CN103943779A - Trans-organic thin film solar cell modified by polarity buffer layer - Google Patents

Trans-organic thin film solar cell modified by polarity buffer layer Download PDF

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Publication number
CN103943779A
CN103943779A CN201410159500.XA CN201410159500A CN103943779A CN 103943779 A CN103943779 A CN 103943779A CN 201410159500 A CN201410159500 A CN 201410159500A CN 103943779 A CN103943779 A CN 103943779A
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buffer layer
polarity
thin film
solar cell
anode
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于军胜
施薇
李曙光
王瀚雨
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention discloses a trans-organic thin film solar cell modified by a polarity buffer layer, and belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin film solar cells. A trans-structure is adopted for the cell, and a substrate, a transparent conductive cathode ITO, a cathode buffer layer, a light active layer, an anode buffer layer, the polarity buffer layer and a metal anode are arranged from bottom to top; the polarity buffer layer comprises, by mass, 93 percent to 97 percent of N, N- dimethyl formamide, three percent to seven persent of poly (3, 4- ethylene thiophene two oxygen radicals)-poly (styrene sulfonic acid), and the thickness of the polarity buffer layer ranges from 1 nm to 10 nm. The polarity buffer layer is added between the anode buffer layer and the metal anode, so that the work function of the anode buffer layer is improved, device series resistance is reduced, the film forming process of the anode buffer layer is optimized, charge carrier composite probability is reduced, the vertical phase separation degree of PEDOT: PSS thin film is promoted, transmission efficiency of the charge carrier is improved, and the photoelectric conversion efficiency of the device is improved.

Description

The transoid organic thin film solar cell that a kind of polarity resilient coating is modified
Technical field
The invention belongs to organic polymer photovoltaic device or organic semiconductor thin-film area of solar cell, be specifically related to a kind of organic thin film solar cell.
Background technology
Along with the explosive growth of global energy demand, the own primary difficult problem that will face through becoming development of all countries economy of energy problem.Because solar energy has cleaning, the feature such as widely distributed, inexhaustible, research photovoltaic generation solves energy problem becomes emphasis and the focus of regenerative resource area research.At present, according to the difference of the material character of the photoactive layer of composition solar cell, active layer material can be divided into inorganic semiconductor material and organic semiconducting materials.Compared with inorganic semiconductor material, organic semiconducting materials is the synthesis condition gentleness relative to device process conditions of material itself not only, its molecular structure of chemistry is easily modified, while making battery with it, can meet that cost is low, power consumption less, the easily requirement of large-area manufacturing.From the nineties in 20th century, along with the fast development of thin film technique, the performance of battery prepared by employing new material new construction new technology is greatly enhanced.
But compared with the large-scale production of inorganic solar cell, organic solar batteries is because its photoelectric conversion efficiency is also relatively low, it is practical also needs time.Preparing suitable anode buffer layer is the effective ways that improve organic photovoltaic cell photoelectric conversion efficiency.Wherein, poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS) because it has good dissolubility and hole transport ability being widely used in organic solar batteries in recent years.Organic solar batteries based on PEDOT:PSS anode buffer layer has shown good photoelectric properties, further optimizes PEDOT:PSS anode buffer layer and becomes the emphasis of this area research at present.
But, in reciprocal form structure solar cell, PEDOT:PSS limiting factor mainly contains: one, anode buffer layer PEDOT:PSS does not mate and causes cannot forming ohmic contact therebetween with the work function of metal anode, thereby causes device series resistance larger, has finally limited short-circuit current density; Two, anode buffer layer solvent is different from photoactive layer solvent polarity, causes it inhomogeneous at photoactive layer surface filming, and this will cause anode buffer layer surface carrier traps density excessive, thereby increase charge carrier recombination probability; Three, hydrophobic conductive PEDOT group cannot effectively carry out vertical being separated with hydrophilic non-conductive PSS group in film forming procedure, thereby has limited carrier transport efficiency.
Summary of the invention
Problem to be solved by this invention is: the transoid organic thin film solar cell that how to provide a kind of polarity resilient coating to modify, object is by adding polarity resilient coating to carry out modified anode resilient coating, to realize: (1) improves the work function of anode buffer layer, reduce device series resistance; (2) optimize anode buffer layer film forming procedure, reduce charge carrier recombination probability; (3) promote PEDOT:PSS film to be vertically separated, improve carrier transport efficiency.
For addressing the above problem, technical scheme of the present invention is:
The transoid organic thin film solar cell that polarity resilient coating is modified, is characterized in that: this solar cell adopts reciprocal form structure, is followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, polarity resilient coating, metal anode; Described polarity resilient coating mass percent consists of: N, dinethylformamide 93～97%, poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS) 3～7%, polarity buffer layer thickness is 1～10nm.
As preferably, described anode buffer layer material for poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS), anode buffer layer thickness is 15～50nm.
As preferably, described photoactive layer is mixed with and is formed by electron donor material P3HT and electron acceptor material PCBM, and P3HT:PCBM mixed solution mass component is than being 1:20～5:1, and solution concentration is 1～20mg/ml, and photoactive layer thickness is 50～300nm.
As preferably, described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, cathode buffer layer thickness range is 1～20nm.
As preferably, described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100～300nm.
As preferably, described backing material is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
Compared with prior art, the invention has the advantages that:
One, by introducing polarity resilient coating, can improve anode buffer layer work function, reduce between itself and metal anode can extreme difference, thereby form ohmic contact, reduce the series resistance of device;
Two, by polarity resilient coating modified anode buffer-layer surface, optimize its film forming procedure, reduced charge carrier surface trap density, reduced charge carrier recombination probability.
Three, polar solvent has promoted being vertically separated of PEDOT:PSS thin layer, has effectively increased carrier transport efficiency, has increased the short-circuit current density of device.
Brief description of the drawings
Fig. 1 is the transoid organic thin film solar cell structure that a kind of polarity resilient coating involved in the present invention is modified, be followed successively by from top to bottom: 1 represents substrate, 2 represent transparent conductive cathode ITO, 3 represent cathode buffer layer, 4 represent photoactive layer, 5 represent anode buffer layer, and 6 represent polarity resilient coating, and 7 represent metal anode.
Embodiment:
Below in conjunction with drawings and Examples, the invention will be further described.
Technical scheme of the present invention is to provide the transoid organic thin film solar cell that a kind of polarity resilient coating is modified, as shown in Figure 1, this solar cell adopts transoid battery structure, be followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, polarity resilient coating, metal anode; Described polarity resilient coating mass percent consists of: N, dinethylformamide 93～97%, poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS) 3～7%, polarity buffer layer thickness is 1～10nm.Described anode buffer layer material is for gathering (3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS), and described anode buffer layer thickness is 15～50nm; Described photoactive layer is mixed with and is formed by electron donor material P3HT and electron acceptor material PCBM, and described P3HT:PCBM mixed solution mass component is than being 1:20～5:1, and described solution concentration is 1～20mg/ml, and described photoactive layer thickness is 50～300nm; Described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, described cathode buffer layer thickness is 1～20nm; Described metal anode material is Ag, Al or Cu, and thickness of thin layer is 100～300nm; Described backing material is glass or transparent polymer, described transparent polymer material comprise polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
Embodiment 1(control group):
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.56V, short circuit current (J sC)=8.2mA/cm 2, fill factor, curve factor (FF)=0.53, photoelectric conversion efficiency (PCE)=2.43%.
Embodiment 2:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 93%, PEODT:PSS7%, 5000rpm, 60s, 5nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.59V, short circuit current (J sC)=9.43mA/cm 2, fill factor, curve factor (FF)=0.61, photoelectric conversion efficiency (PCE)=3.39%.
Embodiment 3:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 95%, PEODT:PSS5%, 5000rpm, 60s, 5nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.61V, short circuit current (J sC)=9.66mA/cm 2, fill factor, curve factor (FF)=0.57, photoelectric conversion efficiency (PCE)=3.36%.
Embodiment 4:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 95%, PEODT:PSS5%, 5000rpm, 50s, 7nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=10.2mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=3.43%.
Embodiment 5:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 93%, PEODT:PSS7%, 5000rpm, 40s, 10nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.60V, short circuit current (J sC)=10.3mA/cm 2, fill factor, curve factor (FF)=0.62, photoelectric conversion efficiency (PCE)=3.83%.
Embodiment 6:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); On anode buffer layer, rotation spray applies polarity resilient coating (DMF 95%, PEODT:PSS5%, 18cm, 2ml/min, 6nm); Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=9.57mA/cm 2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=3.33%.
Embodiment 7:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface rotary coating ZnO (5000rpm, 40s, 15nm), and formed film is toasted to (200 DEG C, 60min); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 50s, 3500nm); On anode buffer layer, polarity resilient coating (DMF 93%, PEODT:PSS7%, 16cm, 2.8ml/min, 8nm) is covered in spraying; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.57V, short circuit current (J sC)=10.31mA/cm 2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=3.53%.
Embodiment 8:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface evaporation BCP (5nm); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 95%, PEODT:PSS5%, 18cm, 2.8ml/min, 8nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=9.03mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=3.04%.
Embodiment 9:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; At transparent conductive cathode ITO surface evaporating Al q 3(5nm) prepare cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 96%, PEODT:PSS4%, 16cm, 2.8ml/min, 8nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on polarity resilient coating.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=8.65mA/cm 2, fill factor, curve factor (FF)=0.56, photoelectric conversion efficiency (PCE)=2.81%.
Embodiment 10:
The substrate being made up of transparent substrates and transparent conductive cathode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare cathode buffer layer at transparent conductive cathode ITO surface evaporation BCP (3nm); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 DEG C, 5min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000rpm, 60s, 30nm); Rotary coating polarity resilient coating (DMF 95%, PEODT:PSS5%, 18cm, 2.8ml/min, 8nm) on anode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5min); Evaporation metal anode A g (100nm) on anode buffer layer.Under standard test condition: AM1.5,100mW/cm 2, record the open circuit voltage (V of device oC)=0.58V, short circuit current (J sC)=8.31mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=2.80%.
Table 1 organic thin film solar cell device photovoltaic performance parameter (BL is polarity resilient coating)
Table 2 device series resistance (RS) and sheet resistance in parallel (RSq) parameter list (part embodiment) (BL is polarity resilient coating)
As can be seen from the above table: the solar cell of modifying through polar solvent (is the solar cell that embodiment 2 is prepared from, structure is: ITO/ZnO/P3HT:PCBM/PEDOT:PSS/BL/Ag) (be the solar cell that embodiment 1 is prepared from than the solar cell that does not have polar solvent to modify, structure is: ITO/ZnO/P3HT:PCBM/PEDOT:PSS/Ag), series resistance is less, parallel resistance is larger, the fill factor, curve factor of what prepared by embodiment 2 the have organic thin film solar cell that polar solvent modifies is larger, the transformation efficiency of this solar cell is higher.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.

Claims (6)

1. the transoid organic thin film solar cell that polarity resilient coating is modified, is characterized in that: this solar cell adopts reciprocal form structure, is followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, polarity resilient coating, metal anode; Described polarity resilient coating mass percent consists of: N, dinethylformamide 93～97 %, poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS) 3～7 %, polarity buffer layer thickness is 1～10 nm.
2. the transoid organic thin film solar cell that a kind of polarity resilient coating according to claim 1 is modified, it is characterized in that: described anode buffer layer material is poly-(3,4-Ethylenedioxy Thiophene)-gathering (styrene sulfonic acid) (PEDOT:PSS), anode buffer layer thickness is 15～50 nm.
3. the transoid organic thin film solar cell that a kind of polarity resilient coating according to claim 1 is modified, it is characterized in that: described photoactive layer is mixed with and is formed by electron donor material P3HT and electron acceptor material PCBM, P3HT:PCBM mixed solution mass component is than being 1:20～5:1, solution concentration is 1～20 mg/ml, and photoactive layer thickness is 50～300 nm.
4. the transoid organic thin film solar cell that a kind of polarity resilient coating according to claim 1 is modified, is characterized in that: described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, cathode buffer layer thickness range is 1～20 nm.
5. the transoid organic thin film solar cell that a kind of polarity resilient coating according to claim 1 is modified, is characterized in that: described metal anode material is one or more in Ag, Al or Cu, and metal anode thickness is 100～300 nm.
6. the transoid organic thin film solar cell that a kind of polarity resilient coating according to claim 1 is modified, it is characterized in that: described backing material is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
CN201410159500.XA 2014-04-21 2014-04-21 Trans-organic thin film solar cell modified by polarity buffer layer Pending CN103943779A (en)

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