CN103928355A - Large-power semiconductor module mixing packaging structure and method thereof - Google Patents
Large-power semiconductor module mixing packaging structure and method thereof Download PDFInfo
- Publication number
- CN103928355A CN103928355A CN201310010816.8A CN201310010816A CN103928355A CN 103928355 A CN103928355 A CN 103928355A CN 201310010816 A CN201310010816 A CN 201310010816A CN 103928355 A CN103928355 A CN 103928355A
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- CN
- China
- Prior art keywords
- semiconductor module
- power
- power semiconductor
- package
- level hermetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 5
- 238000004806 packaging method and process Methods 0.000 title abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 10
- 239000011347 resin Substances 0.000 claims abstract description 10
- 239000004033 plastic Substances 0.000 claims description 17
- 229920003023 plastic Polymers 0.000 claims description 17
- 239000000919 ceramic Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 238000005452 bending Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 239000003344 environmental pollutant Substances 0.000 abstract description 3
- 231100000719 pollutant Toxicity 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
- H01L2021/60007—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation involving a soldering or an alloying process
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to the field of electric power (power) and electronics, more specifically, relates to a semiconductor packaging technology, and provides a large-power semiconductor module mixing packaging structure. In the large-power semiconductor module mixing packaging structure, a semiconductor element is packaged by use of a combination mode of hermetic packaging and resin embedding, a semiconductor chip is first of all packaged to a small hermetic element by use of a hermetic packaging structure, and then a large semiconductor module is composed of the small hermetic packaging element. The advantages are as follows: through hermetic packaging of the semiconductor chip, it can be ensured that a wafer is prevented from damage of external factors such as humidity, pollutants and the like. A hermetic package is externally provided with a quite-low-cost resin package so that the cost can be reduced under the condition that an application requirement is ensured. The invention further provides a large-power semiconductor module mixing packaging method.
Description
Technical field
The present invention relates to electric power (power) person in electronics, and relate more specifically to semi-conductive encapsulation technology.
Background technology
Power semiconductor modular or claim that electric power electronic module is for example, for example, for being operated in the circuit design of relatively high voltage (, being greater than 100 volts) or relatively high electric current (, being greater than 10 peaces).Power semiconductor modular at least comprises power semiconductor wafer, for carrying out switching, adjusting or the rectification of electric current.The kind of power semiconductor modular at least comprises silicon controlled rectifier (SCR), power governor, power transistor, insulated gate bipolar transistor (IGBT), MOS (metal-oxide-semiconductor) memory (MOSFET), power rectifier, fast recovery diode, Schottky diode or any other power semiconductor.Power semiconductor modular, particularly has the high-power single-phase half-bridge fast recovery diode semiconductor module of double pipe structure, is used in many power electronic circuits, especially in the circuit such as inversion welding machine, electroplating power supply and frequency converter.Such power semiconductor modular comprises the housing of for example being manufactured by plastics.Described plastics are comprised of the compound such as castings of can hardening such as epoxy resins, and this means that heat cured plastics are selected for this object.Power semiconductor modular generally also comprises substrate, and wherein high power semi-conductor wafer above-mentioned is placed on the surface that described substrate matches with described housing.Described high power semi-conductor wafer and be placed on described substrate and the described housing link of unifying side surface that matches is encapsulated in the housing of described epoxy resin.Wherein said high power semi-conductor wafer is connected with the high-power semiconductor module pin or the terminal that expose by described link, and described pin or terminal can be connected with applications circuit.
Semiconductor device has a lot of encapsulation patterns, and more and more advanced to wafer-class encapsulation technical indicator again from wafer-level package to system in package, encapsulation says necessary for chip, is also vital.Encapsulation is the shell that semiconductor integrated circuit chip is installed, not only playing a part protection chip and increased thermal conductivity can, but also be to link up the chip internal world and the bridge of external circuit and the effect of specification general utility functions, the Main Function of encapsulation has: 1) physical protection, protection chip is avoided the impact of damage and external environment condition at aspects such as electric or hot physics, alleviate the stress that thermal change causes simultaneously; 2) electrical connection, the adjusted size function of encapsulation can be adjusted to the size-spacing of installation base plate by the superfine lead spacing of chip, be convenient to practical operation; 3) standard gauge is formatted, and the size of encapsulation, shape, pin number, spacing, length etc. have standard specification, strengthens equipment interoperability.
Encapsulation is divided into metallic packaging, ceramic packaging, Plastic Package etc. according to encapsulating material difference, according to air-tightness, is divided into air-tight packaging and resin-encapsulated two classes, and every kind of encapsulation has the place of its uniqueness, i.e. its advantages and disadvantages part.Wherein air-tight packaging reliability is higher, but price is also high.Simple resin-encapsulated environment isolation performance is low compared with air-tight packaging.
Summary of the invention
In view of above-mentioned defect of the prior art, the object of the present invention is to provide a kind of high-power semiconductor module hybrid package structure, the mode that adopts level Hermetic Package and resin embedding to combine encapsulates semiconductor element, first semiconductor element is become to little airtight element by level Hermetic Package construction packages, by little level Hermetic Package element, form large semiconductor module again, thereby by semiconductor element is carried out to level Hermetic Package, can guarantee that wafer avoids external factor as humidity, the infringement of pollutant etc., and adopt the resin-encapsulated that cost is relatively cheap under the prerequisite that guarantees instructions for use, to reduce costs outward in level Hermetic Package.
Above-mentioned purpose of the present invention is achieved through the following technical solutions.
A kind of high-power semiconductor module hybrid package structure comprises conductive sole plate, ceramic substrate, level Hermetic Package element, controls pin, power pin, shell.Wherein ceramic substrate and conductive sole plate are welded as a whole, and control pin, power pin, level Hermetic Package element and are welded on and on ceramic substrate, form semiconductor module.Shell is bonded in conductive sole plate.The inner embedding of semiconductor module has resin.
Preferably, whole semiconductor module hybrid package structure welds together with the scolding tin of solder plate and control pin and power tube foot bottom.
Preferably, power tube was worn shell bending and housing contacts, thereby was connected and fixed with external circuit.
Preferably, the mode that control pin welds by scolding tin is connected with external circuit.
Preferably, described shell is by electrical insulating material, and especially plastics are made.
Preferably, described plastic casing is bonded in conductive sole plate by gel.
A kind of high power semi-conductor hybrid package method, comprise step: the mode that adopts level Hermetic Package and resin embedding to combine encapsulates semiconductor element, first semiconductor element is used level Hermetic Package to encapsulate and forms little level Hermetic Package element, and level Hermetic Package element adopts resin-encapsulated pattern to carry out overall package afterwards.Exclusive dual packaged structure, reduces packaging cost when guaranteeing semiconductor package packing quality.
Hybrid package structure of the present invention is that the mode that adopts level Hermetic Package and resin embedding to combine encapsulates semiconductor element, first semiconductor element is become to little airtight element by level Hermetic Package construction packages, then form large semiconductor module by little level Hermetic Package element.Advantage is by semiconductor element is carried out to level Hermetic Package, can guarantee that wafer avoids external factor as the infringement of humidity, pollutant etc.And adopt the resin-encapsulated that cost is relatively cheap under the prerequisite that guarantees instructions for use, to reduce costs outward in level Hermetic Package.Guaranteeing that semiconductor packages reliability reduces costs in high, is convenient to promote the use of.
Accompanying drawing explanation
Fig. 1 is the outline drawing of high-power semiconductor module hybrid package.
Fig. 2 is the cut-away view of high-power semiconductor module hybrid package.
Fig. 3 is the ceramic substrate structure figure of high-power semiconductor module hybrid package.
Fig. 4 is the airtight component structure figure of high-power semiconductor module hybrid package.
Fig. 5 is the plastic shell structure figure of high-power semiconductor module hybrid package.
Shown in figure, mark is as follows: 1, conductive sole plate; 2, solder plate a; 3, ceramic substrate; 4, solder plate b; 5, control pin; 6, plastic casing; 7, nut; 8, semiconductor element; 9, solder plate c; 10, power pin; 3-1, ceramic matrix; 3-2, bottom surface metal film; 6-1, plastic casing matrix; 6-2, through hole a; 6-3, nut standing groove; 6-4, through hole b; 6-5, through hole c.
Embodiment
Below in conjunction with accompanying drawing and instantiation, the present invention is described in detail.
Referring to each accompanying drawing, similar identical or corresponding parts of numeral in accompanying drawing, it should be noted that, the present invention that has been exemplary illustration of the component count in each accompanying drawing and shape thereof, is not intended to limit protection scope of the present invention.
Fig. 1 is the packaged later outline drawing of high-power semiconductor module, and power pin 10 is connected with external circuit with power pin 10 nut below by male screw thread.The mode that control pin 5 welds by scolding tin is connected with external circuit.High-power semiconductor module itself is fixed on external heat sink by the hole in conductive sole plate 1 with male screw thread.
Fig. 2 forms theme high-power semiconductor module hybrid package cut-away view of the present invention.High-power semiconductor module hybrid package inside configuration connects in turn according to conductive sole plate 1, solder plate a2, ceramic substrate 3, solder plate b4, solder plate c9, level Hermetic Package element 8, control pin 5, power pin 10, plastic casing 6, nut 7.Control pin 5 and power pin 10 bottoms and be all soaked with a certain amount of scolding tin, for the welding with associated components.Wherein, the matrix that conductive sole plate 1 is module package, whole solder plate a2, solder plate b4 for hybrid package structure, solder plate c9 and the scolding tin of controlling pin 5 and power pin 10 bottoms weld together.
As shown in Figure 3,3-1 is ceramic matrix; 3-2 be bottom surface metal film for conductive sole plate 1 welding, thereby ceramic substrate 3 is welded as a whole by scolding tin with conductive sole plate 1.Control pin 5, power pin 10, level Hermetic Package element 8 use scolding tin are welded on ceramic substrate 3, and the quantity of semiconductor element 8, control pin 5 and power pin 10 can change according to actual needs.By plastic casing 6 use gel cementings in conductive sole plate 1, with resin by inside modules embedding.Power pin 10 is passed to plastic casing 6 to nut 7 directions bendings and contacts with plastic casing 6, and wherein, nut 7 is for to be connected and fixed use with external circuit, and plastic casing 6 is for the protection of inside modules structure, placing nut 7.
Fig. 5 is plastic shell structure figure, and 6-1 is plastic casing matrix; 6-2 is through hole a, controls pin 5 and therefrom passes; 6-3 is nut standing groove, for placing nut 7; 6-4 is through hole b, for filling resin; 6-5 is through hole c, and power pin 10 therefrom passes, and the quantity of through hole 6-2 and 6-5 and shape can change according to pin situation.
Claims (7)
1. a high-power semiconductor module hybrid package structure, it is characterized in that: comprise conductive sole plate, ceramic substrate, level Hermetic Package element, control pin, power pin, shell, wherein ceramic substrate and conductive sole plate are welded as a whole, and control pin, power pin, level Hermetic Package element and are welded on and on ceramic substrate, form semiconductor module; Shell is bonded in conductive sole plate; The inner embedding resin of semiconductor module.
2. a kind of high-power semiconductor module hybrid package structure according to claim 1, is characterized in that: whole semiconductor module hybrid package structure welds together with the scolding tin of solder plate and control pin and power tube foot bottom.
3. a kind of high-power semiconductor module hybrid package structure according to claim 1, is characterized in that: power tube was worn shell bending and housing contacts, thereby was connected and fixed with external circuit.
4. a kind of high-power semiconductor module hybrid package structure according to claim 1, is characterized in that: the mode that control pin welds by scolding tin is connected with external circuit.
5. a kind of high-power semiconductor module hybrid package structure according to claim 1, is characterized in that: described shell is made by electrical insulating material.
6. a kind of high-power semiconductor module hybrid package structure according to claim 5, is characterized in that: described plastic casing is bonded in conductive sole plate by gel.
7. a high power semi-conductor hybrid package method, it is characterized in that: the mode that adopts level Hermetic Package and resin embedding to combine encapsulates semiconductor element, first semiconductor element is used level Hermetic Package to encapsulate and forms little level Hermetic Package element, and level Hermetic Package element adopts resin-encapsulated pattern to carry out overall package afterwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310010816.8A CN103928355A (en) | 2013-01-14 | 2013-01-14 | Large-power semiconductor module mixing packaging structure and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310010816.8A CN103928355A (en) | 2013-01-14 | 2013-01-14 | Large-power semiconductor module mixing packaging structure and method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103928355A true CN103928355A (en) | 2014-07-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310010816.8A Pending CN103928355A (en) | 2013-01-14 | 2013-01-14 | Large-power semiconductor module mixing packaging structure and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103928355A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116798882A (en) * | 2023-08-22 | 2023-09-22 | 哈尔滨工业大学（威海） | Manufacturing method of power module with double-sided heat dissipation structure |
-
2013
- 2013-01-14 CN CN201310010816.8A patent/CN103928355A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116798882A (en) * | 2023-08-22 | 2023-09-22 | 哈尔滨工业大学（威海） | Manufacturing method of power module with double-sided heat dissipation structure |
| CN116798882B (en) * | 2023-08-22 | 2024-01-30 | 哈尔滨工业大学（威海） | Manufacturing method of power module with double-sided heat dissipation structure |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140716 |