CN103904127A - Thin-film transistor - Google Patents
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- CN103904127A CN103904127A CN201210573729.9A CN201210573729A CN103904127A CN 103904127 A CN103904127 A CN 103904127A CN 201210573729 A CN201210573729 A CN 201210573729A CN 103904127 A CN103904127 A CN 103904127A
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- thin
- layer
- gas barrier
- film transistor
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- 230000004888 barrier function Effects 0.000 claims description 84
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- 229910001872 inorganic gas Inorganic materials 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
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- 239000000463 material Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
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- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical group C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 5
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- 238000010129 solution processing Methods 0.000 claims description 4
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- 230000002209 hydrophobic effect Effects 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
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- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
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- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
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- 238000002425 crystallisation Methods 0.000 claims description 2
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- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
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- 238000005507 spraying Methods 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 239000010410 layer Substances 0.000 description 134
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- 229910052804 chromium Inorganic materials 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a thin-film transistor comprising a grid electrode, a channel layer, a grid insulating layer which is arranged between the grid electrode and the channel layer, and a source electrode and a drain electrode which are arranged on the opposite two sides of the channel layer and respectively contacted with the channel layer. An organic air-blocking layer is formed on at least one side surface of the channel layer. The organic air-blocking layer of the thin-film transistor can protect the channel layer from being influenced by the external environment, and electrical properties of the thin-film transistor are not influenced.
Description
Technical field
The present invention relates to a kind of thin-film transistor.
Background technology
Along with the progress of technology, thin-film transistor has been widely applied among display, to adapt to the demand such as slimming and miniaturization of display.Thin-film transistor generally comprises the parts such as grid, drain electrode, source electrode and channel layer, and its voltage by control grid changes the conductivity of channel layer, makes to form between source electrode and drain electrode the state of conducting or cut-off.
Metal oxide semiconductor layer, as indium oxide gallium zinc (Indium Gallium Zinc Oxide, IGZO) layer, be often used as the channel layer of thin-film transistor, but because metal oxide semiconductor layer is subject to the such environmental effects such as the temperature, oxygen content, steam, illumination of external environment condition, therefore, need to use inorganic oxide or inorganic nitride, as SiO
2, Al
2o
3, SiON or SiO
xdeng, be used as protective layer or etch protection layer.But, this type oxide or protecting nitride layer need to use plasma enhanced chemical vapor deposition (Plasma-enhanced chemical vapor deposition, PECVD) or sputter coating (Sputter) form, and plasma in this processing procedure easily causes oxide semiconductor material layer to produce infringement, make oxide semiconductor material layer deteriorated, cause thin-film transistor easily to produce leakage current, even make the threshold voltage of thin-film transistor, current on/off ratio, the electric parameters such as subthreshold swing (Sub-threshold swing) deteriorated.
Summary of the invention
In view of this, be necessary to provide a kind of thin-film transistor that can protect impact that channel layer is not subject to external environment condition also not affect the electric property of thin-film transistor simultaneously.
A kind of thin-film transistor, comprise grid, channel layer, gate insulation layer between grid and channel layer and be positioned at the both sides that channel layer is relative and source electrode and the drain electrode contacting with channel layer respectively, at least one side surface of this channel layer, being formed with organic gas barrier layer.
In thin-film transistor provided by the invention, because this organic gas barrier layer can contact channel layer by blocks air molecule, thereby can avoid the oxygen molecule in thin-film transistor environment of living in to damage channel layer, because can adopting chemical vapour deposition (CVD) or solution processing procedure, makes this organic gas barrier layer, plasma while having avoided adopting plasma deposition damages the channel layer of being made up of oxide semiconductor material, thereby reduce thin-film transistor drain current, threshold voltage, current on/off ratio, the impact of the electric parameters such as subthreshold swing, guarantee the quality of thin-film transistor.
Accompanying drawing explanation
Fig. 1 is the structural representation of the thin-film transistor that provides of first embodiment of the invention.
Fig. 2 is the structural representation of the thin-film transistor that provides of second embodiment of the invention.
Fig. 3 is the structural representation of the thin-film transistor that provides of third embodiment of the invention.
Fig. 4 is the structural representation of the thin-film transistor that provides of fourth embodiment of the invention.
Fig. 5 is the structural representation of the thin-film transistor that provides of fifth embodiment of the invention.
Fig. 6 is the structural representation of the thin-film transistor that provides of sixth embodiment of the invention.
Main element symbol description
| Thin- |
10、20、30、40、50、60 |
| |
11 |
| Organic |
12 |
| |
13 |
| |
14 |
| |
15 |
| |
16 |
| |
17 |
| Inorganic |
18 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1, the thin-film transistor 10 that first embodiment of the invention provides comprises substrate 11, organic gas barrier layer 12, channel layer 13, source electrode 14, drain electrode 15, gate insulation layer 16 and grid 17.
This substrate 11 is for carrying organic gas barrier layer 12.The making material of this substrate 11 can be glass, quartz, silicon wafer, Merlon, polymethyl methacrylate or metal forming etc.
This organic gas barrier layer 12 is arranged on the upper surface of substrate 11.This organic gas barrier layer 12 is preferably the layer structure with hydrophobic property.These organic gas barrier layer 12 ingredients one of at least comprise in silicon, nitrogen, hydrogen, oxygen and carbon.In the present embodiment, the material of this organic gas barrier layer 12 can be HMDO (Hexamethyldisiloxane, C
6h
18oSi
2), hexamethyldisiloxane (Hexamethyldisilazane, C
6h
18nHSi
2), polymethyl methacrylate (Polymethyl Methacrylate, PMMA), epoxy resin (Epoxy), Merlon (Polycarbonate, PC) or plastic cement (Plastic) etc.In order not affect the optical property of thin-film transistor, the refractive index of this organic gas barrier layer 12 is more than or equal to 1.2.In the present embodiment, this organic gas barrier layer 12 can be by chemical vapour deposition (CVD) (Chemical Vapor Deposition, or solution processing procedure (Solution Process) CVD), the processing procedures such as for example spraying (Spray), spin coated (Spin Coating), some glue (Dispensing), ink-jet (Ink Jet), are formed on substrate 11.
This channel layer 13 is formed on the upper surface of organic gas barrier layer 12.This channel layer 13 can be made up of oxide semiconductor.Preferably, this channel layer 13 is metal oxide semiconductor layer.In the time that channel layer 13 is metal oxide semiconductor layer, its metal comprising can be selected from least one in indium (In), gallium (Ga), zinc (Zn), tin (Sn), aluminium (Al), plumbous (Pb), molybdenum (Mo), manganese (Mn), magnesium (Mg), germanium (Ge) and cadmium (Cd).In the present embodiment, this channel layer 13 is indium oxide gallium zinc (IGZO) layer.This channel layer 13 can be amorphism (amorphous), polycrystallinity (poly-crystal) or crystallinity (crystal) structure.In this enforcement, this channel layer 13 can be the structure that includes micro-crystallization (microcrystal).
This source electrode 14 and drain electrode 15 are arranged on the upper surface of channel layer 13, and are positioned at the relative left and right sides of channel layer 13.
This gate insulation layer 16 is formed on the upper surface of channel layer 13, and local covering source electrode 14 and drain electrode 15.The making material of this gate insulation layer 16 comprises the oxide S iOx of silicon, and the nitride SiNx of silicon or the nitrogen oxide SiONx of silicon, or the insulating material of other high-ks, as Ta
2o
5or HfO
2.
This grid 17 is arranged on the upper surface of gate insulation layer 16, and is positioned at the upper face center of gate insulation layer 16.The making material of this grid 17 can be selected from copper, aluminium, nickel, magnesium, chromium, molybdenum, tungsten and alloy thereof.
Because this organic gas barrier layer 12 can contact channel layer 13 by blocks air molecule, thereby can avoid the oxygen molecule in thin-film transistor 10 environment of living in to damage channel layer 13.And, when this organic gas barrier layer 12 is preferably hydrophobic layer, can also stops extraneous contact with moisture and damage channel layer 13.In addition, because can adopting chemical vapour deposition (CVD) or solution processing procedure, makes this organic gas barrier layer 12, plasma while having avoided adopting plasma deposition damages the channel layer 13 by oxide semiconductor material processing procedure, thereby reduce the impact on electric parameters such as thin-film transistor 10 leakage currents, threshold voltage, current on/off ratio, subthreshold swings (Sub-threshold swing), guarantee the quality of thin-film transistor 10.
Referring to Fig. 2, second embodiment of the invention provides a kind of thin-film transistor 20, and this thin-film transistor 20 comprises substrate 11 equally, organic gas barrier layer 12, channel layer 13, source electrode 14, drain electrode 15, gate insulation layer 16 and grid 17.The structure of this thin-film transistor 20 and thin-film transistor 10 is substantially identical, and difference is, organic gas barrier layer 12 of thin-film transistor 20 is arranged on the upper surface of channel layer 13, thereby this organic gas barrier layer 12 is between gate insulation layer 16 and channel layer 13.
Referring to Fig. 3, third embodiment of the invention provides a kind of thin-film transistor 30, and this thin-film transistor 30 comprises substrate 11 equally, organic gas barrier layer 12, channel layer 13, source electrode 14, drain electrode 15, gate insulation layer 16 and grid 17.The structure of this thin-film transistor 30 is substantially identical with thin-film transistor 10, difference is, thin-film transistor 30 includes two organic gas barrier layers 12, the one in these two organic gas barrier layers 12 between gate insulation layer 16 and channel layer 13, another one is between channel layer 13 and substrate 11.
Referring to Fig. 4, fourth embodiment of the invention provides a kind of thin-film transistor 40, and this thin-film transistor 40 comprises substrate 11, organic gas barrier layer 12 equally, channel layer 13, source electrode 14, drain electrode 15, gate insulation layer 16 and grid 17.Different from first three embodiment, thin- film transistor 10,20,30 is the thin-film transistor of top gate structure (top gate structure), and thin-film transistor 40 is the thin-film transistor of bottom grating structure (bottom gate structure).
The grid 17 of thin-film transistor 40 is arranged on the middle position of substrate 11 upper surfaces, gate insulation layer 16 is arranged on upper surface the cover gate 17 of substrate 11 equally, folded being located on gate insulation layer 16 of the organic gas barrier layer 12 of one deck, channel layer 13 is folded to be located on organic gas barrier layer 12, folded being located on channel layer 13 of the organic gas barrier layer 12 of another layer, source electrode 14, the folded relative left and right sides that are located on channel layer 13 and are positioned at channel layer 13 of drain electrode 15, and this source electrode 14, drain electrode 15 are local covers the folded organic gas barrier layer 12 on channel layer 13 that is located at.
Understandable, in previous embodiment, also can arrange in pairs or groups inorganic gas barrier layer of organic gas barrier layer 12 of thin- film transistor 10,20,30,40 uses, with the channel layer 13 of common protective film transistor 10,20,30,40.In the time that collocation is used inorganic gas barrier layer, this inorganic gas barrier layer can be provided as the Dual-layer structure in the middle of the organic gas barrier layer 12 in previous embodiment is folded in, and also can be provided as the single layer structure in the middle of jointly organic gas barrier layer 12 being folded in channel layer.
Referring to Fig. 5, fifth embodiment of the invention provides a kind of thin-film transistor 50 that adopts inorganic gas barrier layer 18.The thin-film transistor 30 that the structure of this thin-film transistor 50 and the 3rd embodiment provide is similar, difference is, this thin-film transistor 50 has adopted three layers of inorganic gas barrier layer 18, wherein two-layer inorganic gas barrier layer 18 be all folded between substrate 11 and channel layer 13 and this two-layer inorganic gas barrier layer 18 by the middle of the organic gas barrier layer 12 that closes on substrate 11 is folded in, the inorganic gas barrier layer 18 of one deck is formed between the organic gas barrier layer 12 and this gate insulation layer 16 that closes on gate insulation layer 16 in addition.
Referring to Fig. 6, sixth embodiment of the invention provides the another kind of thin-film transistor 60 that adopts inorganic gas barrier layer 18.The thin-film transistor 30 that the structure of this thin-film transistor 60 and the 4th embodiment provide is similar, difference is, this thin-film transistor 60 has adopted three layers of inorganic gas barrier layer 18, wherein two-layer inorganic gas barrier layer 18 be all folded between gate insulation layer 16 and channel layer 13 and this two-layer inorganic gas barrier layer 18 by the middle of the organic gas barrier layer 12 that closes on grid is folded in, the inorganic gas barrier layer 18 of one deck is formed on away from the middle of jointly this organic gas barrier layer 12 away from gate insulation layer 16 being folded on organic gas barrier layer 12 upper surfaces of gate insulation layer 16 and with channel layer 13 in addition.
The material of aforementioned inorganic gas barrier layer 18 can be oxide, nitride or nitrogen oxide.In the present embodiment, this inorganic gas barrier layer 18 is selected from the oxide (SiO of silicon
x), the nitride (SiN of silicon
x), the nitrogen oxide (SiON) of silicon and the oxide (AlO of aluminium
x).
Be understandable that, for the person of ordinary skill of the art, can make change and the distortion that other various pictures are answered by technical conceive according to the present invention, and all these change the protection range that all should belong to the claims in the present invention with distortion.
Claims (26)
1. a thin-film transistor, comprise grid, channel layer, gate insulation layer between grid and channel layer and be positioned at the both sides that channel layer is relative and source electrode and the drain electrode contacting with channel layer respectively, it is characterized in that: at least one side surface of this channel layer, be formed with organic gas barrier layer.
2. thin-film transistor as claimed in claim 1, is characterized in that, described organic gas barrier layer is hydrophobic layer.
3. thin-film transistor as claimed in claim 2, is characterized in that, the material of described organic gas barrier layer is HMDO, hexamethyldisiloxane, polymethyl methacrylate, epoxy resin, Merlon or plastic cement.
4. thin-film transistor as claimed in claim 2, is characterized in that, described organic gas barrier layer ingredient one of at least comprises in silicon, nitrogen, hydrogen, oxygen and carbon.
5. thin-film transistor as claimed in claim 2, is characterized in that, the refractive index of described organic gas barrier layer is more than or equal to 1.2.
6. thin-film transistor as claimed in claim 1, it is characterized in that, described channel layer is arranged on substrate, and this gate insulation layer and substrate lay respectively at the both sides up and down of channel layer, this thin-film transistor comprises an organic gas barrier layer, and this organic gas barrier layer is between channel layer and substrate.
7. thin-film transistor as claimed in claim 6, is characterized in that, between this organic gas barrier layer and substrate, is provided with inorganic gas barrier layer.
8. thin-film transistor as claimed in claim 7, is characterized in that, between this organic gas barrier layer and channel layer, is also provided with inorganic gas barrier layer.
9. thin-film transistor as claimed in claim 1, it is characterized in that, described channel layer is arranged on substrate, and this gate insulation layer and substrate lay respectively at the both sides up and down of channel layer, this thin-film transistor comprises an organic gas barrier layer, and this organic gas barrier layer is between gate insulation layer and channel layer.
10. thin-film transistor as claimed in claim 9, is characterized in that, between this organic gas barrier layer and gate insulation layer, is provided with inorganic gas barrier layer.
11. thin-film transistors as claimed in claim 10, is characterized in that, between this organic gas barrier layer and channel layer, are also provided with inorganic gas barrier layer.
12. thin-film transistors as claimed in claim 1, it is characterized in that, described channel layer is arranged on substrate, this gate insulation layer and substrate lay respectively at the both sides up and down of channel layer, this thin-film transistor comprises two organic gas barrier layers, and these two organic gas barrier layers lay respectively between channel layer and substrate and between channel layer and gate insulation layer.
13. thin-film transistors as claimed in claim 12, is characterized in that, between organic gas barrier layer of contiguous gate insulation layer and this gate insulation layer, are provided with inorganic gas barrier layer, and the both sides up and down of organic gas barrier layer of adjacent substrates are provided with inorganic gas barrier layer.
14. thin-film transistors as claimed in claim 1, it is characterized in that, described gate insulation layer is arranged on substrate, this channel layer is positioned at the upside of gate insulation layer, this substrate is positioned at the downside of gate insulation layer, this thin-film transistor comprises two organic gas barrier layers, these two organic gas barrier layers lay respectively between channel layer and gate insulation layer and upper surface away from the channel layer of gate insulation layer on.
15. thin-film transistors as claimed in claim 14, is characterized in that, the upper and lower both sides of organic gas barrier layer between channel layer and gate insulation layer are provided with inorganic gas barrier layer, are provided with inorganic gas barrier layer away from organic gas barrier layer upper surface of gate insulation layer.
16. thin-film transistors as claimed in claim 1, is characterized in that, described channel layer is oxide semiconductor layer.
17. thin-film transistors as claimed in claim 16, it is characterized in that, described channel layer is metal oxide semiconductor layer, and this metal oxide semiconductor layer institute containing metal is selected from least one in indium, gallium, zinc, tin, aluminium, lead, molybdenum, manganese, magnesium, germanium and cadmium.
18. thin-film transistors as claimed in claim 1, is characterized in that, described channel layer is amorphism, polycrystallinity or crystalline structure.
19. thin-film transistors as claimed in claim 18, is characterized in that, described channel layer has micro-crystallization structure.
20. thin-film transistors as claimed in claim 1, is characterized in that, this thin-film transistor is top gate structure or bottom grating structure thin-film transistor.
21. thin-film transistors as claimed in claim 1, is characterized in that, this thin-film transistor is coplanar structure or anti-co-planar thin film transistor.
22. thin-film transistors as claimed in claim 1, is characterized in that, this thin-film transistor is staggered or reciprocal cross shift thin-film transistor.
23. thin-film transistors as claimed in claim 1, is characterized in that, this organic gas barrier layer is formed by chemical vapour deposition (CVD) or solution processing procedure.
24. thin-film transistors as claimed in claim 23, is characterized in that, this organic gas barrier layer by spraying, spin coated, some glue or ink-jet form.
25. thin-film transistors as described in claim 7,8,10,11,13 or 15, is characterized in that, the material of this inorganic gas barrier layer is oxide, nitride or nitrogen oxide.
26. thin-film transistors as claimed in claim 25, is characterized in that, the material of this inorganic gas barrier layer is selected from nitride, the nitrogen oxide of silicon and the oxide of aluminium of the oxide of silicon, silicon.
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| CN109301067A (en) * | 2018-08-01 | 2019-02-01 | 华南师范大学 | A kind of hexamethyldisilazane modification Organic Thin Film Transistors and preparation method thereof |
| WO2019134535A1 (en) * | 2018-01-05 | 2019-07-11 | 京东方科技集团股份有限公司 | Thin film transistor and manufacturing method therefor, array substrate, and display device |
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