CN103854860B - A kind of ageing method of high temperature resistant tantalum capacitor - Google Patents
A kind of ageing method of high temperature resistant tantalum capacitor Download PDFInfo
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Abstract
The invention discloses the ageing method of a kind of high temperature resistant tantalum capacitor, it comprises the steps of 2 5V constant voltage under (1), room temperature；(2), power at 80 90 DEG C, apply voltage 1UR；(3), power at 120 130 DEG C, apply voltage 0.62 0.65UR；(4), power at 190 205 DEG C, apply voltage 0.55 0.6UR；(5), power at 225 230 DEG C, apply voltage 0.45 0.52UR；(6), natural cooling；(7), rise again pressure.The invention has the beneficial effects as follows: use high temp. sectional to apply different voltage and carry out ageing, substantially reduce existing burning-in period, both the purpose of ageing had been reached, in turn ensure that reliability and life-span, ensure that tantalum capacitor remains able to work long-term and stably when 230 DEG C of high temperature, improve the service life of capacitor, fill up the blank of more than 200 DEG C tantalum capacitor ageing technology.
Description
Technical field
The present invention relates to the ageing technology of a kind of high temperature resistant tantalum capacitor, particularly relate to a kind of tantalum electrolytic capacitor ageing method under 200-230 DEG C of hot environment, belong to capacitor technology field.
Background technology
Electrolysis condenser, as common electronic component, is widely used in communication, space flight and the many-side such as military project, submarine cable and advanced electronics, civil electric appliance, television set, play in the line energy storage, filter, bypass, couple, the effect such as power supply, phase inversion.The tantalum capacitor using conventional fabrication processes to produce can steady operation below 125 DEG C.But for deep drilling well, survey and deep space work electronic equipment for, minimizing day by day and technological progress due to subsurface boring natural resources deposit, the drilling depth of industry starts to deepen, also begin to drill in the area of geothermic gradient higher (globally thermal gradient is generally the 25 DEG C/km degree of depth) simultaneously, these severe missile silo temperature are more than 200 DEG C, and pressure is more than 25kpsi.
Existing tantalum capacitor causes thermorunaway to be lost efficacy because ambient temperature is too high, thus causes electronic equipment, instrument and meter output waveform distortion, circuit normally to work.And equipment fault can cause high shutdown cost, at the drill string of underground number mile operation if there is electronic component failures, needing the time of more than one day to overhaul and change, operation complicated deep water offshore drilling platforms averagely needs to spend 1,000,000 dollars every day.Therefore the electronic devices and components that exploitation is exclusively used under high-temperature severe environment are the most imperative.
Summary of the invention
It is an object of the invention to provide the ageing method of a kind of high temperature resistant tantalum capacitor, overcome the deficiencies in the prior art, improve the service life of capacitor, make up the blank of more than 200 DEG C tantalum capacitor ageing technology.
It is an object of the invention to be achieved through the following technical solutions: the ageing method of a kind of high temperature resistant tantalum capacitor, it comprises the steps of
(1), the tantalum capacitor after encapsulation is at room temperature used 2-5V constant voltage；
(2), the intensification pressure stage I: the two ends of the tantalum capacitor after encapsulation are applied at a temperature of 80-90 DEG C DC voltage, and power on 12-24h, and the voltage of applying is 1UR, wherein, URFor tantalum capacitor rated voltage；
(3), the intensification pressure stage II: the two ends of tantalum capacitor apply at a temperature of 120-130 DEG C DC voltage, and power on 1-3h, and the voltage of applying is 0.62-0.65UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor apply at a temperature of 190-205 DEG C DC voltage, and power on 1.5-3h, and the voltage of applying is 0.55-0.6UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor apply at a temperature of 225-230 DEG C DC voltage, and power on 1.5-2h, and the voltage of applying is 0.45-0.52UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 5-12h；
(7), pressure of rising again: the two ends of the tantalum capacitor after cooling are applied at a temperature of 80-90 DEG C DC voltage, and power on 12-24h, and the voltage of applying is 1UR。
The voltage applied in described course of exerting pressure is less than the safe handling voltage of capacitor.
The essence of ageing process is: the semi-finished product after encapsulated are applied DC voltage, the process of the most dynamically ripening, makes capacitor recover its intrinsic electrical property by pressurization so that it is to possess the condition used in dynamic electron circuit.Meanwhile, non-solid electrochemical capacitor also with " spontaneous recovery " effect, can re-form under being stepped up suitable applied voltage, partially damaged dielectric oxide film fault be carried out polishing reparation, the most automatically recovers its ability to work.
High temperature aging can improve the resistant to elevated temperatures characteristic of dielectric oxide film so that capacitor continues dynamic ripening under electric field action, and the oxide-film that high temperature secondary is formed middle generation carries out fault reparation again, reduces high-temperature severe environment to dielectric impact.
The beneficial effects of the present invention is: use high temp. sectional to apply different voltage and carry out ageing, substantially reduce existing burning-in period, both the purpose of ageing had been reached, in turn ensure that reliability and life-span, ensure that tantalum capacitor remains able to work long-term and stably when 230 DEG C of high temperature, improve the service life of capacitor, fill up the blank of more than 200 DEG C tantalum capacitor ageing technology.
Detailed description of the invention
Further describe technical scheme below in conjunction with embodiment, but claimed scope is not limited to described.
Embodiment 1
The ageing method of a kind of high temperature resistant tantalum capacitor, as a example by CAXH type 50V160 μ F, it comprises the steps of
(1), by the tantalum capacitor after encapsulation at room temperature by 3V constant voltage 1.5h；
(2), the intensification pressure stage I: the two ends of the tantalum capacitor after encapsulation are applied at a temperature of 85 DEG C DC voltage, and power on 12h, and the voltage of applying is 1UR, wherein, URFor tantalum capacitor rated voltage 50V；
(3), the intensification pressure stage II: the two ends of tantalum capacitor apply at a temperature of 125 DEG C DC voltage, and power on 1h, and the voltage of applying is 0.63UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor apply at a temperature of 200 DEG C DC voltage, and power on 2.5h, and the voltage of applying is 0.58UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor apply at a temperature of 230 DEG C DC voltage, and power on 1.5h, and the voltage of applying is 0.48UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 6h；
(7), pressure of rising again: the two ends of the tantalum capacitor after cooling are applied at a temperature of 85 DEG C DC voltage, and power on 12h, and the voltage of applying is 1UR。
Embodiment 2
The ageing method of a kind of high temperature resistant tantalum capacitor, with CAXH type 75V180 μ F, it comprises the steps of
(1), by the tantalum capacitor after encapsulation at room temperature by 5V constant voltage 1.5h；
(2), the intensification pressure stage I: the two ends of the tantalum capacitor after encapsulation are applied at a temperature of 85 DEG C DC voltage, and power on 12h, and the voltage of applying is UR, wherein, URFor tantalum capacitor rated voltage 75V；
(3), the intensification pressure stage II: the two ends of tantalum capacitor apply at a temperature of 125 DEG C DC voltage, and power on 1.5h, and the voltage of applying is 0.63UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor apply at a temperature of 200 DEG C DC voltage, and power on 2h, and the voltage of applying is 0.58UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor apply at a temperature of 230 DEG C DC voltage, and power on 2h, and the voltage of applying is 0.52UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 6h；
(7), pressure of rising again: the two ends of the tantalum capacitor after cooling are applied at a temperature of 85 DEG C DC voltage, and power on 12h, and the voltage of applying is UR。
Embodiment 3
The ageing method of a kind of high temperature resistant tantalum capacitor, it comprises the steps of
(1), by the tantalum capacitor after encapsulation at room temperature by 4V constant voltage 1.5h；
(2), the intensification pressure stage I: the two ends of the tantalum capacitor after encapsulation are applied at a temperature of 80 DEG C DC voltage, and power on 24h, and the voltage of applying is 1UR, wherein, URFor tantalum capacitor rated voltage；
(3), the intensification pressure stage II: the two ends of tantalum capacitor apply at a temperature of 120 DEG C DC voltage, and power on 3h, and the voltage of applying is 0.65UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor apply at a temperature of 190 DEG C DC voltage, and power on 1.5h, and the voltage of applying is 0.55UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor apply at a temperature of 225 DEG C DC voltage, and power on 2h, and the voltage of applying is 0.45UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 5h；
(7), pressure of rising again: the two ends of the tantalum capacitor after cooling are applied at a temperature of 80 DEG C DC voltage, and power on 24h, and the voltage of applying is 1UR。
Embodiment 4
The ageing method of a kind of high temperature resistant tantalum capacitor, it comprises the steps of
(1), by the tantalum capacitor after encapsulation at room temperature by 4V constant voltage 1.5h；
(2), the intensification pressure stage I: the two ends of the tantalum capacitor after encapsulation are applied at a temperature of 90 DEG C DC voltage, and power on 16h, and the voltage of applying is 1UR, wherein, URFor tantalum capacitor rated voltage；
(3), the intensification pressure stage II: the two ends of tantalum capacitor apply at a temperature of 130 DEG C DC voltage, and power on 2h, and the voltage of applying is 0.62UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor apply at a temperature of 205 DEG C DC voltage, and power on 3h, and the voltage of applying is 0.6UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor apply at a temperature of 230 DEG C DC voltage, and power on 1.5h, and the voltage of applying is 0.48UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 12h；
(7), pressure of rising again: the two ends of the tantalum capacitor after cooling are applied at a temperature of 90 DEG C DC voltage, and power on 16h, and the voltage of applying is 1UR。
Embodiment 5
The ageing method of a kind of high temperature resistant tantalum capacitor, it comprises the steps of
(1), by the tantalum capacitor after encapsulation at room temperature by 2V constant voltage 1.5h；
(2), the intensification pressure stage I: the two ends of the tantalum capacitor after encapsulation are applied at a temperature of 85 DEG C DC voltage, and power on 12h, and the voltage of applying is 1UR, wherein, URFor tantalum capacitor rated voltage；
(3), the intensification pressure stage II: the two ends of tantalum capacitor apply at a temperature of 125 DEG C DC voltage, and power on 2h, and the voltage of applying is 0.64UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor apply at a temperature of 200 DEG C DC voltage, and power on 2.5h, and the voltage of applying is 0.57UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor apply at a temperature of 230 DEG C DC voltage, and power on 2h, and the voltage of applying is 0.5UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 10h；
(7), pressure of rising again: the two ends of the tantalum capacitor after cooling are applied at a temperature of 85 DEG C DC voltage, and power on 12h, and the voltage of applying is 1UR。
Choose the capacitor of 50V160 μ F specification be respectively adopted existing ageing method and according to implement 1 carry out high temperature aging after, therefrom 5 capacitors of extraction carry out Contrast of Electrical Parameter, and comparing result is shown in Table one.
Electrical quantity after two kinds of ageing method tests of table one 50V160 μ F
Choosing the capacitor of 75V180 μ F specification and be respectively adopted existing ageing method and after embodiment 2 carries out high temperature aging, therefrom 5 capacitors of extraction carry out Contrast of Electrical Parameter, and comparing result is shown in Table two.
Electrical quantity after two kinds of ageing method tests of table two 75V180 μ F
From the experimental data of table one and table two it can be seen that the concordance of its unit for electrical property parameters of product after high temperature aging is better than prior art, it is greatly shortened burning-in period simultaneously, the production cycle can be reduced under not affecting product quality premise.
Claims (2)
1. the ageing method of a high temperature resistant tantalum capacitor, it is characterised in that it comprises the steps of
(1), will encapsulation after tantalum capacitor at room temperature, under 2V-5V constant voltage value constant voltage 1.5h；
(2), the intensification pressure stage I: by the two ends of the tantalum capacitor after encapsulation the temperature of 80-90 DEG C
Lower applying DC voltage, power on 12-24h, and the voltage of applying is 1UR, wherein, URFor tantalum capacitor volume
Determine voltage；
(3), the intensification pressure stage II: the two ends of tantalum capacitor are applied at a temperature of 120-130 DEG C
DC voltage, power on 1-3h, and the voltage of applying is 0.62-0.65UR；
(4), the intensification pressure stage III: the two ends of tantalum capacitor are applied at a temperature of 190-205 DEG C
DC voltage, power on 1.5-3h, and the voltage of applying is 0.55-0.6UR；
(5), the intensification pressure stage IV: the two ends of tantalum capacitor are applied at a temperature of 225-230 DEG C
DC voltage, power on 1.5-2h, and the voltage of applying is 0.45-0.52UR；
(6), natural cooling: tantalum capacitor is at room temperature recovered 5-12h；
(7), rise again pressure: the two ends of the tantalum capacitor after cooling are applied directly at a temperature of 80-90 DEG C
Stream voltage, power on 12-24h, and the voltage of applying is 1UR。
The ageing method of high temperature resistant tantalum capacitor the most according to claim 1, it is characterised in that: described
Course of exerting pressure in the voltage that applies less than the safe handling voltage of capacitor.
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| CN104535864B (en) * | 2014-12-29 | 2017-10-03 | 中国振华（集团）新云电子元器件有限责任公司 | A kind of non-solid tantalum capacitor ageing method |
| CN104624525B (en) * | 2015-02-04 | 2016-10-05 | 南京绿索电子科技有限公司 | The process flow control system of the seasoned and automatic testing, sorting of super capacitor |
| CN109326448B (en) * | 2018-10-12 | 2021-01-19 | 福建国光电子科技有限公司 | Method for producing solid electrolytic capacitor |
| CN111383843B (en) * | 2020-03-05 | 2021-08-27 | 深圳市必事达电子有限公司 | Electrolytic capacitor aging method and system and automatic aging machine |
| CN114284073B (en) * | 2021-12-29 | 2023-06-20 | 贵州师范学院 | Method for improving service life qualification rate of high-voltage high-capacity electrolytic capacitor |
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| CN203242502U (en) * | 2013-05-08 | 2013-10-16 | 佛山市三水日明电子有限公司 | Solid electrolyte aluminum electrolytic capacitor |
| CN103310981A (en) * | 2013-07-03 | 2013-09-18 | 中国振华（集团）新云电子元器件有限责任公司 | Producing method for full-tantalum-gas sealed capacitor |
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