagent aoxidizing aluminum the most further.Described aluminum is aoxidized
Reagent can be any reagent at the ph of the polishing composition with suitable oxidizing potential.Properly
The limiting examples of oxidising agent include selected from following oxidant: hydrogen peroxide, organic peroxide acid,
Persulfate, nitrate, periodate, perbromate, bromate, iron salt, and combinations thereof.
This polishing composition can comprise the reagent aoxidizing aluminum of any suitable amount.This polishing group
Compound can comprise 0.1 weight % or more, such as, 0.25 weight % or more, 0.5 weight % or more,
0.75 weight % or more or 1 weight % or the reagent more aluminum aoxidized.Alternatively or volume
Other places, this polishing composition can comprise 5 weight % or less (such as 4 weight % or less, 3 weight %
Or less, 2 weight % or less or 1 weight % or less) the reagent that aluminum is aoxidized.Therefore,
This polishing composition can comprise by the above-mentioned end points enumerated for the described reagent place aoxidizing aluminum
The reagent that aluminum is aoxidized of amount that defined of any two.Such as, this polishing composition can comprise
0.1 weight % to 5 weight %, 0.25 weight % to 4 weight %, 0.5 weight % to 3 weight %, 0.75
Aluminum is carried out by weight % to 2 weight %, 1 weight % to 3 weight % or 1 weight % to 2 weight %
The reagent of oxidation.
This polishing composition comprises surfactant the most further.Described surfactant can be cloudy from
Subtype surfactant, nonionic surfactant or amphoteric ionic surfactant.Advantageously,
Surfactant existence in polishing composition improves the colloidal stability of polishing composition, stabilizes
The granularity of abrasive particles and/or improve the pattern of the semiconductor wafer using polishing composition polishing.
The suitably limiting examples of surfactant includes: polysulfonates；Polycarboxylate；Polyphosphonates；
Polyalcohols (such as, polyvinyl alcohol)；Comprise selected from sulphonic acid ester, carboxylate, phosphonate ester, alcohol, and combinations thereof
The copolymer of monomer.
In preferred embodiments, described surfactant is alkyl diphenyl ether disulfonate surface activity
Agent.Typically, described alkyl diphenyl ether disulfonate surfactant has a following structure:
Wherein R is C1-C30, preferred C6-C30, more preferably C6-C22Straight or branched, saturated or not
Saturated alkyl, wherein said alkyl optionally comprises the one or more hetero atoms selected from O and N,
And wherein X+For hydrogen or cation, such as, alkali metal cation or alkaline earth metal cation (such as, sodium,
Potassium, lithium, calcium, magnesium etc.).The example of suitable alkyl diphenyl ether disulfonate surfactant includes can
With trade name DowfaxTM2A1、DowfaxTM3B2、DowfaxTM8390、DowfaxTMC6L、
DowfaxTMC10L and DowfaxTM30599 are purchased from Dow Chemical Company (Midland, MI)
Surfactant.
This polishing composition can comprise any proper amount of surfactant.Therefore, this polishing composition can
Comprise 0.001 weight % or more, such as, 0.005 weight % or more, 0.01 weight % or more,
0.05 weight % or more, 0.1 weight % or more, 0.2 weight % or more, 0.3 weight % or more,
0.4 weight % or more or 0.5 weight % or more surfactant.Alternatively or additionally, should
Polishing composition can comprise 2 weight % or less, such as, 1.8 weight % or less, 1.6 weight % or
Less, 1.4 weight % or less, 1.2 weight % or less or 1 weight % or less surface activity
Agent.Therefore, this polishing composition can comprise by for appointing in the above-mentioned end points cited by surfactant
The surfactant of two amounts defined of meaning.Such as, this polishing composition can comprise 0.001 weight %
To 2 weight %, 0.05 weight % to 1.8 weight %, 0.1 weight % to 1.6 weight %, 0.2 weight %
To 1.4 weight %, 0.3 weight % to 1.2 weight %, 0.4 weight % to 1.2 weight % or 0.5 weight
The surfactant of % to 1 weight %.
In line with expectations, the most contained (X of this polishing composition2)nThe compound of-L, wherein X2Represent four
Azoles, 1,2,4-triazoles, 1,2,3-triazoles or benzotriazole, wherein L represents linking group, such as, its
Middle L represents the linking group with 2 or higher quantivalences, and it comprises selected from urea groups, ghiourea group, amide
Base, ester group, sulfoamido, sulfonylurea base, hydroxyl, carbamate groups, ether, amino, carboxyl,
At least one group of sulfonic group and heterocyclic group, and n is the integer of two or more.
In line with expectations, the pH value of this polishing composition is 1 or higher (such as, 2 or higher).Preferably
Ground, the pH value of this polishing composition is 5 or lower (such as, 4 or lower or 3 or lower).More excellent
Selection of land, the pH value of this polishing composition is 2 to 4 (such as, 2 to 3).
Can be realized and/or maintain the pH value of polishing composition by any suitable means.More specifically,
Polishing composition can further include pH value regulator, pH or a combination thereof.PH value is adjusted
Joint agent can be that any suitable pH value regulates compound.Such as, pH value regulator can be nitric acid, hydrogen-oxygen
Change potassium, ammonium hydroxide or a combination thereof.PH can be any suitable buffer agent, such as,
Phosphate, sulfate, acetate, borate, ammonium salt etc..Polishing composition can comprise any appropriate amount
PH value regulator and/or pH, condition be use proper amount of buffer agent realize and/
Or maintain the pH value of polishing composition in scope described herein.
This polishing composition optionally comprises film former (that is, corrosion inhibitor).Described film former can be to use
Any suitable film former in any component (composition) of base material.Preferably, described film former is that copper is rotten
Corrosion inhibitor or tungsten corrosion inhibitor.For purposes of the present invention, film former is to promote polishing
Surface at least some of on form any compound or the chemical combination of passivation layer (that is, dissolution inhibition layer)
The mixture of thing.Available film former includes, such as, and nitrogenous heterocyclic compound.This film former in accordance with
Desirably comprise one or more five yuan or hexa-atomic heterocyclic type containing azo-cycle.Preferably film former includes
1,2,3-triazoles, 1,2,4-triazoles, benzotriazole, benzimidazole, benzothiazole and derivant, example
As, it replaces through hydroxyl, amino, imino group, carboxyl, sulfydryl, nitro, urea, thiourea or alkyl
Derivant.Most preferably, described film former is selected from benzotriazole, 1,2,4-triazole and mixture thereof.
This polishing composition can comprise any proper amount of film former.Therefore, this polishing composition can comprise
0.0001 weight % or more, such as, 0.0005 weight % or more, 0.001 weight % or more, 0.005
Weight % or more, 0.01 weight % or more or 0.1 weight % or more film former.Alternatively or
Extraly, this polishing composition can comprise 2 weight % or less, such as, 1.8 weight % or less, 1.6
Weight % or less, 1.4 weight % or less, 1.2 weight % or less or 1 weight % or less
Film former.Therefore, this polishing composition can comprise by for appointing in the above-mentioned end points cited by film former
The film former of two amounts defined of meaning.Such as, this polishing composition can comprise 0.0001 weight % to 2
Weight %, 0.005 weight % are to 1.8 weight %, 0.01 weight % to 1.6 weight % or 0.1 weight %
Film former to 1 weight %.
This polishing composition comprises Biocide the most further.Described Biocide can be any properly
Biocide, such as, isothiazolone Biocide.Biocide used in polishing composition
Amount be typically 1ppm to 500ppm, and preferably 10ppm to 200ppm.
Can prepare polishing composition by any suitable technology, many of which is people in the art
Member is known.Can in a batch process or continuity method prepares polishing composition.It is said that in general, polishing composition can
Prepare by its each component is combined in any order.Term used herein " component " includes individually
Composition (such as, grinding agent, the chelating agent for aluminum, the reagent that aluminum is aoxidized, surfactant,
Optional film former, optional Biocide etc.) and each composition (such as, grinding agent, network for aluminum
Mixture, the reagent that aluminum is aoxidized, surfactant, optional film former, optional Biocide
Deng) any combination.
Such as, grinding agent can be dispersed in water.Then, the chelating agent for aluminum, optional can be added
Surfactant, optional film former and optional Biocide, and by each component being incorporated into
Any means in polishing composition and mix.If employing the reagent that aluminum is aoxidized, then can be
Preparing any moment during polishing composition is added into.Polishing composition can be made before the use
Standby, the most before the use (the most such as, in 1 minute before use or in 1 hour before use,
Or in 7 days before use) one or more components (reagent such as aoxidized aluminum) are joined polishing
In compositions.Polishing composition mixes each group also by during polishing operation at substrate surface
Divide and prepare.
Polishing composition can as comprise grinding agent, the chelating agent for aluminum, the reagent that aluminum is aoxidized,
The one-package system of surfactant, optional film former, optional Biocide and water provides.Or,
Grinding agent can provide in the first container as the dispersion in water, and, for aluminum chelating agent,
Surfactant, optional film former and optional Biocide can be in a dry form or as at water
In solution or dispersion provide in second container.In line with expectations, the reagent that aluminum will be aoxidized
It is provided separately with other component of polishing composition, and such as by end user's (example soon
As, use first 1 week or shorter time, first 1 day of use or shorter time, first 1 hour or shorter of use
Time, use first 10 minutes or shorter time or use first 1 minute or shorter time) with polishing group
Other component combination of compound.First or second container in component can be dried forms, and other container
In component can be aqueous dispersion form.And, desirably, each group in the first and second containers
Divide and there is different pH value or there is essentially similar or the most equal pH value.Polishing combination
Other two container combination or three or more the container combination of each component of thing are general in this area
In the ken of logical technical staff.
The polishing composition of the present invention is alternatively arranged as concentrate to be provided, and this concentrate is intended to use before the use
Appropriate water dilution.In such embodiments, polishing composition concentrate can comprise grinding agent, use
In aluminum chelating agent, surfactant, optional film former, optional Biocide and water, have or
Not having the optional reagent aoxidizing aluminum, its amount makes with appropriate water and optional to aluminum
When carrying out reagent (if not yet existing) the dilution concentrate aoxidized with suitable amount, polishing composition
Each component will with above for the amount in the OK range cited by each component be present in polishing combination
In thing.Such as, grinding agent, chelating agent for aluminum, surfactant, optional film former and optionally
Biocide each can be above for (such as, 3 times, 4 times, 2 of the concentration cited by each component times
Or 5 times) concentration of big amount exists so that when with isopyknic water (such as, respectively with 2 times of equal-volumes
Water, 3 times of isopyknic water or 4 times of isopyknic water) and described optional aluminum is entered of appropriate amount
During the reagent dilutions concentrate that row aoxidizes, each component is by with above in the scope described in each component
Amount is present in polishing composition.Additionally, as one of ordinary skill in the art will appreciate, concentrate can
Comprise the water being present in final polishing composition of suitable mark, with guarantee other component at least partly or
It is fully dissolved in this concentrate.
Embodiment
Following example further illustrate the present invention, but certainly should not be construed in any way as limiting its model
Enclose.
In the examples below, three presser type Mirra buffing machine (Applied Materials are used；Santa
Clara, CA) it is polished experiment.Burnishing parameters is as follows: use D100 polishing pad (Cabot
Microelectronics Corporation, Aurora, IL), pressing plate 1 was polished with two stages:
Stage 1-is under the downforce of 24.2 kPas, and stage 2-is under the downforce of 13.8 kPas.Pressing plate 2 is used
In polishing cleaning (buff cleaning).Base material is by the silicon dioxide of the patterning having titanium lining being covered with outward aluminum
Silicon wafer (the titanium-lined patterned silicon dioxide-coated silicon wafers covered
Overcoated with aluminum) composition.This base material contains such pattern, described pattern comprise by
10 micron lines that 10 micron pitch separate.
Embodiment 1
This example demonstrates that when being used for polishing containing the feature having titanium lining deposited on the dielectric layer
The base material of aluminum time, polishing composition of the present invention the changing at defect (defectivity) aspect that can realize
Kind.
Two kinds of different polishing compositions (compositions 1A and compositions 1B) are used to polish two bases respectively
Material.1.5 weight % lactic acid that every kind of polishing composition is included in water and 3 weight % hydrogen peroxide, pH
Value is 3.4.Compositions 1A (contrast) comprise further 0.5 weight % with 1150ppm polypropylene acyl group
The Alpha-alumina that amino-2-methyl propane sulfonic acid processes.Compositions 1B (present invention) comprises 0.5 weight further
The alpha-oxidation processed with 1150ppm polyacrylic acid-co-poly acrylamido-2-methyl propane sulfonic acid of %
Aluminum.Compositions 1C (contrast) comprise further 0.5 weight % with 1150ppm polyacrylic acid process α-
Aluminium oxide.Compositions 1C is not colloid-stabilised, is therefore not used for polishing base material.
After polishing, base material is cleaned, and by AIT chip detection system (KLA-Tencor；
Milpitas, CA) detection defect.The overall defect number of normalization (normalized) is as scanogram and figure
As the ratio of sum is multiplied by defect counting (the ratio of scanned images to total number of images
Multiplied by the defect count) determine.Result is shown in Table 1.
Table 1
| Compositions | Sulfonate radical monomer (mole %) | Polymer or the molecular weight of copolymer | Normalized overall defect number |
| 1A (contrasts) | 100 | 20000 | 100 |
| 1B (invents) | 20 | 30000 | 21 |
| 1C (contrasts) | 0 | 50000 | NA |
Obvious by the result as shown in table 1, use containing with polyacrylic acid-co-poly acrylamide
Compositions 1B of the Alpha-alumina that base-2-methyl propane sulfonic acid processes causes using containing with polypropylene acyl group ammonia
The viewed normalized overall defect number of compositions 1A of the Alpha-alumina that base-2-methyl propane sulfonic acid processes
About 20%.Compositions 1B at least 6 months is colloid-stabilised, and compositions 1A maintains 7 to 60
It colloidal stability.
Embodiment 2
This example demonstrates that when being used for polishing containing the feature having titanium lining deposited on the dielectric layer
The base material of aluminum time, polishing composition of the present invention the improvement in terms of defect that can realize.
Five kinds of different polishing compositions (compositions 2A to 2E) are used to polish five base materials respectively.Every kind
1 weight % lactic acid that polishing composition is included in water, 3 weight % hydrogen peroxide and 1000ppm
DowfaxTM8390 (alkyl diphenyl ether sulfonate surfactants), pH value is 3.4.Compositions 2A is (right
Than) comprise processing with 1150ppm polypropylene acyl group amino-2-methyl propane sulfonic acid of 0.5 weight % further
Alpha-alumina.Compositions 2B to 2E (invention) comprises having with 1150ppm of 0.5 weight % further
There are different mole percents and the polypropylene of different molecular weight of the monomer containing sulfonate radical as shown in table 2
The Alpha-alumina that acid-co-poly acrylamido-2-methyl propane sulfonic acid copolymer processes.
After polishing, base material is cleaned, and detects defect by AIT chip detection system.Always
Scratch defects number be as by AIT systematic observation to the amount of images with scratch and determine.Knot
Fruit is shown in Table 2.
Table 2
| Compositions | Sulfonate radical monomer (mole %) | Molecular weight | Total scratch defects number |
| 2A (contrasts) | 100 | 20000 | 2227 |
| 2B (invents) | 25 | 30000 | 33 |
| 2C (invents) | 20 | 21000 | 43 |
| 2D (invents) | 17 | 24000 | 34 |
| 2E (invents) | 14 | 7400 | 47 |
Obvious by the result as shown in table 2, use and all contain with polyacrylic acid-co-poly acryloyl
The compositions 2B to 2E of the Alpha-alumina that amino-2-methyl sulphonic acid copolymer processes causes containing with use
What compositions 2A having the Alpha-alumina with the process of polypropylene acyl group amino-2-methyl propane sulfonic acid was compared always scrapes
The about 1.5%-about 2.1% of trace number of defects.
Embodiment 3
This example demonstrates that when being used for polishing containing the feature having titanium lining deposited on the dielectric layer
The base material of aluminum time, polishing composition of the present invention the improvement in terms of defect that can realize.
Three kinds of different polishing compositions (compositions 3A to 3C) are used to polish three base materials respectively.Every kind
1 weight % lactic acid that polishing composition is included in water and 3 weight % hydrogen peroxide, pH value is 3.4.
Compositions 3A (contrast) comprise further 0.5 weight % with 1150ppm polypropylene acyl group amino-2-methyl
The Alpha-alumina of propane sulfonic acid process and the polycarboxylic acid polymer that molecular weight is 100,000 of 1000ppm.Group
Compound 3B (invention) comprise further 0.5 weight % with 1150ppm polypropylene acyl group amino-2-methyl third
The Alpha-alumina of sulfonic acid process and the Dowfax of 1000ppmTM8390 (alkyl diphenyl ether sulfonate surfaces
Activating agent).Compositions 3C (invention) comprise further 0.5 weight % with 1150ppm polyacrylic acid-altogether
Poly-poly acrylamido-2-methyl propane sulfonic acid process Alpha-alumina, but comprise the most further any additionally
Polymer or copolymer.This treated Alpha-alumina grinding agent has negative ζ in polishing composition
Current potential.
After polishing, base material is cleaned.Measure the quantity of aluminum depression (dishing), and pass through AIT
Chip detection system detection defect.Total scratch defects number be as by AIT systematic observation to have and scrape
The amount of images of trace determines.Result is shown in Table 3.
Table 3
| Compositions | Additive | Depression (angstrom) | Total scratch defects number |
| 3A (contrasts) | Polycarboxylic acids | 61 | 19000 |
| 3B (invents) | DowfaxTM8390 | 42 | 1600 |
| 3C (invents) | Nothing | 209 | 475 |
Obvious by the result as shown in table 3, use containing 1000ppm alkyl diphenyl ether sulfonate table
Face activating agent (i.e. DowfaxTM8390) compositions 3B causes and uses containing 1000ppm polycarboxylic acids
About the 8.4% of total scratch defects number that compositions 3A of polymer is compared.Use and gather containing with 1150ppm
Alpha-alumina that acrylic acid-co-poly acrylamido-2-methyl propane sulfonic acid processes but comprise the most further
Compositions 3C of any extra copolymer causes the total scratch compared with using compositions 3A and 3B to lack
Fall into the most about the 2.5% and about 30% of number.But, use compositions 3C to cause as using compositions
About 5 times of big depressions of the viewed depression of 3B.
Embodiment 4
This example demonstrates that when being used for polishing containing the feature having titanium lining deposited on the dielectric layer
The base material of aluminum time, polishing composition of the present invention the improvement in terms of defect that can realize.
Three kinds of different polishing compositions (compositions 4A to 4C) are used to polish three base materials respectively.Every kind
0.5 weight % that polishing composition is included in water with 1150ppm polyacrylic acid-co-poly acryloyl
Alpha-alumina, 1 weight % lactic acid and the 3 weight % hydrogen peroxide that amino-2-methyl propane sulfonic acid processes,
PH value is 3.4.Compositions 4A (comparison) comprise further the molecular weight of 1000ppm be 100,000 poly-
Carboxylic acid polyalcohol.Compositions 4B (contrast) comprises the Calsoft LAS99 (C of 1000ppm further12-C16
Linear alkylbenzene sulfonate (LAS)).Compositions 4C (present invention) comprises the Dowfax of 1000ppm furtherTM
8390 (alkyl diphenyl ether sulfonate surfactants).
After polishing, base material is cleaned.Measure the quantity of aluminum depression, and examined by AIT wafer
Examining system detection defect.Total scratch defects number be as by AIT systematic observation to the figure with scratch
As quantity determines.Result is shown in Table 4.
Table 4
| Compositions | Additive | Aluminum removes speed (angstrom min) | Depression (angstrom) | Total scratch defects number |
| 4A (compares) | Polycarboxylic acids | 1900 | 44 | 2500 |
| 4B (contrasts) | Calsoft LAS99 | 1900 | 67 | 2500 |
| 4C (invents) | DowfaxTM8390 | 2300 | 66 | 32 |
Obvious, containing alkyl diphenyl ether disulfonate surfactant by the result as shown in table 4
(DowfaxTM8390) present composition 4C as additive demonstrate with containing polycarboxylic acids as adding
Add reference composition 4A of agent and containing C12-C16Linear alkylbenzene sulfonate (LAS) (Calsoft LAS99) conduct
About the 1.3% of total scratch defects number that compositions 4B of additive is compared.
Claims (22)
1. the method chemically-mechanicapolish polishing base material, the method includes:
I () provides the base material comprising at least one aluminium lamination；
(ii) polishing pad is provided；
(iii) providing polishing composition, it comprises:
A alpha aluminium oxide particle that () is coated with copolymer, this copolymer comprises at least one sulfonate radical list
Body and selected from carboxylate radical monomer, phosphonate radical monomer and at least one monomer of phosphate radical monomer；
B () is for the chelating agent of aluminum；
(c) alkyl diphenyl ether disulfonate surfactant；And
(d) water；
(iv) surface of this base material is contacted with this polishing pad and this polishing composition；And
V () abrades at least some of of the described surface of this base material, to remove extremely from the described surface of this base material
Fewer aluminum and the described surface of this base material of polishing,
Wherein the pH value of this polishing composition is 1 to 6, and the α-oxygen of wherein said copolymer cladding
Changing alumina particles is colloid-stabilised in this polishing composition.
2. the process of claim 1 wherein that this copolymer comprises at least one sulfonate radical monomer and at least one
Plant the combination of carboxylate radical monomer.
3. the method for claim 2, at least one of which carboxylate radical monomer comprises at least one propylene acid group
Monomer.
4. the process of claim 1 wherein that this includes organic carboxyl acid for the chelating agent of aluminum.
5. the method for claim 4, wherein this organic carboxyl acid is selected from: malonic acid, phthalic acid, breast
Acid, tartaric acid, gluconic acid, citric acid, malic acid, glycolic, maleic acid, and combinations thereof.
6. the process of claim 1 wherein that this polishing composition comprises the examination aoxidizing aluminum further
Agent.
7. the method for claim 6, wherein this reagent aoxidizing aluminum is selected from: hydrogen peroxide, have
Machine peroxy acid, persulfate, nitrate, periodate, perbromate, bromate, iron salt and
Combination.
8. the process of claim 1 wherein that this base material comprises at least one further selected from following layer:
Tungsten, titanium, titanium nitride, tantalum and tantalum nitride.
9. the method chemically-mechanicapolish polishing base material, the method includes:
I () provides the base material comprising at least one aluminium lamination；
(ii) polishing pad is provided；
(iii) providing polishing composition, it comprises:
A () grinding agent, wherein this grinding agent has negative zeta potential in being included in this polishing composition
Granule；
B () is for the chelating agent of aluminum；
(c) at least one alkyl diphenyl ether disulfonate surfactant；And
(d) water；
(iv) surface of this base material is contacted with this polishing pad and this polishing composition；And
V () abrades at least some of of the described surface of this base material, to remove extremely from the described surface of this base material
Fewer aluminum and the described surface of this base material of polishing,
Wherein the pH value of this polishing composition is 1 to 6, and wherein said grinding agent combines in this polishing
Thing is colloid-stabilised.
10. the method for claim 9, wherein this grinding agent is selected from: wet silica, pyrolysis dioxy
SiClx and through surface coated Alpha-alumina.
The method of 11. claim 9, wherein this chelating agent being used for aluminum includes organic carboxyl acid.
The method of 12. claim 11, wherein this organic carboxyl acid is selected from: malonic acid, phthalic acid,
Lactic acid, tartaric acid, gluconic acid, citric acid, malic acid, glycolic, maleic acid and group thereof
Close.
The method of 13. claim 9, wherein this polishing composition comprises further and to aoxidize aluminum
Reagent.
The method of 14. claim 13, wherein this reagent aoxidizing aluminum is selected from: hydrogen peroxide,
Organic peroxide acid, persulfate, nitrate, periodate, perbromate, bromate, iron salt and
A combination thereof.
15. 1 kinds of chemical-mechanical polishing compositions, it comprises:
A alpha aluminium oxide particle that () is coated with copolymer, this copolymer is selected from polyacrylic acid-co-poly propylene
Acylamino--2-methyl propane sulfonic acid, polyacrylic acid-co-poly styrene sulfonic acid and PVPA-copolymerization
-poly-acrylamido-2-methyl propane sulfonic acid；
(b) organic carboxyl acid；
(c) alkyl diphenyl ether disulfonate surfactant；And
(d) water；
Wherein the pH value of this polishing composition is 2 to 4, wherein the most contained (the X of this polishing composition2)n-L
Compound, wherein X2Represent tetrazolium, 1,2,4-triazoles, 1,2,3-triazoles or benzotriazole, and wherein
L represents has the linking group of 2 or higher quantivalences, its comprise selected from urea groups, ghiourea group, amide groups,
Ester group, sulfoamido, sulfonylurea base, hydroxyl, carbamate groups, ether, amino, carboxyl, sulphur
At least one group of acidic group and heterocyclic group, and n is the integer of two or more, and wherein said with altogether
The alpha aluminium oxide particle of polymers cladding is colloid-stabilised in this polishing composition.
The compositions of 16. claim 15, wherein this copolymer comprises 50 moles of % to 90 mole of %'s
The sulfonate radical monomer of propylene acylate monomers and 10 moles of % to 50 mole of %.
The compositions of 17. claim 15, wherein said composition comprises further and to aoxidize metal
Reagent.
18. 1 kinds of chemical-mechanical polishing compositions, it comprises:
A () grinding agent, wherein this grinding agent has the granule of negative zeta potential in being included in this polishing composition；
(b) organic carboxyl acid；
(c) at least one alkyl diphenyl ether disulfonate surfactant；And
(d) water；
Wherein, the pH value of this polishing composition is 2 to 4, and described grinding agent is in this polishing composition
It is colloid-stabilised, and the most contained (X of this polishing composition2)nThe compound of-L, wherein X2Represent four
Azoles, 1,2,4-triazoles, 1,2,3-triazoles or benzotriazole, and wherein L representative has 2 or higher chemical combination
The linking group of valency, it comprises selected from urea groups, ghiourea group, amide groups, ester group, sulfoamido, sulfonylurea
Base, hydroxyl, carbamate groups, ether, amino, carboxyl, sulfonic group and heterocyclic group are at least
A kind of group, and n is the integer of two or more.
The compositions of 19. claim 18, wherein this grinding agent be non-modified wet silica,
Or use the wet silica that anionic functional group is modified.
The compositions of 20. claim 18, wherein this grinding agent comprises the alpha-oxidation by copolymer cladding
Alumina particles, this copolymer is substantially by least one sulfonate radical monomer and at least one propylene acylate monomers group
Become.
The compositions of 21. claim 18, wherein this organic carboxyl acid is selected from: malonic acid, phthalic acid,
Lactic acid, tartaric acid, gluconic acid, citric acid, malic acid, glycolic, maleic acid and group thereof
Close.
The compositions of 22. claim 18, wherein this polishing composition comprises further and aoxidizes aluminum
Reagent.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/237,881 US8623766B2 (en) | 2011-09-20 | 2011-09-20 | Composition and method for polishing aluminum semiconductor substrates |
| US13/237,881 | 2011-09-20 | ||
| PCT/US2012/054390 WO2013043400A1 (en) | 2011-09-20 | 2012-09-10 | Composition and method for polishing aluminum semiconductor substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103946958A CN103946958A (en) | 2014-07-23 |
| CN103946958B true CN103946958B (en) | 2016-11-30 |
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| CN101535442A (en) * | 2006-11-02 | 2009-09-16 | 卡伯特微电子公司 | CMP of copper/ruthenium/tantalum substrates |
| CN101553550A (en) * | 2006-12-06 | 2009-10-07 | 卡伯特微电子公司 | Compositions for polishing aluminum/copper and titanium in damascene structures |
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|---|---|---|---|---|
| CN1599951A (en) * | 2001-12-05 | 2005-03-23 | 卡伯特微电子公司 | Method for copper CMP using polymeric complexing agents |
| CN1630697A (en) * | 2002-02-11 | 2005-06-22 | 卡伯特微电子公司 | Anionic abrasive particles treated with positively charged polyelectrolytes for cmp |
| CN101535442A (en) * | 2006-11-02 | 2009-09-16 | 卡伯特微电子公司 | CMP of copper/ruthenium/tantalum substrates |
| CN101553550A (en) * | 2006-12-06 | 2009-10-07 | 卡伯特微电子公司 | Compositions for polishing aluminum/copper and titanium in damascene structures |
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