CN103824935B - A kind of Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite and the application of electric field regulation and control spin-flip - Google Patents
A kind of Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite and the application of electric field regulation and control spin-flip Download PDFInfo
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- CN103824935B CN103824935B CN201410071849.8A CN201410071849A CN103824935B CN 103824935 B CN103824935 B CN 103824935B CN 201410071849 A CN201410071849 A CN 201410071849A CN 103824935 B CN103824935 B CN 103824935B
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Abstract
A kind of Ni Mn base ferromagnetic shape memory alloy/piezoelectric composite, Ni Mn base ferromagnetic shape memory alloys constitutes composite with piezoelectric；Piezoelectric is PMN PT monocrystalline；The molecular formula of Ni Mn base ferromagnetic shape memory alloys is Ni Mn Sn, two kinds of materials are all that flaky material pastes synthetic composite material, the thickness of ferromagnetic shape memory alloys is that the fast quenching thin strap of 20 50um is overlapped into 1 2mm or is the bulk of 1 2mm, and piezoelectrics thickness is 0.5mm.The present invention utilizes the interface coupling that stress regulation Ni Mn base memorial alloy that piezoelectrics produce is antiferromagnetic and ferromagnetic, and the exchange bias effect regulated and controled by electric field achieves the spin-flip that electric field regulates and controls in zero offset field.
Description
Technical field
The present invention relates to a kind of Ni-Mn base ferromagnetic shape memory alloy/piezoelectric with electric field regulation and control spin-flip characteristic
Composite.
Technical background
The spin-flip of electric field regulation and control, before the fields such as high density storage, sensor and spintronics are widely used
Scape.Electric field regulation and control are all reported at present in the systems such as single phase multi-iron material, magnetic tunnel-junction, ferromagnetic/piezoelectricity (ferroelectricity)
Spin-flip.Control methods are mainly reflected in and control spin by electric field change coercivity, magnetic domain and magneto-resistor change
Upset.But the upset of electric field spin regulation and control could realize and need big the most under cryogenic in single phase multi-iron material
Extracorporeal magnetic driving, consumes huge energy；Magnetic tunnel-junction is easily limited by regional condition, requires equipment and instrument extremely harsh,
Complicated process of preparation is unfavorable for device miniaturization.So the spin-flip of electric field regulation and control under research low energy consumption, zero offset magnetic field
It it is a scientific issues urgently to be resolved hurrily in field of storage.
Exchange bias effect causes, because it has broad application prospects in the field such as sensor, magnetic recording, the pass that people are close
Note.High manganese Ni-Mn base ferromagnetic shape memory alloys coexists bigger friendship due to antiferromagnetic and ferromagnetic coupling during low temperature
Changing biasing phenomenon, Mn-Mn interatomic anti-ferromagnetic exchange interaction counter stress is extremely sensitive simultaneously.
Summary of the invention
It is an object of the present invention to provide a kind of Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite and
Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite and have electric field regulation and control spin-flip characteristic application.
Technical scheme: a kind of Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite, Ni-Mn base iron
Magnetic marmem constitutes composite with piezoelectric；Piezoelectric is PMN-PT monocrystalline；Ni-Mn base ferro-magnetic shape
The molecular formula of memorial alloy is Ni-Mn-Sn, and two kinds of materials are all that flaky material pastes synthetic composite material, ferromagnetic shape memory
The thickness of alloy is that the fast quenching thin strap of 20-50um is overlapped into 1-2mm or the bulk for 1-2mm, and piezoelectrics thickness is
0.5mm。
Described composite is by electric field regulation and control spin-flip characteristic:
Added electric field produces stress, electric-field intensity scope: 0-4kV/cm by piezoelectric；Ni-Mn base ferromagnetic shape memory
The exchange bias field of alloy changes, exchange bias field excursion: 0-122Oe, simultaneous coercivity and full
With the change of the intensity of magnetization, coercivity excursion: 0-94Oe, saturation magnetization excursion: 0-2.38emu/g,
After within added electric field, spin-flip, electric-field intensity scope 4kV/cm is realized during zero magnetic field；
The stress that added electric field is produced by piezoelectrics, nothing in Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite
Bias magnetic field is needed to realize the spin-flip of electric field regulation and control.
The information storing process using " reading of autotelegraph magnetic " to realize, is more beneficial for the practical design of device, at low energy consumption, height
Density field of storage has the highest using value.
There is the Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite of electric field regulation and control spin-flip characteristic.It should
With being
(1) by applying electric field to piezoelectrics, the exchange bias field of Ni-Mn base ferromagnetic shape memory alloys can be regulated, regulate simultaneously
Coercivity and saturation magnetization.
(2) under zero offset magnetic field, by applying electric field to composite, it is possible to achieve spin-flip.
(3) the regulation and control spin-flip of the electric field under zero offset magnetic field is utilized can to realize the data storing mode of " reading of autotelegraph magnetic ", it is ensured that
The high efficiency of reading and writing data and stability, be conducive to development low energy consumption high-density memory device.
Present invention have the advantages that, it is compound that selection Ni-Mn base ferromagnetic shape memory alloys and piezoelectrics PMN-PT synthesize
Material, the stress utilizing piezoelectrics to produce regulates the interface coupling that Ni-Mn base memorial alloy is antiferromagnetic and ferromagnetic, by electricity
The exchange bias effect of field regulation and control achieves the spin-flip of electric field regulation and control in zero offset field.Utilize that electric field regulates and controls from conpound salto
Turn, it is possible to achieve the novel memory devices part of high density, low energy consumption, fast reading and writing and high stable.
Accompanying drawing explanation
After Fig. 1 added electric field, the mechanical stress that piezoelectrics produce passes to Ni-Mn base ferromagnetic shape memory alloys, causes material
Material magnetic property change schematic diagram.
After Fig. 2 is by adding a certain electric field X, Ni-Mn base ferromagnetic shape memory alloys is at different temperatures (T1Figure (a) and
T2Figure (b)) exchange biased, coercivity and saturation magnetization generation significant change.
Fig. 3 is by zero offset magnetic field added electric field, spin-flip schematic diagram.As shown in figure (a), add a certain electric field X
After, spin is by M1It is turned to M2, symbol is by just to negative change simultaneously.Figure (b) be electric field regulation and control by bear positive from
Conpound salto turns.
Specific embodiments
Shown in Fig. 1, by applying electric field to piezoelectrics, the stress that piezoelectrics produce acts on Ni-Mn base ferro-magnetic shape note
Recall on alloy, the interface coupling that this stress influence is antiferromagnetic and ferromagnetic, thus regulate and control exchange biased and spin-flip.Grind
Studying carefully result to show, by applying electric field to piezoelectrics, exchange biased there occurs of Ni-Mn base ferromagnetic shape memory alloys changes
Become, and with coercivity and the change of saturation magnetization, spin symbol overturns with electric field.The measurement of magnetic shows
By applying electric field in zero offset magnetic field, spin overturns, and can reduce energy loss, improve storage density.
Composite be piezoelectric be PMN-PT monocrystalline；The molecular formula of Ni-Mn base ferromagnetic shape memory alloys is
Ni-Mn-Sn, two kinds of materials are all flaky material laminatings, and wherein the thickness of ferromagnetic shape memory alloys is 30 microns fast
Strip of quenching overlaps or is 1mm, and piezoelectrics thickness is 0.5mm.
Fig. 2 be above-mentioned sample by adding a certain electric field 0.5kV/cm after, Ni-Mn base ferromagnetic shape memory alloys is in difference
Temperature (room temperature=T1Figure (a) and 80 DEG C=T2Figure (b)) exchange biased, coercivity and saturation magnetization occur bright
Aobvious change.General T1 and T2 temperature is also depending on concrete material context.
Fig. 3 is by zero offset magnetic field added electric field, spin-flip schematic diagram.As shown in figure (a), add after a certain electric field X (1kV/cm),
Spin is by M1It is turned to M2, symbol is by just to negative change simultaneously.Figure (b) is the positive from conpound salto by bearing of electric field regulation and control
Turn.
Claims (2)
- The application of 1.Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite, it is characterised in that use Ni-Mn base ferromagnetic shape memory alloys to constitute composite with piezoelectric；Piezoelectric is PMN-PT monocrystalline；The molecular formula of Ni-Mn base ferromagnetic shape memory alloys is Ni-Mn-Sn, and two kinds of materials are all that flaky material pastes synthetic composite material, and the thickness of ferromagnetic shape memory alloys is that the fast quenching thin strap of 20-50 um is overlapped into 1-2 Mm or be the bulk of 1-2 mm, piezoelectrics thickness is 0.5 mm；Described composite is by electric field regulation and control spin-flip characteristic:A) added electric field produces stress, electric-field intensity scope: 0-4 by piezoelectric kV/cm；The exchange bias field of Ni-Mn base ferromagnetic shape memory alloys changes, exchange bias field excursion: 0-122 Oe, simultaneous coercivity and the change of saturation magnetization, coercivity excursion: 0-94 Oe, saturation magnetization excursion: 0-2.38 emu/g, after within added electric field, spin-flip, electric-field intensity scope 4 is realized during zero magnetic field kV/cm；B) stress that added electric field is produced by piezoelectrics, realizes the spin-flip of electric field regulation and control in Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite without bias magnetic field.
- The application of Ni-Mn base ferromagnetic shape memory alloy/piezoelectric composite the most according to claim 1, it is characterised in that use the information storage that " reading of autotelegraph magnetic " realizes.
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| CN110484802A (en) * | 2019-08-30 | 2019-11-22 | 广州大学 | A kind of ferromagnetic shape memory alloy with nanometer Eutectic structure |
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| CN104674161B (en) * | 2015-03-18 | 2017-03-01 | 北京科技大学 | The method improving the Quantum geometrical phase intensity of Co/Pt thin-film material |
| CN112993149B (en) * | 2021-02-06 | 2023-06-16 | 浙江驰拓科技有限公司 | Storage unit |
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| JP2006286713A (en) * | 2005-03-31 | 2006-10-19 | Osaka Univ | Magnetoresistive element and method of magnetization reversal |
| US8129043B2 (en) * | 2009-04-14 | 2012-03-06 | Hitachi Global Storage Technologies Netherlands B.V. | System, method and apparatus for strain-assisted magnetic recording for controlling switching field and tightening switching field distribution in bit patterned media |
| CN101982893A (en) * | 2010-10-13 | 2011-03-02 | 南京大学 | Ni-Mn based ferromagnetic shape memory alloy/piezoelectric composite and application in magnetoelectric effect thereof |
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| CN110484802A (en) * | 2019-08-30 | 2019-11-22 | 广州大学 | A kind of ferromagnetic shape memory alloy with nanometer Eutectic structure |
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