CN204886746U - Power generation facility based on environment difference in temperature - Google Patents

Power generation facility based on environment difference in temperature Download PDF

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Publication number
CN204886746U
CN204886746U CN201520424903.2U CN201520424903U CN204886746U CN 204886746 U CN204886746 U CN 204886746U CN 201520424903 U CN201520424903 U CN 201520424903U CN 204886746 U CN204886746 U CN 204886746U
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China
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module
voltage
pressure boost
low pressure
temperature difference
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Expired - Fee Related
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CN201520424903.2U
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Chinese (zh)
Inventor
王欣
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Nanjing Institute of Railway Technology
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Nanjing Institute of Railway Technology
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Abstract

The utility model discloses a power generation facility based on environment difference in temperature, including the thermoelectric module that connects gradually, low pressure boost module, high pressure boost module, constant current constant voltage module and energy memory, thermoelectric semiconductor device connects including terminal surface and terminal, terminal surface and external environment contact, thermoelectric semiconductor device connects current transmission to low pressure boost module through this temperature difference generate current and through the terminal, be provided with amplifier circuit in the low pressure boost module, this amplifier circuit can carry out the one -level vary voltage with the electric current that thermoelectric module transmitted, make the boosting, the current transmission of low pressure boost module after with the one -level vary voltage is to high -pressure boost module, high pressure boost module carries out the second grade vary voltage with the electric current, make voltage further rise, be provided with the stabiliser in the constant current constant voltage module, after the electric current steady voltage of stabiliser after with the second grade vary voltage, charge to energy memory. The utility model has the advantages of can be through poor electric energy, the simple structure of gaining of ambient temperature.

Description

A kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference
Technical field
The utility model relates to the technical field of heat energy utilization, is specifically related to a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference.
Background technology
Natural how place all also exists temperature difference, can be the source that the mankind obtain energy.If can design a kind of device, temperature difference used, be translated into electric energy, this device can expect that be used widely in the field such as power taking, Waste Heat Reuse in the wild.Compared to other Blast Furnace Top Gas Recovery Turbine Unit (TRT), this device has clean, and noiselessness pollutes, and unharmful substance discharges, efficiently, the life-span is long, sturdy and durable, and reliability is high, the series of advantages such as simple and stable, meet environment protection requirement, have important strategic importance to the sustainable development of national economy.
Utility model content
Technical problem to be solved in the utility model is for the above-mentioned state of the art, and provides a kind of under the condition with temperature difference, realizes obtaining electric energy, structure simply based on the Blast Furnace Top Gas Recovery Turbine Unit (TRT) of circumstance of temperature difference by ambient temperature differences.
The utility model solves the problems of the technologies described above adopted technical scheme:
A kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference, wherein: comprise the electrothermal module connected successively, low pressure boost module, high voltage step-up module, constant current constant voltage module and energy storage device, electrothermal module is made up of several thermoelectric semiconductor device be arranged in parallel, thermoelectric semiconductor device includes end face and clamped nipple, end face contacts with external environment, this external environment is at less than 90 DEG C and there is temperature difference with end face Celsius, thermoelectric semiconductor device by this temperature difference generation current and by clamped nipple by current delivery to low pressure boost module, amplifying circuit is provided with in low pressure boost module, the electric current that electrothermal module can transmit by this amplifying circuit carries out one-level transformation, voltage is raised, low pressure boost module is by paramount for the current delivery after one-level transformation voltage rise die block, electric current is carried out secondary transformation by high voltage step-up module, voltage is raised further, pressurizer is provided with in constant current constant voltage module, pressurizer is by after the electric current voltage stabilizing after secondary transformation, energy storage device is charged.
For optimizing technique scheme, the concrete measure taked also comprises:
The end face of above-mentioned thermoelectric semiconductor device is divided into upper surface and lower surface, on upper surface, interval is laid with metallic conduction sheet, on lower surface, interval is laid with lower metallic conduction sheet, each upper metallic conduction sheet is all respectively connected with a P type semiconductor element and a N type semiconductor element, and this P type semiconductor element and N type semiconductor element are connected with adjacent two lower metallic conduction sheets respectively, clamped nipple is drawn from the upper metallic conduction sheet or lower metallic conduction sheet being positioned at two ends.
Above-mentioned low pressure boost module is directly connected with energy storage device.
Above-mentioned low pressure boost module, when zero load input 0.5V to 1.2V, produces 5.5V output voltage, allows output voltage to have the deviation of maximum 0.5V.
When above-mentioned high voltage step-up module zero load inputs 4V-6V, produce 8V-24V output voltage, allow output voltage to have the deviation of maximum 0.5V.
When above-mentioned constant current constant voltage module zero load inputs 8V-24V, constant voltage exports 6V-24V, allows output voltage to have the deviation of maximum 0.5V.
A kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference of the present utility model is under the condition of extraneous temperature in degree Celsius less than 90 DEG C, and realize obtaining electric energy by ambient temperature differences, temperature difference preferably can remain on 70 DEG C to 35 DEG C.This device is made up of five major parts such as electrothermal module, low pressure boost module, high voltage step-up module, constant current constant voltage module and energy storage devices.The temperature difference of two end faces by its end face and environmental exposure that is solid-state or gaseous form, and shows by thermoelectric semiconductor device in the form of voltage, produces voltage at lead-out terminal.The energy produced due to electrothermal module be small with time become, therefore this device adopt multiple device parallel way and after connect the structure of passive low-voltage boost module.Passive low-voltage boost module adopts passive four port networks, and have the effect of impedance transformation and elementary boosting, its output is not more than 1 volt.The output that passive high voltage boost module produces with low voltage voltage module inputs for it, can need to do further voltage amplification process according to load.This device adds constant voltage module after high-pressure modular, is connected with load by constant voltage module, and guarantee system has constant voltage and exports when load variations.This device is passive, need except the bias voltage that low-voltage module input arranges 3 volts except only, other parts do not need additional power supply, its maximum output voltage is designed to 24 volts, when length × wide=40 × 40 millimeter comparatively eight parallel runnings of group thermoelectric semiconductor device time, maximum output current 100 milliampere, can drive the devices such as cpu fan.Device can charge for himself bias supply.If semi-conductor thermoelectric device specification increases, quantity in parallel increases, and the maximum output current of device is also by corresponding increase.This device can utilize the field such as power taking, Waste Heat Reuse in the wild well.
Accompanying drawing explanation
Fig. 1 is structured flowchart of the present utility model;
Fig. 2 is the structural representation of thermoelectric semiconductor device;
Fig. 3 is the cut-away view of thermoelectric semiconductor device.
Wherein, Reference numeral is: electrothermal module 1, low pressure boost module 2, high voltage step-up module 3, constant current constant voltage module 4, energy storage device 5, thermoelectric semiconductor device 6, end face 61, clamped nipple 62, upper metallic conduction sheet 63, lower metallic conduction sheet 64.
Embodiment
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
A kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference, wherein: comprise the electrothermal module 1 connected successively, low pressure boost module 2, high voltage step-up module 3, constant current constant voltage module 4 and energy storage device 5, electrothermal module 1 is made up of several thermoelectric semiconductor device 6 be arranged in parallel, thermoelectric semiconductor device 6 includes end face 61 and clamped nipple 62, end face 61 contacts with external environment, this external environment is at less than 90 DEG C and there is temperature difference with end face 61 Celsius, thermoelectric semiconductor device 6 also passes through clamped nipple 62 by current delivery to low pressure boost module 2 by this temperature difference generation current, amplifying circuit is provided with in low pressure boost module 2, the electric current that electrothermal module 1 can transmit by this amplifying circuit carries out one-level transformation, voltage is raised, low pressure boost module 2 is by paramount for the current delivery after one-level transformation voltage rise die block 3, electric current is carried out secondary transformation by high voltage step-up module 3, voltage is raised further, pressurizer is provided with in constant current constant voltage module 4, pressurizer is by after the electric current voltage stabilizing after secondary transformation, energy storage device 5 is charged.
In embodiment, the end face 61 of thermoelectric semiconductor device 6 is divided into upper surface and lower surface, on upper surface, interval is laid with metallic conduction sheet 63, on lower surface, interval is laid with lower metallic conduction sheet 64, each upper metallic conduction sheet 63 is all respectively connected with a P type semiconductor element and a N type semiconductor element, and this P type semiconductor element and N type semiconductor element are connected with adjacent two lower metallic conduction sheets 64 respectively, clamped nipple 62 is drawn from the upper metallic conduction sheet 63 or lower metallic conduction sheet 64 being positioned at two ends.
In embodiment, low pressure boost module 2 is directly connected with energy storage device 5.
In embodiment, low pressure boost module 2, when zero load input 0.5V to 1.2V, produces 5.5V output voltage, allows output voltage to have the deviation of maximum 0.5V.
In embodiment, during high voltage step-up module 3 zero load input 4V-6V, produce 8V-24V output voltage, allow output voltage to have the deviation of maximum 0.5V.
In embodiment, during constant current constant voltage module 4 zero load input 8V-24V, constant voltage exports 6V-24V, allows output voltage to have the deviation of maximum 0.5V.
Using method of the present utility model is as follows: when having the larger temperature difference between the external world and thermoelectric semiconductor device, during as Waste Heat Reuse, indoor and outdoor has the larger temperature difference, under there is the situations such as the larger temperature difference outside Che Neiche, use Blast Furnace Top Gas Recovery Turbine Unit (TRT) of the present utility model, the end face 61 of thermoelectric semiconductor device 6 is contacted with external environment, therebetween temperature official post thermoelectric semiconductor device 6 produces thermoelectric effect, thermoelectric semiconductor device 6 generation current, thermoelectric semiconductor device 6 passes through clamped nipple 62 by current delivery to low pressure boost module 2, high voltage step-up module 3, carry out boosting process, then seamless is carried out through constant current constant voltage module 4, obtain the electric current of voltage stabilization, energy storage device 5 is charged.Energy storage device 5 can drive the devices such as cpu fan.
Below be only preferred implementation of the present utility model, protection range of the present utility model be not only confined to above-described embodiment, all technical schemes belonged under the utility model thinking all belong to protection range of the present utility model.It should be pointed out that for those skilled in the art, not departing from the some improvements and modifications under the utility model principle prerequisite, protection range of the present utility model should be considered as.

Claims (6)

1. the Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference, it is characterized in that: comprise the electrothermal module (1) connected successively, low pressure boost module (2), high voltage step-up module (3), constant current constant voltage module (4) and energy storage device (5), described electrothermal module (1) is made up of several thermoelectric semiconductor device (6) be arranged in parallel, described thermoelectric semiconductor device (6) includes end face (61) and clamped nipple (62), described end face (61) contacts with external environment, this external environment is at less than 90 DEG C and there is temperature difference with end face (61) Celsius, thermoelectric semiconductor device (6) also passes through clamped nipple (62) by current delivery to low pressure boost module (2) by this temperature difference generation current, amplifying circuit is provided with in described low pressure boost module (2), the electric current that electrothermal module (1) is transmitted can be carried out one-level transformation by this amplifying circuit, voltage is raised, described low pressure boost module (2) is by paramount for the current delivery after one-level transformation voltage rise die block (3), electric current is carried out secondary transformation by described high voltage step-up module (3), voltage is raised further, pressurizer is provided with in described constant current constant voltage module (4), pressurizer is by after the electric current voltage stabilizing after secondary transformation, energy storage device (5) is charged.
2. a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference according to claim 1, it is characterized in that: the end face (61) of described thermoelectric semiconductor device (6) is divided into upper surface and lower surface, on described upper surface, interval is laid with metallic conduction sheet (63), on described lower surface, interval is laid with lower metallic conduction sheet (64), each described upper metallic conduction sheet (63) is all respectively connected with a P type semiconductor element and a N type semiconductor element, and this P type semiconductor element and N type semiconductor element respectively metallic conduction sheet (64) lower to adjacent two be connected, described clamped nipple (62) is drawn from the upper metallic conduction sheet (63) or lower metallic conduction sheet (64) being positioned at two ends.
3. a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference according to claim 2, is characterized in that: described low pressure boost module (2) is directly connected with energy storage device (5).
4. a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference according to claim 3, is characterized in that: described low pressure boost module (2), when zero load input 0.5V to 1.2V, produces 5.5V output voltage, allows output voltage to have the deviation of maximum 0.5V.
5. a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference according to claim 4, is characterized in that: when described high voltage step-up module (3) zero load inputs 4V-6V, produce 8V-24V output voltage, allow output voltage to have the deviation of maximum 0.5V.
6. a kind of Blast Furnace Top Gas Recovery Turbine Unit (TRT) based on circumstance of temperature difference according to claim 5, is characterized in that: when described constant current constant voltage module (4) zero load inputs 8V-24V, constant voltage exports 6V-24V, allows output voltage to have the deviation of maximum 0.5V.
CN201520424903.2U 2015-06-19 2015-06-19 Power generation facility based on environment difference in temperature Expired - Fee Related CN204886746U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108644745A (en) * 2018-06-20 2018-10-12 深圳市漫反射照明科技有限公司 A kind of energy saving heat recovery system and its energy saving heat recovery method
CN109855172A (en) * 2018-12-13 2019-06-07 北京建筑大学 A kind of indoor heating monitoring system based on thermo-electric generation
CN110445418A (en) * 2019-07-03 2019-11-12 中国船舶重工集团公司第七一九研究所 A kind of multi-source cascade triple channel micro-energy acquisition generation platform taking electricity based on the temperature difference

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108644745A (en) * 2018-06-20 2018-10-12 深圳市漫反射照明科技有限公司 A kind of energy saving heat recovery system and its energy saving heat recovery method
CN109855172A (en) * 2018-12-13 2019-06-07 北京建筑大学 A kind of indoor heating monitoring system based on thermo-electric generation
CN110445418A (en) * 2019-07-03 2019-11-12 中国船舶重工集团公司第七一九研究所 A kind of multi-source cascade triple channel micro-energy acquisition generation platform taking electricity based on the temperature difference

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151216

Termination date: 20160619

CF01 Termination of patent right due to non-payment of annual fee