CN103855170B

CN103855170B - Display device and electronic equipment

Info

Publication number: CN103855170B
Application number: CN201310625431.2A
Authority: CN
Inventors: 山崎舜平; 木村肇; 三宅博之; 小山润
Original assignee: Semiconductor Energy Laboratory Co Ltd
Current assignee: Semiconductor Energy Laboratory Co Ltd
Priority date: 2012-11-28
Filing date: 2013-11-28
Publication date: 2018-08-31
Anticipated expiration: 2033-11-28

Abstract

The present invention provides a kind of novel display device.One embodiment of the present invention is a kind of display device, including：Pixel portion；Drive circuit in the outside of pixel portion is set；And the protection circuit of a pair of electrodes is connect and included with one or both in pixel portion and drive circuit; wherein; pixel portion includes the transistor for being configured to rectangular pixel electrode and being electrically connected with pixel electrode; transistor includes the first insulating layer comprising nitrogen and silicon and includes the second insulating layer of oxygen, nitrogen and silicon; also, protect circuit that there is the first insulating layer between a pair of electrodes.

Description

Display device and electronic equipment

Technical field

The present invention relates to a kind of object, method, manufacturing method, processes（process）, machine（machine）, product （manufacture）Or component（composition of matter）.Especially, the present invention relates to a kind of semiconductor device, Display device, light-emitting device, electronic equipment, their driving method or manufacturing method.For example, the invention particularly relates to a kind of packets Include semiconductor device, display device, electronic equipment or the light-emitting device of oxide semiconductor.

Note that display device refers to the device for including display element.In addition, display device includes driving the drive of multiple pixels Dynamic circuit etc..In addition, display device includes control circuit, power circuit, the signal generating circuit etc. of configuration on other substrates.

Background technology

In recent years, with technological innovation, with the miniature of element that liquid crystal display device is typical display device and wiring Change progress, volume production technology also significantly improves.From now on, it needs to realize by further increasing fabrication yield cost effective.

When applying the surge voltage caused by electrostatic etc. to display device, element is destroyed and cannot normally be shown Show.Therefore, there is the worry that fabrication yield deteriorates.As the countermeasure of the above problem, it is provided in a display device for making wave Gush the protection circuit that voltage is distributed to other wirings（For example, referring to patent document 1 to 7）.

[patent document 1] Japanese patent application discloses 2010-92036 bulletins

[patent document 2] Japanese patent application discloses 2010-92037 bulletins

[patent document 3] Japanese patent application discloses 2010-97203 bulletins

[patent document 4] Japanese patent application discloses 2010-97204 bulletins

[patent document 5] Japanese patent application discloses 2010-107976 bulletins

[patent document 6] Japanese patent application discloses 2010-107977 bulletins

[patent document 7] Japanese patent application discloses 2010-113346 bulletins

In a display device, protection circuit etc. is extremely important for improving the structure of reliability.

Invention content

Then, one of the project of one embodiment of the present invention be to provide it is a kind of can improve reliability have novel structure Display device.Alternatively, one of the project of one embodiment of the present invention is to provide, a kind of can to reduce having for electrostatic breakdown new The display device of clever structure.Alternatively, one of the project of one embodiment of the present invention is to provide a kind of influence that can reduce electrostatic The display device with novel structure.Alternatively, one of the project of one embodiment of the present invention is to provide one kind and is less likely to be damaged The display device with novel structure.It can be reduced alternatively, one of the project of one embodiment of the present invention is to provide one kind The display device with novel structure influenced caused by transistor in grinding process.Alternatively, one embodiment of the present invention One of project is to provide a kind of display with novel structure that can be reduced and be influenced caused by transistor in inspection operation Device.Alternatively, bad when one of the project of one embodiment of the present invention is to provide a kind of can reduce using touch sensor The display device with novel structure of the influence of phenomenon.Alternatively, one of the project of one embodiment of the present invention is to provide one kind The characteristic that transistor can be reduced changes or the display device with novel structure of deterioration.Alternatively, one embodiment of the present invention One of project be to provide a kind of display with novel structure of variation or the deterioration of the threshold voltage that can reduce transistor Device.Alternatively, one of the project of one embodiment of the present invention is to provide a kind of having for normal conductingization that can inhibit transistor The display device of novel structure.Alternatively, one of the project of one embodiment of the present invention is to provide and a kind of can improve transistor The display device with novel structure of fabrication yield.Alternatively, one of the project of one embodiment of the present invention is to provide one kind The display device with novel structure of transistor can be protected.Alternatively, one of the project of one embodiment of the present invention is to provide A kind of display device with novel structure that can make to accumulate in the charge discharge in pixel electrode.Alternatively, the one of the present invention One of the project of a mode is to provide a kind of display dress with novel structure that can make to accumulate in the charge discharge in wiring It sets.Alternatively, one of the project of one embodiment of the present invention is to provide a kind of oxide semiconductor being improved including conductivity The display device with novel structure of layer.It can be controlled alternatively, one of the project of one embodiment of the present invention is to provide one kind The display device with novel structure of the conductivity of oxide semiconductor layer.Alternatively, the project of one embodiment of the present invention it One is to provide a kind of display device with novel structure for the conductivity that can control gate insulating film.Alternatively, the present invention One of the project of one mode is to provide a kind of display device with novel structure that easy to implement can normally show.

Note that the record of these projects does not interfere the presence of other projects.In addition, one embodiment of the present invention does not need to Solve all the above subject.In addition, from the record project other than the above of specification, attached drawing, claims etc. be aobvious Right, and project other than the above can be extracted out from the record of specification, attached drawing, claims and etc.

One embodiment of the present invention is a kind of display device, including：Pixel portion；Driving electricity in the outside of pixel portion is set Road portion；And the protection circuit of a pair of electrodes is connect and included with one or both in pixel portion and drive circuit, wherein Pixel portion includes the transistor for being configured to rectangular pixel electrode and being electrically connected with pixel electrode, transistor include comprising nitrogen and First insulating layer of silicon and the second insulating layer for including oxygen, nitrogen and silicon, also, circuit is protected to have first between a pair of electrodes Insulating layer.

According to one method of the present invention, the reliability of display device can be improved.

Description of the drawings

Figure 1A and Figure 1B is the plane model figure of display device and illustrates the circuit diagram of protection circuit；

Fig. 2A and Fig. 2 B are the sectional views for the resistive element for illustrating display device；

Fig. 3 is the plane model figure for the display device for including the circuit diagram for protecting circuit；

Fig. 4 A and Fig. 4 B are the plan view and sectional view for illustrating to protect circuit and resistive element；

Fig. 5 is the circuit diagram for illustrating to protect circuit；

Fig. 6 is the sectional view of display device；

Fig. 7 A and Fig. 7 B are the sectional views for the manufacturing method for illustrating display device；

Fig. 8 A and Fig. 8 B are the sectional views for the manufacturing method for illustrating display device；

Fig. 9 A and Fig. 9 B are the sectional views for the manufacturing method for illustrating display device；

Figure 10 A and Figure 10 B are the sectional views for the manufacturing method for illustrating display device；

Figure 11 is the sectional view for the manufacturing method for illustrating display device；

Figure 12 A and Figure 12 B are the sectional views for the manufacturing method for illustrating display device；

Figure 13 A and Figure 13 B are the circuit diagrams for the pixel circuit that explanation can be used in display device；

Figure 14 A to Figure 14 D are the plane for illustrating transistor and the figure in section；

Figure 15 A to Figure 15 D are the plane for illustrating resistive element and the figure in section；

Figure 16 A to Figure 16 C are the figures for the circuit diagram for illustrating resistive element；

Figure 17 A to Figure 17 C are the figures in the section for illustrating resistive element；

Figure 18 A to Figure 18 D are the sectional views of transistor and illustrate the figure of oxide stack；

Figure 19 is the sectional view for the connecting end sub-portion for illustrating display device；

Figure 20 A and Figure 20 B are the figures for illustrating touch sensor；

Figure 21 is the circuit diagram for illustrating touch sensor；

Figure 22 is the sectional view for illustrating touch sensor；

Figure 23 is figure of the explanation using the display module of the display device of one embodiment of the present invention；

Figure 24 A to Figure 24 H are figure of the explanation using the electronic equipment of the display device of one embodiment of the present invention；

Figure 25 A to Figure 25 H are figure of the explanation using the electronic equipment of the display device of one embodiment of the present invention.

The figure that selects of the present invention is Fig. 6.

Specific implementation mode

In the following, being illustrated to embodiment with reference to attached drawing.But embodiment can be come in fact in a manner of multiple and different It applies, those of ordinary skill in the art can easily understand that a fact, being exactly its mode and detailed content can By be transformed to without departing from the spirit and scope of the present invention it is various in the form of.Therefore, the present invention does not answer This is interpreted only to be limited in the content recorded in embodiment as shown below.

Note that in the accompanying drawings, size, the thickness of layer or region are exaggerated sometimes for for the sake of defining.Therefore, not necessarily It is confined to its scale.In addition, in the accompanying drawings, it is schematically shown ideal example, and be not limited to shape shown in the drawings or Numerical value etc..For example, may include the uneven etc. of signal caused by clutter or time difference, voltage or electric current.

In addition, in this specification etc, transistor refers to the member including at least three terminals of grid, drain electrode and source electrode Part.It is draining（Drain terminal, drain region or drain electrode）With source electrode（Source terminal, source region or source electrode）Between have channel region, And electric current can be flowed through by drain electrode, channel region and source electrode.

Here, because source electrode and drain electrode is exchanged according to the structure of transistor or operating condition etc., therefore be difficult which is limited It is a be source electrode which be drain electrode.Therefore, the part of source electrode or the part as drain electrode be will act as sometimes and be not known as source electrode or drain electrode, And the side in source electrode and drain electrode is known as first electrode and another party in source electrode and drain electrode is known as second electrode.

Note that the ordinal numbers such as " first ", " second ", " third " used in this specification are in order to avoid structural element It confuses and appended, rather than in order to be defined in terms of the number and appended.

Note that in the present specification, the description of " A is made to be connect with B " is also wrapped other than the case where making A and B be directly connected to Include the case where making A be electrically connected with B.Here, the description of " A is made to be electrically connected with B " refers to ought exist to have certain electricity between A and B When the object of effect, giving and accepting for the electric signal of A and B can be carried out.

Note that in the present specification, for convenience's sake, the word configured using the expression of "upper" "lower" etc. is with reference to attached Figure illustrates the position relationship of structure.In addition, the position relationship of structure suitably changes its relationship according to the direction for describing each structure. Therefore, it is not limited to the word illustrated in this specification, according to circumstances can suitably change word.

In addition, the configuration of each circuitry block of block diagram in attached drawing be in order to illustrate and certain positional relationship, although It is shown as making different functions realize using different circuitry blocks, but in circuit sometimes actually or region, it will It, which is provided with, so that different functions is realized in identical circuit or identical region.In addition, the block diagram in attached drawing Each circuitry block function be in order to illustrate and specific function exists sometimes although it is shown as a circuitry block In actual circuit or region, the processing carried out by a circuitry block is set as carrying out by multiple circuitry blocks.

Note that pixel, which is equivalent to, can control a color elements（For example, R（It is red）、G（Green）、B（Blue）In appoint It is a kind of）Brightness the unit of display.Therefore, when using colour display device, the minimum unit of display of coloured image by R picture Three kinds of pixels of the pixel of element, the pixel of G and B are constituted.But for showing that the color elements of coloured image are not limited to three kinds Color, and the color other than three kinds or more of color or RGB can also be used.

In the present specification, the embodiments of the present invention will be described with reference to the drawings.In addition, carrying out in the following order each The explanation of embodiment.

1. embodiment 1（Basic structure according to one method of the present invention）

2. embodiment 2（Each structure of display device）

3. embodiment 3（The manufacturing method of display device）

4. embodiment 4（The structure of pixel circuit）

5. embodiment 5（The structure of pixel portion）

6. embodiment 6（Protect the version of circuit）

7. embodiment 7（The structure of transistor）

8. embodiment 8（The structure of connecting end sub-portion）

9. embodiment 9（Touch sensor, display module）

10. embodiment 10（Electronic equipment）

Embodiment 1

In the present embodiment, A to Fig. 5 illustrates the display device of one embodiment of the present invention referring to Fig.1.

Display device shown in figure 1A includes：The region of display element with pixel（Hereinafter referred to as pixel portion 102）；Tool There is the circuit portion of the circuit for driving pixel（Hereinafter referred to as drive circuit 104）；Has the function of the circuit of protection element （Hereinafter referred to as protect circuit 106）；And portion of terminal 107.

Pixel portion 102 includes being used for driving being configured to X rows（The natural number that X is 2 or more）Y is arranged（The natural number that Y is 2 or more） Multiple display elements circuit（Hereinafter referred to as pixel circuit 108）, drive circuit 104 includes the signal of output selection pixel （Scanning signal）Circuit（Hereinafter referred to as gate drivers 104a）, for supplying the signal of the display element for driving pixel （Data-signal）Circuit（Hereinafter referred to as source electrode driver 104b）Deng driving circuit.

Gate drivers 104a has shift register etc..Gate drivers 104a by portion of terminal 107 be entered for It drives the signal of shift register and exports the signal.For example, gate drivers 104a is entered initial pulse signal, clock Signal etc. and output pulse signal.Gate drivers 104a has the wiring that control is applied in scanning signal（Hereinafter referred to as scan Line GL_1 to GL_X）Current potential function.Alternatively, it is also possible to which multiple gate drivers 104a are arranged, and driven by multiple grids Dynamic device 104a controls scan line GL_1 to GL_X respectively.Alternatively, gate drivers 104a, which has, is capable of supply that initializing signal Function.But it is not limited to this, gate drivers 104a can supply other signals.

Source electrode driver 104b has shift register etc..In addition to the signal for driving shift register, become The signal on the basis of data-signal（Picture element signal）It is input to source electrode driver 104b also by portion of terminal 107.Source electrode driver 104b has the function that the data-signal that pixel circuit 108 is written is generated based on picture element signal.In addition, source electrode driver 104b has controls the defeated of data-signal according to the pulse signal generated by the input of initial pulse signal, clock signal etc. The function of going out.In addition, source electrode driver 104b has the wiring that control is applied in data-signal（Hereinafter referred to as data line DL_1 is extremely DL_Y）Current potential function.Alternatively, source electrode driver 104b has the function of being capable of supply that initializing signal.But do not limit to In this, source electrode driver 104b can supply other signals.

Source electrode driver 104b compositions such as using multiple analog switches.It is led by successively becoming multiple analog switches Logical state, source electrode driver 104b can be exported carries out signal that the time is split to form as data-signal to picture signal.This Outside, shift register etc. can also be used to constitute source electrode driver 104b.

Respectively by being applied in multiple wirings of scanning signal（Hereinafter referred to as scan line GL）One of and be applied in data letter Number multiple wirings（Hereinafter referred to as data line DL）Each of the multiple pixel circuits of a pair 108 apply pulse signal and data Signal.In addition, controlled by gate drivers 104a multiple pixel circuits 108 each in data-signal data write-in And it keeps.For example, passing through scan line GL_m（M is X natural numbers below）The picture arranged from 104a pairs of m row n-th of gate drivers 108 input pulse signal of plain circuit, and data line DL_n is passed through according to the current potential of scan line GL_m（N is Y natural numbers below） 108 input data signal of pixel circuit arranged from 104b pairs of m row n-th of source electrode driver.

Protect circuit 106 and the scan line GL connections as the wiring between gate drivers 104a and pixel circuit 108. Alternatively, protection circuit 106 and the data line DL connections as the wiring between source electrode driver 104b and pixel circuit 108.Or Person, protection circuit 106 can be connect with the wiring between gate drivers 104a and portion of terminal 107.Alternatively, protection circuit 106 It can be connect with the wiring between source electrode driver 104b and portion of terminal 107.Note that portion of terminal 107 refer to be provided with for from Part of the external circuit to the terminal of display device input power, control signal and picture element signal.

Protection circuit 106 makes the wiring when being the current potential except range as defined in the wiring for being connected to itself is supplied With other wirings as the circuit of conducting state.But it is not limited to this, protection circuit 106 can also supply other signals.

It as shown in Figure 1A, can be with by the way that protection circuit 106 is arranged to each of pixel portion 102 and drive circuit 104 Display device is improved to because of ESD（Electro Static Discharge：Static discharge）Deng and generate overcurrent patience. But protect circuit 106 structure it is not limited to this, for example, it is also possible to using by gate drivers 104a with protection circuit 106 The structure of connection or the structure for connecting source electrode driver 104b with protection circuit 106.Alternatively, can also use portion of terminal 107 structures being connect with protection circuit 106.

Although alternatively, showing to form drive circuit by gate drivers 104a and source electrode driver 104b in figure 1A 104 example, but it is not limited to this.For example, it is also possible to using such as lower structure：It only forms gate drivers 104a and installs another The formation of outer preparation has the substrate of source electrode drive circuit（For example, the driving electricity formed by single crystal semiconductor films, polycrystal semiconductor film Road substrate）Structure.

In other words, protection circuit 106 is electrically connected with one or both in pixel portion 102 and drive circuit 104.

The compositions such as resistive element can be used for example in protection circuit 106.Figure 1B shows specifically to protect an example of circuit Son.

It is protected in circuit 106 shown in Figure 1B, resistive element 114 is connected between wiring 110 and wiring 112.Separately Outside, wiring 110 is, for example, that the cloth of drive circuit 104 is led to from scan line GL shown in figure 1A, data line DL or portion of terminal 107 Line.

In addition, wiring 112 is, for example, to be applied in for gate drivers 104a shown in figure 1A or source electrode driver 104b supplies the current potential of the power cord of power supply（VDD, VSS or GND）Wiring.Alternatively, wiring 112 is to be applied in common electric potential （Common potential）Wiring（Common line）.As an example, wiring 112 preferably with for gate drivers 104a supply electricity The power cord in source especially supplies the wiring connection of low potential.This is because：Scan line GL is low in most period Therefore current potential when the current potential for connecting up 112 is also low potential, can reduce and leak into cloth from scan line GL in normal work The electric current of line 112.

Here, being illustrated to the example that can be used as the structure of resistive element 114 with reference to Fig. 2A and Fig. 2 B.

Resistive element 114 shown in Fig. 2A includes：The conductive layer being formed on substrate 140（Hereinafter referred to as lead Electric layer 142）；The layer with insulating properties being formed on substrate 140 and conductive layer 142（Hereinafter referred to as insulating layer 144）；And shape At the conductive layer on insulating layer 144（Hereinafter referred to as conductive layer 148）.

Resistive element 114 shown in Fig. 2 B includes：The conductive layer 142 being formed on substrate 140；Be formed in substrate 140 and Insulating layer 144 on conductive layer 142；The insulating layer 146 being formed on insulating layer 144；And it is formed in insulating layer 144 and insulation Conductive layer 148 on layer 146.

In addition, wiring 112 shown in Figure 1B is equivalent to the wiring formed by conductive layer 142.In addition, being connected up shown in Figure 1B 110 are equivalent to the wiring formed by conductive layer 148.

In other words, resistive element 114 shown in Fig. 2A and Fig. 2 B has the knot that insulating layer 144 is clamped between a pair of electrodes Structure, by the resistivity for controlling insulating layer 144（Also referred to as specific resistance）, when an electrode in a pair of electrodes flows through overcurrent When, part or all that can make overcurrent flows there through another electrode in a pair of electrodes.

But the resistance of the insulating layer between being clipped in a pair of electrodes it is higher when, for example, using resistance be 10¹⁸Ωcm In the case of above insulating layer, when an electrode in a pair of electrodes flows through overcurrent, overcurrent cannot be made successfully to flow It crosses to another electrode in a pair of electrodes.

Then, in one embodiment of the present invention, as the insulating layer 144 being clipped between a pair of electrodes, such as electricity is used Resistance rate is 10¹⁰Ω cm are less than 10¹⁸Ω cm, preferably 10¹¹Ω cm are less than 10¹⁵The insulating film of Ω cm.As tool There is the insulating film of such resistivity, for example, the insulating film comprising nitrogen and silicon.

In addition, as shown in Figure 2 B, resistive element 114 can also have the end that will cover an electrode in a pair of electrodes Insulating layer 146 structure on insulating layer 144 is set.Insulating layer 146 can use its resistivity higher than the material of insulating layer 144 Material is formed.As insulating layer 146, it is preferable to use such as resistivity is 10¹⁸The insulating film of Ω cm or more.As with such electricity The insulating film of resistance rate, for example, including the insulating film of oxygen, nitrogen and silicon.

In addition, in the transistor of the composition pixel portion 102 and drive circuit 104 shown in figure 1A for constituting display device In manufacturing process, the conductive layer 142,148 of a pair of electrodes as resistive element 114 can be formed simultaneously and as resistance member The insulating layer 144,146 of the insulating layer of part 114.

Specifically, for example, conductive layer 142 can be manufactured in process identical with the gate electrode of above-mentioned transistor, it can With in process identical with the source electrode of above-mentioned transistor or drain electrode manufacture conductive layer 148, can with above-mentioned transistor The identical process of gate insulating layer in manufacture insulating layer 144,146.

In this way, by the way that protection circuit 106, pixel portion 102 and drive circuit are arranged in display device shown in figure 1A 104 can improve the patience of the overcurrent to being generated by ESD etc..It is, therefore, possible to provide a kind of can improve the new of reliability The display device of grain husk.

In addition, as an example, pixel portion 102 is preferably formed on the same substrate with protection circuit 106.As a result, may be used To reduce the number of components or the number of terminals.Furthermore part or all of as an example, drive circuit 104 is excellent Choosing is formed on the same substrate with pixel portion 102.Thus, it is possible to reduce the number of components or the number of terminals.Work as driving circuit When part or all of portion 104 is not formed on the same substrate with pixel portion 102, drive circuit 104 in many cases Part or all pass through COG or TAB installation.

Then, the concrete structure of display device shown in figure 1A is illustrated with reference to Fig. 3.

Display device shown in Fig. 3 includes：Pixel portion 102；Gate drivers 104a as drive circuit；Source electrode drives Dynamic device 104b；Protect circuit 106_1；Protect circuit 106_2；Protect circuit 106_3；And protection circuit 106_4.

In addition, pixel portion 102, gate drivers 104a and source electrode driver 104b are identical as structure shown in figure 1A.

It includes transistor 151,152,153,154 and resistive element 171,172,173 to protect circuit 106_1.In addition, protecting Protection circuit 106_1 is arranged between gate drivers 104a and the wiring 181,182,183 for being connected to gate drivers 104a. In addition, in transistor 151, the first terminal for being used as source electrode is connect with the Second terminal as gate electrode, is used as drain electrode Third terminal 183 connect with wiring.The first terminal for being used as source electrode in transistor 152 and second as gate electrode Terminal connects, and the third terminal for being used as drain electrode is connect with the first terminal of transistor 151.In transistor 153, it is used as source electricity The first terminal of pole is connect with the Second terminal as gate electrode, is used as the third terminal and the first of transistor 152 of drain electrode Terminal connects.In transistor 154, the first terminal for being used as source electrode is connect with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is connect with the first terminal of transistor 153.In addition, the first terminal of transistor 154 and wiring 183 and cloth Line 181 connects.In addition, wiring 183 is provided with resistive element 171,173.In addition, the setting of resistive element 172 is in wiring 182 and crystalline substance Between the first terminal of body pipe 152 and the third terminal of transistor 153.

In addition, wiring 181 for example may be used as the power cord for being applied in low power supply potential VSS.In addition, wiring 182 is for example It may be used as common line.In addition, wiring 183 for example may be used as the power cord for being applied in high power supply potential VDD.

It includes transistor 155,156,157,158 and resistive element 174,175 to protect circuit 106_2.In addition, protection electricity Road 106_2 is arranged between gate drivers 104a and pixel portion 102.In addition, in transistor 155, it is used as the of source electrode One terminal is connect with the Second terminal as gate electrode, and the third terminal for being used as drain electrode is connect with wiring 185.In transistor In 156, the first terminal for being used as source electrode is connect with the Second terminal as gate electrode, is used as the third terminal and crystalline substance of drain electrode The first terminal of body pipe 155 connects.In transistor 157, it is used as the first terminal of source electrode and the second end for being used as gate electrode Son connection, the third terminal for being used as drain electrode are connect with the first terminal of transistor 156.In transistor 158, it is used as source electrode First terminal connect with as the Second terminal of gate electrode, the first end of third terminal and transistor 157 as drain electrode Son connection.In addition, the first terminal of transistor 158 is connect with wiring 184.In addition, resistive element 174 setting wiring 185 with Between the first terminal of transistor 156 and the third terminal of transistor 157.In addition, resistive element 175 setting wiring 184 with Between the first terminal of transistor 156 and the third terminal of transistor 157.

In addition, wiring 184 for example may be used as the power cord for being applied in low power supply potential VSS.In addition, wiring 185 is for example It may be used as the power cord for being applied in high power supply potential VDD.In addition, wiring 186 for example may be used as grid line.

It includes transistor 159,160,161,162 and resistive element 176,177 to protect circuit 106_3.In addition, protection electricity Road 106_3 is arranged between source electrode driver 104b and pixel portion 102.In addition, in transistor 159, it is used as the of source electrode One terminal is connect with the Second terminal as gate electrode, and the third terminal for being used as drain electrode is connect with wiring 190.In transistor In 160, the first terminal for being used as source electrode is connect with the Second terminal as gate electrode, is used as the third terminal and crystalline substance of drain electrode The first terminal of body pipe 159 connects.In transistor 161, it is used as the first terminal of source electrode and the second end for being used as gate electrode Son connection, the third terminal for being used as drain electrode are connect with the first terminal of transistor 160.In transistor 162, it is used as source electrode First terminal connect with as the Second terminal of gate electrode, the first end of third terminal and transistor 161 as drain electrode Son connection.In addition, the first terminal of transistor 162 is connect with wiring 191.In addition, resistive element 176 setting wiring 190 with Between the first terminal of transistor 160 and the third terminal of transistor 161.In addition, resistive element 177 setting wiring 191 with Between the first terminal of transistor 160 and the third terminal of transistor 161.

In addition, wiring 188 for example may be used as common line or source electrode line.In addition, wiring 189,190 for example may be used as by Apply the power cord of high power supply potential VDD.In addition, wiring 191 for example may be used as the power supply for being applied in low power supply potential VSS Line.

It includes transistor 163,164,165,166 and resistive element 178,179,180 to protect circuit 106_4.In addition, protecting Protection circuit 106_4 be arranged source electrode driver 104b and be connected to source electrode driver 104b wiring 187,188,189,190, Between 191.In addition, in transistor 163, the first terminal for being used as source electrode is connect with the Second terminal as gate electrode, is used The third terminal for making drain electrode is connect with wiring 187.In transistor 164, it is used as the first terminal of source electrode and as grid electricity The Second terminal of pole connects, and the third terminal for being used as drain electrode is connect with the first terminal of transistor 163.In transistor 165, First terminal as source electrode is connect with the Second terminal as gate electrode, is used as the third terminal and transistor of drain electrode 164 first terminal connection.In transistor 166, the first terminal and the Second terminal as gate electrode that are used as source electrode connect It connects, the third terminal for being used as drain electrode is connect with the first terminal of transistor 165.In addition, the first terminal and cloth of transistor 166 Line 189 connects.In addition, the setting of resistive element 178 is between wiring 187 and wiring 188.In addition, wiring 188 is provided with resistance member Part 179, and resistive element 179 is connect with the third terminal of the first terminal of transistor 164 and transistor 165.In addition, resistance The setting of element 180 is between wiring 188 and wiring 189.

In addition, wiring 187,191 for example may be used as the power cord for being applied in low power supply potential VSS.In addition, wiring 188 Such as it may be used as common line or source electrode line.In addition, wiring 189,190 for example may be used as being applied in high power supply potential VDD's Power cord.

In addition, wiring 181 to wiring 191 be not limited to high power supply potential VDD, low power supply potential VSS shown in Fig. 3, Function shown in common line CL can also separately have scan line, signal wire, power cord, ground wire, capacitor line or public affairs With the function of line etc..

In addition, the semiconductor layer as transistor 151 to 166 possessed by protection circuit 106_1 to 106_4, preferably makes Use oxide semiconductor.Compared with the transistor for using silicon etc. as semiconductor layer, using oxide semiconductor transistor by In avalanche breakdown does not occur thus to electric field have high patience.In addition, the transistor arrangement as transistor 151 to 166, example Plane or reciprocal cross shift can such as be used.

In this way, multiple transistors and multiple resistive elements that protection circuit 106_1 to 106_4 is connected by diode are constituted. In other words, protection circuit 106_1 to 106_4 can in parallel diode combination connection transistor and resistive element come It is formed.

In addition, as shown in figure 3, protection circuit 106_1 to protection circuit 106_4 can be arranged in pixel portion 102 and grid Between driver 104a, gate drivers 104a and it is connected between the wiring of gate drivers 104a, pixel portion 102 and source electrode Between driver 104b or source electrode driver 104b and it is connected between the wiring of source electrode driver 104b.

In addition, as an example, Fig. 4 A and Fig. 4 B show to correspond to the plane of the protection circuit 106_2 illustrated by Fig. 3 Figure and the sectional view in region as resistive element.The symbol being attached in the plan view shown in Fig. 4 A is equivalent to attached in figure 3 The symbol of note.In addition, Fig. 4 B are the sectional views along the cutting line M-N of Fig. 4 A.As shown in Figure 4 A and 4 B shown in FIG., it is overlapped by removing The resistivity of the insulating layer between wiring is controlled in a part for the insulating layer of wiring, the protection electricity illustrated by present embodiment The resistive element on road may be used as the resistive element for making overcurrent successfully discharge.

In addition, Fig. 5 is the circuit diagram for showing the structure different from the protection circuit illustrated by Fig. 3.Circuit shown in Fig. 5 In figure, show transistor 155A, 156A, 157A, 158A, transistor 155B, 156B, 157B, 158B, resistive element 174A, 175A, resistive element 174B, 175B, resistive element 199, wiring 184, wiring 185 and wiring 186.In addition, shown in Fig. 5 A pair structure identical with the protection circuit 106_2 illustrated by Fig. 3 is attached identical symbol in circuit diagram.Circuit diagram shown in fig. 5 Protection circuit 106_2 as shown in figure 3 the difference is that：Configuration is equivalent to the electricity of the protection circuit 106_2 of Fig. 3 side by side Road, and resistive element 199 is set between wiring.

In addition, being 10 with resistivity¹⁰Ω cm are less than 10¹⁸Resistive element 174A, 175A, the resistive element of Ω cm 174B, 175B are compared, and the resistive element 199 included by protection circuit 106_2 shown in fig. 5 preferably has lower resistivity, I.e. 10³Ω cm are less than 10⁶Ωcm.By using the structure of circuit diagram shown in fig. 5, can inhibit to be applied to wiring Precipitous variation occurs for signal.

In this way, by the way that multiple protection circuits, pixel portion 102 and drive circuit 104 are arranged in a display device（Grid drives Dynamic device 104a, source electrode driver 104b）The patience to the overcurrent because of generations such as ESD can be further increased.Therefore, Ke Yiti For a kind of novel display device that can improve reliability.

In addition, though illustrating the example of the situation of setting protection circuit, resistive element, transistor etc. in the present embodiment Son, but embodiments of the present invention mode is not limited to this.For example, according to circumstances, protection electricity can not also be arranged Road etc..

Structure shown in present embodiment can be appropriately combined with structure shown in other embodiment and be implemented.

Embodiment 2

In the present embodiment, with reference to Fig. 6 to using vertical electric field side with the protection circuit illustrated by embodiment 1 The display device of the liquid crystal cell of formula（Also referred to as liquid crystal display device）Structure illustrate.

Display device shown in fig. 6 includes：The pixel portion 102 of display device shown in figure 1A；Drive circuit 104；With And protection circuit 106.In addition, as the part that each conductive layer is connected to each other, interconnecting piece 109 is exemplified.Interconnecting piece 109 shows Connection structure between one layer of conductive layer and the conductive layer of the second layer.This connection structure can be applied to drive circuit 104 or lead etc..

Protection circuit 106 is connect with drive circuit 104 in addition, though being exemplified in display device shown in Fig. 6 Structure, but it is not limited to this.Such as the connection protection circuit between drive circuit 104 and pixel portion 102 may be used 106 structure.

In the display device shown in present embodiment, in a pair of of substrate（Substrate 202 and substrate 252）Between accompany liquid crystal Element 268.

Liquid crystal cell 268 includes：It is formed in the conductive layer 220c of the top of substrate 202；It is formed on conductive layer 220c Liquid crystal layer 260；And it is formed in the conductive layer 258 on liquid crystal layer 260.Conductive layer 220c is used as an electricity of liquid crystal cell 268 Pole, conductive layer 258 are used as another electrode of liquid crystal cell 268.

In addition, in the present embodiment, the case where liquid crystal cell that liquid crystal cell 268 is vertical electric field mode, is said It is bright.As the liquid crystal cell of vertical electric field mode, typically for example,：TN（Twisted Nematic：Twisted-nematic） Pattern；STN（Super Twisted Nematic：Super twisted nematic）Pattern；And VA（Vertical Alignment：Vertically Orientation）Pattern.But liquid crystal cell is not limited to this, and the IPS of horizontal component of electric field mode can be used for example（In-Plane- Switching：Conversion in plane）Pattern and FFS（Fringe Field Switching：Fringe field is converted）Pattern etc..

In this way, liquid crystal display device refers to the device for including liquid crystal cell.In addition, liquid crystal display device includes that driving is multiple The driving circuit etc. of pixel.In addition, liquid crystal display device includes configuration control circuit on other substrates, power circuit, letter Number generative circuit and backlight lamp module etc., sometimes referred to as Liquid Crystal Module.

As shown in the embodiment, circuit 106 is protected by setting, the setting in liquid crystal display device can be improved in liquid Transistor in drive circuit 104 and pixel portion 102 possessed by crystal device is to the patience from external overcurrent.

For example, since there may be electrostatic for the friction treatment that is carried out when manufacturing liquid crystal cell.But it is protected by being arranged Circuit 106, which can prevent or inhibit the overcurrent generated by above-mentioned electrostatic and flow through, is formed in pixel portion 102 and drive circuit Transistor in 104.Therefore, the electrostatic breakdown of transistor is inhibited, and the high display device of reliability may be implemented.

In the following, other inscapes to display device shown in fig. 6 illustrate.

Conductive layer is formed on substrate 202（Hereinafter referred to as conductive layer 204a, 204b, 204c, 204d）.It leads Electric layer 204a is formed in protection circuit 106, and an electrode in a pair of electrodes as resistive element.Conductive layer 204b shapes At the grid of the transistor in drive circuit 104, and as driving circuit.Conductive layer 204c is formed in pixel portion 102, And the grid of the transistor as pixel circuit.Conductive layer 204d is formed in interconnecting piece 109, and is connect with conductive layer 212f.

In addition, being formed with the layer with insulating properties on substrate 202 and conductive layer 204a, 204b, 204c, 204d（Below Referred to as insulating layer 206,208）.Insulating layer 206,208 is used as the gate insulating layer and pixel portion of the transistor of drive circuit 104 The gate insulating layer of 102 transistor.In addition, insulating layer 206 also serves as the resistive element of protection circuit 106（Resistive layer）.

In addition, being formed with the layer with characteristic of semiconductor on insulating layer 208（Hereinafter referred to as semiconductor layer 210a, 210b）.Semiconductor layer 210a is formed in the position for being overlapped in conductive layer 204b, and the raceway groove of the transistor as driving circuit. In addition, semiconductor layer 210b is formed in the position for being overlapped in conductive layer 204c, and the raceway groove of the transistor as pixel circuit.

In addition, being formed with conductive layer on insulating layer 206,208 and semiconductor layer 210a, 210b（Hereinafter referred to as For conductive layer 212a, 212b, 212c, 212d, 212e, 212f）.Conductive layer 212a is used as the resistive element of protection circuit 106 Another electrode in a pair of electrodes.In addition, conductive layer 212b is electrically connected with semiconductor layer 210a, and the crystalline substance as driving circuit A side in source electrode and drain electrode possessed by body pipe.In addition, conductive layer 212c is electrically connected with semiconductor layer 210a, and as driving Another party in source electrode and drain electrode possessed by the transistor of circuit.In addition, conductive layer 212d is electrically connected with semiconductor layer 210b, And the side in source electrode and drain electrode possessed by the transistor as pixel circuit.In addition, conductive layer 212e and semiconductor layer 210b is electrically connected, and another party in source electrode and drain electrode possessed by the transistor as pixel circuit.In addition, conductive layer 212f It is formed in interconnecting piece 109, and the opening portion by being formed in insulating layer 206 and 208 is electrically connected with conductive layer 204d.

In addition, insulating layer 208, semiconductor layer 210a, 210b and conductive layer 212a, 212b, 212c, 212d, 212e, The layer with insulating properties is formed on 212f（Hereinafter referred to as insulating layer 214,216）.Insulating layer 214,216 has protection transistor Function.Especially, insulating layer 214 has the function of protecting semiconductor layer 210a, 210b.

In addition, being formed with the layer with insulating properties on insulating layer 216（Hereinafter referred to as insulating layer 218）.Insulating layer 218 is used Make planarization layer.In addition, by forming insulating layer 218, can inhibit in the conductive layer and shape for being formed in the lower section of insulating layer 218 At the issuable parasitic capacitance between the conductive layer of the top of insulating layer 218.

In addition, being formed with conductive layer on insulating layer 218（Hereinafter referred to as conductive layer 220a, 220b, 220c）.Conductive layer 220a is electrically connected by the opening portion and conductive layer 212b that are formed in a manner of insulating layer 214,216,218 It connects, and as the connection electrode for being electrically connected the conductive layer 212b of drive circuit 104 with other wirings.Conductive layer 220b passes through The opening portion formed in a manner of across insulating layer 214,216,218 is electrically connected with conductive layer 212d, and is used as pixel portion 102 Conductive layer 212d and other connection electrodes for being electrically connected of wiring.In addition, conductive layer 220c by with pass through insulating layer 214, 216, the opening portion that 218 mode is formed is electrically connected with conductive layer 212e, and the pixel electrode as pixel portion 102.In addition, leading Electric layer 220c may be used as an electrode in a pair of electrodes possessed by the liquid crystal cell of pixel circuit.

In addition, being formed with coloured layer on substrate 252（Hereinafter referred to as nonferrous layer 254）.Nonferrous layer 254 is used as colour filter Piece.Although in addition, not shown in figure 6, the screening as black matrix can also be formed in a manner of adjacent with nonferrous layer 254 Light film.In addition, not necessarily have to setting nonferrous layer 254, such as display device carry out white and black displays the case where etc. under, also may be used With using the structure for being not provided with chromatograph 254.

In addition, being formed with the layer with insulating properties on nonferrous layer 254（Hereinafter referred to as insulating layer 256）.Insulating layer 256 has There is the function of planarization layer or inhibits the impurity diffusion that nonferrous layer 254 may contain to the function of liquid crystal cell side.

In addition, being formed with conductive layer on insulating layer 256（Hereinafter referred to as conductive layer 258）.Conductive layer 258 is used Make another electrode in a pair of electrodes possessed by the liquid crystal cell of pixel circuit.In addition it is also possible to conductive layer 220a, The insulating film as alignment films is separately formed on 220b, 220c and conductive layer 258.

In addition, being formed with liquid crystal layer 260 between conductive layer 220a, 220b, 220c and conductive layer 258.In addition, liquid crystal layer 260 use sealant（It is not shown）It is sealed between substrate 202 and substrate 252.In addition, in order to inhibit from external moisture etc. Intrusion, sealant preferably contacts with inorganic material.

Alternatively, it is also possible to which spacer is arranged between conductive layer 220a, 220b, 220c and conductive layer 258 to keep liquid crystal The thickness of layer 260（Also referred to as cell gap）'s.

In addition, in the display device shown in present embodiment, pixel portion 102 and drive circuit can be formed simultaneously Transistor possessed by 104 and protection circuit 106.Therefore, protection circuit 106 can be formed without increasing manufacturing cost etc..

Embodiment 3

In the present embodiment, with reference to Fig. 7 A to Figure 12 B to the manufacturing method of the display device illustrated by embodiment 2 into Row explanation.

First, preparing substrate 202.As substrate 202, alumina silicate glass, aluminium borosilicate glass, barium borosilicic acid are used The glass materials such as salt glass.From the viewpoint of volume production, as substrate 202, it is preferable to use eighth generations（2160mm×2460mm）、 9th generation（2400mm × 2800mm or 2450mm × 3050mm）Or the tenth generation（2950mm×3400mm）Deng mother glass.Cause It can occur significantly to shrink in the case for the treatment of temperature height and processing time length for mother glass, so when using mother glass When carrying out volume production, it is preferred that at 600 DEG C hereinafter, preferably 450 DEG C at more preferably 350 DEG C of temperature below hereinafter, carry out The heat treatment of manufacturing process.

Then, conductive film is formed on substrate 202, which is processed as desirable region, conduction is consequently formed Layer 204a, 204b, 204c, 204d.In addition, mask is formed by the first composition on desirable region, and to not covered by this The region of mould covering is etched, and conductive layer 204a, 204b, 204c, 204d is consequently formed（With reference to Fig. 7 A）.

Conductive layer 204a, 204b, 204c, 204d can use the metal in aluminium, chromium, copper, tantalum, titanium, molybdenum, tungsten first Element is formed by the alloy etc. of the alloy of ingredient or the above-mentioned metallic element of combination of above-mentioned metallic element.In addition, conductive layer 204a, 204b, 204c, 204d can be with the laminated construction of single layer structure or two layers or more.For example, can enumerate in aluminium film The double-layer structure of upper stacking titanium film, is laminated the two of tungsten film at the double-layer structure that titanium film is laminated on titanium nitride film on titanium nitride film Layer structure, the on a tantalum nitride film or a tungsten nitride film double-layer structure of stacking tungsten film and stack gradually titanium film, the aluminium on the titanium film The three-decker etc. of film and titanium film thereon.In addition it is also possible to using combined aluminium and in titanium, tantalum, tungsten, molybdenum, chromium, neodymium, scandium The film of element, combined aluminium and a variety of alloy films or nitride film in above-mentioned element.In addition, conductive layer 204a, 204b, 204c, 204d can be used for example sputtering method and formed.

In addition, by above-mentioned operation, conductive layer 204a, pixel portion 102 possessed by protection circuit 106 can be had Conductive layer 204c, conductive layer 204b possessed by drive circuit 104 formed in the same plane.

Then, insulating layer 206,208 is formed on substrate 202 and conductive layer 204a, 204b, 204c, 204d（With reference to figure 7B）.

Silicon oxynitride film, silicon nitride film, pellumina etc. can be used for example in insulating layer 206, and is filled using PE-CVD It sets and insulating layer 206 is arranged with laminated or single layer.In addition, as insulating layer 206 using laminated construction, preferably It is that the silicon nitride film few using defect is arranged hydrogen release high-volume and ammonia discharges on the first silicon nitride film as the first silicon nitride film Few silicon nitride film is measured as the second silicon nitride film.As a result, the hydrogen and nitrogen being included in insulating layer 206 can be inhibited to be moved to Semiconductor layer 210a, 210b.

Insulating layer 208 can be used for example silicon oxide film, oxygen silicon nitride membrane etc., and using PE-CVD devices with lamination or Insulating layer 208 is arranged in single layer.In addition, when being continuously formed insulating layer 206 and insulating layer 208 in a vacuum, it is mixed into insulating layer The impurity at the interface between 206 and insulating layer 208 is few, so being preferred.In addition, being overlapped in the area of conductive layer 204b, 204c The insulating layer 206,208 in domain may be used as gate insulating layer, for example, it is the nitrogen of 300nm that can use thickness as insulating layer 206 SiClx film uses the oxygen silicon nitride membrane that thickness is 50nm as insulating layer 208.

Note that silicon oxynitride refers to insulating materials of the nitrogen content more than oxygen, and silicon oxynitride refers to oxygen content more than nitrogen Insulating materials.

By being used as gate insulating layer using the above structure, such as following effect can be obtained.Compared with silicon oxide film, nitrogen The relative dielectric constant of SiClx film is high, and the required thickness of equal static capacity is big in order to obtain, it is possible to physically Make gate insulating film thick-film.Therefore, the decline of the insulation pressure resistance of transistor can be inhibited.Furthermore by improving insulation pressure resistance, It can inhibit the electrostatic breakdown of transistor.

Then, semiconductor film is formed on insulating layer 208, which is processed as desirable region, thus shape At semiconductor layer 210a, 210b.In addition, mask is formed by the second composition on desirable region, and to not by the mask The region of covering is etched, and semiconductor layer 210a, 210b is consequently formed.As etching, can use dry ecthing, wet etching or Combine the etching of both sides（With reference to Fig. 8 A）.

As semiconductor layer 210a, 210b, oxide semiconductor can be used for example.As can be applied to semiconductor layer The oxide semiconductor of 210a, 210b preferably at least include comprising indium（In）, zinc（Zn）And M（Al、Ga、Ge、Y、Zr、Sn、La、 The metals such as Ce or Hf）The layer indicated with In-M-Zn oxides.Alternatively, preferably comprising the both sides of In and Zn.In addition, in order to subtract It uses the electrical characteristics of the transistor of the oxide semiconductor uneven less, preferably also includes stabilizer other than above-mentioned element （stabilizer）.

As stabilizer, gallium can be enumerated（Ga）, tin（Sn）, hafnium（Hf）, aluminium（Al）Or zirconium（Zr）Deng.In addition, as it His stabilizer, can enumerate the lanthanum of lanthanide series（La）, cerium（Ce）, praseodymium（Pr）, neodymium（Nd）, samarium（Sm）, europium（Eu）, gadolinium（Gd）、 Terbium（Tb）, dysprosium（Dy）, holmium（Ho）, erbium（Er）, thulium（Tm）, ytterbium（Yb）, lutetium（Lu）Deng.

For example, as oxide semiconductor, can use：Indium oxide, tin oxide, zinc oxide, In-Zn oxides, Sn-Zn Oxide, Al-Zn oxides, Zn-Mg oxides, Sn-Mg oxides, In-Mg oxides, In-Ga oxides, In-Ga-Zn oxygen Compound, In-Al-Zn oxides, In-Sn-Zn oxides, Sn-Ga-Zn oxides, Al-Ga-Zn oxides, Sn-Al-Zn oxidations Object, In-Hf-Zn oxides, In-La-Zn oxides, In-Ce-Zn oxides, In-Pr-Zn oxides, In-Nd-Zn oxidations Object, In-Sm-Zn oxides, In-Eu-Zn oxides, In-Gd-Zn oxides, In-Tb-Zn oxides, In-Dy-Zn oxidations Object, In-Ho-Zn oxides, In-Er-Zn oxides, In-Tm-Zn oxides, In-Yb-Zn oxides, In-Lu-Zn oxidations Object, In-Sn-Ga-Zn oxides, In-Hf-Ga-Zn oxides, In-Al-Ga-Zn oxides, In-Sn-Al-Zn oxides, In-Sn-Hf-Zn oxides, In-Hf-Al-Zn oxides.

Note that here, such as In-Ga-Zn oxides refer to the oxide for including In, Ga and Zn as main component, it is right There is no limit for the ratio of In, Ga, Zn.Alternatively, it is also possible to include the metallic element other than In, Ga, Zn.In addition, in this specification In, the film being made of In-Ga-Zn oxides is known as IGZO films.

Alternatively, it is also possible to use with InMO₃（ZnO）_m（M ＞ 0, and m is not integer）The material of expression.Note that M indicates choosing From a kind of metallic element or Determination of multiple metal elements in Ga, Fe, Mn and Co.Alternatively, it is also possible to use with In₂SnO₅（ZnO）_n（n ＞ 0, and n is integer）The material of expression.

In addition, when forming oxide semiconductor, it is preferable to use sputtering method.As sputtering method, can use RF sputtering methods, DC sputtering methods, AC sputtering methods etc..DC sputtering methods are particularly preferably used, because it can reduce the dust generated when film forming and can be with Keep thickness distribution uniform.

Here, the structure to oxide semiconductor film illustrates.

Oxide semiconductor film is roughly divided into non-single crystal oxide semiconductor film and single crystal oxide semiconductor film.On-monocrystalline Oxide semiconductor film includes CAAC-OS（C-Axis Aligned Crystalline Oxide Semiconductor：C-axis Oriented crystalline oxide semiconductor）Film, polycrystalline oxide semiconductor film, microcrystalline oxide semiconductor film and amorphous oxides are partly led Body film etc..

First, CAAC-OS films are illustrated.

CAAC-OS films are one of the oxide semiconductor films for including multiple crystallization units that c-axis is orientated.

In the transmission electron microscope of CAAC-OS films（TEM：Transmission Electron Microscope）Image In, do not observe the specific boundary between crystallization unit and crystallization unit, i.e. crystal boundary（grain boundary）.Therefore, in CAAC- In OS films, it is not easy to which generation cause is in the reduction of the electron mobility of crystal boundary.

According to the TEM image of the CAAC-OS films from the direction for being roughly parallel to sample surface（Cross sectional TEM image）Known to Metallic atom is arranged as stratiform in crystallization unit.Each metal atomic layer has the face that reflection forms CAAC-OS films（Also referred to as by shape At face）Or the convex-concave of the top surface of CAAC-OS films shape and by be parallel to CAAC-OS films be formed face or top surface in a manner of arrange Row.

On the other hand, according to the TEM image of the CAAC-OS films from the direction for being approximately perpendicular to sample surface（Plane TEM Image）Understand that metallic atom is arranged as triangle or hexagonal configuration in crystallization unit.But it is golden between different crystallization units Belong to the arrangement of atom without regularity.

By cross sectional TEM image and plane TEM image it is found that the crystallization unit of CAAC-OS films has orientation.

Note that in the present specification, " parallel " refer to the angle that two straight lines are formed be -10 ° or more and 10 ° hereinafter, because This also includes the situation that angle is -5 ° or more and 5 ° or less.In addition, " vertical " refer to two straight lines formed angle be 80 ° with Above and therefore 100 ° hereinafter, also include the situation that angle is 85 ° or more and 95 ° or less.

In addition, the size of the most crystallization unit included in CAAC-OS films is that can be contained in be shorter than 100nm on one side Cube in size.Therefore, the size for being included in the crystallization unit in CAAC-OS films sometimes is that can be contained in be shorter than on one side 10nm, the size shorter than in the cube of 5nm or shorter than 3nm.But it is included in multiple crystallization units in CAAC-OS films sometimes It is coupled and forms a big crystal region.For example, observed sometimes in plane TEM image 2500nm2 or more, 5 μm²Above or 1000μm²Above crystal region.

Use X-ray diffraction（XRD：X-Ray Diffraction）Device carries out structural analysis to CAAC-OS films.For example, Include InGaZnO when being analyzed using out-of-plane methods₄Crystallization CAAC-OS films when, in the angle of diffraction（2θ）Near 31 ° Often there is peak value.Since the peak value derives from InGaZnO₄Crystallization（009）Face, it can thus be appreciated that the crystallization in CAAC-OS films With c-axis orientation, and c-axis direction is approximately perpendicular to the direction for being formed face or top surface of CAAC-OS films.

On the other hand, it is analyzed when using the in-plane methods for making x-ray be incident on sample from a direction substantially perpendicular to the c-axis When CAAC-OS films, it is 56 ° in 2 θ and nearby occurs peak value often.The peak value derives from InGaZnO₄Crystallization（110）Face.Here, 2 θ are fixed as 56 ° nearby and using the normal line vector of sample surface as axisIt is analyzed under conditions of rotation sample.When the sample is InGaZnO₄Single crystal oxide semiconductor film when, occur six peak values.Six peak value sources In being equal to（110）The crystal plane in face.On the other hand, when the sample is CAAC-OS films, though by 2 θ be fixed as 56 ° it is attached It is carried out in the state of closeScanning can not observe specific peak value.

From the above results, in the CAAC-OS films being orientated with c-axis, although the direction of a axis and b axis is in crystallization unit Between it is different, but c-axis is both facing to the direction for the normal line vector for being parallel to the face of being formed or top surface.Therefore, in above-mentioned section TEM Each metal atomic layer for being arranged as stratiform observed in image is equivalent to the face parallel with the faces ab of crystallization.

Note that crystallization unit is formed forming CAAC-OS films or carry out the when of the Crystallizing treatment such as heating.As described above, knot Brilliant c-axis is directed parallel to the direction of the normal line vector for being formed face or top surface of CAAC-OS films.As a result, for example, working as CAAC- When the shape of OS films changes because of etching etc., what the c-axis of crystallization was not necessarily parallel to CAAC-OS films is formed face or top surface Normal line vector.

In addition, the distribution for the crystallization unit that the c-axis in CAAC-OS films is orientated can not also be uniform.For example, working as CAAC-OS films Crystallization unit when the crystalline growth generated from the adjacent top surface of CAAC-OS films is formed, sometimes adjacent top surface c-axis be orientated Crystallization unit ratio regular meeting higher than being formed near face.In addition, when adding impurity to CAAC-OS films, it is added impurity sometimes Regional metamorphism, and partially form the different region of ratio of the crystallization unit of c-axis orientation.

Note that when including InGaZnO using the analysis of out-of-plane methods₄When the CAAC-OS films of crystallization, in addition to being in 2 θ Except peak value near 31 °, also it is 36 ° in 2 θ sometimes and nearby observes peak value.2 θ, which are the peak value near 36 °, means CAAC- Contain the crystallization for not having c-axis orientation in a part for OS films.Preferably, go out when 2 θ are near 31 ° in CAAC-OS films Show peak value and peak value does not occur when 2 θ are near 36 °.

CAAC-OS films are the low oxide semiconductor films of impurity concentration.Impurity refers to hydrogen, carbon, silicon, transition metal element etc. Element other than the main component of oxide semiconductor film.Especially, the elements such as silicon are because the binding force ratio of itself and oxygen constitutes oxygen The metallic element of compound semiconductor film and the binding force of oxygen it is stronger and as from oxide semiconductor film capturing oxygen to make oxide The atomic arrangement of semiconductor film makes the principal element that crystallinity reduces in a jumble.In addition, the heavy metals such as iron or nickel, argon, titanium dioxide Carbon etc. is because of its atomic radius（Molecular radius）It is big and becoming when inside oxide semiconductor film makes oxide partly lead The atomic arrangement of body film makes the principal element that crystallinity reduces in a jumble.Note that the impurity included in oxide semiconductor film Sometimes become carrier traps or carrier occurring source.

In addition, CAAC-OS films are the low oxide semiconductor films of defect state density.For example, in oxide semiconductor film Oxygen defect becomes carrier occurring source as carrier traps or by capturing hydrogen sometimes.

It is impurity concentration is low and defect state density is low（The number of oxygen defect is few）State be known as " high-purity is intrinsic " or " real High-purity is intrinsic in matter ".The oxide semiconductor film that high-purity is intrinsic or substantial high-purity is intrinsic, which has, lacks carrier Source, therefore can have lower carrier density.Therefore, seldom there is negative threshold using the transistor of the oxide semiconductor film The electrical characteristics of threshold voltage（Also referred to as normally open characteristic）.In addition, the oxide that high-purity is intrinsic or substantial high-purity is intrinsic half Electrically conductive film has few carrier traps.Therefore, the electrical variation using the transistor of the oxide semiconductor film is small, and becomes High reliability transistor.In addition, by oxide semiconductor film carrier traps capture charge to be released need long-time, Sometimes it is acted as fixed charge.Therefore, crystalline substance high using impurity concentration and the high oxide semiconductor film of defect state density The electrical characteristics of body pipe are sometimes unstable.

In addition, in the transistor using CAAC-OS films, due to the electrical variation of the irradiation of visible light or ultraviolet light It is small.

Next, illustrating microcrystalline oxide semiconductor film.

In image when using tem observation microcrystalline oxide semiconductor film, crystallization unit can not be clearly confirmed sometimes. The size of the crystallization unit contained in microcrystalline oxide semiconductor film be mostly 1nm or more and 100nm hereinafter, or 1nm or more and 10nm or less.Especially, will be the nanocrystalline of 1nm or more and 10nm or less or 1nm or more and 3nm crystallites below with size （nc：nanocrystal）Oxide semiconductor film be known as nc-OS（nanocrystalline Oxide Semiconductor）Film.In addition, for example can not clearly confirm boundary or grain sometimes when using tem observation nc-OS films Face.

Nc-OS films are in tiny area（Such as 1nm or more and the regions below 10nm, especially 1nm or more and 3nm or less Region）In its atomic arrangement have periodically.In addition, nc-OS films do not observe crystal orientation between different crystallization units Regularity.Therefore, orientation is not observed in film entirety.So sometimes nc-OS films in certain analysis methods with amorphous Oxide semiconductor film does not have difference.For example, by wherein utilizing the XRD devices using the diameter X-ray bigger than crystallization unit When out-of-plane methods carry out structural analysis to nc-OS films, inspection does not measure the peak value for indicating crystal plane.In addition, by making It is more than the electron beam of crystallization unit with the diameter of its probe（For example, 50nm or more）Come the selective electron diffraction of the nc-OS films obtained In, observe the diffraction pattern of similar halation pattern.On the other hand, it is bordering on or is less than crystallization in the diameter by using its probe The electron beam in portion（For example, 1nm or more and 30nm or less）In the nanometer bundle electron diffraction pattern of the nc-OS films obtained, to observe To spot.In addition, in the nanometer bundle electron diffraction pattern of nc-OS films, observe as circle sometimes（It is cricoid）It is bright Spend high region.Moreover, in the nanometer bundle electron diffraction pattern of nc-OS films, it is also observed sometimes more in cricoid region A spot.

Nc-OS films are high oxide semiconductor films more regular than amorphous oxide semiconductor films.Therefore, nc-OS films Defect level density ratio amorphous oxide semiconductor films are low.But nc-OS films do not observe crystal face between different crystallization units The regularity of orientation.So the defect level density ratio CAAC-OS films of nc-OS films are high.

Note that oxide semiconductor film for example can also be partly to be led including amorphous oxide semiconductor films, oxide crystallite Two or more stack membranes in body film and CAAC-OS films.

In addition, in order to form CAAC-OS films, it is preferred to use the following conditions.

Impurity when being formed a film by reducing is mixed into, and can inhibit the destruction of the crystalline state caused by impurity.For example, can It is present in the indoor impurity of film forming to reduce（Hydrogen, water, carbon dioxide and nitrogen etc.）.Furthermore it is possible to reduce miscellaneous in film forming gas Matter.Specifically, using dew point for -80 DEG C hereinafter, preferably -100 DEG C of film forming gas below.

In addition, by increasing substrate heating temperature when film forming, sputtering particle occurs after sputtering particle reaches substrate Migration.Specifically, by substrate heating temperature be set as 100 DEG C or more and 740 DEG C hereinafter, preferably 200 DEG C or more and It forms a film in the state of 500 DEG C or less.By increasing substrate heating temperature when film forming, when flat sputtering particle reaches It when substrate, migrates on substrate, thus the flat face of sputtering particle is attached to substrate.

Preferably, by increasing the oxygen ratio in film forming gas and being optimized to electric power, when mitigation forms a film etc. Ion bulk damage.Oxygen ratio in film forming gas is set as 30vol.% or more, preferably 100vol.%.

In the following, an example as sputtering target material shows In-Ga-Zn-O compound targets.

By by InO_XPowder, GaO_YPowder and ZnO_ZPowder is mixed with defined molal quantity, and carries out pressurized treatments, so Heated under 1000 DEG C or more and 1500 DEG C of temperature below afterwards, polycrystalline In-Ga-Zn-O compound targets are consequently formed Material.In addition, X, Y and Z are any positive number.Here, the mole ratio when type and mixed-powder of powder can be according to manufactured Sputtering target material suitably change.

Then, the first heat treatment is preferably carried out.At 250 DEG C or more and 650 DEG C hereinafter, preferably 300 DEG C or more and 500 At DEG C temperature below, under the atmosphere of the oxidizing gas under inert gas atmosphere, comprising 10ppm or more or under decompression state Carry out the first heat treatment, you can.In addition, in order to fill up departing from oxygen, can also be heated under inert gas atmosphere After processing, the first heat treatment is carried out under the oxidizing gas atmosphere comprising 10ppm or more.It, can by the first heat treatment With improve for semiconductor layer 210a, 210b oxide semiconductor crystallinity, and can remove insulating layer 206,208 and The impurity such as hydrogen or water in semiconductor layer 210a, 210b.Alternatively, it is also possible in the advance for the etching for forming oxide semiconductor layer The first heating process of row.

In addition, in order to make that there are stable electrical characteristics as the transistor of raceway groove using oxide semiconductor layer, oxide is reduced Impurity concentration in semiconductor layer makes oxide semiconductor layer realize intrinsic or substantially realize that intrinsic is effective.Here, real The intrinsic carrier density for referring to oxide semiconductor layer is less than 1 × 10 in matter¹⁷/cm³, preferably shorter than 1 × 10¹⁵/cm³, more excellent Choosing is less than 1 × 10¹³/cm³State.

In addition, in oxide semiconductor layer, hydrogen, nitrogen, carbon, silicon and the metallic element other than main component are all Impurity.For example, hydrogen and nitrogen form donor energy level so that carrier density increases.In addition, in oxide semiconductor layer, silicon shape At impurity energy level.Sometimes the impurity energy level becomes trap, and the electrical characteristics of transistor is made to deteriorate.

It is intrinsic or substantially intrinsic in order to make oxide semiconductor layer realize, in the analysis using SIMS, by silicon concentration It is set at less than 1 × 10¹⁹atoms/cm³, preferably shorter than 5 × 10¹⁸atoms/cm³, more preferably less than 1 × 10¹⁸atoms/cm³。 In addition, hydrogen concentration is set as 2 × 10²⁰atoms/cm³Hereinafter, preferably 5 × 10¹⁹atoms/cm³Hereinafter, more preferably 1 × 10¹⁹atoms/cm³Hereinafter, further preferably 5 × 10¹⁸atoms/cm³Below.In addition, nitrogen concentration is set at less than 5 × 10¹⁹atoms/cm³, preferably 5 × 10¹⁸atoms/cm³Hereinafter, more preferably 1 × 10¹⁸atoms/cm³Hereinafter, further preferably It is 5 × 10¹⁷atoms/cm³Below.

In addition, when oxide semiconductor layer includes crystallization, if silicon containing hign concentration or carbon, oxide half sometimes The crystallinity of conductor layer reduces.Silicon concentration can be set as low by the crystalline reduction of oxide semiconductor layer in order to prevent In 1 × 10¹⁹atoms/cm³, preferably shorter than 5 × 10¹⁸atoms/cm³, more preferably less than 1 × 10¹⁸atoms/cm³.Furthermore it is possible to Concentration of carbon is set at less than 1 × 10¹⁹atoms/cm³, preferably shorter than 5 × 10¹⁸atoms/cm³Hereinafter, more preferably less than 1 × 10¹⁸atoms/cm³。

In addition, the pass by the oxide semiconductor layer of high purity as described above for the transistor of channel formation region State electric current (off-state current) is minimum, the off-state current drop that the channel width according to transistor can be made to be normalized As low as a few yA/ μm to a few zA/ μm.

In addition, in oxide semiconductor layer, by reducing local level's density in layer, oxide half can be used The transistor of conductor layer has stable electrical characteristics.In addition, in order to make transistor that there are stable electrical characteristics, it can be by oxide Being measured by CPM in semiconductor layer（CPM：Constant Photocurrent Method）Obtain due to local level The absorption coefficient of density is set at less than 1 × 10^-3/ cm, preferably shorter than 3 × 10^-4/cm。

Then, it is patterned on insulating layer 208 by third and forms mask, and to not lost by the region that the mask covers It carves, thus removes one of a part and the insulating layer 206,208 on interconnecting piece 109 for protecting the insulating layer 208 on circuit 106 Point.Alternatively, it is also possible to form opening portion 207a, 207b before forming semiconductor layer 210a, 210b（With reference to Fig. 8 B）.

In addition, by using multi-stage grey scale mask, mask can be formed in third composition.Multi-stage grey scale mask refers to energy Enough masks being exposed with following three rank, i.e. exposed portion, intermediate exposures part and unexposed portion.Also, it is more Grade gray scale mask is the exposed mask that penetrated light has a variety of intensity.It, can be with by carrying out single exposure and developing procedure It is formed with a variety of（It is typically two kinds）The Etching mask of thickness area.Therefore, by using multi-stage grey scale mask, Ke Yixiao Subtract the quantity of exposed mask.As multi-stage grey scale mask, half-tone mask or gray mask etc. can be enumerated.

By in third composition use multi-stage grey scale mask, can different depth directions formed opening portion 207a, 207b.Thus, it is possible to realize that insulating layer 206 is exposed in the 207a of opening portion and conductive layer 204d is revealed in the 207b of opening portion The structure gone out.In addition, the forming method of opening portion 207a, 207b are not limited to this, different masks can be used for example and carry out Composition.

The insulating layer 206,208 being formed in as a result, in pixel portion 102 and drive circuit 104 may be used as the grid of lamination Pole insulating layer.In addition, the insulating layer 206 being formed in protection circuit 106 may be used as resistive element.

Then, conductive film is formed on insulating layer 206,208, semiconductor layer 210a, 210b and conductive layer 204d, and should Conductive film is processed as desirable region, and conductive layer 212a, 212b, 212c, 212d, 212e, 212f is consequently formed.In addition, logical It crosses the 4th composition and forms mask on desirable region, and to not being etched by the region that the mask covers, be consequently formed Conductive layer 212a, 212b, 212c, 212d, 212e, 212f（With reference to Fig. 9 A）.

In addition, by above-mentioned operation, conductive layer 212a, pixel portion 102 possessed by protection circuit 106 can be had Conductive layer 212d, 212e and drive circuit 104 possessed by conductive layer 212b, 212c formed in the same plane.

Conductive layer 212a, 212b, 212c, 212d, 212e, 212f as conductive material use by aluminium, titanium, chromium, nickel, copper, The single layer structure or laminated construction of metal or alloys with these elements as their main components that yttrium, zirconium, molybdenum, silver, tantalum or tungsten are constituted. For example, can enumerate such as lower structure：The double-layer structure of titanium film is laminated in aluminium film；The double-layer structure of titanium film is laminated on tungsten film； The double-layer structure of copper film is laminated on copper-magnesium-aluminum alloy film；Aluminium film or copper film are laminated on titanium film or titanium nitride film, on it Also form the three-decker of titanium film or titanium nitride film；And aluminium film or copper film are laminated on molybdenum film or molybdenum nitride film, on it also Form the three-decker etc. of molybdenum film or molybdenum nitride film.Furthermore it is also possible to using the transparent of indium oxide, tin oxide or zinc oxide is included Conductive material.It is formed in addition, sputtering method can be used for example in conductive layer 212a, 212b, 212c, 212d, 212e, 212f.

In addition, though formed on semiconductor layer 210a, 210b in the present embodiment conductive layer 212b, 212c, 212d, 212e, but can also be arranged between insulating layer 208 and semiconductor layer 210a, 210b conductive layer 212b, 212c, 212d, 212e。

Then, with cover insulating layer 208, semiconductor layer 210a, 210b and conductive layer 212a, 212b, 212c, 212d, The mode of 212e, 212f form insulating layer 214,216（With reference to Fig. 9 B）.

In order to improve the interfacial characteristics between oxide semiconductor as semiconductor layer 210a, 210b, as insulation Layer 214 can use and wrap oxygen containing inorganic insulating material.In addition, being used as, it is preferable to use being mixed into from outside as insulating layer 216 Few material such as the impurity moisture in the oxide semiconductor of semiconductor layer 210a, 210b, can be used for example comprising nitrogen Inorganic insulating material.For example, insulating layer 214,216 can be formed using PE-CVD methods.

As an example, it is 150nm or more and 400nm silicon oxide films below, oxygen that insulating layer 214, which can use thickness, Silicon nitride film, pellumina etc., it is 150nm or more and 400nm silicon nitride films below, nitrogen that insulating layer 216, which can use thickness, Silicon oxide film etc..In the present embodiment, as insulating layer 214 using the oxygen silicon nitride membrane that thickness is 300nm, as insulating layer 216 use the silicon nitride film that thickness is 150nm.At this point, silicon nitride film is used as preventing moisture from invading semiconductor layer 210a, 210b Barrier layer.In order to improve block, the silicon nitride film is preferably formed under high-temperature, for example, it is preferable to be 100 in underlayer temperature DEG C less than substrate strain point, at more preferably 300 DEG C or more and 400 DEG C of temperature below heating formed.In addition, When being formed a film under high-temperature, oxygen is detached from from the oxide semiconductor as semiconductor layer 210a, 210b and is occurred sometimes The phenomenon that carrier concentration rises.Therefore, heating temperature is set as that the temperature of this phenomenon does not occur.

Then, insulating layer 218 is formed on insulating layer 216（0A referring to Fig.1）.

As insulating layer 218, organic material such as acrylic resin, polyimide tree with heat resistance can be used Fat, benzocyclobutane vinyl resin, polyamide-based resin, epoxy resin etc..Alternatively, it is also possible to multiple by above-mentioned material by being laminated The insulating film of formation forms insulating layer 218.By using insulating layer 218, the concave-convex planarization of transistor etc. can be made.Insulation Layer 218 can be used for example spin-coating method and be formed.

In addition, as the acrylic resin that may be used as insulating layer 218, such as it is preferable to use water imbibition in low and film De- gas componant（For example, H₂O, C, F etc.）The less material of release.

Then, it is patterned on insulating layer 218 by the 5th and forms mask, and to not lost by the region that the mask covers It carves, opening portion 219a, 219b, 219c is consequently formed（0B referring to Fig.1）.

In addition, forming opening portion 219a, 219b, 219c in a manner of reaching conductive layer 212b, 212d, 212e.

Then, conductive film is formed in a manner of filling opening portion 219a, 219b, 219c, and the conductive film is processed as institute Conductive layer 220a, 220b, 220c is consequently formed in desired region.It is covered in addition, being patterned at desirable region by the 6th and being formed Mould, and to not being etched by the region that the mask covers, conductive layer 220a, 220b, 220c is consequently formed（Referring to Fig.1 1）.

As conductive layer 220a, 220b, 220c, the conductive material with translucency can be used such as comprising tungsten oxide Indium oxide, the indium-zinc oxide comprising tungsten oxide, the indium oxide comprising titanium oxide, the indium tin oxide comprising titanium oxide, Indium tin oxide（It is expressed below as ITO）, indium-zinc oxide, add silica indium tin oxide etc..In addition, conductive layer 220a, 220b, 220c can be used for example sputtering method and formed.

By above-mentioned operation, pixel portion and drive circuit, protection electricity with transistor can be formed on substrate 202 Road.In addition, in the manufacturing process shown in present embodiment, the first to the 6th composition can be passed through, that is, same using six masks When formed transistor and protection circuit.

In the following, being illustrated to the structure formed on the substrate 252 being arranged in a manner of opposed with substrate 202.

First, preparing substrate 252.As substrate 252, the material for substrate 202 can be used.Then, in substrate 252 Upper formation nonferrous layer 254 and insulating layer 256（2A referring to Fig.1）.

As long as nonferrous layer 254 can penetrate the light of specific wavelength region, can be used for example through red wavelength The red of the light in region（R）Colour filter, through green wavelength region light green（G）Colour filter, through blue wavelength region Light blue（B）Colour filter etc..By using well known material use print process, ink-jet method, use the erosion of lithography technology Each colour filter is formed in desirable position by carving method etc..In addition, as insulating layer 256, acrylic acid can be used for example The insulating film of resinoid etc..

Then, conductive layer 258 is formed on insulating layer 256（2B referring to Fig.1）.As conductive layer 258, can use be used for The material of conductive layer 220a, 220b, 220c.

Then, liquid crystal layer 260 is formed between substrate 202 and substrate 252.It, can be with as the forming method of liquid crystal layer 260 Use distributor method（Drop method）Or the injection of capillary phenomenon injection liquid crystal is utilized after substrate 202 to be fitted to substrate 252 Method.

By above-mentioned operation, display device shown in fig. 6 can be manufactured.

In addition, present embodiment can be appropriately combined with other embodiment shown in this specification.

Embodiment 4

In the present embodiment, referring to Fig.1 3A and Figure 13 B to can be used in the pixel circuit of display device shown in figure 1A 108 structure illustrates.

In display device shown in figure 1A, pixel circuit 108 can have structure shown in Figure 13 A.

Pixel circuit 108 shown in Figure 13 A has liquid crystal cell 130, transistor 131_1 and capacity cell 133_1.

The electricity of an electrode in a pair of electrodes of liquid crystal cell 130 is suitably set according to the specification of pixel circuit 108 Position.According to the state of orientation for the data setting liquid crystal cell 130 being written into.In addition it is also possible to the every of multiple pixel circuits 108 An electrode in a pair of electrodes of one possessed liquid crystal cell 130 supplies common electric potential（Common potential）.In addition, also may be used Not with the electrode supply in a pair of electrodes of each possessed liquid crystal cell 130 of the pixel circuit 108 to each row Same current potential.

For example, the driving method as the display device for having liquid crystal cell 130 can also use following pattern：TN moulds Formula；STN mode；VA patterns；ASM（Axially Symmetric Aligned Micro-cell：Axial symmetry arranges micro unit） Pattern；OCB（Optically Compensated Birefringence：It is optical compensation curved）Pattern；FLC （Ferroelectric Liquid Crystal：Ferroelectric liquid crystal）Pattern；AFLC（AntiFerroelectric Liquid Crystal：Anti ferroelectric liquid crystal）Pattern；MVA（Multi-Domain Vertical Alignment：Multi-domain vertical alignment）Mould Formula；PVA（Patterned Vertical Alignment：Vertical orientation configuration）Pattern；IPS patterns；FFS mode；Or TBA （Transverse Bend Alignment：Transverse curvature is orientated）Pattern etc..In addition, the driving method as display device, is removed Except above-mentioned driving method, also ECB（Electrically Controlled Birefringence：Electrically conerolled birefringence） Pattern, PDLC（Polymer Dispersed Liquid Crystal：Polymer-dispersed liquid crystal）Pattern, PNLC（Polymer Network Liquid Crystal：Polymer network type liquid crystal）Pattern, host and guest's pattern etc..But it is not limited to this, as Liquid crystal cell and its type of drive can use various liquid crystal cells and type of drive.

In addition it is also possible to by including presentation blue phase（Blue Phase）Liquid crystal and chiral reagent liquid-crystal composition constitute Liquid crystal cell.Present blue phase liquid crystal fast response time, be 1msec hereinafter, and since it has optical isotropy, institute Not need orientation process, and view angle dependency is small.

In the pixel circuit 108 that m rows n-th arrange, the side in the source electrode and drain electrode of transistor 131_1 and data line DL_n is electrically connected, and another party in source electrode and drain electrode is electrically connected with another electrode in a pair of electrodes of liquid crystal cell 130.This Outside, the grid of transistor 131_1 is electrically connected with scan line GL_m.Transistor 131_1 has by becoming conducting state or cut-off State and the function that the write-in of the data of data-signal is controlled.

The wiring of an electrode and supply current potential in a pair of electrodes of capacity cell 133_1（Hereinafter referred to as current potential is supplied Line VL）Electrical connection, another electrode are electrically connected with another electrode in a pair of electrodes of liquid crystal cell 130.In addition, according to picture The specification of plain circuit 108 suitably sets the value of the current potential of current potential supply line VL.Capacity cell 133_1 is used as what storage was written into The storage of data.

For example, in the display device of the pixel circuit 108 with Figure 13 A, selected successively by gate drivers 104a The pixel circuit 108 of each row, and make transistor 131_1 that the data of data-signal be written as conducting state.

When transistor 131_1 becomes cut-off state, being entered the pixel circuit 108 of data becomes hold mode.Pass through Above-mentioned steps are carried out successively by row, can show image.

In addition, pixel circuit 108 shown in Figure 13 B have transistor 131_2, capacity cell 133_2, transistor 134 with And light-emitting component 135.

A side in the source electrode and drain electrode of transistor 131_2 and the wiring for being applied in data-signal（Hereinafter referred to as data line DL_n）Electrical connection.Also, the grid of transistor 131_2 and the wiring for being applied in grid signal（Hereinafter referred to as scan line GL_m） Electrical connection.

Transistor 131_2, which has, carries out the write-in of the data of data-signal by as on state or off state The function of control.

An electrode in a pair of electrodes of capacity cell 133_2 and the wiring for being applied in power supply（Hereinafter referred to as power supply Line VL_a）Electrical connection, another electrode are electrically connected with another party in the source electrode and drain electrode of transistor 131_2.

Capacity cell 133_2 is used as the storage for the data that storage is written into.

A side in the source electrode and drain electrode of transistor 134 is electrically connected with power cord VL_a.Also, the grid of transistor 134 It is electrically connected with another party in the source electrode and drain electrode of transistor 131_2.

A side in the anode and cathode of light-emitting component 135 is electrically connected with power cord VL_b, another party and transistor 134 Another party's electrical connection in source electrode and drain electrode.

As light-emitting component 135, organic electroluminescent device can be used for example（Also referred to as organic EL element）Deng.But It is that light-emitting component 135 is not limited to this, the inorganic EL devices being made of inorganic material can also be used.

In addition, applying high power supply potential VDD to the side in power cord VL_a and power cord VL_b, another party is applied low Power supply potential VSS.

In having the display device of pixel circuit 108 shown in Figure 13 B, selected successively using gate drivers 104a each Capable pixel circuit 108, by making transistor 131_2 that the data of data-signal be written as conducting state.

When transistor 131_2 becomes cut-off state, being entered the pixel circuit 108 of data becomes hold mode.Moreover, The magnitude of current between the source electrode and drain electrode of transistor 134, light-emitting component are flowed through according to the control of Electric potentials for the data-signal being entered 135 with the Intensity LEDs corresponding to the magnitude of current flowed through.Follow the above steps by pressing OK, image can be shown.

In addition, in this specification etc, display element, the display device as the device with display element, luminous member Various modes or various elements may be used in part and light-emitting device as the device with light-emitting component.As display member One example of part, display device, light-emitting component or light-emitting device, has contrast, brightness, reflectivity, transmissivity etc. because of electromagnetism The display media of effect and variation, such as EL（Electroluminescent）Element（Including the EL element of organic matter and inorganic matter, organic EL are first Part, inorganic EL devices）、LED（White LED, red LED, green LED, blue led etc.）, transistor（According to the crystalline substance of galvanoluminescence Body pipe）, electronic emission element, liquid crystal cell, electric ink, electrophoresis element, grating light valve（GLV）, plasma display panel （PDP）, digital micromirror device（DMD）, piezoelectric ceramics display, carbon nanotube etc..As the display device for using EL element One example, there is EL display etc..As an example of the display device for using electronic emission element, there are Field emission displays Device（FED）Or SED mode flat-type displays（SED：Surface-conduction Electron-emitter Display： Surface-conduction-electron emission display）Deng.As an example of the display device for using liquid crystal cell, there is liquid crystal display （Permeation type liquid crystal display, semi-transmission type liquid crystal display, reflection LCD, visual-type liquid crystal display, porjection type Liquid crystal display）Deng.As an example of the display device for using electric ink or electrophoresis element, there is Electronic Paper etc..

As an example of EL element, can enumerate with anode, cathode, folder EL layers between the anode and the cathode Element etc..As EL layers of an example, favorably with shining from singlet excitons（Fluorescence）Layer, using from triplet Exciton shines（Phosphorescence）Layer, including the use of from singlet excitons shine（Fluorescence）With shining from triplet exciton （Phosphorescence）Layer, formed by organic matter layer, formed by inorganic matter layer, include the layer formed by organic matter and inorganic matter, packet The layer of pbz polymer material, the layer comprising low molecule material or the layer etc. comprising high molecular material and low molecule material.However, It is not limited to this, it can use various elements as EL element.

As an example of liquid crystal cell, has and acted on come the transmission for controlling light or non-transmission using the optical modulation of liquid crystal Element.The element can be made of a pair of electrodes and liquid crystal layer.In addition, the optical modulation of liquid crystal is acted on by being applied to liquid crystal Electric field（Including transverse electric field, longitudinal electric field or inclined direction electric field）Control.In addition, specifically, as liquid crystal cell one A example can enumerate nematic liquid crystal, cholesteric phase（cholesteric）Liquid crystal, smectic liquid crystal, discotic mesogenic, thermotropic liquid crystal, Lysotropic liquid crystal, low molecular weight liquid crystal, high molecule liquid crystal, polymer dispersion type liquid crystal（PDLC）, strong dielectric liquid crystal, anti-strong dielectric liquid Crystalline substance, backbone chain type liquid crystal, side chain type high molecule liquid crystal, plasma addressed liquid（PALC）, Banana Type liquid crystal etc..

One example of the display methods as Electronic Paper, can use：The device shown using molecule（Such as light Learn anisotropy, dye molecule orientation etc.）；The device shown using particle（Such as electrophoresis, particle is mobile, particle rotation, Phase transformation etc.）；The device shown by keeping one end of film mobile；It is shown using color development/phase transformation of molecule Device；Pass through the device that the light absorption of molecule is shown；Electrons and holes are combined and are shown by self-luminous Device；Deng.Specifically, an example of the display methods as Electronic Paper, there is microcapsule-type electrophoresis, horizontal motion electricity Swimming, vertically-moving electrophoresis, spherical twisting ball, magnetic twisting ball, cylinder twisting ball mode, electrification toner, electronics granular material Material, magnetophoresis type, magnetic heat-sensitive type, electrowetting, light scattering（Transparent/gonorrhoea variation）, cholesteric liquid crystal/optical conductive layer, cholesteric phase liquid Crystalline substance, bistable metatic liquid crystal, strong dielectric liquid crystal, dichroism pigment dispersed liquid crystal type, movable film, using leuco dye Color and discoloration, photochromic, electrochromism, electro-deposition, flexible organic EL etc..However, not limited to this, as Electronic Paper and its Display methods can use various Electronic Papers and display methods.Here, by using microcapsule-type electrophoresis, migration grain can be solved The agglutination of son and precipitation.Electronic powder bulk material has high-speed response, high reflectance, wide viewing angle, low power consumption, storage etc. The advantages of.

Embodiment 5

In the present embodiment, referring to Fig.1 4A to Figure 14 D to can be used in the pixel portion 102 of display device shown in fig. 6 Structure illustrate.

Figure 14 A can be used for the vertical view of a part for the structure of the transistor of pixel portion 102, and Figure 14 B are comparable to Along the figure of the sectional view of the chain-dotted line A1-A2 of Figure 14 A.In addition, Figure 14 C can be used for the knot of the transistor of pixel portion 102 The vertical view of a part for structure, Figure 14 D are comparable to the figure of the sectional view of the chain-dotted line B1-B2 along Figure 14 C.In addition, having It is omitted by identical reference numeral and identical shade the part of function identical with the part illustrated by the above embodiment It is described in detail.

In addition, in the vertical view shown in Figure 14 A and Figure 14 C, omitted in order to avoid complicated insulating layer 206,208, 214, it 216,218 etc. is illustrated.

The transistor that can be used in pixel portion 102 shown in Figure 14 A and Figure 14 B includes：The conduction being formed on substrate 202 Layer 204a；The insulating layer 206,208 being formed on substrate 202 and conductive layer 204a；The semiconductor layer being formed on insulating layer 208 210a；And conductive layer 212d, 212e being electrically connected with semiconductor layer 210a.

In addition, being formed with insulating layer 214,216,218 above above-mentioned transistor, conductive layer 212e is by being formed in absolutely Opening portion in edge layer 214,216,218 is electrically connected with conductive layer 220c.

Between the structure and structure shown in fig. 6 the difference is that position of conductive layer 220c shown in Figure 14 A and Figure 14 B It sets.Specifically, in the structure shown in Figure 14 A and Figure 14 B, it is overlapped in the region of semiconductor layer 210a and configures in a part Conductive layer 220c.

By using structure shown in Figure 14 A and Figure 14 B, the overcurrent above the transistor in pixel portion 102 can be made It is discharged into conductive layer 220c.

The transistor that can be used in pixel portion 102 shown in Figure 14 C and Figure 14 D includes：The conduction being formed on substrate 202 Layer 204a；The insulating layer 206,208 being formed on substrate 202 and conductive layer 204a；The semiconductor layer being formed on insulating layer 208 210a；And conductive layer 212d, 212e being electrically connected with semiconductor layer 210a.

Between the structure and structure shown in fig. 6 the difference is that position of insulating layer 208 shown in Figure 14 C and Figure 14 D It sets.Specifically, in the structure shown in Figure 14 C and Figure 14 D, the side of the side end and semiconductor layer 210a of insulating layer 208 Portion is formed in roughly the same position.For example, by using mask when forming semiconductor layer 210a to one of insulating layer 208 Divide and be etched, structure shown in Figure 14 C and Figure 14 D may be implemented.

By using structure shown in Figure 14 C and Figure 14 D, such as the charge of the electrification in conductive layer 220c can be passed through Conductive layer 212e and insulating layer 206 are discharged into conductive layer 204a.

Embodiment 6

In the present embodiment, referring to Fig.1 5A to Figure 17 C to can be used as shown in Figure 1A and Figure 1B protect circuit 106 Structure illustrate.

Figure 15 A and Figure 15 B are the vertical views for the element that can be used as protection circuit 106, and Figure 15 C are comparable to along figure The figure of the sectional view of chain-dotted line C1-C2, C3-C4 of 15A, Figure 15 D are comparable to chain-dotted line D1-D2, D3-D4 along Figure 15 B Sectional view figure.

Figure 15 A and Figure 15 C show to can be used as the resistive element of protection circuit 106.In addition, shown in Figure 15 A and Figure 15 C Resistive element includes：The insulating layer 206,208 being formed on substrate 202；The semiconductor layer 210c being formed on insulating layer 208； And conductive layer 212g, 212h being electrically connected with semiconductor layer 210c.

Figure 15 B and Figure 15 D show to can be used as the resistive element of protection circuit 106.In addition, shown in Figure 15 B and Figure 15 D Resistive element includes：The insulating layer 206,208 being formed on substrate 202；The semiconductor layer 210c that is formed on insulating layer 208 and Conductive layer 212g, 212h；Be formed in insulating layer 208, semiconductor layer 210c and insulating layer 214 on conductive layer 212g, 212h, 216、218；The conductive layer 220d for being formed on insulating layer 218 and being electrically connected conductive layer 212g with semiconductor layer 210c；And The conductive layer 220e for being formed on insulating layer 218 and being electrically connected conductive layer 212h with semiconductor layer 210c.

In above-mentioned resistive element, semiconductor layer 210c can be used as resistive element.In addition, by being used as semiconductor layer 210c can control resistivity using structure shown in Figure 15 A and Figure 15 B.

In addition, Figure 16 A, Figure 16 B and Figure 16 C show to can be used as an example of the circuit structure of protection circuit 106.

Circuit structure shown in Figure 16 A includes wiring 451,452,481 and transistor 402,404.

In transistor 402, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 451.In addition, the first terminal of transistor 402 is electrically connected with wiring 481.In crystal In pipe 404, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as the third terminal of drain electrode It is electrically connected with wiring 452.In addition, the first terminal of transistor 404 is electrically connected with wiring 481.

Circuit structure shown in Figure 16 B include wiring 453,454,482,483,484 and transistor 406,408,410, 412。

In transistor 406, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 483.In addition, the first terminal of transistor 406 is electrically connected with wiring 482.

In transistor 408, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 484.In addition, the first terminal of transistor 408 is electrically connected with wiring 483.

In transistor 410, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 482.In addition, the first terminal of transistor 410 is electrically connected with wiring 483.

In transistor 412, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 483.In addition, the first terminal of transistor 412 is electrically connected with wiring 484.

Circuit structure shown in Figure 16 C includes wiring 455,456,485,486 and transistor 414,416.

In transistor 414, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 485.In addition, the first terminal of transistor 414 is electrically connected with wiring 486.

In transistor 416, the first terminal for being used as source electrode is electrically connected with the Second terminal as gate electrode, is used as leakage The third terminal of electrode is electrically connected with wiring 486.In addition, the first terminal of transistor 416 is electrically connected with wiring 485.

As the protection circuit 106 that can be used in one embodiment of the present invention, such as Figure 16 A, Figure 16 B and figure can also be used The transistor that diode as circuit structure shown in 16C connects.

In addition, in the circuit structure shown in Figure 16 A, Figure 16 B and Figure 16 C, by being used as the first end as source electrode Connection between son and the Second terminal as gate electrode can arbitrarily control resistance using structure shown in Figure 17 A to Figure 17 C Rate.

Figure 17 A show to can be used as the resistive element of protection circuit 106.In addition, resistive element shown in Figure 17 A includes： The conductive layer 204e being formed on substrate 202；The insulating layer 206,208 being formed on substrate 202 and conductive layer 204e；It is formed in Semiconductor layer 210d on insulating layer 208；The conductive layer 212i being electrically connected with semiconductor layer 210d；It is formed in insulating layer 208, half Insulating layer 214,216,218 on conductor layer 210d, conductive layer 212i；It is formed on insulating layer 218 and by semiconductor layer 210d The conductive layer 220f being electrically connected with conductive layer 204e.

Figure 17 B show to can be used as the resistive element of protection circuit 106.In addition, resistive element shown in Figure 17 B includes： The conductive layer 204e being formed on substrate 202；The insulating layer 206,208 being formed on substrate 202 and conductive layer 204e；It is formed in Semiconductor layer 210d on insulating layer 208 and conductive layer 212j；It is formed in insulating layer 208, semiconductor layer 210d and conductive layer Insulating layer 214,216,218 on 212j；It is formed on insulating layer 218 and is electrically connected conductive layer 212j with semiconductor layer 210d Conductive layer 220g；And the conductive layer for being formed on insulating layer 218 and being electrically connected conductive layer 204e with semiconductor layer 210d 220h。

Figure 17 C show to can be used as the resistive element of protection circuit 106.In addition, resistive element shown in Figure 17 C includes： The conductive layer 204e being formed on substrate 202；The insulating layer 206,208 being formed on substrate 202 and conductive layer 204e；It is formed in Semiconductor layer 210d on insulating layer 208 and conductive layer 212j；The conductive layer 212k being electrically connected with semiconductor layer 210d；It is formed in Insulating layer 214,216,218 on insulating layer 208, semiconductor layer 210d, conductive layer 212j and conductive layer 212k；It is formed in insulation The conductive layer 220i being electrically connected on layer 218 and with semiconductor layer 210d conductive layer 212i；And be formed on insulating layer 218 and The conductive layer 220j that conductive layer 212k is electrically connected with semiconductor layer 210d.

As semiconductor layer 210c, 210d for the resistive element illustrated by Figure 15 A to Figure 17 C, can use be used for The material of semiconductor layer 210a, 210b shown in the above embodiment.Alternatively, it is also possible to semiconductor layer 210a, 210b Semiconductor layer 210c, 210d are formed in the identical process of formation process.

In addition, as conductive layer 212g, 212h of the resistive element illustrated by Figure 15 A to Figure 17 C, 212i, 212j, 212k can use the material for conductive layer 212a, 212b, 212c, 212d, 212e, 212f shown in the above embodiment. In addition it is also possible to be formed in process identical with the formation process of conductive layer 212a, 212b, 212c, 212d, 212e, 212f Conductive layer 212g, 212h.

In addition, as conductive layer 220d, 220e of the resistive element illustrated by Figure 15 A to Figure 17 C, 220f, 220g, 220h, 220i, 220j can use the material for conductive layer 220a, 220b, 220c shown in the above embodiment.In addition, Conductive layer 220d, 220e can also be formed in process identical with the formation process of conductive layer 220a, 220b, 220c.

In this way, as the conductive layer for protecting circuit, the conductive layer and use of the gate electrode as transistor can be used Make the source electrode of transistor and the conductive layer of drain electrode etc..For example, protecting the structure of circuit 106 can also table shown in Figure 17 B It is shown as follows.

Shown in Figure 17 B protect circuit 106 include：The first conductive layer being formed in gate electrode on same surface（It is conductive Layer 204e）；First conductive layer（Conductive layer 204e）On the first insulating layer（Insulating layer 206,208）；It is formed in the first insulating layer （Insulating layer 206,208）It is upper and be located at and the first conductive layer（Conductive layer 204e）The oxide semiconductor layer of the position of overlapping（Half Conductor layer 210d）；Oxide semiconductor layer（Semiconductor layer 210d）On second insulating layer（Insulating layer 214,216,218）；With And second insulating layer（Insulating layer 214,216,218）On the second conductive layer（Conductive layer 220g, 220h）, wherein second is conductive Layer（Conductive layer 220g, 220h）It is being formed in second insulating layer（Insulating layer 214,216,218）In opening portion in oxide Semiconductor layer（Semiconductor layer 210d）Electrical connection.

Embodiment 7

In the present embodiment, 8A to Figure 18 D fills the display shown in figure 1A that can be used in embodiment 1 referring to Fig.1 The structure of the transistor of the pixel portion 102 and drive circuit 104 set illustrates.

Transistor includes shown in Figure 18 A：The conductive layer 204c being formed on substrate 202；It is formed in substrate 202 and conduction Insulating layer 206,208 on layer 204c；The oxide stack 211 being formed on insulating layer 208；And it is formed in insulating layer 208 And conductive layer 212d, 212e in oxide stack 211.In addition, as transistor shown in Figure 18 A, it can also use and include It is formed on the transistor, is formed in insulating layer 208 in more detail, on oxide stack 211 and conductive layer 212d, 212e The structure of insulating layer 214,216,218.

In addition, according to the type of the conductive film for conductive layer 212d, 212e, sometimes from one of oxide stack 211 Divide and capture oxygen or form mixed layer, makes to form n-type region 209 in oxide stack 211.In Figure 18 A, n-type region 209 can It can be formed in the region near the interface contacted with conductive layer 212d, 212e in oxide stack 211.In addition, n-type region 209 may be used as source region and drain region.

In addition, in the transistor shown in Figure 18 A, conductive layer 204c is used as gate electrode, and conductive layer 212d is used as source electrode Or drain electrode, conductive layer 212e are used as source electrode or drain electrode.

Note that in the transistor shown in Figure 18 A, the oxide stack 211 in the region Chong Die with conductive layer 204c is led Interval between electric layer 212d and conductive layer 212e is referred to as channel length.Note that channel formation region refers to oxide stack 211 In and the region that is clipped in conductive layer 212d and conductive layer 212e between Chong Die with conductive layer 204c.In addition, raceway groove refers in ditch The region that electric current flows mainly through in road formation area.

Here, oxide stack 211 is described in detail in 8B referring to Fig.1.

Figure 18 B are the enlarged drawings in the region of oxide stack 211 shown in Figure 18 A surrounded by dotted line.Oxide stack 211 include oxide semiconductor layer 211a and oxide skin(coating) 211b.

Oxide semiconductor layer 211a preferably includes to include at least indium（In）, zinc（Zn）And M（Al、Ga、Ge、Y、Zr、Sn、 The metals such as La, Ce or Hf）The layer indicated with In-M-Zn oxides.In addition, as oxide semiconductor layer 211a, suitably Quote the oxide semiconductor material or forming method that can be used in semiconductor layer 210a, 210b shown in the above embodiment Deng.

Oxide skin(coating) 211b is made of one or more of the element for constituting oxide semiconductor layer 211a.In addition, oxidation Nitride layer 211b is that the energy of the conduction band bottom end of the energy ratio oxide semiconductor layer 211a of its conduction band bottom end is bordering on vacuum level 0.05eV or more, 0.07eV or more, 0.1eV or more or 0.15eV or more and 2eV or less, 1eV or less, 0.5eV or less or 0.4eV Oxidation film below.At this point, when applying electric field to the conductive layer 204c as gate electrode, in oxide stack 211 Raceway groove is formed in the small oxide semiconductor layer 211a of the energy of conduction band bottom end.In other words, by oxide semiconductor layer There is oxide skin(coating) 211b between 211a and insulating layer 214, it can be in the oxide semiconductor layer not contacted with insulating layer 214 The raceway groove of transistor is formed in 211a.In addition, constituting oxygen by one or more of the element for constituting oxide semiconductor layer 211a Thus compound layer 211b interface scattering is less likely to occur between oxide semiconductor layer 211a and oxide skin(coating) 211b.Therefore, Because not hindering the movement of carrier between oxide semiconductor layer 211a and oxide skin(coating) 211b, imitated to the field of transistor Mobility is answered to be improved.In addition, not allowing to be also easy to produce interface energy between oxide semiconductor layer 211a and oxide skin(coating) 211b Grade.When having interface energy level between oxide semiconductor layer 211a and oxide skin(coating) 211b, is formed sometimes and be with the interface The different second transistor of the threshold voltage of raceway groove, makes the apparent threshold voltage of transistor change.Therefore, pass through Oxide skin(coating) 211b is set, the uneven of the electrical characteristics such as the threshold voltage of transistor can be reduced.

Oxide skin(coating) 211b includes including at least with In-M-Zn oxides（M is Al, Ti, Ga, Ge, Y, Zr, Sn, La, Ce Or Hf etc.）It indicates and the atomicity of M is than the oxide skin(coating) higher than oxide semiconductor layer 211a.Specifically, as oxide Layer 211b, using with oxide semiconductor layer 211a compared with comprising 1.5 times or more, be preferably 2 times or more, be more preferably 3 times with On high atomic number than above-mentioned element oxide skin(coating).Above-mentioned element and being bonded for oxygen are firmer than indium and being bonded for oxygen, so Have the function of inhibiting to generate oxygen defect in the oxide layer.That is compared with oxide semiconductor layer 211a, oxide skin(coating) 211b does not allow to be also easy to produce oxygen defect.

That is being including at least indium, zinc and M in oxide semiconductor layer 211a, oxide skin(coating) 211b（Al、Ti、Ga、 The metals such as Ge, Y, Zr, Sn, La, Ce or Hf）In-M-Zn oxides in the case of, when by the atomicity ratio of oxide skin(coating) 211b It is set as In：M：Zn=x₁：y₁：z₁And the atomicity of oxide semiconductor layer 211a ratio is set as In：M：Zn=x₂：y₂：z₂ When, y₁/x₁Preferably greater than y₂/x₂.By y₁/x₁It is set as y₂/x₂1.5 times or more, preferably 2 times or more, more preferably 3 times with On.At this point, in oxide semiconductor layer 211a, work as y₂For x₂It can make transistor that there are stable electrical characteristics when above.But It is to work as y₂For x₂3 times or more when transistor field-effect mobility be lower, so y₂Preferably smaller than x₂3 times.

In addition, when oxide semiconductor layer 211a is In-M-Zn oxides, as the atom number ratio of In and M, preferably For In be 25atomic% or more and M is less than 75atomic%, and more preferably In is 34atomic% or more and M is less than 66atomic%.In addition, when oxide skin(coating) 211b is In-M-Zn oxides, as the atom number ratio of In and M, preferably In is 50atomic% or more less than 50atomic% and M, more preferably In less than 25atomic% and M be 75atomic% with On.

As oxide semiconductor layer 211a and oxide skin(coating) 211b, the oxidation for including indium, zinc and gallium can be used for example Object semiconductor.Specifically, as oxide semiconductor layer 211a, In can be used：Ga：Zn=1：1：1 [atomicity ratio] In-Ga-Zn oxides, In：Ga：Zn=3：1：The In-Ga-Zn oxides of 2 [atomicity ratios] or the oxygen with composition close with its Compound, also, as oxide skin(coating) 211b, In can be used：Ga：Zn=1：3：The In-Ga-Zn oxides of 2 [atomicity ratios], In：Ga：Zn=1：6：In-Ga-Zn oxides, the In of 4 [atomicity ratios]：Ga：Zn=1：9：The In-Ga-Zn oxygen of 6 [atomicity ratios] Compound or oxide with composition close with its.

In addition, the thickness of oxide semiconductor layer 211a is set as 3nm or more and 200nm hereinafter, preferably 3nm or more And 100nm is hereinafter, more preferably 3nm or more and 50nm or less.In addition, the thickness of oxide skin(coating) 211b is set as 3nm or more And 100nm is hereinafter, preferably 3nm or more and 50nm or less.

Then, 8C and Figure 18 D illustrate the band structure of oxide stack 211 referring to Fig.1.

As an example, using the In-Ga-Zn oxides that energy gap is 3.15eV as oxide semiconductor layer 211a, Using the In-Ga-Zn oxides that energy gap is 3.5eV as oxide skin(coating) 211b.Utilize spectroscopic ellipsometers（HORIBA JOBIN The UT-300 of YVON companies manufacture）Measure energy gap.

The energy difference of the vacuum level and valence band upper end of oxide semiconductor layer 211a and oxide skin(coating) 211b（Also referred to as For ionization potential）Respectively 8eV and 8.2eV.In addition, about the energy difference between vacuum level and valence band top, utilization is ultraviolet Photoelectron spectra（UPS：Ultraviolet Photoelectron Spectroscopy）Device（The manufacture of PHI companies VersaProbe）It measures.

Therefore, the energy difference between the vacuum level and conduction band bottom end of oxide semiconductor layer 211a and oxide skin(coating) 211b （Also referred to as electron affinity）Respectively 4.85eV and 4.7eV.

A part for the band structure of oxide stack 211 is shown to Figure 18 C intention property.Here, to with oxide stack The case where silicon oxide film is arranged in the mode of 211 contacts illustrates.EcI1 shown in Figure 18 C indicates the conduction band bottom end of silicon oxide film Energy, EcS1 indicates that the energy of the conduction band bottom end of oxide semiconductor layer 211a, EcS2 indicate the conduction band of oxide skin(coating) 211b The energy of bottom end, EcI2 indicate the energy of the conduction band bottom end of silicon oxide film.In addition, in Figure 18 A, EcI1 is equivalent to insulating layer 208, in Figure 18 A, EcI2 is equivalent to insulating layer 214.

As shown in figure 18 c, in oxide semiconductor layer 211a and oxide skin(coating) 211b, the energy of conduction band bottom end does not have gesture It builds and gently changes.In other words, it may be said that the energy of conduction band bottom end continuously changes.This can be described as because of following reason： Oxide skin(coating) 211b includes the element common with oxide semiconductor layer 211a, and oxygen is in oxide semiconductor layer 211a and oxide It is moved between layer 211b, mixed layer is consequently formed.

From Figure 18 C it is found that the oxide semiconductor layer 211a of oxide stack 211 becomes trap（well）, using oxidation Channel region is formed in oxide semiconductor layer 211a in the transistor of object lamination 211.In addition, due to oxide stack 211 The energy of conduction band bottom end continuously changes, it may also be said to which oxide semiconductor layer 211a and oxide skin(coating) 211b are continuously engaged.

It, can although having near interface between oxide skin(coating) 211b and insulating layer 214 in addition, as shown in figure 18 c It can be formed due to impurity or the trap level of defect, but by the way that oxide skin(coating) 211b is arranged, oxide semiconductor can be made Layer 211a leaves with the trap level.Note that when the energy difference between EcS1 and EcS2 is small, oxide semiconductor layer sometimes The electronics of 211a crosses the energy difference and reaches trap level.Electronics is captured by trap level, and negative consolidate is generated in interfacial dielectric layer Determine charge, this causes the threshold voltage shift of transistor to positive direction.Therefore, by by the energy difference between EcS1 and EcS2 It is set as 0.1eV or more, preferably 0.15eV or more, the threshold voltage variation of transistor is reduced and transistor is made to have surely Fixed electrical characteristics, so being preferred.

The part for showing to Figure 18 D intention property the band structure of oxide stack 211, is band structure shown in Figure 18 C Version.Here, the case where to silicon oxide film is arranged in a manner of being contacted with oxide stack 211, illustrates.Figure 18 D Shown in EcI1 indicate silicon oxide film conduction band bottom end energy, EcS1 indicates the conduction band bottom end of oxide semiconductor layer 211a Energy, EcI2 indicate the energy of the conduction band bottom end of silicon oxide film.In addition, in Figure 18 A, EcI1 is equivalent to insulating layer 208, is scheming In 18A, EcI2 is equivalent to insulating layer 214.

In the transistor shown in Figure 18 A, when forming conductive layer 212d, 212e, oxide stack 211 is upper sometimes Side, i.e. oxide skin(coating) 211b are etched.But when forming oxide skin(coating) 211b, sometimes oxide semiconductor layer 211a's Top surface forms the mixed layer of oxide semiconductor layer 211a and oxide skin(coating) 211b.

For example, being In in oxide semiconductor layer 211a：Ga：Zn=1：1：The In-Ga-Zn oxides of 1 [atomicity ratio] or In：Ga：Zn=3：1：The In-Ga-Zn oxides and oxide skin(coating) 211b of 2 [atomicity ratios] are In：Ga：Zn=1：3：2 [atoms Number ratios] In-Ga-Zn oxides or In：Ga：Zn=1：6：In the case of the In-Ga-Zn oxides of 4 [atomicity ratios], with oxygen Compound semiconductor layer 211a is compared, and the content of the Ga of oxide skin(coating) 211b is more, so in the top surface of oxide semiconductor layer 211a It is likely to form the mixed layer for including more Ga compared with GaOx layers or oxide semiconductor layer 211a.

Therefore, even if oxide skin(coating) 211b can become if being etched the energy of the conduction band bottom end positioned at the sides EcI2 of EcS1 Height becomes band structure shown in Figure 18 D sometimes.

Embodiment 8

In the present embodiment, the connection of 9 pairs of display devices shown in figure 1A that can be used in embodiment 1 referring to Fig.1 The structure of portion of terminal illustrates.In addition, with the part with the identical function in part illustrated by the above embodiment by phase With reference numeral and identical shade and detailed description will be omitted.

The connecting end sub-portion 103 that can be used in display device shown in Figure 19 includes：The insulating layer being formed on substrate 202 206、208；The conductive layer 212m being formed on insulating layer 208；And it is formed in the insulating layer 214,216 on insulating layer 208.Separately Outside, the opening portion for reaching conductive layer 212m is formed in insulating layer 214,216, conductive layer 212m passes through anisotropic conductive agent 262 are electrically connected with terminal possessed by FPC264.

In addition, in connecting end sub-portion 103, sealant 266 is formed on insulating layer 216.By sealant 266, Liquid crystal layer 260 is sealed between substrate 202 and substrate 252.

In addition, as insulating layer 206,208, material shown in the above embodiment can be quoted.

In addition, conductive layer 212m can be used and is formed in the conductive layer protected in circuit 106 and drive circuit 104 The identical conductive film of 212a, 212b, 212c is formed.

Anisotropic conductive agent 262 is the resin hybrid conductive particle made to Thermocurable or Thermocurable and photo-curable Paste or sheet material solidification conductive agent.Anisotropic conductive agent 262 by light irradiate or hot press at as in Existing anisotropic conductive material.As the conducting particles for anisotropy conductive agent 262, can be used for example by film-form Metal Au, Ni, Co etc. cover the particle of spherical organic resin.

As shown in the embodiment, by the way that the one of the present invention is arranged between connecting end sub-portion 103 and drive circuit 104 The protection circuit 106 of a mode, such as drive circuit 104 can be protected to avoid by the electrostatic generated when being bonded FPC264 The influence of overcurrent Deng caused by.It is, therefore, possible to provide a kind of display device that reliability is high.

Note that the display device in this specification refers to image display device or light source（Including lighting device）.In addition, Display device further includes：The module of the connector of such as FPC or TCP is installed；There is printed wiring board in the end set of TCP Module；Or by COG modes by IC（Integrated circuit）It is mounted directly to the module of display element.

In addition, structure shown in present embodiment etc. can be appropriately combined and reality with structure shown in other embodiment It applies.

Embodiment 9

In the present embodiment, with reference to Figure 20 A to Figure 23 to can be combined with the display device of one embodiment of the present invention Touch sensor and display module illustrate.

Figure 20 A are the decomposition perspective views for the configuration example for showing touch sensor 4500, and Figure 20 B are to show touch sensor The plan view of the configuration example of 4500 electrode.In addition, Figure 21 is the sectional view for the configuration example for showing touch sensor 4500.

In the touch sensor 4500 shown in Figure 20 A and Figure 20 B, configuration is formed on substrate 4910 in X-direction On multiple conductive layers 4510 and configure multiple conductive layers 4520 in the Y direction intersected with X-direction.Figure 20 A and The plan view and multiple conductive layers 4520 for being formed with multiple conductive layers 4510 is separately depicted in touch sensor 4500 shown in Figure 20 B Plan view.

In addition, Figure 21 is the conductive layer 4510 and conductive layer 4520 of touch sensor 4500 shown in Figure 20 A and Figure 20 B The equivalent circuit diagram of cross section.As shown in figure 21, capacitance is formed in the cross section of conductive layer 4510 and conductive layer 4520 4540。

In addition, conductive layer 4510,4520 has the structure that the conductive film of multiple quadrilateral shape connects.Multiple conductive layers 4510 And multiple conductive layers 4520 are arranged in such a way that the position of the part of the quadrilateral shape of conductive film is nonoverlapping.Conductive layer in order to prevent 4510 are contacted with conductive layer 4520, and the part that conductive layer 4510 intersects with conductive layer 4520 is provided with insulating film.

In addition, Figure 22 is the conductive layer 4510 and conductive layer of touch sensor 4500 shown in definition graph 20A and Figure 20 B The sectional view of one example of the connection structure between 4520, shows conductive layer 4510 as an example（Conductive layer 4510a, 4510b、4510c）The sectional view of the part intersected with conductive layer 4520.

As shown in figure 22, conductive layer 4510 by first layer conductive layer 4510a and conductive layer 4510b and insulating layer 4810 On the conductive layer 4510c of the second layer constitute.Conductive layer 4510a is connect by conductive layer 4510c with conductive layer 4510b.It is conductive Layer 4520 is formed by the conductive film of first layer.It is formed with insulating layer in a manner of covering conductive layer 4510,4520 and electrode 4710 4820.As insulating layer 4810,4820, such as oxygen silicon nitride membrane can be formed.Alternatively, it is also possible in substrate 4910 and conductive layer The basilar memebrane being made of insulating film is formed between 4510 and electrode 4710.As basilar memebrane, such as oxygen silicon nitride membrane can be formed.

Conductive layer 4510 and conductive layer 4520 are formed by the conductive material with visible light transmission.For example, as with The conductive material of translucency has the tin indium oxide comprising silica, tin indium oxide, zinc oxide, indium zinc oxide or added with gallium Zinc oxide etc..

Conductive layer 4510a is connect with electrode 4710.Electrode 4710 is configured to the terminal being connect with FPC.With conductive layer 4510 is same, and conductive layer 4520 is also connected to other electrodes 4710.Electrode 4710 can be used for example tungsten film and be formed.

It is formed with insulating layer 4820 in a manner of covering conductive layer 4510,4520 and electrode 4710.In order to by electrode 4710 It is electrically connected with FPC, opening is formed in the insulating layer 4810 and insulating layer 4820 on electrode 4710.On insulating layer 4820, Substrate 4920 is bonded by adhesive or adhesive film etc..It is aobvious by being mounted on 4910 side of substrate by adhesive or adhesive film Show the colour filter substrate of panel, constitutes touch screen.

Then, with reference to Figure 23 to the display module of the display device of one embodiment of the present invention can be used to illustrate.

Display module 8000 shown in Figure 23 includes being connected between top covering 8001 and lower part covering 8002 The touch panel 8004 of FPC8003, the display panel 8006 for being connected to FPC8005, back light unit 8007, frame 8009, printing Substrate 8010, battery 8011.

Top covering 8001 and lower part covering 8002 can according to the size of touch panel 8004 and display panel 8006 To suitably change shape or size.

Touch panel 8004 can use the touch panel of resistive film mode or electrostatic capacity and be overlapped in display surface Plate 8006.In addition it is also possible to make the opposed substrate of display panel 8006（Seal substrate）Has the function of touch panel.In addition, Optical sensor can also be set in each pixel of display panel 8006, and be used as optical touch panel.

Back light unit 8007 has light source 8008.Light source 8008 can also be arranged in the end of back light unit 8007, and make Use light diffusing sheet.

Frame 8009 also has other than having the function of protecting display panel 8006 to be used for interdicting because of printed substrates 8010 work and the function of the electromagnetic shielding of electromagnetic wave of generating.In addition, frame 8009 has the function of heat liberation board.

Printed substrates 8010 have for the signal processing circuit of output power supply circuit, vision signal and clock signal.Make To supply power circuit the power supply of electric power, external commercial power supply not only may be used, but also the battery being separately arranged may be used 8011 power supply.When using source power supply, it is convenient to omit battery 8011.

In addition, the components such as polarizer, phase difference board, prismatic lens can also be arranged in display module 8000.

Embodiment 10

Illustrate the example of electronic equipment in the present embodiment.

Figure 24 A to Figure 24 H and Figure 25 A to Figure 25 D are the figures for showing electronic equipment.These electronic equipments may include frame Body 5000, display unit 5001, loud speaker 5003, LED light 5004, operation key 5005（Including power switch or Operation switch）, even Connecting terminal 5006, sensor 5007（It has the function of measuring following factor：Power, displacement, position, speed, acceleration, angle speed Degree, rotating speed, distance, light, liquid, magnetic, temperature, chemical substance, sound, time, hardness, electric field, electric current, voltage, electric power, radiation Line, flow, humidity, gradient, vibration, smell or infrared ray）, microphone 5008 etc..

Figure 24 A show mobile computer, which can also include switch 5009, infrared end in addition to the foregoing Mouth 5010 etc..Figure 24 B show the portable image reproduction device for having record media（Such as DVD transcribers）, this is portable Image-reproducing means can also include the second display unit 5002, record media reading part 5011 etc. in addition to the foregoing.Figure 24 C show Go out goggle type display, which can also include the second display unit 5002, support portion in addition to the foregoing 5012, earphone 5013 etc..Figure 24 D show portable game machine, which can also include note in addition to the foregoing Record media reading part 5011 etc..Figure 24 E show the digital camera with television receiving function, and the digital camera is in addition to the foregoing Can also include antenna 5014, shutter release button 5015, image receiving section 5016 etc..Figure 24 F show portable game machine, this is portable Formula game machine can also include the second display unit 5002, record media reading part 5011 etc. in addition to the foregoing.Figure 24 G show electricity Depending on receiver, which can also include tuner, image processing part etc. in addition to the foregoing.Figure 24 H show portable Formula television receiver, the portable television receiver can also include charger that can send and receive signals in addition to the foregoing 5017 etc..Figure 25 A show display, which can also include supporting table 5018 etc. in addition to the foregoing.Figure 25 B show phase Machine, the camera can also include external connection port 5019, shutter release button 5015, image receiving section 5016 in addition to the foregoing Deng.Figure 25 C show computer, which can also include indicator device 5020, external connection port in addition to the foregoing 5019, reader 5021 etc..Figure 25 D show mobile phone, which can also include sending in addition to the foregoing Portion, receiving part, the single band broadcasting for mobile phone/mobile terminal（one-segment broadcasting）Part receives Service tuner etc..

Electronic equipment shown in Figure 24 A to Figure 24 H, Figure 25 A to Figure 25 D can have various functions.For example, can have Following function：By various information（Still image, dynamic image, character image etc.）It is shown on display unit；Touch panel；Display Calendar, date or moment etc.；By using various softwares（Program）Control process；It carries out wireless communication；By using channel radio Telecommunication function is connected to various computer networks；By using wireless communication function, the transmission or reception of various data are carried out；It reads Go out the program being stored in record media or data to come that it will be shown in display units first-class.Furthermore with multiple display units In electronic equipment, there can be following function：One display unit primary display image information, and another display unit is mainly shown Text information；Alternatively, showing the image in view of parallax on a plurality of display units to show stereo-picture etc..Furthermore with In the electronic equipment of image receiving section, there can be following function：Shoot still image；Shoot dynamic image；To captured Image carries out automatic or manual correction；It stores the captured image in record media（Outside is built in camera）In；By institute It is first-class that the image of shooting is shown in display unit.Note that electronic equipment shown in Figure 24 A to Figure 24 H, Figure 25 A to Figure 25 D can have Function be not limited to the above functions, and can have various functions.

Electronic equipment described in present embodiment is characterized by having display unit used to display some information.

In the following, illustrating the example application of display device.

Figure 25 E show display device and the building example being integrated is arranged.Figure 25 E include framework 5022, display unit 5023, as the remote control of operation portion 5024, loud speaker 5025 etc..Display device is attached to building in a manner of wall-mounted It is interior and larger space can not needed and be arranged.

Figure 25 F show that another example being integrated is arranged in display device and building in building.Display module 5026 are integrated with the setting of bathroom 5027, and the people having a bath can watch display module 5026.

Note that in the present embodiment, the example as building enumerates wall, bathroom.But present embodiment is not limited to In this, display device can also be installed to various buildings.

In the following, showing display device and the moving body example being integrated is arranged.

Figure 25 G are shown the figure of display device setting to the example in automobile.Display module 5028 is mounted to automobile Car body 5029, and can show the work of car body as needed or from vehicle body or externally input information.In addition, There can be navigation feature.

Figure 25 H are the figures for the example for showing display device and trip's passenger plane setting being integrated.Figure 25 H are to show inciting somebody to action The figure of shape when use when display module 5031 is arranged the ceiling 5030 above the seat of trip's passenger plane.Show mould Block 5031 is incorporated into ceiling 5030 by hinge part 5032, and can be watched using the flexible passenger of hinge part 5032 aobvious Show module 5031.There is display module 5031 operation by passenger to show the function of information.

Note that in the present embodiment, automobile, aircraft are exemplified as moving body, but not limited to this, can also be arranged In various moving bodys such as motorcycle, automatic carriage（Including automobile, bus etc.）, electric car（Including single track, railway etc.） And ship etc..

Note that in this specification etc, one can be taken out in the drawing or text chapter described in some embodiment Partly constitute a mode of invention.Therefore, in the case where record is described the drawing or text chapter of a certain part, it is taken out The content of the drawing or text chapter of a part is also to be disclosed as a mode of invention, so one of invention can be constituted Mode.Thus, for example, can one or more active members recorded（Transistor, diode etc.）, wiring, passive device （Capacity cell, resistive element etc.）, conductive layer, insulating layer, semiconductor layer, organic material, inorganic material, component, device, work In the drawing or text chapter of method, manufacturing method etc., takes out part of it and constitute a mode of invention.For example, can be from tool Have N number of（N is integer）Circuit element（Transistor, capacity cell etc.）M are taken out in the circuit diagram of composition（M is integer, M ＜ N） Circuit element（Transistor, capacity cell etc.）To constitute a mode of invention.It as other examples, can be from N number of（N It is integer）M are taken out in the sectional view that layer is constituted（M is integer, M ＜ N）Layer constitutes a mode of invention.Furthermore as Other examples, can be from N number of（N is integer）M are taken out in the flow chart that element is constituted（M is integer, M ＜ N）Element is come Constitute a mode of invention.

In addition, in this specification etc, having been recorded in the drawing or text chapter described in some embodiment at least one In the case of specific example, those of ordinary skill in the art can easily understand that a fact is exactly can be by Above-mentioned specific example exports the upperseat concept of the specific example.Therefore, the drawing or text chapter described in some embodiment In recorded at least one specific example in the case of, the mode of the upperseat concept of the specific example also as invention is public It opens, and may be constructed a mode of invention.

In addition, in this specification etc, the content at least described in attached drawing（It can also be the part in attached drawing）As One mode of invention is disclosed, and may be constructed a mode of invention.Therefore, as long as content is on the books in the accompanying drawings, Even if mode if describing the content without using article as invention is disclosed, and may be constructed a mode of invention. Similarly, it takes out a mode of the attached drawing of the part in attached drawing also as invention to be disclosed, and may be constructed the one of invention A mode.

Embodiment 11

In addition, though the conductive film or semiconductor film disclosed in the above embodiment can utilize sputtering method or plasma CVD method is formed, but can also utilize hot CVD（Chemical Vapor Deposition：Chemical vapor deposition）Method etc. other Method is formed.As the example of thermal cvd, MOCVD can be enumerated（Metal Organic Chemical Vapor Deposition：Metalorganic chemical vapor deposition）Method or ALD（Atomic Layer Deposition：Atomic layer deposition） Method.

Since thermal cvd is the film build method without using plasma, has and do not generate because of plasma damage institute The advantages of caused defect.

The film forming using thermal cvd can be carried out in the following manner：Unstrpped gas and oxidant are supplied to processing simultaneously Interior will handle indoor pressure and be set as atmospheric pressure or decompression, it is made to react in substrate proximity or on substrate.

Furthermore it is possible to carry out the film forming using ALD method in the following manner：To handle indoor pressure be set as atmospheric pressure or Decompression, will introduce process chamber successively, and repeatedly introduce gas in the order for the unstrpped gas of reaction.For example, passing through Switch each switch valve（Also referred to as fast valve）Two or more unstrpped gas is sequentially supplied in process chamber.It is more in order to prevent Kind of unstrpped gas mixing, for example, introducing while introducing the first unstrpped gas or later inert gas（Argon or nitrogen etc.）Deng so After introduce the second unstrpped gas.Note that when introducing the first unstrpped gas and inert gas simultaneously, inert gas is used as carrier Gas, furthermore it is possible to introduce inert gas while introducing the second unstrpped gas.Alternatively, it is also possible to utilize vacuum suction will First unstrpped gas is ejected instead of introducing inert gas, then introduces the second unstrpped gas.First unstrpped gas is attached to lining Bottom surface forms first layer, and the second unstrpped gas introduced later reacts with the first layer, and thus the second layer is layered in first Film is formed on layer.Gas by the order repeated multiple times is introduced until obtaining desirable thickness, it can be with shape At the good film of step coverage.Since the thickness of film can be carried out according to the number of gas is introduced repeatedly in order It adjusts, therefore, ALD method can accurately adjust thickness and be suitable for forming miniature FET.

Can be formed using thermal cvd such as mocvd method or ALD method conductive film disclosed in embodiment illustrated above or Semiconductor film uses trimethyl indium, trimethyl gallium and zinc methide for example, when forming In-Ga-Zn-O films.In addition, front three The chemical formula of base indium is In（CH₃）₃.In addition, the chemical formula of trimethyl gallium is Ga（CH₃）₃.In addition, the chemical formula of zinc methide For Zn（CH₃）₂.In addition, being not limited to said combination, triethyl-gallium can also be used（Chemical formula is Ga（C₂H₅）₃）Instead of front three Base gallium, and use diethyl zinc（Chemical formula is Zn（C₂H₅）₂）Instead of zinc methide.

For example, when using tungsten film is formed using the film formation device of ALD method, WF is introduced repeatedly successively₆Gas and B₂H₆Gas Initial tungsten film is formed, then introduces WF simultaneously₆Gas and H₂Gas forms tungsten film.Note that can also be replaced using SiH4 gases B₂H₆Gas.

For example, when using oxide semiconductor film such as In-Ga-Zn-O films are formed using the film formation device of ALD method, successively In is introduced repeatedly（CH₃）₃Gas and O₃Gas forms In-O layers, then introduces Ga simultaneously（CH₃）₃Gas and O₃Gas forms GaO Layer introduces Zn simultaneously later（CH₃）₂Gas and O₃Gas forms ZnO layer.Note that the sequence of these layers is not limited to above-mentioned example Son.In addition it is also possible to mix these gases to form such as In-Ga-O layers, In-Zn-O layers, Ga-Zn-O layers of mixed compound layer Deng.Although note that can also use be bubbled using inert gases such as Ar obtained from H₂O gases replace O₃Gas, but it is excellent Choosing uses the O not comprising H₃Gas.Alternatively, it is also possible to use In（C₂H₅）₃Gas replaces In（CH₃）₃Gas.In addition it is also possible to Use Ga（C₂H₅）₃Gas replaces Ga（CH₃）₃Gas.In can also be used（C₂H₅）₃Gas replaces In（CH₃）₃Gas.In addition, Zn can also be used（CH₃）₂Gas.

Symbol description

102 pixel portions

103 connecting end sub-portions

104 drive circuits

104a gate drivers

104b source electrode drivers

106 protection circuits

106_1 protects circuit

106_2 protects circuit

106_3 protects circuit

106_4 protects circuit

108 pixel circuits

109 interconnecting pieces

110 wirings

112 wirings

114 resistive elements

130 liquid crystal cells

131_1 transistors

131_2 transistors

133_1 capacity cells

133_2 capacity cells

134 transistors

135 light-emitting components

140 substrates

142 conductive layers

144 insulating layers

146 insulating layers

148 conductive layers

151 transistors

152 transistors

153 transistors

154 transistors

155 transistors

155A transistors

155B transistors

156 transistors

156A transistors

156B transistors

157 transistors

157A transistors

157B transistors

158 transistors

158A transistors

158B transistors

159 transistors

160 transistors

161 transistors

162 transistors

163 transistors

164 transistors

165 transistors

166 transistors

171 resistive elements

172 resistive elements

173 resistive elements

174 resistive elements

174A resistive elements

174B resistive elements

175 resistive elements

175A resistive elements

175B resistive elements

176 resistive elements

177 resistive elements

178 resistive elements

179 resistive elements

180 resistive elements

181 wirings

182 wirings

183 wirings

184 wirings

185 wirings

186 wirings

187 wirings

188 wirings

189 wirings

190 wirings

191 wirings

199 resistive elements

202 substrates

204a conductive layers

204b conductive layers

204c conductive layers

204d conductive layers

204e conductive layers

206 insulating layers

The opening portions 207a

The opening portions 207b

208 insulating layers

209 n-type regions

210a semiconductor layers

210b semiconductor layers

210c semiconductor layers

210d semiconductor layers

211 oxide stacks

211a oxide semiconductor layers

211b oxide skin(coating)s

212a conductive layers

212b conductive layers

212c conductive layers

212d conductive layers

212e conductive layers

212f conductive layers

212g conductive layers

212h conductive layers

212i conductive layers

212j conductive layers

212k conductive layers

212m conductive layers

214 insulating layers

216 insulating layers

218 insulating layers

The opening portions 219a

The opening portions 219b

The opening portions 219c

220a conductive layers

220b conductive layers

220c conductive layers

220d conductive layers

220e conductive layers

220f conductive layers

220g conductive layers

220h conductive layers

220i conductive layers

220j conductive layers

252 substrates

254 nonferrous layers

256 insulating layers

258 conductive layers

260 liquid crystal layers

262 anisotropic conductive agents

264 FPC

266 sealants

268 liquid crystal cells

402 transistors

404 transistors

406 transistors

408 transistors

410 transistors

412 transistors

414 transistors

416 transistors

451 wirings

452 wirings

453 wirings

454 wirings

455 wirings

456 wirings

481 wirings

482 wirings

483 wirings

484 wirings

485 wirings

486 wirings

4500 touch sensors

4510 conductive layers

4510a conductive layers

4510b conductive layers

4510c conductive layers

4520 conductive layers

4540 capacitances

4710 electrodes

4810 insulating layers

4820 insulating layers

4910 substrates

4920 substrates

5000 frameworks

5001 display units

5002 display units

5003 loud speakers

5004 LED light

5005 operation keys

5006 connection terminals

5007 sensors

5008 microphones

5009 switches

5010 infrared ports

5011 record media reading parts

5012 support portions

5013 earphones

5014 antennas

5015 shutter release buttons

5016 image receiving sections

5017 chargers

5018 supporting tables

5019 external connection ports

5020 indicator devices

5021 readers

5022 frameworks

5023 display units

5024 remote controls

5025 loud speakers

5026 display modules

5027 bathrooms

5028 display modules

5029 car bodies

5030 ceilings

5031 display modules

5032 hinge parts

8000 display modules

8001 top coverings

8002 lower part coverings

8003 FPC

8004 touch panels

8005 FPC

8006 display panels

8007 back light units

8008 light sources

8009 frames

8010 printed substrates

8011 batteries.

Claims

1. a kind of display device, including：

Pixel portion；

Drive circuit in the outside of the pixel portion is set；And

The protection circuit of a pair of electrodes is electrically connected and included with one or both in the pixel portion and the drive circuit,

Wherein, the pixel portion includes transistor,

The transistor includes：

Include the first insulating layer of nitrogen and silicon；And

Include the second insulating layer of oxygen, nitrogen and silicon,

Also, the protection circuit includes first insulating layer between the pair of electrode.

2. display device according to claim 1,

The wherein described transistor includes gate electrode, source electrode and drain electrode,

An electrode in the pair of electrode is formed in the same plane with the gate electrode,

And another electrode in the pair of electrode is formed in the same plane with the source electrode or the drain electrode.

3. display device according to claim 1, wherein the resistivity of first insulating layer is greater than or equal to 10¹⁰Ωcm And it is less than 10¹⁸Ωcm。

4. display device according to claim 1, wherein the semiconductor layer of the transistor is oxide semiconductor layer.

5. display device according to claim 4, wherein the semiconductor layer includes the oxide including at least indium and zinc Semiconductor.

6. display device according to claim 1,

Wherein, the transistor includes gate insulating layer,

Also, the gate insulating layer includes：

Include first insulating layer of nitrogen and silicon；And

Include the second insulating layer of oxygen, nitrogen and silicon.

7. display device according to claim 1, wherein first insulating layer is silicon nitride film.

8. display device according to claim 1 further includes multiple pixel electrodes,

Wherein, the multiple pixel electrode is configured to rectangular,

Also, a pixel electrode in the multiple pixel electrode is electrically connected with the transistor.

9. a kind of display device, including：

Pixel portion；

Drive circuit in the outside of the pixel portion is set；And

Wherein, the pixel portion includes：

It is configured to rectangular pixel electrode, each of the pixel electrode is electrically connected with transistor,

The transistor includes：

Gate electrode；

Gate insulating layer on the gate electrode；

Semiconductor layer on the gate insulating layer；

Source electrode and drain electrode on the semiconductor layer,

The gate insulating layer includes：

Include the first insulating layer of nitrogen and silicon；And

Include the second insulating layer of oxygen, nitrogen and silicon,

10. display device according to claim 9,

An electrode in wherein the pair of electrode is formed in the same plane with the gate electrode,

11. display device according to claim 9, wherein the resistivity of first insulating layer is greater than or equal to 10¹⁰Ω Cm and be less than 10¹⁸Ωcm。

12. display device according to claim 9, wherein the semiconductor layer is oxide semiconductor layer.

13. display device according to claim 9, wherein the semiconductor layer includes the oxide including at least indium and zinc Semiconductor.

14. display device according to claim 9, wherein first insulating layer is silicon nitride film.

15. a kind of display device, including：

Pixel portion；And

The protection circuit of a pair of electrodes is electrically connected and included with the pixel portion,

Wherein, the pixel portion includes transistor,

The transistor includes gate insulating layer,

The gate insulating layer includes：

Include the first insulating layer of nitrogen and silicon；And

Include the second insulating layer of oxygen, nitrogen and silicon,

16. display device according to claim 15, further includes：

Gate electrode under the gate insulating layer；

Semiconductor layer on the gate insulating layer；

Source electrode and drain electrode on the semiconductor layer,

Wherein, an electrode in the pair of electrode is formed in the same plane with the gate electrode,

Also, another electrode in the pair of electrode is formed in the same plane with the source electrode or the drain electrode.

17. display device according to claim 15, wherein the resistivity of first insulating layer is greater than or equal to 10¹⁰Ω Cm and be less than 10¹⁸Ωcm。

18. display device according to claim 15, the transistor further includes semiconductor layer.

19. display device according to claim 18, wherein the semiconductor layer includes the oxidation including at least indium and zinc Object semiconductor.

20. display device according to claim 15, wherein first insulating layer is silicon nitride film.

21. a kind of display device, including：

Pixel portion；And

Wherein, the pixel portion includes transistor,

The transistor includes gate insulating layer and oxide semiconductor layer,

The gate insulating layer includes：

The first insulating layer including silicon nitride；And

Include the second insulating layer of any of silica and silicon oxynitride,

22. display device according to claim 21, wherein the resistivity of first insulating layer is greater than or equal to 10¹⁰Ω Cm and be less than 10¹⁸Ωcm。

23. display device according to claim 21, wherein the oxide semiconductor layer includes at least indium and zinc.

24. display device according to claim 21 further includes multiple pixel electrodes,

Wherein, the multiple pixel electrode is configured to rectangular,