CN103871940B - Oxidation furnace heat-preserving container and method for oxidation for semiconductor manufacturing - Google Patents
Oxidation furnace heat-preserving container and method for oxidation for semiconductor manufacturing Download PDFInfo
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- CN103871940B CN103871940B CN201410117707.0A CN201410117707A CN103871940B CN 103871940 B CN103871940 B CN 103871940B CN 201410117707 A CN201410117707 A CN 201410117707A CN 103871940 B CN103871940 B CN 103871940B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
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Abstract
The invention discloses a kind of oxidation furnace heat-preserving container for semiconductor manufacturing and method for oxidation, this heat-preserving container includes base, the limited post being fixed on base, the most a piece of fin, the limited post of this fin stops to prevent from dropping and parallel layers is laminated on base, has a gap between this fin.The heat-preserving container of the present invention has one or more pieces detachable fins, it is arranged on the base of heat-preserving container by pillar, the quantity of fin is adjusted according to different wet oxygen technological temperature demands, can effectively prevent the harmful effect that during low technological temperature, technique and device are produced by the globule of water vapour formation, avoid the damage that art and craft door seal member is caused by high technology temperature simultaneously.
Description
Technical field
The present invention relates to ic manufacturing technology field, particularly to a kind of oxidation furnace for quasiconductor heated oxide technique
Heat-preserving container and method for oxidation.
Background technology
Silicon chip is as a kind of important semi-conducting material, and its processed, especially oxidation processes are the most accurate a kind of technique.
At present, domestic and international commonly used vertical oxidation replaces horizontal type structure, realizes the oxidation technology of silicon chip.
Vertical oxidation uses the gas of top air inlet lower exhaust and supplies/discharge mode, gas exhaust piping in boiler tube bottom,
Close to art and craft door, in order to ensure good thermal field in technique, art and craft door top is equipped with heat-preserving container.Existing heat-preserving container is one
Formula structure, fin is non-dismountable.The Main Function of heat-preserving container includes: 1. prevent furnace interior heat to scatter and disappear；2. prevent high temperature
Art and craft door and neighbouring components and parts are caused damage by radiation.
As it is shown in figure 1, the heat-preserving container 4 in existing vertical oxidation is installed on the aqueous cold plate 3 of oxidation furnace bottom art and craft door,
Equipped with quartz boat 6 above heat-preserving container 4, it is used for carrying technique sheet 5.In order to improve the sealing of art and craft door, art and craft door fills
There are O (macromolecular material, not shown) and magnetic fluid 1 (be magnetic inside it suspension), but, the two
Parts have certain resistance to extreme temperature, and temperature is too high all can cause damage to parts, and therefore, typically meeting is in art and craft door and technique
It is provided with cooling water pipeline 2 bottom pipe, the recirculated cooling water of certain flow during technique, can be passed through.
When silicon chip carries out wet oxygen technique in oxidation furnace, main course of reaction includes H2+O2→H2O and Si+H2O→
SiO2+H2.In course of reaction, water vapour that is unnecessary or that have neither part nor lot in reaction can be discharged from gas exhaust piping with air-flow, if technique
Temperature is relatively low, produces the globule too much, and during technique drops boat after terminating, the globule will flow down from art and craft door, to art and craft door bottom
Cable and each components and parts cause damage；On the other hand, if technological temperature is higher, heat-preserving container thermal capacitance is less, at art and craft door
Temperature is too high, it is possible to cause sealing each parts thermal radiation on art and craft door and damaging.
Therefore, how to adjust the number of fins of heat-preserving container according to different wet oxygen process requirements (technological temperature), thus prevent
The harmful effect that technique and device are produced by the globule that low technological temperature is formed, avoids high technology temperature to art and craft door device simultaneously
Damage, be one of those skilled in the art's technical issues that need to address.
Summary of the invention
The present invention is to solve above-mentioned technical problem, and a kind of oxidation furnace heat-preserving container for semiconductor manufacturing and oxidation side are provided
Method, ensures temperature at art and craft door by increase and decrease heat-preserving container fin (FIN) quantity, water at low temperature devaporation can be avoided to produce
Unboiled water pearl, it is also possible to avoid high temperature heat radiation that art and craft door hermetic devices is caused damage.
The oxidation furnace heat-preserving container for semiconductor manufacturing of the present invention, it includes base, the limited post being fixed on base, number
Sheet fin, this limited post include at least three be located at base edge the pillar at this fin edge spacing and/or at least one set
On base and through the pillar in the hole preset on this fin, the limited post of this fin stops to prevent from dropping and parallel layers is laminated on
On base, the upper surface of this fin and/or lower surface have several contour protuberance, to be formed with neighbouring fin
Fixed interval (FI)；Wherein, heat-preserving container structure is assembled, and it has one or more pieces detachable fins, by according to not
Adjust the quantity of fin with wet oxygen technological temperature demand, make heat-preserving container thermal capacitance change, to change temperature at art and craft door.
Further, this limited post be at least three pillars and any two be respectively less than with the angle of base central point line
180°。
Further, this limited post is four pillars being uniformly distributed in base edge.
Further, this fin edge average mark is furnished with four grooves, these four pillars to arrange position relative with four grooves
Should, with spacing fin.
Further, this limited post include a pillar being located at base center and/or at least two be located at base edge
Pillar within position.
Further, a mask in the upper surface of this fin or lower surface has at least three protuberance, and any two is convex
The angle going out portion and fin central point line is respectively less than 180 °, so that the steady stacking of fin is placed.
Further, this fin edge and oxidation furnace inwall offset patch.
Further, this pillar has fixture, and supports downwards the fin of patch the top with the most spacing fin.
Further, this fin is 2-20 sheet, and is piezoid, and the gap between this fin is 10-20mm.
Further, this fin has the fins group being at least welded by two panels fin, in this fins group between fin
Gap is 10-20mm.
The present invention also provides for a kind of method utilizing above-mentioned oxidation furnace heat-preserving container oxidized silicon chip, and it comprises the following steps:
A. preset first temperature and the second temperature, and according to this first temperature or/and the second temperature determines the number of fin in heat-preserving container
Amount, at a temperature of first at this, is passed through hydrogen and oxygen, silicon chip is carried out wet oxygen technique 30-60 minute；
B. continue to be passed through hydrogen and oxygen, carry out wet oxygen technique 20-30 minute, and be warming up to the second temperature from this first temperature；
C. at a temperature of second at this, it is passed through hydrogen and oxygen, carries out wet oxygen technique 60-120 minute；
D., at this at a temperature of second, it is passed through nitrogen purging silicon chip.
Further, if this first temperature and the second temperature are all between 400-600 DEG C, then in heat-preserving container, number of fins adjusts
For 10-15 sheet；If this first temperature and the second temperature are all between 600-1000 DEG C, then in heat-preserving container, number of fins is adjusted to
15-20 sheet.
Further, step a, b and c are passed through the flow of hydrogen and oxygen be respectively 5500-6500SLM and
4000-5000SLM, the flow being passed through nitrogen in step d is 9000-11000SLM, this first temperature and the second temperature
The temperature difference is 50-150 DEG C, and in this method, oxidation furnace art and craft door and bottom of furnace body cooling water flow are 2-3L/min.
The oxidation furnace heat-preserving container for semiconductor manufacturing of present invention offer and method for oxidation, use assembled heat-preserving container structure,
It has one or more pieces detachable fins, is arranged on the base of heat-preserving container by pillar, according to different wet oxygen techniques
Temperature requirements adjusts the quantity of fin, causes the thermal capacitance of heat-preserving container to change, and at art and craft door, temperature changes therewith, to carry
The performance of high technology door；And the bad shadow that technique and device are produced by the globule that when effectively preventing low technological temperature, water vapour is formed
Ring, avoid the damage that art and craft door seal member is caused by high technology temperature simultaneously.
Accompanying drawing explanation
For becoming apparent from understanding the purpose of the present invention, feature and advantage, below with reference to accompanying drawing to presently preferred embodiments of the present invention
It is described in detail, wherein:
Fig. 1 is the structural representation of section components in existing oxidation furnace；
Fig. 2 is the axonometric chart of first embodiment of the invention heat-preserving container；
Fig. 3 is the top view of second embodiment of the invention heat-preserving container；
Fig. 4 is the top view of third embodiment of the invention heat-preserving container；
Fig. 5 is the top view of fourth embodiment of the invention heat-preserving container；
Fig. 6 is the top view of fifth embodiment of the invention heat-preserving container.
Detailed description of the invention
The heat-preserving container of the present invention for semiconductor manufacturing oxidation furnace bottom, it include base, the limited post being fixed on base,
Several pieces fins, this limited post includes that at least three are located at base edge the pillar at this fin edge spacing and/or at least one
Being located on base and pass the pillar in the hole preset on this fin, the limited post of this fin stops to prevent from dropping and parallel stacking
On base, the upper surface of every fin has several contour protuberance and/or lower surface has several contour protuberance,
To form fixed interval (FI) with neighbouring fin.Illustrate by the following examples.
First embodiment
Please referring initially to Fig. 2, the oxidation furnace heat-preserving container for semiconductor manufacturing of the present embodiment, it include the first base 11,
It is fixed on the first fin 13 of four A pillars 12,20 bauerite material of the first base 11 marginal position.Wherein,
The edge of one fin 13 has a groove 131 that equidistant four pass for A pillar 12, four A pillars 12 be installed in
On first base 11 of these four groove 131 correspondence positions and constitute " the first pillar " of the present invention, the first fin 13
Stopped to prevent to drop by A pillar 12 and removably parallel layers is laminated on the first base 11.By such setting, have
It is beneficial to picking and placeing of fin, thus increases and decreases number of fins, it is also possible to avoid the rocking and rotating in heat-preserving container of the first fin 13.
In the present embodiment, fin is next spacing by being evenly distributed on the four of base edge pillars, and experiment proves four all
The limit effect of the pillar of even distribution and prevent fin displacement effect optimal.But in actual application, the quantity of pillar is not limited to four
Root, the pillar of two (mutually in 180 °) or more than two can also play position-limiting action, but any two pillars and base
The angle of central point line all should less than or equal to 180 °, with by spacing for fin wherein, otherwise one side of something for fin is not owing to having
Pillar is had to stop and easily drop.
In the present embodiment, the upper surface of each first fin 13 has 4 projections 132, and projection 132 has identical thickness
Degree, thus can and neighbouring fin between formed fixed interval (FI), improve heat insulation effect.Wherein, the 4 of the present embodiment
Individual projection 132 is uniformly distributed in the fin edge between every two A pillars 12, to prevent fin weight after parallel stacking
The heart offsets, therefore, in other embodiments, as long as a mask has at least three to protrude in the upper surface of fin or lower surface
Portion, and the angle of any two protuberance and fin central point line is respectively less than 180 °, during to guarantee three protuberance differences
It is arranged in same one side of something of fin, it is possible to ensure that every fin can smoothly be placed, even if there being external force, also in stacking
It is not susceptible to the situations such as tilting.In other embodiments, projection or other protuberances can also be located at the lower surface of fin.
In the present embodiment, 20 fins are to comprise: 3 fins group being welded by 5 fins, and 1 by 3 fins
The fins group being welded, and the fin of 2 monolithics.By such setting, on the one hand can by the structure of fins group
To reduce the relative movement between monolithic fin as far as possible, it is ensured that system and the stability of technique；On the other hand, it is also possible to be easy to
The quantity regulating of fin and handling, be equivalent to decrease 5 as taken out a fins group being made up of 5 fins quickly
Fin.
Wherein, the projection on same fin, it is preferred with contour, so can improve the stability after fin stacking；Fin two-by-two
Gap between sheet, also to be equidistantly preferred, can improve the stability of heat-preserving container thermal capacitance gradient from top to bottom；In the present embodiment,
The spacing of the internal fin of fins group is 15mm, and the spacing between monolithic fin and between fin and fins group is 14.5mm,
The i.e. height of projection 132 substantially 15mm.In order to leave enough state spaces to cassette in ensureing oxidation furnace, fin
Spacing is unsuitable excessive；Meanwhile, it is also contemplated that fin itself prevents the effects such as heat leakage, its spacing is also unsuitable too small, therefore,
The present invention is advisable with 10-20mm, preferably 13-15mm.
In the present embodiment, fin is the most rounded with base, and diameter is essentially identical, puts into bottom oxidation furnace it at this heat-preserving container
After, fin and base edge all offset with oxidation furnace inwall patch, it is to avoid heat flows through from heat-preserving container edge and scatters and disappears, to obtain
Optimal use effect.
Second embodiment
Referring to Fig. 3, the heat-preserving container of the present embodiment includes the second base 21, B pillar 22 and several pieces the second fins 23.Its
In, the edge of the second base 21 is placed equidistant three B pillars 22, unlike first embodiment, and the second fin 23
Edge is not provided with groove, only relies on three equidistant B pillars 22 spacing.Visible, the structure of the present embodiment is simplest
One application, it is to avoid fin (such as quartz) the edge groove in fragility material may cause the damage of fin, also protects
Demonstrate,prove the integrity of fin, be conducive to improving the thermal capacitance of heat-preserving container.
In the present embodiment, the marginal position of fin upper surface is evenly distributed with three contour protuberances, with neighbouring
Fin forms fixed interval (FI).
In actual applications, the quantity of B pillar is not limited only to three, as long as having more than three and any two and base center
The angle of some line is less than the pillar of 180 °, it is possible to by spacing for fin wherein and parallel stacking.
3rd embodiment
Please referring next to Fig. 4, the heat-preserving container of the present embodiment includes the 3rd base 31, C pillar 32 and several pieces the 3rd fins 33.
Wherein, the edge of the 3rd base 31 is provided with two C pillars 32 mutually the most curved in 180 ° and cross section, this shape and the
The edge shape of three fins 33 matches, with by spacing wherein for the 3rd fin 33.In actual applications, the quantity of C pillar
Be not limited only to two, if having more than two and any two with the angle of base central point line less than or equal to 180 °
Pillar, it is possible to fin is played position-limiting action, so that the parallel stacking of multi-disc fin is wherein, but limit effect is with three uniformly
The pillar of distribution is preferred.
In the present embodiment, the marginal position of fin lower surface is evenly distributed with three contour protuberances, with neighbouring
Fin forms fixed interval (FI).
Being extended the structure of the present embodiment, several C pillars are linked to be an annulated column, by spacing for several pieces fins wherein and parallel
Stacking.
4th embodiment
Please continue to refer to Fig. 5, the heat-preserving container of the present embodiment includes that the 4th base 41, D-pillar 42 and several pieces fins (are not schemed
Show).Wherein, the center of the 4th base 41 arranges a D-pillar 42, and a hole is preset in the center of fin,
It is inserted in the hole that fin is preset by D-pillar 42, several pieces fins of stacking, and fin is limited in heat-preserving container.This reality
The D-pillar executing example is located at base center, and center is also located in the hole of fin, is possible to prevent to cause heat-preserving container side because fin rotates
Edge fin level is uneven, improves the stability after fin stacking.
In the present embodiment, the marginal position of fin upper surface is evenly distributed with four contour protuberances, with neighbouring
Fin forms fixed interval (FI).
5th embodiment
Referring to Fig. 6, the heat-preserving container of the present embodiment includes the 5th base 51, E pillar 52 and several pieces fins (not shown).
Wherein, the 5th base 51 arranging two E pillars 52, the same location of fin also presets two holes, by E pillar 52
It is inserted in the hole that fin is preset, several pieces fins of stacking, and fin is limited in heat-preserving container.The E pillar of the present embodiment sets
Within base edge position, by the setting of at least two E pillar, can effectively prevent fin rotation in heat-preserving container.
In the present embodiment, the marginal position of fin upper surface is evenly distributed with four contour protuberances, with neighbouring
Fin forms fixed interval (FI).
In other embodiments, in order to fix fin, make fin will not upper and lower displacement, also can be as solid on pillar in heat-preserving container
Fixed several fixtures, its one end is detachably secured on pillar, adjusts high and low position, and finally its other end supports downwards patch
The fin of the top, to realize preventing the purpose of fin upper and lower displacement.
The heat-preserving container of above-described embodiment put into oxidation furnace after fixed form and occupation mode etc. see prior art.
Process example 1
In the oxidation furnace with first embodiment heat-preserving container, it is passed through hydrogen and oxygen, silicon chip is carried out wet-oxygen oxidation, wherein,
(1) heat-preserving container number of fins is 12～15；
(2) wet oxygen technological temperature is 400～500 DEG C；
(3) main technical process is: 400 DEG C of wet oxygen techniques carry out 30～60min, H2: O2=6000SLM:4500SLM
(Standard Liters per Minute, lower same)；400 DEG C are warming up to 500 DEG C of wet oxygen techniques and carry out 20～30min, H2: O2=6000SLM:
4500SLM；500 DEG C of wet oxygen techniques carry out 60～120min, H2: O2=6000SLM:4500SLM；Under the conditions of 500 DEG C
N2Purging 30～60min, N2Flow is 10000SLM；
(4) art and craft door (with O and the seal member of magnetic fluid) and bottom of furnace body cooling water flow are
2～3L/min.
In the present embodiment, technological temperature is relatively low, uses less number of fins to ensure that the thermal capacitance of heat-preserving container, it is to avoid right
The damage of art and craft door potted component, can also avoid water vapor accumulation to produce the globule damage to art and craft door potted component simultaneously.
Process example 2
In the oxidation furnace with first embodiment heat-preserving container, it is passed through hydrogen and oxygen, silicon chip is carried out wet-oxygen oxidation, wherein,
(1) heat-preserving container number of fins is 15～18；
(2) wet oxygen technological temperature is 700～800 DEG C；
(3) main technical process is: 700 DEG C of wet oxygen techniques carry out 30～60min, H2: O2=6000SLM:4500SLM；
700 DEG C are warming up to 800 DEG C of wet oxygen techniques and carry out 20～30min, H2: O2=6000SLM:4500SLM；800 DEG C of wet oxygen works
Skill carries out 60～120min, H2: O2=6000SLM:4500SLM；N under the conditions of 800 DEG C2Purging 30～60min, N2
Flow is 10000SLM；
(4) art and craft door (with O and the seal member of magnetic fluid) and bottom of furnace body cooling water flow are
2～3L/min.
In the present embodiment, technological temperature is higher, uses more number of fins just to can ensure that the thermal capacitance of heat-preserving container, it is to avoid right
The damage of art and craft door potted component, can also avoid water vapor accumulation to produce the globule damage to art and craft door potted component simultaneously.
Process example 3
In the oxidation furnace with first embodiment heat-preserving container, it is passed through hydrogen and oxygen, silicon chip is carried out wet-oxygen oxidation, wherein,
(1) heat-preserving container number of fins is 18～20；
(2) wet oxygen technological temperature is 900～1000 DEG C；
(3) main technical process is: 900 DEG C of wet oxygen techniques carry out 30～60min, H2: O2=6000SLM:4500SLM；
900 DEG C are warming up to 1000 DEG C of wet oxygen techniques and carry out 20～30min, H2: O2=6000SLM:4500SLM；1000 DEG C of wet oxygens
Technique carries out 60～120min, H2: O2=6000SLM:4500SLM；N under the conditions of 1000 DEG C2Purging 30～60min,
N2Flow is 10000SLM；
(4) art and craft door (with O and the seal member of magnetic fluid) and bottom of furnace body cooling water flow are
2～3L/min.
In the present embodiment, technological temperature is higher, uses more number of fins just to can ensure that the thermal capacitance of heat-preserving container, it is to avoid right
The damage of art and craft door potted component, can also avoid water vapor accumulation to produce the globule damage to art and craft door potted component simultaneously.
Claims (13)
1. the oxidation furnace heat-preserving container for semiconductor manufacturing, it is characterised in that: it includes base, is fixed on base
Limited post, several pieces fins, this limited post include at least three pillars being located at base edge this fin edge spacing and/
Or at least pillar being located on base and pass the hole preset on this fin, the limited post of this fin stops to prevent from dropping
And parallel layers is laminated on base, the upper surface of this fin and/or lower surface have several contour protuberance, with phase up and down
Adjacent fin forms fixed interval (FI)；Wherein, heat-preserving container structure is assembled, and it has one or more pieces detachable fins,
By adjusting the quantity of fin according to different wet oxygen technological temperature demands, heat-preserving container thermal capacitance is made to change, to change technique
Temperature at Men.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 1, it is characterised in that: this limited post
Be at least three pillars and any two be respectively less than 180 ° with the angle of base central point line.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 2, it is characterised in that: this limited post
For being uniformly distributed in four pillars of base edge.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 3, it is characterised in that: this fin limit
Edge average mark is furnished with four grooves, these four pillars to arrange position corresponding with four grooves, with spacing fin.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 1, it is characterised in that: this limited post
It is located at the pillar within base edge position including a pillar being located at base center and/or at least two.
6. according to the oxidation furnace heat-preserving container for semiconductor manufacturing described in any one of claim 1 to 5, it is characterised in that:
A mask in the upper surface of this fin or lower surface has an at least three protuberance, and any two protuberance and fin center
The angle of some line is respectively less than 180 °, so that the steady stacking of fin is placed.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 6, it is characterised in that: this fin limit
Edge and oxidation furnace inwall offset patch.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 6, it is characterised in that: on this pillar
There is fixture, and support downwards the fin of patch the top with the most spacing fin.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 6, it is characterised in that: this fin is
2-20 sheet, and be piezoid, the gap between this fin is 10-20mm.
Oxidation furnace heat-preserving container for semiconductor manufacturing the most according to claim 9, it is characterised in that: in this fin
Having the fins group being at least welded by two panels fin, in this fins group, the gap between fin is 10-20mm.
11. 1 kinds utilize the method for oxidation furnace heat-preserving container oxidized silicon chip described in claim 1, and it comprises the following steps:
A. preset first temperature and the second temperature, and according to this first temperature or/and the second temperature determines the number of fin in heat-preserving container
Amount, at a temperature of first at this, is passed through hydrogen and oxygen, silicon chip is carried out wet oxygen technique 30-60 minute；
B. continue to be passed through hydrogen and oxygen, carry out wet oxygen technique 20-30 minute, and be warming up to the second temperature from this first temperature；
C. at a temperature of second at this, it is passed through hydrogen and oxygen, carries out wet oxygen technique 60-120 minute；
D., at this at a temperature of second, it is passed through nitrogen purging silicon chip.
The method of 12. oxidized silicon chips according to claim 11, it is characterised in that: if this second temperature exists
Between 400-600 DEG C, then in heat-preserving container, number of fins is adjusted to 10-15 sheet；If this first temperature is between 600-1000 DEG C,
Then in heat-preserving container, number of fins is adjusted to 15-20 sheet.
13. according to the method for the oxidized silicon chip described in claim 11 or 12, it is characterised in that: in step a, b and c
The flow being passed through hydrogen and oxygen is respectively 5500-6500SLM and 4000-5000SLM, is passed through the stream of nitrogen in step d
Amount is 9000-11000SLM, and this first temperature is 50-150 DEG C with the temperature difference of the second temperature, oxidation furnace art and craft door in this method
It is 2-3L/min with bottom of furnace body cooling water flow.
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| CN103377902A (en) * | 2012-04-28 | 2013-10-30 | 无锡华润上华科技有限公司 | Method for generating oxide layer by wafer thermal oxidation |
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