CN103913498B - Carrying current wide oxygen sensor chip and preparation method thereof - Google Patents
Carrying current wide oxygen sensor chip and preparation method thereof Download PDFInfo
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- CN103913498B CN103913498B CN201410154522.7A CN201410154522A CN103913498B CN 103913498 B CN103913498 B CN 103913498B CN 201410154522 A CN201410154522 A CN 201410154522A CN 103913498 B CN103913498 B CN 103913498B
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Abstract
The present invention relates to lambda sensor integrated chip technical field, broad domain oxygen sensor chip that especially a kind of operation principle is limit-current type and preparation method thereof. This oxygen sensor chip only builds required pump battery unit, hybrid chamber, diffusion barrier layer, reference air duct and heating line with three layers of main substrate, wherein hybrid chamber and reference air duct are on same base layer, and reference air duct adopts bendable design, can significantly reduce passage length, guaranteeing on the basis of certain reference oxygen diffusion ability, can dwindle the sectional area of passage, contribute to dwindle the volume of chip and increase Die strength. Carrying current wide oxygen sensor chip preparation section provided by the invention is simple, production efficiency is high, good stability.
Description
Technical field
Originally the present invention relates to oxygen sensor used in vehicle integrated chip technical field, especially a kind of carrying current wide oxygen sensor chip and preparation method thereof.
Background technology
Along with the raising day by day of motor vehicle exhaust emission regulation and engine control technology, traditional potentiometric oxygen sensor all cannot meet the requirement of engine control system in certainty of measurement and measurement category, and therefore the broad domain oxygen sensor based on carrying current principle arises at the historic moment. Current existing carrying current wide oxygen sensor chip has two kinds, a kind of is the monocell broad domain oxygen sensor chip that only has pump battery unit, as shown in Fig. 1 (a), 1 (b), another kind is the double cell broad domain oxygen sensor chip with pump battery unit and concentration cell unit, as shown in Fig. 1 (c), 1 (d). These two kinds of chips are all that required hybrid chamber and reference air duct are set respectively on different base layers, and this just needs at least 5 laminar substrates stacks just can complete, and its theoretic thickness is 1.7 times of common potentiometric oxygen sensor chip thickness, and volume is bigger than normal. Although so existing carrying current wide oxygen sensor chip improves much in certainty of measurement, do not have common potentiometric oxygen sensor chip fast aspect firing rate, the cold start-up time is long.
In addition, the reference air duct of existing these two kinds of broad domain oxygen sensor chips is all that linear pattern is arranged in same base layer and penetrates into the tail end of chip, its passage length is almost suitable with chip length, this just causes obtaining enough reference oxygen diffusion abilities, must strengthen the cross-sectional area of reference air duct, particularly, for the monocell broad domain oxygen sensor that only has pump battery unit, the oxygen diffusion ability of reference air duct has just determined its detectability in air-fuel ratio < 1 scope. The increase of reference air duct cross-sectional area can increase manufacturing process difficulty, and reduces the bending strength of chip.
In addition, the certainty of measurement of limit-current type oxygen sensor and stability depend on the stability of the atmosphere diffusion velocity of diffusion barrier layer substantially, existing broad domain oxygen sensor chip is because of structure limitation, diffusion barrier layer can only be arranged in the middle of induction substrate above, away from a side of heating region, this make in diffusion barrier layer real work temperature lower, affected greatly by tail gas gas flow temperature, and be unfavorable for the decomposition of unburnt in tail gas, and affect the diffusion rate of tail gas in this barrier layer, cause certainty of measurement deviation.
Summary of the invention
In order to overcome the deficiency of existing broad domain oxygen sensor, the invention provides a kind of carrying current wide oxygen sensor chip and preparation method thereof.
The technical solution adopted for the present invention to solve the technical problems is: a kind of carrying current wide oxygen sensor chip, and chip is responded to the closed substrate stack of substrate, middle level skeleton substrate and bottom by upper strata and has been formed mutual isolated hybrid chamber and reference air duct; Substrate is responded to by hybrid chamber corresponding region, tail gas lateral electrode being set in upper strata, and in reference air duct corresponding region, reference air side electrode is set, and jointly forms pump battery unit, and two electrodes of pump battery unit are all in heating region; Reference air duct is responded to the through hole arranging on substrate and is communicated with outside air by upper strata; Diffusion barrier layer is arranged on below hybrid chamber, from heating region distance very close to, and to tail gas to the certain restriction that diffuses to form in hybrid chamber; Heating line is directly integrated on the bottom surface of the closed substrate of lower floor.
According to another embodiment of the invention, further comprise that described hybrid chamber and reference air duct construct on same casing play.
According to another embodiment of the invention, further comprise the tail gas lateral electrode of pump battery unit and the setting of reference air side electrode at grade, and corresponding to the position of hybrid chamber and reference air duct respectively, isolation mutually, and be all in heating region.
According to another embodiment of the invention, further comprise that reference air duct adopts bendable design, communicate with outside air by open hole realization on upper strata induction substrate.
According to another embodiment of the invention, further comprise that described lead to the hole site avoids the seal area of chip middle part assembling.
According to another embodiment of the invention, further comprise that described through hole is arranged on the closed substrate of bottom, or upper and lower base plate all arranges.
According to another embodiment of the invention, further comprise that described upper strata induction substrate is zirconia solid electrolyte.
According to another embodiment of the invention, further comprise that described diffusion barrier layer is arranged on below hybrid chamber, the one side of more close heating line.
According to another embodiment of the invention, the superficies that are further included in upper strata induction substrate arrange catalytic reaction electrode, form the double cell broad domain oxygen sensor chip with carrying current pump battery unit and concentration cell unit.
According to another embodiment of the invention, further comprise the catalytic reaction electrode in hybrid chamber, form concentration cell unit as measurement electrode and reference air electrode on the one hand, also form pump battery unit as electrode in pump battery and outside catalytic reaction electrode on the other hand.
A preparation method for carrying current wide oxygen sensor chip, its step is,
One, first, same the Zirconium oxide powder of 5% mole of yittrium oxide PVB, terpinol and dibutyl phthalate (DBP) are made to slurry with the quality of 70～86:6～12:4～9:4～9 than mixing and ball milling, then make zirconia green compact band by casting technique, become the upper strata induction substrate base substrate with 1 air hole and 2 electrode connecting holes, the middle level skeleton substrate base substrate with diffusion chamber square hole and reference air duct square groove by mould punching again, and the closed substrate base substrate of smooth bottom;
Two, the inner surface that the electrode that contains 70%～90% platinum powder and electrocondution slurry is printed on to upper strata induction substrate base substrate, forms the printed patterns of tail gas lateral electrode, reference air side electrode and the associated lead of isolation mutually; The tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again;
Three, prepare Woelm Alumina or zirconia slurry, be printed on the closed substrate base substrate upper surface of bottom and hybrid chamber corresponding position with silk-screen printing technique, 50～200 microns of print thickness, to form diffusion barrier layer;
Four, the lower surface that the insulation paste that contains purity and reach more than 97% alumina powder is printed on to the closed substrate base substrate of bottom forms insulating barrier, again the electrocondution slurry that contains platinum powder is printed on this insulating barrier, to form heating line pattern, finally republish one deck alumina insulating layer heating line is covered, and expose the heating line brace of tail end;
Five, next, use the adhesive that contains zirconia powder that substrate base substrate, middle level skeleton substrate base substrate are responded to in upper strata, and the closed substrate exactitude position of bottom is stacked together, is heated to 40～60 degree and presses closely simultaneously;
Six, by the degreasing at low temperatures of lamination all-in-one-piece green compact, then spend high temperature sintering 1～3 hour 1300～1500, can prepare this carrying current wide oxygen sensor chip.
According to another embodiment of the invention, further comprise the preparation method of carrying current wide oxygen sensor chip, second step comprises the following steps: the electrode that contains 70%～90% platinum powder and electrocondution slurry are printed on to the inner surface of upper strata induction substrate base substrate, form the printed patterns of measurement electrode (with electrode in pump battery), reference air side electrode and the associated lead of isolation mutually; Same platinum electrode and electrocondution slurry are printed on to the outer surface of upper strata induction substrate base substrate, form the printed patterns of pump battery external electrode and associated lead; The tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again.
The invention has the beneficial effects as follows, carrying current wide oxygen sensor chip provided by the invention only builds with three layers of main substrate, and thickness is thinner, and volume is less; And this chip employing bendable reference air duct, significantly shorten passage length, reduce cross-sectional area, improve chip bending strength and also reduce manufacture difficulty; Finally the diffusion barrier layer of this oxygen sensor chip has higher more stable operating temperature in actual use, is conducive to improve certainty of measurement and the stability of chip.
Brief description of the drawings
Below in conjunction with drawings and Examples, the present invention is further described.
Fig. 1 (a) is the profile of existing monocell broad domain oxygen sensor chip;
Fig. 1 (b) is that the middle A-A of Fig. 1 (a) is to cutaway view;
Fig. 1 (c) is the profile of existing double cell broad domain oxygen sensor chip;
Fig. 1 (d) is that the middle B-B of Fig. 1 (c) is to cutaway view;
101. induction substrates in figure, 102A. hybrid chamber skeleton substrate, the closed substrate of 102B. hybrid chamber, 103A. reference air duct skeleton substrate, 103B. reference air duct substrate, 111. tail gas lateral electrodes (in Fig. 1 (c) as electrode in measurement electrode and pump battery), 112. reference air side electrodes, 113. pump battery external electrodes, 121. hybrid chamber, 122. reference air ducts, 123. diffusion barrier layers, 131. heating lines.
The profile of Fig. 2 (a) monocell broad domain oxygen sensor of the present invention chip;
Fig. 2 (b) is that the middle C-C of Fig. 2 (a) is to cutaway view;
Fig. 2 (c) is the profile of another embodiment of the present invention double cell broad domain oxygen sensor chip;
Fig. 2 (d) is that the middle D-D of Fig. 2 (c) is to cutaway view;
Fig. 3 is the exploded view of broad domain oxygen sensor chip of the present invention;
1. upper strata induction substrates in figure, 2. middle level skeleton substrate, 3. the closed substrate of bottom, 11. tail gas lateral electrodes (in Fig. 2 (c) as electrode in measurement electrode and pump battery), 12. reference air side electrodes, 13. pump battery external electrodes, 21. hybrid chambers, 22. reference air ducts, 221. air hole, 23. diffusion barrier layers, 31. heating lines.
Detailed description of the invention
As Fig. 2 (a), 2(b) be the structural representation of monocell carrying current wide oxygen sensor chip of the present invention, this chip has formed mutual isolated hybrid chamber 21 and reference air duct 22 by closed substrate 3 stacks of upper strata induction substrate 1, middle level skeleton substrate 2 and bottom; Substrate 1 is responded to by hybrid chamber 21 corresponding regions, tail gas lateral electrode 11 being set in upper strata, and in reference air duct 22 corresponding regions, reference air side electrode 12 is set, and jointly forms pump battery unit, and two electrodes of pump battery unit are all in heating region; Reference air duct 22 is responded to by upper strata the through hole 221 arranging on substrate 1 and is communicated with outside air; Diffusion barrier layer 23 is arranged on below hybrid chamber 21, and to tail gas to the certain restriction that diffuses to form in hybrid chamber 21; Heating line 31 is directly integrated on the bottom surface of the closed substrate 3 of lower floor.
Comprise the following steps:
One, same the Zirconium oxide powder of 5% mole of yittrium oxide PVB, terpinol and dibutyl phthalate (DBP) are made to slurry with the quality of 70～86:6～12:4～9:4～9 than mixing and ball milling, then make zirconia green compact band by casting technique, become upper strata induction substrate 1 base substrate with 1 air hole and 2 electrode connecting holes, middle level skeleton substrate 2 base substrates with diffusion chamber 21 square holes and reference air duct 22 square grooves by mould punching again, and closed substrate 3 base substrates of smooth bottom.
Two, the inner surface that the electrode that contains 70% ~ 90% platinum powder and electrocondution slurry is printed on to upper strata induction substrate 1 base substrate, forms the printed patterns of tail gas lateral electrode 11, reference air side electrode 12 and the associated lead of isolation mutually. The tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate 1 base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again.
Three, prepare Woelm Alumina or zirconia slurry, be printed on closed substrate (3) the base substrate upper surface of bottom and hybrid chamber corresponding position with silk-screen printing technique, 50 ~ 200 microns of print thickness, to form diffusion barrier layer (23).
Four, the lower surface that the insulation paste that contains purity and reach more than 97% alumina powder is printed on to closed substrate 3 base substrates of bottom forms insulating barrier, again the electrocondution slurry that contains platinum powder is printed on this insulating barrier, to form heating line 31 patterns, finally republish one deck alumina insulating layer heating line is covered, and expose the heating line brace of tail end.
Five, with the adhesive that contains zirconia powder, substrate 1 base substrate, middle level skeleton substrate 2 base substrates are responded to in upper strata, and closed substrate 3 exactitude positions of bottom are stacked together, are heated to 40～60 degree and press closely simultaneously.
Finally, by the degreasing at low temperatures of lamination all-in-one-piece green compact, then spend high temperature sintering 1～3 hour 1300 ~ 1500, can prepare the monocell carrying current wide oxygen sensor chip of this patent.
As Fig. 2 (b), 2(c) be the structural representation of monocell carrying current wide oxygen sensor chip of the present invention, superficies at upper strata induction substrate 1 arrange catalytic reaction electrode 13, this electrode forms carrying current pump battery unit with the catalytic reaction electrode 11 in corresponding hybrid chamber 21, and catalytic reaction electrode in hybrid chamber 11 is simultaneously as measurement electrode, formed concentration cell unit with the electrode 12 of reference air side again, this has just formed double cell carrying current wide oxygen sensor chip.
Describe the manufacturing process of monocell carrying current wide oxygen sensor chip of the present invention in detail below in conjunction with exploded view 3.
First, same the Zirconium oxide powder of 5% mole of yittrium oxide PVB, terpinol and dibutyl phthalate (DBP) are made to slurry with the quality of 70～86:6～12:4～9:4～9 than mixing and ball milling, then make zirconia green compact band by casting technique, become upper strata induction substrate 1 base substrate with 1 air hole and 2 electrode connecting holes, middle level skeleton substrate 2 base substrates with diffusion chamber 21 square holes and reference air duct 22 square grooves by mould punching again, and closed substrate 3 base substrates of smooth bottom.
Secondly, the electrode that contains 70% ~ 90% platinum powder and electrocondution slurry are printed on to the inner surface of upper strata induction substrate 1 base substrate, form the printed patterns of tail gas lateral electrode 11, reference air side electrode 12 and the associated lead of isolation mutually. The tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate 1 base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again.
Again, prepare Woelm Alumina or zirconia slurry, be printed on the closed substrate 3 base substrate upper surfaces of bottom and hybrid chamber corresponding position with silk-screen printing technique, 50 ~ 200 microns of print thickness, to form diffusion barrier layer 23.
Next, the lower surface that the insulation paste that contains purity and reach more than 97% alumina powder is printed on to closed substrate 3 base substrates of bottom forms insulating barrier, again the electrocondution slurry that contains platinum powder is printed on this insulating barrier, to form heating line 31 patterns, finally republish one deck alumina insulating layer heating line is covered, and expose the heating line brace of tail end.
And then substrate 1 base substrate, middle level skeleton substrate 2 base substrates are responded to in upper strata with the adhesive that contains zirconia powder, and closed substrate 3 exactitude positions of bottom are stacked together, are heated to 40～60 degree and press closely simultaneously.
Finally, by the degreasing at low temperatures of lamination all-in-one-piece green compact, then spend high temperature sintering 1～3 hour 1300～1500, can prepare the monocell carrying current wide oxygen sensor chip of this patent.
The embodiment of double cell carrying current wide oxygen sensor chip of the present invention is as follows:
First, same the Zirconium oxide powder of 5% mole of yittrium oxide PVB, terpinol and dibutyl phthalate (DBP) are made to slurry with the quality of 70～86:6～12:4～9:4～9 than mixing and ball milling, then make zirconia green compact band by casting technique, become upper strata induction substrate 1 base substrate with 1 air hole and 2 electrode connecting holes, middle level skeleton substrate 2 base substrates with diffusion chamber 21 square holes and reference air duct 22 square grooves by mould punching again, and closed substrate 3 base substrates of smooth bottom.
Secondly, the electrode that contains 70% ~ 90% platinum powder and electrocondution slurry are printed on to the inner surface of upper strata induction substrate base substrate, form the printed patterns of measurement electrode (with electrode in pump battery), reference air side electrode and the associated lead of isolation mutually; Same platinum electrode and electrocondution slurry are printed on to the outer surface of upper strata induction substrate base substrate, form the printed patterns of pump battery external electrode and associated lead; The tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again.
Again, prepare Woelm Alumina or zirconia slurry, be printed on the closed substrate 3 base substrate upper surfaces of bottom and hybrid chamber corresponding position with silk-screen printing technique, 50～200 microns of print thickness, to form diffusion barrier layer 23.
Next, the lower surface that the insulation paste that contains purity and reach more than 97% alumina powder is printed on to closed substrate 3 base substrates of bottom forms insulating barrier, again the electrocondution slurry that contains platinum powder is printed on this insulating barrier, to form heating line 31 patterns, finally republish one deck alumina insulating layer heating line is covered, and expose the heating line brace of tail end.
And then substrate 1 base substrate, middle level skeleton substrate 2 base substrates are responded to in upper strata with the adhesive that contains zirconia powder, and closed substrate 3 exactitude positions of bottom are stacked together, are heated to 40～60 degree and press closely simultaneously.
Finally, by the degreasing at low temperatures of lamination all-in-one-piece green compact, then spend high temperature sintering 1～3 hour 1300～1500, can prepare the monocell carrying current wide oxygen sensor chip of this patent.
Carrying current wide oxygen sensor chip provided by the invention only builds with three layers of main substrate, and thickness is thinner, and volume is less. And this chip employing bendable reference air duct, significantly shorten passage length, reduce cross-sectional area, improve chip bending strength and also reduce manufacture difficulty. Finally the diffusion barrier layer of this oxygen sensor chip has higher more stable operating temperature in actual use, is conducive to improve certainty of measurement and the stability of chip.
Claims (11)
1. a carrying current wide oxygen sensor chip, it is characterized in that, chip is responded to the closed substrate of substrate (1), middle level skeleton substrate (2) and bottom (3) stack by upper strata and has been formed mutual isolated hybrid chamber (21) and reference air duct (22); Upper strata induction substrate (1) is by arranging tail gas lateral electrode (11) in hybrid chamber (21) corresponding region, and in reference air duct (22) corresponding region, reference air side electrode (12) is set, common formation pump battery unit, two electrodes of pump battery unit are all in heating region; Reference air duct (22) is responded to the upper through hole (221) arranging of substrate (1) by upper strata and is communicated with outside air; Diffusion barrier layer (23) is arranged on below hybrid chamber (21), near heating region, and to tail gas to the certain restriction that diffuses to form in hybrid chamber (21); Heating line (31) is directly integrated on the bottom surface of the closed substrate of lower floor (3).
2. carrying current wide oxygen sensor chip according to claim 1, is characterized in that, described hybrid chamber (21) and reference air duct (22) are constructed on same casing play.
3. carrying current wide oxygen sensor chip according to claim 1, it is characterized in that, tail gas lateral electrode (11) and the reference air side electrode (12) of pump battery unit arrange at grade, and the corresponding position at hybrid chamber (21) and reference air duct (22) respectively, isolation mutually, and be all in heating region.
4. carrying current wide oxygen sensor chip according to claim 1, it is characterized in that, reference air duct (22) adopts bendable design, communicates with outside air by open hole (221) realization on upper strata induction substrate (1).
5. carrying current wide oxygen sensor chip according to claim 1, is characterized in that, the seal area of chip middle part assembling is avoided in described through hole (221) position.
6. carrying current wide oxygen sensor chip according to claim 1, it is characterized in that, described upper strata induction substrate (1) is zirconia solid electrolyte, the closed substrate of middle level skeleton substrate (2) and bottom (3) can adopt same material to make matrix, also can adopt other materials to make matrix, as long as can guarantee to catch up with the fine and close stack of layer induction substrate.
7. carrying current wide oxygen sensor chip according to claim 1, is characterized in that, described diffusion barrier layer (23) is arranged on below hybrid chamber (21), the one side of more close heating line.
8. carrying current wide oxygen sensor chip according to claim 1, it is characterized in that, superficies at upper strata induction substrate (1) arrange catalytic reaction electrode (13), form the double cell broad domain oxygen sensor chip with carrying current pump battery unit and concentration cell unit.
9. carrying current wide oxygen sensor chip according to claim 8, it is characterized in that, tail gas lateral electrode (11) in hybrid chamber (21), form concentration cell unit as measurement electrode and reference air electrode (12) on the one hand, also form pump battery unit as electrode in pump battery and outside catalytic reaction electrode (13) on the other hand.
10. according to a preparation method for the carrying current wide oxygen sensor chip described in claim 1～9, it is characterized in that, the steps include:
One, first, same the Zirconium oxide powder of 5% mole of yittrium oxide PVB, terpinol and dibutyl phthalate are made to slurry with the quality of 70～86:6～12:4～9:4～9 than mixing and ball milling, then make zirconia green compact band by casting technique, become again middle level skeleton substrate (2) base substrate of upper strata induction substrate (1) base substrate, band diffusion chamber (21) square hole and reference air duct (22) square groove with 1 air hole and 2 electrode connecting holes by mould punching, and closed substrate (3) base substrate of smooth bottom;
Two, the electrode that contains 70%～90% platinum powder and electrocondution slurry are printed on to the inner surface of upper strata induction substrate (1) base substrate, form the printed patterns of tail gas lateral electrode (11), reference air side electrode (12) and the associated lead of isolation mutually, the tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate (1) base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again;
Three, prepare Woelm Alumina or zirconia slurry, be printed on closed substrate (3) the base substrate upper surface of bottom and hybrid chamber corresponding position with silk-screen printing technique, 50～200 microns of print thickness, to form diffusion barrier layer (23);
Four, the lower surface that the insulation paste that contains purity and reach more than 97% alumina powder is printed on to closed substrate (3) base substrate of bottom forms insulating barrier, again the electrocondution slurry that contains platinum powder is printed on this insulating barrier, to form heating line (31) pattern, finally republish one deck alumina insulating layer heating line is covered, and expose the heating line brace of tail end;
Five, next, substrate (1) base substrate, middle level skeleton substrate (2) base substrate are responded to in upper strata with the adhesive that contains zirconia powder, and closed substrate (3) exactitude position of bottom is stacked together, is heated to 40～60 degree and presses closely simultaneously;
Six, by the degreasing at low temperatures of lamination all-in-one-piece green compact, then spend high temperature sintering 1 ~ 3 hour 1300～1500, can prepare this carrying current wide oxygen sensor chip.
The preparation method of 11. 1 kinds of carrying current wide oxygen sensor chips according to claim 10, it is characterized in that, second step comprises the following steps: the electrode that contains 70%～90% platinum powder and electrocondution slurry are printed on to the inner surface of upper strata induction substrate (1) base substrate, form the printed patterns of measurement electrode (11), reference air side electrode (12) and the associated lead of isolation mutually; Same platinum electrode and electrocondution slurry are printed on to the outer surface of upper strata induction substrate (1) base substrate, form the printed patterns of pump battery external electrode (13) and associated lead; The tail end outer surface and 2 the electrode connecting holes that platinum electrocondution slurry are printed on to upper strata induction substrate (1) base substrate, form induction electrode brace and guarantee that it is connected with the electrode pattern of inner surface again.
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| CN104165905A (en) * | 2014-08-25 | 2014-11-26 | 深圳市宏业翔科技有限公司 | Oxygen sensor chip and preparation method thereof |
| CN105044174A (en) * | 2015-07-06 | 2015-11-11 | 黄海琴 | Novel limited current type plate oxygen sensor |
| CN106706729B (en) * | 2016-12-30 | 2023-08-08 | 莱鼎电子材料科技有限公司 | Novel chip type wide-area automobile oxygen sensor and preparation method thereof |
| CN109839414A (en) * | 2017-11-24 | 2019-06-04 | 英属开曼群岛商通润股份有限公司 | Array sensing electrode and its manufacturing method and sensing platform |
| CN108254429A (en) * | 2018-02-02 | 2018-07-06 | 常州联德电子有限公司 | Chip wide domain lambda sensor double cell cellular construction |
| CN108333243A (en) * | 2018-03-29 | 2018-07-27 | 常州联德电子有限公司 | Intelligent nitrogen oxide sensor induction chip |
| CN108414602B (en) * | 2018-04-24 | 2023-10-24 | 武汉泽科宁电子科技有限公司 | Wide-area linear oxygen sensor and manufacturing method thereof |
| CN108732224B (en) * | 2018-06-06 | 2020-07-28 | 成都科锐传感技术有限公司 | Preparation method of double-battery sheet type wide-area oxygen sensor |
| CN109546185B (en) * | 2019-01-08 | 2024-04-16 | 中氢新能技术有限公司 | Control system of methanol reforming fuel cell |
| CN110487874A (en) * | 2019-09-25 | 2019-11-22 | 中国兵器工业集团第二一四研究所苏州研发中心 | A kind of high-precision wide area type oxygen sensor chip |
| CN112255296B (en) * | 2020-10-23 | 2022-11-29 | 中国电子科技集团公司第四十九研究所 | Partial pressure type oxygen sensor based on ceramic co-firing technology and preparation method thereof |
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| JP2003344348A (en) * | 2002-05-23 | 2003-12-03 | Kyocera Corp | Oxygen sensor element |
| JP2011089796A (en) * | 2009-10-20 | 2011-05-06 | Denso Corp | Gas sensor element, method for manufacturing the same, and gas sensor |
| CN101949882B (en) * | 2010-08-31 | 2014-11-26 | 佛山市科傲电子科技有限公司 | Flat plate type oxygen sensor chip structure and manufacturing method thereof |
| CN202083663U (en) * | 2011-04-19 | 2011-12-21 | 谢光远 | Chip type wide-area automobile oxygen sensor |
| CN103529107B (en) * | 2013-10-18 | 2015-07-15 | 东北大学 | Limited current type oxygen sensor and manufacturing method thereof |
| CN203870065U (en) * | 2014-04-17 | 2014-10-08 | 常州联德电子有限公司 | Limited current type wide-band oxygen sensor chip |
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