CN103862860B - Transparent conductive film room temperature deposition device and method - Google Patents
Transparent conductive film room temperature deposition device and method Download PDFInfo
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- CN103862860B CN103862860B CN201210536792.5A CN201210536792A CN103862860B CN 103862860 B CN103862860 B CN 103862860B CN 201210536792 A CN201210536792 A CN 201210536792A CN 103862860 B CN103862860 B CN 103862860B
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- transparent conductive
- room temperature
- gallium
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 230000008021 deposition Effects 0.000 title claims description 21
- 229910001338 liquidmetal Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 22
- 229910052733 gallium Inorganic materials 0.000 claims description 22
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 229910000846 In alloy Inorganic materials 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910001152 Bi alloy Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- NDXSUDIGSOJBLQ-UHFFFAOYSA-N [In][Bi][Zn][Sn] Chemical compound [In][Bi][Zn][Sn] NDXSUDIGSOJBLQ-UHFFFAOYSA-N 0.000 claims description 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 3
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000620 organic polymer Polymers 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000000976 ink Substances 0.000 claims 13
- 239000011370 conductive nanoparticle Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 3
- 238000009434 installation Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 35
- 238000000151 deposition Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
The present invention relates to conductive film technical field, be specifically related to a kind of transparent conductive film manufacturing installation and method that can at normal temperatures electrically conductive ink be direct splashing to substrate surface. This device comprises drive and control mechanism and connected sputter mechanism, and described sputter mechanism is communicated with electrically conductive ink; Described drive and control mechanism drives control sputter mechanism electrically conductive ink to be sputtered to the substrate surface that is covered with mask; Described electrically conductive ink is liquid metal ink. Device of the present invention can complete the preparation process of transparent conductive film under normal condition, not only reduce the requirement to preparing environment, and significantly simplify transparent conductive film preparation technology, improve the production efficiency of transparent conductive film, for the development of flexible electronic device provides strong technical support.
Description
Technical field
The present invention relates to conductive film technical field, being specifically related to one can be at normal temperatures by conductionInk is direct splashing to transparent conductive film manufacturing installation and the method for substrate surface.
Background technology
Increasing electronic device is towards the future development of flexibility, ultrathin, and flexible baseGeneral resistance to elevated temperatures is poor at the end, and the easily distortion of being heated, cannot pass through high temperature deposition or high annealingEtc. conventional method at its Surface Creation film. Therefore, find convenient, thin film fabrication cheaplyMethod is extremely urgent.
Conventional method for manufacturing thin film can be divided into chemical method and physical method at present. Film preparationChemical method be that certain chemical reaction occurs is prerequisite, these chemical reactions can be by warmEffect causes or caused to separate by the electricity of ion and cause, the control of its deposition process is comparatively complicated.The mass ratio of physical deposition method film forming is higher, but the required condition of high vacuum degree ring of its film forming procedureBorder, height excite sputtering energy, make the cost of thin film fabrication high.
Owing to thering is higher carrier concentration and wider photonic band gap, transparent conductive oxideFilm has been shown good photoelectric properties, such as low-resistivity and high visible light transmissivity. CommonTransparent conductive film has ITO(IndiumTinOxides, indium tin oxide) and ZAO (ZnO:Al, Al-dopedZincOxide, Al-Doped ZnO), ito thin film has been applied to displayThe optoelectronic areas such as transparency electrode and solar cell. For what realize in organic flexible substrateDeposition, makes the potential use of transparent conductive film expand collapsible liquid crystal display, non-crystalline silicon toThe fields such as solar cell, make Energy Intensity Reduction, simplified equipment, and room temperature deposition has very importantUsing value.
At present, rf magnetron sputtering, pulsed laser deposition etc. are all room temperature deposition transparent conductive filmsMethod. But these machining manufactures based on high vacuum, high energy demand will causeEnd user's use cost is too high, restricts its extensive popularization and application. In sum, novelTransparent conductive film room temperature deposition device and method is urgently excavated.
Summary of the invention
(1) technical problem that will solve
The object of the present invention is to provide a kind of transparent conductive film room temperature deposition device and method,For directly forming available transparent conductive film in the sputter of substrate surface room temperature mechanical, it is flexibilityLow energy consumption, the preparation technology of electronic device simplify the brand-new approach of opening up.
(2) technical scheme
Technical solution of the present invention is as follows:
A kind of transparent conductive film room temperature deposition device, comprises drive and control mechanism and connectedSputter mechanism, described sputter mechanism is communicated with electrically conductive ink; Described drive and control mechanism drives to control and spattersPenetrate mechanism and electrically conductive ink is sputtered to the substrate surface that is covered with mask; Described electrically conductive ink is liquidMetal ink.
Described sputter mechanism comprises ink brush and the unit of transferring with its interference fit; Described strokeThe transfer slip unit ink of transferring makes to be attached to the electrically conductive ink that ink brushes and is sputtered onto substrate surface.
The described unit of transferring is laciniation body.
Described drive and control mechanism comprises the control module, driver element and the brush holder that connect successively; InstituteStating ink brush is fixed on described brush holder; Described control module control drive unit drives brush holder bandMoving ink brush moves back and forth.
Described substrate is transparent organic polymer or glass.
Described liquid metal ink is by the liquid metal that comprises 0.1wt%-10wt% oxide or liquidState alloy is made.
Described liquid metal ink is by comprising 0.1wt%-10wt% oxide and being added withThe liquid metal of 0.1wt%-10wt% nano photovoltaic semiconductor grain and/or conductive nanoparticleOr liquid alloy is made.
Described liquid metal is gallium.
Described liquid alloy is gallium kirsite, gallium indium alloy, gallium ashbury metal, indium stannum alloy, galliumIndium stannum alloy, gallium indium tin kirsite, gallium indium tin zinc bismuth alloy, copper gallium indium alloy or gallium aluminium indium closeOne or more in gold.
The present invention also provides a kind of transparent conductive film room temperature deposition method:
According to the transparent conductive film manufacture method of said apparatus, described electrically conductive ink is sputtered onto baseBasal surface forms transparent conductive film after oxidation processes.
(3) beneficial effect
Transparent conductive film room temperature deposition device of the present invention, by sputter mechanism is set, utilizes machineLiquid metal ink is sputtered onto substrate surface by tool active force, thereby printing transparent is led in substrateConductive film; Device of the present invention can complete the preparation of transparent conductive film under normal conditionJourney, has not only reduced the requirement to preparing environment, and has significantly simplified transparent conductive film systemFor technique, improve the production efficiency of transparent conductive film, for the development of flexible electronic device is carriedSupply strong technical support.
Brief description of the drawings
Fig. 1 is the structural representation of a kind of transparent conductive film room temperature deposition of the present invention device.
Wherein, 1: substrate; 2: mask; 3: the unit of transferring; 4: ink brush; 5: brush holder;6: support baseboard; 7: driver element; 8: control module.
Detailed description of the invention
Below in conjunction with drawings and Examples, the detailed description of the invention of invention is described further.Following examples are only for the present invention is described, but are not used for limiting the scope of the invention.
A kind of transparent conductive film room temperature deposition device as shown in Figure 1, comprise drive and control mechanism withAnd connected sputter mechanism, sputter mechanism is communicated with electrically conductive ink; Drive and control mechanism drives controlSputter processed mechanism, sputter mechanism sputters at substrate 1 surface by mechanicals efforts by electrically conductive inkThereby formation transparent conductive film; Substrate 1 surface is covered with mask 2, and mask 2 is preferably easily clearThe sheeting of washing, is mainly convenient to electrically conductive ink and forms various variform on substrate 1 surfacePattern; Electrically conductive ink is liquid metal ink, and liquid metal and alloy electrical conductivity thereof are high, its oxygenCompound, all has good light transmission such as indium oxide, gallium oxide etc., under its room temperature, can protectHold liquid feature, make the sputter of electrically conductive ink under room temperature condition become possibility; In the present embodiment,Electrically conductive ink is placed among print cartridge, print cartridge and sputter mechanism connection, thus be in time sputter mechanismSupplement electrically conductive ink.
Wherein, sputter mechanism comprises ink brush 4 and the unit 3 of transferring with its interference fit;Transferring between unit 3 and ink brush 4 can relative motion, the oil thereby transfer in the unit 3 that makes to transferChina ink brush 4, will be attached to electrically conductive ink on ink brush 4 and be splashed to the surface of substrate 1; TransferUnit 3 comprises that any and electrically conductive ink do not react and can do relative motion with ink brush,Thereby sputter the structure of electrically conductive ink drop, in the present embodiment, the unit 3 of transferring is preferably sawDentalation body, by the broached-tooth design ink brush 4 of transferring; The requirement of ink brush 4 is must be resistance toWearing and tearing, its material can be hair, palm fibre, plastic wire, wire etc.
Wherein, drive and control mechanism comprises the control module 8, driver element 7 and the brush that connect successivelyFrame 5; Control module in the present embodiment comprises PC and connected brush holder control circuitPlate, the driving force way of output of major control driver element; Ink brush 4 is fixed on brush holder 5,Be convenient to dismounting and the replacing of ink brush; The unit 3 of transferring is fixed on support baseboard 6, props up simultaneouslyOn support base plate 6, one section of guide rail can be set, be convenient to driver element 7 and drive ink brush with respect to drawingThe motion of transfer slip unit 3; Driver element 7 is preferably motor, is mainly used in the motion into brush holder 5Driving force is provided; Control module control driver element 7 drives brush holder 5 to move, and brush holder 5 drivesInk brush 4 moves back and forth with certain speed with respect to the unit 3 of transferring, and spatters thereby regulate the room temperatureThe speed of penetrating, is convenient to better deposition and forms transparent conductive film.
Wherein, the material of substrate 1 can be the transparent material including flexible substrates, this realityExecute preferred transparent organic polymer or the glass material cheaply of adopting in example.
Wherein, liquid metal ink can be by the liquid metal that comprises 0.1wt%-10wt% oxideOr liquid alloy is made; Liquid metal ink also can be by comprising 0.1wt%-10wt% oxide alsoBe added with the chamber of 0.1wt%-10wt% nano photovoltaic semiconductor grain and/or conductive nanoparticleTemperature melting point metals or alloy are made; Receive by adding nano photovoltaic semiconductor grain and/or electric conductivityRice grain can strengthen the light energy use efficiency of transparent conductive film, has improved energy utilization rate.Wherein, liquid metal can be gallium or other any known suitable transparent conductive films of preparingLiquid metal; Liquid alloy can be gallium kirsite, gallium indium alloy, gallium ashbury metal, indium tinAlloy, gallium-indium-tin alloy, gallium indium tin kirsite, gallium indium tin zinc bismuth alloy, copper gallium indium alloy orOne or more in gallium aluminium indium alloy.
By said apparatus, liquid metal ink is sputtered onto after substrate surface to liquid metal inkAfter oxidation processes, form transparent conductive film, the transparent conductive film surface coverage forming like thisThere is oxide cover layer, thereby play strong protective effect.
The flow process of above-mentioned transparent conductive film room temperature deposition device and method in practical operation is passableFor:
1, the mask of making required form, covers on glass plate;
2,, at room temperature by the gallium indium alloy that contains 0.25wt% oxide, made certain flowingProperty liquid metal ink, make ink be stained with equably ink to brush by controlling the amount out of ink of print cartridge;
3,, by the reciprocating motion of control module control brush holder, liquid metal ink is spattered equablyBe mapped to the glass pane surface that is covered with mask;
4, liquid metal ink forms transparent conductive film after oxidation processes.
Transparent conductive film precipitation equipment and method that technique scheme provides, utilize inkBrush with the relative motion of laciniation body, by mechanicals efforts by discrete electrically conductive ink dropletAnd sputter, thereby at even printing transparent conductive film in flexible and transparent substrate of transparent substrates,Under normal condition, can complete its preparation process, reduce the requirement to environment, and then significantly letterChange transparent conductive film preparation technology, improved its production and application efficiency. Meanwhile, the present inventionTechnical scheme can be applicable to the technical fields such as folding liquid crystal display, non-crystal silicon solar cell,Can reduce greatly the preparation cost of transparent conductive film, be low energy consumption, simplification preparation technologyOpen up a brand-new approach.
Above embodiment is only for the present invention is described, and limitation of the present invention is not relevantThe those of ordinary skill of technical field, without departing from the spirit and scope of the present invention,Can also make a variety of changes and modification, therefore all technical schemes that are equal to also belong to the present inventionProtection category.
Claims (9)
1. a transparent conductive film room temperature deposition device, is characterized in that, comprises drive and control mechanismAnd connected sputter mechanism, described sputter mechanism is communicated with electrically conductive ink; The described control machine that drivesStructure drives control sputter mechanism electrically conductive ink to be sputtered to substrate (1) surface that is covered with mask (2);Described electrically conductive ink is liquid metal ink;
Described sputter mechanism comprises ink brush (4) and the unit of transferring (3) with its interference fit;The described unit of transferring (3) the ink brush (4) of transferring makes to be attached to the conductive oil on ink brush (4)China ink is sputtered onto substrate (1) surface.
2. transparent conductive film room temperature deposition device according to claim 1, its feature existsIn, described in the unit (3) of transferring be laciniation body.
3. transparent conductive film room temperature deposition device according to claim 1, its feature existsIn, described drive and control mechanism comprise the control module (8) that connects successively, driver element (7) andBrush holder (5); Described ink brush (4) is fixed on described brush holder (5); Described control module controlDriver element processed (7) drives brush holder (5) to drive ink brush (4) to move back and forth.
4. according to the transparent conductive film room temperature deposition dress described in claims 1 to 3 any onePut, it is characterized in that, described substrate (1) is transparent organic polymer or glass.
5. transparent conductive film room temperature deposition device according to claim 1, its feature existsIn, described liquid metal ink is by the liquid metal that comprises 0.1wt%-10wt% oxide or liquid stateAlloy is made.
6. transparent conductive film room temperature deposition device according to claim 5, its feature existsIn, described liquid metal ink is by comprising 0.1wt%-10wt% oxide and being added withThe liquid metal of 0.1wt%-10wt% nano photovoltaic semiconductor grain and/or conductive nanoparticle orLiquid alloy is made.
7. according to the transparent conductive film room temperature deposition device described in claim 5 or 6, its spyLevy and be, described liquid metal is gallium.
8. according to the transparent conductive film room temperature deposition device described in claim 5 or 6, its spyLevy and be, described liquid alloy be gallium kirsite, gallium indium alloy, gallium ashbury metal, indium stannum alloy,Gallium-indium-tin alloy, gallium indium tin kirsite, gallium indium tin zinc bismuth alloy, copper gallium indium alloy or gallium aluminium indium closeOne or more in gold.
9. heavy according to the transparent conductive film room temperature of installing described in claim 1 to 8 any oneLong-pending method, is characterized in that, described electrically conductive ink is sputtered onto substrate surface and forms after oxidation processesTransparent conductive film.
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| CN201210536792.5A CN103862860B (en) | 2012-12-12 | 2012-12-12 | Transparent conductive film room temperature deposition device and method |
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| CN107527675A (en) * | 2017-07-21 | 2017-12-29 | 华南师范大学 | A kind of flexible conducting film and preparation method thereof |
| CN109273169B (en) * | 2018-09-18 | 2020-01-07 | 北京梦之墨科技有限公司 | Gallium-based transparent conductive film, preparation method thereof and electronic device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102515557A (en) * | 2012-01-05 | 2012-06-27 | 河南华美新材料科技有限公司 | Coating device for producing large-sized uniform nanometer transparent conductive film |
| CN202400972U (en) * | 2012-01-05 | 2012-08-29 | 河南华美新材料科技有限公司 | Coating device for manufacturing large-area uniform nano transparent conductive films |
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| JP3113851B2 (en) * | 1997-11-28 | 2000-12-04 | 日本写真印刷株式会社 | Method for producing ink for forming transparent conductive film |
| JP4422400B2 (en) * | 2002-12-13 | 2010-02-24 | 大日本印刷株式会社 | Manufacturing method of color filter |
| JP2006054098A (en) * | 2004-08-11 | 2006-02-23 | Optrex Corp | Manufacturing method of transparent conductive film and organic el light-emitting element |
| CN101294272A (en) * | 2008-05-27 | 2008-10-29 | 浙江大学 | Method for sputtering and depositing tin indium oxide transparent electroconductive film on flexible substrate at room temperature |
| KR101487342B1 (en) * | 2010-07-30 | 2015-01-30 | 주식회사 잉크테크 | Method for manufacturing transparent conductive layer and transparent conductive layer manufactured by the method |
| CN102677012A (en) * | 2012-05-18 | 2012-09-19 | 中国科学院上海光学精密机械研究所 | Preparation method of multi-layer transparent conductive film |
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| CN102515557A (en) * | 2012-01-05 | 2012-06-27 | 河南华美新材料科技有限公司 | Coating device for producing large-sized uniform nanometer transparent conductive film |
| CN202400972U (en) * | 2012-01-05 | 2012-08-29 | 河南华美新材料科技有限公司 | Coating device for manufacturing large-area uniform nano transparent conductive films |
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Application publication date: 20140618 Assignee: BEIJING DREAM INK TECHNOLOGIES Co.,Ltd. Assignor: Technical Institute of Physics and Chemistry Chinese Academy of Sciences Contract record no.: 2016990000417 Denomination of invention: Transparent conductive film room temperature deposition device and method Granted publication date: 20160504 License type: Exclusive License Record date: 20161008 |
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Effective date of registration: 20240228 Address after: 100081 room 9009, 9 / F, 65 North Fourth Ring Road West, Haidian District, Beijing Patentee after: BEIJING DREAM INK TECHNOLOGIES Co.,Ltd. Country or region after: China Address before: No. 29 East Zhongguancun Road, Haidian District, Beijing 100190 Patentee before: Technical Institute of Physics and Chemistry Chinese Academy of Sciences Country or region before: China |