CN103943664A - Image display system - Google Patents
Image display system Download PDFInfo
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- CN103943664A CN103943664A CN201410171591.9A CN201410171591A CN103943664A CN 103943664 A CN103943664 A CN 103943664A CN 201410171591 A CN201410171591 A CN 201410171591A CN 103943664 A CN103943664 A CN 103943664A
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- power line
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Abstract
The invention discloses an image display system. The image display system comprises a self-illumination display device. The self-illumination display device comprises a substrate, a first sub-pixel unit and a second sub-pixel unit, wherein the first sub-pixel unit and the second sub-pixel unit are arranged on the substrate. Each pixel unit comprises a light-emitting component, a power line and an electrode, wherein the power line is electrically connected to the light-emitting component, and the electrode is electrically connected to the power line. The second sub-pixel unit is adjacent to the first sub-pixel unit, and the electrodes in the first sub-pixel unit and the second sub-pixel unit are composed of continuous conducting layers so that the two power lines can be electrically connected with each other through the continuous conducting layers.
Description
Present specification is the divisional application that the denomination of invention submitted on May 13rd, 2009 is No. 200910136730.3 application for a patent for invention of " image display system ".
Technical field
The present invention relates to a kind of flat-panel screens technology, particularly relate to a kind of self-emitting display, wherein utilize the definition active layer of thin-film transistor or the material layer of gate electrode to be electrically connected the power line for light-emitting component.
Background technology
In recent years, the demand of flat display apparatus increases fast, for example self-emission display apparatus.Self-emission display apparatus utilizes Organic Light Emitting Diode (organic light-emitting diode conventionally, OLED) as the light-emitting component for image display in pixel region, for example active formula array Organic Light Emitting Diode (active matrix OLED, AMOLED) display.In the inferior pel array of self-emission display apparatus, each pixel (sub-pixel) unit generally includes: the inferior pixel unit circuit being formed by data wire DL, scan line SL, power line PL, switching thin-film transistor SW, driving thin-film transistor DR, storage capacitors C and light-emitting diode D, as shown in Figure 1.
In AMOLED product, in order to reduce the pressure drop producing when large electric current is flowed through power line, be all the width of widening as much as possible power line.Moreover; the source terminal voltage homogeneity (voltage uniformity) that drives thin-film transistor in order to improve each; conventionally power line can be made into network structure, the power line of the inferior pixel on different hurdles in each row of pel array can be electrically connected.
Because cancellated power line and data wire are made by same metal level, therefore the cancellated power line of part can be crossed over data wire.Therefore,, in circuit design, must additionally make bridge formation (at least containing two contact holes) at the intersection point of cancellated power line and data wire.Thus, can increase the complexity of circuit layout and technique.Moreover Pixel Dimensions can be limited in the required space of cancellated power line, the resolution (pixel per inch, ppi) of pixel in display cannot be promoted.
Therefore, be necessary to seek a kind of power line structure for OLED display, it can, in improving voltage homogeneity, promote resolution of display.
Summary of the invention
The embodiment of the present invention provides a kind of image display system.This system comprises self-emission display apparatus, and self-emission display apparatus comprises substrate and is arranged at first and second pixel cell on substrate.Pixel cell comprises for the first time: the first light-emitting component, the first power line and the first storage capacitors.The first power line is electrically connected to the first light-emitting component.The first storage capacitors has the first electrode and is electrically connected to the first power line.Pixel cell, adjacent to pixel cell for the first time, comprising: the second light-emitting component, second source line and the second storage capacitors for the second time.Second source line is electrically connected to the second light-emitting component.The second storage capacitors has the second electrode and is electrically connected to second source line, and wherein first and second electrode is made up of continuous conductive layer, makes the first power line be electrically connected to second source line via continuous conductive layer.
Another embodiment of the present invention provides a kind of image display system, and this system comprises self-emission display apparatus, and self-emission display apparatus comprises substrate and is arranged at first and second pixel cell on substrate.Pixel cell comprises for the first time: the first light-emitting component, the first power line, the first storage capacitors and the first driving transistors.The first power line is electrically connected to the first metal electrode of the first light-emitting component and the first storage capacitors.The first driving transistors has the first source doping region and is connected to the first power line, to drive the first light-emitting component.Pixel cell, adjacent to pixel cell for the first time, comprising: the second light-emitting component, second source line, the second storage capacitors and the second driving transistors for the second time.Second source line is electrically connected to the second metal electrode of the second light-emitting component and the second storage capacitors.The second driving transistors has the second source doping region and is electrically connected to second source line, to drive the second light-emitting component.Wherein, first and second source doping region is made up of continuous conductive layer, makes the first power line be electrically connected to second source line via continuous conductive layer.
Brief description of the drawings
Fig. 1 is the inferior pixel unit circuit schematic diagram that shows self-emission display apparatus;
Fig. 2 is the image display system floor map with self-emission display apparatus showing according to the embodiment of the present invention;
Fig. 3 is for to show along the generalized section of 3-3 ' line in Fig. 2;
Fig. 4 shows the image display system floor map according to another embodiment of the present invention with self-emission display apparatus;
Fig. 5 is for to show along the generalized section of 5-5 ' line in Fig. 4;
Fig. 6 shows the image display system floor map according to another embodiment of the present invention with self-emission display apparatus;
Fig. 7 a is for to show along the generalized section of 7a-7a ' line in Fig. 6;
Fig. 7 b is for to show along the generalized section of 7b-7b ' line in Fig. 6; And
Fig. 8 has image display system block schematic diagram according to another embodiment of the present invention for showing.
Description of reference numerals
Known
C～storage capacitors D～light-emitting diode
DR～driving thin-film transistor DL～data wire
PL～power line SL～scan line
SW～switching thin-film transistor
Embodiment
100～substrate, 102～bottom electrode
104～capacitance dielectric layer, 106～top electrode
107～storage capacitors, 108～insulating barrier
109～driving thin-film transistor, 110～power line
111～light-emitting component, 112～data wire
114～scan line, 115～source doping region
200～self-emission display apparatus 200a～pixel cell for the first time
200b～pixel cell 300～type flat panel display apparatus for the second time
400～input unit, 500～electronic installation
200c～pixel cell D～drain electrode for the third time
G～grid P1, P2, P3～conductive plunger S～source electrode
Embodiment
Making and the use of the embodiment of the present invention are below described.But, can understand easily embodiment provided by the present invention and only make and use the present invention for explanation with ad hoc approach, not in order to limit to scope of the present invention.
Image display system according to the embodiment of the present invention is below described.Please refer to Fig. 2 and Fig. 3, wherein Fig. 2 is the image display system floor map with self-emission display apparatus showing according to the embodiment of the present invention, and Fig. 3 is for to show along the generalized section of 3-3 ' line in Fig. 2.Self-emission display apparatus 200 comprises: substrate 100 and be arranged at the repeatedly pixel cell that is arranged in array on substrate 100.In order to simplify accompanying drawing, only show two adjacent and in order to show the 200a of pixel cell for the first time of different mass-tones and pixel cell 200b for the second time herein.Substrate 100 can be made up of glass, quartz or other transparent material.Moreover typical time pixel cell comprises: drive thin-film transistor (driving TFT) for driving light-emitting component, switching thin-film transistor (switching TFT) to see through and drive thin-film transistor that voltage is put on to light-emitting component for transmitting image data and power line for control switch thin-film transistor, data wire for storing image data, scan line for the state, storage capacitors that switch time pixel cell.
In the present embodiment, for the first time pixel cell 200a and for the second time pixel cell 200b comprise respectively: power line 110, data wire 112, scan line 114, storage capacitors 107, drive thin-film transistor 109, light-emitting component 111 and switching thin-film transistor (not indicating).
Light-emitting component 111, for example Organic Light Emitting Diode (OLED), be electrically connected to the drain D that drives thin-film transistor 109 by conductive plunger P2, then be electrically connected with power line 110 via being electrically connected to the conductive plunger P3 of the source S that drives thin-film transistor 109.
Storage capacitors 107 comprises: bottom electrode 102, top electrode 106 and the capacitance dielectric layer 104 between two electrodes 102 and 106.In the present embodiment, bottom electrode 102 can be made up of semi-conducting material, for example the polysilicon of doping.Top electrode 106 can be made up of metal, for example molybdenum (Mo) or molybdenum alloy.Capacitance dielectric layer 104 can be made up of silica, silicon nitride or its combination.Bottom electrode 102 is electrically connected to the drain electrode and the grid G that drives thin-film transistor 109 of switching thin-film transistor.Moreover top electrode 106 is electrically connected to power line 110 via the conductive plunger P1 in top insulating barrier 108, as shown in Figure 3.Insulating barrier 108 is as protective layer, flatness layer, intermediate layer or its combination, and can be made up of silica, silicon nitride or its combination institute.
In the present embodiment, specifically for the first time pixel cell 200a and for the second time in pixel cell 200b storage capacitors 107 top electrode 106 formed by continuous conductive layer, for example continuous metal level.Thus, for the first time pixel cell 200a and for the second time pixel cell 200b power line 110 can via form top electrode 106 continuous conductive layer and be electrically connected to each other.Therefore,, in inferior pixel unit array, the inferior pixel cell of same row, can see through continuous conductive layer and be electrically connected to few two above power lines.In other embodiments, the inferior pixel cell of same row, can form the power lines that many groups are electrically connected through two above continuous conductive layers.In an embodiment, the continuous vertical pixel cell 200a for the first time of conductive layer cardinal principle of at least a portion and for the second time bearing of trend of the power line 110 of pixel cell 200b.
The data wire 112 that is positioned at insulating barrier 108 tops can be formed by the same conductive layer of patterning with power line 110, and its material comprises: aluminium (Al), molybdenum (Mo), titanium (Ti) or its combination.
Please refer to Fig. 4 and Fig. 5, wherein Fig. 4 shows the image display system floor map according to another embodiment of the present invention with self-emission display apparatus, and Fig. 5 is for to show along the generalized section of 5-5 ' line in Fig. 4, be wherein same as that parts that Fig. 2 and Fig. 3 are identical use identical label and the description thereof will be omitted.In the present embodiment, pixel cell 200c, with pixel cell 200a is adjacent for the first time, and is same as the shown mass-tone of pixel cell 200a for the first time for showing for the third time.Moreover top electrode 106 is electrically connected to the drain electrode and the grid G that drives thin-film transistor 109 of switching thin-film transistor, and bottom electrode 102 is electrically connected to power line 110 via the conductive plunger P3 in top insulating barrier 108, as shown in Figure 5.Specifically for the first time pixel cell 200a and for the second time in pixel cell 200b the bottom electrode 102 of storage capacitors 107 formed by continuous conductive layer.In the present embodiment, the bottom electrode 102 of storage capacitors 107 also can be made up of this continuous conductive layer in pixel cell 200c for the third time.Continuous conductive layer comprises semi-conducting material, for example the polysilicon of doping.Similarly, for the first time pixel cell 200a, for the second time pixel cell 200b and for the third time pixel cell 200c power line 110 can via form bottom electrode 102 continuous conductive layer and be electrically connected to each other.
In inferior pixel unit array, the inferior pixel cell on same row and/or same hurdle, can see through continuous conductive layer and be electrically connected corresponding power line.In other embodiments, the inferior pixel cell on same row and/or same hurdle, can form the many groups of inferior pixel cells with the power line of electric connection through two above continuous conductive layers.In an embodiment, the continuous conductive layer of at least a portion vertical pixel cell 200a for the first time, for the second time pixel cell 200b and the bearing of trend of the power line 110 of pixel cell 200c for the third time substantially.
In other embodiments, in inferior pixel unit array, some power line 110 can be electrically connected to each other (as shown in Figures 2 and 3) by forming the continuous conductive layer of top electrode 106, and some power line 110 can be by forming the continuous conductive layer of bottom electrode 102 be electrically connected to each other (as shown in Figures 4 and 5).
Please refer to Fig. 6,7a and Fig. 7 b, wherein Fig. 6 shows the image display system floor map according to another embodiment of the present invention with self-emission display apparatus, and Fig. 7 a is for showing along the generalized section of 7a-7a ' line in Fig. 6 and Fig. 7 b as to show along the generalized section of 7b-7b ' line in Fig. 6, is wherein same as parts that Fig. 2 and Fig. 3 are identical and uses identical label also the description thereof will be omitted.In the present embodiment, the bottom electrode 102 of storage capacitors 107 is made up of semi-conducting material, for example polysilicon of doping, and top electrode 106 is made up of metal, for example molybdenum (Mo) or molybdenum alloy.Top electrode 106 is electrically connected to power line 110 via the conductive plunger P1 in top insulating barrier 108.Moreover, drive thin-film transistor 109 to there is source doping region 115, it is electrically connected to power line 110 via the conductive plunger P3 in top insulating barrier 108.
Specifically, pixel cell 200a and the polysilicon that drives the source doping region 115 of thin-film transistor 109 for example to be adulterated by continuous conductive layer in pixel cell 200b for the second time form for the first time.So, for the first time pixel cell 200a and for the second time pixel cell 200b power line 110 can via form source doping region 115 continuous conductive layer and be electrically connected to each other, as shown in Fig. 6 and 7b.Moreover, for the first time pixel cell 200a and for the second time in pixel cell 200b the top electrode 106 (, metal electrode) of storage capacitors 107 also formed by continuous metal level, as shown in Fig. 6 and 7a.Thus, for the first time pixel cell 200a and for the second time pixel cell 200b power line 110 also via form top electrode 106 continuous metal level and be electrically connected to each other.In other embodiments, for the first time pixel cell 200a and for the second time pixel cell 200b power line 110 only via form source doping region 115 continuous conductive layer and be electrically connected to each other, for the first time pixel cell 200a and for the second time in pixel cell 200b the top electrode 106 of storage capacitors 107 be separated from each other, make for the first time pixel cell 200a and for the second time the power line 110 of pixel cell 200b be not electrically connected to each other via top electrode 106.In an embodiment, the continuous vertical pixel cell 200a for the first time of metal level cardinal principle of the continuous conductive layer of at least a portion and at least a portion and for the second time bearing of trend of the power line 110 of pixel cell 200b.
According to above-described embodiment, due to more than two or two same column in inferior pixel unit array, be electrically connected to each other with the power line of the inferior pixel cell on hurdle or different lines and different hurdles, therefore can improve each and drive the source terminal voltage homogeneity of thin-film transistor.Moreover, owing to adopting the continuous metal level in power line and data wire below and/or semiconductor layer to be electrically connected the power line of time pixel cell, therefore can simplify the complexity of circuit layout and technique, can not limit Pixel Dimensions, and can promote the resolution of pixel in display simultaneously.
Fig. 8 has image display system block schematic diagram according to another embodiment of the present invention for showing, it may be implemented in plane and shows (FPD) device 300 or electronic installation 500, for example notebook computer, mobile phone, digital camera, personal digital assistant (personal digital assistant, PDA), desktop computer, television set, vehicle display or portable DVD player.Described self-emission display apparatus 200 can be incorporated into flat display apparatus 300 before, and flat display apparatus 300 can be OLED display.As shown in Figure 8, flat display apparatus 300 comprises self-emission display apparatus, as shown in the self-emission display apparatus 200 in Fig. 2 to Fig. 7.In other embodiments, self-emission display apparatus 200 can be incorporated into electronic installation 500.As shown in Figure 8, electronic installation 500 comprises: flat display apparatus 300 and input unit 400.Moreover input unit 400 is coupled to type flat panel display apparatus 300, in order to provide input signal (for example, signal of video signal) to flat display apparatus 300 with produce image.
Although the present invention discloses as above with preferred embodiment; so it is not in order to limit the present invention; those of ordinary skill in technical field under any; without departing from the spirit and scope of the present invention; when doing to change and retouching, therefore protection scope of the present invention is when defining and be as the criterion depending on appended claim.
Claims (12)
1. an image display system, comprising:
Self-emission display apparatus, comprising:
Substrate;
Pixel cell for the first time, is arranged on this substrate, comprising:
The first light-emitting component;
The first power line, is electrically connected to this first light-emitting component; And
The first electrode, between this substrate and this first power line, and is electrically connected to this first power line; And
Pixel cell for the second time, is arranged on this substrate and adjacent to this pixel cell for the first time, comprises:
The second light-emitting component;
Second source line, is electrically connected to this second light-emitting component; And
The second electrode, between this substrate and this second source line, and is electrically connected to this second source line;
Wherein this first electrode and this second electrode are made up of the first continuous conductive layer, make this first power line and this second source line directly be connected this first continuous conductive layer.
2. image display system as claimed in claim 1, wherein this self-emission display apparatus also comprises:
Pixel cell for the third time, is arranged on this substrate and adjacent to this pixel cell for the second time, comprises:
The 3rd light-emitting component;
The 3rd power line, is electrically connected to the 3rd light-emitting component; And
Third electrode, between this substrate and the 3rd power line, and is electrically connected to the 3rd power line;
Wherein this third electrode is made up of this first continuous conductive layer, and this first power line, this second source line and the 3rd power line are electrically connected to each other via this first continuous conductive layer.
3. image display system as claimed in claim 1, wherein this first continuous conductive layer is made up of metal or semi-conducting material.
4. image display system as claimed in claim 1, wherein substantially vertical this first power line of this first continuous conductive layer of at least a portion and the bearing of trend of this second source line.
5. image display system as claimed in claim 1, wherein this self-emission display apparatus also comprises:
Pixel cell for the third time, is arranged on this substrate, comprising:
The 3rd light-emitting component;
The 3rd power line, is electrically connected to the 3rd light-emitting component; And
Third electrode, between this substrate and the 3rd power line, and is electrically connected to the 3rd power line; And
The 4th pixel cell, is arranged on this substrate and adjacent to this pixel cell for the third time, comprises:
The 4th light-emitting component;
The 4th power line, is electrically connected to the 4th light-emitting component; And
The 4th electrode, between this substrate and the 4th power line, and is electrically connected to the 4th power line;
Wherein this third electrode and the 4th electrode are made up of the second continuous conductive layer, make the 3rd power line be electrically connected to the 4th power line via this second continuous conductive layer, and wherein this first continuous conductive layer have different materials from this second continuous conductive layer.
6. an image display system, comprising:
Self-emission display apparatus, comprising:
Substrate;
Pixel cell for the first time, is arranged on this substrate, comprising:
The first light-emitting component;
The first power line, is electrically connected to this first light-emitting component; And
The first driving transistors, has the first source doping region and is electrically connected to this first power line to drive this first light-emitting component; And
Pixel cell for the second time, is arranged on this substrate and adjacent to this pixel cell for the first time, comprises:
The second light-emitting component;
Second source line, is electrically connected to this second light-emitting component; And
The second driving transistors, has the second source doping region and is electrically connected to this second source line, to drive this second light-emitting component;
Wherein this first source doping region and this second source doping region are made up of continuous conductive layer, make this first power line be electrically connected to this second source line via this continuous conductive layer.
7. image display system as claimed in claim 6, wherein this continuous conductive layer comprises the polysilicon of doping.
8. image display system as claimed in claim 6, wherein substantially vertical this first power line of this continuous conductive layer of at least a portion and the bearing of trend of this second source line.
9. image display system as claimed in claim 6, also comprises continuous metal level, makes this first power line be electrically connected to this second source line via this continuous metal level.
10. the image display system as described in claim 1 or 6, also comprises:
Flat display apparatus, comprises this self-emission display apparatus; And
Input unit, is coupled to this flat display apparatus, inputs to this flat display apparatus in order to provide, and makes this flat display apparatus show image.
11. image display systems as claimed in claim 10, wherein this system comprises the electronic installation with this flat display apparatus.
12. image display systems as claimed in claim 11, wherein this electronic installation comprises notebook computer, mobile phone, digital still camera, personal digital assistant, desktop computer, television set, vehicle display or portable DVD player.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410171591.9A CN103943664B (en) | 2009-05-13 | 2009-05-13 | Image display system |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910136730.3A CN101887906B (en) | 2009-05-13 | 2009-05-13 | Image display system |
| CN201410171591.9A CN103943664B (en) | 2009-05-13 | 2009-05-13 | Image display system |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910136730.3A Division CN101887906B (en) | 2009-05-13 | 2009-05-13 | Image display system |
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| CN103943664A true CN103943664A (en) | 2014-07-23 |
| CN103943664B CN103943664B (en) | 2017-07-28 |
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