CN103943664B - Image display system - Google Patents
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- CN103943664B CN103943664B CN201410171591.9A CN201410171591A CN103943664B CN 103943664 B CN103943664 B CN 103943664B CN 201410171591 A CN201410171591 A CN 201410171591A CN 103943664 B CN103943664 B CN 103943664B
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Abstract
The present invention discloses a kind of image display system.This image display system includes self-emission display apparatus, and it includes：Substrate and first and second sub-pixel unit being arranged on substrate.Each pixel cell includes：Light-emitting component, power line and electrode.Power line is electrically connected to light-emitting component.Electrode is electrically connected to power line.Second of pixel cell is made up of adjacent to first time pixel cell, the wherein electrode in first and second sub-pixel unit continuous conductive layer, two power lines is electrically connected to each other via continuous conductive layer.
Description
Present specification is the of entitled " image display system " submitted on May 13rd, 2009
200910136730.3 the divisional application of number application for a patent for invention.
Technical field
The present invention relates to a kind of flat-panel screens technology, more particularly to a kind of self-emitting display, wherein utilizing definition
The active layer of thin film transistor (TFT) or the material layer of gate electrode electrically to be connected to the power line of light-emitting component.
Background technology
In recent years, the demand of flat display apparatus quickly increases, for example self-emission display apparatus.Self-emission display apparatus
Generally using Organic Light Emitting Diode (organic light-emitting diode, OLED) as in pixel region be used for image
The light-emitting component of display, such as active array Organic Light Emitting Diode (active matrix OLED, AMOLED) display.
In the sub-pixel array of self-emission display apparatus, each sub-pixel (sub-pixel) unit is generally included：By data wire DL,
Scan line SL, power line PL, switching thin-film transistor SW, driving thin film transistor (TFT) DR, storage capacitors C and light emitting diode D
The sub-pixel element circuit constituted, as shown in Figure 1.
In AMOLED products, in order to reduce pressure drop produced when high current flows through power line, be all as much as possible plus
The width of wide power line.Furthermore, in order to improve the source electrode terminal voltage homogeneity (voltage of each driving thin film transistor (TFT)
Uniformity), it will usually which power line is fabricated to network structure, the electricity of the sub-pixel on different columns in each row of pel array is made
Source line can be electrically connected.
Because the power line of network structure is made with data wire by same metal level, therefore partial network structure
Power line can cross over data wire.Therefore, in circuit design, it is necessary to extra in the power line of network structure and the intersection point of data wire
Make and build bridge (at least containing two contact holes).Consequently, it is possible to which the complexity of circuit layout and technique can be increased.Furthermore, it is netted
Space needed for the power line of structure can limit Pixel Dimensions, make pixel in display resolution (pixel per inch,
Ppi) it can not be lifted.
Therefore, it is necessary to seek a kind of power line structure for OLED display, it can improve voltage homogeneity
Meanwhile, lift resolution of display.
The content of the invention
The embodiment of the present invention provides a kind of image display system.This system includes self-emission display apparatus, and self-luminous is shown
Device includes substrate and first and second sub-pixel unit being arranged on substrate.First time pixel cell includes：First hair
Optical element, the first power line and the first storage capacitors.First power line is electrically connected to the first light-emitting component.First storage
There is electric capacity first electrode to be electrically connected to the first power line.Second of pixel cell adjacent to first time pixel cell, including：
Second light-emitting component, second source line and the second storage capacitors.Second source line is electrically connected to the second light-emitting component.The
There is two storage capacitors second electrode to be electrically connected to second source line, and wherein first and second electrode is by continuous conductive layer institute
Constitute, the first power line is electrically connected to second source line via continuous conductive layer.
Another embodiment of the present invention provides a kind of image display system, and this system includes self-emission display apparatus, self-luminous
Display device includes substrate and first and second sub-pixel unit being arranged on substrate.First time pixel cell includes：The
One light-emitting component, the first power line, the first storage capacitors and the first driving transistor.First power line is electrically connected to first
First metal electrode of light-emitting component and the first storage capacitors.There is first driving transistor the first source doping region to be connected to the
One power line, to drive the first light-emitting component.Second of pixel cell adjacent to first time pixel cell, including：Second lights
Element, second source line, the second storage capacitors and the second driving transistor.Second source line is electrically connected to the second luminous member
Second metal electrode of part and the second storage capacitors.There is second driving transistor the second source doping region to be electrically connected to second
Power line, to drive the second light-emitting component.Wherein, first and second source doping region is made up of continuous conductive layer, makes
One power line is electrically connected to second source line via continuous conductive layer.
Brief description of the drawings
Fig. 1 is the sub-pixel element circuit schematic diagram for showing self-emission display apparatus；
Fig. 2 is to show the signal of the image display system plane with self-emission display apparatus according to embodiments of the present invention
Figure；
Fig. 3 is the diagrammatic cross-section for showing the 3-3 ' lines along along Fig. 2；
Fig. 4 is to show the image display system plane according to another embodiment of the present invention with self-emission display apparatus
Schematic diagram；
Fig. 5 is the diagrammatic cross-section for showing the 5-5 ' lines along along Fig. 4；
Fig. 6 is to show the image display system plane according to another embodiment of the present invention with self-emission display apparatus
Schematic diagram；
Fig. 7 a are the diagrammatic cross-section for showing the 7a-7a ' lines along along Fig. 6；
Fig. 7 b are the diagrammatic cross-section for showing the 7b-7b ' lines along along Fig. 6；And
Fig. 8 is according to another embodiment of the present invention with image display system block schematic diagram to show.
Description of reference numerals
It is known
C~storage capacitors D~light emitting diode
DR~driving thin film transistor (TFT) DL~data wire
PL~power line SL~scan line
SW~switching thin-film transistor
Embodiment
100~substrate, 102~bottom electrode
104~capacitance dielectric layer, 106~Top electrode
107~storage capacitors, 108~insulating barrier
109~driving, 110~power line of thin film transistor (TFT)
111~light-emitting component, 112~data wire
114~scan line, 115~source doping region
200~self-emission display apparatus 200a~first time pixel cell
200b~second of 300~type flat panel display apparatus of pixel cell
400~input block, 500~electronic installation
200c~third time pixel cell D~drain electrode
G~grid P1, P2, P3~conductive plunger S~source electrode
Embodiment
Illustrate the making of the embodiment of the present invention with using below.However, embodiment provided by the present invention can will readily appreciate that
It is merely to illustrate and is made with ad hoc approach and using the present invention, and is not used to limit to the scope of the present invention.
Illustrate image display system according to embodiments of the present invention below.Fig. 2 and Fig. 3 is refer to, wherein Fig. 2 is to show
Image display system floor map with self-emission display apparatus according to embodiments of the present invention, and Fig. 3 is to show edge
The diagrammatic cross-section of 3-3 ' lines in Fig. 2.Self-emission display apparatus 200 includes：Substrate 100 and be arranged on substrate 100 arrange
Into the multiple pixel cell of array.In order to simplify accompanying drawing, two are only shown herein adjacent and to show the first of different mass-tones
Sub-pixel unit 200a and second of pixel cell 200b.Substrate 100 can be made up of glass, quartz or other transparent materials.
Furthermore, typical sub-pixel unit includes：Driving thin film transistor (TFT) (driving TFT) is used to drive light-emitting component, switch
Thin film transistor (TFT) (switching TFT) is used to switch the state of sub-pixel unit, storage capacitors for storing image data, sweeping
Retouching line is used for controlling switch thin film transistor (TFT), data wire for transmitting image data and power line through driving film crystal
Pipe applies a voltage to light-emitting component.
In the present embodiment, first time pixel cell 200a and second of pixel cell 200b include respectively：Power line
110th, data wire 112, scan line 114, storage capacitors 107, driving thin film transistor (TFT) 109, light-emitting component 111 and switch are thin
Film transistor (is not indicated).
Light-emitting component 111, such as Organic Light Emitting Diode (OLED), driving film is electrically connected to by conductive plunger P2
The drain D of transistor 109, then via be electrically connected to driving thin film transistor (TFT) 109 source S conductive plunger P3 and and power supply
Line 110 is electrically connected with.
Storage capacitors 107 include：Bottom electrode 102, Top electrode 106 and the electric capacity between two electrodes 102 and 106
Dielectric layer 104.In the present embodiment, bottom electrode 102 can be made up of semi-conducting material, the polysilicon of such as doping.Top electrode
106 can be made up of metal, for example molybdenum (Mo) or molybdenum alloy.Capacitance dielectric layer 104 can be by silica, silicon nitride or its combination
Constituted.Bottom electrode 102 is electrically connected to drain electrode and the grid G of driving thin film transistor (TFT) 109 of switching thin-film transistor.Again
Person, Top electrode 106 is electrically connected to power line 110 via the conductive plunger P1 in overlying insulating layer 108, as shown in Figure 3.Absolutely
Edge layer 108 can be made up of as protective layer, flatness layer, intermediate layer or its combination silica, silicon nitride or its combination.
In the present embodiment, specifically storage capacitors in first time pixel cell 200a and second of pixel cell 200b
107 Top electrode 106 be made up of continuous conductive layer, such as continuous metal level.Consequently, it is possible to first time pixel cell
200a and second of pixel cell 200b power line 110 can be electric each other via the continuous conductive layer for constituting Top electrode 106
Property connection.Therefore, in sub-pixel cell array, the sub-pixel unit of same row can pass through continuous conductive layer electrically to connect
It is connected to few more than two power line.In other embodiments, the sub-pixel unit of same row, permeable more than two is continuous
Conductive layer and constitute the power line of multigroup electric connection.In embodiment, at least one of continuous conductive layer substantially hangs down
The bearing of trend of straight first time pixel cell 200a and second of pixel cell 200b power line 110.
Data wire 112 positioned at the top of insulating barrier 108 can be formed with power line 110 by patterning same conductive layer, its material
Material includes：Aluminium (Al), molybdenum (Mo), titanium (Ti) or its combination.
Fig. 4 and Fig. 5 is refer to, wherein Fig. 4 fills to show according to another embodiment of the present invention shown with self-luminous
The image display system floor map put, and Fig. 5 is the diagrammatic cross-section for showing the 5-5 ' lines along along Fig. 4, wherein being same as
Fig. 2 and Fig. 3 identicals part is using identical label and the description thereof will be omitted.In the present embodiment, third time pixel cell 200c
It is adjacent with first time pixel cell 200a, and be used to show the mass-tone being same as shown by first time pixel cell 200a.Furthermore,
Top electrode 106 is electrically connected to the drain electrode of switching thin-film transistor and drives the grid G of thin film transistor (TFT) 109, and bottom electrode 102
Power line 110 is electrically connected to via the conductive plunger P3 in overlying insulating layer 108, as shown in Figure 5.Specifically for the first time
The bottom electrode 102 of storage capacitors 107 is made up of continuous conductive layer in pixel cell 200a and second of pixel cell 200b.
In the present embodiment, the bottom electrode 102 of storage capacitors 107 also can be by the continuous conductive layer institute in third time pixel cell 200c
Constitute.Continuous conductive layer includes semi-conducting material, the polysilicon of such as doping.Similarly, first time pixel cell 200a,
Secondary pixel cell 200b and third time pixel cell 200c power line 110 can be led via the continuous of bottom electrode 102 is constituted
Electric layer and be electrically connected to each other.
In sub-pixel cell array, the sub-pixel unit on same row and/or same column can pass through continuous conductive layer and come
It is electrically connected with corresponding power line.In other embodiments, the sub-pixel unit on same row and/or same column, can pass through two
More than continuous conductive layer and constitute it is multigroup have be electrically connected with power line sub-pixel unit.In embodiment, at least
Continuous conductive layer generally vertically first time pixel cell 200a, second of pixel cell 200b and the third time picture of a part
The bearing of trend of plain unit 200c power line 110.
In other embodiments, some power lines 110 can be by constituting the company of Top electrode 106 in sub-pixel cell array
Continuous conductive layer and be electrically connected to each other (as shown in Figures 2 and 3), and some power lines 110 then can be by constituting bottom electrode 102
Continuous conductive layer and be electrically connected to each other (as shown in Figures 4 and 5).
Fig. 6,7a and Fig. 7 b are refer to, wherein Fig. 6 is according to another embodiment of the present invention aobvious with self-luminous to show
The image display system floor map of showing device, and Fig. 7 a are the diagrammatic cross-section and figure for showing the 7a-7a ' lines along along Fig. 6
7b is the diagrammatic cross-section for showing the 7b-7b ' lines along along Fig. 6, wherein being same as Fig. 2 and Fig. 3 identical parts uses identical
Simultaneously the description thereof will be omitted for label.In the present embodiment, the bottom electrode 102 of storage capacitors 107 is made up of semi-conducting material, for example, mix
Miscellaneous polysilicon, and Top electrode 106 is made up of metal, such as molybdenum (Mo) or molybdenum alloy.Top electrode 106 is via overlying insulating layer
Conductive plunger P1 in 108 and be electrically connected to power line 110.Furthermore, driving thin film transistor (TFT) 109 has source doping region
115, it is electrically connected to power line 110 via the conductive plunger P3 in overlying insulating layer 108.
Specifically, thin film transistor (TFT) 109 is driven in first time pixel cell 200a and second of pixel cell 200b
Source doping region 115 is made up of the polysilicon of continuous conductive layer such as doping.In this way, first time pixel cell 200a and
Secondary pixel cell 200b power line 110 can electrically connect each other via the continuous conductive layer for constituting source doping region 115
Connect, as shown in Fig. 6 and 7b.Furthermore, storage capacitors 107 is upper in first time pixel cell 200a and second of pixel cell 200b
Electrode 106 (that is, metal electrode) is also made up of continuous metal level, as shown in Fig. 6 and 7a.Consequently, it is possible to the first sub-pixel
Unit 200a and second of pixel cell 200b power line 110 also via constitute Top electrode 106 continuous metal level and that
This is electrically connected with.In other embodiments, first time pixel cell 200a and second of pixel cell 200b power line 110 is only
It is electrically connected to each other via the continuous conductive layer for constituting source doping region 115, and first time pixel cell 200a and second
The Top electrode 106 of storage capacitors 107 is then separated from each other in sub-pixel unit 200b, makes first time pixel cell 200a and second
Pixel cell 200b power line 110 is not electrically connected to each other via Top electrode 106.It is at least one of in embodiment
Continuous conductive layer and at least one of continuous metal level generally vertically first time pixel cell 200a and second of picture
The bearing of trend of plain unit 200b power line 110.
According to above-described embodiment, due to two in sub-pixel cell array or more than two same columns, with column or different lines and
The power line of the sub-pixel unit on different columns is electrically connected to each other, therefore can improve the source terminal electricity of each driving thin film transistor (TFT)
Press homogeneity.Furthermore, due to secondary to be electrically connected with using continuous metal level below power line and data wire and/or semiconductor layer
The power line of pixel cell, therefore can simplify the complexity of circuit layout and technique, while without limitation on Pixel Dimensions, and can
Lift the resolution of pixel in display.
Fig. 8 is according to another embodiment of the present invention with image display system block schematic diagram to show, and it can be implemented
(FPD) device 300 or electronic installation 500, such as notebook computer, mobile phone, digital camera, personal digital assistant are shown in plane
(personal digital assistant, PDA), desktop computer, television set, vehicle display or portable DVD are played
Device.The self-emission display apparatus 200 of the foregoing description is incorporated with flat display apparatus 300, and flat display apparatus 300 can be
OLED display.As shown in figure 8, flat display apparatus 300 includes self-emission display apparatus, self-luminous of such as Fig. 2 into Fig. 7 shows
Shown in showing device 200.In other embodiments, self-emission display apparatus 200 is incorporated with electronic installation 500.As shown in figure 8,
Electronic installation 500 includes：Flat display apparatus 300 and input block 400.Furthermore, input block 400 is coupled to flat-panel screens
Device 300, to provide input signal (for example, signal of video signal) to flat display apparatus 300 to produce image.
Although the present invention is disclosed as above with preferred embodiment, so it is not limited to the present invention, any affiliated technology
Those of ordinary skill in field, without departing from the spirit and scope of the present invention, when can change and retouch, therefore the present invention
Protection domain, which works as to define depending on appended claim, to be defined.
Claims (15)
1. a kind of image display system, including：
Self-emission display apparatus, including：
Substrate；
First time pixel cell, is arranged on the substrate, including：
First light-emitting component；
First power line, is electrically connected to first light-emitting component；
First Top electrode, between the substrate and first power line, and is electrically connected to first power line；And
First bottom electrode, between the substrate and first Top electrode；
Second of pixel cell, is arranged on the substrate and adjacent to the first time pixel cell, including：
Second light-emitting component；
Second source line, is electrically connected to second light-emitting component；
Second Top electrode, between the substrate and the second source line, and is electrically connected to the second source line；And
Second bottom electrode, between the substrate and second Top electrode；And
Dielectric layer, between first Top electrode and first bottom electrode, and positioned at second Top electrode and this second time electricity
Between pole；
Wherein first Top electrode is made up of with second Top electrode the first continuous conductive layer, makes first power line in this
The first continuous conductive layer is directly connected in first time pixel cell, and the second source line is in second of pixel cell
The first continuous conductive layer is directly connected to, and wherein first bottom electrode and second bottom electrode is by semi-conducting material institute structure
Into, and the first power supply line overlap first Top electrode and first bottom electrode, and the second source line overlap electricity on second
Pole and second bottom electrode.
2. image display system as claimed in claim 1, the wherein self-emission display apparatus also include：
Third time pixel cell, is arranged on the substrate and adjacent to second of pixel cell, including：
3rd light-emitting component；
3rd power line, is electrically connected to the 3rd light-emitting component；And
3rd electrode, between the substrate and the 3rd power line, and is electrically connected to the 3rd power line；
Wherein the 3rd electrode is made up of the first continuous conductive layer, is made first power line, the second source line and is somebody's turn to do
3rd power line is electrically connected to each other via the first continuous conductive layer.
3. image display system as claimed in claim 1, wherein the first continuous conductive layer is by metal or semi-conducting material
Constituted.
4. image display system as claimed in claim 1, first continuous conductive layer of a wherein at least part substantially hangs down
The bearing of trend of straight first power line and the second source line.
5. image display system as claimed in claim 1, the wherein self-emission display apparatus also include：
Third time pixel cell, is arranged on the substrate, including：
3rd light-emitting component；
3rd power line, is electrically connected to the 3rd light-emitting component；And
3rd electrode, between the substrate and the 3rd power line, and is electrically connected to the 3rd power line；And
4th sub-pixel unit, is arranged on the substrate and adjacent to the third time pixel cell, including：
4th light-emitting component；
4th power line, is electrically connected to the 4th light-emitting component；And
4th electrode, between the substrate and the 4th power line, and is electrically connected to the 4th power line；
Wherein the 3rd electrode is made up of with the 4th electrode the second continuous conductive layer, make the 3rd power line via this
Two continuous conductive layers and be electrically connected to the 4th power line, and wherein the first continuous conductive layer is second continuous with this
Conductive layer has different materials.
6. image display system as claimed in claim 1, in addition to：
Flat display apparatus, including the self-emission display apparatus；And
Input block, is coupled to the flat display apparatus, to provide input into the flat display apparatus, makes plane display dress
Put display image.
Filled 7. image display system as claimed in claim 6, the wherein system include the electronics with the flat display apparatus
Put.
8. image display system as claimed in claim 7, the wherein electronic installation include notebook computer, mobile phone, numerical digit phase
Machine, personal digital assistant, desktop computer, television set, vehicle display or portable DVD player.
9. a kind of image display system, including：
Self-emission display apparatus, including：
Substrate；
First time pixel cell, is arranged on the substrate, including：
First light-emitting component；
First power line, is electrically connected to first light-emitting component；And
First driving transistor, is electrically connected to first power line to drive the first luminous member with the first source doping region
Part；And
Second of pixel cell, is arranged on the substrate and adjacent to the first time pixel cell, including：
Second light-emitting component；
Second source line, is electrically connected to second light-emitting component；And
Second driving transistor, the second source line is electrically connected to the second source doping region, with drive this second light
Element；
Wherein first source doping region is made up of with second source doping region continuous conductive layer, makes first power line
The second source line is electrically connected to via the continuous conductive layer.
10. image display system as claimed in claim 9, the wherein continuous conductive layer include the polysilicon of doping.
11. image display system as claimed in claim 9, continuous conductive layer of a wherein at least part generally vertically should
The bearing of trend of first power line and the second source line.
12. image display system as claimed in claim 9, in addition to continuous metal level, make first power line via this
Continuous metal level and be electrically connected to the second source line.
13. image display system as claimed in claim 9, in addition to：
Flat display apparatus, including the self-emission display apparatus；And
Input block, is coupled to the flat display apparatus, to provide input into the flat display apparatus, makes plane display dress
Put display image.
14. image display system as claimed in claim 13, the wherein system include the electronics with the flat display apparatus
Device.
15. image display system as claimed in claim 14, the wherein electronic installation include notebook computer, mobile phone, numerical digit
Camera, personal digital assistant, desktop computer, television set, vehicle display or portable DVD player.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410171591.9A CN103943664B (en) | 2009-05-13 | 2009-05-13 | Image display system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910136730.3A CN101887906B (en) | 2009-05-13 | 2009-05-13 | Image display system |
| CN201410171591.9A CN103943664B (en) | 2009-05-13 | 2009-05-13 | Image display system |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910136730.3A Division CN101887906B (en) | 2009-05-13 | 2009-05-13 | Image display system |
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| CN103943664B true CN103943664B (en) | 2017-07-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1437177A (en) * | 2002-02-06 | 2003-08-20 | 株式会社日立制作所 | Organic Luminous display device |
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| JP4334045B2 (en) * | 1999-02-09 | 2009-09-16 | 三洋電機株式会社 | Electroluminescence display device |
| TW591584B (en) * | 1999-10-21 | 2004-06-11 | Semiconductor Energy Lab | Active matrix type display device |
| JP2004119304A (en) * | 2002-09-27 | 2004-04-15 | Sanyo Electric Co Ltd | Organic electroluminescence display device and method for manufacturing the same |
| KR100573132B1 (en) * | 2004-02-14 | 2006-04-24 | 삼성에스디아이 주식회사 | Organic electro-luminescent display device and Fabricating the same |
| KR101222539B1 (en) * | 2005-12-23 | 2013-01-16 | 엘지디스플레이 주식회사 | Light emitting diode and Capacitor the same. |
| US8199074B2 (en) * | 2006-08-11 | 2012-06-12 | Chimei Innolux Corporation | System and method for reducing mura defects |
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| CN1437177A (en) * | 2002-02-06 | 2003-08-20 | 株式会社日立制作所 | Organic Luminous display device |
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