CN103896207A - Carbon nano-tube array bonding method based on force-electric thermal coupling - Google Patents
Carbon nano-tube array bonding method based on force-electric thermal coupling Download PDFInfo
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- CN103896207A CN103896207A CN201410145675.5A CN201410145675A CN103896207A CN 103896207 A CN103896207 A CN 103896207A CN 201410145675 A CN201410145675 A CN 201410145675A CN 103896207 A CN103896207 A CN 103896207A
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Abstract
The invention provides a carbon nano-tube array bonding method based on force-electric thermal coupling. The carbon nano-tube array bonding method comprises the following steps of growing a carbon nano-tube array on the surface of a metal substrate by utilizing a chemical vapor deposition method firstly, then sputtering metal on the surface of each carbon nano-tube to form nano-particles, after aligning the metal substrate to a target metal substrate, applying certain pressure at certain environmental temperature, connecting a constant-current pulsed power supply between the two metal substrates, disconnecting the power supply after electrifying for a period of time, and then keeping for a certain time, thus bonding the carbon nano-tube array with the metal substrates. With the adoption of the carbon nano-tube array bonding method, based on the current crowding and electromigration effects of a nanometer contact interface, local joule heat is generated, diffusion among atoms is promoted, low-temperature bonding is realized, and the operation is simple; as being compatible with the microelectronics technology, the carbon nano-tube array bonding method has wide application prospect in the field of nano-tube devices and electronic packaging thermal interface materials.
Description
Technical field
The invention belongs to micro-nano system and manufacture field, particularly relate to a kind of carbon nano pipe array bonding method based on power electro thermal coupling.
Background technology
CNT is as the Typical Representative of nano structural material, becomes the critical material of nanometer electronic device manufacture of new generation with performances such as its peculiar nanoscale one-dimentional structure characteristic and significant machinery, electricity, calorifics, optics, biologies.Electronic circuit manufacturing technology based on CNT will contribute to realize more small scale, more high-performance, the nanometer electronic device of low-power consumption more.Meanwhile, the CNT with high heat conductance and high conductivity also becomes the important materials that improves device package performance, for improving heat radiation and the electric conductivity of encapsulation.Sensitive material using CNT as sensor, can expand the function of sensor greatly, and performance is further improved.For these application of CNT, its basic version is mainly between CNT and metal electrode, to form horizontal or vertical interconnection structure.In this structure, the Main Function of CNT is to form electricity, heat transfer channel, or as the functional material of power conversion, electrode structure becomes the communications intermediary of CNT and macroscopic measurement system.Such as: carbon nano pipe array is assembled to the electrical interconnection for large scale integrated circuit on electrode, FET raceway groove, or the carbon nano-tube film of oriented growth is filled to interconnected interface as encapsulation thermal interfacial material, to realize transporting fast of heat.
Prepare vertical orientation carbon nano pipe array based on chemical vapor deposition (CVD) method, and for electrical interconnection medium and hot interface (TIM) material, be the common type of CNT application, its core feature is to form metal-carbon nanotube-metal three-decker.The main bonding that adopts thermocompression bonding method or chemical adhesion method to realize carbon nano-tube film and metallic substrates at present, the subject matter that the former exists is that bonding temperature and pressure are all higher, generally, more than 300 ℃, in application, can affect device performance; The latter utilizes in carbon nano tube surface and independently fills the chemical substance realization of close metal and the bonding of metallic substrates, the subject matter existing is in bonding process, to introduce organic chemicals, environment and device are caused to certain pollution, and the connection that chemical bonding forms built on the sand, be difficult to guarantee efficient power, electricity, heat interconnection.
Given this, by preparing nanometer metal structure in carbon nano tube surface, and set it as bonded layer, under uniform temperature and pressure-acting, and between two metallic substrates, connect constant-current pulse power supply, and utilize and gather and electromigration effect at the electric current of nanometer contact interface, produce local joule heat, promote to spread between atom, realize low-temperature bonding.The method is simple to operate, with microelectronic technique compatibility, is with a wide range of applications at carbon nano tube device and Electronic Packaging thermal interfacial material field.
Summary of the invention
The object of the present invention is to provide a kind of carbon nano pipe array bonding method based on power electro thermal coupling, prepare nano metal layer as bonded layer in carbon nano tube surface, the electric current producing at nano-interface based on applied pulse current gathers and electromigration effect, realizes the bonding of CNT and metallic substrates.
A kind of carbon nano pipe array bonding method based on power electro thermal coupling that the present invention announces, the carbon nano pipe array end splash-proofing sputtering metal of growing in metallic substrates forms nano particle, after aiming at metal target substrate, apply certain pressure and environment temperature, between two metallic substrates, connect constant-current pulse power supply, energising continues for some time rear deenergization, then keeps constant temperature and constant voltage certain hour, can realize the bonding of carbon nano pipe array and metallic substrates.
The electric current that the present invention is based on nanometer contact interface gathers and electromigration effect, produces local joule heat at contact interface, causes interface metal local melting; Meanwhile, nano-interface electromigration effect can promote to spread between atom, the environment temperature in addition applying and pressure, and the comprehensive effect of generation power electro thermal coupling, realizes low-temperature bonding.The method is simple to operate, with microelectronic technique compatibility, is with a wide range of applications at carbon nano tube device and Electronic Packaging thermal interfacial material field.
Accompanying drawing explanation
Fig. 1 is vertical carbon nanotube array of the present invention to metallic substrates bonding technology schematic diagram: wherein 1 is vertical carbon nanotube array, 2 metal levels, and 3 is silicon substrate, and 4 is nano-metal particle, and 5 is pressure, and 6 is metallic substrates, 7 is device substrate.
The specific embodiment
As shown in Figure 1, the key step of the specific embodiment of the invention comprises:
(1) adopt CVD method to prepare vertical carbon nanotube array.Growth apparatus adopts " Black Magic " system of German AIXTRON company, during CNT is synthetic, underlayer temperature is between 450 ℃ to 560 ℃, catalyst adopts Al/Fe/Mo metal, first splash-proofing sputtering metal layer on silicon substrate, can on substrate, form the nanocluster of catalyst through overheated shaping, so that growing oriented carbon nano pipe array.In growth, origin adopts C
2h
2gas, first in hot environment, gas cracking is generated C by (830 ℃)
6h
9, C
5h
9deng gas, lysate is passed into the substrate of catalyst and gets final product carbon nano-tube.In growth course, chamber pressure is 2 × 10
2mbar.
(2) carbon nano pipe array end nano-metal particle preparation.Utilize magnetron sputtering coater at vertical orientation carbon nano tube surface sputter Ni metal.In sputter, cavity air pressure is 5 × 10
3pa, underlayer temperature is 350K, sputtering time is 10 minutes.
(3) the thermocompression bonding technique based on power electro thermal coupling.The structure that (2) are formed, through aiming at, nano particle is contacted with the metal substrate that diverts the aim (Au), between 3 and 7, apply 2MPa pressure, environment temperature is 150 degrees Celsius, 2 and and between 6, connect constant-current pulse power supply, 10 amperes of current amplitudes, 100 milliseconds of pulsewidths, 5000 hertz of frequencies, 150 seconds conduction time.
(4) bonding completes.After step (3) completes, keep constant temperature and pressure 30 minutes, complete bonding technology.
Claims (3)
1. the carbon nano pipe array bonding method based on power electro thermal coupling, it is characterized in that the carbon nano pipe array end splash-proofing sputtering metal of growing forms nano particle in metallic substrates, after aiming at metal target substrate, apply certain pressure and environment temperature, between two metallic substrates, connect constant-current pulse power supply, energising continues for some time rear deenergization, then keeps constant temperature and constant voltage certain hour.
2. a kind of carbon nano pipe array bonding method based on power electro thermal coupling as claimed in claim 1, is characterized in that applied pressure 1-5MPa, temperature 100-200 ℃, constant temperature and pressure duration 20-40 minute.
3. a kind of carbon nano pipe array bonding method based on power electro thermal coupling as claimed in claim 1, is characterized in that constant-current pulse source current amplitude is less than 100 amperes, pulsewidth 50-150 millisecond, and frequency is greater than 50 hertz, 30-300 second conduction time.
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| CN103896207B CN103896207B (en) | 2015-11-18 |
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| CN108258263A (en) * | 2018-01-10 | 2018-07-06 | 哈尔滨工业大学 | For the low-temperature sealing structure and its method for sealing of solid oxide fuel cell |
| CN115784390A (en) * | 2022-11-10 | 2023-03-14 | 重庆大学 | Photo-thermal evaporation coupling capacitance deionization seawater desalination device and method |
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| CN115784390B (en) * | 2022-11-10 | 2024-05-07 | 重庆大学 | Photo-thermal evaporation coupling capacitor deionized sea water desalting device and method |
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