CN103834963A - A preparation method of silver phosphate and M-O (M=Cu+, fe3+, zn2+) narrow bandgap semiconductor nanoparticles - Google Patents

A preparation method of silver phosphate and M-O (M=Cu+, fe3+, zn2+) narrow bandgap semiconductor nanoparticles Download PDF

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CN103834963A
CN103834963A CN201410011962.7A CN201410011962A CN103834963A CN 103834963 A CN103834963 A CN 103834963A CN 201410011962 A CN201410011962 A CN 201410011962A CN 103834963 A CN103834963 A CN 103834963A
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preparation
low
trisilver phosphate
gap semiconductor
bandgap semiconductor
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赵海东
马宏芳
刘�文
刘锐
郭永
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Shanxi Datong University
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Abstract

The invention relates to a preparation method of silver phosphate and M-O (M=Cu+, Fe3+, Zn2+) narrow bandgap semiconductor nanoparticles, which adopts a simple double-electrode electrolytic method, respectively adopts silver, copper, iron or zinc sheets as cathodes and anodes, prepares Ag3PO4, Cu2O, Fe2O3 and ZnO narrow bandgap semiconductor nano-materials by regulating reaction parameters such as electrolytic voltage, electrolyte composition, and the like, and performs multitime washing of the products and centrifugal separation to obtain the nanoparticles. The whole preparation process is convenient to operate, simple in process, and applicable to controllable synthesis of narrow bandgap semiconductor nanoparticles. The prepared narrow bandgap semiconductor nano-materials can be used as photocatalysts to degrade organic pollutants under the irradiation of visible light, which greatly improves the degradation efficiency of organic pollutants, saves the treatment cost of organic pollutants, and has great application prospects in the field of photocatalysis application.

Description

A kind of Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle
Technical field
The present invention relates to a kind of Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle, particularly a kind of Ag of flower-shaped and polyhedral structure 3pO 4nanoparticle and sheet Cu 2o, Fe 2o 3preparation method with ZnO nano-structure.
Technical background
Along with the aggravation of environmental pollution, the mankind's survival and development have been arrived in serious threat of the organic pollutant in natural water, manufacture new and effective material administer organic pollutant be human society face and be badly in need of solve key subjects.Since professor Fujishima of Japan in 1972 finds that titanium dioxide can water of decomposition under UV-irradiation as electrode, Photocatalitic Technique of Semiconductor is extensively studied and utilizes in Organic Waste Water Treatment field.But, in multiphase photocatalysis reaction at present, adopt maximum semiconductor catalyst Ti0 2energy gap be 3.20eV, can only absorb the UV-light (λ < 387nm) that accounts for sunlight 4%, limit greatly the making full use of of sunlight, so development of new, the wide photocatalyst material of efficient, visible light-responded scope are the study hotspots that organic pollutant field is administered in current photochemical catalysis.
Studies confirm that response and the energy gap of semi-conductor to visible ray is closely related, narrow energy gap is conducive to the absorption to visible ray, so starting studied person, some low-gap semiconductor nano materials pay close attention to, as: Red copper oxide, ferric oxide, Trisilver phosphate etc.With Ag 3pO 4for example, due to its energy gap narrower (2.34eV), can absorbing wavelength be less than the visible ray of 530nm, get a good chance of becoming the conductor photocatalysis material wide to visible light-responded scope.Leaf golden flower seminar reported first Ag 3p0 4can water of decomposition system 0 under radiation of visible light 2, energy efficient degradation of organic dye solution, has opened Ag 3p0 4in the new application of photocatalysis field.Ag 3p0 4pattern very large on the impact of its photocatalysis performance, but due to Ag 3p0 4less (Ksp=1.4 × 10 of solubility product numerical value -16), cause adopting traditional step precipitator method can only prepare the inhomogenous near-spherical nanoparticle of pattern.Obtain the Ag of pattern homogeneous 3p0 4nanoparticle, must be first by Ag +with NH 3 -carry out complexing, form Ag (NH 3) 2 +precursor, then with HPO 4 2-obtain product by ion exchange reaction, as the Ag of the patterns such as cubes, rhombic dodecahedron, tetrahedron 3p0 4obtain by two-step approach.Visible, the Ag of regular morphology 3p0 4the preparation of nanoparticle need to control effectively to the speed that participates in precipitin reaction ion, so how to control Ag in reaction +release rate, make Ag 3p0 4crystal, according to certain crystal plane direction growth, is finally realized the controlled preparation of pattern homogeneous product, and then explores the impact of product pattern on photocatalysis performance, will be the new trend of conductor photocatalysis research field.
About Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) etc. the preparation method of low-gap semiconductor nanoparticle adopts at present is mainly the precipitator method, because precipitin reaction speed is very fast, cause the speed being difficult to participating in precipitin reaction ion to control effectively, generally need to introduce complexing agent and slow down precipitin reaction speed, thereby obtain the nanoparticle of different-shape size, product pattern kind is less, and preparation process repeatability is poor, be unfavorable for scale operation, greatly limited its application in photocatalysis degradation organic contaminant field.
Summary of the invention
The object of the invention is to overcome the shortcoming of above-mentioned prior art, a kind of low cost, environmental friendliness are provided, can realize and prepare in batches a kind of Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle.
For achieving the above object, the technical solution used in the present invention is:
S1, taking silver, copper, iron or zinc metal sheet as negative electrode with anode, Na 2hPO 4-NaH 2pO 4buffered soln or diluted sodium hydroxide solution are electrolytic solution, and 0.01M Repone K is supporting electrolyte, and interelectrode distance is 1cm, and electrolysis voltage is 2～12v, are carried out the total metal content of control and participate in reaction by suitable electrolysis time.PO in the metallic cation that electrolysis produces and electrolytic solution 4 3-or OH -anion binding, generates Trisilver phosphate and M-O (M=Cu 2+, Fe 3+, Zn 2+) metal-oxide semiconductor (MOS) nanoparticle;
The copper conductor oxidate wherein directly being generated by electrolysis is CuO, further need under suitable condition, use Reduction of Glucose, thereby obtain final product Cu 2o; All the other metal semiconductor oxide compound (Fe 2o 3and ZnO) can be directly by electrolytic preparation.
S2, reaction are repeatedly washed resultant water after finishing, centrifugation, and the product obtaining is Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) serial low-gap semiconductor nanoparticle.
The tinsel that the present invention's silver, copper, iron or zinc metal sheet used is content>=99%, the geometrical dimension of electrode slice is: 1cm × 1cm × 1mm; Na 2hPO 4-NaH 2pO 4the preparation of buffered soln is by 4.304g Na 2hPO 4with 1.040g NaH 2pO 4dissolution of solid is in 1000mL distilled water, and pH value is 7.3; Diluted sodium hydroxide solution concentration is 0.001M～0.005M.
Compared with prior art, the whole preparation process of the present invention is easy to operate, and technique is simple, and environmental protection is not used any organic surface active agent, with low cost, can be used for the controlledly synthesis of low-gap semiconductor nanoparticle.Composition, the pattern of the semi-conductor nano particles obtaining can regulate by type of electrodes and electrolysis voltage.The Trisilver phosphate nanoparticle obtaining is flower-shaped and polyhedral structure; Cu 2o, Fe 2o 3with ZnO be sheet structure, the low-gap semiconductor nano material preparing is used as to photocatalyst, under the irradiation of visible ray, it is degrading organic pollutant, can improve greatly the degradation efficiency of organic pollutant, save organic pollutant processing cost, thereby have great application prospect in photocatalytic applications field.
Brief description of the drawings
Fig. 1 is Trisilver phosphate nanoparticle scanning electron microscope image prepared by embodiment 1-3, and figure a, b, c, d correspond respectively to voltage 5V, 8V, 10V, 12V;
Fig. 2 is sheet structure cuprous nano particle agglomeration scanning electron microscope image prepared by embodiment 4;
Fig. 3 is ferric oxide nanometer sheet scanning electron microscope image prepared by embodiment 5.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Embodiment 1:
Taking silver strip as negative electrode with anode, Na 2hPO 4-NaH 2pO 4buffered soln is electrolytic solution, and 0.01M Repone K is supporting electrolyte, and interelectrode distance is 1cm, adjusting electrolysis voltage is 5v, starts electrolysis, can see that anode surface has yellow Trisilver phosphate flocks to generate, negative electrode produces hydrogen, electrolysis certain hour, and the total metal content of control and participate in reaction is 5mM.Reaction finishes rear continuation and leaves standstill precipitation 12h, slowly pump supernatant liquid, by lower floor's Trisilver phosphate product be transferred in centrifuge tube, carry out centrifugal, water repeatedly washs, rotating speed is 2000r/min, finally sample is put into vacuum drying oven (80 DEG C) dry, the product obtaining is flower-like structure Trisilver phosphate low-gap semiconductor nanoparticle.Can find out that by Fig. 1 a (5v product) prepared Trisilver phosphate nanoparticle is flower-like structure.
Embodiment 2:
Taking silver strip as negative electrode with anode, Na 2hPO 4-NaH 2pO 4buffered soln is electrolytic solution, and 0.01M Repone K is supporting electrolyte, and interelectrode distance is 1cm, and regulating electrolysis voltage is 8V or 10v, electrolysis certain hour, and the total metal content of control and participate in reaction is 5mM.Reaction finishes rear continuation and leaves standstill precipitation 12h, slowly pump supernatant liquid, by lower floor's Trisilver phosphate product be transferred in centrifuge tube, carry out centrifugal, water repeatedly washs, rotating speed is 2000r/min, finally sample is put into vacuum drying oven (80 DEG C) dry, the product obtaining is polyhedral structure Trisilver phosphate low-gap semiconductor nanoparticle.The size that can find out prepared Trisilver phosphate nanoparticle by Fig. 1 b (8v product), c (10V product), between 600-800nm, and is polyhedral structure, and the quantity of face is along with the increase of electrolysis voltage is increasing.
Embodiment 3:
Taking silver strip as negative electrode with anode, Na 2hPO 4-NaH 2pO 4buffered soln is electrolytic solution, and 0.01M Repone K is supporting electrolyte, and interelectrode distance is 1cm, and adjusting electrolysis voltage is 12V, electrolysis certain hour, and the total metal content of control and participate in reaction is 5mM.Reaction finishes rear continuation and leaves standstill precipitation 12h, slowly pump supernatant liquid, by lower floor's Trisilver phosphate product be transferred in centrifuge tube, carry out centrifugal, water repeatedly washs, rotating speed is 2000r/min, finally sample is put into vacuum drying oven (80 DEG C) dry, the product obtaining is near-spherical structure Trisilver phosphate low-gap semiconductor nanoparticle.The size that can find out prepared Trisilver phosphate nanoparticle by Fig. 1 d (12v product) is between 600-800nm, and be near-spherical structure, can be understood as the increase along with electrolysis voltage, the quantity of face increases to the near-spherical particle forming when higher value.From Fig. 1 a-d, the change of electrolysis voltage has very large impact to the pattern of Trisilver phosphate nanoparticle.
Embodiment 4:
Taking copper sheet as negative electrode with anode, 0.005M sodium hydroxide solution is electrolytic solution, 0.01M Repone K is supporting electrolyte, interelectrode distance is 1cm, adjusting electrolysis voltage is 5V, electrolysis certain hour, the total metal content of control and participate in reaction is 5mM, continue to leave standstill precipitation 12h, slowly pump supernatant liquid, lower floor's cupric oxide resultant is transferred to and in centrifuge tube, carries out centrifugation, after water repeatedly washs, be scattered in beaker with 40mL deionized water, slowly drip 2mL glucose solution (0.1mol/L), guarantee glucose is excessive, then slowly drip 1mL sodium hydroxide solution (0.1mol/L), deionized water is diluted to 50mL and is placed on 2h in 70 DEG C of water-baths, by the product obtaining, water and dehydrated alcohol are respectively washed three times respectively, centrifugation, rotating speed 10000r/min.Prepared cuprous nano particle is sheet structure aggregate as seen from Figure 2.
Embodiment 5:
Taking iron plate as negative electrode with anode, 0.001M sodium hydroxide solution is electrolytic solution, and 0.01M Repone K is supporting electrolyte, and interelectrode distance is 1cm, adjusting electrolysis voltage is 1V, electrolysis certain hour, the total metal content of control and participate in reaction is 5mM, continues to leave standstill precipitation 12h, slowly pump supernatant liquid, by the product obtaining respectively water and dehydrated alcohol respectively wash three times, centrifugation, rotating speed 10000r/min.Prepared ferric oxide nanoparticles is sheet structure as seen from Figure 3.
Those skilled in the art will readily understand; the foregoing is only preferred embodiments of the present invention; not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.

Claims (5)

1. a Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle, it is characterized in that, comprise the following steps:
S1, taking silver, copper, iron or zinc metal sheet as negative electrode with anode, Na 2hPO 4-NaH 2pO 4buffered soln or diluted sodium hydroxide solution are electrolytic solution, and 0.01M Repone K is supporting electrolyte, and interelectrode distance is 1cm, electrolysis voltage is 2～12v, carry out electrolytic reaction, carried out the total metal content of control and participate in reaction by electrolysis time, PO in the metallic cation that electrolysis produces and electrolytic solution 4 3-or OH -anion binding, generates Trisilver phosphate and M-O (M=Cu 2+, Fe 3+, Zn 2+) metal-oxide semiconductor (MOS) nanoparticle;
The copper conductor oxidate directly being generated by electrolysis is CuO, further need under suitable condition, use Reduction of Glucose, thereby obtain final product Cu 2o; All the other metal semiconductor oxide compound (Fe 2o 3and ZnO) can be directly by electrolytic preparation.
S2, reaction are repeatedly washed resultant water after finishing, centrifugation, and the product obtaining is Trisilver phosphate and M-O (M=Cu +, Fe 3+, Zn 2+) serial low-gap semiconductor nanoparticle.
2. Trisilver phosphate according to claim 1 and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle, it is characterized in that: Na 2hPO 4-NaH 2pO 4the preparation of buffered soln is by 4.304g Na 2hPO 4with 1.040g NaH 2pO 4dissolution of solid is in 1000mL distilled water, and pH value is 7.3.
3. Trisilver phosphate according to claim 1 and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle, it is characterized in that: the geometrical dimension of described electrode slice is: 1cm × 1cm × 1mm.
4. Trisilver phosphate according to claim 1 and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle, it is characterized in that: the tinsel that silver, copper, iron or zinc metal sheet are content>=99%.
5. Trisilver phosphate according to claim 1 and M-O (M=Cu +, Fe 3+, Zn 2+) preparation method of low-gap semiconductor nanoparticle, it is characterized in that: in step S1, diluted sodium hydroxide solution concentration is 0.001M～0.005M.
CN201410011962.7A 2014-01-09 2014-01-09 A preparation method of silver phosphate and M-O (M=Cu+, fe3+, zn2+) narrow bandgap semiconductor nanoparticles Pending CN103834963A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105195185A (en) * 2015-09-18 2015-12-30 武汉理工大学 Efficient light fenton catalyst Ag3PO4/CuO and preparation method thereof
CN106378167A (en) * 2016-10-19 2017-02-08 常州大学 Method for preparing ferric oxide zinc oxide composite yttrium phosphate catalyst
CN106423230A (en) * 2016-10-19 2017-02-22 常州大学 Preparation method of nickel oxide compound yttrium phosphate catalyst
CN106492858A (en) * 2016-10-19 2017-03-15 常州大学 A kind of preparation method of nickel oxide copper oxide compound phosphoric acid yttrium catalyst
CN106540725A (en) * 2016-10-19 2017-03-29 常州大学 A kind of preparation method of tungsten oxide compound phosphoric acid yttrium catalyst
CN108927190A (en) * 2018-08-03 2018-12-04 兰州大学 Optic catalytic composite material and its preparation method and application

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101486485A (en) * 2009-02-27 2009-07-22 华东师范大学 Honeycomb CuO nano material and preparation thereof
CN102712493A (en) * 2009-08-27 2012-10-03 康宁股份有限公司 Zinc oxide and cobalt oxide nanostructures and methods of making thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101486485A (en) * 2009-02-27 2009-07-22 华东师范大学 Honeycomb CuO nano material and preparation thereof
CN102712493A (en) * 2009-08-27 2012-10-03 康宁股份有限公司 Zinc oxide and cobalt oxide nanostructures and methods of making thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘勇平: "磷酸银及其异质结高效可见光催化剂的制备及性能研究", 《中国博士学位论文全文数据库 工程科技Ⅰ辑》, no. 1, 15 January 2013 (2013-01-15) *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105195185A (en) * 2015-09-18 2015-12-30 武汉理工大学 Efficient light fenton catalyst Ag3PO4/CuO and preparation method thereof
CN106378167A (en) * 2016-10-19 2017-02-08 常州大学 Method for preparing ferric oxide zinc oxide composite yttrium phosphate catalyst
CN106423230A (en) * 2016-10-19 2017-02-22 常州大学 Preparation method of nickel oxide compound yttrium phosphate catalyst
CN106492858A (en) * 2016-10-19 2017-03-15 常州大学 A kind of preparation method of nickel oxide copper oxide compound phosphoric acid yttrium catalyst
CN106540725A (en) * 2016-10-19 2017-03-29 常州大学 A kind of preparation method of tungsten oxide compound phosphoric acid yttrium catalyst
CN106423230B (en) * 2016-10-19 2018-10-16 常州大学 A kind of preparation method of nickel oxide compound phosphoric acid yttrium catalyst
CN106378167B (en) * 2016-10-19 2019-03-22 常州大学 A kind of preparation method of iron oxide copper oxide compound phosphoric acid yttrium catalyst
CN108927190A (en) * 2018-08-03 2018-12-04 兰州大学 Optic catalytic composite material and its preparation method and application

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Application publication date: 20140604