CN103909475A - Dry-type processing method of reverse side roughness of large-size sapphire substrate slice - Google Patents
Dry-type processing method of reverse side roughness of large-size sapphire substrate slice Download PDFInfo
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- CN103909475A CN103909475A CN201410130482.2A CN201410130482A CN103909475A CN 103909475 A CN103909475 A CN 103909475A CN 201410130482 A CN201410130482 A CN 201410130482A CN 103909475 A CN103909475 A CN 103909475A
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- sapphire substrate
- roughness
- substrate sheet
- spray gun
- dry
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 70
- 239000010980 sapphire Substances 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 238000003672 processing method Methods 0.000 title claims abstract description 13
- 239000007921 spray Substances 0.000 claims abstract description 26
- 229910052580 B4C Inorganic materials 0.000 claims abstract description 21
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000843 powder Substances 0.000 claims abstract description 15
- 229940098458 powder spray Drugs 0.000 claims description 6
- 230000003746 surface roughness Effects 0.000 claims description 4
- 238000005507 spraying Methods 0.000 abstract 3
- 238000005422 blasting Methods 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000009700 powder processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Abstract
The invention relates to a dry-type processing method of the reverse side roughness of a large-size sapphire substrate slice. The dry-type processing method of the reverse side roughness of the large-size sapphire substrate slice comprises the following steps: putting a sapphire substrate slice two sides of which are grinded into a workpiece position of a rotary processing bench; spraying boron carbide powder on a processing side of the sapphire substrate slice by utilizing a spraying treatment device so as to reach the required roughness, wherein the hole depth of the workpiece position is greater than the thickness of 0.5mm-1mm of the sapphire substrate slice; rotating the rotary processing bench anticlockwise at the rotation speed of 20rpm-50rpm; and arranging spray guns at three parts of 90 degrees, 180 degrees and 270 degrees, and moving the spray guns back and forth at the speed of 30-60 times/min, wherein the calibers of the spray guns are 10mm-20mm, the spraying pressure of the spray guns is 0.12MPa-0.60MPa, and the boron carbide powder is #120-#130. The dry-type processing method of the reverse side roughness of the large-size sapphire substrate slice, which is provided by the invention, has the advantages that the inside roughness is low in deviation, and is high in stability; the poor rear side can be prevented effectively; the processing efficiency is improved; the processing cost is reduced.
Description
Technical field
The invention belongs to technical field of semiconductor illumination, particularly relate to the dry-type processing method of a kind of large-size sapphire substrate slice back side roughness.
Background technology
Sapphire single crystals (Sapphire), molecular formula is Al
2o
3, sapphire crystal hardness is very high, for 9 grades of Mohs' hardness, is only second to the hardest diamond.It has good light transmission, heat conductivity and electric insulating quality, and mechanics good mechanical property, and there is wear-resisting and weather-proof feature.The fusing point of sapphire crystal is 2050 ℃, 3500 ℃ of boiling points, and maximum operating temperature can reach 1900 ℃.At present, sapphire crystal, as a kind of important technology crystal, has been widely used in many fields of science and technology, national defence and civilian industry, electronic technology.Such as infra-red transmitting window gate material, the substrate base of microelectronic, laser host, optical element and other purposes etc.
For making LED chip, selecting of backing material is the problem of overriding concern.Conventionally, the epitaxial layer of GaN sill and device is mainly grown in Sapphire Substrate.Sapphire Substrate has many advantages: first, the production technology maturation of Sapphire Substrate, device quality are better; Secondly, sapphire stability is fine, can be used in high growth temperature process; Finally, sapphire mechanical strength is high, is easy to process and clean.Therefore, most of technique is generally all using sapphire as substrate.
Sapphire Substrate is as current the most general a kind of backing material, and the homogeneity of its back side roughness has very important impact to light transmittance and luminous efficiency.And traditional just seem unable to do what one wishes by the technique of twin grinding machining back surface roughness for the bad problem in the back side of effective solution Sapphire Substrate sheet and the problem of cutting down finished cost.Along with the develop rapidly of photoelectric technology, also day by day increase for the demand of Sapphire Substrate thereupon; The more important thing is and trend towards gradually large-size sapphire substrate slice.In order to meet the demand of industry development, the inventor has done a large amount of work at this point, puts forth effort to solve the particularly processing method of the back side roughness of large-size sapphire substrate slice of Sapphire Substrate sheet.
Summary of the invention
The object of this invention is to provide the dry-type processing method of large-size sapphire substrate slice back side roughness, effectively solve the bad problem in the back side of large-size sapphire substrate slice and cut down finished cost.
The technical scheme of technical solution problem of the present invention is, the dry-type processing method of a kind of large-size sapphire substrate slice back side roughness, it is characterized in that, Sapphire Substrate sheet after twin grinding is put into the workpiece position of rotation machine table, utilize ejection processing device boron carbide powder to be ejected on the machined surface of Sapphire Substrate sheet to reach required roughness, specifically comprise:
(1) the hole depth of described workpiece position is greater than the thickness 0.5mm～1mm of Sapphire Substrate sheet, to guarantee the stability of Sapphire Substrate sheet when processed;
(2) rotate machine table and rotate in a counter-clockwise direction, rotating speed is at 20rpm～50rpm;
(3) boron carbide powder spray gun is arranged on 90 °, 180 ° and 270 ° of three positions, and moves around with the speed of 30～60 times/min respectively, to guarantee the homogeneity of Sapphire Substrate sheet machined surface roughness;
(4) the muzzle bore of boron carbide powder spray gun is 10mm～20mm;
(5) the expulsion pressure of boron carbide powder spray gun is 0.12 MPa～0.60MPa;
(6) boron carbide powder is #120～#320.
Preferred as one, described expulsion pressure is adjusted by direct adjustment spray gun pressure.
Preferred as one, described expulsion pressure is adjusted by the distance of adjusting between spray gun and Sapphire Substrate sheet, and the distance between described spray gun and Sapphire Substrate sheet is 5mm～100mm.
Preferred as one, described expulsion pressure is adjusted by the angle of adjusting spray gun and Sapphire Substrate sheet, and the angle of described spray gun and Sapphire Substrate sheet is that spray angle is 1 °～90 °.
The present invention processes by ejection processing device and boron carbide powder the back side roughness of adjusting large-size sapphire substrate slice.The B that the blasting materials using is #120～#320
4c(boron carbide) powder.The actual conditions of blasting treatment can be set according to target roughness.It is to utilize the jet motion of blasting materials that large-size sapphire substrate slice back side roughness is adjusted in blasting treatment processing, Sapphire Substrate sheet surface is beaten to the target roughness of cutting to reach machined surface.The surface roughness that large-size sapphire substrate slice is adjusted in this blasting treatment processing can not impact its angularity.
In process, need the Sapphire Substrate sheet of processing to put into the station of rotation machine table, rotation machine table rotates, and is arranged on the moving around of spray gun of 3 positions of 90 °, 180 ° and 270 °, and blasting materials is ejected on processed Sapphire Substrate sheet uniformly.The speed moving around by adjusting spray gun, guarantees that the injected time of Sapphire Substrate sheet is to reach the homogeneity of final roughness.The expulsion pressure of blasting materials is adjusted and optimization according to target roughness in the scope of 0.12MPa～0.60MPa; Injecting time and emitted dose also can be adjusted and set according to target roughness.
Move at spray gun circumferential center from rotation machine table, move to periphery from the center of rotation machine table again, being 1 of lance ejection needs the state of machined surface back and forth according to Sapphire Substrate sheet, the speed that moves around of spray gun can be adjusted in the scope of 30～60 times/min.For expulsion pressure, can be that spray angle (being preferably 1 °～90 °) is adjusted by the distance (being preferably 5mm～100mm) between adjustment spray gun and Sapphire Substrate sheet or the angle of spray gun and Sapphire Substrate sheet; Also can directly adjust the expulsion pressure of spray gun.
The present invention is specially adapted to >=processing of the back side roughness of the large-size sapphire substrate slice of 6 inches, advantage of the present invention: the one, with respect to traditional technique of just processing roughness by twin grinding, have the advantages that in face, roughness deviation is little, stability is high; The 2nd, can effectively avoid the bad problem in the back side producing because of twin grinding; In the twin grinding process in San Shiqian road, can use the boron carbide fine powder processing of 3 μ m～50 μ m, can reduce so follow-up one side grinding and the removal amount of polishing, thereby improve working (machining) efficiency and cut down finished cost.
The specific embodiment
To carry out Sapphire Substrate sheet after twin grinding through the boron carbide fine powder that adopts 3 μ m～50 μ m and put into the workpiece position of rotation machine table, utilize ejection processing device boron carbide powder to be ejected on the machined surface of Sapphire Substrate sheet to reach required roughness.And according to the target roughness requirement of the face of the Sapphire Substrate sheet of need processing, select suitable processing conditions as follows:
1. blasting materials uses the B of No. #220
4c(boron carbide) powder;
2. use spray gun muzzle bore 15mm;
3. expulsion pressure is 0.2MPa;
4. the speed that moves around of spray gun is made as 45 times/min;
5. the rotating speed of machine table is 40rpm.
Processing result: average roughness Ra 0.70 μ m～0.80 μ m; In face, deviation is 0.10 μ m.
The roughness blasting treatment of large-size sapphire substrate slice is used that the particle size of blasting materials determines by following result of the test: about blasting materials for blasting treatment (powder), the common customer of Sapphire Substrate sheet to the requirement of back side roughness in the scope of 0.2 μ m～1.2 μ m.By evidence, use than No. #120 thicker B
4c(boron carbide) powder adds man-hour, the back side roughness > 1.2 μ m of Sapphire Substrate sheet; Use than No. #320 thinner B
4c(boron carbide) powder adds man-hour, the back side roughness < 0.2 μ m of Sapphire Substrate sheet.Therefore, as Sapphire Substrate sheet back side roughness, the blasting materials of use is adjusted in processing, adopts the B of #120～#320
4c(boron carbide) powder.
Claims (4)
1. the dry-type processing method of a large-size sapphire substrate slice back side roughness, it is characterized in that, Sapphire Substrate sheet after twin grinding is put into the workpiece position of rotation machine table, utilize ejection processing device boron carbide powder to be ejected on the machined surface of Sapphire Substrate sheet to reach required roughness, specifically comprise:
(1) the hole depth of described workpiece position is greater than the thickness 0.5mm～1mm of Sapphire Substrate sheet, to guarantee the stability of Sapphire Substrate sheet when processed;
(2) rotate machine table and rotate in a counter-clockwise direction, rotating speed is at 20rpm～50rpm;
(3) boron carbide powder spray gun is arranged on 90 °, 180 ° and 270 ° of three positions, and moves around with the speed of 30～60 times/min respectively, to guarantee the homogeneity of Sapphire Substrate sheet machined surface roughness;
(4) the muzzle bore of boron carbide powder spray gun is 10mm～20mm;
(5) the expulsion pressure of boron carbide powder spray gun is 0.12 MPa～0.60MPa;
(6) boron carbide powder is #120～#320.
2. the dry-type processing method of large-size sapphire substrate slice according to claim 1 back side roughness, is characterized in that, described expulsion pressure is adjusted by direct adjustment spray gun pressure.
3. the dry-type processing method of large-size sapphire substrate slice according to claim 1 back side roughness, it is characterized in that, described expulsion pressure is adjusted by the distance of adjusting between spray gun and Sapphire Substrate sheet, and the distance between described spray gun and Sapphire Substrate sheet is 5mm～100mm.
4. the dry-type processing method of large-size sapphire substrate slice according to claim 1 back side roughness, it is characterized in that, described expulsion pressure is adjusted by the angle of adjusting spray gun and Sapphire Substrate sheet, and the angle of described spray gun and Sapphire Substrate sheet is that spray angle is 1 °～90 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410130482.2A CN103909475A (en) | 2014-04-02 | 2014-04-02 | Dry-type processing method of reverse side roughness of large-size sapphire substrate slice |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410130482.2A CN103909475A (en) | 2014-04-02 | 2014-04-02 | Dry-type processing method of reverse side roughness of large-size sapphire substrate slice |
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| CN103909475A true CN103909475A (en) | 2014-07-09 |
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| CN201410130482.2A Pending CN103909475A (en) | 2014-04-02 | 2014-04-02 | Dry-type processing method of reverse side roughness of large-size sapphire substrate slice |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109015394A (en) * | 2018-08-10 | 2018-12-18 | 天通控股股份有限公司 | A kind of dry-type processing method of large scale lithium tantalate substrate slice back side roughness |
| CN110524431A (en) * | 2019-07-18 | 2019-12-03 | 浙江博蓝特半导体科技股份有限公司 | A kind of sapphire substrate sheet defect on back side regeneration treating method and sand blasting unit |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2392613Y (en) * | 1999-11-01 | 2000-08-23 | 信息产业部电子第五十五研究所 | Large-area precise scanning sand ejector |
| US20030143403A1 (en) * | 2002-01-31 | 2003-07-31 | Yukio Shibano | Large-sized substrate and method of producing the same |
| CN201307586Y (en) * | 2008-11-19 | 2009-09-09 | 建泓科技实业股份有限公司 | Wafer positioning carrier |
| CN102211317A (en) * | 2011-05-23 | 2011-10-12 | 锦州市锦利电器有限公司 | Multifunctional sandblasting moulding machine |
| CN102267102A (en) * | 2011-08-29 | 2011-12-07 | 邬建勋 | Sand/shot blasting device |
| CN103430281A (en) * | 2011-07-21 | 2013-12-04 | 新东工业株式会社 | Processing method of substrate for semiconductor elements |
-
2014
- 2014-04-02 CN CN201410130482.2A patent/CN103909475A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2392613Y (en) * | 1999-11-01 | 2000-08-23 | 信息产业部电子第五十五研究所 | Large-area precise scanning sand ejector |
| US20030143403A1 (en) * | 2002-01-31 | 2003-07-31 | Yukio Shibano | Large-sized substrate and method of producing the same |
| CN201307586Y (en) * | 2008-11-19 | 2009-09-09 | 建泓科技实业股份有限公司 | Wafer positioning carrier |
| CN102211317A (en) * | 2011-05-23 | 2011-10-12 | 锦州市锦利电器有限公司 | Multifunctional sandblasting moulding machine |
| CN103430281A (en) * | 2011-07-21 | 2013-12-04 | 新东工业株式会社 | Processing method of substrate for semiconductor elements |
| CN102267102A (en) * | 2011-08-29 | 2011-12-07 | 邬建勋 | Sand/shot blasting device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109015394A (en) * | 2018-08-10 | 2018-12-18 | 天通控股股份有限公司 | A kind of dry-type processing method of large scale lithium tantalate substrate slice back side roughness |
| CN110524431A (en) * | 2019-07-18 | 2019-12-03 | 浙江博蓝特半导体科技股份有限公司 | A kind of sapphire substrate sheet defect on back side regeneration treating method and sand blasting unit |
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Application publication date: 20140709 |