CN103854815A - Electrode assembly, macromolecule PTC (positive temperature coefficient) thermistor and preparation method thereof - Google Patents
Electrode assembly, macromolecule PTC (positive temperature coefficient) thermistor and preparation method thereof Download PDFInfo
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- CN103854815A CN103854815A CN201210518257.7A CN201210518257A CN103854815A CN 103854815 A CN103854815 A CN 103854815A CN 201210518257 A CN201210518257 A CN 201210518257A CN 103854815 A CN103854815 A CN 103854815A
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Abstract
The invention discloses an electrode assembly, a macromolecule PTC (positive temperature coefficient) thermistor and a preparation method thereof. The electrode assembly comprises two electrodes, wherein each electrode comprises external structural conductive terminals and at least one internal structural conductive terminal which is connected onto the external structural conductive terminal, the external structural conductive terminals are oppositely arranged, the internal structural conductive terminal is arranged between the external structural conductive terminals, and at least one pair of two adjacent internal structural conductive terminals are arranged on different electrodes to form a macromolecular thermistor layer. The preparation method of the macromolecular PTC thermistor comprises the following steps of arranging the electrode assembly into a mold, injecting macromolecular PTC material raw material particles into the mold through an injection molding process, maintaining the pressure, cooling, stripping the mold, and carrying out cross-linking in a radiative manner. By adopting the macromolecular PTC thermistor, the normal-temperature resistance is reduced, and the current carrying capability at the normal temperature can be improved.
Description
Technical field
The present invention relates to macromolecular thermosensitive resistor field, relate in particular to a kind of electrode assemblie, thermal-sensitive electric resistance device and preparation method thereof.
Background technology
The essential characteristic of high molecular PTC (Positive Temperature Coefficient: positive temperature coefficient) thermal-sensitive electric resistance device is: in certain temperature range, the resistivity of himself can increase with the rising of temperature; Especially in very little range of temperature, there is the sudden change of approximately 1,000,000 times near resistivity its critical temperature.
High molecular PTC material is crystallization or the hypocrystalline polymer composite of filled conductive particle normally.These crystallizations or semi-crystalline polymer comprise polyethylene, polypropylene, Kynoar, polytrifluorochloroethylene and their copolymer.Conducting particles comprises carbon black, graphite, carbon fiber and metal dust, wherein said metal dust comprises as silver powder, copper powder, aluminium powder, nickel powder, stainless steel powder etc., in US Patent No. 4388607, US4514620, US4774024 and US4910389, have open disclosure, these disclosed contents are as being included in the present patent application with reference to data.The manufacturing process of its high molecular PTC material is: first polymer, carbon black and other filler are made to masterbatch with banbury or extruder blend granulation, and then that masterbatch is mixing again, be squeezed into by extruder the sheet material that thickness is 0.1-5.0mm; Sheet material is cut into length and width and is the rectangle of 100-300mm, put into temperature and be the vulcanizing press of 130-190 DEG C, with the pressure sintering metal electrode that all compound last layer thickness is 10-100 μ m on sheet material two sides; With punch press, above-mentioned sheet material punching is become again to the chip of certain specification, by electron beam irradiation, inserted sheet, the technique such as seal and make thermal-sensitive electric resistance device.
It has been generally acknowledged that high molecular PTC thermistor part changes its conductivity by thermal expansion and obtains resistance temperature characteristic, make electric current be difficult to flow or flow, it generally draws respectively 2 electrodes at 2 different parts of the electroconductive member being made up of electric conductive polymer.As the electric conductive polymer of one of material of electroconductive member, for example, polyethylene or fluorine series plastics, after mixing with carbon black, radiate to be cross-linked by high-energy ray and form conductive polymer.In the inside of electric conductive polymer, under normal temperature environment, carbon black particle is connected and exists, therefore form good conductivity.But in the time that ambient temperature rises, hot physical expansion occurs electric conductive polymer, now, the interparticle distance of carbon black is from expansion, and conductive path interrupts, and causes resistance value sharply to increase.Above-mentioned high molecular PTC thermistor part is set in circuit, and in the time there is overcurrent in circuit, conducting polymer causes thermal expansion because of the spontaneous heating that Joule heat causes, the inner carbon black particle spacing comprising expands, and conductive path interrupts; Cut off circuit, between electrode, not when current flowing, spontaneous heating stops, conducting polymer generation thermal contraction, and carbon black particle spacing shortens, and conductive path forms again, thereby turns back to the state that can switch on.Thereby the high molecular PTC thermistor part effect that can be used as sensing element and produce reaction and play switch according to the interelectrode size of current of flowing through.
The high molecular PTC thermistor part being made up of electric conductive polymer is widely known by the people as circuit protecting element.In order to improve the characteristic of high molecular PTC thermistor part, people are carrying out various new research always continuously.Since its application, industry is making great efforts to improve the current lead-through amount of element in unit are or volume always.There are under normal circumstances two class modes to improve: by selecting the better conductive filler of conductivity, as metal dust; Or by stack design mode, become two layers or multilayer to improve conducting area etc. element design.
Early stage high molecular PTC thermistor part generally uses carbon black as conductive filler, makes in recent years the research day animando of conductive agent with metal dust or high conductivity ceramic powders.If the use nickel powder being disclosed is as the research of electroconductive stuffing, and in Chinese patent literature (CN1909123A), disclose the high molecular PTC material of use titanium carbide ceramic as conductive agent in patent documentation (Japanese kokai publication hei 5-47503 communique).Compare carbon black and have more excellent conductivity due to metal dust or ceramic powders, use the new unit resistivity of these conductive agent manufacturings to decline to a great extent, thereby in degree once, improved the current lead-through performance of device.
The method that further improves current lead-through ability is that device is designed to sandwich construction.Such design is mainly reflected in and need to be installed to substrate as in the surface attaching type device on printed circuit board (PCB).These design in US Patent No. 5831510, US5852397 and US5864281, and having given disclosure in international publication number WO94/01876 and WO95/08176, the manufacture method of multilayer PTC element has given disclosure in International Patent Publication No. WO 99/53505 and WO01/20619.
The manufacturing process of high molecular PTC normally first makes with banbury or extruder blend the masterbatch mixing by polymer, carbon black and other filler, then masterbatch is pushed by mill; Or be extruded into and there is certain thickness PTC preform plate by extruding dies.The PTC preform plate obtaining is made to the sandwich of iron plate/teflon sheet/thickness adjustment sheet+PTC preform plate/teflon sheet/iron plate, they are overlapping, under vulcanizing press, with precompressed under 180-200 DEG C, the pressure of 1MPa 3 minutes, then carry out the formal pressurization of 4 minutes with 3MPa.Then under the press with recirculated cooling water, pressurize 4 minutes with 3MPa, make the polymer PTC plate of sheet.Then this PTC plate and metal electrode etc. are made to the sandwich of iron plate/teflon sheet/metal electrode/thickness adjustment sheet+PTC plate/metal electrode/teflon sheet/iron plate, they are overlapping, under 180-200 DEG C, the pressure of 5MPa, carry out the pressurization of 4 minutes with above-mentioned vulcanizing press.Then under the press with recirculated cooling water, pressurize 4 minutes with 3MPa, be formed in the polymer PTC device of composition metal electrode in polymer PTC plate both side surface.Above-mentioned polymer PTC device is irradiated under gamma ray to the radiation dose of 20Mrad, then with punch press, above-mentioned sheet material punching is become to the chip of certain specification, by inserted sheet, the technique such as seal and make thermistor.
Normal current ducting capacity refers to that electric current can not cause that by thermal-sensitive electric resistance device resistance heating presents the current value of high-impedance state when normal temperature (25 DEG C).Although by the ongoing effort of industry, the current lead-through ability of high molecular PTC thermistor part has had the once raising of degree, also has suitable room for improvement compared to the requirement of industrial circle.More aobvious outstanding in this voltage application being confined to more than 60V, for example, for 250V voltage, industry only can provide the product of about 500mA specification at present, has greatly limited its application.The extensive application of industrial circle need to provide and reach tens of even up to a hundred amperes of normal operating currents in 250V electric pressure.According to the manufacturing condition of current high molecular PTC thermistor part, cannot realize the design of high current specification like this and produce.
Summary of the invention
Technical problem solved by the invention has been to overcome the defect that normal current ducting capacity is low, voltage withstand capability is poor, repetition stability is bad of existing thermal-sensitive electric resistance device, and a kind of electrode assemblie, thermal-sensitive electric resistance device and preparation method thereof are provided.Thermal-sensitive electric resistance device of the present invention has large, the baroque feature of volume, has the effective conducting area in huge inside, thereby its first aspect, has reduced normal temperature resistance, thereby increases substantially normal temperature current lead-through ability; Second aspect, electrode interior embedding structure completes in immersion resinite the interior turning part of circuit, thereby has greatly suppressed to cause in thermistor course of action the ability of electrode creeping discharge, makes the voltage withstand capability of product occur large increase; The third aspect, the three-diemsnional electrode structural limitations that thermistor is inner complicated condensate and interelectrode slide displacement in product course of action, helped the recovery of resistance after action, make product repetition stability also have to a certain degree raising.
The present invention solves the problems of the technologies described above by the following technical programs:
The invention provides a kind of electrode assemblie for high molecular PTC thermistor part and comprise two electrodes, each electrode includes one and outreaches structure conducting terminal and at least one internal structure conducting terminal outreaching on structure conducting terminal that is connected to, the described structure conducting terminal that outreaches is arranged relatively, outreaches between structure conducting terminal and at least one pair of adjacent two internal structure conducting terminal lays respectively on different electrodes, is used to form a macromolecular thermosensitive resistor layer described in described internal structure conducting terminal is arranged at.
Wherein, described electrode assemblie also can comprise the insulation screening that at least one fixed electrode is used.
Wherein, preferably, in described insulation screening, have two holes at least, be inserted into insulation screening fixed electrode for internal structure conducting terminal; Or, on described internal structure conducting terminal, have two holes at least, insert internal structure conducting terminal fixed electrode for the screening of insulating.
Wherein, described insulation screening is preferably one or more in thermosetting resin, inorganic ceramic and steel plate paper; Described thermosetting resin is preferably one or more in unsaturated polyester resin, epoxy resin, phenolic resins, melmac and furane resins, preferred epoxy.
Wherein, preferably, the described metal forming that outreaches at least one surface soldered in structure conducting terminal and described internal structure conducting terminal and have rough surface, is tightly linked for described high molecular PTC thermistor part electrode assemblie and thermistor material.
Wherein, described metal forming is preferably one or more in the Copper Foil of Copper Foil, aluminium foil, nickel foil and plating nickel on surface, and better is the Copper Foil of plating nickel on surface.
Wherein, the described structure conducting terminal that outreaches can be the conventional electric conducting material using in this area, be preferably metal and/or alloy, one or more that better is in aluminium, zinc, iron, nickel, silver, red copper, brass, stainless steel and alloy thereof, especially better is red copper and/or brass, and best is brass.The described length that outreaches structure conducting terminal and height are required to determine by device performance, the thickness that outreaches structure conducting terminal is preferably 0.1-5mm, is especially preferably 0.2-4mm, and that better is 0.25-3mm, that especially better is 0.3-2mm, and that best is 0.5-1mm.
Outreach structure conducting terminal directly and external circuit UNICOM, the load bearing component as internal structure conducting terminal again in high molecular PTC thermistor part inside, it will bear moderate finite deformation pressure on the one hand in process of production, in product use procedure, to gather on the other hand the electric current on each inner conductive terminal, thereby be to have higher mechanical strength to have again higher current carrying capacity to its requirement.
Wherein, described internal structure conducting terminal can be the conventional electric conducting material using in this area, be preferably metal and/or alloy, one or more that better is in aluminium, zinc, iron, nickel, silver, red copper, brass, stainless steel and alloy thereof, especially better is red copper and/or brass, and best is brass.The length of described internal structure conducting terminal and height are required to determine by device performance, the thickness of internal structure conducting terminal is preferably 0.1-4mm, is especially preferably 0.15-3mm, and that better is 0.2-2mm, that especially better is 0.25-1.5mm, and that best is 0.3-0.5mm.
Internal structure conducting terminal is responsible for carrying the internal current of high molecular PTC thermistor part and it being conducted to external circuit by external structure conducting terminal, it will bear certain rock deformation pressure on the one hand in process of production, in product use procedure, to carry on the other hand the internal current of high molecular PTC thermistor part, thereby be to have certain mechanical strength to have again certain current carrying capacity to its requirement, and belong to the internal structure conducting terminal not directly conducting mutually of Different electrodes.
The present invention also provides a kind of preparation method of aforesaid electrode assemblie, it comprises the steps: the structure conducting terminal that outreaches of two electrodes to be connected with internal structure conducting terminal, the described structure conducting terminal that outreaches is arranged relatively, outreaches between structure conducting terminal and at least one pair of adjacent two internal structure conducting terminal lays respectively on different electrodes, is used to form a macromolecular thermosensitive resistor layer described in described internal structure conducting terminal is arranged at; In the time that electrode assemblie includes insulation screening, with insulation screening, the electrodes of two relative arrangements are fixing.
Wherein, described structure conducting terminal and the described internal structure conducting terminal of outreaching is all preferably for adopting the die-cut method preparation of mold cold, i.e. die-cut formation from commercially available sheet metal; Or, the metal forming with rough surface structure is welded on sheet metal standby by cold punching cutting again.
Wherein, the mode of described connection is preferably welding and/or mechanical snap.
Wherein, described welding is preferably laser welding and/or reflow soldering.
Wherein, described insulation screening is preferably for adopting the technique preparation that cold punching is cut and/or electric saw cuts.
Wherein, described fixing preferably for electrode being inserted in insulation screening and/or insulation screening being packed into electrode.
The present invention also provides a kind of high molecular PTC thermistor part that comprises electrode assemblie as above.
The present invention also provides a kind of preparation method of high molecular PTC thermistor part, and it comprises the steps: electrode assemblie as above to be placed in mould, by injection molding technique, high molecular PTC material feedstock particle is injected into mould, pressurize, cooling, the demoulding, crosslinking with radiation.
Wherein, described electrode assemblie preferably passes through the pre-heat treatment being placed in before mould, and the temperature of described the pre-heat treatment is preferably 70 ~ 120 DEG C, and the time of described the pre-heat treatment is preferably 1 ~ 2 hour.
Wherein, described mould can be the conventional mould using in this area, is preferably the mould of conventional runner and/or Hot runner Technology, and better is the mould of Hot runner Technology.Described mould is made up of running gate system, forming part and constitutional detail, is divided into fixed half and moving half two large divisions.
Wherein, described high molecular PTC material can be the conventional high molecular PTC material using in this area, as long as it can adopt injection moulding.
Wherein, described injection molding technique can be the conventional injection molding machine using in this area and completes, and preferably, for adopting vertical injection molding machine and/or horizontal injection press, better is to adopt vertical injection molding machine.
Wherein, the pressure of described pressurize is preferably 60 ~ 80Mpa; The time of described pressurize is preferably 10 ~ 20s.
Wherein, the described cooling time is preferably 20 ~ 30s; When cooling, the temperature of mould is preferably 60 ~ 80 DEG C.
Wherein, preferably heat treatment in vacuum drying oven before operation before described crosslinking with radiation, the temperature of described vacuum drying oven is preferably 80 ~ 85 DEG C, the heat treated time is preferably 12 ~ 14 hours.
Wherein, described crosslinking with radiation preferably for to carry out under electron beam, and the dosage of described radiation is preferably 16 ~ 48Mrad, and that better is 32 ~ 35Mrad.
Wherein, preferably can also heat treatment in vacuum drying oven again after crosslinking with radiation completes, the temperature of described vacuum drying oven is preferably 80 ~ 85 DEG C, the heat treated time is preferably 3 ~ 4 hours.
According to the conventional treatment method of this area, in the preparation method of described high molecular PTC thermistor part, after crosslinking with radiation, also can comprise encapsulation step, described sealing is preferably epoxy resin enclosed for adopting.
Meeting on the basis of this area general knowledge, above-mentioned each optimum condition, can combination in any, obtains the preferred embodiments of the invention.
Agents useful for same of the present invention and raw material be commercially available obtaining all.
Positive progressive effect of the present invention is:
(1) high molecular PTC thermistor part of the present invention has large, the baroque feature of volume, has the effective conducting area in huge inside, thereby has reduced normal temperature resistance, thereby increase substantially normal temperature current lead-through ability;
(2) electrode interior embedding structure completes in immersion fluoropolymer resin system the interior turning part of circuit, thereby has greatly suppressed to cause in thermistor course of action the ability of electrode creeping discharge, makes the voltage withstand capability of product occur large increase;
(3) the inner complicated three-diemsnional electrode structural limitations of thermistor condensate and interelectrode slide displacement in product course of action, helped the recovery of resistance after action, make product repetition stability also have to a certain degree raising;
(4) preparation method's explained hereafter step of high molecular PTC thermistor part of the present invention is few, and overall labour's occupancy of production is low, and production efficiency has very large lifting.
Brief description of the drawings
Fig. 1 is a kind of typical structure schematic diagram of traditional high molecular PTC thermistor part.
Fig. 2 is the structural representation of a kind of electrode provided by the present invention.
Fig. 3 is the structural representation of another kind of electrode provided by the present invention.
Fig. 4 is the structural representation of a kind of electrode assemblie provided by the present invention.
Fig. 5 is the structural representation of another kind of electrode assemblie provided by the present invention.
A kind of structural representation of the high molecular PTC thermistor part that Fig. 6 forms for the present invention.
The another kind of structural representation of the high molecular PTC thermistor part that Fig. 7 forms for the present invention.
Fig. 8 is the resistance-temperature profile of the embodiment of the present invention 1.
Embodiment
Mode below by embodiment further illustrates the present invention, but does not therefore limit the present invention among described scope of embodiments.The experimental technique of unreceipted actual conditions in the following example, according to conventional method and condition, or selects according to catalogue.
In following embodiment, raw material sources used are as follows:
High density polyethylene (HDPE) (HDPE) is Tai Su company product, and the trade mark is 8010.
Carbon black is Cabot Co.,Ltd's product, and the trade mark is BP280.
Nickel powder is Inco company product, and model is Inco255.
Magnesium hydroxide is Zhengzhou Fulong New Material Technology Co., Ltd.'s product, and the trade mark is M-O-W type.
Antioxidant is Basf company product, and model is Irganox1010.
Silicone oil is Dowcorning company product, and model is PMX-200 silicone oil.
Fig. 1 is a kind of typical structure schematic diagram of traditional high molecular PTC thermistor part, comprises two independently electrodes 1 parallel to each other and 1 ' and high molecular PTC material 2 in this structure.
(1) preparation of high molecular PTC material
The quality proportioning of each component is as following table:
| | Embodiment | 1 |
| HDPE | 41% | |
| Carbon black | 34% | |
| Nickel powder | ? | |
| Silicone oil | 5% |
| Magnesium hydroxide | 19 |
| Antioxidant | |
| 1% | |
| Total weight (%) | 100 |
Weigh each raw material by the proportioning of each component in above-mentioned table, raw material is joined under normal temperature to homogenizer stir about 30 minutes under rotating speed 250rpm condition, after discharging, raw material is joined to double screw extruder [CTE-35, section is grand (Nanjing) Machinery Co., Ltd. doubly, draw ratio 40] extruding pelletization, extruder temperature is controlled at 190-210 DEG C, and rotating speed is 120rpm, obtains high molecular PTC material feedstock particle after granulation.
(2) preparation of electrode assemblie
By nickel plating Copper Foil (the T9B type Copper Foil of paper tinsel Co., Ltd of Suzhou FUKUDA METAL, the copper strips (Shanghai great Yu metallic article Co., Ltd, 1020 oxygen-free coppers) that thickness 12 μ m) are welded to thickness 1.2mm with solder(ing) paste by Reflow Soldering is upper, when welding, hair side is upward.Then making two by the rectangle that cutting knife is cut into long 18mm, wide 11mm and long 16mm, wide 11mm, to outreach structure conducting terminal 11 and 11 ' for subsequent use.The internal structure conducting terminal 12 and 12 ' of separately producing the rectangle of some length of a film 8mm, wide 11mm and having long 90 degree of 1mm to bend in its one end, as shown in Figure 2,3.Described internal structure conducting terminal 12 and 12 ' is welded respectively to 4 to outreaching on structure conducting terminal 11 and 11 ' by 4mm interval.Produce and be of a size of 14mm × 13mm with the 3240 expoxy glass lamination fabric swatch (Zhejiang Ya Ge Electronic Science and Technology Co., Ltd.) of thickness 1.5mm, and interval 4mm is by the insulation screening 14 and 14 ' of size 1.3mm × 11mm perforate.With two insulation screenings 14 and 14 ', above-mentioned two electrodes that assemble are fixed, wherein face-the interplanar distance of two electrodes is 12mm, as shown in Figure 4,5.
Fig. 2 is the version according to a kind of electrode provided by the present invention.This electrode forms by outreaching structure conducting terminal 11, internal structure conducting terminal 12 and metal forming 13.In this structure, comprise 3 and be connected to the internal structure conducting terminal parallel to each other outreaching on structure conducting terminal.
Fig. 3 is according to another kind of electrode structure form provided by the present invention, and it is the one distortion of the electrode structure in Fig. 2, forms by outreaching structure conducting terminal 11, internal structure conducting terminal 12 and metal forming 13.In this structure, comprise 2 and be connected to the internal structure conducting terminal parallel to each other outreaching on structure conducting terminal.
Fig. 4 is the version according to a kind of electrode assemblie provided by the present invention.The two arrays of electrodes 1 and 1 ' that electrode assemblie comprises relative arrangement.Electrode 1 forms by outreaching structure conducting terminal 11, internal structure conducting terminal 12 and metal forming 13; Electrode 1 ' forms by outreaching structure conducting terminal 11 ', internal structure conducting terminal 12 ' and metal forming 13 '.The internal structure conducting terminal 12 and 12 ' of two electrodes interts in insulation screening 14 and 14 ' respectively relatively, thereby connects the fixing entirety that has intensity that forms.
Fig. 5 is the version according to another kind of electrode assemblie provided by the present invention.The two arrays of electrodes 1 and 1 ' that electrode assemblie comprises relative arrangement.Electrode 1 forms by outreaching structure conducting terminal 11, internal structure conducting terminal 12 and metal forming 13; Electrode 1 ' forms by outreaching structure conducting terminal 11 ', internal structure conducting terminal 12 ' and metal forming 13 '.Insulation screening 14 and 14 ' is enclosed within the internal structure conducting terminal 12 of electrode and 12 ' end, and this insulation screening is fixed to and outreaches structure conducting terminal 11 and 11 ' upper, thereby forms an entirety that has intensity.
(3) preparation of high molecular PTC thermistor part
In embodiment, adopt day injection molding machine (SA600/100 type, the Ningbo Hai Tian molding machine group) injection mo(u)lding of useful sea.Injection mold adopts the two template die designs of single cave, the rectangular structure that die cavity is 22mm × 17mm × 15mm.First will after electrode assemblie preheating, imbed in advance in injection mold, then after the high molecular PTC material feedstock particle having prepared being fully dried, add injector hopper, raw material enters mould by nozzle after melting in injection molding machine under the pressure of injection screw, the barrel temperature of injection molding machine is respectively 190 DEG C, 200 DEG C, 210 DEG C, 210 DEG C of nozzle temperature, screw speed 60rmp, penetrate and press 35MPa, firing rate 100mm/s, through pressurize 10s(dwell pressure 60MPa), cooling 20s, after discharging, remove cast gate, the deburring demoulding, then 80 DEG C of heat treatments after 12 hours in vacuum drying oven, be placed in crosslinking with radiation under electron beam (Zhang Zhiqing), dosage is 32Mrad.After irradiation completes again through 80 DEG C of heat treatment in vacuum drying oven after 3 hours with epoxy resin enclosed, make high molecular PTC thermistor part, as shown in Figure 6,7.
Fig. 6 is a kind of structural representation of the high molecular PTC thermistor part that forms according to the present invention.This high molecular PTC thermistor part is independently partly made up of three of electrode assemblie, high molecular PTC material 2 and insulation encapsulating materials 3 etc.Wherein, the two arrays of electrodes 1 that electrode assemblie comprises relative arrangement and 1 ' and fix the insulation screening 14 and 14 ' that two electrodes are used.Electrode 1 forms by outreaching structure conducting terminal 11, internal structure conducting terminal 12 and metal forming 13; Electrode 1 ' forms by outreaching structure conducting terminal 11 ', internal structure conducting terminal 12 ' and metal forming 13 '.
Fig. 7 is the another kind of structural representation of the high molecular PTC thermistor part that forms according to the present invention.Shown in this structure and Fig. 6, the difference of structure is: in Fig. 6, two outreach structure conducting terminal 11 and 11 ' and outwards draw in same, and in Fig. 7, two outreach structure conducting terminal 11 and 11 ' and in coplanar, do not draw at relative two.
The high molecular PTC thermistor part being made up of above-mentioned high molecular PTC material and electrode assemblie in the present invention has complicated 3-D solid structure, and above-mentioned electrode assemblie is embedded in macromolecular PTC thermistor material.Whole electrode assemblie is except outreaching structure conducting terminal sub-fraction and external circuit UNICOM, and the equal embedding of remainder is entered in macromolecular PTC thermistor body and is hedged off from the outer world.On two electrodes, internal structure conducting terminal is arranged in order by the mode of relative arrangement, and two adjacent terminals, respectively from two Different electrodes, form a PTC layer in logic.Mode by this cross arrangement is formed multiple layers UNICOM form parallel-connection structure mutually, thereby formed easily effective sandwich construction in a high molecular PTC thermistor part body.Embodiment effect measuring
(1) resistance value is measured
5 of sample thiefs from the prepared high molecular PTC thermistor part of embodiment 1, carry out the resistance value of product and measure, and result is as shown in the table:
(2) PTC effect detection
The PTC effect detection result of embodiment 1 as shown in Figure 8.
(3) keep testing current
Keep electric current to refer to the maximum stable electric current that can not cause by macromolecular PTC thermistor its action (becoming high resistance open state) under normal temperature condition specifying.Method of testing is in the circuit environment of 60V voltage, sets certain initial current and starts test; If electric current does not change in 30 minutes, increase electric current by the step-length amplification of 0.1 ampere, continue test 30 minutes; By that analogy, until circuital current can not keep constant in 30 minutes intervals, the maintenance electric current that the previous current value setting is thermistor.Test result is as shown in the table.
Claims (11)
1. the electrode assemblie for high molecular PTC thermistor part, it comprises two electrodes, it is characterized in that, each electrode includes one and outreaches structure conducting terminal and at least one internal structure conducting terminal outreaching on structure conducting terminal that is connected to, the described structure conducting terminal that outreaches is arranged relatively, outreaches between structure conducting terminal and at least one pair of adjacent two internal structure conducting terminal lays respectively on different electrodes, is used to form a macromolecular thermosensitive resistor layer described in described internal structure conducting terminal is arranged at.
2. electrode assemblie as claimed in claim 1, is characterized in that, it comprises the insulation screening that at least one fixed electrode is used; Described insulation screening is preferably one or more in thermosetting resin, inorganic ceramic and steel plate paper; Wherein, described thermosetting resin is preferably one or more in unsaturated polyester resin, epoxy resin, phenolic resins, melmac and furane resins, preferred epoxy.
3. electrode assemblie as claimed in claim 2, is characterized in that, has two holes in described insulation screening at least, is inserted into insulation screening fixed electrode for internal structure conducting terminal; Or, on described internal structure conducting terminal, have two holes at least, insert internal structure conducting terminal fixed electrode for the screening of insulating.
4. electrode assemblie as claimed in claim 1, it is characterized in that, the described metal forming that outreaches at least one surface soldered in structure conducting terminal and described internal structure conducting terminal and have rough surface, is tightly linked for described high molecular PTC thermistor part electrode assemblie and thermistor material; Described metal forming is preferably one or more in the Copper Foil of Copper Foil, aluminium foil, nickel foil and plating nickel on surface, and better is the Copper Foil of plating nickel on surface.
5. electrode assemblie as claimed in claim 1, it is characterized in that, the described structure conducting terminal that outreaches is metal and/or alloy, be preferably one or more in aluminium, zinc, iron, nickel, silver, red copper, brass, stainless steel and alloy thereof, better is red copper and/or brass, and best is brass; And/or described internal structure conducting terminal is metal and/or alloy, be preferably one or more in aluminium, zinc, iron, nickel, silver, red copper, brass, stainless steel and alloy thereof, better is red copper and/or brass, best is brass; And/or the described thickness that outreaches structure conducting terminal is 0.1-5mm, be preferably 0.2-4mm, be especially preferably 0.25-3mm, that better is 0.3-2mm, that best is 0.5-1mm; And/or the thickness of described internal structure conducting terminal is 0.1-4mm, be preferably 0.15-3mm, be especially preferably 0.2-2mm, that better is 0.25-1.5mm, that best is 0.3-0.5mm.
6. the preparation method of the electrode assemblie for high molecular PTC thermistor part as described in any one in claim 1 ~ 5, it is characterized in that, it comprises the steps: the structure conducting terminal that outreaches of two electrodes to be connected with internal structure conducting terminal, the described structure conducting terminal that outreaches is arranged relatively, outreaches between structure conducting terminal and at least one pair of adjacent two internal structure conducting terminal lays respectively on different electrodes, is used to form a macromolecular thermosensitive resistor layer described in described internal structure conducting terminal is arranged at; In the time that electrode assemblie includes insulation screening, with insulation screening, the electrodes of two relative arrangements are fixing.
7. the preparation method of electrode assemblie as claimed in claim 6, is characterized in that, described outreaches structure conducting terminal and described internal structure conducting terminal all adopts the die-cut method preparation of mold cold; The mode of described connection is welding and/or mechanical snap, described is welded as laser welding and/or reflow soldering; Described insulation screening is to adopt the technique preparation that cold punching is cut and/or electric saw cuts; Described being fixed as is inserted into electrode in insulation screening and/or insulation screening packed into electrode.
8. a high molecular PTC thermistor part, is characterized in that, it comprises the electrode assemblie as described in any one in claim 1 ~ 5.
9. the preparation method of a high molecular PTC thermistor part, it is characterized in that, it comprises the steps: the electrode assemblie as described in any one in claim 1 ~ 5 to be placed in mould, by injection molding technique, high molecular PTC material feedstock particle is injected into mould, pressurize, cooling, the demoulding, crosslinking with radiation.
10. the preparation method of high molecular PTC thermistor part as claimed in claim 9, it is characterized in that, described electrode assemblie is being placed in before mould through the pre-heat treatment, and the temperature of described the pre-heat treatment is 70 ~ 120 DEG C, and the time of described the pre-heat treatment is 1 ~ 2 hour; And/or described mould is the mould of conventional runner and/or Hot runner Technology, it is preferably the mould of Hot runner Technology; And/or described injection molding technique is for adopting vertical injection molding machine and/or horizontal injection press, preferably for adopting vertical injection molding machine; And/or the pressure of described pressurize is 60 ~ 80Mpa, the time of described pressurize is 10 ~ 20s; And/or the described cooling time is 20 ~ 30s, when cooling, the temperature of mould is 60 ~ 80 DEG C.
The preparation method of 11. high molecular PTC thermistor parts as claimed in claim 9, is characterized in that, described crosslinking with radiation is heat treatment in vacuum drying oven before operation, and the temperature of described vacuum drying oven is 80 ~ 85 DEG C, and the heat treated time is 12 ~ 14 hours; Described crosslinking with radiation for to carry out under electron beam, and the dosage of described radiation is 16 ~ 48Mrad, and that better is 32 ~ 35Mrad; Preferably also heat treatment in vacuum drying oven after crosslinking with radiation completes, the temperature of described vacuum drying oven is 80 ~ 85 DEG C, the heat treated time is 3 ~ 4 hours; After described crosslinking with radiation, also comprise encapsulation step, described sealing as adopting is epoxy resin enclosed.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601393A (en) * | 2015-10-20 | 2017-04-26 | 富致科技股份有限公司 | Positive temperature coefficient (PTC) current protection chip device and fabrication method thereof |
| TWI645425B (en) * | 2016-12-29 | 2018-12-21 | 弈禔股份有限公司 | Polymeric positive temperature coefficient element |
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2012
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601393A (en) * | 2015-10-20 | 2017-04-26 | 富致科技股份有限公司 | Positive temperature coefficient (PTC) current protection chip device and fabrication method thereof |
| TWI645425B (en) * | 2016-12-29 | 2018-12-21 | 弈禔股份有限公司 | Polymeric positive temperature coefficient element |
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Application publication date: 20140611 |