CN103825562A - Power amplifier and power amplifying system with field-effect transistors - Google Patents
Power amplifier and power amplifying system with field-effect transistors Download PDFInfo
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- CN103825562A CN103825562A CN201210469805.1A CN201210469805A CN103825562A CN 103825562 A CN103825562 A CN 103825562A CN 201210469805 A CN201210469805 A CN 201210469805A CN 103825562 A CN103825562 A CN 103825562A
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Abstract
The invention discloses a power amplifier and a power amplifying system with field-effect transistors. The power amplifier with the field-effect transistors comprises a control circuit, four integrated driving circuits and an output power transformer. The control circuit is used for converting single-frequency analog signals into digital signals and outputting the digital signals; a first port of each integrated driving circuit is connected with the control circuit, a second port of each integrated driving circuit is connected with a field-effect power switch tube, and each integrated driving circuit is used for receiving the corresponding digital signals and converting the digital signals into driving signals for controlling the turn-on time or turn-off time of the corresponding field-effect power switch tube; the output power transformer is connected with the various field-effect power switch tubes and is used for outputting amplified power under the condition that lead bridge arms or lag bridge arms are turned on under the control of the driving signals; each lead bridge arm or each lag bridge arm comprises two corresponding field-effect power switch tubes. The power amplifier and the power amplifying system have the advantages that the power amplifier can output the high power and is simple in design and small in size.
Description
Technical field
The present invention relates to circuit field, in particular to a kind of field effect transistor power amplifier and system.
Background technology
At present, myriametric wave, long wave, medium-wave power amplifier adopt electron tube and field effect transistor to realize in fields such as communication, broadcast, navigation, time services conventionally.Booster output that electron tube is realized large but exist efficiency low, need filament pre-heating, can not plug and play defect, and the useful life of electron tube is shorter; And the cell power of the amplifier that field effect transistor realizes is little, only have at present 5kW, but efficiency is high, and the device of field effect transistor is very long useful life.
Along with improving constantly that military communication and civil area require the power amplification of power amplifier, the field effect transistor amplifier of existing techniques in realizing cannot meet more powerful demand.
As from the foregoing, field effect transistor power amplifier circuit complexity, the volume realized for above-mentioned prior art are at present large, and cannot export powerful problem, not yet propose at present effective solution.
Summary of the invention
Field effect transistor power amplifier circuit complexity, the volume realized for correlation technique are large, and cannot export powerful problem, not yet propose at present effective solution, for this reason, main purpose of the present invention is to provide a kind of field effect transistor power amplifier and system, to address the above problem.
To achieve these goals, according to an aspect of the present invention, provide a kind of field effect transistor power amplifier, this field effect transistor power amplifier comprises: control circuit, and for single-frequency analog signal is converted to digital signal, and output digit signals; Four integrated drive electronicss, the first port of each integrated drive electronics is connected with control circuit respectively, the second port is connected with a fet power switch pipe respectively, for receiving digital signals, and digital signal is converted into the driving signal for controlling each fet power switch pipe ON time or turn-off time; Output power transformer, is connected with each fet power switch pipe, for by driving signal controlling leading-bridge or lagging leg conducting in the situation that, and the power after output is amplified; Wherein, leading-bridge or lagging leg respectively comprise two fet power switch pipes.
Further, the G port of the first integrated drive electronics is connected in the grid of the first fet power switch pipe, and the drain electrode of the first fet power switch pipe is connected in supply voltage via the first inductance and the first fuse; The G port of the second integrated drive electronics is connected in the grid of the second fet power switch pipe, and the drain electrode of the second fet power switch pipe is connected with the source electrode of the first integrated drive electronics, the source ground of the second fet power switch pipe; The G port of the 4th integrated drive electronics is connected in the grid of the 4th fet power switch pipe, and the source electrode of the 4th fet power switch pipe is connected in supply voltage via the second inductance and the second fuse; The G port of the 3rd integrated drive electronics is connected in the grid of the 3rd fet power switch pipe, and the source electrode of the 3rd fet power switch pipe is connected with the drain electrode of the 4th integrated drive electronics, the grounded drain of the 3rd fet power switch pipe; The first end of the primary coil of synthetic transformer is connected in the first node on the drain electrode of the second fet power switch pipe and the source electrode connecting path of the first integrated drive electronics via the first electric capacity, and the second end of the primary coil of synthetic transformer is connected in the Section Point on the source electrode of the 4th fet power switch pipe and the drain electrode connecting path of the 3rd integrated drive electronics; Wherein, when driving the conducting simultaneously of signal controlling the first fet power switch pipe and the 3rd fet power switch pipe, and when the second fet power switch pipe and the 4th fet power switch pipe turn-off simultaneously, supply voltage is applied on the primary coil of synthetic transformer, and by exporting amplifying power after magnetic Field Coupling; Or, when driving the conducting simultaneously of signal controlling the second fet power switch pipe and the 4th fet power switch pipe, and when the first fet power switch pipe and the 3rd fet power switch pipe turn-off simultaneously, supply voltage is applied on the primary coil of synthetic transformer, and by exporting amplifying power after magnetic Field Coupling.
Further, field effect transistor power amplifier also comprises: the first diode, the positive pole of the first diode is connected in the source electrode of the second fet power switch pipe, the negative pole of the first diode is connected in first node, so that after proper driving signal controlling the first fet power switch pipe shutoff, and control the second fet power switch pipe not before conducting, control the electric current afterflow on the primary coil of synthetic transformer.
Further, field effect transistor power amplifier also comprises: the second diode, the positive pole of the second diode is connected in the drain electrode of the 4th fet power switch pipe, the negative pole of the second diode is connected in Section Point, so that after proper driving signal controlling the second fet power switch pipe conducting, and before the 4th fet power switch pipe does not turn-off, the electric current of controlling on the primary coil that synthesizes transformer returns via the second diode.
Further, field effect transistor power amplifier also comprises: the 3rd diode, the positive pole of the 3rd diode is connected in first node, the negative pole of the 3rd diode is connected in supply voltage, so that after proper driving signal controlling the second fet power switch pipe shutoff, and the first fet power switch pipe is before conducting, control the electric current afterflow on the primary coil of synthetic transformer.
Further, field effect transistor power amplifier also comprises: the 4th diode, the positive pole of the 4th diode is connected in Section Point, the negative pole of the 4th diode is connected in supply voltage, so that after proper driving signal controlling the first fet power switch pipe conducting, and the 3rd fet power switch pipe is before conducting, the electric current of controlling on the primary coil of synthetic transformer returns via the 4th diode.
Further, field effect transistor power amplifier also comprises: the second electric capacity and the 3rd electric capacity, and the first end after two Capacitance parallel connections connect is connected in supply voltage, and the second end ground connection, for DC filtering and energy storage.
Further, field effect transistor power amplifier also comprises: the first resistance and the 4th electric capacity, and after the first resistance and the 4th capacitances in series, one end is connected with the first inductance, and other end ground connection is vibrated for absorbing high-frequency; The second resistance and the 5th electric capacity, after the second resistance and the 5th capacitances in series, one end is connected with the second inductance, and other end ground connection is vibrated for absorbing high-frequency.
Further, each integrated drive electronics comprises: testing circuit, for detecting in real time the magnitude of voltage between integrated drive electronics DK port and SK port, determine integrated drive electronics generation over-current phenomenon avoidance according to magnitude of voltage in the situation that, block integrated drive electronics output drive signal; Processor, blocks for recording integrated drive electronics the blockade number of times that drives signal, and in the situation that blockade number of times exceedes predetermined value, sends complete locking signal to make integrated drive electronics stop automatic unlocking function.
To achieve these goals, according to a further aspect in the invention, a kind of field effect transistor power amplifying system is provided, this system comprises: comprise above-mentioned any one field effect transistor power amplifier, field effect transistor power amplifying system also comprises: exciter, be connected with control circuit, for single-frequency analog signal is provided.
By the present invention, adopt control circuit, for single-frequency analog signal is converted to digital signal, and output digit signals; Four integrated drive electronicss, the first port of each integrated drive electronics is connected with control circuit respectively, the second port is connected with a fet power switch pipe respectively, for receiving digital signals, and digital signal is converted into the driving signal for controlling each fet power switch pipe ON time or turn-off time; Output power transformer, is connected with each fet power switch pipe, for by driving signal controlling leading-bridge or lagging leg conducting in the situation that, and the power after output is amplified; Wherein, leading-bridge or lagging leg respectively comprise two fet power switch pipes, field effect transistor power amplifier circuit complexity, volume that related art realizes are solved large, and cannot export powerful problem, and then realize the powerful power amplifier of output, and make this power amplifier reach simplicity of design, effect that volume is little.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms the application's a part, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is according to the structural representation of the field effect transistor power amplifier of the embodiment of the present invention;
Fig. 2 is according to the circuit diagram of field effect transistor power amplifier embodiment illustrated in fig. 1;
Fig. 3 is according to the pulse sequence schematic diagram of Fig. 1 and driving signal embodiment illustrated in fig. 2.
Embodiment
It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the application can combine mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the present invention in detail.
Fig. 1 is according to the structural representation of the field effect transistor power amplifier of the embodiment of the present invention; Fig. 2 is according to the circuit diagram of field effect transistor power amplifier embodiment illustrated in fig. 1.
As shown in Figure 1, this field effect transistor power amplifier comprises: control circuit, and for single-frequency analog signal is converted to digital signal, and output digit signals; Four integrated drive electronicss, the first port of each integrated drive electronics is connected with control circuit respectively, the second port is connected with a fet power switch pipe respectively, for receiving digital signals, and digital signal is converted into the driving signal for controlling each fet power switch pipe ON time or turn-off time; Output power transformer, is connected with each fet power switch pipe, for by driving signal controlling leading-bridge or lagging leg conducting in the situation that, and the power after output is amplified; Wherein, leading-bridge or lagging leg respectively comprise two fet power switch pipes.
The power amplifier that the above embodiments of the present application realize uses H bridge circuit, by phase-shifting full-bridge control, the digital signal providing by control circuit is embodied as fet power switch pipe provides driving signal, when different with controlling filed effect power switch pipe, open or turn-off, owing to controlling opening or the turn-off time of every power switch pipe, can make it approach no-voltage, flow switch zero point, thereby the loss of fet power switch pipe and the peak voltage bearing are reduced, electric current, improve conversion efficiency, reduce radiator area, and due to fet power switch pipe and drive circuit employing Integration Design, use square wave drives, thereby finally dwindle the volume of power amplifier, reduce the complexity of circuit design.Thereby and owing to adopting H bridge circuit to realize the powerful function of output.
Concrete, the above-mentioned field effect transistor power amplifier of the application adopts bridge Phase shifted PWM Controlled, after outside exciter output single-frequency analog signal, this analog signal is converted to the required digital signal of power amplifier by control circuit, and this digital signal is transferred to drive circuit as a kind of control signal.Drive circuit generates driving signal according to control signal, when this driving signal controlling fet power switch pipe is different, opens or turn-off, and by controlling opening or the turn-off time of every fet power switch pipe, make it approach no-voltage, zero point and flow switch, reduced the loss of fet power switch pipe and peak voltage, the electric current that pipe bears.In the time of leading-bridge or lagging leg conducting, the application's power amplifier just has the amplifying power of output, wherein, in each cycle, first two of conducting fet power switch pipes are called leading-bridge, and two fet power switch pipes of rear conducting are called lagging leg.
As from the foregoing, it is large that the above embodiments of the present application have solved field effect transistor power amplifier circuit complexity, volume that related art realizes, and cannot export the problem of high-power voltage, and then realize the powerful power amplifier of output, and make this power amplifier reach simplicity of design, effect that volume is little.
As illustrated in fig. 1 and 2, in the field effect transistor power amplifier of realizing in the above embodiments of the present application, the G port of the first integrated drive electronics A1 is connected in the grid of the first fet power switch pipe V1, and the drain electrode of the first fet power switch pipe V1 is connected in supply voltage via the first inductance and the first fuse; The G port of the second integrated drive electronics A2 is connected in the grid of the second fet power switch pipe V2, and the drain electrode of the second fet power switch pipe V2 is connected with the source electrode of the first integrated drive electronics A1, the source ground of the second fet power switch pipe V2; The G port of the 4th integrated drive electronics A4 is connected in the grid of the 4th fet power switch pipe V4, and the source electrode of the 4th fet power switch pipe V4 is connected in supply voltage via the second inductance and the second fuse; The G port of the 3rd integrated drive electronics A3 is connected in the grid of the 3rd fet power switch pipe V3, and the source electrode of the 3rd fet power switch pipe V3 is connected with the drain electrode of the 4th integrated drive electronics A4, the grounded drain of the 3rd fet power switch pipe V3; The first end of the primary coil of synthetic transformer is connected in the first node on the drain electrode of the second fet power switch pipe V2 and the source electrode connecting path of the first integrated drive electronics A1 via the first electric capacity, and the second end of the primary coil of synthetic transformer is connected in the Section Point on the source electrode of the 4th fet power switch pipe V4 and the drain electrode connecting path of the 3rd integrated drive electronics A3; Wherein, when driving signal controlling the first fet power switch pipe V1 and the 3rd fet power switch pipe V3 conducting simultaneously, and when the second fet power switch pipe V2 and the 4th fet power switch pipe V4 turn-off simultaneously, supply voltage is applied on the primary coil of synthetic transformer, and by exporting amplifying power after magnetic Field Coupling; Or, when driving signal controlling the second fet power switch pipe V2 and the 4th fet power switch pipe V4 conducting simultaneously, and when the first fet power switch pipe V1 and the 3rd fet power switch pipe V3 turn-off simultaneously, supply voltage is applied on the primary coil of synthetic transformer, and by exporting amplifying power after magnetic Field Coupling.In this embodiment, drive signal as long as realization is controlled any one to the field effect transistor switch pipe conducting compared with on line in a control cycle, the field effect transistor switch pipe on another one diagonal just closes, and output will be exported amplifying power.
Preferably, as shown in Figure 2, field effect transistor power amplifier in the above embodiments of the present application can also comprise: the first diode V6, the positive pole of the first diode V6 is connected in the source electrode of the second fet power switch pipe V2, the negative pole of the first diode V6 is connected in first node, so that after proper driving signal controlling the first fet power switch pipe V1 turn-offs, and control the second fet power switch pipe V2 not before conducting, control the electric current afterflow on the primary coil of synthetic transformer.This embodiment has realized in the situation that guaranteeing output amplifying power, make in the process of switching leading-bridge and lagging leg conducting or shutoff, can for example, owing to there is not the straight-through situation of upper and lower effect power switch pipe (V1 and V2) in handoff procedure, cause being short-circuited and burn the problem of device and power supply.
Preferably, field effect transistor power amplifier in the above embodiments of the present application shown in Fig. 2 can also comprise: the second diode, the positive pole of the second diode is connected in the drain electrode of the 4th fet power switch pipe V4, the negative pole of the second diode is connected in Section Point, so that after proper driving signal controlling the second fet power switch pipe V2 conducting, and before the 4th fet power switch pipe V4 does not turn-off, the electric current of controlling on the primary coil that synthesizes transformer returns via the second diode.In this embodiment, in primary circuit, increase a fast recovery diode V7, made in positive axis clamp process and negative half-cycle current propagation process, prevented that field effect transistor is due to the problem that causes by super-high-current damaging.
Preferably, field effect transistor power amplifier in the above embodiments of the present application can also comprise: the 3rd diode, the positive pole of the 3rd diode is connected in first node, the negative pole of the 3rd diode is connected in supply voltage, so that after proper driving signal controlling the second fet power switch pipe V2 shutoff, and the first fet power switch pipe V1 is before conducting, control the electric current afterflow on the primary coil of synthetic transformer.This embodiment has realized in negative half period power stage process, can be in the process of switching leading-bridge and lagging leg conducting or shutoff, for example, because there is the straight-through situation of upper and lower effect power switch pipe (V3 and V4) in handoff procedure, cause being short-circuited and burn the problem of device and power supply.
Preferably, field effect transistor power amplifier in the above embodiments of the present application can also comprise: the 4th diode, the positive pole of the 4th diode is connected in Section Point, the negative pole of the 4th diode is connected in supply voltage, so that after proper driving signal controlling the first fet power switch pipe V1 conducting, and the 3rd fet power switch pipe V3 is before conducting, the electric current of controlling on the primary coil of synthetic transformer returns via the 4th diode.This embodiment has realized equally and has prevented that field effect transistor is owing to causing damage by super-high-current.
Fig. 3 is according to the pulse sequence schematic diagram of Fig. 1 and driving signal embodiment illustrated in fig. 2.
As shown in Figure 3, the ON time of every fet power switch pipe in the above embodiments of the present application can be set to approach half period, 180 °, therefore, the single spin-echo of two switching tubes of same brachium pontis, controller is controlled ON time and the turn-off time of each fet power switch pipe by the sequential of control integration drive circuit output drive signal, simultaneously, the Modulating Power of power amplifier is to realize by the output voltage of change+E end, supplied with by external dc power, thereby in each complete switch periods, realize the amplifying power that output meets demand.Describe the present invention in detail with a complete switch periods below, complete switch periods of control that controller is realized includes eight courses of work (integrated drive electronics A1 output signal A, integrated drive electronics A2 output signal B, integrated drive electronics A3 output signal C, integrated drive electronics A4 output signal D), make a concrete analysis of as follows:
1,, within the time period of t0～t1, realize the amplifying power output procedure of positive half cycle.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t0～t1 time period, control signal (driving signal) is controlled two field effect transistor of diagonal (V1 and V3) conducting, i.e. V1, V3 conducting simultaneously, makes the service time of two pipes have overlapping part, and this overlapping part-time is diagonal ON time.While driving signal overlapping, electric current is from power positive end → F1 → L1 → V1 → C5 → T1 → V3 → power supply negative terminal (+E → F1 → L1 → V1 → C5 → T1 elementary → V3 → GND), supply voltage is added in transformer, by magnetic Field Coupling, power is sent to secondary resonant tank.
2,, within the time period of t1～t2, realize positive half cycle afterflow process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t1～t2 time period, V1 closes and has no progeny, and V2 is not conducting also, and this period is to establish for preventing that upper and lower two switching tubes of same brachium pontis (V1 and V2) are straight-through, according to the switching time of device, sets Dead Time, and this time can freely be adjusted by control circuit.Because primary inductance value is very large, electric current can not suddenly change, so primary electric current will be by other device afterflow.Electric current from T1 elementary → V3 → GND → V6 → C5 → T1 is elementary, form loop.
3,, within the time period of t2～t3, realize positive half cycle clamp process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t2～t3 time period, V2 conducting, V3 does not also turn-off.Now left and right bridge mid-point voltage approaches 0V, and electric capacity is electric discharge in the other direction, and the sense of current changes.Electric current from C5 → V2 → GND → V7 → T1 elementary → C5.Although still conducting of section V3 at this moment, due to the fast recovery diode of having connected, this branch road no current pass through.
4,, within the time period of t3～t4, realize negative half-cycle current propagation process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t3～t4 time period, V3 turn-offs, also not conducting of V4, and right bridge mid-point voltage raises, and electric current increases gradually, electric current from T1 elementary → C5 → V2 → GND → V7 → T1 is elementary.
5,, within the time period of t4～t5, realize negative half period power stage process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t4～t5 time period, V2, V4 conducting simultaneously.The sense of current is contrary with t0～t1 time period, electric current from+E → F2 → L2 → V4 → T1 elementary → C5 → V2 → GND, supply voltage is added in transformer, by magnetic Field Coupling, power is sent to secondary resonant tank.
6,, within the time period of t5～t6, realize negative half period afterflow process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t5～t6 time period, V2 turn-offs, and V1 is not conducting also.Because primary inductance value is very large, electric current can not suddenly change, so primary electric current will be by other device afterflow.Electric current from+E → V4 → T1 elementary → C5 → V5 → V9 →+E, form loop.
7,, within the time period of t6～t7, realize negative half period clamp process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t6～t7 time period, V1 conducting, V4 does not also turn-off, and now left and right bridge mid-point voltage approaches supply voltage.Electric capacity is electric discharge in the other direction, and the sense of current changes.Electric current from C5 → T1 elementary → V8 → V10 → F1 → L1 → V1 → C5.Although still conducting of section V4 at this moment, due to the fast recovery diode of having connected, this branch road no current pass through.
8,, within the time period of t7～t8, realize positive half cycle current propagation process.
Known in conjunction with Fig. 2 and Fig. 3, specific implementation process is as follows:
In t7～t8 time period, V4 turn-offs, also not conducting of V3, and transformer two ends pressure reduction increases, and electric current increases gradually, electric current from+E → V1 → C5 → T1 elementary → V8 →+E
Preferably, field effect transistor power amplifier in the above embodiments of the present application can also comprise: the second electric capacity and the 3rd electric capacity (C1, C2), first end after two Capacitance parallel connections connect is connected in supply voltage, and the second end ground connection, for realizing the function of DC filtering and energy storage.
Preferably, field effect transistor power amplifier in the above embodiments of the present application can also comprise: the first resistance and the 4th electric capacity (can be R1, C3), and after the first resistance and the 4th capacitances in series, one end is connected with the first inductance, other end ground connection, vibrates for absorbing high-frequency; The second resistance and the 5th electric capacity (can be R2, C4), after the second resistance and the 5th capacitances in series, one end is connected with the second inductance, and other end ground connection is vibrated for absorbing high-frequency.
As shown in Figure 2, each integrated drive electronics in the above embodiments of the present application can comprise: testing circuit, for detecting in real time the magnitude of voltage between integrated drive electronics DK port and SK port, determine integrated drive electronics generation over-current phenomenon avoidance according to magnitude of voltage in the situation that, block integrated drive electronics output drive signal; Processor, blocks for recording integrated drive electronics the blockade number of times that drives signal, and in the situation that blockade number of times exceedes predetermined value, sends complete locking signal to make integrated drive electronics stop automatic unlocking function.
Concrete; the integrated drive electronics relating in the above embodiments of the present application adopts Integrated design, has the function of driving, overcurrent, short circuit, under-voltage protection function, adopts 15V Power supply; input signal+15V/0V unipolarity square wave, output signal+15V/-10V bipolar square wave.And driver output should be generating positive and negative voltage, positive voltage is opened MOSFET, and negative voltage turn-offs pipe.Driver output voltage+12V～+ 15V/-5V～-15V all can, to protect sampling obtaining current or voltage to be as the criterion.In the time having detected in integrated drive electronics that after overcurrent or short circuit or under-voltage signal, blockade is exported, carry out the function of blocking integrated drive electronics output drive signal, blocking time can be set by RC circuit, for example designing RC blocking time is 100mS, after blocking time, integrated drive electronics is carried out automatic unlocking function, when blocking time later integrated drive electronics continues output signal, if detection branch electric current normally lockout circuit no longer work, if still undesired continue block output signal.Said process is fully automatic working, and drive plate inner treater can be counted the number of stoppages, and in the time that 3 faults appear in branch road corresponding to monolithic integrated drive electronics, complete locking inspiriting signal, no longer automatically terminates blockade.Now need by external control signal or manually reset by 15V power supply.
Hence one can see that, the application provides the power amplifier of a kind of 0～30kW that amplifies very low frequency CW, FSK, MSK, OOK signal, concrete, involved MOSFET(V1, V2, V3, V4 in each embodiment shown in the application) module can use IGBT, SiC, BJT device to replace.In the time that MOSFET tube voltage is inadequate, the use of can connecting; When electric current is inadequate, can in parallelly use; Electric current, voltage all can use not time in connection in series-parallel series-parallel connection; C1 can be thin-film capacitor, alminium electrolytic condenser; C2 can be ceramic condenser, electric capacity of the dacron, thin-film capacitor; But C3, C4 mica capacitor, thin-film capacitor, ceramic condenser; C5 can be thin-film capacitor; Diode (led) module (V5, V6, V7, V8, V9, V10) adopts has the diode of quick recovery characteristics, and voltage, current capacity are suitable with MOSFET device.The use of can connecting when voltage is inadequate, but need all press; Electric current can in parallelly use not; R1, R2 can select noninductive resistance, wire-wound resistor; F1, F2 select fuse for protecting semiconductor, have quick defencive function, and voltage, current capacity and MOSFET voltage, electric current ability to bear are suitable; L1, L2 are air core inductor device, the several microhenrys of inductance.According to inductance coiling material difference, can consider whether use skeleton.Do not need containing iron inductance herein; Output power transformer T1, for synthetic transformer, carries out impedance matching for delivering power and with load, and transformer magnet ring adopts ultracrystallite material, and its core material can be ferrite, iron based nano crystal (ultracrystallite); Input, the output of power amplifier signal all adopt aviation plug, and output cable adopts Multi-strand excitation; Cooled plate input, output adopt self-sealing joint.Whole H bridge circuit is arranged on an employing aluminium alloy plate bending welding and panel combination is casing, and its advantage is to have good mechanical strength and shielding properties.Casing inner bottom surface spreads copper coin as circuit ground, and insulate with casing, and circuit ground shields and separates with casing.
The application can also provide a kind of field effect transistor power amplifying system, this system comprises the execution mode of above-mentioned any one field effect transistor power amplifier, and field effect transistor power amplifying system can also comprise: exciter, is connected with control circuit, for single-frequency analog signal is provided.
From above description, can find out, the present invention has realized following technique effect: the power amplifier that the application provides is mainly by many high-power FETs, many fast recovery diodes, polylith integrated drive electronics plate, an output power transformer composition, this power amplifier adopts many field effect transistor, use H bridge circuit, by phase-shifting full-bridge control, while making field effect transistor different, open or turn-off, and by controlling opening or the turn-off time of every power switch pipe, make it approach no-voltage, flow switch zero point, reduce the peak voltage that switching loss and pipe bear, electric current, improve conversion efficiency, reduce radiator area, finally dwindle power amplifier volume.Field effect transistor integrated drive electronics adopts Integration Design, uses square wave to drive, and has reduced switching loss.The measures such as the diode of buffer inductance, absorption capacitance-resistance device and blocking-up circulation have also been taked in power amplifier inside, make it adapt to various input signals, have further improved its job stability.Power stage adopts transformer coupled, and magnetic core is ring-type, uses ultracrystallite material, has high magnetic strength, high permeability, low-loss and excellent temperature stability, replaces well manganese-zinc ferrite in the past.The cooling employing water-cooled of measure, carries out cooling by cooled plate to power device.Very low frequency power amplifier adopted forced air cooling in the past, because current power output strengthens, volume-diminished, power density is excessive, forced air cooling is not suitable for, and water-cooling efficiency is high, and it is more than 20 times that pyroconductivity is traditional air cooling way, and without the high noisy of wind-cooling heat dissipating, cooling and noise reduction problem are solved well.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a field effect transistor power amplifier, is characterized in that, comprising:
Control circuit, for single-frequency analog signal is converted to digital signal, and exports described digital signal;
Four integrated drive electronicss, the first port of each described integrated drive electronics is connected with described control circuit respectively, the second port is connected with a fet power switch pipe respectively, be used for receiving described digital signal, and described digital signal is converted into for controlling fet power switch pipe ON time or the driving signal of turn-off time described in each;
Output power transformer, is connected with fet power switch pipe described in each, for by leading-bridge described in described driving signal controlling or described lagging leg conducting in the situation that, and the power after output is amplified;
Wherein, described leading-bridge or described lagging leg respectively comprise two described fet power switch pipes.
2. field effect transistor power amplifier according to claim 1, is characterized in that,
The G port of the first integrated drive electronics is connected in the grid of the first fet power switch pipe, and the drain electrode of described the first fet power switch pipe is connected in described supply voltage via the first inductance and the first fuse;
The G port of the second integrated drive electronics is connected in the grid of the second fet power switch pipe, and the drain electrode of described the second fet power switch pipe is connected with the source electrode of described the first integrated drive electronics, the source ground of described the second fet power switch pipe;
The G port of the 4th integrated drive electronics is connected in the grid of the 4th fet power switch pipe, and the source electrode of described the 4th fet power switch pipe is connected in described supply voltage via the second inductance and the second fuse;
The G port of the 3rd integrated drive electronics is connected in the grid of the 3rd fet power switch pipe, and the source electrode of described the 3rd fet power switch pipe is connected with the drain electrode of described the 4th integrated drive electronics, the grounded drain of described the 3rd fet power switch pipe;
The first end of the primary coil of described synthetic transformer is connected in the first node on the drain electrode of described the second fet power switch pipe and the source electrode connecting path of described the first integrated drive electronics via the first electric capacity, and the second end of the primary coil of described synthetic transformer is connected in the Section Point on the source electrode of described the 4th fet power switch pipe and the drain electrode connecting path of described the 3rd integrated drive electronics;
Wherein, when the first fet power switch pipe described in described driving signal controlling and the conducting simultaneously of the 3rd fet power switch pipe, and when described the second fet power switch pipe and described the 4th fet power switch pipe turn-off simultaneously, described supply voltage is applied on the primary coil of described synthetic transformer, and by exporting described amplifying power after magnetic Field Coupling;
Or, when the second fet power switch pipe described in described driving signal controlling and the conducting simultaneously of the 4th fet power switch pipe, and when described the first fet power switch pipe and described the 3rd fet power switch pipe turn-off simultaneously, described supply voltage is applied on the primary coil of described synthetic transformer, and by exporting described amplifying power after magnetic Field Coupling.
3. field effect transistor power amplifier according to claim 2, is characterized in that, described field effect transistor power amplifier also comprises:
The first diode, the positive pole of described the first diode is connected in the source electrode of described the second fet power switch pipe, the negative pole of described the first diode is connected in described first node, so that after described in proper described driving signal controlling, the first fet power switch pipe turn-offs, and control described the second fet power switch pipe not before conducting, control the electric current afterflow on the primary coil of described synthetic transformer.
4. field effect transistor power amplifier according to claim 2, is characterized in that, described field effect transistor power amplifier also comprises:
The second diode, the positive pole of described the second diode is connected in the drain electrode of described the 4th fet power switch pipe, the negative pole of described the second diode is connected in described Section Point, so that described in proper described driving signal controlling after the second fet power switch pipe conducting, and before described the 4th fet power switch pipe does not turn-off, the electric current of controlling on the primary coil of described synthetic transformer returns via described the second diode.
5. field effect transistor power amplifier according to claim 2, is characterized in that, described field effect transistor power amplifier also comprises:
The 3rd diode, the positive pole of described the 3rd diode is connected in described first node, the negative pole of described the 3rd diode is connected in described supply voltage, so that after described in proper described driving signal controlling, the second fet power switch pipe turn-offs, and described the first fet power switch pipe is before conducting, control the electric current afterflow on the primary coil of described synthetic transformer.
6. field effect transistor power amplifier according to claim 2, is characterized in that, described field effect transistor power amplifier also comprises:
The 4th diode, the positive pole of described the 4th diode is connected in described Section Point, the negative pole of described the 4th diode is connected in described supply voltage, so that described in proper described driving signal controlling after the first fet power switch pipe conducting, and described the 3rd fet power switch pipe is before conducting, the electric current of controlling on the primary coil of described synthetic transformer returns via described the 4th diode.
7. field effect transistor power amplifier according to claim 2, is characterized in that, described field effect transistor power amplifier also comprises:
The second electric capacity and the 3rd electric capacity, the first end after two Capacitance parallel connections connect is connected in described supply voltage, and the second end ground connection, for DC filtering and energy storage.
8. field effect transistor power amplifier according to claim 2, is characterized in that, described field effect transistor power amplifier also comprises:
The first resistance and the 4th electric capacity, after described the first resistance and the 4th capacitances in series, one end is connected with described the first inductance, and other end ground connection, vibrates for absorbing high-frequency;
The second resistance and the 5th electric capacity, after described the second resistance and the 5th capacitances in series, one end is connected with described the second inductance, and other end ground connection, vibrates for absorbing high-frequency.
9. field effect transistor power amplifier according to claim 1, is characterized in that, each described integrated drive electronics comprises:
Testing circuit, for detecting in real time the magnitude of voltage between described integrated drive electronics DK port and SK port, in the situation that determining described integrated drive electronics generation over-current phenomenon avoidance according to described magnitude of voltage, block described integrated drive electronics and export described driving signal;
Processor, blocks the blockade number of times of described driving signal, and in the situation that described blockade number of times exceedes predetermined value, sends complete locking signal to make described integrated drive electronics stop automatic unlocking function for recording described integrated drive electronics.
10. a field effect transistor power amplifying system, is characterized in that, comprises the field effect transistor power amplifier described in any one in claim 1 to 9, and described field effect transistor power amplifying system also comprises:
Exciter, is connected with described control circuit, for described single-frequency analog signal is provided.
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| CN201210469805.1A CN103825562B (en) | 2012-11-19 | 2012-11-19 | FET power amplifier and system |
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| CN103825562B CN103825562B (en) | 2017-08-25 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106100596A (en) * | 2016-08-17 | 2016-11-09 | 北京北广科技股份有限公司 | A kind of power amplifying system of very low frequency Liquid-cooled Solid-state Transmitter |
| CN109495092A (en) * | 2018-11-19 | 2019-03-19 | 深圳市格瑞普智能电子有限公司 | Power switch tube drives circuit and driving method |
| CN113708451A (en) * | 2021-08-27 | 2021-11-26 | 浪潮商用机器有限公司 | Super capacitor charging circuit |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1315251C (en) * | 2002-10-08 | 2007-05-09 | 中国科学院电工研究所 | Phase-shift full-bridge high-frequency inverter based on DSP |
| US7656202B2 (en) * | 2006-05-15 | 2010-02-02 | Asahi Kasei Emd Corporation | Driving device and driving method |
| CN100438292C (en) * | 2006-11-09 | 2008-11-26 | 北京航空航天大学 | Digital switch power amplifier for magnetic suspension flywheel magnetic bearing system |
| CN100538095C (en) * | 2007-08-24 | 2009-09-09 | 北京航空航天大学 | A kind of switch power amplifier that is used for magnetic bearing system based on space vector technique |
| CN201203506Y (en) * | 2008-05-28 | 2009-03-04 | 苏州试验仪器总厂 | Power output circuit of electric oscillating table |
| CN201403075Y (en) * | 2009-03-17 | 2010-02-10 | 中国船舶重工集团公司第七一〇研究所 | Multi-way PWM signal power amplifier |
| CN203086408U (en) * | 2012-11-19 | 2013-07-24 | 北京北广科技股份有限公司 | Field-effect tube power amplifier and system |
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2012
- 2012-11-19 CN CN201210469805.1A patent/CN103825562B/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106100596A (en) * | 2016-08-17 | 2016-11-09 | 北京北广科技股份有限公司 | A kind of power amplifying system of very low frequency Liquid-cooled Solid-state Transmitter |
| CN109495092A (en) * | 2018-11-19 | 2019-03-19 | 深圳市格瑞普智能电子有限公司 | Power switch tube drives circuit and driving method |
| CN113708451A (en) * | 2021-08-27 | 2021-11-26 | 浪潮商用机器有限公司 | Super capacitor charging circuit |
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| CN103825562B (en) | 2017-08-25 |
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