CN103872104A - 一种tq-126三极管 - Google Patents

一种tq-126三极管 Download PDF

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Publication number
CN103872104A
CN103872104A CN201410088555.6A CN201410088555A CN103872104A CN 103872104 A CN103872104 A CN 103872104A CN 201410088555 A CN201410088555 A CN 201410088555A CN 103872104 A CN103872104 A CN 103872104A
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pin
triode
present
pins
interim
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CN201410088555.6A
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Inventor
赵常杰
邢阜东
潘莉
王立勇
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WEIFANG HUICHUAN ELECTRONIC CO Ltd
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WEIFANG HUICHUAN ELECTRONIC CO Ltd
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Priority to CN201410088555.6A priority Critical patent/CN103872104A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Attenuators (AREA)
  • Snaps, Bayonet Connections, Set Pins, And Snap Rings (AREA)
  • Braiding, Manufacturing Of Bobbin-Net Or Lace, And Manufacturing Of Nets By Knotting (AREA)

Abstract

本发明公开了一种TQ-126三极管,包括散热片、第一管脚、中间管脚和第二管脚,第一管脚、中间管脚和第二管脚的宽度为0.5mm,厚度为0.38-0.5mm,相邻两个管脚之间的距离为2.5mm,中间管脚的长度为4.8±0.05mm,采用以上结构以后,TQ-126形式的三极管就可以实现编带自动化插件,应用更广泛。

Description

一种TQ-126三极管
技术领域
本发明涉及一种三极管,具体地说,涉及一种TQ-126三极管,属于电子技术领域。
背景技术
目前,电子行业中,电路板电子元器件插件孔的直径为0.8mm,自动化插件所用三极管为TQ-92封装形式。TQ-126封装形式三极管的管脚宽度为0.72mm,厚0.5mm,在实际应用中,多采用手工进行插件操作,不能实现编带自动化插件,生产效率低,浪费大量的人力物力。
发明内容
本发明要解决的技术问题是针对以上不足,提供一种TQ-126三极管,可以实现将TQ-126三极管和TQ-92三极管统一排列,实现自动化编带插件。
为解决以上技术问题,本发明采用以下技术方案:一种TQ-126三极管,包括散热片、第一管脚、中间管脚和第二管脚,其特征在于:所述第一管脚、中间管脚和第二管脚的宽度为0.5mm,厚度为0.38-0.5mm。
一种优化方案,所述相邻两个管脚之间的距离为2.5mm。
进一步地,所述中间管脚的长度为4.8±0.05 mm。
本发明采用以上技术方案后,与现有技术相比,具有以下优点:采用以上结构以后,TQ-126形式的三极管可以与TQ-92三极管统一排列,实现编带自动化插件,应用更广泛。
下面结合附图和实施例对本发明进行详细说明。
附图说明
附图1是本发明实施例中TQ-126三极管的结构示意图;
附图2是附图1的左视图;
图中,
1-散热片,2-第一管脚,3-中间管脚,4-第二管脚。
具体实施方式
本实施例是为了便于理解本发明,而不以任何方式限制本发明的权利要求和核心内容。
实施例,如图1、图2所示,一种TQ-126三极管,包括散热片1、第一管脚2、中间管脚3和第二管脚4,第一管脚2、中间管脚3和第二管脚4的宽度为0.5mm,厚度为0.38±0.01 mm,相邻两个管脚之间的距离为2.5mm,中间管脚3的长度为4.8±0.05 mm。
第一管脚2、中间管脚3和第二管脚4的厚度也可以为0.38-0.5mm之间的其它数值。
采用以上结构以后,TQ-126形式的三极管就可以实现编带自动化插件,应用更广泛。
以上所述为本发明最佳实施方式的举例,其中未详细述及的部分均为本领域普通技术人员的公知常识。本发明的保护范围以权利要求的内容为准,任何基于本发明的技术启示而进行的等效变换,也在本发明的保护范围之内。 

Claims (3)

1.一种TQ-126三极管,包括散热片(1)、第一管脚(2)、中间管脚(3)和第二管脚(4),其特征在于:所述第一管脚(2)、中间管脚(3)和第二管脚(4)的宽度为0.5mm,厚度为0.38-0.5mm。
2.如权利要求1所述的TQ-126三极管,其特征在于:所述相邻两个管脚之间的距离为2.5mm。
3.如权利要求1或2所述的TQ-126三极管,其特征在于:所述中间管脚(3)的长度为4.8±0.05 mm。
CN201410088555.6A 2014-03-12 2014-03-12 一种tq-126三极管 Pending CN103872104A (zh)

Priority Applications (1)

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CN201410088555.6A CN103872104A (zh) 2014-03-12 2014-03-12 一种tq-126三极管

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CN201410088555.6A CN103872104A (zh) 2014-03-12 2014-03-12 一种tq-126三极管

Publications (1)

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CN103872104A true CN103872104A (zh) 2014-06-18

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919375A (ja) * 1982-07-15 1984-01-31 ブラデイミル・アブラモビチ・スモリヤンスキ バイポ−ラ形四極半導体デバイス
CN102306637A (zh) * 2011-08-31 2012-01-04 昆山锦泰电子器材有限公司 带有三极管的组装散热片
CN102543932A (zh) * 2012-02-06 2012-07-04 深圳市晶导电子有限公司 半导体器件封装结构
CN203800055U (zh) * 2014-03-12 2014-08-27 潍坊市汇川电子有限公司 一种tq-126三极管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5919375A (ja) * 1982-07-15 1984-01-31 ブラデイミル・アブラモビチ・スモリヤンスキ バイポ−ラ形四極半導体デバイス
CN102306637A (zh) * 2011-08-31 2012-01-04 昆山锦泰电子器材有限公司 带有三极管的组装散热片
CN102543932A (zh) * 2012-02-06 2012-07-04 深圳市晶导电子有限公司 半导体器件封装结构
CN203800055U (zh) * 2014-03-12 2014-08-27 潍坊市汇川电子有限公司 一种tq-126三极管

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Application publication date: 20140618