CN103943726B - The preparation method of N-type solar cell and the preparation method of height knot thereof - Google Patents
The preparation method of N-type solar cell and the preparation method of height knot thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 334
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 331
- 239000010703 silicon Substances 0.000 claims abstract description 330
- 238000009792 diffusion process Methods 0.000 claims abstract description 167
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 166
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 166
- 239000011574 phosphorus Substances 0.000 claims abstract description 166
- 238000000034 method Methods 0.000 claims abstract description 68
- 238000012360 testing method Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 229910019142 PO4 Inorganic materials 0.000 claims description 8
- 230000001788 irregular Effects 0.000 claims description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 8
- 239000010452 phosphate Substances 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004220 aggregation Methods 0.000 claims description 3
- 230000002776 aggregation Effects 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 10
- 238000012544 monitoring process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of preparation method of N-type solar cell and the preparation method of height knot thereof.The preparation method of the height knot of this N-type solar cell comprises: set up the relational model between the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip; According to for the N-type silicon chip surface phosphorus diffusion concentration of preparation, contrast relationship model, finds the preset value of the square resistance of corresponding P-type silicon sheet; According to the following steps phosphorus diffusion process is carried out to N-type silicon chip: N-type silicon chip and P-type silicon sheet are carried out phosphorus diffusion process by A1 under the same conditions; A2 tests the P-type silicon sheet after phosphorus diffusion process, obtains the square resistance of P-type silicon sheet; The square resistance of the P-type silicon sheet of A3 contrast after phosphorus diffusion process and preset value, if be greater than preset value, then repeat steps A 1 and A2 to the absolute value of difference is between the two less than preset difference value.The method can reduce difficulty and the cost of test, can monitor again during N-type silicon chip is produced the quality just tied.
Description
Technical field
The present invention relates to solar cell and manufacture field, in particular to a kind of preparation method of N-type solar cell and the preparation method of height knot thereof.
Background technology
Solar cell comprises N-type solar cell and P type solar cell.Our common solar cell mainly P type, be doped with a small amount of boron element in pure silicon crystal, and in pure silicon crystal, mix group Ⅴ element (as phosphorus, arsenic, antimony etc.), make it the position replacing silicon atom in lattice, just to define N-type crystal silicon.The impurity mixed in N-type crystal silicon provides the electronic carrier of electronegative (Negative), claims them to be donor impurity or N-shaped impurity, and how sub free electron is, hole is few son, mainly leans on free electron conduction.
N-type crystal silicon solar batteries, compared with P type crystal silicon solar batteries, has the advantage of high efficiency, low cost, is a kind of trend of solar cell development.N-type crystal silicon solar batteries manufacturing process comprise phosphorus diffusion and boron spread two diffusion processes, phosphorus diffusion object be formation cell back field, the i.e. negative pole of battery.The object of boron diffusion forms anode, and two diffusion processes are all the core procedures that N-type solar cell makes, therefore in manufacturing process, often need to adopt some efficiently method monitor this two steps.
In P type crystal silicon solar batteries makes, monitoring diffusion usually adopts the method taking a sample test square resistance, and this method is not only quick but also well can react the quality of PN junction.But due to the particularity of N-type crystal silicon material, can't PN junction be formed after the diffusion of its phosphorus, also just can not measure square resistance.Surperficial phosphorus doping density after the diffusion of the present test of the method mainly through employing ECV (electrochemical capacitance-voltage method) phosphorus monitors the n of the rear formation of phosphorus diffusion
+the quality of/n height knot.Although the phosphorus doping density of test surfaces can monitor n
+the quality of/n height knot, but adopt the ECV testing time longer (every built-in testing is not less than 1 hour) to be unfavorable for detecting diffusion effect in time, and also the method cost of this test concentrations is high, is unfavorable for large-scale production.Therefore, be badly in need of setting up a kind of low cost, more quickly monitoring N-type crystal silicon solar batteries phosphorus and diffuse to form n
+the method that/n height knot is good and bad.
Summary of the invention
The present invention aims to provide a kind of preparation method of N-type solar cell and the preparation method of height knot thereof, can not reflect n in time to solve existing detection method time length
+the problem that/n height knot is good and bad.
To achieve these goals, according to an aspect of the present invention, provide the preparation method of a kind of N-type solar cell height knot, this preparation method comprises the following steps: set up the relational model between the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip; According to for preparation N-type solar cell in silicon chip surface phosphorus diffusion concentration, contrast relationship model, finds the preset value of the square resistance of corresponding P-type silicon sheet; According to following steps, phosphorus diffusion process is carried out to form height knot in N-type silicon chip to N-type silicon chip: N-type silicon chip and P-type silicon sheet are carried out phosphorus diffusion process by A1 under the same conditions; A2 tests the P-type silicon sheet after phosphorus diffusion process, obtains the square resistance of P-type silicon sheet; The square resistance of the P-type silicon sheet of A3 contrast after phosphorus diffusion process and preset value, if the square resistance of the P-type silicon sheet after phosphorus diffusion process is greater than preset value, then repeat steps A 1 and A2 to the absolute value of difference is between the two less than preset difference value.
Further, the method for above-mentioned opening relationships model is as follows: B1 by P-type silicon sheet and N-type silicon chip at identical conditions, carries out phosphorus diffusion process, and measures the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip after phosphorus diffusion process; B2 repeats step B1, by changing phosphorus diffusion process condition, measures the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip under different phosphate DIFFUSION TREATMENT condition; The square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip under different phosphate DIFFUSION TREATMENT condition in B3 aggregation step B2, and set up the relational model between the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip.
Further, in above-mentioned steps B1, form at least 3 group parallel process groups, often organize in parallel process group and include P-type silicon sheet and N-type silicon chip, at identical conditions, respectively phosphorus diffusion process is carried out to each group of parallel process group, calculate average square resistance between the average square resistance of P-type silicon sheet in each group and the group of each group P-type silicon sheet respectively, calculate average surface phosphorus diffusion concentration between the average surface phosphorus diffusion concentration of N-type silicon chip in each group and the group of each group N-type silicon chip respectively; In step B3, average surface phosphorus diffusion concentration opening relationships model between average square resistance and each group organizing N-type silicon chip between the group according to each group of P-type silicon sheet.
Further, 3 ~ 8 groups of parallel process groups are formed in above-mentioned steps B1.
Further, in above-mentioned steps B1, each parallel process group comprises one group of N-type silicon chip, and at least 3 the P-type silicon sheets be arranged at random between one group of N-type silicon chip, after phosphorus diffusion process is carried out to each group of parallel process group, take out often each P-type silicon sheet in group, calculate the average square resistance of P-type silicon sheet in the square resistance of these P-type silicon sheets and group, according to average square resistance between the average square resistance of P-type silicon sheet in group and the group of each group P-type silicon sheet; And N-type silicon chip adjacent with P-type silicon sheet in taking out every group, calculate the average surface phosphorus diffusion concentration of N-type silicon chip in the surperficial phosphorus diffusion concentration of these N-type silicon chip and group, average surface phosphorus diffusion concentration between the group calculating N-type silicon chip in each group according to the average surface phosphorus diffusion concentration of N-type silicon chip in group.
Further, 3 ~ 5 P-type silicon sheets are provided with in above-mentioned each parallel process group.
Further, in the step of above-mentioned formation height knot in N-type silicon chip, in steps A 1, one group of N-type silicon chip is set, and between one group of N-type silicon chip, at least 3 P-type silicon sheets is set at random, carry out phosphorus diffusion process under the same conditions; In steps A 2, take out each P-type silicon sheet, and respectively each P-type silicon sheet is tested, obtain the square resistance of each P-type silicon sheet, calculate the average square resistance of P-type silicon sheet; In steps A 3, the average square resistance of contrast P-type silicon sheet and preset value.
Further, 3 ~ 5 P-type silicon sheets are set in above-mentioned steps A1.
Further, the square resistance of aforementioned p-type silicon chip adopts four point probe resistivity tester to obtain, and the surperficial phosphorus diffusion concentration of above-mentioned N-type silicon chip adopts electrochemical capacitance-voltage method to obtain.
According to a further aspect in the invention, provide a kind of preparation method of N-type solar cell, this preparation method comprises the step of making herbs into wool, phosphorus diffusion, boron diffusion, chemical cleaning, double-sided coating, the positive backplate of printing and sintering, wherein, the step of phosphorus diffusion adopts the preparation method of above-mentioned N-type solar cell height knot.
Apply the preparation method of a kind of N-type solar cell of technical scheme of the present invention and the preparation method of height knot thereof.By introducing P-type silicon sheet in N-type silicon chip phosphorus diffusing step, and utilize the relational model set up between the phosphorus diffusion concentration on the square resistance of P-type silicon sheet and N-type silicon chip surface, just the square resistance by monitoring the P-type silicon sheet under the same terms reflects the state of the phosphorus diffusion concentration on N-type silicon chip surface indirectly, thus the quality of instant reflection N-type silicon chip height knot.This preparation method not only reduces difficulty and the cost of test, and substantially reduces the time of test, can monitor n in time, quickly on the production line of N-type battery slice
+the quality of/n height knot.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the structure flow chart of the relational model between the square resistance of the P-type silicon sheet provided according to embodiments of the invention and the phosphorus diffusion concentration on N-type silicon chip surface; And
Fig. 2 shows the relational model between the square resistance of the P-type silicon sheet provided according to embodiments of the invention and the phosphorus diffusion concentration on N-type silicon chip surface.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the present invention in detail in conjunction with the embodiments.
In a kind of typical execution mode of the present invention, provide the preparation method of a kind of N-type solar cell height knot, this preparation method comprises the following steps: set up the relational model between the square resistance of P-type silicon sheet and N-type silicon chip surface phosphorus diffusion concentration; According to for silicon chip surface phosphorus diffusion concentration in the N-type solar cell of preparation, contrast above-mentioned relation model, finds the square resistance of corresponding P-type silicon sheet, obtains preset value; According to following steps, phosphorus diffusion process is carried out to form height knot in N-type silicon chip to N-type silicon chip: A1, N-type silicon chip and P-type silicon sheet are carried out phosphorus diffusion process under the same conditions; A2, the P-type silicon sheet after phosphorus diffusion process to be tested, obtain the square resistance of aforementioned p-type silicon chip; A3, the square resistance contrasting above-mentioned P-type silicon sheet after phosphorus diffusion process and above-mentioned preset value, if the square resistance of above-mentioned P-type silicon sheet after phosphorus diffusion process is greater than above-mentioned preset value, then repeat steps A 1 and A2 to the absolute value of difference is between the two less than preset difference value.
Above-mentioned preparation method of the present invention, by introducing P-type silicon sheet in N-type silicon chip phosphorus diffusing step, and utilize the relational model set up between the phosphorus diffusion concentration on the square resistance of P-type silicon sheet and N-type silicon chip surface, just the square resistance by monitoring the P-type silicon sheet under the same terms reflects the state of the phosphorus diffusion concentration on N-type silicon chip surface indirectly, thus the quality of instant reflection N-type silicon chip height knot.This preparation method not only reduces difficulty and the cost of test, and substantially reduces the time of test, can prepare the quality of PN junction on the production line of N-type battery slice in time, quickly.
As described above, utilize in above-mentioned preparation method of the present invention, N-type silicon chip surface phosphorus diffusion concentration can be prepared rapidly.In the present invention, preferably institute for preparation N-type silicon chip surperficial phosphorus diffusion concentration value corresponding to the square resistance of P-type silicon sheet between 30 ohm ~ 60 ohm.Select the square resistance of P-type silicon sheet in above-mentioned scope, relatively accurate to the phosphorus diffusion concentration value instruction of N-type silicon chip surface.
Above-mentioned N-type silicon chip of the present invention diffuses to form in the step of height knot through phosphorus, repeats steps A 1 and A2 to the absolute value of difference is between the two less than preset difference value.Wherein, above-mentioned preset difference value can need to determine according to technique, is preferably 0.5 ohm.Square resistance after being spread by the phosphorus of P-type silicon sheet in actual production process and the control errors between default square resistance are in above-mentioned scope, there is not significant difference between the surperficial phosphorus diffusion concentration value of the N-type silicon chip that P-type silicon sheet can be made to reflect and actual concentrations value, the surperficial phosphorus diffusion concentration value of the N-type silicon chip of P-type silicon sheet namely in coincidence statistics meaning reflection with the surperficial phosphorus of N-type silicon chip to spread actual concentrations value consistent.Above-mentioned preset difference value is more preferably less than 0.3 ohm, square resistance after being spread by the phosphorus of P-type silicon sheet and the control errors between default square resistance are in above-mentioned scope, and the surperficial phosphorus diffusion concentration value of the N-type silicon chip that P-type silicon sheet is reflected can more close to the surperficial phosphorus diffusion actual concentrations value of N-type silicon chip.
In above-mentioned preparation method of the present invention, the method setting up above-mentioned relation model is as follows: B1, by P-type silicon sheet and N-type silicon chip at identical conditions, carry out phosphorus diffusion process, and measure square resistance and the N-type silicon chip surface phosphorus diffusion concentration of P-type silicon sheet after phosphorus diffusion process; B2, repeating step B1, by changing phosphorus diffusion process condition, measuring square resistance and the N-type silicon chip surface phosphorus diffusion concentration of P-type silicon sheet under different phosphate DIFFUSION TREATMENT condition; The square resistance of P-type silicon sheet and N-type silicon chip surface phosphorus diffusion concentration under different phosphate DIFFUSION TREATMENT condition in B3, aggregation step B2, and set up the above-mentioned relation model between the square resistance of P-type silicon sheet and N-type silicon chip surface phosphorus diffusion concentration.
Above-mentioned preparation method of the present invention, when setting up above-mentioned relation model, preferably adopts and P-type silicon sheet and N-type silicon chip is carried out phosphorus diffusion process, at identical conditions to reduce human error as far as possible.Repeat the phosphorus diffusion concentration value that step B1 can obtain the N-type silicon chip surface when the square resistance of different P-type silicon sheet, thus by the phosphorus diffusion concentration value on the square resistance of many groups P-type silicon sheet that obtains and many group N-type silicon chip surfaces, thus be convenient to the relational model that draws therebetween.
In the typical embodiment of one of the present invention, in above-mentioned steps B1, form at least 3 group parallel process groups, often organize in above-mentioned parallel process group and include P-type silicon sheet and N-type silicon chip, at identical conditions, respectively phosphorus diffusion process is carried out to each group of parallel process group, calculate average square resistance between the average square resistance of P-type silicon sheet in each group and the group of each group P-type silicon sheet respectively, calculate average surface phosphorus diffusion concentration between the average surface phosphorus diffusion concentration of N-type silicon chip in each group and the group of each group N-type silicon chip respectively; In above-mentioned steps B3, set up above-mentioned relation model according to average surface phosphorus diffusion concentration between the group of average square resistance and above-mentioned each group of N-type silicon chip between the group of above-mentioned each group of P-type silicon sheet.
In above-mentioned steps B1 of the present invention, form at least 3 group parallel process groups, and calculate the average square resistance between each group of parallel process group by the average square resistance of P-type silicon sheet in each parallel process group, reduce the error of the square resistance recorded in each phosphorus diffusion cycles technique further.In like manner, the error-reduction of the surperficial phosphorus diffusion concentration of the N-type silicon chip recorded also can be made by average surface phosphorus diffusion concentration between the group of the average surface phosphorus diffusion concentration and each group N-type silicon chip that calculate N-type silicon chip in each group.
In above-mentioned steps B1 of the present invention, more preferably form 3 ~ 8 groups of parallel process groups.Parallel process group is more, and the error between the numerical value obtained is less, and the time of cost is also more relatively.In a kind of most preferred embodiment of the present invention, in above-mentioned steps B1, form 5 groups of parallel process groups, reduce error equally, also save time.
In another kind of preferred embodiment of the present invention, in above-mentioned steps B1, above-mentioned each parallel process group comprises one group of N-type silicon chip, and at least 3 the P-type silicon sheets be arranged at random between one group of above-mentioned N-type silicon chip, after phosphorus diffusion process is carried out to each group of parallel process group, take out often each P-type silicon sheet in group, calculate the average square resistance of P-type silicon sheet in the square resistance of these P-type silicon sheets and group, according to average square resistance between the average square resistance of P-type silicon sheet and the group of above-mentioned each group of P-type silicon sheet in above-mentioned group; And N-type silicon chip adjacent with aforementioned p-type silicon chip in taking out every group, calculate the average surface phosphorus diffusion concentration of N-type silicon chip in the surperficial phosphorus diffusion concentration of these N-type silicon chip and group, according to average surface phosphorus diffusion concentration between the group of N-type silicon chip during the average surface phosphorus diffusion concentration of N-type silicon chip calculates above-mentioned each group in above-mentioned group.
In above-mentioned B1 step of the present invention, spread the difference of container volume or production object according to phosphorus, in actual production, select the silicon chip of suitable quantity to carry out the preparation of height knot as one group.In the present invention, preferably 400 ~ 500 N-type silicon chip are one group.By irregular setting at least 3 P-type silicon sheets in one group of N-type silicon chip in above-mentioned each parallel process group, the error caused by single P-type silicon sheet can be reduced, make the follow-up average square resistance recording P-type silicon sheet between each group of neutralization group all there is less deviation, thus make the square resistance of the P-type silicon sheet finally obtained have representativeness on statistical significance.In like manner, above-mentioned set-up mode also makes the numerical value of the N-type silicon chip surface phosphorus diffusion concentration obtained have representativeness on statistical significance.Thus make relational model between the square resistance of P-type silicon sheet and N-type silicon chip surface phosphorus diffusion concentration closer to truly, carrying out the quality that can indicate height knot in the preparation of actual N-type solar cell height knot more accurately according to above-mentioned relation model.
In above-mentioned steps B1 of the present invention, include but not limited to arrange 3 ~ 5 aforementioned p-type silicon chips by each above-mentioned parallel process group.Arrange 3 ~ 5 aforementioned p-type silicon chips can not only fast, but also the square resistance of P-type silicon sheet can be reflected exactly.
Formed in the steps A 1 of height knot in N-type silicon chip the above-mentioned of above-mentioned preparation method of the present invention, according to one group of N-type silicon chip that manufacture of solar cells technique is arranged, and at least 3 P-type silicon sheets of irregular setting between one group of above-mentioned N-type silicon chip, carry out phosphorus diffusion process under the same conditions; In above-mentioned steps A2, take out each aforementioned p-type silicon chip, and respectively each aforementioned p-type silicon chip is tested, obtain the square resistance of each aforementioned p-type silicon chip, calculate the average square resistance of P-type silicon sheet; In above-mentioned steps A3, the average square resistance of contrast aforementioned p-type silicon chip and above-mentioned preset value.
Formed in the step of height knot in above-mentioned N-type silicon chip of the present invention, adopt above-mentioned steps can indicate the phosphorus diffusion concentration on N-type silicon chip surface more accurately, to facilitate adjustment, form the phosphorus diffusion concentration on the N-type silicon chip surface be applicable to, thus complete the preparation of height knot.
3 ~ 5 aforementioned p-type silicon chips are set in above-mentioned steps A1 of the present invention, identical with the meaning that parallel process group each in above-mentioned steps B1 always arranges 3 ~ 5 P-type silicon sheets, also be the square resistance making can reflect quickly and accurately in this step P-type silicon sheet, and then the surperficial phosphorus diffusion concentration value of N-type silicon chip can be reflected more realistically.
In above-mentioned preparation method of the present invention, any instrument that can measure the square resistance of aforementioned p-type silicon chip is all applicable to the present invention.In the present invention, the square resistance of preferred aforementioned p-type silicon chip adopts four point probe resistivity tester to obtain, and four-point probe has intuitively, measurement data is fast, precision is high, the advantage stablized.
In like manner, in above-mentioned preparation method of the present invention, any can measure the surperficial phosphorus diffusion concentration of above-mentioned N-type silicon chip of the present invention method or instrument be all applicable to the present invention, such as, adopt electrochemical capacitance-voltage method or secondary ion mass spectrometry to measure.In the present invention, the assay method of the surperficial phosphorus diffusion concentration of preferred above-mentioned N-type silicon chip adopts electrochemical capacitance-voltage method.Electrochemical capacitance-voltage method has good controllability and repeatability.
In the typical execution mode of another kind of the present invention, provide a kind of preparation method of N-type solar cell, comprise the step of making herbs into wool, phosphorus diffusion, boron diffusion, chemical cleaning, double-sided coating, the positive backplate of printing and sintering, the step of above-mentioned phosphorus diffusion adopts the preparation method of above-mentioned N-type solar cell height knot.By utilizing the preparation method of above-mentioned N-type solar cell height knot, the preparation process of N-type solar cell of the present invention can monitor the quality of height knot in time, ensure normal, the fast turn-around of N-type manufacture of solar cells line, thus improve production efficiency and the quality of N-type solar cell.
Beneficial effect of the present invention is further illustrated below in conjunction with specific embodiment.
The structure of relational model:
The method setting up described relational model is as follows:
Form 5 groups of parallel process groups, often organize in parallel process group and one group of (400) N-type silicon chip is set according to manufacture of solar cells technique, simultaneously irregular between this group N-type silicon chip 5 P-type silicon sheets are set, carry out phosphorus diffusion process, to often organizing after parallel process group carries out phosphorus diffusion process, take out often each P-type silicon sheet in group, measure the square resistance of these P-type silicon sheets and the average square resistance of P-type silicon sheet in calculating group, average square resistance between the group respectively organizing P-type silicon sheet according to the average square resistance calculations of P-type silicon sheet in each group of group; And N-type silicon chip adjacent with P-type silicon sheet in taking out every group, measure the surperficial phosphorus diffusion concentration of these N-type silicon chip and the average surface phosphorus diffusion concentration of N-type silicon chip in calculating group, according to average surface phosphorus diffusion concentration between the group of N-type silicon chip during the average surface phosphorus diffusion concentration of N-type silicon chip calculates described each group in described group.
Repeating above-mentioned steps, by changing phosphorus diffusion process condition, measuring square resistance and the N-type silicon chip surface phosphorus diffusion concentration of P-type silicon sheet under different phosphate DIFFUSION TREATMENT condition;
As shown in Figure 1, between the group gathering P-type silicon sheet under different phosphate DIFFUSION TREATMENT condition in above-mentioned steps square resistance and N-type silicon chip group between surperficial phosphorus diffusion concentration, set up the relational model between the square resistance of P-type silicon sheet and N-type silicon chip surface phosphorus diffusion concentration, relational model as shown in Figure 2.
Embodiment 1
According to for silicon chip surface phosphorus diffusion concentration 5.0E+20 in the N-type solar cell of preparation, contrast above-mentioned relation model, finds the square resistance of corresponding P-type silicon sheet, obtains preset value 50 ohm;
According to following steps, phosphorus diffusion process is carried out to form height knot in N-type silicon chip to N-type silicon chip:
According to one group of (400) N-type silicon chip that manufacture of solar cells technique is arranged, irregular between N-type silicon chip 3 P-type silicon sheets are set, carry out phosphorus diffusion process under the same conditions;
Take out each P-type silicon sheet, and respectively each P-type silicon sheet is tested, obtain the square resistance of each P-type silicon sheet, calculate the average square resistance of P-type silicon sheet;
The average square resistance of contrast P-type silicon sheet and preset value, if the average square resistance of the P-type silicon sheet recorded is greater than 50 ohm, repeat above-mentioned phosphorus diffusing step, until the square resistance of P-type silicon sheet after phosphorus diffusion process is 49.5 ohm.
Test: adopt electrochemical capacitance-voltage method to measure silicon chip surface phosphorus diffusion concentration 5.1E+20 in N-type; As can be seen here, silicon chip surface phosphorus diffusion concentration and employing electrochemical capacitance-voltage method in said method N-type of the present invention is adopted to measure silicon chip surface phosphorus diffusion concentration in N-type substantially identical.
Embodiment 2
According to for silicon chip surface phosphorus diffusion concentration 1.0E+21 in the N-type solar cell of preparation, contrast above-mentioned relation model, finds the square resistance of corresponding P-type silicon sheet, obtains preset value 35 Europe;
According to following steps, phosphorus diffusion process is carried out to form height knot in N-type silicon chip to N-type silicon chip:
According to one group of (500) N-type silicon chip that manufacture of solar cells technique is arranged, irregular between N-type silicon chip 4 P-type silicon sheets are set, carry out phosphorus diffusion process under the same conditions;
Take out each P-type silicon sheet, and respectively each P-type silicon sheet is tested, obtain the square resistance of each P-type silicon sheet, calculate the average square resistance of P-type silicon sheet;
The average square resistance of contrast P-type silicon sheet and preset value, if the average square resistance of the P-type silicon sheet recorded is greater than 35 ohm, repeat above-mentioned phosphorus diffusing step, until the square resistance of P-type silicon sheet after phosphorus diffusion process is 34.9 ohm.
Test: adopt electrochemical capacitance-voltage method to measure silicon chip surface phosphorus diffusion concentration 1.0E+21 in N-type; As can be seen here, silicon chip surface phosphorus diffusion concentration and employing electrochemical capacitance-voltage method in said method N-type of the present invention is adopted to measure silicon chip surface phosphorus diffusion concentration in N-type closest.
Embodiment 3
According to for silicon chip surface phosphorus diffusion concentration 8.5E+20 in the N-type solar cell of preparation, contrast above-mentioned relation model, finds the square resistance of corresponding P-type silicon sheet, obtains preset value 40 Europe;
According to following steps, phosphorus diffusion process is carried out to form height knot in N-type silicon chip to N-type silicon chip:
According to one group of (400) N-type silicon chip that manufacture of solar cells technique is arranged, irregular between N-type silicon chip 5 P-type silicon sheets are set, carry out phosphorus diffusion process under the same conditions;
Take out each P-type silicon sheet, and respectively each P-type silicon sheet is tested, obtain the square resistance of each P-type silicon sheet, calculate the average square resistance of P-type silicon sheet;
The average square resistance of contrast P-type silicon sheet and preset value, if the average square resistance of the P-type silicon sheet recorded is greater than 40 ohm, repeat above-mentioned phosphorus diffusing step, until the square resistance of P-type silicon sheet after phosphorus diffusion process is 40.3 ohm.
Test: adopt electrochemical capacitance-voltage method to measure silicon chip surface phosphorus diffusion concentration 8.55E+20 in N-type; As can be seen here, silicon chip surface phosphorus diffusion concentration and employing electrochemical capacitance-voltage method in said method N-type of the present invention is adopted to measure silicon chip surface phosphorus diffusion concentration in N-type substantially identical.
As can be seen from the above description, the above embodiments of the present invention apply technical scheme of the present invention, by introducing P-type silicon sheet in N-type silicon chip phosphorus diffusing step, and utilize the relational model set up between the phosphorus diffusion concentration on the square resistance of P-type silicon sheet and N-type silicon chip surface, just by the square resistance of the P-type silicon sheet under monitoring the same terms, indirectly reflect the state of the phosphorus diffusion concentration on N-type silicon chip surface, thus the quality of instant reflection N-type silicon chip height knot.This preparation method not only reduces difficulty and the cost of test, and substantially reduces the time of test, can monitor n in time, quickly on the production line of N-type battery slice
+the quality of/n height knot.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a preparation method for N-type solar cell height knot, it is characterized in that, described preparation method comprises the following steps:
Set up the relational model between the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip; According to for preparation N-type solar cell in silicon chip surface phosphorus diffusion concentration, contrast described relational model, find the preset value of the square resistance of corresponding P-type silicon sheet;
According to following steps, phosphorus diffusion process is carried out to form height knot in described N-type silicon chip to N-type silicon chip:
N-type silicon chip and P-type silicon sheet are carried out phosphorus diffusion process by A1 under the same conditions;
A2 tests the P-type silicon sheet after phosphorus diffusion process, obtains the square resistance of described P-type silicon sheet;
A3 contrasts the square resistance of described P-type silicon sheet after phosphorus diffusion process and described preset value, if the square resistance of described P-type silicon sheet after phosphorus diffusion process is greater than described preset value, then repeat steps A 1 and A2 to the absolute value of difference is between the two less than preset difference value;
The method setting up described relational model is as follows:
B1 by P-type silicon sheet and N-type silicon chip at identical conditions, carries out phosphorus diffusion process, and measures the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip after phosphorus diffusion process;
B2 repeats step B1, by changing phosphorus diffusion process condition, measures the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip under different phosphate DIFFUSION TREATMENT condition;
The square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip under different phosphate DIFFUSION TREATMENT condition in B3 aggregation step B2, and set up the described relational model between the square resistance of P-type silicon sheet and the surperficial phosphorus diffusion concentration of N-type silicon chip.
2. preparation method according to claim 1, is characterized in that,
In described step B1, form at least 3 group parallel process groups, often organize in described parallel process group and include P-type silicon sheet and N-type silicon chip, at identical conditions, respectively phosphorus diffusion process is carried out to each group of parallel process group, calculate average square resistance between the average square resistance of P-type silicon sheet in each group and the group of each group P-type silicon sheet respectively, calculate average surface phosphorus diffusion concentration between the average surface phosphorus diffusion concentration of N-type silicon chip in each group and the group of each group N-type silicon chip respectively;
In described step B3, set up described relational model according to average surface phosphorus diffusion concentration between the group of average square resistance and described each group of N-type silicon chip between the group of described each group of P-type silicon sheet.
3. preparation method according to claim 2, is characterized in that, forms 3 ~ 8 groups of parallel process groups in described step B1.
4. preparation method according to claim 2, it is characterized in that, in described step B1, each described parallel process group comprises one group of N-type silicon chip that conveniently technique is arranged, and irregular at least 3 the P-type silicon sheets be arranged on described in a group between N-type silicon chip, after phosphorus diffusion process is carried out to each group of parallel process group, take out often each P-type silicon sheet in group, calculate the average square resistance of P-type silicon sheet in the square resistance of these P-type silicon sheets and group, according to average square resistance between the average square resistance of P-type silicon sheet and the group of described each group of P-type silicon sheet in described group; And N-type silicon chip adjacent with described P-type silicon sheet in taking out every group, calculate the average surface phosphorus diffusion concentration of N-type silicon chip in the surperficial phosphorus diffusion concentration of these N-type silicon chip and group, according to average surface phosphorus diffusion concentration between the group of N-type silicon chip during the average surface phosphorus diffusion concentration of N-type silicon chip calculates described each group in described group.
5. preparation method according to claim 2, is characterized in that, is provided with 3 ~ 5 described P-type silicon sheets in each described parallel process group.
6. preparation method according to claim 1, is characterized in that, in the step of described formation height knot in N-type silicon chip,
In described steps A 1, the one group of N-type silicon chip arranged according to manufacture of solar cells technique, and at irregular setting at least 3 P-type silicon sheets between N-type silicon chip described in a group, carry out phosphorus diffusion process under the same conditions;
In described steps A 2, take out each described P-type silicon sheet, and respectively each described P-type silicon sheet is tested, obtain the square resistance of each described P-type silicon sheet, calculate the average square resistance of P-type silicon sheet;
In described steps A 3, contrast the average square resistance of described P-type silicon sheet and described preset value.
7. preparation method according to claim 6, is characterized in that, arranges 3 ~ 5 described P-type silicon sheets in described steps A 1.
8. preparation method according to claim 1, is characterized in that, the square resistance of described P-type silicon sheet adopts four point probe resistivity tester to obtain, and the surperficial phosphorus diffusion concentration of described N-type silicon chip adopts electrochemical capacitance-voltage method to obtain.
9. the preparation method of a N-type solar cell, comprise the step of making herbs into wool, phosphorus diffusion, boron diffusion, chemical cleaning, double-sided coating, the positive backplate of printing and sintering, it is characterized in that, the step of described phosphorus diffusion adopts the preparation method of the N-type solar cell height knot according to any one of claim 1 to 8.
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| WO2009101107A1 (en) * | 2008-02-15 | 2009-08-20 | Ersol Solar Energy Ag | Method for the production of monocrystalline n-silicon solar cells, and solar cell produced according to such a method |
| CN101635317A (en) * | 2009-05-26 | 2010-01-27 | 珈伟太阳能(武汉)有限公司 | Back aluminium diffused N type solar cell and manufacturing method of back electrode |
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
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