CN103938181B - A kind of preparation method of silica-based oxynitride film - Google Patents
A kind of preparation method of silica-based oxynitride film Download PDFInfo
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Abstract
The present invention relates to the preparation method of a kind of silica-based oxynitride film, first cleaned substrate is put into the reaction chamber of PECVD device, respectively by Ar, H2Plasma carries out Bombardment and cleaning to substrate, is then passed through SiH at 20～30 DEG C4、NH3、H2Mixed gas, deposits a SiN on substrate after plasmaxThin film, is passed through O2Oxidation a SiNxThin film forms a SiNxOyThin film, utilize big hydrogen dilution method to prepare thin film at a lower temperature, reduce the non-radiative recombination defect in thin film, thus reduce the leakage current after its pressurization, improve the power efficiency of its luminescence so that it is luminous efficiency has the enhancing of the order of magnitude compared with similar membrane electro luminescent device.
Description
Technical field
The present invention relates to the preparation method of a kind of silica-based oxynitride film, be mainly used in electroluminescent device.
Background technology
Silicon substrate laser is because of its low cost and can be mutually compatible with ripe silicon super large-scale integration manufacturing process
Excellent specific property, become the vitals needed for silicon-based monolithic integrated optoelectronic circuit.In recent years, due at amorphous
Silicon oxynitride (a-SiNxOy) thin film is found that gain of light phenomenon, therefore it is considered as to realize silica-based laser
One of ideal chose of device.
The great majority research in past focuses on discussion a-SiNxOyThe photoluminescence property of thin film, and electroluminescent to it
The research report of luminescent device is less.Generally speaking, the main result institute of its electroluminescent device obtained
Two categories below can be summarized as: one is Price professor seminar and the Japan early rice of North Carolina, US university
The Kato of field university teaches seminar and is utilized respectively PECVD technique, under 300-400 DEG C of underlayer temperature
It is prepared for a-SiNxOyMembrane electro luminescent device, but need to just meeting after the high annealing of more than 900 DEG C
Detect the luminescence of device, and its luminous efficiency is not reported；Two is Nanjing University's solid microstructure thing
The Chen Kunji of reason National Key Laboratory teaches seminar and at room temperature utilizes PECVD device to prepare luminescence
Silicon oxynitride (a-SiN:O) membrane electro luminescent device is mixed at yellow green wave band, and by silicon in regulation thin film
Atom and the ratio of nitrogen-atoms, make device light emitting efficiency improve more than 3 times.
The defect and the deficiency that exist are mainly reflected in: the 1) high temperature that under higher temperature, the thin-film device of preparation needs
Anneal processing steps adds the cost that device manufactures；2) under low temperature, the membrane structure of preparation loosens, the finest and close,
Be not amenable to 400 DEG C annealed above, so the leakage current after electroluminescent device pressurization is very big, luminous efficiency
The most relatively low, it is impossible to meet the demand of application.
The reason causing its luminous efficiency low mainly has: 1) a-SiNxOyThin film belongs to insulant, electricity itself
Hinder bigger.Using them as the light emitting devices of light-emitting active layer structure, by electrode injection electronics and hole ratio
More difficult；2) at a higher temperature, a-SiNxOyThin film internal poles is easily generated non-radiative recombination defect, sternly
Ghost image rings quality and the luminescent properties of thin film；3)a-SiNxOyThe refractive index of thin film is more than the refractive index of air,
Thus cause the internal light emission produced of light-emitting film and only have fraction to transmit, light extraction efficiency is relatively low.
Summary of the invention
The present invention is directed to existing technical problem propose one and prepare a-SiNxOyThe method of thin film, relatively
A-SiN is at room temperature deposited with big hydrogen dilution method at a temperature of lowxOyThin film, reduces the non-spoke in thin film
Penetrate complex defect, thus reduce the leakage current after its pressurization, improve the external quantum efficiency of its luminescence so that it is with same
Class membrane electro luminescent device compares luminous efficiency the enhancing of the order of magnitude.
For achieving the above object, the technical solution used in the present invention is:
The preparation method of a kind of silica-based oxynitride film, comprises the following steps:
A) substrate of clean surface is loaded the anti-of plasma enhanced CVD (PECVD) equipment
Answer intracavity, be evacuated to 10-2～10-1Torr；
B) it is passed through argon (Ar), in reaction chamber, keeps pressure 0.2～0.3Torr, temperature 20～30 DEG C, radio frequency
Load power 20～30W, make argon plasma, clean substrate surface with argon ion bombardment, maintain 1～5 minute,
Close Ar gas circuit valve, take out most residual gas；
C) hydrogen (H it is passed through2), keep pressure 0.5～0.6Torr, temperature 20～30 DEG C, radio frequency in reaction chamber
Load power 20～40W, make hydrogen plasma, bombard pre-processed substrate surface with hydrion, maintain 5～10
Minute；
D) silane (SiH it is passed through4), ammonia (NH3), hydrogen (H2) mixed gas, reaction chamber is intrinsic pressure
Remaining by force 0.5～0.6Torr, temperature 20～30 DEG C, radio frequency loads power 20～30W, produces SiH4、NH3、
H2The plasma of mixed gas, deposits amorphous silicon nitride (a-SiN on substratex) thin film, deposition time is tieed up
Hold 7～10 minutes, after reaction terminates, close SiH4、NH3、H2Gas circuit valve, take out most residual gas,
It is passed through Ar, cleaning pipeline and reaction chamber 5～10 minutes, closes Ar gas circuit valve, take out most residual gas；
E) oxygen (O it is passed through2), keep pressure 0.3～0.4Torr, temperature 20～30 DEG C, radio frequency in reaction chamber
Load power 20～30W, produce oxygen plasma, aoxidize a-SiNxThin film forms amorphous silicon oxinitride (a-
SiNxOy) thin film, time maintenance 10～20 minutes, reaction terminates, and closes O2Gas circuit valve, takes out most remnants
Gas, is passed through Ar, cleaning pipeline and reaction chamber 5～10 minutes, closes Ar gas circuit valve, take out most residual gas
Body.
The preparation method of a kind of preferred silica-based oxynitride film, described substrate is silicon chip (Si).
The preparation method of a kind of preferred silica-based oxynitride film, is passed through SiH in described step d)4、
NH3Flow-rate ratio 1:1～1:4.
The preparation method of a kind of preferred silica-based oxynitride film, described step e forms amorphous nitrogen oxygen
After SiClx thin film, by the passivation to amorphous silicon oxynitride silicon thin film of step f, concrete for opening recirculated cooling water
System, reaction cavity is heated to 250～300 DEG C, is passed through H2, in reaction chamber, pressure remains 0.5～0.6Torr,
Radio frequency loads power 50～60W, produces hydrogen plasma, passivation film surface, and the time maintains 10～15 minutes,
Reaction terminates, and closes H2Gas circuit valve, cooling, take out residual gas in most reaction chamber, be passed through Ar, clean pipe
Road and reaction chamber 5～10 minutes, close Ar gas circuit valve, take out most Ar, close closed system and cooling water.
The preparation of electroluminescent (EL) device:
A-SiN by preparationxOyThin film puts into electron beam evaporation equipment, and reaction chamber pressure is evacuated to 10-4～10-3Pa,
It is passed through O2Gas, reaction chamber pressure maintains 10-2～10-1Pa, temperature is 150 DEG C, at a-SiNxOyThin film table
Tin indium oxide (ITO) thin film that face evaporation 500nm is thick, as negative electrode.
Vacuum coating equipment, reaction chamber pressure is utilized to maintain 10-4～10-3Pa, resistive heater melts aluminium wire,
P-Si substrate back is deposited with the Al thin film of 1 μ m thick, as anelectrode.
Utilize tubular annealing stove, be warming up to 400 DEG C, at N2/H2Under (95%/5%) atmosphere, to device annealing 30
Minute.
The electroluminescent device of making is fixed on specimen holder, specimen holder is inserted iHR320 type spectrum test
In the test chamber of instrument, utilize DC source, by specimen holder two probes, device is pressurizeed, different
Use the electroluminescent spectrum of photomultiplier tube detectors part under applied voltage, and record corresponding operating current
Value.
Tubular annealing stove used in this patent: the YFFK60*600/12-2 of Shanghai Yi Feng electric furnace company limited
Type annealing furnace；
PECVD is the NRP-4000 type of NANO MASTER company；
Electron beam evaporation equipment: ZZS450-1/D type, Chengdu Nanguan Machine Co., Ltd；
Vacuum coating equipment: DM-300B type, Beijing Beiyi Innovation Vacuum Technology Co., Ltd.；
IHR320 type spectrum test instrument: HORIBA Jobin Yvon company produces.
Beneficial effect:
The present invention at room temperature deposits a-SiN with big hydrogen dilution methodxOyThin film, the compactness of thin film is carried
Height, quality is improved, then the a-SiN deposited with big hydrogen dilutionxOyThin film is as light-emitting active layer, system
Become a-SiNxOyMembrane electro luminescent device.When device luminescence is the strongest, corresponding injected current density is only
0.030A/cm2, far below the reported technical specification of similar membrane electro luminescent device.Further, its electroluminescent
The power efficiency of light, compared with similar thin-film device, enhances about about 11 times, and luminous efficiency has 1 quantity
The raising that level is above.
Accompanying drawing explanation
Fig. 1 is the EL device structure signal prepared with silica-based oxynitride film of the present invention
Figure.
Fig. 2 (a) is that the Chen Kunji of solid microstructure physics National Key Laboratory of Nanjing University teaches seminar
Electroluminescent (EL) spectrum mixing silicon oxynitride (a-SiN:O) thin-film device at room temperature prepared.
Fig. 2 (b) is the a-SiN prepared by method of the present inventionxOyElectroluminescent of the device that thin film is made
Light (EL) spectrum.
Fig. 3 is electroluminescent device and the a-SiN of a-SiN:O film preparationxOyThe electroluminescent of film preparation
The comparison of device relative power efficiencies.
1, ITO layer 2, a-SiNxOyLayer 3, p-Si layer 4, Al layer
Detailed description of the invention
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings.
Embodiment 1
The preparation method of a kind of silica-based oxynitride film, first prepares the silicon chip substrate of cleaning, specifically
For: alkali cleaning: NH3·H2O:H2O2:H2O=1:2:5, boils 5 minutes, self-boiled 1 minute, and deionized water rushes
Wash multipass, then with pickling: HCl:H2O2:H2O=1:2:6, boils 4 minutes, and self-boiled rinses many in 1 minute
Time, baking oven finally toasts at 100 DEG C 1hr.
A) silicon chip substrate of clean surface is loaded in the reaction chamber of PECVD device, be evacuated down to pressure 10- 2Torr；
B) being passed through Ar, keep pressure 0.2Torr, temperature 20 DEG C in reaction chamber, radio frequency loads power 20W,
Make argon plasma, with argon ion bombardment cleaning silicon chip surface, maintain 1 minute, close Ar gas circuit valve,
Take out most residual gas；
C) it is passed through H2, keeping pressure 0.5Torr, temperature 20 DEG C in reaction chamber, radio frequency loads power 20W,
Make hydrogen plasma, bombard pretreatment silicon chip surface with hydrion, maintain 5 minutes；
D) it is passed through SiH4、NH3、H2Mixed gas, be passed through SiH4、NH3Flow-rate ratio 1:1, reaction chamber
Interior pressure remains 0.5Torr, temperature 20 DEG C, and radio frequency loads power 20W, produces SiH4、NH3、H2Mixed
Close the plasma of gas, silicon chip deposits a-SiNxThin film, deposition time maintains 7 minutes, reaction knot
Shu Hou, closes SiH4、NH3、H2Gas circuit valve, take out most residual gas, be passed through Ar, clean pipeline and
Reaction chamber 5 minutes, closes Ar gas circuit valve, takes out most residual gas；
E) it is passed through O2, keeping pressure 0.3Torr, temperature 20 DEG C in reaction chamber, radio frequency loads power 20W,
Produce oxygen plasma, aoxidize a-SiNxThin film forms a-SiNxOyThin film, time maintenance 10 minutes, reaction
Terminate, close O2Gas circuit valve, takes out most residual gas, is passed through Ar, cleans pipeline and reaction chamber 5 minutes,
Close Ar gas circuit valve, take out most residual gas；
F) to a-SiNxOyThe passivation of thin film, specially opens recirculating cooling water system, and reaction cavity is heated to
250 DEG C, being passed through hydrogen, in reaction chamber, pressure remains 0.5Torr, and radio frequency loads power 50W, produces hydrogen
Plasma, passivation film surface, time maintenance 10 minutes, reaction terminates, and closes hydrogen gas circuit valve,
Cooling, takes out residual gas in most reaction chamber, is passed through argon, cleans pipeline and reaction chamber 5 minutes, closes argon
Gas circuit valve, takes out most argon, closes closed system and cooling water, the a-SiN after being passivatedxOyThin film I.
Embodiment 2
The preparation method of a kind of silica-based oxynitride film, first prepares the silicon chip substrate of cleaning, concrete
For: alkali cleaning: NH3·H2O:H2O2:H2O=1:2:5, boils 4 minutes, self-boiled 2 minutes, and deionized water rushes
Wash multipass, then with pickling: HCl:H2O2:H2O=1:2:6, boils 5 minutes, and self-boiled rinses many in 2 minutes
Time, baking oven finally toasts at 120 DEG C 1.5hr.
A) silicon chip substrate of clean surface is loaded in the reaction chamber of PECVD device, be evacuated to pressure 10- 1Torr；
B) being passed through Ar, keep pressure 0.3Torr, temperature 30 DEG C in reaction chamber, radio frequency loads power 30W,
Make argon plasma, with argon ion bombardment cleaning silicon chip surface, maintain 5 minutes, close Ar gas circuit valve,
Take out most residual gas；
C) it is passed through H2, keeping pressure 0.6Torr, temperature 30 DEG C in reaction chamber, radio frequency loads power 40W,
Make hydrogen plasma, bombard pretreatment silicon chip surface with hydrion, maintain 10 minutes；
D) it is passed through SiH4、NH3、H2Mixed gas, be passed through SiH4、NH3Flow-rate ratio 1:4, reaction chamber
Interior pressure remains 0.6Torr, temperature 30 DEG C, and radio frequency loads power 30W, produces SiH4、NH3、H2Mixed
Close the plasma of gas, silicon chip deposits a-SiNxThin film, deposition time maintains 10 minutes, reaction knot
Shu Hou, closes SiH4、NH3、H2Gas circuit valve, take out most residual gas, be passed through Ar, clean pipeline and
Reaction chamber 10 minutes, closes Ar gas circuit valve, takes out most residual gas；
E) it is passed through O2, keeping pressure 0.4Torr, temperature 30 DEG C in reaction chamber, radio frequency loads power 30W,
Produce oxygen plasma, aoxidize a-SiNxThin film forms a-SiNxOyThin film, time maintenance 20 minutes, reaction
Terminate, close O2Gas circuit valve, takes out most residual gas, is passed through Ar, cleans pipeline and reaction chamber 10 minutes,
Close Ar gas circuit valve, take out most residual gas；
F) to a-SiNxOyThe passivation of thin film, specially opens recirculating cooling water system, and reaction cavity is heated to
300 DEG C, being passed through hydrogen, in reaction chamber, pressure remains 0.6Torr, and radio frequency loads power 60W, produces hydrogen
Plasma, passivation film surface, time maintenance 15 minutes, reaction terminates, and closes hydrogen gas circuit valve,
Cooling, takes out residual gas in most reaction chamber, is passed through argon, cleans pipeline and reaction chamber 10 minutes, closes argon
Gas gas circuit valve, takes out most argon, closes closed system and cooling water, the a-SiN after being passivatedxOyThin film II.
Embodiment 3
The preparation method of a kind of silica-based oxynitride film, first prepares the silicon chip substrate of cleaning, concrete
For: alkali cleaning: NH3·H2O:H2O2:H2O=1:2:5, boils 4 minutes, self-boiled 2 minutes, and deionized water rushes
Wash multipass, then with pickling: HCl:H2O2:H2O=1:2:6, boils 5 minutes, and self-boiled rinses many in 2 minutes
Time, baking oven finally toasts at 110 DEG C 1.5hr.
A) silicon chip substrate of clean surface is loaded in the reaction chamber of PECVD device, be evacuated to pressure 10- 1Torr；
B) being passed through Ar, keep pressure 0.25Torr, temperature 25 DEG C in reaction chamber, radio frequency loads power 25W,
Make argon plasma, with argon ion bombardment cleaning silicon chip surface, maintain 3 minutes, close Ar gas circuit valve,
Take out most residual gas；
C) it is passed through H2, keeping pressure 0.55Torr, temperature 25 DEG C in reaction chamber, radio frequency loads power 30W,
Make hydrogen plasma, bombard pretreatment silicon chip surface with hydrion, maintain 7 minutes；
D) it is passed through SiH4、NH3、H2Mixed gas, be passed through SiH4、NH3Flow-rate ratio 1:3, reaction chamber
Interior pressure remains 0.56Torr, temperature 25 DEG C, and radio frequency loads power 25W, produces SiH4、NH3、H2
The plasma of mixed gas, deposits a-SiN on silicon chipxThin film, deposition time maintains 9 minutes, reaction
After end, close SiH4、NH3、H2Gas circuit valve, take out most residual gas, be passed through Ar, clean pipeline
With reaction chamber 8 minutes, close Ar gas circuit valve, take out most residual gas；
E) it is passed through O2, keeping pressure 0.35Torr, temperature 25 DEG C in reaction chamber, radio frequency loads power 25W,
Produce oxygen plasma, aoxidize a-SiNxThin film forms a-SiNxOyThin film, time maintenance 15 minutes, reaction
Terminate, close O2Gas circuit valve, takes out most residual gas, is passed through Ar, cleans pipeline and reaction chamber 8 minutes,
Close Ar gas circuit valve, take out most residual gas；
F) to a-SiNxOyThe passivation of thin film, specially opens recirculating cooling water system, and reaction cavity is heated to
270 DEG C, being passed through hydrogen, in reaction chamber, pressure remains 0.55Torr, and radio frequency loads power 55W, produces hydrogen
Plasma, passivation film surface, time maintenance 12 minutes, reaction terminates, and closes hydrogen gas circuit valve,
Cooling, takes out residual gas in most reaction chamber, is passed through argon, cleans pipeline and reaction chamber 8 minutes, closes argon
Gas circuit valve, takes out most argon, closes closed system and cooling water, the a-SiN after being passivatedxOyThin film III.
The preparation of electroluminescent device and test:
A-SiN by preparationxOyThin film puts into electron beam evaporation equipment, and reaction chamber pressure is evacuated to 10-4Pa, is passed through
O2Gas, reaction chamber pressure maintains 10-2Pa, temperature is 150 DEG C, at a-SiNxOyFilm surface evaporation 500
The ito thin film that nm is thick, as negative electrode.
Vacuum coating equipment, reaction chamber pressure is utilized to maintain 10-4Pa, resistive heater melts aluminium wire, at p-Si
Substrate back is deposited with the Al thin film of 1 μ m thick, as anelectrode.
Utilize tubular annealing stove, be warming up to 400 DEG C, at N2/H2Under (95%/5%) atmosphere, El element is moved back
Fire 30 minutes.
The EL of making is fixed on specimen holder, specimen holder is inserted the survey of iHR320 type spectrum test instrument
Examination intracavity, utilizes DC source, is pressurizeed device by specimen holder two probes, at different applied voltages
The electroluminescent spectrum of lower use photomultiplier tube detectors part, and record corresponding working current value.
Fig. 2 (a) is that the Chen Kunji of solid microstructure National Laboratory of Nanjing University teaches seminar at room temperature
Electroluminescent (EL) spectrum mixing silicon oxynitride (a-SiN:O) thin-film device of preparation, [Appl.Phys.Lett.
91,111104(2007)].Fig. 2 (b) is the a-SiN utilizing the method described in invention to preparexOyThin-film device
EL composes.Visible under identical bias voltage, a-SiN prepared by method of the present inventionxOyThin film is electroluminescent
The operating current of luminescent device more than low 1 order of magnitude, significantly reduces device than a-SiN:O thin-film device
The leakage current of part.
In Fig. 3, we utilize the integrated intensity of EL to come the existing Nanjing of comparison divided by the density of input electric power
Solid microstructure National Laboratory of university Chen Kunji professor seminar at room temperature prepare mix silicon oxynitride (a-
SiN:O) a-SiN prepared by thin-film device and the present inventionxOyThe power efficiency of membrane electro luminescent device relative
Size.A-SiN prepared by the visible present inventionxOyThe maximum power efficiency of membrane electro luminescent device is a-SiN:O
About 12 times of thin-film device maximal efficiency, the efficiency of electroluminescent device significantly improves.
Although in description being illustrated embodiments of the present invention, but these embodiments are intended only as
Prompting, should not limit protection scope of the present invention.Carry out various province without departing from the spirit and scope of the present invention
Slightly, replace and change should be included in protection scope of the present invention.
Claims (4)
1. the preparation method of a silica-based oxynitride film, it is characterised in that comprise the following steps:
A) substrate of clean surface is loaded in the reaction chamber of plasma enhanced CVD equipment, take out
To 10-2～10-1Torr；
B) being passed through argon, keep pressure 0.2～0.3Torr, temperature 20～30 DEG C in reaction chamber, radio frequency loads merit
Rate 20～30W, makes argon plasma, cleans substrate surface with argon ion bombardment, maintains 1～5 minute,
Close argon gas circuit valve, take out most residual gas；
C) being passed through hydrogen, keep pressure 0.5～0.6Torr, temperature 20～30 DEG C in reaction chamber, radio frequency loads merit
Rate 20～40W, makes hydrogen plasma, bombards pre-processed substrate surface with hydrion, maintains 5～10 points
Clock；
D) being passed through the mixed gas of silane, ammonia, hydrogen, in reaction chamber, pressure remains 0.5～0.6Torr,
Temperature 20～30 DEG C, radio frequency loads power 20～30W, produces silane, ammonia, hydrogen gas mixture
Plasma, on substrate deposit amorphous silicon nitride films, deposition time maintain 7～10 minutes,
After reaction terminates, close silane, ammonia, the gas circuit valve of hydrogen, take out most residual gas, be passed through argon
Gas, cleaning pipeline and reaction chamber 5～10 minutes, close argon gas circuit valve, take out most residual gas；
E) being passed through oxygen, keep pressure 0.3～0.4Torr, temperature 20～30 DEG C in reaction chamber, radio frequency loads merit
Rate 20～30W, produces oxygen plasma, and it is thin that oxidation amorphous silicon nitride films forms amorphous silicon oxinitride
Film, time maintenance 10～20 minutes, reaction terminates, and closes oxygen gas circuit valve, takes out most residual gas,
It is passed through argon, cleaning pipeline and reaction chamber 5～10 minutes, closes argon gas circuit valve, take out most remnants
Gas.
The preparation method of silica-based oxynitride film the most according to claim 1, it is characterised in that: institute
The substrate stated is silicon chip.
The preparation method of silica-based oxynitride film the most according to claim 1, it is characterised in that: step
Rapid d is passed through silane and ammonia flow ratio for 1:1～1:4.
The preparation method of silica-based oxynitride film the most according to claim 1, it is characterised in that: step
After rapid e forms amorphous silicon oxynitride silicon thin film, by the passivation to amorphous silicon oxynitride silicon thin film of step f,
Concrete for opening recirculating cooling water system, reaction cavity is heated to 250～300 DEG C, is passed through hydrogen,
In reaction chamber, pressure remains 0.5～0.6Torr, and radio frequency loads power 50～60W, produces hydrogen plasma
Body, passivation film surface, time maintenance 10～15 minutes, reaction terminates, and closes hydrogen gas circuit valve,
Cooling, takes out residual gas in most reaction chamber, is passed through argon, cleans pipeline and reaction chamber 5～10 minutes,
Close argon gas circuit valve, take out most argon, close closed system and cooling water.
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| CN113437164B (en) * | 2021-06-15 | 2023-02-17 | 南京理工大学泰州科技学院 | Photoconductive all-silicon solar blind ultraviolet detector and manufacturing method thereof |
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| CN101132042A (en) * | 2007-09-11 | 2008-02-27 | 南京大学 | Method for improving luminous efficiency of oxygen silicon base doped nitride thin-film electroluminescent device |
| CN101648964A (en) * | 2008-08-12 | 2010-02-17 | 气体产品与化学公司 | Precursors for depositing silicon-containing films and methods for making and using same |
| WO2009149167A3 (en) * | 2008-06-02 | 2010-03-11 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
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| US3765935A (en) * | 1971-08-10 | 1973-10-16 | Bell Telephone Labor Inc | Radiation resistant coatings for semiconductor devices |
| CN1363717A (en) * | 2001-12-07 | 2002-08-14 | 中国科学院长春光学精密机械与物理研究所 | Low-temp magnetically controlled sputtering technology for preparing non-stress O-N-Si film |
| CN101132042A (en) * | 2007-09-11 | 2008-02-27 | 南京大学 | Method for improving luminous efficiency of oxygen silicon base doped nitride thin-film electroluminescent device |
| WO2009149167A3 (en) * | 2008-06-02 | 2010-03-11 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
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