CN103935145A - Silk-screen printing method for SED cathode substrate of cross electrode structure - Google Patents
Silk-screen printing method for SED cathode substrate of cross electrode structure Download PDFInfo
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Abstract
The invention discloses a silk-screen printing method for an SED cathode substrate of a cross electrode structure. The method includes the steps that an electrode array is formed on the substrate in a sputtered mode, scanning electrodes are printed on the electrode array, a medium layer is printed on the scanning electrodes, addressing electrodes are printed on the medium layer, and finally an electron emitting thin film is conducted through a sputtering surface to obtain the SED cathode substrate of the cross electrode structure. When the medium layer is printed, the medium layer is made to respectively extend longitudinally to the upper side and the lower side from the scanning electrodes, moreover, the thickness of the extending part of the medium layer is gradually reduced in the extending direction, in this way, insulativity can be ensured, the thickness of the medium layer can be reduced, and height difference of the transverse electrodes and the longitudinal electrodes can be reduced, so that diffusion of the addressing electrodes is restrained, the difficulty of manufacturing the cross electrodes through silk-screen printing is lowered, the success rate of manufacturing the SED cathode substrate is improved, and the silk-screen printing method is a new method used for manufacturing the SED cathode substrate.
Description
Technical field
The invention belongs to display device field, relate to a kind of printing process of dielectric layer, be specifically related to a kind of method for printing screen of SED cathode base of interdigitated electrode design.
Background technology
The surface-conduction-electron emission display (Surface-conduction Electron-emitter Display, SED) that CANON proposes, as the one of FED, its display effect very outstanding in current flat-panel display device.
The video picture principle of SED and traditional cathode-ray picture tube (Cathode Ray Tube, CRT) similar, what be different from CRT is, SED will scribble the glass plate and the glass film plates laid parallel that is covered with exhibiting high surface conduction electron emission source of fluorescent material, such structure makes the thickness of SED can do quite thinly, is easy to panelized, maximization.Meanwhile, the energy consumption of SED is also lower.
The general layout of the electron source array structure of announcing by Canon and known its cathode base of SED driving method, the wherein cross-shaped distribution of electrode, and transverse electrode connects the scanning circuit of drive circuit, longitudinal electrode connects signal modulation circuit, and horizontal and vertical electrode is the two ends in connecting electronic source respectively.In the time making the electrode of chi structure, need to carry out the printing of gradation multilayer, after being completed for printing fabric, between fabric and substrate, can produce the difference in height of can not ignore, especially have larger difference in height in electrode crossing position, the pressure that this height official post silk screen is subject to is inhomogeneous, printing to lower one deck structure causes difficulty, can make cross section especially easily spread and uncrossed part is not easy to undertake the printing of, make the success rate step-down of electrode fabrication, manufacture craft becomes and is difficult to repetition, this has just brought difficulty to the minus plate of serigraphy making interdigitated electrode design.
Summary of the invention
The object of the present invention is to provide a kind of method for printing screen of SED cathode base of interdigitated electrode design, the method can ensure the insulating properties of dielectric layer, can reduce again the difference in height of transverse and longitudinal electrode, thereby suppress the diffusion of addressing electrode, reduce serigraphy and make the difficulty of crossed electrode, improve the success rate that SED cathode base is made.
For achieving the above object, the technical solution used in the present invention comprises the following steps:
1) with magnetron sputtering method some groups of electrodes of sputter on substrate, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode and the second horizontal electrode, and in every group of electrode, between the first electrode and the second electrode, has the gap of 8～20 μ m;
2) on electrod-array, print the horizontal scan electrode of several rows by silk screen print method, make the first electrode of every row in electrod-array share a scan electrode, when printing, scan electrode is printed on to the first electrode one end away from the second electrode, the first electrode is exposed near one end of the second electrode;
3) first on scan electrode, print several dielectric layers by silk screen print method, then on electrod-array and dielectric layer, print the longitudinal addressing electrode of some row by silk screen print method, make cross section spaced apart and insulation by dielectric layer of scan electrode and addressing electrode, and make the second electrode of every row in electrod-array share an addressing electrode, when printing, addressing electrode is printed on to the second electrode one end away from the first electrode, the second electrode is exposed near one end of the first electrode;
Wherein, in the time of the each dielectric layer of printing, both sides are extending longitudinally up and down respectively by scan electrode place to make dielectric layer, and the thickness of the dielectric layer of extension is reduced gradually along bearing of trend;
4) with magnetron sputtering method at the first electrode and the second electrode sputtering surface conduction electron-emitter film on close one end and gap thereof mutually.
Described dielectric layer by scan electrode place respectively up and down both sides extend longitudinally to its one end near or be tangential on the top edge of the second electrode of this unit, the other end near or be tangential on the lower limb of the second electrode of a unit; Or one end near or be tangential on the lower limb of the second electrode of this unit, the other end near or be tangential on the top edge of the second electrode of next unit.
Described dielectric layer comprises at least two-layer dielectric, each layer of dielectric all adopts silk screen print method to be printed and make successively by the undertake the printing of position of panel or silk screen of displacement, the thickness that is positioned at the part on scan electrode in the dielectric layer that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer of extension is reduced gradually along bearing of trend; Wherein the printing parameter of each layer of dielectric of serigraphy is: scraper angle is 76～78 °, and scraper speed is 1.5～2cm/s, and the distance of substrate and scraper is 12.5～15mm.
Described dielectric layer comprises three-layer insulated medium, is respectively ground floor dielectric, second layer dielectric and three-layer insulated medium; When printing, first ground floor dielectric is printed on the design attitude that moves down, on any place in the design attitude and the design attitude that move, then second layer dielectric is printed on to any place of residue in two positions, place, finally by three-layer insulated dielectric printing on final remaining position; Wherein be printed on the transverse axis of the dielectric on design attitude and the transverse axis of scan electrode overlaps; Be printed on the top edge of the dielectric on the design attitude moving down and the top edge of scan electrode overlaps; Be printed on the lower limb of the dielectric on the design attitude moving and the lower limb of scan electrode overlaps.
In described dielectric layer, the thickness of every layer of dielectric is 8～12 μ m, and the thickness that is positioned at the part on scan electrode in dielectric layer is 24～32 μ m.
Form the material of dielectric layer and be the NP-7858R type insulating materials that Japanese NORITAKE company produces, its main component is lead monoxide.
The material that forms the first electrode and the second electrode comprises platinum, copper, nickel, chromium and composite thereof, and its thickness is 10～20nm;
Described scan electrode and the thickness of addressing electrode are 10～15 μ m, and forming scan electrode and addressing electrode is silver;
The thickness of described surface conduction electron emission film is 30nm～60nm, and the material that forms surface conduction electron emission film comprises zinc oxide or palladium oxide.
In described step 1), the design parameter of magnetron sputtering is: operating air pressure is 0.13Pa, and substrate temperature is 150～220 DEG C, and Ar throughput is 20～25sccm, and sputtering power is 150W, and sputtering time is 60～240s.
The design parameter of silk screen print method printing scan electrode and addressing electrode is: scraper angle is 76～78 °, and scraper speed is 2～2.5cm/s, and the distance of substrate and scraper is 12.5～15mm.
In described step 4), the design parameter of magnetron sputtering is: operating air pressure is 0.2Pa, and substrate temperature is 135～150 DEG C, and Ar throughput is 20～25sccm, O
2throughput is 5～30sccm, and sputtering power is 100～150W, and sputtering time is 40～600s.
With respect to prior art, beneficial effect of the present invention is:
In the time making stereochemical structure crossed electrode, make the front transverse electrode of addressing electrode and longitudinal electrode cross section because printed medium layer can exceed substrate certain distance, cause difficulty to the even printing of addressing electrode, easily make silk screen pressurized inequality cause that cross section diffusion is serious and pattern edge part cannot be undertaken the printing of.For addressing this problem, the invention provides a kind of method for printing screen of SED cathode base of interdigitated electrode design, first sputter the first electrode and the second electrode on substrate, then on the first electrode, print scan electrode, printed medium layer on scan electrode again, then on dielectric layer and the second electrode, print addressing electrode, finally, at the gap location sputtering surface conduction electron-emitter film of the first electrode and the second electrode, completed the making of the SED cathode base of interdigitated electrode design.Particularly in the time of printed medium layer, both sides are extending longitudinally up and down respectively by scan electrode place to make dielectric layer, and the thickness of the dielectric layer of extension is reduced gradually along bearing of trend, can ensure like this insulating properties of dielectric layer, reduce again the thickness of dielectric layer, and can reduce the difference in height of transverse and longitudinal electrode, thereby suppress the diffusion of addressing electrode, reduce serigraphy and make the difficulty of crossed electrode, improving the success rate that SED cathode base is made, is a kind of novel method for printing screen of making for SED cathode base.
Further, the present invention is in the time of concrete printed medium layer, by the displacement at least two-layer dielectric of panel or silk screen position printing of undertaking the printing of, both ensured that the part dielectric layer on scan electrode was obtained by multilayer insulation medium stack printing, make the thickness of this part be enough to meet the insulating requirements between scan electrode and addressing electrode, expand again the area coverage of whole dielectric layer simultaneously, not only reduce the probability of electric pole short circuit, and the thickness that makes whole dielectric layer can be level and smooth transition, can reduce the difference in height of transverse and longitudinal electrode, under the prerequisite that ensures dielectric layer insulating properties, reduce its integral thickness, scraper plate pressure while making to print addressing electrode is more easily controlled, effectively suppress the diffusion of addressing electrode, lead portion is also more prone to printing, reduce the difficulty that crossed electrode is made in serigraphy, improve the success rate that SED cathode base is made.Printing process provided by the invention can be widely used in serigraphy and make the intermediate layer in layer stereo structure, difficulty is made in the printing that can reduce to bring because of stereochemical structure in ensureing significant points print thickness, has good result of use and application prospect.
Brief description of the drawings
Fig. 1 is the structural representation of surface-conduction-electron emission display (SED) pixel;
Fig. 2 is the SED cathode base structural representation of a kind of crossed electrode (array) structure;
Fig. 3 is the SED cathode base structural representation of another kind of crossed electrode (array) structure;
Fig. 4 is the flow chart of printing process provided by the invention for the SED cathode base of Fig. 2 structure;
Fig. 5 is the flow chart of printing process provided by the invention for the SED cathode base of Fig. 3 structure;
Wherein: 100 is that lower glass substrate, 110 is that top glass substrate, 130 is that electron emission source, 150 is that device electrode, 160 is that cathode device voltage, 170 is that high voltage anode, 180 is that fluorescent material, 200 is that scan electrode, 210 is that addressing electrode, 220 is that dielectric layer, 221 is that ground floor medium, 222 is that second layer medium, 223 is that the 3rd layer of medium, 230 is that the first electrode, 231 is that the second electrode, 250 is surface conduction electron emission film.
Fig. 6 is the comparison diagram of the SED cathode base of the interdigitated electrode design that makes of traditional silk screen printing process and printing process provided by the invention, and wherein a is that SED cathode base, the b of the interdigitated electrode design that makes of traditional silk screen printing process are the SED cathode base of the interdigitated electrode design that makes of printing process provided by the invention.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Fig. 1 illustrates the structure of a pixel of SED display, and SED has comprised lower glass substrate 100 and top glass substrate 110, and each pixel cell comprises three sub-pixels of RGB, and electron emission source 130 is produced in lower glass substrate 100.Surface conduction electron emission electron source comprises that two device electrode 150(are horizontal scan electrode 200 and longitudinal addressing electrode 210) and surface conduction electron emission film 250.SED display device also comprises a high voltage anode 170 and cathode device voltage 160.When apply DC voltage on device electrode 150 time, surface conduction electron emission film 250 meeting electron emissions, under the voltage of high voltage anode 170 accelerates, electronics impact fluorescence powder 180 is luminous.
Fig. 2 and Fig. 3 illustrate the topology layout design of interdigitated electrode arrays SED cathode base of the present invention, in Fig. 2 and Fig. 3, SED cathode base is mainly made up of scan electrode 200, addressing electrode 210, dielectric layer 220 and 250 4 parts of surface conduction electron emission film, and the drawingdimension of whole cathode base layout is all less.In the topology layout of SED cathode base, the width of scan electrode 200 and addressing electrode 210 is 150 μ m, the slotted section minimum spacing of two electrodes is that 10 μ m(are made up of the first electrode 230 and the second electrode 231), the long 200 μ m in gap, surface conduction electron emission film 250 covers on crack, size is 180 μ m × 180 μ m, adopts the method for magnetron sputtering to make the first electrode 230 and the second electrode 231 to construct the crack part of two electrodes in order to reach the required precision of 10 μ m; Dielectric layer 220 is opened scan electrode and addressing electrode in lap insulation, size is 250 μ m × 250 μ m.The structural design of crossed electrode can make 64 × 64 interdigitated electrode arrays SED cathode bases drive each pixel.The pixel size of this SED cathode base is 600 μ m × 600 μ m, and the light-emitting zone area of SED device is 38.4mm × 38.4mm.
And inventor finds that in the making of 64 × 64 interdigitated electrode arrays SED cathode bases there are the following problems: will successively pass through the printing of scan electrode, dielectric layer and addressing electrode when making, dielectric layer must print the above transverse and longitudinal electrode that could effectively insulate three times, (25～30 μ m) greatly to make dielectric thickness, and scan electrode thickness is also about 10～15 μ m, therefore after first two steps printing, the thickness difference of print is greater than 30 μ m, and therefore, before printing addressing electrode, substrate surface is no longer smooth.The Graphics Design of addressing electrode requires it must can be good at being printed on (lead portion) in substrate of glass, again can be by graphic printing on dielectric layer (transverse and longitudinal electrode lap), so in the time of printing addressing electrode, scraper plate pressure cannot be all be distributed on print, it is very difficult that the printing of addressing electrode just becomes: lead portion is not easy to print on substrate, and transverse and longitudinal lap is easily diffused into and on scan electrode, causes short circuit.Therefore the method for printing screen of the SED cathode base of inventor to interdigitated electrode design improves.
Fig. 4 is the flow chart of the printing process after improvement provided by the invention.Its concrete technology step is: when serigraphy ground floor medium 221, after aiming at, undertake the printing of panel by the print 75 μ m that move up by displacement, make ground floor medium 221 be printed on off-design position and downward 75 μ m places, the foursquare lower limb of medium is just in time tangent with the top edge of the second electrode 231 of the addressing electrode 210 of this unit, and its top edge overlaps with the top edge of scan electrode 200.Corresponding with it, in the time of printing second layer medium 222, print moves down 75 μ m to opposite direction after aiming at, make second layer medium 222 be printed on off-design position and the place of 75 μ m upwards, the second electrode 231 lower limbs of the foursquare top edge of medium and a upper element address electrode 210 are tangent, and lower limb overlaps with the lower limb of this unit scan electrode 200.The 3rd layer of medium 223 can be printed on design attitude, ensures that scan electrode 200 tops and environs still have the thickness of three layers of printed medium, can play good insulating effect.Here it should be noted that, 75 μ m of above-mentioned movement are the size in layout figure, need consider the diffusion of dielectric layer in the time of actual print, therefore move up and down 40-50 μ m, concrete condition is determined according to scraper plate pressure, the rare denseness of medium and laboratory temperature.
Fig. 5 is the flow chart of the printing process after improvement provided by the invention.Its concrete technology step is: when serigraphy ground floor medium 221, after aiming at by displacement silk screen position by the silk screen 75 μ m that move up, make ground floor medium 221 be printed on off-design position and 75 μ m places upwards, the foursquare top edge of medium is just in time tangent with the lower limb of the second electrode 231 of the addressing electrode 210 of this unit, and its lower limb overlaps with the lower limb of scan electrode 200.Corresponding with it, in the time of printing second layer medium 222, after aiming at, silk screen is moved down to 75 μ m to opposite direction, make second layer medium 222 be printed on off-design position and the place of 75 μ m upwards, the second electrode 231 top edges of the foursquare lower limb of medium and next element address electrode 210 are tangent, and top edge overlaps with the top edge of this unit scan electrode 200.The 3rd layer of medium 223 can be printed on design attitude, ensures that scan electrode 200 tops and environs still have the thickness of three layers of printed medium, can play good insulating effect.Here it should be noted that, 75 μ m of above-mentioned movement are the size in layout figure, need consider the diffusion of dielectric layer in the time of actual print, therefore move up and down 40-50 μ m, concrete condition is determined according to scraper plate pressure, the rare denseness of medium and laboratory temperature.
The method for printing screen of the SED cathode base below by specific embodiment to interdigitated electrode design provided by the invention is described in further detail.
Embodiment 1
1) be the electrode that 10nm, material are platinum with magnetron sputtering method some groups of thickness of sputter on substrate, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode 230 and the second horizontal electrode 231, and in every group of electrode, between the first electrode 230 and the second electrode 231, has the gap of 10 μ m; The process conditions of magnetron sputtering are: operating air pressure is 0.13Pa, and substrate temperature is 220 DEG C, and Ar throughput is 25sccm, and sputtering power is 150W, and sputtering time is 240s;
2) on electrod-array, printing several rows thickness by silk screen print method is that 10 μ m, material are the horizontal scan electrode 200 of silver, make the first electrode 230 of every row in electrod-array share a scan electrode 200, when printing, scan electrode 200 is printed on to the first electrode 230 one end away from the second electrode 231, the first electrode 230 is exposed near one end of the second electrode 231; The printing parameter of serigraphy scan electrode is: scraper angle is 76 °, scraper speed is 2cm/s, according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the scan electrode that each printing obtains is 10 μ m;
3) first on scan electrode 200, print several dielectric layers 220 by silk screen print method, then on electrod-array and dielectric layer 220, printing some row thickness by silk screen print method is 10 μ m, material is longitudinal addressing electrode 210 of silver, make cross section spaced apart and insulation by dielectric layer 220 of scan electrode 200 and addressing electrode 210, and make the second electrode 231 of every row in electrod-array share an addressing electrode 210, when printing, addressing electrode 210 is printed on to the second electrode 231 one end away from the first electrode 230, the second electrode 231 is exposed near one end of the first electrode 230, the printing parameter of serigraphy addressing electrode is: scraper angle is for being 76 °, scraper speed is 2cm/s, according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the addressing electrode that each printing obtains is 10 μ m,
Wherein in the time of the each dielectric layer 220 of printing, the top edge of the second electrode 231 of Yu Zhe unit, its one end extending longitudinally, both sides is tangent up and down respectively by scan electrode 200 places to make dielectric layer 220, the lower limb of the second electrode 231 of the other end and a upper unit is tangent, the thickness that is positioned at the part on scan electrode 200 in the dielectric layer 220 that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer 220 of extension is reduced gradually along bearing of trend; The thickness that is wherein positioned at the part on scan electrode 200 in dielectric layer 220 is 27 μ m, and the thickness of dielectric layer 220 is symmetrical along the transverse axis of scan electrode 200; Dielectric layer 220 comprises three-layer insulated medium, is respectively ground floor dielectric 221, second layer dielectric 222 and three-layer insulated medium 223; Referring to Fig. 4, when printing by the displacement panel of undertaking the printing of, first ground floor dielectric 221 is printed on to the design attitude place moving down, then second layer dielectric 222 is printed on to the design attitude place moving, finally three-layer insulated medium 223 is printed on to design attitude place; The top edge that is wherein printed on the ground floor dielectric 221 on the design attitude moving down overlaps with the top edge of scan electrode 200, and the top edge of the second electrode 231 of lower limb and this unit is tangent; The lower limb that is printed on the second layer dielectric 222 on the design attitude moving overlaps with the lower limb of scan electrode 200, and the lower limb of the second electrode 231 of top edge and a upper unit is tangent; The transverse axis that is printed on the three-layer insulated medium 223 on design attitude overlaps with the transverse axis of scan electrode 200; The printing parameter of every layer of dielectric is: scraper angle is 76 °, scraper speed is 1.5cm/s, and according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of every layer of dielectric is 9 μ m.The material of dielectric layer is NP-7858R, and main component is lead monoxide, is produced by Japanese NORITAKE company, can be effectively by the luminous lower plate upper plate that reflexes to, and enhance device luminosity, has good insulating properties too;
4) surface conduction electron emission film 250 in the first electrode 230 and the second electrode 231 palladium oxide material that sputter thickness is 30nm on close one end and gap thereof mutually with magnetron sputtering method; Magnetron sputtering parameter is: operating air pressure is 0.2Pa, and substrate temperature is 135 DEG C, and Ar throughput is 20sccm, O
2throughput is 30sccm, and sputtering power is 100W, and sputtering time is 40s.
Embodiment 2
1) be the electrode that 16nm, material are nickel with magnetron sputtering method some groups of thickness of sputter on substrate, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode 230 and the second horizontal electrode 231, and in every group of electrode, between the first electrode 230 and the second electrode 231, has the gap of 8 μ m; The process conditions of magnetron sputtering are: operating air pressure is 0.13Pa, and substrate temperature is 150 DEG C, and Ar throughput is 20sccm, and sputtering power is 150W, and sputtering time is 120s;
2) on electrod-array, printing several rows thickness by silk screen print method is that 15 μ m, material are the horizontal scan electrode 200 of silver, make the first electrode 230 of every row in electrod-array share a scan electrode 200, when printing, scan electrode 200 is printed on to the first electrode 230 one end away from the second electrode 231, the first electrode 230 is exposed near one end of the second electrode 231; The printing parameter of serigraphy scan electrode is: scraper angle is 78 °, scraper speed is 2.5cm/s, according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the scan electrode that each printing obtains is 15 μ m;
3) first on scan electrode 200, print several dielectric layers 220 by silk screen print method, then on electrod-array and dielectric layer 220, printing some row thickness by silk screen print method is 15 μ m, material is longitudinal addressing electrode 210 of silver, make cross section spaced apart and insulation by dielectric layer 220 of scan electrode 200 and addressing electrode 210, and make the second electrode 231 of every row in electrod-array share an addressing electrode 210, when printing, addressing electrode 210 is printed on to the second electrode 231 one end away from the first electrode 230, the second electrode 231 is exposed near one end of the first electrode 230, the printing parameter of serigraphy addressing electrode is: scraper angle is for being 78 °, scraper speed is 2.5cm/s, according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the addressing electrode that each printing obtains is 15 μ m,
Wherein in the time of the each dielectric layer 220 of printing, the lower limb of the second electrode 231 of Yu Zhe unit, its one end extending longitudinally, both sides is tangent up and down respectively by scan electrode 200 places to make dielectric layer 220, the top edge of the second electrode 231 of the other end and next unit is tangent, the thickness that is positioned at the part on scan electrode 200 in the dielectric layer 220 that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer 220 of extension is reduced gradually along bearing of trend; The thickness that is wherein positioned at the part on scan electrode 200 in dielectric layer 220 is 30 μ m, and the thickness of dielectric layer 220 is symmetrical along the transverse axis of scan electrode 200; Dielectric layer 220 comprises three-layer insulated medium, is respectively ground floor dielectric 221, second layer dielectric 222 and three-layer insulated medium 223; Referring to Fig. 5, when printing, by displacement silk screen, first ground floor dielectric 221 is printed on to the design attitude place moving, then second layer dielectric 222 is printed on to the design attitude place moving down, finally three-layer insulated medium 223 is printed on to design attitude place; The lower limb that is wherein printed on the ground floor dielectric 221 on the design attitude moving overlaps with the lower limb of scan electrode 200, and the lower limb of the second electrode 231 of top edge and this unit is tangent; The top edge that is printed on the second layer dielectric 222 on the design attitude moving down overlaps with the top edge of scan electrode 200, and the top edge of the second electrode 231 of lower limb and next unit is tangent; The transverse axis that is printed on the three-layer insulated medium 223 on design attitude overlaps with the transverse axis of scan electrode 200; The printing parameter of every layer of dielectric is: scraper angle is 78 °, scraper speed is 2cm/s, and according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of every layer of dielectric is 10 μ m.The material of dielectric layer is NP-7858R, and main component is lead monoxide, is produced by Japanese NORITAKE company, can be effectively by the luminous lower plate upper plate that reflexes to, and enhance device luminosity, has good insulating properties too;
4) surface conduction electron emission film 250 in the first electrode 230 and the second electrode 231 zinc oxide material that sputter thickness is 60nm on close one end and gap thereof mutually with magnetron sputtering method; Magnetron sputtering parameter is: operating air pressure is 0.2Pa, and substrate temperature is 150 DEG C, and Ar throughput is 20sccm, O
2throughput is 5sccm, and sputtering power is 150W, and sputtering time is 600s.
Embodiment 3
1) be the electrode that 15nm, material are copper with magnetron sputtering method some groups of thickness of sputter on substrate, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode 230 and the second horizontal electrode 231, and in every group of electrode, between the first electrode 230 and the second electrode 231, has the gap of 10 μ m; The process conditions of magnetron sputtering are: operating air pressure is 0.13Pa, and substrate temperature is 150 DEG C, and Ar throughput is 22sccm, and sputtering power is 150W, and sputtering time is 60s;
2) on electrod-array, printing several rows thickness by silk screen print method is that 10 μ m, material are the horizontal scan electrode 200 of silver, make the first electrode 230 of every row in electrod-array share a scan electrode 200, when printing, scan electrode 200 is printed on to the first electrode 230 one end away from the second electrode 231, the first electrode 230 is exposed near one end of the second electrode 231; The printing parameter of serigraphy scan electrode is: scraper angle is 76 °, scraper speed is 2cm/s, according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the scan electrode that each printing obtains is 10 μ m;
3) first on scan electrode 200, print several dielectric layers 220 by silk screen print method, then on electrod-array and dielectric layer 220, printing some row thickness by silk screen print method is 15 μ m, material is longitudinal addressing electrode 210 of silver, make cross section spaced apart and insulation by dielectric layer 220 of scan electrode 200 and addressing electrode 210, and make the second electrode 231 of every row in electrod-array share an addressing electrode 210, when printing, addressing electrode 210 is printed on to the second electrode 231 one end away from the first electrode 230, the second electrode 231 is exposed near one end of the first electrode 230, the printing parameter of serigraphy addressing electrode is: scraper angle is for being 78 °, scraper speed is 2.5cm/s, according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the addressing electrode that each printing obtains is 15 μ m,
Wherein in the time of the each dielectric layer 220 of printing, the lower limb of the second electrode 231 of Yu Zhe unit, its one end extending longitudinally, both sides is tangent up and down respectively by scan electrode 200 places to make dielectric layer 220, the top edge of the second electrode 231 of the other end and next unit is tangent, the thickness that is positioned at the part on scan electrode 200 in the dielectric layer 220 that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer 220 of extension is reduced gradually along bearing of trend; The thickness that is wherein positioned at the part on scan electrode 200 in dielectric layer 220 is 30 μ m, and the thickness of dielectric layer 220 is symmetrical along the transverse axis of scan electrode 200; Dielectric layer 220 comprises three-layer insulated medium, is respectively ground floor dielectric 221, second layer dielectric 222 and three-layer insulated medium 223; Referring to Fig. 5, when printing by the displacement panel of undertaking the printing of, first ground floor dielectric 221 is printed on to the design attitude place moving, then second layer dielectric 222 is printed on to the design attitude place moving down, finally three-layer insulated medium 223 is printed on to design attitude place; The lower limb that is wherein printed on the ground floor dielectric 221 on the design attitude moving overlaps with the lower limb of scan electrode 200, and the lower limb of the second electrode 231 of top edge and this unit is tangent; The top edge that is printed on the second layer dielectric 222 on the design attitude moving down overlaps with the top edge of scan electrode 200, and the top edge of the second electrode 231 of lower limb and next unit is tangent; The transverse axis that is printed on the three-layer insulated medium 223 on design attitude overlaps with the transverse axis of scan electrode 200; The printing parameter of every layer of dielectric is: scraper angle is 78 °, scraper speed is 2cm/s, and according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of every layer of dielectric is 10 μ m.The material of dielectric layer is NP-7858R, and main component is lead monoxide, is produced by Japanese NORITAKE company, can be effectively by the luminous lower plate upper plate that reflexes to, and enhance device luminosity, has good insulating properties too;
4) surface conduction electron emission film 250 in the first electrode 230 and the second electrode 231 palladium oxide material that sputter thickness is 40nm on close one end and gap thereof mutually with magnetron sputtering method; Magnetron sputtering parameter is: operating air pressure is 0.2Pa, and substrate temperature is 140 DEG C, and Ar throughput is 20sccm, O
2throughput is 20sccm, and sputtering power is 110W, and sputtering time is 60s.
Embodiment 4
1) be the electrode that 16nm, material are chromium with magnetron sputtering method some groups of thickness of sputter on substrate, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode 230 and the second horizontal electrode 231, and in every group of electrode, between the first electrode 230 and the second electrode 231, has the gap of 8 μ m; The process conditions of magnetron sputtering are: operating air pressure is 0.13Pa, and substrate temperature is 150 DEG C, and Ar throughput is 23sccm, and sputtering power is 150W, and sputtering time is 120s;
2) on electrod-array, printing several rows thickness by silk screen print method is that 15 μ m, material are the horizontal scan electrode 200 of silver, make the first electrode 230 of every row in electrod-array share a scan electrode 200, when printing, scan electrode 200 is printed on to the first electrode 230 one end away from the second electrode 231, the first electrode 230 is exposed near one end of the second electrode 231; The printing parameter of serigraphy scan electrode is: scraper angle is 78 °, scraper speed is 2.5cm/s, according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the scan electrode that each printing obtains is 15 μ m;
3) first on scan electrode 200, print several dielectric layers 220 by silk screen print method, then on electrod-array and dielectric layer 220, printing some row thickness by silk screen print method is 10 μ m, material is longitudinal addressing electrode 210 of silver, make cross section spaced apart and insulation by dielectric layer 220 of scan electrode 200 and addressing electrode 210, and make the second electrode 231 of every row in electrod-array share an addressing electrode 210, when printing, addressing electrode 210 is printed on to the second electrode 231 one end away from the first electrode 230, the second electrode 231 is exposed near one end of the first electrode 230, the printing parameter of serigraphy addressing electrode is: scraper angle is for being 76 °, scraper speed is 2cm/s, according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the addressing electrode that each printing obtains is 10 μ m,
Wherein in the time of the each dielectric layer 220 of printing, the top edge of the second electrode 231 of Yu Zhe unit, its one end extending longitudinally, both sides is tangent up and down respectively by scan electrode 200 places to make dielectric layer 220, the lower limb of the second electrode 231 of the other end and a upper unit is tangent, the thickness that is positioned at the part on scan electrode 200 in the dielectric layer 220 that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer 220 of extension is reduced gradually along bearing of trend; The thickness that is wherein positioned at the part on scan electrode 200 in dielectric layer 220 is 27 μ m, and the thickness of dielectric layer 220 is symmetrical along the transverse axis of scan electrode 200; Dielectric layer 220 comprises three-layer insulated medium, is respectively ground floor dielectric 221, second layer dielectric 222 and three-layer insulated medium 223; Referring to Fig. 4, when printing, by displacement silk screen, first ground floor dielectric 221 is printed on to the design attitude place moving down, then second layer dielectric 222 is printed on to the design attitude place moving, finally three-layer insulated medium 223 is printed on to design attitude place; The top edge that is wherein printed on the ground floor dielectric 221 on the design attitude moving down overlaps with the top edge of scan electrode 200, and the top edge of the second electrode 231 of lower limb and this unit is tangent; The lower limb that is printed on the second layer dielectric 222 on the design attitude moving overlaps with the lower limb of scan electrode 200, and the lower limb of the second electrode 231 of top edge and a upper unit is tangent; The transverse axis that is printed on the three-layer insulated medium 223 on design attitude overlaps with the transverse axis of scan electrode 200; The printing parameter of every layer of dielectric is: scraper angle is 76 °, scraper speed is 1.5cm/s, and according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of every layer of dielectric is 9 μ m.The material of dielectric layer is NP-7858R, and main component is lead monoxide, is produced by Japanese NORITAKE company, can be effectively by the luminous lower plate upper plate that reflexes to, and enhance device luminosity, has good insulating properties too;
4) surface conduction electron emission film 250 in the first electrode 230 and the second electrode 231 zinc oxide material that sputter thickness is 50nm on close one end and gap thereof mutually with magnetron sputtering method; Magnetron sputtering parameter is: operating air pressure is 0.2Pa, and substrate temperature is 145 DEG C, and Ar throughput is 25sccm, O
2throughput is 10sccm, and sputtering power is 140W, and sputtering time is 500s.
Embodiment 5
1) be that 18nm, material are the electrode of the composite of nickel and cobalt with magnetron sputtering method some groups of thickness of sputter on substrate, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode 230 and the second horizontal electrode 231, and in every group of electrode, between the first electrode 230 and the second electrode 231, has the gap of 20 μ m; The process conditions of magnetron sputtering are: operating air pressure is 0.13Pa, and substrate temperature is 160 DEG C, and Ar throughput is 21sccm, and sputtering power is 150W, and sputtering time is 120s;
2) on electrod-array, printing several rows thickness by silk screen print method is that 12 μ m, material are the horizontal scan electrode 200 of silver, make the first electrode 230 of every row in electrod-array share a scan electrode 200, when printing, scan electrode 200 is printed on to the first electrode 230 one end away from the second electrode 231, the first electrode 230 is exposed near one end of the second electrode 231; The printing parameter of serigraphy scan electrode is: scraper angle is 77 °, scraper speed is 2.2cm/s, according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the scan electrode that each printing obtains is 12 μ m;
3) first on scan electrode 200, print several dielectric layers 220 by silk screen print method, then on electrod-array and dielectric layer 220, printing some row thickness by silk screen print method is 15 μ m, material is longitudinal addressing electrode 210 of silver, make cross section spaced apart and insulation by dielectric layer 220 of scan electrode 200 and addressing electrode 210, and make the second electrode 231 of every row in electrod-array share an addressing electrode 210, when printing, addressing electrode 210 is printed on to the second electrode 231 one end away from the first electrode 230, the second electrode 231 is exposed near one end of the first electrode 230, the printing parameter of serigraphy addressing electrode is: scraper angle is for being 77 °, scraper speed is 2.2cm/s, according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the addressing electrode that each printing obtains is 15 μ m,
Wherein in the time of the each dielectric layer 220 of printing, make dielectric layer 220 by scan electrode 200 places respectively up and down its one end extending longitudinally, both sides be close to the top edge of the second electrode 231 of this unit, the other end is close to the lower limb of the second electrode 231 of a unit, the thickness that is positioned at the part on scan electrode 200 in the dielectric layer 220 that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer 220 of extension is reduced gradually along bearing of trend; The thickness that is wherein positioned at the part on scan electrode 200 in dielectric layer 220 is 24 μ m, and the thickness of dielectric layer 220 is symmetrical along the transverse axis of scan electrode 200; Dielectric layer 220 comprises two-layer dielectric, is respectively ground floor dielectric 221 and second layer dielectric 222; When printing, by displacement silk screen, first ground floor dielectric 221 is printed on to the design attitude place moving down, then second layer dielectric 222 is printed on to the design attitude place moving; The top edge that is wherein printed on the ground floor dielectric 221 on the design attitude moving down overlaps with the top edge of scan electrode 200, and lower limb is close to the top edge of the second electrode 231 of this unit; The lower limb that is printed on the second layer dielectric 222 on the design attitude moving overlaps with the lower limb of scan electrode 200, and top edge is close to the lower limb of the second electrode 231 of a unit; The printing parameter of every layer of dielectric is: scraper angle is 77 °, scraper speed is 1.7cm/s, and according to substrate thickness, adjusting substrate is 12.5mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of every layer of dielectric is 12 μ m.The material of dielectric layer is NP-7858R, and main component is lead monoxide, is produced by Japanese NORITAKE company, can be effectively by the luminous lower plate upper plate that reflexes to, and enhance device luminosity, has good insulating properties too;
4) surface conduction electron emission film 250 in the first electrode 230 and the second electrode 231 zinc oxide material that sputter thickness is 55nm on close one end and gap thereof mutually with magnetron sputtering method; Magnetron sputtering parameter is: operating air pressure is 0.2Pa, and substrate temperature is 150 DEG C, and Ar throughput is 25sccm, O
2throughput is 8sccm, and sputtering power is 150W, and sputtering time is 550s.
Embodiment 6
1) with magnetron sputtering method some groups of thickness of sputter on substrate be the electrode of 20nm, the material composite that is copper and mickel, form electrod-array, wherein every group of electrode comprises the first longitudinal electrode 230 and the second horizontal electrode 231, and in every group of electrode, between the first electrode 230 and the second electrode 231, has the gap of 15 μ m; The process conditions of magnetron sputtering are: operating air pressure is 0.13Pa, and substrate temperature is 150 DEG C, and Ar throughput is 24sccm, and sputtering power is 150W, and sputtering time is 60s;
2) on electrod-array, printing several rows thickness by silk screen print method is that 15 μ m, material are the horizontal scan electrode 200 of silver, make the first electrode 230 of every row in electrod-array share a scan electrode 200, when printing, scan electrode 200 is printed on to the first electrode 230 one end away from the second electrode 231, the first electrode 230 is exposed near one end of the second electrode 231; The printing parameter of serigraphy scan electrode is: scraper angle is 77 °, scraper speed is 2.3cm/s, according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the scan electrode that each printing obtains is 15 μ m;
3) first on scan electrode 200, print several dielectric layers 220 by silk screen print method, then on electrod-array and dielectric layer 220, printing some row thickness by silk screen print method is 12 μ m, material is longitudinal addressing electrode 210 of silver, make cross section spaced apart and insulation by dielectric layer 220 of scan electrode 200 and addressing electrode 210, and make the second electrode 231 of every row in electrod-array share an addressing electrode 210, when printing, addressing electrode 210 is printed on to the second electrode 231 one end away from the first electrode 230, the second electrode 231 is exposed near one end of the first electrode 230, the printing parameter of serigraphy addressing electrode is: scraper angle is for being 77 °, scraper speed is 2.1cm/s, according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of the addressing electrode that each printing obtains is 12 μ m,
Wherein in the time of the each dielectric layer 220 of printing, make dielectric layer 220 by scan electrode 200 places respectively up and down its one end extending longitudinally, both sides be close to the lower limb of the second electrode 231 of this unit, the other end is close to the top edge of the second electrode 231 of next unit, the thickness that is positioned at the part on scan electrode 200 in the dielectric layer 220 that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer 220 of extension is reduced gradually along bearing of trend; The thickness that is wherein positioned at the part on scan electrode 200 in dielectric layer 220 is 32 μ m, and the thickness of dielectric layer 220 is symmetrical along the transverse axis of scan electrode 200; Dielectric layer 220 comprises four layers of dielectric, is respectively ground floor dielectric 221, second layer dielectric 222, three-layer insulated medium 223 and the 4th layer of dielectric; When printing by the displacement panel of undertaking the printing of, first ground floor dielectric 221 is printed on to the design attitude place moving down, then second layer dielectric 222 is printed on to the design attitude place moving, again three-layer insulated medium 223 is printed on to the design attitude place moving down, finally the 4th layer of dielectric is printed on to the design attitude place moving; Wherein be printed on ground floor dielectric 221 on the design attitude moving down and the top edge of three-layer insulated medium and overlap with the top edge of scan electrode 200, lower limb is close to the top edge of the second electrode 231 of this unit; Be printed on second layer dielectric 222 on the design attitude moving and the lower limb of the 4th layer of dielectric and overlap with the lower limb of scan electrode 200, top edge is close to the lower limb of the second electrode 231 of a unit; The printing parameter of every layer of dielectric is: scraper angle is 77 °, scraper speed is 1.8cm/s, and according to substrate thickness, adjusting substrate is 15mm to the distance of scraper, thereby scraper can evenly be pressed on substrate in guarantee printing process, the thickness of every layer of dielectric is 8 μ m.The material of dielectric layer is NP-7858R, and main component is lead monoxide, is produced by Japanese NORITAKE company, can be effectively by the luminous lower plate upper plate that reflexes to, and enhance device luminosity, has good insulating properties too;
4) surface conduction electron emission film 250 in the first electrode 230 and the second electrode 231 palladium oxide material that sputter thickness is 35nm on close one end and gap thereof mutually with magnetron sputtering method; Magnetron sputtering parameter is: operating air pressure is 0.2Pa, and substrate temperature is 135 DEG C, and Ar throughput is 22sccm, O
2throughput is 25sccm, and sputtering power is 120W, and sputtering time is 50s.
In order to prove good result of the present invention, carry out contrast experiment as an example of the SED cathode base of preparing 64 × 64 interdigitated electrode design example, result shows, compared with traditional silk screen printing process, printing process provided by the invention is combined with displacement dielectric printing method and silk screen inclination printing process, make the quality of the SED cathode base of 64 × 64 interdigitated electrode design have obvious improvement, percent defective 80% was reduced to and is less than 30%, successful from being greater than of traditional silk screen printing process.Shown in Fig. 6 a for using the pictorial diagram of SED cathode base of 64 × 64 interdigitated electrode design prepared by traditional silk screen printing process under metallographic microscope, in figure, the larger circle in top has been indicated the distribution of dielectric layer, and the less circle in below represents the distribution of longitudinal addressing electrode (Ag electrode).From Fig. 6 a, the spread condition of the SED cathode base longitudinal electrode of prepared 64 × 64 interdigitated electrode design of tradition silk screen printing process is very serious, the longitudinal electrode width indicating in ringlet is almost 3 times of former design width, even larger, so longitudinal addressing electrode is very easy to be diffused into the first electrode part of horizontal scan electrode and makes crossed electrode short circuit.On the other hand, in order to control the diffusion of Ag slurry between medium, longitudinally the lead portion of addressing electrode is difficult to continuous printing, tends to the situation that occurs that electrode opens circuit, can only make electrode continuous being completed for printing the Ag slurry compensation of carrying out that descendant is.Fig. 6 b is depicted as the pictorial diagram of the SED cathode base of 64 × 64 interdigitated electrode design that under metallographic microscope, printing process provided by the invention is prepared, the two relatively can be found out, the dielectric layer coverage of preparing after improvement technique of the present invention obviously increases, between medium square structure, only has the second electrode part of longitudinal addressing electrode, greatly reduce the probability of electric pole short circuit, and the difficulty of continuous printing is reduced greatly.
Claims (10)
1. a method for printing screen for the SED cathode base of interdigitated electrode design, is characterized in that, comprises the following steps:
1) with magnetron sputtering method some groups of electrodes of sputter on substrate, form electrod-array, wherein every group of electrode comprises longitudinal the first electrode (230) and horizontal the second electrode (231), and in every group of electrode, between the first electrode (230) and the second electrode (231), has the gap of 8～20 μ m;
2) on electrod-array, print the horizontal scan electrode of several rows (200) by silk screen print method, make first electrode (230) of every row in electrod-array share a scan electrode (200), when printing, scan electrode (200) is printed on to the first electrode (230) one end away from the second electrode (231), the first electrode (230) is exposed near one end of the second electrode (231);
3) first use silk screen print method at scan electrode (200) several dielectric layers of upper printing (220), then use silk screen print method at electrod-array and the longitudinal addressing electrode (210) of dielectric layer (220) the some row of upper printing, make cross section spaced apart and insulation by dielectric layer (220) of scan electrode (200) and addressing electrode (210), and make second electrode (231) of every row in electrod-array share an addressing electrode (210), when printing, addressing electrode (210) is printed on to the second electrode (231) one end away from the first electrode (230), the second electrode (231) is exposed near one end of the first electrode (230),
Wherein, in the time of the each dielectric layer of printing (220), both sides are extending longitudinally up and down to make dielectric layer (220) locate difference by scan electrode (200), and the thickness of the dielectric layer (220) of extension is reduced gradually along bearing of trend;
4) with magnetron sputtering method sputtering surface conduction electron-emitter film (250) on the mutual close one end of the first electrode (230) and the second electrode (231) and gap thereof.
2. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 1, it is characterized in that: described dielectric layer (220) by scan electrode (200) locate respectively both sides up and down extend longitudinally to its one end near or be tangential on the top edge of second electrode (231) of this unit, the other end near or be tangential on the lower limb of second electrode (231) of a unit; Or one end near or be tangential on the lower limb of second electrode (231) of this unit, the other end near or be tangential on the top edge of second electrode (231) of next unit.
3. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 1 and 2, it is characterized in that: described dielectric layer (220) comprises at least two-layer dielectric, each layer of dielectric all adopts silk screen print method to be printed and make successively by the undertake the printing of position of panel or silk screen of displacement, the thickness that is positioned at the part on scan electrode (200) in the dielectric layer (220) that makes to obtain is greater than the thickness of extension, both sides, and the thickness of the dielectric layer (220) of extension is reduced gradually along bearing of trend; Wherein the printing parameter of each layer of dielectric of serigraphy is: scraper angle is 76～78 °, and scraper speed is 1.5～2cm/s, and the distance of substrate and scraper is 12.5～15mm.
4. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 3, it is characterized in that: described dielectric layer (220) comprises three-layer insulated medium, is respectively ground floor dielectric (221), second layer dielectric (222) and three-layer insulated medium (223); When printing, first ground floor dielectric (221) is printed on the design attitude that moves down, on any place in the design attitude and the design attitude that move, then second layer dielectric (222) is printed on to any place in residue two positions, place, finally three-layer insulated medium (223) is printed on final remaining position; The transverse axis that is wherein printed on the dielectric on design attitude overlaps with the transverse axis of scan electrode (200); The top edge that is printed on the dielectric on the design attitude moving down overlaps with the top edge of scan electrode (200); The lower limb that is printed on the dielectric on the design attitude moving overlaps with the lower limb of scan electrode (200).
5. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 3, it is characterized in that: in described dielectric layer (220), the thickness of every layer of dielectric is 8～12 μ m, the thickness that is positioned at the part on scan electrode (200) in dielectric layer (220) is 24～32 μ m.
6. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 3, it is characterized in that: the material that forms dielectric layer (220) is the NP-7858R type insulating materials that Japanese NORITAKE company produces, and its main component is lead monoxide.
7. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 3, it is characterized in that: the material that forms the first electrode (230) and the second electrode (231) comprises platinum, copper, nickel, chromium and composite thereof, and its thickness is 10～20nm;
Described scan electrode (200) and the thickness of addressing electrode (210) are 10～15 μ m, and forming scan electrode (200) and addressing electrode (210) is silver;
The thickness of described surface conduction electron emission film (250) is 30nm～60nm, and the material that forms surface conduction electron emission film (250) comprises zinc oxide or palladium oxide.
8. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 7, it is characterized in that: in described step 1), the design parameter of magnetron sputtering is: operating air pressure is 0.13Pa, substrate temperature is 150～220 DEG C, Ar throughput is 20～25sccm, sputtering power is 150W, and sputtering time is 60～240s.
9. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 7, it is characterized in that: the design parameter of silk screen print method printing scan electrode and addressing electrode is: scraper angle is 76～78 °, scraper speed is 2～2.5cm/s, and the distance of substrate and scraper is 12.5～15mm.
10. the method for printing screen of the SED cathode base of interdigitated electrode design according to claim 7, it is characterized in that: in described step 4), the design parameter of magnetron sputtering is: operating air pressure is 0.2Pa, substrate temperature is 135～150 DEG C, Ar throughput is 20～25sccm, O2 throughput is 5～30sccm, sputtering power is 100～150W, and sputtering time is 40～600s.
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