CN103943565B - A kind of manufacture method of naked eye 3 D function panel - Google Patents
A kind of manufacture method of naked eye 3 D function panel Download PDFInfo
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- CN103943565B CN103943565B CN201410126416.8A CN201410126416A CN103943565B CN 103943565 B CN103943565 B CN 103943565B CN 201410126416 A CN201410126416 A CN 201410126416A CN 103943565 B CN103943565 B CN 103943565B
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- photoresist
- passivation layer
- holding wire
- transparency electrode
- via hole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
Abstract
The embodiment of the present invention provides the manufacture method of a kind of naked eye 3 D function panel, the number of times of patterning processes can be reduced, promote the production capacity of volume production product, reduce cost, the manufacture method of described naked eye 3 D function panel includes: by a patterning processes, forms the first holding wire and secondary signal line on the substrate being formed with holding wire metal level；By a patterning processes, on the substrate being formed with the first holding wire and secondary signal line formed passivation layer, the first passivation layer via hole and with the second passivation layer via hole；The substrate be formed with passivation layer is formed the first transparency electrode and the second transparency electrode, first transparency electrode and the second transparency electrode interval are arranged, first transparency electrode is connected with the first holding wire by the first passivation layer via hole, and the second transparency electrode is connected with secondary signal line by the second passivation layer via hole.The embodiment of the present invention provides the manufacture method of a kind of naked eye 3 D function panel, for the manufacture of naked eye 3 D function panel.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to the manufacture method of a kind of naked eye 3 D function panel.
Background technology
Rise along with 3D, bore hole 3D also receives much attention therewith, at present, bore hole 3D technology mainly has four kinds: electronics visually impaired raster pattern technology, lens pillar technology, shutter interferes backlight type technology and double-layer showing formula technology, wherein more often use electronics visually impaired raster pattern, described electronics visually impaired raster pattern technology is also referred to as parallax barrier or parallax barrier technology, before display floater, usually add naked eye 3 D function panel (3Dbarriersignalglass), grating is formed by tactic many strip electrodes on described 3Dbarriersignalglass, realize the effect of bore hole 3D.
In prior art, 3Dbarriersignalglass includes holding wire metal level, passivation layer and transparent conductive layer three-decker, need metal mask layer, passivation layer mask, three patterning processes of transparency conducting layer mask just can complete, and each time patterning processes includes again the techniques such as film forming, exposure, development, etching, stripping respectively.The number of times of patterning processes too much will result directly in the reduction of the increase of technological difficulty, the rising of product cost and product production capacity.
Summary of the invention
Embodiments of the invention provide the manufacture method of a kind of naked eye 3 D function panel, it is possible to reduce the number of times of patterning processes, promote the production capacity of volume production product, reduce cost.
For reaching above-mentioned purpose, embodiments of the invention adopt the following technical scheme that
On the one hand, it is provided that the manufacture method of a kind of naked eye 3 D function panel, described manufacture method includes:
By a patterning processes, the substrate being formed with holding wire metal level forms the first holding wire and secondary signal line；
By a patterning processes, the substrate being formed with described first holding wire and described secondary signal line forms passivation layer, first passivation layer via hole corresponding with described first holding wire and second passivation layer via hole corresponding with described secondary signal line；
The substrate being formed with described passivation layer is formed the first transparency electrode and the second transparency electrode, described first transparency electrode and described second transparency electrode interval are arranged, described first transparency electrode is connected with described first holding wire by described first passivation layer via hole, and described second transparency electrode is connected with described secondary signal line by described second passivation layer via hole.
Optionally, described by a patterning processes, forming passivation layer on the substrate being formed with described first holding wire and described secondary signal line, first passivation layer via hole corresponding with described first holding wire and second passivation layer via hole corresponding with described secondary signal line include:
The substrate being formed with described first holding wire and described secondary signal line deposits described passivation layer；
Described passivation layer deposits photoresist；
By the first mask plate, described photoresist is exposed, after development, form photoresist half member-retaining portion, photoresist is fully retained part and photoresist removal part completely, it is corresponding with described first passivation layer via hole and described second passivation layer via hole that part removed completely by described photoresist, described photoresist half member-retaining portion covers the position needing to form described first transparency electrode and described second transparency electrode, photoresist is fully retained part and covers other regions removed outside photoresist removal part completely and photoresist half member-retaining portion, the thickness of described photoresist half member-retaining portion is fully retained the thickness of part less than described photoresist；
Etch described photoresist and remove the passivation layer that part is corresponding completely, form described first passivation layer via hole and the second passivation layer via hole.
Optionally, the passivation layer that the described photoresist of described etching removes part corresponding completely includes:
By dry carving technology, etch described photoresist and remove the passivation layer that part is corresponding completely.
Optionally, the thickness of described photoresist half member-retaining portion is 0.6 μm～1.2 μm, and it is 2 μm～3 μm that described photoresist is fully retained the thickness of part.
Optionally, described on the substrate being formed with described passivation layer, the first transparency electrode is formed and the second transparency electrode includes:
Remove the photoresist of described photoresist half member-retaining portion；
Deposition transparent conductive film on the substrate removing after the photoresist of described photoresist half member-retaining portion；
Remove described photoresist by stripping technology and the photoresist of part is fully retained, make described photoresist that partly photoresist is fully retained and described photoresist is fully retained the upper transparent conductive film covered of part and is stripped simultaneously, form the first transparency electrode and described second transparency electrode, described first transparency electrode is connected by described first passivation layer via hole with described first holding wire, and described second transparency electrode is connected by described second passivation layer via hole with described secondary signal line.
Optionally, the photoresist of described removal described photoresist half member-retaining portion includes:
By cineration technics, remove the photoresist of described photoresist half member-retaining portion.
Optionally, on described substrate after removing the photoresist of described photoresist half member-retaining portion, deposition transparent conductive film includes:
By the technology of low temperature depositing, the substrate after removing the photoresist of described photoresist half member-retaining portion deposits described transparent conductive film.
Optionally, described pass through a patterning processes, the substrate being formed with holding wire metal level formed the first holding wire and secondary signal line includes:
Described holding wire metal level deposits photoresist；
After by the second mask plate described photoresist being exposed, developed, forming the first photoresist layer, the figure of described first photoresist layer is the figure needed for described first holding wire and described secondary signal line；
The described holding wire metal level that etching is not covered by described first photoresist layer；
Remove described first photoresist layer, form described first holding wire and described secondary signal line.
The manufacture method of the naked eye 3 D function panel that the embodiment of the present invention provides, when manufacturing described naked eye 3 D function panel, first pass through a patterning processes, the substrate being formed with holding wire metal level is formed holding wire, then pass through a patterning processes, half-exposure technology is adopted to form passivation layer and passivation layer via hole on the substrate being formed with described holding wire, and photoresist half member-retaining portion and the photoresist on passivation layer is fully retained part, then on the substrate being formed with described passivation layer, form transparency electrode, compared to prior art, decrease the number of times of patterning processes, improve the production capacity of volume production product, reduce cost.
Accompanying drawing explanation
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, the accompanying drawing used required in embodiment or description of the prior art will be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the premise not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
The flow chart of the manufacture method of a kind of naked eye 3 D function panel that Fig. 1 provides for the embodiment of the present invention；
The structural representation of a kind of naked eye 3 D function panel that Fig. 2 provides for the embodiment of the present invention；
The flow chart of the manufacture method of the another kind of naked eye 3 D function panel that Fig. 3 provides for the embodiment of the present invention；
The generalized section depositing photoresist on holding wire metal level that Fig. 4 provides for the embodiment of the present invention；
The generalized section forming the first photoresist layer that Fig. 5 (a) provides for the embodiment of the present invention；
The structural representation forming the first photoresist layer that Fig. 5 (b) provides for the embodiment of the present invention；
The generalized section of the holding wire metal level that the etching that Fig. 6 (a) provides for the embodiment of the present invention is not covered by the first photoresist layer；
The structural representation of the holding wire metal level that the etching that Fig. 6 (b) provides for the embodiment of the present invention is not covered by the first photoresist layer；
The generalized section forming the first holding wire and secondary signal line that Fig. 7 (a) provides for the embodiment of the present invention；
The structural representation forming the first holding wire and secondary signal line that Fig. 7 (b) provides for the embodiment of the present invention；
The generalized section of the deposit passivation layer that Fig. 8 provides for the embodiment of the present invention；
The generalized section depositing photoresist over the passivation layer that Fig. 9 provides for the embodiment of the present invention；
Figure 10 (a) removes part completely for the formation photoresist that the embodiment of the present invention provides, and photoresist half member-retaining portion and photoresist are fully retained the generalized section one of part；
Figure 10 (b) removes part completely for the formation photoresist that the embodiment of the present invention provides, and photoresist half member-retaining portion and photoresist are fully retained the generalized section two of part；
Figure 10 (c) removes part completely for the formation photoresist that the embodiment of the present invention provides, and photoresist half member-retaining portion and photoresist are fully retained the structural representation of part；
The generalized section one forming the first passivation layer via hole and the second passivation layer via hole that Figure 11 (a) provides for the embodiment of the present invention；
The generalized section two forming the first passivation layer via hole and the second passivation layer via hole that Figure 11 (b) provides for the embodiment of the present invention；
The structural representation forming the first passivation layer via hole and the second passivation layer via hole that Figure 11 (c) provides for the embodiment of the present invention；
The generalized section one removing photoresist half member-retaining portion that Figure 12 (a) provides for the embodiment of the present invention；
The generalized section one removing photoresist half member-retaining portion that Figure 12 (b) provides for the embodiment of the present invention；
The structural representation removing photoresist half member-retaining portion that Figure 12 (c) provides for the embodiment of the present invention；
The generalized section one of the deposition transparent conductive film that Figure 13 (a) provides for the embodiment of the present invention；
The generalized section two of the deposition transparent conductive film that Figure 13 (b) provides for the embodiment of the present invention；
The structural representation of the deposition transparent conductive film that Figure 13 (c) provides for the embodiment of the present invention；
The generalized section one forming the first transparency electrode and the second transparency electrode that Figure 14 (a) provides for the embodiment of the present invention；
The generalized section two forming the first transparency electrode and the second transparency electrode that Figure 14 (b) provides for the embodiment of the present invention；
The structural representation forming the first transparency electrode and the second transparency electrode that Figure 14 (c) provides for the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
The embodiment of the present invention provides the manufacture method of a kind of naked eye 3 D function panel 10, as it is shown in figure 1, include:
Step 101, by a patterning processes, the substrate being formed with holding wire metal level 101 is formed the first holding wire 1011 and secondary signal line 1012.
Concrete, first deposition holding wire metal level 101 over the glass substrate 100, the grid line metal that metal used by described holding wire metal level 101 is conventional in can manufacturing with array base palte is identical, wherein, with described secondary signal 1012 line ringwise, described first holding wire 1011 is positioned at outside described secondary signal line 1012 to described first holding wire 1011.
Needing explanation, described patterning processes can include making the partly or entirely making step such as the required mask of figure, exposure, development, photoetching, etching, and can include the making step such as ashing and annealing.
For example, on substrate, grid is formed by patterning processes, particularly as follows: first deposition of gate metal level on substrate, then in described gate metal layer, deposit photoresist, utilize mask plate that photoresist is exposed and development treatment is to form photoetching agent pattern, described photoetching agent pattern is described grid desirable pattern, followed by this photoetching agent pattern as etching mask, the gate metal layer not covered by described photoetching agent pattern is removed by techniques such as etchings, then remove described photoetching agent pattern, on substrate, finally form grid.
Step 102, by a patterning processes, the substrate being formed with described first holding wire 1011 and described secondary signal line 1012 is formed passivation layer 102, first passivation layer via hole 1021 corresponding with described first holding wire 1011 and second passivation layer via hole 1022 corresponding with described secondary signal line 1012.
Wherein, described passivation layer 102 is positioned at the upper strata of the first holding wire 1011 and secondary signal line 1012, and described first passivation layer via hole 1021 exposing described first holding wire 1011 it is formed at the first holding wire 1011, described second passivation layer via hole 1022 exposing described secondary signal line 1012 it is formed at secondary signal line 1012.
Step 103, on the substrate being formed with described passivation layer 102, form the first transparency electrode 1031 and the second transparency electrode 1032, described first transparency electrode 1031 and described second transparency electrode 1032 interval are arranged, described first transparency electrode 1031 is connected with described first holding wire 1011 by described first passivation layer via hole 1021, and described second transparency electrode 1032 is connected with described secondary signal line 1012 by described second passivation layer via hole 1022.
Wherein, described first transparency electrode 1031 and described second transparency electrode 1032 are positioned at described passivation layer 102 upper strata, described first transparency electrode 1031 is connected by described first passivation layer via hole 1021 with described first holding wire 1011, described second transparency electrode 1032 is connected by described second passivation layer via hole 1022 with described secondary signal line 1012, first transparency electrode 1031 is parallel with the second transparency electrode 1032, and with the longer of the first holding wire 1011 or secondary signal line 1012 while becoming the angle of 70 °～85 °, described first holding wire 1011 is for providing voltage signal for the first transparency electrode 1031, described secondary signal line 1012 is for providing voltage signal for the second transparency electrode 1032.
So, when carrying out the manufacture of naked eye 3 D function panel, first pass through a patterning processes, the substrate being formed with holding wire metal level is formed holding wire, then passes through a patterning processes, the substrate being formed with described holding wire is formed passivation layer and passivation layer via hole, the substrate being formed with described passivation layer is formed transparency electrode, compared to prior art, decreases the number of times of patterning processes, improve the production capacity of volume production product, reduce cost.
Concrete, described pass through a patterning processes, the substrate being formed with holding wire metal level 101 is formed the first holding wire 1011 and secondary signal line 1012 includes: on described holding wire metal level 101, deposit photoresist 104；After by the second mask plate described photoresist 104 being exposed, developed, forming the first photoresist layer 1044, the figure of described first photoresist layer 1044 is the figure needed for described first holding wire 1011 and described secondary signal line 1012；The described holding wire metal level that etching is not covered by described first photoresist layer 1044；Remove described first photoresist layer 1044, form described first holding wire 1011 and described secondary signal line 1012.It should be noted that the first mask plate is common mask plate, the light tight region of corresponding described first mask plate of described first photoresist layer 1044.
Concrete, described by a patterning processes, forming passivation layer 102 on the substrate being formed with described first holding wire 1011 and described secondary signal line 1012, first passivation layer via hole 1021 corresponding with described first holding wire 1011 and second passivation layer via hole 1022 corresponding with described secondary signal line 1012 include: deposit described passivation layer 102 on the substrate being formed with described first holding wire 1011 and described secondary signal line 1012；Described passivation layer 102 deposits photoresist 104；By the first mask plate, described photoresist is exposed, after development, form photoresist half member-retaining portion 1041, photoresist is fully retained part 1042 and part 1043 removed completely by photoresist, it is corresponding with described first passivation layer via hole 1021 and described second passivation layer via hole 1022 that part 1043 removed completely by described photoresist, described photoresist half member-retaining portion 1041 covers the position needing to form described first transparency electrode 1031 and described second transparency electrode 1032, photoresist be fully retained part 1042 cover remove photoresist remove part 1043 and photoresist half member-retaining portion 1041 completely outside other regions, the thickness of described photoresist half member-retaining portion 1041 is fully retained the thickness of part 1042 less than described photoresist；Etch described photoresist and remove the passivation layer 102 of part 1043 correspondence completely, form described first passivation layer via hole 1021 and the second passivation layer via hole 1022.Needing explanation, described first mask plate is gray tone mask plate or intermediate tone mask plate.
Optionally, it is possible to by dry carving technology, etch described photoresist and remove the passivation layer 102 of part 1043 correspondence completely.
Described dry carving technology, for utilizing glow discharge (glowdischarge) mode, produces comprise the charged particle such as ion, electronics and have the plasma-based of the neutral atom of elevated chemical activity, molecule and free radical, the technology performed etching.
Example, the thickness of described photoresist half member-retaining portion 1041 can be 0.6 μm～1.2 μm, and it can be 2 μm～3 μm that described photoresist is fully retained the thickness of part 1042.
Concrete, described on the substrate being formed with described passivation layer 102, form the first transparency electrode 1031 and the second transparency electrode 1032 includes: remove the photoresist of described photoresist half member-retaining portion 1041；Deposition transparent conductive film 103 on the substrate removing after the photoresist of described photoresist half member-retaining portion 1041；Remove described photoresist by stripping technology and the photoresist 104 of part 1042 is fully retained, make described photoresist that the photoresist 104 of part 1042 be fully retained and transparent conductive film 103 that described photoresist is fully retained in part 1042 to cover is stripped simultaneously, form the first transparency electrode 1031 and described second transparency electrode 1032, described first transparency electrode 1031 is connected by described first passivation layer via hole 1021 with described first holding wire 1011, and described second transparency electrode 1032 is connected by described second passivation layer via hole 1022 with described secondary signal line 1012.
Optionally, it is possible to by cineration technics, remove the photoresist 104 of described photoresist half member-retaining portion 1041.
Example, generally when deposition transparent conductive film 103 on the substrate removing after the photoresist 104 of described photoresist half member-retaining portion 1041, select the technology by low temperature depositing, substrate after removing the photoresist 104 of described photoresist half member-retaining portion 1041 deposits described transparent conductive film 103, so can ensure that the character not changing described photoresist 104 when depositing described transparent conductive film 103, in order to the follow-up photoresist 104 that can easier peel off described photoresist half member-retaining portion 1041.
Described naked eye 3 D function panel and structure are as shown in Figure 2, in Fig. 2, region 201 illustrates, first holding wire 1011 is connected by the first passivation layer via hole 1021 with the first transparency electrode 1031, and provide voltage signal for the first transparency electrode 1031, secondary signal line 1012 is connected by the second passivation layer via hole 1022 with the second transparency electrode 1032, and provide voltage signal for the second transparency electrode 1012, first transparency electrode 1031 is parallel with the second transparency electrode 1032, and with the longer of the first holding wire 1011 or secondary signal line 1012 while becoming the angle of 70 °～85 °, when the voltage of the first transparency electrode 1031 and the second transparency electrode 1032 differs, the described first transparency electrode 1031 liquid crystal molecule deflection angle corresponding from the second transparency electrode 1032 is different, the first transparency electrode 1031 and the second transparency electrode 1032 is made to form the striped that light and shade is separated by, the 2D image that display floater can be shown by this light and shade striped carries out partial occlusion, such that it is able to realize bore hole 3D effect according to the display image that light and shade striped does not block in the same time.
The manufacture method of the naked eye 3 D function panel that the embodiment of the present invention provides, when manufacturing described naked eye 3 D function panel, first pass through a patterning processes, the substrate being formed with holding wire metal level is formed holding wire, then pass through a patterning processes, half-exposure technology is adopted to form passivation layer and passivation layer via hole on the substrate being formed with described holding wire, and photoresist half member-retaining portion and the photoresist on passivation layer is fully retained part, then on the substrate being formed with described passivation layer, form transparency electrode, compared to prior art, decrease the number of times of patterning processes, improve the production capacity of volume production product, reduce cost.
The embodiment of the present invention provides the manufacture method of a kind of naked eye 3 D function panel 10, as shown in Figure 3, for apparent explanation, figure in the present embodiment is in each step the partial enlarged drawing in region 201 in Fig. 2, the manufacturing process in described other regions of naked eye 3 D function panel 10 is identical with region 201, and the manufacture method of described naked eye 3 D function panel 10 includes:
Step 301, on the substrate being formed with holding wire metal level 101 deposit photoresist 104, specifically as shown in Figure 4.
Concrete, deposition holding wire metal level 101 first over the glass substrate 100, the grid line metal that the metal used by described holding wire metal level 101 is conventional in can manufacturing with array base palte is identical, and then described holding wire metal level 101 deposits photoresist 104 again.
Step 302, by the second mask plate, the substrate being formed with described photoresist 104 it is exposed and develops, obtaining the first photoresist layer 1044, specifically as shown in Figure 5.
Wherein, described second mask plate is common mask plate, including transmission region and two, light tight region part, described light tight region is in requisition for the region forming the first holding wire 1011 and secondary signal line 1012, described transmission region correspondence removed other regions of the first holding wire 1011 and secondary signal line 1012, adopting common mask plate that photoresist is exposed and develop for prior art, the embodiment of the present invention does not repeat again.The second mask plate is adopted to be exposed described photoresist 104, after development, form the first photoresist layer 1044, the pattern of described first photoresist layer is the first holding wire 1011 and the pattern of secondary signal line 1012 correspondence, Fig. 5 (a) is for forming the profile along Fig. 5 (b) line A-A in the region 201 of the metacoxal plate of the first photoresist layer, the pattern of the first photoresist layer in region 201 as can be known from Fig. 5(b).
Step 303, employing wet-etching technique remove the described holding wire metal level 101 not covered by described first photoresist layer 1044, concrete as shown in Fig. 6 (a) and Fig. 6 (b).
Fig. 6 (a), for removing substrate after the described holding wire metal level 101 that do not covered by described first photoresist layer 1044 along the profile of Fig. 6 (b) line A-A, can be seen that the pattern removed region 201 after the described holding wire metal level 101 not covered by described first photoresist layer 1044 from Fig. 6 (b).
Step 304, remove described first photoresist layer 1044, form described first holding wire 1011 and described secondary signal line 1012, specifically as shown in Figure 7.
Common, the first photoresist layer 1044 can be removed by stripping technology, the first holding wire 1011 and the secondary signal line 1012 that make the first photoresist layer 1044 covering reveal, described removing the first photoresist layer 1044 for prior art by stripping technology, this is not repeated by the embodiment of the present invention.Fig. 7 (a) along the profile of Fig. 7 (b) line A-A, can be seen that the pattern removed region 201 after described first photoresist layer 1044 for the substrate after described first photoresist layer 1044 of removal from Fig. 7 (b).
Step 305, on the substrate being formed with described first holding wire 1011 and described secondary signal line 1012, deposit described passivation layer 102, specifically as shown in Figure 8.
Wherein, described passivation layer 102 can strengthen chemical vapour deposition technique (PlasmaEnhancedChemicalVaporDeposition is called for short PECVD) deposition by using plasma, and its thickness range can be such as
Step 306, on described passivation layer 102 deposit photoresist 104, specifically as shown in Figure 9.
Common, described photoresist 104 can strengthen chemical vapour deposition technique (PlasmaEnhancedChemicalVaporDeposition is called for short PECVD) deposition by using plasma.
Step 307, by the second mask plate, described photoresist 104 it is exposed and develops, forming photoresist half member-retaining portion 1041, part 1042 is fully retained for photoresist and part 1043 removed completely by photoresist, specifically as shown in Figure 10.
Wherein, described second mask plate is gray tone mask plate or intermediate tone mask plate, including complete transmission region, semi-transparent region and light tight region three part, in all embodiments of the invention, the described photoresist 104 of indication is positive photoresist, by the second mask plate, described photoresist 104 is exposed and develops, namely described photoresist removes part 1043 completely for complete exposure area, the complete transmission region of corresponding second mask plate；Described photoresist half member-retaining portion 1041 is half-exposure region, the semi-transparent region of corresponding second mask plate, described photoresist is fully retained part 1042 for not exposure area, the complete light tight region of corresponding second mask plate, example, the thickness of described photoresist half member-retaining portion 1041 is 0.6 μm～1.2 μm, and it is 2 μm～3 μm that described photoresist is fully retained the thickness of part 1042.Figure 10 (a) for photoresist 104 being exposed by the second mask plate, the metacoxal plate that develops is along the profile of Figure 10 (c) line A-A, Figure 10 (b) for photoresist 104 being exposed by the second mask plate, the metacoxal plate that develops along the profile of Figure 10 (c) line B-B, Figure 10 (c) forms photoresist half member-retaining portion 1041 for region 201, photoresist is fully retained part 1042 and the pattern after part 1043 removed completely by photoresist.
Step 208, employing dry carving technology are removed photoresist and are removed the passivation layer 102 of part 1043 correspondence completely, form the first passivation layer via hole 1021 and the second passivation layer via hole 1022, specifically as shown in figure 11.
Figure 11 (a) removes the metacoxal plate profile along Figure 11 (c) line A-A of the passivation layer 102 of part 1043 correspondence completely for removal photoresist, Figure 11 (b) removes the metacoxal plate of passivation layer 102 of part 1043 correspondence along the profile of Figure 11 (c) line B-B completely for removing photoresist, and Figure 11 (c) removes the pattern after the passivation layer 102 that part 1043 correspondence removed completely by photoresist for region 201.
Step 309, employing cineration technics remove the photoresist 104 of photoresist half member-retaining portion 1041, specifically as shown in figure 12.
Figure 12 (a) is for removing the metacoxal plate profile along Figure 12 (c) line A-A of the photoresist 104 of photoresist half member-retaining portion 1041, Figure 12 (b) is for removing the metacoxal plate profile along Figure 12 (c) line B-B of the photoresist 104 of photoresist half member-retaining portion 1041, and Figure 12 (c) removes the pattern after the photoresist 104 of photoresist half member-retaining portion 1041 for region 201.
Step 310, remove photoresist half member-retaining portion 1041 photoresist 104 after substrate on deposition transparent conductive film 103, specifically as shown in figure 13.
Here, described transparent conductive film 103 can adopt the transparent conductive material such as indium tin oxide (IndiumTinOxide is called for short ITO) or indium-zinc oxide (IndiumZincOxide is called for short IZO).Described transparent conductive film 103 can adopt the method for low temperature depositing to deposit on the substrate 10, and wherein, the thickness range of described transparent conductive film 103 can be such asFigure 13 (a) is for depositing the metacoxal plate profile along Figure 13 (c) line A-A of transparent conductive film 103, Figure 13 (b) is for depositing transparent conductive film 103 substrate profile along Figure 13 (c) line B-B, and Figure 13 (c) deposits the pattern after transparent conductive film 103 for region 201.
Step 311, employing stripping technology are removed described photoresist and the photoresist 104 of part 1042 are fully retained, make described photoresist that the photoresist 104 of part 1042 be fully retained and transparent conductive film 103 that described photoresist is fully retained in part 1042 to cover is stripped simultaneously, form the first transparency electrode 1031 and described second transparency electrode 1032, specifically as shown in figure 14.
Common, described stripping technology is remove described photoresist the photoresist 104 of part 1042 is fully retained, so, described photoresist is fully retained the transparent conductive film of part 1042 disposed thereon and is removed simultaneously, leaves behind the first transparency electrode 1031 of required formation and described second transparency electrode 1032.Figure 14 (a) is fully retained the metacoxal plate profile along Figure 14 (c) line A-A of the photoresist 104 of part 1042 for the described photoresist of removal, Figure 14 (b) is fully retained the metacoxal plate of photoresist 104 of part 1042 along the profile of Figure 14 (c) line B-B for removing described photoresist, and Figure 14 (c) removes the pattern after the photoresist 104 that described photoresist is fully retained part 1042 for region 201.
The manufacture method of the naked eye 3 D function panel that the embodiment of the present invention provides, when manufacturing described naked eye 3 D function panel, first pass through a patterning processes, the substrate being formed with holding wire metal level is formed holding wire, then pass through a patterning processes, half-exposure technology is adopted to form passivation layer and passivation layer via hole on the substrate being formed with described holding wire, and photoresist half member-retaining portion and the photoresist on passivation layer is fully retained part, then on the substrate being formed with described passivation layer, form transparency electrode, compared to prior art, decrease the number of times of patterning processes, improve the production capacity of volume production product, reduce cost.
One of ordinary skill in the art will appreciate that: all or part of step realizing said method embodiment can be completed by the hardware that programmed instruction is relevant, aforesaid program can be stored in a computer read/write memory medium, this program upon execution, performs to include the step of said method embodiment；And aforesaid storage medium includes: the various media that can store program code such as ROM, RAM, magnetic disc or CDs.
The above; being only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any those familiar with the art is in the technical scope that the invention discloses; change can be readily occurred in or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with described scope of the claims.
Claims (7)
1. the manufacture method of a naked eye 3 D function panel, it is characterised in that described manufacture method includes:
By a patterning processes, the substrate being formed with holding wire metal level forms the first holding wire and secondary signal line；
By a patterning processes, the substrate being formed with described first holding wire and described secondary signal line forms passivation layer, first passivation layer via hole corresponding with described first holding wire and second passivation layer via hole corresponding with described secondary signal line；
The substrate being formed with described passivation layer is formed the first transparency electrode and the second transparency electrode, described first transparency electrode and described second transparency electrode interval are arranged, described first transparency electrode is connected with described first holding wire by described first passivation layer via hole, and described second transparency electrode is connected with described secondary signal line by described second passivation layer via hole；
Described by a patterning processes, the substrate being formed with described first holding wire and described secondary signal line is formed passivation layer, first passivation layer via hole corresponding with described first holding wire and second passivation layer via hole corresponding with described secondary signal line include:
The substrate being formed with described first holding wire and described secondary signal line deposits described passivation layer；
Described passivation layer deposits photoresist；
By the second mask plate, described photoresist is exposed, after development, form photoresist half member-retaining portion, photoresist is fully retained part and photoresist removal part completely, it is corresponding with described first passivation layer via hole and described second passivation layer via hole that part removed completely by described photoresist, described photoresist half member-retaining portion covers the position needing to form described first transparency electrode and described second transparency electrode, photoresist is fully retained part and covers other regions removed outside photoresist removal part completely and photoresist half member-retaining portion, the thickness of described photoresist half member-retaining portion is fully retained the thickness of part less than described photoresist；
Etch described photoresist and remove the passivation layer that part is corresponding completely, form described first passivation layer via hole and the second passivation layer via hole.
2. manufacture method according to claim 1, it is characterised in that the passivation layer that the described photoresist of described etching removes part corresponding completely includes:
By dry carving technology, etch described photoresist and remove the passivation layer that part is corresponding completely.
3. manufacture method according to claim 1, it is characterised in that the thickness of described photoresist half member-retaining portion is 0.6 μm～1.2 μm, it is 2 μm～3 μm that described photoresist is fully retained the thickness of part.
4. manufacture method according to claim 1, it is characterised in that described form the first transparency electrode on the substrate being formed with described passivation layer and the second transparency electrode includes:
Remove the photoresist of photoresist half member-retaining portion；
Deposition transparent conductive film on the substrate removing after the photoresist of described photoresist half member-retaining portion；
Remove described photoresist by stripping technology and the photoresist of part is fully retained, make described photoresist that partly photoresist is fully retained and described photoresist is fully retained the upper transparent conductive film covered of part and is stripped simultaneously, form the first transparency electrode and described second transparency electrode, described first transparency electrode is connected by described first passivation layer via hole with described first holding wire, and described second transparency electrode is connected by described second passivation layer via hole with described secondary signal line.
5. manufacture method according to claim 4, it is characterised in that the photoresist of described removal described photoresist half member-retaining portion includes:
By cineration technics, remove the photoresist of described photoresist half member-retaining portion.
6. manufacture method according to claim 4, it is characterised in that on described substrate after removing the photoresist of described photoresist half member-retaining portion, deposition transparent conductive film includes:
By the technology of low temperature depositing, the substrate after removing the photoresist of described photoresist half member-retaining portion deposits described transparent conductive film.
7. manufacture method according to claim 1, it is characterised in that described pass through a patterning processes, forms the first holding wire on the substrate being formed with holding wire metal level and secondary signal line includes:
Described holding wire metal level deposits photoresist；
After by the first mask plate described photoresist being exposed, developed, forming the first photoresist layer, the figure of described first photoresist layer is the figure needed for described first holding wire and described secondary signal line；
The described holding wire metal level that etching is not covered by described first photoresist layer；
Remove described first photoresist layer, form described first holding wire and described secondary signal line.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179053A (en) * | 2007-12-05 | 2008-05-14 | 上海广电光电子有限公司 | Thin-film transistor array substrates and manufacturing method therefor |
| KR20110114906A (en) * | 2010-04-14 | 2011-10-20 | 삼성전자주식회사 | Display substrate and method for fabricating the same |
| CN103383925A (en) * | 2013-07-02 | 2013-11-06 | 京东方科技集团股份有限公司 | Display device, signal substrate of naked eye 3D function panel and manufacturing method of signal substrate |
| CN203312295U (en) * | 2013-07-02 | 2013-11-27 | 京东方科技集团股份有限公司 | Signal substrate of naked-eye 3D functional panel and display device |
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| US9258907B2 (en) * | 2012-08-09 | 2016-02-09 | Lockheed Martin Corporation | Conformal 3D non-planar multi-layer circuitry |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179053A (en) * | 2007-12-05 | 2008-05-14 | 上海广电光电子有限公司 | Thin-film transistor array substrates and manufacturing method therefor |
| KR20110114906A (en) * | 2010-04-14 | 2011-10-20 | 삼성전자주식회사 | Display substrate and method for fabricating the same |
| CN103383925A (en) * | 2013-07-02 | 2013-11-06 | 京东方科技集团股份有限公司 | Display device, signal substrate of naked eye 3D function panel and manufacturing method of signal substrate |
| CN203312295U (en) * | 2013-07-02 | 2013-11-27 | 京东方科技集团股份有限公司 | Signal substrate of naked-eye 3D functional panel and display device |
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