CN103887348A - HIT solar cell electrode and manufacturing method thereof - Google Patents
HIT solar cell electrode and manufacturing method thereof Download PDFInfo
- Publication number
- CN103887348A CN103887348A CN201310645894.5A CN201310645894A CN103887348A CN 103887348 A CN103887348 A CN 103887348A CN 201310645894 A CN201310645894 A CN 201310645894A CN 103887348 A CN103887348 A CN 103887348A
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- electrode
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- hit
- hit solar
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000005491 wire drawing Methods 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000003292 glue Substances 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000006258 conductive agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to an HIT solar cell electrode and a manufacturing method thereof. The HIT solar cell electrode is characterized in that an HIT cell grid wire electrode is composed of a series of conductive metal wires which are arranged in parallel. Before the metal wires cover the surface of a cell, a certain amount of conductive resin is coated on the metal wires according to certain spacing distance, then the metal wires are drawn to the position above the surface of the cell to adhere and cover via a wire-drawing device so that wire covering is completed; after that, the conductive resin and the cell are solidified in the subsequent heat treatment process and great contact is formed so that contact between the metal wires and the cell is also completed simultaneously. With adoption of the aforementioned manufacturing method, shading loss of the HIT cell grid wire electrode is reduced, and effective injection of light is increased so that conversion efficiency of the cell can be enhanced. Meanwhile, use amount of the expensive conductive resin is substantially reduced by the manufacturing method, manufacturing cost of the HIT cell is greatly reduced and yield rate of the HIT cell is enhanced.
Description
Technical field
The invention belongs to technical field of solar cells, relate to a kind of solar cel electrode, especially a kind of HIT solar cel electrode and preparation method thereof.
Background technology
At present, HIT solar cell is the very competitive new and effective solar cell of one, and its electrode production process mainly adopts silk-screen printing technique, and its production process is: silk screen printing surface gate line electrode, oven dry.
Due to the restriction of silk screen printing self technology, be difficult to continue to reduce at present the width of surperficial gate line electrode, thereby reduce the shading loss of surperficial gate line electrode, and then improve conversion efficiency.In addition, adopt silk-screen printing technique, occur such as disconnected grid unavoidably, bite, leak the abnormal problems of production such as glue, also reduced the rate of finished products of battery.
Simultaneously, along with solar cell silicon cost continue drop, in battery cost, especially the shared proportion of conducting resinl cost is more and more higher for non-silicon cost, increasingly become the obstacle that further reduction HIT battery manufacture cost and even this technology are further promoted, therefore, the consumption of reduction conducting resinl is also a kind of effectively solution route.
Summary of the invention
The object of the invention is to overcome the shortcoming of above-mentioned prior art, a kind of HIT solar cel electrode and preparation method thereof is provided, the method can significantly reduce the consumption of expensive conductive agent, reduces HIT solar cell production cost; Meanwhile, also can reduce grid line width, increase grid line height, improve the depth-width ratio of positive electrode grid line, reduce series resistance, dwindle shading-area, increase short circuit current, eliminate the printing defects such as disconnected grid, thereby improve HIT solar cell conversion efficiency and rate of finished products.
To achieve these goals, the present invention adopts following technical scheme:
A kind of manufacture method that can improve HIT solar cell conversion efficiency and reduce the electrode of its production cost, it is characterized in that being made up of the wire being arranged in parallel at HIT solar battery surface gate line electrode, contacting by the point-like conducting resinl of a series of interruptions between every one metal wire and battery surface realizes.
In such scheme, the gate line electrode of HIT battery is made up of the wire of 0.01-0.1mm diameter, and the collection that completes electric current is derived.
In such scheme, wire is realized with contacting by the point-like conducting resinl of a series of interruptions of battery surface.
In such scheme, before wire overlays on battery surface, first need to according to a determining deviation by a certain amount of conducting resinl apposition on wire, then by wire-drawing frame, wire is pulled to battery surface top, after completing and covering silk, conducting resinl and battery solidify and form good contact in follow-up heat treatment process, so contacting also between wire and battery completes simultaneously.
In such scheme, form the conventional conducting resinl that contact point conductive adhesive therewith is suitable for for HIT solar cell, as conductive silver glue, copper glue, nickel glue etc.
In such scheme, adhesive dots area is 0.01-0.1mm2.
In such scheme, the required temperature <300 DEG C of heat treatment process wherein, consistent with the low temperature heat-treatment process that conventional H IT solar cel electrode preparation technology is used.
In such scheme, the wire cross section that forms surperficial gate line electrode is quasi-circular, and surface wiry can reenter silicon chip by reflecting part sunlight, has increased the effective absorption to sunlight, increases short circuit current, improves conversion efficiency.
In such scheme, its exemplary production process can be divided into two kinds, and concrete technology step is as follows: (1) silk screen printing surface main grid electrode, and glue is applied in wire drawing, covers silk, dries; (2) glue is applied in wire drawing, covers silk, dries.
In such scheme, the design of new positive electrode, because thinner gate line electrode has reduced the shading loss that gate line electrode brings, reduce the consumption of expensive conducting resinl, in the process of wire drawing, complete deposited glue simultaneously, when lifting conversion efficiency reduces production costs, simplified technical process simultaneously.
Compared with prior art, the present invention has following beneficial effect:
(1) the present invention adopts wire to obtain gate line electrode as gate line electrode replacement is existing by silk-screen printing technique, wherein diameter wiry is 0.01-0.1mm, and the width of the gate line electrode that silk-screen obtains is between 0.08-0.12mm, therefore the present invention can reduce the shading loss of positive electrode significantly, and then effective absorption of increase light, the conversion efficiency of lifting battery.
(2) the present invention adopts wire to obtain gate line electrode as gate line electrode replacement is existing by silk screen printing conducting resinl, has therefore reduced the consumption of expensive conducting resinl, has reduced significantly production cost.
Brief description of the drawings
Fig. 1 is appearance structural representation in embodiment 1 in employing the present invention;
Fig. 2 is outward appearance structural representation in embodiment 2 in employing the present invention;
Wherein: 1 is silicon chip; 2 is gate line electrode; 3 is contact point; 4 is convergent belt.
Embodiment
HIT solar cell positive electrode of the present invention, the main grid electrode being obtained by silk screen printing and the gate line electrode 2 being made up of wire form, and main grid electrode is vertical with gate line electrode, and the conductive wire that described gate line electrode 2 is less than 0.1mm by diameter is arranged in parallel and forms.Described conductive wire is realized with contacting by the point-like conducting resinl of a series of interruptions of battery surface.Described wire is that diameter is the plain conductor of 0.01-0.1mm.The manufacture method of this kind of HIT solar cel electrode, comprises the following steps:
1) first make nesa coating;
2) print main grid electrode by the technique of silk screen printing at battery surface;
3) then arrange parallel conductive wire on the surface of battery: conducting resinl apposition, on wire, is then pulled to battery surface top by wire-drawing frame by wire, completes and cover silk; Adhesive dots area is 0.01-0.1mm
2.
4) finally heat-treat, make conducting resinl and battery surface form good contact, obtain HIT solar cel electrode.The temperature <300 DEG C that heat treatment process is required.
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
Embodiment 1
Be made up of a HIT solar cell for surperficial gate line electrode wire, the main grid electrode that the electrode of this solar cell is obtained by silk screen printing forms with the gate line electrode being made up of wire, and electrode surface structure as shown in Figure 1.In production process, need to be according to actual conditions, the parameters such as the conductivity of the conductivity of reference battery surface nesa coating, shading-area, electrode design the quantity of wire gate line electrode.Fig. 1 is only for example explanation.
The common process of this battery Qian road technique and HIT solar cell is in full accord, after the surperficial nesa coating of battery completes, first print main grid electrode by the technique of silk screen printing at battery surface, next is that glue step is applied in wire drawing, then arrange parallel wire on the surface of battery, finally in heat treatment process, conducting resinl and battery surface form good contact, so contact also corresponding completing between wire and battery surface, having realized can be by the collection export function of photogenerated current.
Embodiment 2
A HIT solar cell that is formed surperficial gate line electrode by wire, the surface electrode of this solar cell has been cancelled main grid electrode, and the gate line electrode being all made up of wire forms, and surface electrode surface structure is as shown in Figure 2.In production process, need to be according to actual conditions, design the quantity of wire gate line electrode with reference to parameters such as the conductivity of the conductivity of nesa coating, shading-area, electrode.Fig. 2 is only for example explanation.
The common process of this battery Qian road technique and HIT solar cell is in full accord, after the back electrode printing of battery has been dried, first be that glue step is applied in wire drawing, then arrange parallel wire on the surface of battery, finally in drying course, conducting resinl and battery surface form good contact, so contact also corresponding completing between wire and battery surface face, having realized can be by the collection export function of photogenerated current.
Be the convergent belt that wire gate line electrode exit welds together at the two ends of HIT battery, convergent belt is conductive metal band, in the time that another piece monomer HIT battery is coupled, only the back electrode of another piece monomer HIT battery need be welded with it.
The technical scheme above the invention process being provided is described in detail, for one of ordinary skill in the art, according to the embodiment of the present invention, in embodiment and range of application, all will change, in sum, this description should not be construed as limitation of the present invention.
Claims (6)
1. a HIT solar cell positive electrode, it is characterized in that, the main grid electrode being obtained by silk screen printing and the gate line electrode (2) being made up of wire form, and main grid electrode is vertical with gate line electrode, and the conductive wire that described gate line electrode (2) is less than 0.1mm by diameter is arranged in parallel and forms.
2. HIT solar cel electrode according to claim 1, is characterized in that, described conductive wire is realized with contacting by the point-like conducting resinl of a series of interruptions of battery surface.
3. HIT solar cel electrode according to claim 1, is characterized in that, described wire is that diameter is the plain conductor of 0.01-0.1mm.
4. a manufacture method for HIT solar cel electrode, is characterized in that, comprises the following steps:
1) first make nesa coating;
2) print main grid electrode by the technique of silk screen printing at battery surface;
3) then arrange parallel conductive wire on the surface of battery: by conducting resinl apposition on wire,, then by wire-drawing frame, wire is pulled to battery surface top, complete and cover silk;
4) finally heat-treat, make conducting resinl and battery surface form good contact, obtain HIT solar cel electrode.
5. the manufacture method of HIT solar cel electrode according to claim 4, is characterized in that, in step 3), adhesive dots area is 0.01-0.1mm
2.
6. the manufacture method of HIT solar cel electrode according to claim 4, is characterized in that, in step 4), and the temperature <300 DEG C that heat treatment process is required.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310645894.5A CN103887348A (en) | 2014-04-22 | 2014-04-22 | HIT solar cell electrode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310645894.5A CN103887348A (en) | 2014-04-22 | 2014-04-22 | HIT solar cell electrode and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN103887348A true CN103887348A (en) | 2014-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310645894.5A Pending CN103887348A (en) | 2014-04-22 | 2014-04-22 | HIT solar cell electrode and manufacturing method thereof |
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| Country | Link |
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| CN (1) | CN103887348A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600134A (en) * | 2014-12-30 | 2015-05-06 | 南京日托光伏科技有限公司 | Solar cell and preparation method thereof |
| CN105702759A (en) * | 2016-04-28 | 2016-06-22 | 泰州乐叶光伏科技有限公司 | Main grid electrode structure of solar cell and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1150338A (en) * | 1994-05-19 | 1997-05-21 | 佳能株式会社 | Photovoltaic element, electrode structure thereof, and process for producing the same |
| CN1953211A (en) * | 2005-10-18 | 2007-04-25 | 上海太阳能科技有限公司 | Silicon solar cell electrode and its manufacture method |
| CN101483199A (en) * | 2009-02-23 | 2009-07-15 | 珈伟太阳能(武汉)有限公司 | Electrode construction for enhancing photoelectric transforming efficiency of silicon solar cell |
| CN102185027A (en) * | 2011-04-06 | 2011-09-14 | 李卫卫 | Manufacturing process of positive electrode of solar battery |
| CN102214729A (en) * | 2010-04-09 | 2011-10-12 | 陕西众森电能科技有限公司 | Front electrode structure of solar battery and manufacturing method of front electrode structure |
| CN102683478A (en) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | Electrode structure on back of solar cell and manufacturing method thereof |
-
2014
- 2014-04-22 CN CN201310645894.5A patent/CN103887348A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1150338A (en) * | 1994-05-19 | 1997-05-21 | 佳能株式会社 | Photovoltaic element, electrode structure thereof, and process for producing the same |
| CN1953211A (en) * | 2005-10-18 | 2007-04-25 | 上海太阳能科技有限公司 | Silicon solar cell electrode and its manufacture method |
| CN101483199A (en) * | 2009-02-23 | 2009-07-15 | 珈伟太阳能(武汉)有限公司 | Electrode construction for enhancing photoelectric transforming efficiency of silicon solar cell |
| CN102214729A (en) * | 2010-04-09 | 2011-10-12 | 陕西众森电能科技有限公司 | Front electrode structure of solar battery and manufacturing method of front electrode structure |
| CN102683478A (en) * | 2011-03-18 | 2012-09-19 | 陕西众森电能科技有限公司 | Electrode structure on back of solar cell and manufacturing method thereof |
| CN102185027A (en) * | 2011-04-06 | 2011-09-14 | 李卫卫 | Manufacturing process of positive electrode of solar battery |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600134A (en) * | 2014-12-30 | 2015-05-06 | 南京日托光伏科技有限公司 | Solar cell and preparation method thereof |
| CN105702759A (en) * | 2016-04-28 | 2016-06-22 | 泰州乐叶光伏科技有限公司 | Main grid electrode structure of solar cell and preparation method thereof |
| CN105702759B (en) * | 2016-04-28 | 2018-03-09 | 泰州隆基乐叶光伏科技有限公司 | A kind of solar cell primary gate electrode structure and preparation method thereof |
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Application publication date: 20140625 |
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