CN103940837A - SiC crystal monochromator - Google Patents
SiC crystal monochromator Download PDFInfo
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Abstract
The invention relates to a SiC double-crystal or four-crystal monochromator used for a high-resolution X-ray diffractometer. A 6H-SiC single-crystal (0006) crystal face (Si face or C face) or 4H-SiC single-crystal (0004) crystal face (Si face or C face) is used as a diffraction face, and two or four times of diffraction are carried out through a U-shaped structure crystal (the inner walls of the U-shaped structure crystal are used as two diffractions faces) to respectively form the SiC double-crystal or four-crystal monochromator, or the SiC double-crystal or four-crystal monochromator is formed through four times of diffraction of two U-shaped structure crystals or two or four times of reflection of two or four independent crystal plates so as to obtain a diffracted ray only containing Cu Kalpha1. Compared with a Ge (220) double-crystal or four-crystal monochromator, the SiC double-crystal or four-crystal monochromator comprises 6H-SiC (0006) or 4H-SiC (0004) double crystals, the resolution ratio and the diffraction efficiency to Cu Kalpha1 by the four-crystal monochromator are obviously improved, the diffracted intensity of the monochromator can be improved, and the analysis and test time of the high-resolution X-ray diffractometer can be shortened. The SiC double-crystal or four-crystal monochromator is also suitable for monochromatization of X-ray light sources of a Fe target and a Co target.
Description
Technical field
The present invention relates to a kind of SiC crystal monochromator, particularly the SiC crystal monochromator of high resolution X-ray diffractometry.
Background technology
X-ray diffractometer is to provide the nondestructive detecting instrument that material structure is analyzed, and monochromator is the critical component of X-ray diffractometer.According to analysis purpose difference, the monochromator of X-ray diffractometer is divided into two classes substantially: a class is the monochromator for powdered sample structure analysis, as: high orientation pyrolytic graphite curved-crystal monochromator.X ray first passes through graphite monochromator again by sample, and therefore this monochromator is called again diffracted beam monochromator.Graphite monochromator can remove continuous X-rays and XRF back end and K
βradiation (is the K that removes continuous X-rays and XRF back end and Cu with Ni filter plate when general actual use
βradiation), and can not remove K α
2radiation, is detected the two-wire diffraction peak that provides K α by counter.The feature of this class monochromator is that diffraction efficiency is higher, generally in 24-30% scope.
Another kind of monochromator is as the annex of high resolution X-ray diffractometry, is generally used for the analyses such as the crystalline quality, composition, thickness of monocrystalline rocking curve or film.X ray first passes through monochromator, then by sample, this class monochromator is called again incoming beam monochromator.Eighties of last century the seventies double crystal diffraction technology that grows up, the monochromator that the initial stage makes comprises two crystal, uses the radiation of an optical flat the monochromatic X ray, and then by single crystal samples to be measured, carries out the test of single crystal samples rocking curve.If single crystal samples to be measured is same crystal (being that they have identical Bragg angle) with first optical flat, in the situation that two crystal are rationally placed, can survey in the direction parallel with incoming beam, obtain the analysis result of high strength, high-resolution monocrystalline rocking curve.On the contrary, if single crystal samples to be measured and first optical flat belong to different types of crystal and its d value differs greatly,, due to wavelength dispersion effect, resolution greatly reduces, and makes rocking curve broadening serious.In this case, need to change first optical flat, light path just can be carried out high-precision measurement after recalibrating, and operates very loaded down with trivial detailsly, has therefore limited the application of double-crystal monochromator.
First nineteen thirty-seven DuMond proposes four brilliant monochromator design thoughts, and within 1974, four brilliant monochromators are applied to Synchrotron Radiation Study by Beamont & Hart.The Willem.J.Bartels of nineteen eighty-three U.S. Philips company proposes the brilliant monochromator of channel-type four (seeing United States Patent (USP): US4567605).It is to be made up of the crystal of two U-shaped structures, as two reflectings surface, (plane of crystal is Ge (110) face to the sidewall of each U-shaped structure crystal, utilize Ge (220) or (440) crystal face as reflecting surface), two U-shaped piece crystal become mirror image to arrange, make diffracted beam from monochromator outgoing and conllinear parallel with incoming beam, solved well the problems referred to above.But use four brilliant monochromators can make X-ray diffraction intensity reduce terribly.In order to improve the diffraction efficiency of monochromator, the Paul Van Der Suis of Philips company of the U.S. in 1994 has proposed asymmetric four brilliant monochromators (seeing United States Patent (USP): US5009043).Adopt the uneven cutting mode of diffractional lattice crystal face of plane of crystal and crystal, improved widely the diffracted intensity of X ray, but the resolution of monochromator decreases.In order to keep certain diffracted intensity, can not reduce again the resolution of monochromator, the Vladimir A.Kogan of Philips company of the U.S. in 2002 has developed
mirror and the technology (seeing United States Patent (USP): US6359954) that Ge bis-is brilliant or four brilliant monochromators are integrated, utilize Gobel mirror that quasi-parallel light is provided, and as the incoming beam of Ge tetra-brilliant monochromators, improved widely the diffraction efficiency of monochromator.
At present external many companies, the D8Discover high resolution X-ray diffractometry that X ' the Pert PRO high resolution X-ray diffractometry of producing as the UltimaIV high resolution X-ray diffractometry of Japanese Rigaku company, Dutch PANalytical company and German Bruker AXS company produce all adopt the brilliant monochromator of Ge tetra-or
mirror adds the brilliant monochromator Combined-operating mode of Ge tetra-.
In a word, although the brilliant monochromator resolution of Ge tetra-is very high, its diffracted intensity has reduced widely.Therefore in order to improve its diffracted intensity, except improving power, the use of X source
mirror provides quasi-parallel light, crystal to take outside asymmetrical cutting mode, can also find the crystalline material that diffraction efficiency is higher and replace Ge monocrystalline, realizes the object that improves high resolution X-ray diffractometry diffracted intensity.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, the invention provides a kind of high resolution X-ray diffractometry crystal monochromator, described crystal monochromator comprises two 6H-SiC or 4H-SiC wafer, and two wafers are the two brilliant monochromators of formation that are arranged in parallel; Or the 6H-SiC that described crystal monochromator comprises a U-shaped structure or 4H-SiC wafer, the sidewall of described U-shaped structure, as two reflectings surface, forms two brilliant monochromators.
The present invention also provides a kind of high resolution X-ray diffractometry crystal monochromator, described crystal monochromator comprises four 6H-SiC or 4H-SiC wafer, described four wafers are arranged in parallel between two, form two two brilliant monochromators, described two two brilliant monochromators are mirror image symmetric offset spread, form four brilliant monochromators; Or the 6H-SiC that described crystal monochromator comprises two U-shaped structures or 4H-SiC crystal, the 6H-SiC of described two U-shaped structures or 4H-SiC crystal are mirror image to be arranged, and forms four brilliant monochromators.
Further, (0004) face of (0006) face of first-selected 6H-SiC monocrystalline or 4H-SiC monocrystalline is as diffraction surfaces.
Further, can be C face as (0006) face of described 6H-SiC monocrystalline or (0004) face of described 4H-SiC monocrystalline of diffraction surfaces, can be also Si face.
Further, described 6H-SiC plane of crystal is parallel with (0006) diffraction surfaces, and described 4H-SiC plane of crystal is parallel with (0004) diffraction surfaces.
Further, on high resolution X-ray diffractometry, the direction of determining maximum reflectivity by rotation wafer or crystal column is as optical direction.
Further, first-selection is processed into trench structure on a complete 6H-SiC or 4H-SiC crystal, the sidewall of described groove is two (0006) crystal faces or (0004) crystal face being parallel to each other, and forms a double-crystal monochromator as reflecting surface; Two double-crystal monochromators, with mirror image symmetric offset spread, form four brilliant monochromators.
Further, a complete 6H-SiC crystal and a complete 4H-SiC crystal are processed into respectively to trench structure, the sidewall of groove is two (0006) crystal faces and two (0004) crystal faces that are parallel to each other, form two double-crystal monochromators as diffraction surfaces, two double-crystal monochromators, with mirror image symmetric offset spread, form four brilliant monochromators.
Further, form twin crystal or four brilliant monochromators two or four SiC wafers and comprise 4H-SiC and 6H-SiC, diffraction surfaces can be that Si face can be also C face.
Compared with (220) twin crystal of Ge in prior art or four brilliant monochromators, twin crystal or the four brilliant monochromators of 6H-SiC disclosed by the invention (0006) or 4H-SiC (0004) have following beneficial effect:
To Cu K α
1resolution and diffraction efficiency be significantly increased, can increase the diffracted intensity of monochromator, shorten analysis, test duration of high resolution X-ray diffractometry.Described monochromator is also applicable to the monochromatization of the X ray light source of Fe target, Co target.
Brief description of the drawings
Fig. 1 is the high-resolution x ray double-crystal monochromator schematic diagram of taking 6H-SiC (0006) face of symmetrical cutting to form as the U-shaped block structure crystal of reflecting surface.
Fig. 2 is the high-resolution x ray double-crystal monochromator schematic diagram of taking 4H-SiC (0004) face of symmetrical cutting to form as the U-shaped block structure crystal of reflecting surface.
Fig. 3 takes 6H-SiC (0006) face of symmetrical cutting as reflecting surface, the high-resolution X ray double-crystal monochromator schematic diagram of two wafer compositions.
Fig. 4 takes 4H-SiC (0004) face of symmetrical cutting as reflecting surface, the high-resolution X ray double-crystal monochromator schematic diagram of two wafer compositions.
Fig. 5 adopts symmetrical (0006) face of 6H-SiC cutting and (0004) face of 4H-SiC as reflecting surface, the high-resolution X ray double-crystal monochromator schematic diagram of 6H-SiC, the each composition of 4H-SiC wafer.
Fig. 6 takes 6H-SiC (0006) face of symmetrical cutting as reflecting surface, two brilliant monochromator schematic diagram of high-resolution x ray four that U-shaped block structure crystal forms.
Fig. 7 takes 4H-SiC (0004) face of symmetrical cutting as reflecting surface, two brilliant monochromator schematic diagram of high-resolution x ray four that U-shaped block structure crystal forms.
Fig. 8 takes respectively symmetrical 4H-SiC (0004) face cutting and 6H-SiC (0006) face as reflecting surface, two brilliant monochromator schematic diagram of high-resolution x ray four that U-shaped block structure crystal forms.
Fig. 9 takes 6H-SiC (0006) face of symmetrical cutting as reflecting surface, every two composition double-crystal monochromators in four wafer, two groups of symmetrical brilliant monochromator schematic diagram of high-resolution X ray four of placing composition of double-crystal monochromator mirror image.
Figure 10 takes 4H-SiC (0004) face of symmetrical cutting as reflecting surface, every two composition double-crystal monochromators in four wafer, two groups of symmetrical brilliant monochromator schematic diagram of high-resolution X ray four of placing composition of double-crystal monochromator mirror image.
Figure 11 takes respectively symmetrical 4H-SiC (0004) face cutting and 6H-SiC (0006) face as reflecting surface, every two composition double-crystal monochromators in four wafer, two groups of symmetrical brilliant monochromator schematic diagram of high-resolution X ray four of placing composition of double-crystal monochromator mirror image.
Embodiment
The diffracted intensity of crystal and the structure of crystal, physical property, crystalline quality are closely related.The element atomic number of constituent material is lower, and its X-ray absorption coefficient is less; In addition, the Debye temperature of material is higher, and the rigidity of its atomic plane is stronger, and the effective atomic plane that participates in diffraction can increase, and a small amount of atomic plane can obtain high reflectivity, has overcome the X ray absorption problem that large crystal penetration depth may cause.Therefore select material that the little element of atomic number forms and the high material of Debye temperature to be all conducive to improve the diffracted intensity of crystal.
Two kinds of elements of the Si that SiC comprises and C are all little than Ge Atom of Elements, and therefore SiC wants to the absorption of X ray compared with Ge that weak (Ge is 75.6cm to the mass absorption coefficient of X ray
2/ g, SiC is 43.9cm to the mass absorption coefficient of X ray
2/ g), the Debye temperature of SiC is up to 1200K in addition, and only 374K of the Debye temperature of Ge, therefore a small amount of atomic plane of SiC can obtain high reflectance.In addition, present high-quality SiC crystal can obtain, and these are all for the manufacture of high reflectance SiC crystal monochromator provides possibility.
Monochromator is made the crystal face (being that its crystal face has large structure factor) that also will consider to choose high reflection power in crystal as reflecting surface, to obtain large diffracted intensity.Using 6H-SiC and 4H-SiC crystal as example: can choose (0004) crystal face (structure factor amplitude 39.67) of structure factor maximum in (0006) crystal face (structure factor amplitude 62.22) of structure factor maximum in 6H-SiC crystal and 4H-SiC crystal as reflecting surface.The theoretical peak reflectivity that calculates 6H-SiC crystal (0006) reflecting surface and 4H-SiC crystal (0004) diffraction surfaces is 93.88%, and its reflection live width (representing the resolution of crystal for X ray reflection) is 7.47aresec; The peak reflectivity of (220) reflecting surface of Ge is 92.05%, and reflection live width is 13.16arcsec.Carry out after polarization correction, the peak reflectivity of 6H-SiC crystal (0006) crystal face and 4H-SiC crystal (0004) crystal face is 92.29%, reflection live width is 6.20aresec, and the peak reflectivity of (220) diffraction surfaces of Ge is 89.50%, reflection live width is 9.80arcsec.
The present invention proposes the SiC crystal monochromator that can improve X-ray diffraction intensity.SiC-twin crystal or four brilliant monochromator implementation procedures are as follows:
Brilliant or the four brilliant monochromators of SiC-of the present invention bis-comprise two or four 6H-SiC(or 4H-SiC) wafer, two wafers are to be arranged in parallel and form two brilliant monochromators; Or four wafers are arranged in parallel between two, form two two brilliant monochromators, two two brilliant monochromators are mirror image symmetric offset spread, form four brilliant monochromators; Or on a crystal, process a groove, form so-called U-shaped structure, the sidewall of U-shaped structure, as two reflectings surface, forms two brilliant monochromators; By 6H-SiC(or the 4H-SiC of two U-shaped structures) mirror image of crystal arranges, and forms four brilliant monochromators.What form four brilliant monochromators can select single crystal form,, also can take 6H-SiC and 4H-SiC to mix and form by 6H-SiC or be all made up of 4H-SiC such as all, and a U-shaped piece is 6H-SiC crystal, and another U-shaped piece is 4H-SiC crystal.
First-selected 6H-SiC (0006) crystal face or 4H-SiC (0004) crystal face are as reflecting surface.On high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer (or crystal column), and this direction is decided to be to optical direction.
For the convenient orientation of crystal that regulates is to meet diffraction conditions, first-selected two the U-shaped pieces (because Si, C face on a crystal are strict parallel) that crystal are processed into trench structure, the sidewall of groove is respectively Si face and the C face of 6H-SiC (0006) or 4H-SiC (0004).As (0006) crystal face or (0004) crystal face parallel with plane of crystal (symmetrical cutting) of reflecting surface.
Require the sidewall keeping parallelism of each U-shaped piece crystal, effectively to control the resolution of monochromator.To the plane of crystal as reflecting surface grind, polishing and etching, remove surface damage layer.Two U-shaped piece crystal keep at a certain distance away and become that mirror image is symmetrical to be placed, to the orientation of U-shaped piece crystal is regulated and make to incide the X-ray beam of monochromator or conllinear parallel with the diffracted beam that goes out monochromator.Two U-shaped piece crystal are separately fixed on two rotary disks, adjust the orientation of U-shaped piece crystal by angle fine-adjustment mechanism, the X-ray beam that makes to incide on monochromator crystal strictly meets Bragg diffraction conditions, thereby obtains the very narrow homogeneous X-ray of halfwidth.
For being formed two brilliant monochromators by two crystal flat rafts row or being arranged in parallel between two for the four brilliant monochromators that form by four crystal, need to carry out separately to each wafer the adjusting of two degree of freedom, could meet Bragg diffraction conditions, obtain maximum diffraction intensity, therefore compared with the design of U-shaped block structure, this mode is assembled into the adjustment process more complicated of monochromator.
Specifically describe with reference to the accompanying drawings the preferred embodiments of the present invention.
Embodiment 1
As shown in Figure 1, adopt (0006) face of the symmetrical 6H-SiC crystal cutting as reflecting surface, on a crystal, process two reflectings surface that are parallel to each other and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation crystal column, and this direction is decided to be to optical direction) formation U-shaped block structure, X ray reflects once respectively on each crystal face, form SiC double-crystal monochromator, guarantee to parallel with incoming beam through the X-ray bundle of monochromator outgoing.Regulate the orientation of U-shaped piece crystal by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of 6H-SiC (0006)-double-crystal monochromator will be higher than Ge (220)-double-crystal monochromator (9.80arcsec), and diffraction efficiency (85.45%) will be higher than Ge (220)-double-crystal monochromator (81.04%) simultaneously.
Embodiment 2
As shown in Figure 2, adopt (0004) face of the symmetrical 4H-SiC crystal cutting as reflecting surface, on a crystal, process two reflectings surface that are parallel to each other and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation crystal column, and this direction is decided to be to optical direction) formation U-shaped block structure, X ray reflects once respectively on each crystal face, form SiC double-crystal monochromator, guarantee to parallel with incoming beam through the X-ray bundle of monochromator outgoing.Regulate the orientation of U-shaped piece crystal by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of 4H-SiC (0004)-double-crystal monochromator will be higher than Ge (220)-double-crystal monochromator (9.80arcsec), and diffraction efficiency (85.45%) will be higher than Ge (220)-double-crystal monochromator (81.04%) simultaneously.
Embodiment 3
Adopt (0006) face of the symmetrical 6H-SiC cutting as reflecting surface, process respectively two 6H-SiC wafers and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer, and this direction is decided to be to optical direction), assemble according to frame mode as shown in Figure 3.Relative, the parallel placement of polished surface of two wafers, X ray reflects once respectively on each crystal face, forms SiC double-crystal monochromator, guarantees to parallel with incoming beam through the X-ray bundle of monochromator outgoing.Regulate respectively the orientation of two crystal in double-crystal monochromator by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of 6H-SiC (0006)-double-crystal monochromator will be higher than Ge (220)-double-crystal monochromator (9.80arcsec), and diffraction efficiency (85.45%) will be higher than Ge (220)-double-crystal monochromator (81.04%) simultaneously.
Embodiment 4
Adopt (0004) face of the symmetrical 4H-SiC cutting as reflecting surface, process respectively two 4H-SiC wafers and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer, and this direction is decided to be to optical direction), assemble according to frame mode as shown in Figure 4.Relative, the parallel placement of polished surface of two wafers, X ray reflects once respectively on each crystal face, forms SiC double-crystal monochromator, guarantees to parallel with incoming beam through the X-ray bundle of monochromator outgoing.Regulate respectively the orientation of two crystal in double-crystal monochromator by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of 4H-SiC (0004)-double-crystal monochromator will be higher than Ge (220)-double-crystal monochromator (9.80arcsec), and diffraction efficiency (85.45%) will be higher than Ge (220)-double-crystal monochromator (81.04%) simultaneously.
Embodiment 5
Adopt symmetrical (0006) face of 6H-SiC cutting and (0004) face of 4H-SiC as reflecting surface, process respectively each one of 6H-SiC, 4H-SiC wafer and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer, and this direction is decided to be to optical direction), assemble according to frame mode as shown in Figure 5.Relative, the parallel placement of polished surface of two wafers, X ray reflects once respectively on each crystal face, forms SiC double-crystal monochromator, guarantees to parallel with incoming beam through the X-ray bundle of monochromator outgoing.Regulate respectively the orientation of two crystal in double-crystal monochromator by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of this double-crystal monochromator will be higher than Ge (220)-double-crystal monochromator (9.80arcsec), and diffraction efficiency (85.45%) will be higher than Ge (220)-double-crystal monochromator (81.04%) simultaneously.
Embodiment 6
As shown in Figure 6, adopt (0006) face of the symmetrical 6H-SiC crystal cutting as reflecting surface, on two crystal, process respectively two reflectings surface that are parallel to each other and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation crystal column, and this direction is decided to be to optical direction), form two U-shaped block structures, two U-shaped piece crystal become the symmetrical placement of mirror image, X ray reflects once respectively on each crystal face, form the brilliant monochromator of SiC tetra-, guarantee to parallel or conllinear with incoming beam through the X-ray bundle of monochromator outgoing.Regulate the orientation of each U-shaped piece crystal by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of the brilliant monochromator of 6H-SiC (0006)-tetra-will be higher than the brilliant monochromator of Ge (220)-tetra-(9.80arcsec), and diffraction efficiency (73.82%) will be higher than the brilliant monochromator of Ge (220)-tetra-(67.76%) simultaneously.
Embodiment 7
As shown in Figure 7, adopt (0004) face of the symmetrical 4H-SiC crystal cutting as reflecting surface, on two crystal, process respectively two reflectings surface that are parallel to each other and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation crystal column, and this direction is decided to be to optical direction), form two U-shaped block structures, two U-shaped piece crystal become the symmetrical placement of mirror image, X ray reflects once respectively on each crystal face, form the brilliant monochromator of SiC tetra-, guarantee to parallel or conllinear with incoming beam through the X-ray bundle of monochromator outgoing.Regulate the orientation of each U-shaped piece crystal by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of the brilliant monochromator of 4H-SiC (0004)-tetra-will be higher than the brilliant monochromator of Ge (220)-tetra-(9.80arcsec), and diffraction efficiency (73.82%) will be higher than the brilliant monochromator of Ge (220)-tetra-(67.76%) simultaneously.
Embodiment 8
As shown in Figure 8, adopt (0004) face of the symmetrical 4H-SiC crystal cutting as reflecting surface, on a crystal, process two reflectings surface that are parallel to each other and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation crystal column, and this direction is decided to be to optical direction), form U-shaped block structure; Adopt (0006) face of the symmetrical 6H-SiC crystal cutting as reflecting surface, on another piece crystal, process two reflectings surface that are parallel to each other and form another U-shaped block structure, two U-shaped piece crystal become the symmetrical placement of mirror image, X ray reflects once respectively on each crystal face, form the brilliant monochromator of SiC tetra-, guarantee to parallel or conllinear with incoming beam through the X-ray bundle of monochromator outgoing.Regulate the orientation of each U-shaped piece crystal by angle fine-adjustment mechanism, make it strictly to meet Bragg diffraction, obtain the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of this four brilliant monochromators will be higher than the brilliant monochromator of Ge (220)-tetra-(9.80arcsec), and diffraction efficiency (73.82%) will be higher than the brilliant monochromator of Ge (220)-tetra-(67.76%) simultaneously.
Embodiment 9
Adopt (0006) face of the symmetrical 6H-SiC cutting as reflecting surface, process respectively four 6H-SiC wafers and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer, and this direction is decided to be to optical direction), assemble according to frame mode as shown in Figure 9.Relative, the parallel placement of polished surface of every two wafers, composition double-crystal monochromator system, then two groups of double-crystal monochromator systems become the symmetrical placement of mirror image, X ray reflects once respectively on each crystal face, form the brilliant monochromator of SiC tetra-, guarantee to parallel or conllinear with incoming beam through the X-ray bundle of monochromator outgoing.The orientation that regulates respectively two crystal in each group double-crystal monochromator by angle fine-adjustment mechanism, makes it strictly to meet Bragg diffraction, obtains the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of the brilliant monochromator of 6H-SiC (0006)-tetra-will be higher than the brilliant monochromator of Ge (220)-tetra-(9.80arcsec), and diffraction efficiency (73.82%) will be higher than the brilliant monochromator of Ge (220)-tetra-(67.76%) simultaneously.
Embodiment 10
Adopt (0004) face of the symmetrical 4H-SiC cutting as reflecting surface, process respectively four 4H-SiC wafers and (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer, and this direction is decided to be to optical direction), assemble according to frame mode as shown in figure 10.Relative, the parallel placement of polished surface of every two wafers, composition double-crystal monochromator system, then two groups of double-crystal monochromator systems become the symmetrical placement of mirror image, X ray reflects once respectively on each crystal face, form the brilliant monochromator of SiC tetra-, guarantee to parallel or conllinear with incoming beam through the X-ray bundle of monochromator outgoing.The orientation that regulates respectively two crystal in each group double-crystal monochromator by angle fine-adjustment mechanism, makes it strictly to meet Bragg diffraction, obtains the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of the brilliant monochromator of 4H-SiC (0004)-tetra-will be higher than the brilliant monochromator of Ge (220)-tetra-(9.80arcsec), and diffraction efficiency (73.82%) will be higher than the brilliant monochromator of Ge (220)-tetra-(67.76%) simultaneously.
Embodiment 11
Adopt symmetrical (0004) face of 4H-SiC cutting and (0006) face of 6H-SiC as reflecting surface, process respectively two 4H-SiC wafers (Si face, a C face) and two 6H-SiC wafer (Si faces, a C face) (on high resolution X-ray diffractometry, determine the direction of maximum reflectivity by rotation wafer, and this direction is decided to be to optical direction), assemble according to frame mode as shown in figure 11.Relative, the parallel placement of polished surface of two 4H-SiC wafers, forms a double-crystal monochromator system; Relative, the parallel placement of polished surface of two 6H-SiC wafers, form another double-crystal monochromator system, then two groups of double-crystal monochromator systems become the symmetrical placement of mirror image, X ray reflects once respectively on each crystal face, form the brilliant monochromator of SiC tetra-, guarantee to parallel or conllinear with incoming beam through the X-ray bundle of monochromator outgoing.The orientation that regulates respectively two crystal in each group double-crystal monochromator by angle fine-adjustment mechanism, makes it strictly to meet Bragg diffraction, obtains the very narrow homogeneous X-ray of halfwidth.According to test result, the resolution (6.20aresec) of this four brilliant monochromators will be higher than the brilliant monochromator of Ge (220)-tetra-(9.80arcsec), and diffraction efficiency (73.82%) will be higher than the brilliant monochromator of Ge (220)-tetra-(67.76%) simultaneously.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. a high resolution X-ray diffractometry crystal monochromator, described crystal monochromator comprises two 6H-SiC or 4H-SiC wafer, and two wafers are the two brilliant monochromators of formation that are arranged in parallel; Or the 6H-SiC that described crystal monochromator comprises a U-shaped structure or 4H-SiC wafer, the sidewall of described U-shaped structure, as two reflectings surface, forms two brilliant monochromators.
2. a high resolution X-ray diffractometry crystal monochromator, described crystal monochromator comprises four 6H-SiC or 4H-SiC wafer, and described four wafers are arranged in parallel between two, forms two two brilliant monochromators, described two two brilliant monochromators are mirror image symmetric offset spread, form four brilliant monochromators; Or the 6H-SiC that described crystal monochromator comprises two U-shaped structures or 4H-SiC crystal, the 6H-SiC of described two U-shaped structures or 4H-SiC crystal are mirror image to be arranged, and forms four brilliant monochromators.
3. monochromator according to claim 1 and 2, is characterized in that: (0004) face of (0006) face of first-selected 6H-SiC monocrystalline or 4H-SiC monocrystalline is as diffraction surfaces.
4. monochromator according to claim 3, is characterized in that: (0006) face of described 6H-SiC monocrystalline or (0004) face of described 4H-SiC monocrystalline as diffraction surfaces can be C faces, can be also Si faces.
5. monochromator according to claim 3, is characterized in that: described 6H-SiC plane of crystal is parallel with (0006) diffraction surfaces, and described 4H-SiC plane of crystal is parallel with (0004) diffraction surfaces.
6. monochromator according to claim 1 and 2, is characterized in that: on high resolution X-ray diffractometry, the direction of determining maximum reflectivity by rotation wafer or crystal column is as optical direction.
7. monochromator according to claim 1 and 2, it is characterized in that: first-selection is processed into trench structure on a complete 6H-SiC or 4H-SiC crystal, the sidewall of described groove is two (0006) crystal faces or (0004) crystal face being parallel to each other, and forms a double-crystal monochromator as reflecting surface; Two described double-crystal monochromators, with mirror image symmetric offset spread, form four brilliant monochromators.
8. monochromator according to claim 1 and 2, it is characterized in that: a complete 6H-SiC crystal and a complete 4H-SiC crystal are processed into respectively to trench structure, the sidewall of groove is two (0006) crystal faces and two (0004) crystal faces that are parallel to each other, and forms two double-crystal monochromators as diffraction surfaces; Two described double-crystal monochromators, with mirror image symmetric offset spread, form four brilliant monochromators.
9. monochromator according to claim 1 and 2, is characterized in that: form twin crystal or four brilliant monochromators two or four SiC wafers and comprise 4H-SiC and 6H-SiC, diffraction surfaces can be that Si face can be also C face.
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| CN201410128679.2A CN103940837A (en) | 2014-04-01 | 2014-04-01 | SiC crystal monochromator |
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| CN113056078A (en) * | 2021-04-01 | 2021-06-29 | 中国计量科学研究院 | Double-crystal monochromator mechanism and crystal fine-tuning structure thereof |
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