CN103901278B - Based on the material method for measuring complex dielectric constant in substrate integration wave-guide circular resonant chamber - Google Patents

Abstract

Based on the material method for measuring complex dielectric constant in substrate integration wave-guide circular resonant chamber, relate to material complex permittivity technical field of measurement and test.First processing has the substrate integration wave-guide circular resonant chamber of different resonance frequency (frequency of operation), then for the substrate integration wave-guide circular resonant chamber of same resonance frequency, the sample that loading one is identical with dielectric layer 2 material respectively, the standard model that complex permittivity is known and testing sample, utilize vector network analyzer feed-in swept-frequency signal respectively, the resonance frequency of test three samples and quality factor, last simultaneous equations solve, and can obtain the complex permittivity of testing sample under the frequency of operation of described substrate integration wave-guide circular resonant chamber.Use the substrate integration wave-guide circular resonant chamber of other frequency of operation instead, repeat same test process, the multifrequency point test of material complex permittivity can be completed.It is little, easy to process that the present invention has resonator cavity volume, and measurement result precision is high.

Description

Based on the material method for measuring complex dielectric constant in substrate integration wave-guide circular resonant chamber

Technical field

The present invention relates to material complex permittivity technical field of measurement and test, particularly based on the material method for measuring complex dielectric constant of microwave cavity.

Background technology

Microwave material has been widely used in the every field of microwave as electromagnetic transmission medium, such as microwave circuit, communication, radar invisible etc.The electromagnetic parameter of dielectric material generally refers to complex permittivity and complex permeability, usually with plural form ε (j ω)=ε ' (j ω)-j ε, " (j ω); μ (j ω)=μ ' (j ω)-j μ " (j ω) represents, it describes material and electromagnetic field to interact two the most basic characteristic parameters.Accurate understanding electromagnetic parameter value, is absolutely necessary in the types of applications of microwave frequency band for the application of microwave energy and material.

The electromagnetic parameter testing technology of material, through the development of nearly decades, has defined the more complete scientific system of a set of ratio.At present, in microwave and millimere-wave band, the electromagnetic parameter test method of material can be divided into the large class of Transmission line method, Resonant-cavity Method two by measuring principle.But these two kinds of methods exist some problems all separately, and such as Transmission line method measuring accuracy is not high, make sample inconvenient, and calibration accuracy requires high; Resonant-cavity Method is the test carried out based on perturbation method, be suitable only for the test of single-frequency point, multifrequency point test needs to carry out in multiple resonator cavity working in different frequency, and this is that rectangle or the resonator cavity of circle all can increase testing cost greatly for Metal cavity.

Planar resonant circuit engineering is because of easy to process cheap, and it is with the obvious advantage and be widely used in the measurement of material dielectric constant to compare Metal cavity.Such as, researchist adopts circuited microstrip loop resonator, microstrip coupled dielectric resonator carrys out Measuring Dielectric Constant, but due to the quality factor of the planar circuits such as microstrip line lower, radiation loss is comparatively large, thus measures accurate not.

Summary of the invention

The invention provides a kind of material method for measuring complex dielectric constant based on substrate integration wave-guide circular resonant chamber, the method carries out material complex-permittivity measurement based on substrate integration wave-guide circular resonant chamber, has high, the radiationless loss of quality factor, tests feature accurately; Meanwhile, adopt the substrate integration wave-guide circular resonant chamber of multiple different resonance frequency, multifrequency point can be realized and measure.

Technical solution of the present invention is:

Based on the material method for measuring complex dielectric constant in substrate integration wave-guide circular resonant chamber, comprise the following steps:

Step 1: processing has the substrate integration wave-guide circular resonant chamber of different resonance frequency.The structure in described substrate integration wave-guide circular resonant chamber as shown in Figure 1, 2, the dielectric-slab being all coated with metal conducting layer by tow sides processes, comprise metal conducting layer 1, dielectric layer 2, lower metal conducting layer 3, described dielectric layer 2 is between upper metal conducting layer 1 and lower metal conducting layer 3, and upper metal conducting layer 1 and lower metal conducting layer 3 link together by some rounded equally distributed plated-through holes 4.The mode of operation in described substrate integration wave-guide circular resonant chamber adopts second higher mode TM ₂₁₀mould, design adds and corresponds to the substrate integration wave-guide circular resonant chamber size of this pattern man-hour by resonance frequency f ₂₁₀obtained by formula (1):

$f_{210}=\frac{c}{2\mathrm{\π}\sqrt{{\mathrm{\μ}}_r{\mathrm{\ϵ}}_r}}\sqrt{{\left(\frac{p_{21}}{a_{\mathrm{eff}}}\right)}^2}---\left(1\right)$

Wherein c is the light velocity, μ _rthe relative permeability of dielectric layer 2, ε _rthe relative dielectric constant of dielectric layer 2, p ₂₁=5.136 is first zero point of second order Bessel's function, a _effbe the equivalent redius in described substrate integration wave-guide circular resonant chamber, the relation between it and the real radius a in described substrate integration wave-guide circular resonant chamber can be determined by (2) formula:

$a_{\mathrm{eff}}=a-\frac{D^2}{0.95b}---\left(2\right)$

Wherein D is the diameter of plated-through hole 4, b is the center of circle spacing of adjacent two plated-through holes 4 on same level cross section, and the real radius a in described substrate integration wave-guide circular resonant chamber is the distance between the center of circle of any one plated-through hole 4 on same level cross section and the geometric center in described substrate integration wave-guide circular resonant chamber.

Described substrate integration wave-guide circular resonant chamber also has a power feed hole 5 and a test sample loading hole 6, described power feed hole carries out feed by coaxial feed joint 7, during feed, outer conductor and the upper metal conducting layer 1 of coaxial feed joint 7 are electrically connected, and the inner wire of coaxial feed joint 7 inserts power feed hole 5 and is electrically connected with lower metal conducting layer 3.Described test sample loading hole 6 is a cylindrical hole, is positioned at distance power feed hole 5 geometric center peak electric field place farthest.

Step 2: the complex permittivity of different resonance frequency substrate integration wave-guide circular resonant chambeies to dielectric sample to be measured that have adopting step 1 to process is tested.Detailed process is as follows:

First adopt same substrate integration wave-guide circular resonant chamber, to the frequency of operation of dielectric sample to be measured in this substrate integration wave-guide circular resonant chamber, namely this substrate integration wave-guide adds resonance frequency f corresponding to man-hour in design ₂₁₀under complex permittivity test, comprise the following steps:

Step 2-1: measure the resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁.Concrete employing one sample identical and identical with dielectric layer 2 material with test sample loading hole 6 shape loads on to be tested in sample loading hole 6, and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole 5, measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁; The now resonance frequency f in substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁be exactly the resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁.

Step 2-2: measure the resonance frequency f during loading standard specimen of described substrate integration wave-guide circular resonant chamber ₂and quality factor q ₂.Concrete employing one and that complex permittivity known standard model identical with test sample loading hole 6 shape loads on to be tested in sample loading hole 6, and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole 5, measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₂and quality factor q ₂.

Step 2-3: measure the resonance frequency f during loading testing sample of described substrate integration wave-guide circular resonant chamber ₃and quality factor q ₃.Concrete employing one testing sample identical with test sample loading hole 6 shape loads on to be tested in sample loading hole 6, and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole 5, measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₃and quality factor q ₃.

Step 2-4: the complex permittivity calculating testing sample.

First simultaneous formula (3) and (4), calculates perturbation constant A and B:

${\mathrm{\ϵ}}_2^{,}=\frac{{\mathrm{A\ϵ}}_1^{,}{V}_c}{V_s}\left(\frac{f_1-f_2}{f_2}\right)+{\mathrm{\ϵ}}_1^{,}---\left(3\right)$

$\tan {\mathrm{\δ}}_2=\frac{{\mathrm{\ϵ}}_2^{,,}}{{\mathrm{\ϵ}}_2^{,}}=\frac{{\mathrm{BV}}_c}{V_s}\left(\frac{Q_1-Q_2}{Q_1{Q}_2}\right)\frac{1}{{\mathrm{\ϵ}}_2^{,}}+\tan {\mathrm{\δ}}_1---\left(4\right)$

Simultaneous formula (5) and (6) again, calculate the complex permittivity of testing sample:

${\mathrm{\ϵ}}_3^{,}=\frac{{\mathrm{A\ϵ}}_1^{,}{V}_c}{V_s}\left(\frac{f_1-f_3}{f_3}\right)+{\mathrm{\ϵ}}_1^{,}---\left(5\right)$

$\tan {\mathrm{\δ}}_3=\frac{{\mathrm{\ϵ}}_3^{,,}}{{\mathrm{\ϵ}}_3^{,}}=\frac{{\mathrm{BV}}_c}{V_s}\left(\frac{Q_1-Q_3}{Q_1{Q}_3}\right)\frac{1}{{\mathrm{\ϵ}}_3^{,}}+\tan {\mathrm{\δ}}_1---\left(6\right)$

In formula (3) ~ formula (6): V _cthe volume in described substrate integration wave-guide circular resonant chamber, V _sthe volume of test sample loading hole 6, the real part of the complex permittivity of dielectric layer 2 material under described substrate integration wave-guide frequency of operation, the imaginary part of the complex permittivity of dielectric layer 2 material under described substrate integration wave-guide frequency of operation, the real part of the complex permittivity of standard model material under described substrate integration wave-guide frequency of operation, the imaginary part of the complex permittivity of standard model material under described substrate integration wave-guide frequency of operation, the real part of the complex permittivity of testing sample material under described substrate integration wave-guide frequency of operation, the imaginary part of the complex permittivity of testing sample material under described substrate integration wave-guide frequency of operation, the loss tangent of dielectric layer 2 material under described substrate integration wave-guide frequency of operation, the loss tangent of standard model material under described substrate integration wave-guide frequency of operation, the loss tangent of testing sample material under described substrate integration wave-guide frequency of operation.

Then use the same substrate integration wave-guide circular resonant chamber of other frequency of operation instead, repeat the operation of step 2-1 to step 2-4, the complex permittivity of testing medium sample under corresponding frequency of operation can be recorded.

It should be noted that:

One, in technique scheme step 2-1 measure described substrate integration wave-guide circular resonant chamber unloaded time resonance frequency f ₁and quality factor q ₁time, be after described substrate integration wave-guide circular resonant chamber machines, adopt to load on the sample of dielectric layer 2 same material to test in sample loading hole 6 and carry out testing.In fact, resonance frequency f when substrate integration wave-guide circular resonant chamber is unloaded ₁and quality factor q ₁also in the process of substrate integration wave-guide circular resonant chamber, namely can test before sample loading hole 6 is processed after completing power feed hole 5 processing.The resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber is carried out after sample can be avoided like this to load empty processing ₁and quality factor q ₁the error of test, but be unfavorable for the processing in substrate integration wave-guide circular resonant chamber.

Two, substrate integration wave-guide circular resonant chamber provided by the invention, the mode of operation adopted has four maximum field positions in resonator cavity, the Homogeneous Axisymmetrical distribution of 90 °, interval.Maximum field is determined by feed placement at the particular location of circumferencial direction, is determined by resonator cavity radius at the particular location of radial direction.Test sample loading hole 6 is positioned at distance power feed hole geometric center peak electric field place farthest, and this position is apart from the distance R of chamber central _sdetermined by following formula:

$R_s=\frac{p_{\max 1}}{p_{21}}\×a_{\mathrm{eff}}---\left(7\right)$

Wherein, p _max1the argument value that second order Bessel's function is corresponding when getting first maximum value, namely 3.056, p ₂₁first zero point of second order Bessel's function, namely 5.136.

Three, in order to ensure that measurement result has higher accuracy and sensitivity, the volume V in substrate integration wave-guide circular resonant chamber _cwith the volume V of test sample loading hole 6 _sratio should be arranged between 200 ~ 400.

Four, the present invention can realize the high precision measurement of low-loss microwave solid-state material complex permittivity.Sample only need be processed to the shape identical with sample loading hole 6 and size, adds a cover sheet metal during measurement at post two ends, hole.The present invention is equally also applicable to the test carrying out liquid and powdered sample.

The invention has the beneficial effects as follows:

One, substrate integration wave-guide circular resonant chamber of the present invention perturbation method is tested, and substrate integration wave-guide is easy to process compared with Metal cavity, with low cost, and comparatively other plane resonantor quality factor such as microstrip line are high, measuring accuracy is high.

Two, the present invention adopts substrate integration wave-guide circular resonant chamber, and when equal frequencies works, circular cavity is less compared with rectangular cavity volume, reduces costs further.

Three, the present invention adopt comparatively rectangular cavity quality factor are higher in substrate integration wave-guide circular resonant chamber, higher figure of merit is conducive to realizing higher measuring accuracy.

Four, the present invention adopts substrate integration wave-guide circular resonant chamber, only need determine this parameter of radius when carrying out Resonator design; Adopt the TM with axial symmetry simultaneously ₂₁₀mould, is convenient to rapid Design; And rectangular cavity has length and width two parameters to need to determine, design is comparatively complicated.Therefore, a series of different frequency resonator cavity can be designed by easy formula, can multiple discrete frequency be tested in broad frequency range, stable performance.

Five, low to the requirement of sample, be suitable for the test of solid, powder and fluid sample, anticipate without the need to doing paraffin solidification etc. to sample, test result is more credible.

Accompanying drawing explanation

Fig. 1 is the vertical view in substrate integration wave-guide circular resonant chamber in the present invention.

Fig. 2 is the cut-open view in substrate integration wave-guide circular resonant chamber in the present invention.

Embodiment

Based on the material method for measuring complex dielectric constant in substrate integration wave-guide circular resonant chamber, comprise the following steps:

Step 1: processing has the substrate integration wave-guide circular resonant chamber of different resonance frequency.The structure in described substrate integration wave-guide circular resonant chamber as shown in Figure 1, 2, the dielectric-slab being all coated with metal conducting layer by tow sides processes, comprise metal conducting layer 1, dielectric layer 2, lower metal conducting layer 3, described dielectric layer 2 is between upper metal conducting layer 1 and lower metal conducting layer 3, and upper metal conducting layer 1 and lower metal conducting layer 3 link together by some rounded equally distributed plated-through holes 4.The mode of operation in described substrate integration wave-guide circular resonant chamber adopts second higher mode TM ₂₁₀mould, design adds and corresponds to the substrate integration wave-guide circular resonant chamber size of this pattern man-hour by resonance frequency f ₂₁₀obtained by formula (1):

$f_{210}=\frac{c}{2\mathrm{\π}\sqrt{{\mathrm{\μ}}_r{\mathrm{\ϵ}}_r}}\sqrt{{\left(\frac{p_{21}}{a_{\mathrm{eff}}}\right)}^2}---\left(1\right)$

Wherein c is the light velocity, μ _rthe relative permeability of dielectric layer 2, ε _rthe relative dielectric constant of dielectric layer 2, p ₂₁=5.136 is first zero point of second order Bessel's function, a _effbe the equivalent redius in described substrate integration wave-guide circular resonant chamber, the relation between it and the real radius a in described substrate integration wave-guide circular resonant chamber can be determined by (2) formula:

$a_{\mathrm{eff}}=a-\frac{D^2}{0.95b}---\left(2\right)$

Wherein D is the diameter of plated-through hole 4, b is the center of circle spacing of adjacent two plated-through holes 4 on same level cross section, and the real radius a in described substrate integration wave-guide circular resonant chamber is the distance between the center of circle of any one plated-through hole 4 on same level cross section and the geometric center in described substrate integration wave-guide circular resonant chamber.

Described substrate integration wave-guide circular resonant chamber also has a power feed hole 5 and a test sample loading hole 6, described power feed hole carries out feed by coaxial feed joint 7, during feed, outer conductor and the upper metal conducting layer 1 of coaxial feed joint 7 are electrically connected, and the inner wire of coaxial feed joint 7 inserts power feed hole 5 and is electrically connected with lower metal conducting layer 3.Described test sample loading hole 6 is a cylindrical hole, is positioned at distance power feed hole 5 geometric center peak electric field place farthest.

Step 2: the complex permittivity of different resonance frequency substrate integration wave-guide circular resonant chambeies to dielectric sample to be measured that have adopting step 1 to process is tested.Detailed process is as follows:

First adopt same substrate integration wave-guide circular resonant chamber, to the frequency of operation of dielectric sample to be measured in this substrate integration wave-guide circular resonant chamber, namely this substrate integration wave-guide adds resonance frequency f corresponding to man-hour in design ₂₁₀under complex permittivity test, comprise the following steps:

Step 2-1: measure the resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁.Concrete employing one sample identical and identical with dielectric layer 2 material with test sample loading hole 6 shape loads on to be tested in sample loading hole 6, and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole 5, measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁; The now resonance frequency f in substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁be exactly the resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁.

Step 2-2: measure the resonance frequency f during loading standard specimen of described substrate integration wave-guide circular resonant chamber ₂and quality factor q ₂.Concrete employing one and that complex permittivity known standard model identical with test sample loading hole 6 shape loads on to be tested in sample loading hole 6, and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole 5, measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₂and quality factor q ₂.

Step 2-3: measure the resonance frequency f during loading testing sample of described substrate integration wave-guide circular resonant chamber ₃and quality factor q ₃.Concrete employing one testing sample identical with test sample loading hole 6 shape loads on to be tested in sample loading hole 6, and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole 5, measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₃and quality factor q ₃.

Step 2-4: the complex permittivity calculating testing sample.

First simultaneous formula (3) and (4), calculates perturbation constant A and B:

${\mathrm{\ϵ}}_2^{,}=\frac{{\mathrm{A\ϵ}}_1^{,}{V}_c}{V_s}\left(\frac{f_1-f_2}{f_2}\right)+{\mathrm{\ϵ}}_1^{,}---\left(3\right)$

$\tan {\mathrm{\δ}}_2=\frac{{\mathrm{\ϵ}}_2^{,,}}{{\mathrm{\ϵ}}_2^{,}}=\frac{{\mathrm{BV}}_c}{V_s}\left(\frac{Q_1-Q_2}{Q_1{Q}_2}\right)\frac{1}{{\mathrm{\ϵ}}_2^{,}}+\tan {\mathrm{\δ}}_1---\left(4\right)$

Simultaneous formula (5) and (6) again, calculate the complex permittivity of testing sample:

${\mathrm{\ϵ}}_3^{,}=\frac{{\mathrm{A\ϵ}}_1^{,}{V}_c}{V_s}\left(\frac{f_1-f_3}{f_3}\right)+{\mathrm{\ϵ}}_1^{,}---\left(5\right)$

$\tan {\mathrm{\δ}}_3=\frac{{\mathrm{\ϵ}}_3^{,,}}{{\mathrm{\ϵ}}_3^{,}}=\frac{{\mathrm{BV}}_c}{V_s}\left(\frac{Q_1-Q_3}{Q_1{Q}_3}\right)\frac{1}{{\mathrm{\ϵ}}_3^{,}}+\tan {\mathrm{\δ}}_1---\left(6\right)$

In formula (3) ~ formula (6): V _cthe volume in described substrate integration wave-guide circular resonant chamber, V _sthe volume of test sample loading hole 6, the real part of the complex permittivity of dielectric layer 2 material under described substrate integration wave-guide frequency of operation, the imaginary part of the complex permittivity of dielectric layer 2 material under described substrate integration wave-guide frequency of operation, the real part of the complex permittivity of standard model material under described substrate integration wave-guide frequency of operation, the imaginary part of the complex permittivity of standard model material under described substrate integration wave-guide frequency of operation, the real part of the complex permittivity of testing sample material under described substrate integration wave-guide frequency of operation, the imaginary part of the complex permittivity of testing sample material under described substrate integration wave-guide frequency of operation, the loss tangent of dielectric layer 2 material under described substrate integration wave-guide frequency of operation, the loss tangent of standard model material under described substrate integration wave-guide frequency of operation, the loss tangent of testing sample material under described substrate integration wave-guide frequency of operation.

Then use the same substrate integration wave-guide circular resonant chamber of other frequency of operation instead, repeat the operation of step 2-1 to step 2-4, the complex permittivity of testing medium sample under corresponding frequency of operation can be recorded.

This method of testing is tested based on single port, and used quality factor all pass through S ₁₁three dB bandwidth and resonance frequency determine.As embodiment, devise five resonator cavitys working in different frequency, without 0.915GHz, 1.2GHz, 1.48GHz, 1.91GHz and the 2.45GHz respectively of frequency of operation during perturbation, that substrate adopts is cheap TaconicRF35, substrate parameters is (specific inductive capacity 3.5, loss tangent 0.0018).

Test the sample of differing dielectric constant in above five resonator cavitys, the known dielectric constant medium of employing is (ε ^"=5, loss tangent=0.05), result is as shown in the table:

Table 1 is based on the measurement result of emulated data

Result shows except real part of permittivity is that except 1, other real parts measurement relative error is all less than 2.5%, and loss tangent other relative error basic controlling except 0, within 5%, this demonstrate measurement validity of the present invention.

Claims (4)

1., based on the material method for measuring complex dielectric constant in substrate integration wave-guide circular resonant chamber, comprise the following steps:

Step 1: processing has the substrate integration wave-guide circular resonant chamber of different resonance frequency; The dielectric-slab that described substrate integration wave-guide circular resonant chamber is all coated with metal conducting layer by tow sides processes, comprise metal conducting layer (1), dielectric layer (2), lower metal conducting layer (3), described dielectric layer (2) is positioned between metal conducting layer (1) and lower metal conducting layer (3), and upper metal conducting layer (1) and lower metal conducting layer (3) link together by some rounded equally distributed plated-through holes (4); The mode of operation in described substrate integration wave-guide circular resonant chamber adopts second higher mode TM ₂₁₀mould, design adds and corresponds to the substrate integration wave-guide circular resonant chamber size of this pattern man-hour by resonance frequency f ₂₁₀obtained by formula (1):

$f_{210}=\frac{c}{2\mathrm{\π}\sqrt{{\mathrm{\μ}}_r{\mathrm{\ϵ}}_r}}\sqrt{{\left(\frac{p_{21}}{a_{eff}}\right)}^2}---\left(1\right)$

Wherein c is the light velocity, μ _rthe relative permeability of dielectric layer (2), ε _rthe relative dielectric constant of dielectric layer (2), p ₂₁=5.136 is first zero point of second order Bessel's function, a _effbe the equivalent redius in described substrate integration wave-guide circular resonant chamber, the relation between it and the real radius a in described substrate integration wave-guide circular resonant chamber can be determined by (2) formula:

$a_{eff}=a-\frac{D^2}{0.95b}---\left(2\right)$

Wherein D is the diameter of plated-through hole (4), b is the center of circle spacing of adjacent two plated-through holes (4) on same level cross section, and the real radius a in described substrate integration wave-guide circular resonant chamber is the distance between the center of circle of any one plated-through hole (4) on same level cross section and the geometric center in described substrate integration wave-guide circular resonant chamber;

Described substrate integration wave-guide circular resonant chamber also has a power feed hole (5) and test sample loading hole (6), described power feed hole carries out feed by coaxial feed joint (7), during feed, outer conductor and the upper metal conducting layer (1) of coaxial feed joint (7) are electrically connected, and the inner wire of coaxial feed joint (7) inserts power feed hole (5) and is electrically connected with lower metal conducting layer (3); Described test sample loading hole (6) is a cylindrical hole, is positioned at distance power feed hole (5) geometric center peak electric field place farthest;

Step 2: the complex permittivity of different resonance frequency substrate integration wave-guide circular resonant chambeies to dielectric sample to be measured that have adopting step 1 to process is tested; Detailed process is as follows:

First adopt same substrate integration wave-guide circular resonant chamber, to the frequency of operation of dielectric sample to be measured in this substrate integration wave-guide circular resonant chamber, namely this substrate integration wave-guide circular resonant chamber adds resonance frequency f corresponding to man-hour in design ₂₁₀under complex permittivity test, comprise the following steps:

Step 2-1: measure the resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁; Concrete employing one sample identical and identical with dielectric layer (2) material with test sample loading hole (6) shape loads on to be tested in sample loading hole (6), and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole (5), measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁; The now resonance frequency f in substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁be exactly the resonance frequency f during zero load of described substrate integration wave-guide circular resonant chamber ₁and quality factor q ₁;

Step 2-2: measure the resonance frequency f during loading standard specimen of described substrate integration wave-guide circular resonant chamber ₂and quality factor q ₂; Concrete employing one and that complex permittivity known standard model identical with test sample loading hole (6) shape loads on to be tested in sample loading hole (6), and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole (5), measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₂and quality factor q ₂;

Step 2-3: measure the resonance frequency f during loading testing medium sample of described substrate integration wave-guide circular resonant chamber ₃and quality factor q ₃; Concrete employing one the testing medium sample identical with test sample loading hole (6) shape loads on to be tested in sample loading hole (6), and cover tightly upper and lower two end faces with sheet metal, then the sweep check signal exported by vector network analyzer, by concentric cable feed-in power feed hole (5), measures the resonance frequency f in now substrate integration wave-guide circular resonant chamber ₃and quality factor q ₃;

Step 2-4: the complex permittivity calculating testing medium sample;

First simultaneous formula (3) and (4), calculates perturbation constant A and B:

${\mathrm{\ϵ}}_2^{,}=\frac{{\mathrm{A\ϵ}}_1^{,}{V}_c}{V_s}\left(\frac{f_1-f_2}{f_2}\right)+{\mathrm{\ϵ}}_1^{,}---\left(3\right)$

${\mathrm{tan\δ}}_2=\frac{{\mathrm{\ϵ}}_2^{,,}}{{\mathrm{\ϵ}}_2^{,}}=\frac{{\mathrm{BV}}_c}{V_s}\left(\frac{Q_1-Q_2}{Q_1{Q}_2}\right)\frac{1}{{\mathrm{\ϵ}}_2^{,}}+{\mathrm{tan\δ}}_1---\left(4\right)$

Simultaneous formula (5) and (6) again, calculate the complex permittivity of testing medium sample:

${\mathrm{\ϵ}}_3^{,}=\frac{{\mathrm{A\ϵ}}_1^{,}{V}_c}{V_s}\left(\frac{f_1-f_3}{f_3}\right)+{\mathrm{\ϵ}}_1^{,}---\left(5\right)$

${\mathrm{tan\δ}}_3=\frac{{\mathrm{\ϵ}}_3^{,,}}{{\mathrm{\ϵ}}_3^{,}}=\frac{{\mathrm{BV}}_c}{V_s}\left(\frac{Q_1-Q_3}{Q_1{Q}_3}\right)\frac{1}{{\mathrm{\ϵ}}_3^{,}}+{\mathrm{tan\δ}}_1---\left(6\right)$

In formula (3) ~ formula (6): V _cthe volume in described substrate integration wave-guide circular resonant chamber, V _sthe volume of test sample loading hole (6), ε ' ₁the real part of the complex permittivity of dielectric layer (2) material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, ε " ₁the imaginary part of the complex permittivity of dielectric layer (2) material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, ε ' ₂the real part of the complex permittivity of standard model material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, ε " ₂the imaginary part of the complex permittivity of standard model material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, ε ' ₃the real part of the complex permittivity of testing medium specimen material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, ε " ₃the imaginary part of the complex permittivity of testing medium specimen material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, tan δ ₁=ε " ₁/ ε ' ₁the loss tangent of dielectric layer (2) material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, tan δ ₂=ε " ₂/ ε ' ₂the loss tangent of standard model material under the frequency of operation of described substrate integration wave-guide circular resonant chamber, tan δ ₃=ε " ₃/ ε ' ₃the loss tangent of testing medium specimen material under the frequency of operation of described substrate integration wave-guide circular resonant chamber;

Then use the same substrate integration wave-guide circular resonant chamber of other frequency of operation instead, repeat the operation of step 2-1 to step 2-4, the complex permittivity of testing medium sample under corresponding frequency of operation can be recorded.

2. the material method for measuring complex dielectric constant based on substrate integration wave-guide circular resonant chamber according to claim 1, is characterized in that, resonance frequency f when described substrate integration wave-guide circular resonant chamber is unloaded ₁and quality factor q ₁test be in the process of substrate integration wave-guide circular resonant chamber, namely complete power feed hole (5) processing after sample loading hole (6) processing before test, to save step 2-1.

3. the material method for measuring complex dielectric constant based on substrate integration wave-guide circular resonant chamber according to claim 1, it is characterized in that, test sample loading hole (6) is positioned at distance power feed hole geometric center peak electric field place farthest, and this position is apart from the distance R of chamber central _sdetermined by following formula:

$R_S=\frac{p_{max1}}{p_{21}}\×a_{eff}---\left(7\right)$

Wherein, p _max1the argument value that second order Bessel's function is corresponding when getting first maximum value, namely 3.056, p ₂₁first zero point of second order Bessel's function, namely 5.136.

4. the material method for measuring complex dielectric constant based on substrate integration wave-guide circular resonant chamber according to claim 1, is characterized in that, the volume V in substrate integration wave-guide circular resonant chamber _cwith the volume V of test sample loading hole (6) _sratio should be arranged between 200 ~ 400.