CN103839893A - Method for improving flash memory high-temperature oxidation treatment - Google Patents

Method for improving flash memory high-temperature oxidation treatment Download PDF

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Publication number
CN103839893A
CN103839893A CN201410097591.9A CN201410097591A CN103839893A CN 103839893 A CN103839893 A CN 103839893A CN 201410097591 A CN201410097591 A CN 201410097591A CN 103839893 A CN103839893 A CN 103839893A
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China
Prior art keywords
temperature oxidation
high temperature
flash memory
oxidation process
heater
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CN201410097591.9A
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Chinese (zh)
Inventor
李占斌
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Priority to CN201410097591.9A priority Critical patent/CN103839893A/en
Publication of CN103839893A publication Critical patent/CN103839893A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

The invention provides a method for improving flash memory high-temperature oxidation treatment. The method comprises the steps that a wafer is conveyed to a reaction cavity in a furnace body from equipment for containing and conveying a wafer box; the furnace body is connected to a gas integrating system, and the furnace body is connected to a vacuum pumping pump connected with the gas integrating system through a guide pipe; high-temperature oxidation treatment is carried out on the wafer in the reaction cavity in the furnace body, the gas integrating system is used for controlling process gas in the reaction cavity, and the vacuum pumping pump is started in the gas integrating system so that the furnace body can be vacuumized in the high-temperature oxidation treatment process. According to the method for improving flash memory high-temperature oxidation treatment, the vacuum exhaust function is additionally achieved, residuals of chloridion in environment can be reduced, and the yield of flash memory products is effectively improved.

Description

Improve the method for flash memory high temperature oxidation process
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method of improving flash memory high temperature oxidation process.
Background technology
The advantages such as flash memory is convenient with it, and storage density is high, good reliability become the focus of studying in non-volatility memorizer.Since first flash memory products appearance 1980s, along with development and the demand of each electronic product to storage of technology, flash memory is widely used in mobile phone, and notebook, in the movement such as palmtop PC and USB flash disk and communication apparatus.
Flash memory is a kind of non-volatility memory, its operation principles be the critical voltage by changing transistor or memory cell control gate pole passage switch to reach the object of storage data, making to be stored in data in memory can be because power interruptions disappears, and flash memory is a kind of special construction of electric erasable and programmable read-only memory.Nowadays flash memory has occupied most of market share of non-volatile semiconductor memory, becomes non-volatile semiconductor memory with fastest developing speed.
But in the prior art, the yield of flash memory products is difficult to improve, the yield that improves thus flash memory products is the method for Worth Expecting.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, and a kind of method of yield that can flash memory products is provided.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of method of improving flash memory high temperature oxidation process, it comprises:
First step: by wafer from being passed to the reaction cavity in body of heater for the equipment of placing and transmit wafer cassette;
Second step: body of heater is connected to gas integrated system, and utilizes conduit body of heater to be connected to the vacuum pumping pump being connected with gas integrated system;
Third step: the reaction cavity in body of heater is carried out high temperature oxidation process to wafer, wherein gas integrated system is used for controlling the process gas in reaction cavity, and wherein opens vacuum pumping pump to body of heater is vacuumized in the process of high temperature oxidation process.
Preferably, the described method of improving flash memory high temperature oxidation process for the environment 800 degrees Celsius of high temperature the silicon dioxide SiO with low pressure <500mToll growth 500A～600A thickness 2the technique of film.
Preferably, the described method of improving flash memory high temperature oxidation process is for growing as the flash memory system fabrication technique of the oxide of spacer.
Preferably, in high temperature oxidation process, there is following chemical reaction:
SiH 2Cl 2+2N 2O→SiO 2+2N 2+2HCl。
Preferably, in high temperature oxidation process, there is following chemical reaction:
4SiH 2cl 2+ 4H 2o → (SiH 2o) 4(solid)+8HCl.
Preferably, in high temperature oxidation process, there is following chemical reaction:
SiH 2cl 2+ O 2→ SiO 2(solid)+2HCl.
In the high temperature oxidation process of flash memory manufacture, produce the chloride ion (Cl that can affect the yield of flash memory products -) byproduct, correspondingly, in the method for improving flash memory high temperature oxidation process according to the present invention, reduce the residual of chloride ion in environment by additional vacuum pumping function, effectively improve the yield of flash memory products.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows the flow chart of the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process.
Fig. 2 schematically shows the schematic diagram of the concrete example of the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
In the manufacturing process of flash memory, existence need to be carried out for example, processing step with the grow oxide oxide of spacer (, as) of high temperature oxidation process.For example, in some concrete flash technology, can be in the environment of 800 degrees Celsius of high temperature, with low pressure <500mToll, the silicon dioxide SiO of growth 500A～600A thickness 2film.
The present inventor advantageously finds, the chloride ion (Cl that can occur undesirably in high temperature oxidation process -) byproduct, if do not remove chloride ion, finally can affect the yield of flash memory products.Correspondingly, the present inventor's proposition is residual by chloride ion in additional vacuum pumping function minimizing environment, to improve the yield of flash memory products.
Specifically, Fig. 1 schematically shows the flow chart of the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process.And Fig. 2 schematically shows the schematic diagram of the concrete example of the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process.
For example, the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process is used in the silicon dioxide SiO with low pressure <500mToll growth 500A～600A thickness in the environment of 800 degrees Celsius of high temperature 2the technique of film.
More particularly, as shown in Figure 1, the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process comprises:
First step S1: by wafer from the equipment 100(for placing and transmit wafer cassette as shown in Figure 2) be passed to the reaction cavity 201 in body of heater 200;
Second step S2: body of heater 200 is connected to gas integrated system 300, and utilizes conduit 400 body of heater 200 to be connected to the vacuum pumping pump 500 being connected with gas integrated system 300;
Third step S3: the reaction cavity 201 in body of heater 200 is carried out high temperature oxidation process to wafer, wherein gas integrated system 300 is for controlling the process gas in reaction cavity 201, and wherein opens vacuum pumping pump 500 to body of heater 200 is vacuumized in the process of high temperature oxidation process.
For example, in concrete example, in high temperature oxidation process, there are one or more in following chemical reaction:
SiH 2Cl 2+2N 2O→SiO 2+2N 2+2HCl；
4SiH 2cl 2+ 4H 2o → (SiH 2o) 4(solid)+8HCl;
SiH 2cl 2+ O 2→ SiO 2(solid)+2HCl.
Below provide according to " experiment one " of the technique of prior art and according to " experiment two " of the embodiment of the present invention, can find out, by adopting the method for improving according to the preferred embodiment of the invention flash memory high temperature oxidation process, chloride ion mean concentration drops to 195.74 from 202.35.
Figure BDA0000477983110000041
Thus, in the high temperature oxidation process of flash memory manufacture, produced the chloride ion (Cl that can affect the yield of flash memory products -) byproduct, correspondingly, improving according to the preferred embodiment of the invention in the method for flash memory high temperature oxidation process, reduce the residual of chloride ion in environment by additional vacuum pumping function, effectively improve the yield of flash memory products.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as term " first " in specification, " second ", " the 3rd " are only for distinguishing each assembly, element, step of specification etc., rather than for representing logical relation or the ordinal relation etc. between each assembly, element, step.
Be understandable that, although the present invention discloses as above with preferred embodiment, but above-mentioned example is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible variations and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.

Claims (6)

1. improve a method for flash memory high temperature oxidation process, it is characterized in that comprising:
First step: by wafer from being passed to the reaction cavity in body of heater for the equipment of placing and transmit wafer cassette;
Second step: body of heater is connected to gas integrated system, and utilizes metal tube body of heater to be connected to the vacuum pumping pump being connected with gas integrated system;
Third step: the reaction cavity in body of heater is carried out high temperature oxidation process to wafer, wherein gas integrated system is used for controlling the process gas in reaction cavity, and wherein opens vacuum pumping pump to body of heater is vacuumized in the process of high temperature oxidation process.
2. the method for improving flash memory high temperature oxidation process according to claim 1, is characterized in that, the described method of improving flash memory high temperature oxidation process for the environment 800 degrees Celsius of high temperature with low pressure <500
The silicon dioxide SiO of mToll growth 500A～600A thickness 2the technique of film.
3. the method for improving flash memory high temperature oxidation process according to claim 1 and 2, is characterized in that, the described method of improving flash memory high temperature oxidation process is for growing as the flash memory system fabrication technique of the oxide of spacer.
4. the method for improving flash memory high temperature oxidation process according to claim 1 and 2, is characterized in that, following chemical reaction has occurred in high temperature oxidation process:
SiH 2Cl 2+2N 2O→SiO 2+2N 2+2HCl。
5. the method for improving flash memory high temperature oxidation process according to claim 1 and 2, is characterized in that, following chemical reaction has occurred in high temperature oxidation process:
4SiH 2cl 2+ 4H 2o → (SiH 2o) 4(solid)+8HCl.
6. the method for improving flash memory high temperature oxidation process according to claim 1 and 2, is characterized in that, following chemical reaction has occurred in high temperature oxidation process:
SiH 2cl 2+ O 2→ SiO 2(solid)+2HCl.
CN201410097591.9A 2014-03-17 2014-03-17 Method for improving flash memory high-temperature oxidation treatment Pending CN103839893A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050090061A1 (en) * 2003-10-28 2005-04-28 Rudeck Paul J. Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device
CN102394222A (en) * 2011-11-24 2012-03-28 上海宏力半导体制造有限公司 Method for preventing solid particle formation on wafer surface
CN103325676A (en) * 2012-03-21 2013-09-25 株式会社日立国际电气 Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050090061A1 (en) * 2003-10-28 2005-04-28 Rudeck Paul J. Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device
CN102394222A (en) * 2011-11-24 2012-03-28 上海宏力半导体制造有限公司 Method for preventing solid particle formation on wafer surface
CN103325676A (en) * 2012-03-21 2013-09-25 株式会社日立国际电气 Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

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