CN103896207B - A kind of carbon nano pipe array bonding method based on power electro thermal coupling - Google Patents
A kind of carbon nano pipe array bonding method based on power electro thermal coupling Download PDFInfo
- Publication number
- CN103896207B CN103896207B CN201410145675.5A CN201410145675A CN103896207B CN 103896207 B CN103896207 B CN 103896207B CN 201410145675 A CN201410145675 A CN 201410145675A CN 103896207 B CN103896207 B CN 103896207B
- Authority
- CN
- China
- Prior art keywords
- carbon nano
- pipe array
- nano pipe
- method based
- thermal coupling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Carbon And Carbon Compounds (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
The invention provides a kind of carbon nano pipe array bonding method based on power electro thermal coupling, first utilize chemical gaseous phase depositing process in metal substrate surface carbon nano tube array grows, then nano particle is formed at carbon nano tube surface splash-proofing sputtering metal, after aiming at metal target substrate, apply certain pressure and environment temperature, constant-current pulse power supply is connected between two metallic substrates, energising continues for some time rear deenergization, keep certain hour again, the bonding of carbon nano pipe array and metallic substrates can be realized.The present invention is based on and gather and electromigration effect at the electric current at nano-contact interface, produce local joule heat, promote to spread between atom, realize low-temperature bonding, simple to operate, compatible with microelectronic technique, be with a wide range of applications at carbon nano tube device and Electronic Packaging thermal interfacial material field.
Description
Technical field
The invention belongs to micro-nano system and manufacture field, particularly relate to a kind of carbon nano pipe array bonding method based on power electro thermal coupling.
Background technology
CNT, as the Typical Representative of nano structural material, becomes the critical material that nanometer electronic device of new generation manufactures with performances such as its peculiar nanoscale one-dimentional structure characteristic and significant machinery, electricity, calorifics, optics, biologies.Electronic circuit manufacturing technology based on CNT will contribute to the nanometer electronic device realizing more small scale, more high-performance, more low-power consumption.Meanwhile, the CNT with high heat conductance and high conductivity also becomes the important materials improving device package performance, for improving heat radiation and the electric conductivity of encapsulation.Using the sensitive material of CNT as sensor, greatly can expand the function of sensor, performance is improved further.For these application of CNT, its basic version mainly forms horizontal or vertical interconnection structure between CNT and metal electrode.In such an embodiment, the Main Function of CNT forms electricity, heat transfer channel, or as the functional material of power conversion, electrode structure becomes the communications intermediary of CNT and macroscopic measurement system.Such as: carbon nano pipe array is assembled to the electrical interconnection, the FET raceway groove that electrode are used for large scale integrated circuit, or the carbon nano-tube film of oriented growth is filled to interconnected interface as encapsulation thermal interfacial material, with realize heat fast transport.
Prepare vertical orientation carbon nano pipe array based on chemical vapor deposition (CVD) method, and for electrical interconnection medium and hot interface (TIM) material, be the common type of CNT application, its core feature to form metal-carbon pipe-metal three-decker.The main bonding adopting thermocompression bonding method or chemical adhesion method to realize carbon nano-tube film and metallic substrates at present, the subject matter that the former exists is that bonding temperature and pressure are all higher, generally more than 300 DEG C, can affect device performance in the application; The latter utilizes and independently fills the chemical substance realization of close metal and the bonding of metallic substrates in carbon nano tube surface, the subject matter existed introduces organic chemicals in bonding process, certain pollution is caused to environment and device, and the connection that chemical bonding is formed built on the sand, be difficult to ensure efficient power, electricity, heat interconnection.
Given this, by preparing nanometer metal structure in carbon nano tube surface, and it can be used as bonded layer, under uniform temperature and pressure effect, and constant-current pulse power supply is connected between two metallic substrates, utilize and gather and electromigration effect at the electric current at nano-contact interface, produce local joule heat, promote to spread between atom, realize low-temperature bonding.The method is simple to operate, compatible with microelectronic technique, is with a wide range of applications at carbon nano tube device and Electronic Packaging thermal interfacial material field.
Summary of the invention
The object of the present invention is to provide a kind of carbon nano pipe array bonding method based on power electro thermal coupling, nano metal layer is prepared as bonded layer in carbon nano tube surface, gather and electromigration effect at the electric current that nano-interface produces based on applied pulse current, realize the bonding of CNT and metallic substrates.
A kind of carbon nano pipe array bonding method based on power electro thermal coupling that the present invention announces, the carbon nano pipe array end splash-proofing sputtering metal grown on the metallic substrate forms nano particle, after aiming at metal target substrate, apply certain pressure and environment temperature, constant-current pulse power supply is connected between two metallic substrates, energising continues for some time rear deenergization, then keeps constant temperature and constant voltage certain hour, can realize the bonding of carbon nano pipe array and metallic substrates.
The electric current that the present invention is based on nano-contact interface gathers and electromigration effect, produces local joule heat, cause interface metal local melting at contact interface; Meanwhile, nano-interface electromigration effect can promote to spread between atom, the environment temperature in addition applied and pressure, produces the comprehensive effect of power electro thermal coupling, realizes low-temperature bonding.The method is simple to operate, compatible with microelectronic technique, is with a wide range of applications at carbon nano tube device and Electronic Packaging thermal interfacial material field.
Accompanying drawing explanation
Fig. 1 be vertical carbon nanotube array of the present invention to metallic substrates bonding technology schematic diagram: wherein 1 for vertical carbon nanotube array, and 2 metal levels, 3 is silicon substrate, and 4 is nano-metal particle, and 5 is pressure, and 6 is metallic substrates, and 7 is device substrate.
Detailed description of the invention
As shown in Figure 1, the key step of the specific embodiment of the invention comprises:
(1) CVD method is adopted to prepare vertical carbon nanotube array.Growth apparatus adopts " BlackMagic " system of German AIXTRON company, in CNT synthesis, underlayer temperature is between 450 DEG C to 560 DEG C, catalyst adopts Al/Fe/Mo metal, first splash-proofing sputtering metal layer on a silicon substrate, the nanocluster of catalyst can be formed on substrate, so that growing oriented carbon nano pipe array through overheated shaping.In growth, origin adopts C
2h
2gas, first in hot environment, gas cracking is generated C by (830 DEG C)
6h
9, C
5h
9deng gas, by lysate, the substrate passed into catalyst gets final product carbon nano-tube.In growth course, chamber pressure is 2 × 10
2mbar.
(2) carbon nano pipe array end nano-metal particle preparation.Utilize magnetron sputtering coater at vertical orientation carbon nano tube surface sputtering Ni metal.In sputtering, cavity air pressure is 5 × 10
3pa, underlayer temperature is 350K, and sputtering time is 10 minutes.
(3) based on the thermocompression bonding technique of power electro thermal coupling.By the structure that (2) are formed, through aligning, nano particle is contacted with the metal substrate that diverts the aim (Au), 2MPa pressure is applied between 3 and 7, environment temperature is 150 degrees Celsius, 2 and and connect constant-current pulse power supply between 6, current amplitude 10 amperes, pulsewidth 100 milliseconds, frequency 5000 hertz, 150 seconds conduction time.
(4) bonding completes.After step (3) completes, keep constant temperature and pressure 30 minutes, namely complete bonding technology.
Claims (3)
1. the carbon nano pipe array bonding method based on power electro thermal coupling, it is characterized in that the carbon nano pipe array end splash-proofing sputtering metal grown on the metallic substrate forms nano particle, after aiming at metal target substrate, apply certain pressure and environment temperature, constant-current pulse power supply is connected between two metallic substrates, energising continues for some time rear deenergization, then keeps constant temperature and constant voltage certain hour.
2. a kind of carbon nano pipe array bonding method based on power electro thermal coupling as claimed in claim 1, is characterized in that applied pressure 1-5MPa, temperature 100-200 DEG C, constant temperature and pressure duration 20-40 minute.
3. a kind of carbon nano pipe array bonding method based on power electro thermal coupling as claimed in claim 1, it is characterized in that constant-current pulse source current amplitude is less than 100 amperes, pulsewidth 50-150 millisecond, frequency is greater than 50 hertz, 30-300 second conduction time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410145675.5A CN103896207B (en) | 2014-04-14 | 2014-04-14 | A kind of carbon nano pipe array bonding method based on power electro thermal coupling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410145675.5A CN103896207B (en) | 2014-04-14 | 2014-04-14 | A kind of carbon nano pipe array bonding method based on power electro thermal coupling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103896207A CN103896207A (en) | 2014-07-02 |
| CN103896207B true CN103896207B (en) | 2015-11-18 |
Family
ID=50987841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410145675.5A Expired - Fee Related CN103896207B (en) | 2014-04-14 | 2014-04-14 | A kind of carbon nano pipe array bonding method based on power electro thermal coupling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103896207B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591837A (en) * | 2016-11-28 | 2017-04-26 | 上海无线电设备研究所 | Vertical carbon nanofiber array transferring method |
| CN106653629B (en) * | 2016-11-29 | 2019-01-29 | 河南省科学院应用物理研究所有限公司 | A method of it reducing micro-system metal interface and encapsulates bonding defects |
| CN108258263B (en) * | 2018-01-10 | 2020-04-24 | 哈尔滨工业大学 | Low temperature sealing method for solid oxide fuel cell |
| CN115784390B (en) * | 2022-11-10 | 2024-05-07 | 重庆大学 | Photo-thermal evaporation coupling capacitor deionized sea water desalting device and method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6989325B2 (en) * | 2003-09-03 | 2006-01-24 | Industrial Technology Research Institute | Self-assembled nanometer conductive bumps and method for fabricating |
| CN1775656A (en) * | 2004-04-01 | 2006-05-24 | 朗迅科技公司 | Interconnection of high-density nano structure |
| TWI283917B (en) * | 2001-06-06 | 2007-07-11 | Infineon Technologies Ag | Electronic chip and electronic chip arrangement |
| CN101317255A (en) * | 2005-12-22 | 2008-12-03 | 英特尔公司 | Nanostructure-based package interconnect |
| CN101609802A (en) * | 2009-06-23 | 2009-12-23 | 华中科技大学 | A kind of preparation method of low thermal resistance thermal interface |
| CN101870446A (en) * | 2010-06-30 | 2010-10-27 | 上海交通大学 | Multichannel carbon nanotube sensor and preparation method thereof |
| JP4720807B2 (en) * | 2007-09-19 | 2011-07-13 | 株式会社デンソー | Electronic equipment |
| CN102169838A (en) * | 2011-03-15 | 2011-08-31 | 上海大学 | Manufacturing method of carbon nano-tube micro-channel cooler system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006068082A1 (en) * | 2004-12-22 | 2006-06-29 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
| US8262835B2 (en) * | 2007-12-19 | 2012-09-11 | Purdue Research Foundation | Method of bonding carbon nanotubes |
-
2014
- 2014-04-14 CN CN201410145675.5A patent/CN103896207B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI283917B (en) * | 2001-06-06 | 2007-07-11 | Infineon Technologies Ag | Electronic chip and electronic chip arrangement |
| US6989325B2 (en) * | 2003-09-03 | 2006-01-24 | Industrial Technology Research Institute | Self-assembled nanometer conductive bumps and method for fabricating |
| CN1775656A (en) * | 2004-04-01 | 2006-05-24 | 朗迅科技公司 | Interconnection of high-density nano structure |
| CN101317255A (en) * | 2005-12-22 | 2008-12-03 | 英特尔公司 | Nanostructure-based package interconnect |
| JP4720807B2 (en) * | 2007-09-19 | 2011-07-13 | 株式会社デンソー | Electronic equipment |
| CN101609802A (en) * | 2009-06-23 | 2009-12-23 | 华中科技大学 | A kind of preparation method of low thermal resistance thermal interface |
| CN101870446A (en) * | 2010-06-30 | 2010-10-27 | 上海交通大学 | Multichannel carbon nanotube sensor and preparation method thereof |
| CN102169838A (en) * | 2011-03-15 | 2011-08-31 | 上海大学 | Manufacturing method of carbon nano-tube micro-channel cooler system |
Non-Patent Citations (1)
| Title |
|---|
| "碳纳米管/金属界面键合机制及其相关技术研究";宋晓辉;《中国博士学位论文全文数据库》;20101015(第10期);第100-108页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103896207A (en) | 2014-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103896207B (en) | A kind of carbon nano pipe array bonding method based on power electro thermal coupling | |
| CN103325935B (en) | A kind of flexible thin film thermobattery and preparation method thereof | |
| CN103183344B (en) | A kind of efficient cryogenic prepares the method for big size graphene | |
| CN102244051B (en) | High-performance directional heat conduction copper-base diamond composite material and preparation method thereof | |
| Zhang et al. | Shape and doping enhanced field emission properties of quasialigned 3 C-SiC nanowires | |
| WO2011057105A3 (en) | Materials and methods for thermal and electrical conductivity | |
| CN104532206A (en) | Preparation method of graphene doped film growing on insulating substrate in in-situ growth mode | |
| CN103922316B (en) | Spumescence carbon nano-tube material, preparation method, radiator structure and measuring method | |
| CN105870314B (en) | A kind of flexible silicon based nano film thermo-electric device | |
| Sibiński et al. | Comparison of ZnO: Al, ITO and carbon nanotube transparent conductive layers in flexible solar cells applications | |
| CN107204282A (en) | A kind of method based on non-self-supporting GaN to being sticked with standby Buddha's warrior attendant ground mass GaN | |
| CN103194795A (en) | Method for low-cost preparation of large-size monocrystal graphene | |
| CN105470218A (en) | Integration of backside heat spreader for thermal management | |
| CN104229729A (en) | Method for transferring carbon nanotube vertical array to flexible polymer substrate | |
| Shan et al. | Enhancing the heat-dissipation efficiency in ultrasonic transducers via embedding vertically oriented graphene-based porcelain radiators | |
| Wang et al. | Manipulating growth of thermoelectric Bi2Te3/Sb multilayered nanowire arrays | |
| CN103928358A (en) | Method for transferring vertical carbon nano tube array to metal substrate | |
| Li et al. | Lattice vibration properties of MoS2/PtSe2 heterostructures | |
| CN103641079A (en) | Preparation method for large-size ultrathin bismuth selenide nanosheet | |
| CN103928359B (en) | A kind of method that vertical carbon nanotube array is bonded with metallic substrates | |
| CN108997983A (en) | The preparation method and application of three-dimensional drape shape graphene heat dissipation slurry | |
| CN102502604A (en) | Preparation method of multifunctional graphene tube | |
| Yang et al. | High‐Performance Electrothermal Film Based on Laser‐Induced Graphene | |
| CN103183336A (en) | Preparation method of large-area graphene on Si substrate based on Ni film annealing | |
| CN213546354U (en) | DBC ceramic substrate with stress relaxation and thermoelectric device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151118 Termination date: 20200414 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |