CN103823334A - Formation method for graphical photoresist - Google Patents
Formation method for graphical photoresist Download PDFInfo
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- CN103823334A CN103823334A CN201410081194.2A CN201410081194A CN103823334A CN 103823334 A CN103823334 A CN 103823334A CN 201410081194 A CN201410081194 A CN 201410081194A CN 103823334 A CN103823334 A CN 103823334A
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Abstract
The invention discloses a formation method for graphical photoresist. The formation method comprises the steps as follows: firstly, a semiconductor substrate is provided, wherein a photoresist layer is formed on the semiconductor substrate and the thickness of the photoresist layer is larger than and equal to 1 mu m; secondly, soft baking and exposure are conducted on the photoresist layer in sequence; thirdly, a wetting agent is sprayed onto the surface of the exposed photoresist layer, spray parameters are optimized and a wetting layer is formed on the surface of the exposed photoresist layer; finally, a development treatment is conducted on the surface-wetted photoresist layer to form a patternized photoresist layer. Through adopting the method provided by the invention, the development uniformity of thick photoresist is improved, the time for forming the patternized photoresist layer is largely shortened under the premise that no bubble-shaped defect is generated, and the production efficiency is improved.
Description
Technical field
The present invention relates to semiconductor applications, relate in particular to a kind of formation method of graphical photoresist.
Background technology
Photoetching process is one of technique of use in chip manufacturing technology the most frequent, most critical.Semiconductor devices, photoelectric device etc. all need by photoetching process, the light mask pattern of required basic composition unit and circuit to be transferred on the photoresist of semiconductor substrate surface, form graphical photoresist, then take graphical photoresist as mask, Semiconductor substrate is carried out to etching and Implantation.
In the time that chip is carried out to heavily doped Implantation, just need to form the thick photoresist that thickness is more than or equal to 1 micron at chip surface.In prior art, the formation method of thick photoresist figure is specific as follows:
First, apply photoresist layer on chip, the thickness of described photoresist layer is more than or equal to 1 micron.Chip temperature is brought up to 90 degrees Celsius to 120 degrees Celsius and carry out soft baking 30 seconds～90 seconds, then cooling, to remove the solvent in photoresist layer, becomes photoresist solid-state.Photoresist layer after soft baking is exposed, the chip after exposure is placed on vacuum cup, then to the photoresist surface sprinkling deionized water after exposure.The parameter of spraying deionized water is: the rotating speed of vacuum cup is set to 20 revs/min, and the time of spraying deionized water is 10 seconds.Then, the photoresist that sprays deionized water is carried out to development treatment.Wherein, the parameter of development treatment is: the rotating speed of vacuum cup is set to 30 revs/min, and the time of spray developing liquid is 1 second.So, can make developer solution cover silicon chip surface completely and in development step subsequently, on photoresist, form figure.Last post bake cures graphical photoresist, further to vapor away remaining photoresist solvent, improves the adhesiveness of photoresist to crystal column surface.Finally graphical photoresist layer is checked, find out problematic graphical photoresist.
Adopt the aliasing of the thick graphical photoresist of the method formation of prior art, the critical size (CD) of the device obtaining and target size generation difference, cannot meet the demands dimensions of semiconductor devices.
Summary of the invention
The problem that the present invention solves is the aliasing that adopts the thick graphical photoresist of the method formation of prior art, and the critical size (CD) of the device obtaining and target size generation difference, cannot meet the demands dimensions of semiconductor devices.
For addressing the above problem, the invention provides a kind of formation method of graphical photoresist: comprise
Semiconductor substrate is provided, in described Semiconductor substrate, forms photoresist layer, the thickness of described photoresist layer is more than or equal to 1 micron;
Described photoresist layer is carried out to soft baking and exposure successively;
Photoresist layer surface sprinkling wetting agent after described exposure, optimizes described spraying parameter, and the photoresist layer surface after described exposure forms wetting layer;
The photoresist layer that forms wetting layer is carried out to development treatment, form the photoresist layer of patterning.
Optionally, described wetting agent is deionized water.
Optionally, the method for the photoresist layer surface sprinkling wetting agent after described exposure comprises:
Described Semiconductor substrate is placed on vacuum cup, and described vacuum cup top is provided with the first nozzle sets, and described vacuum cup horizontally rotates with respect to described the first nozzle sets;
Described sprinkling wetting agent parameter is: the rotating speed that described vacuum cup sprays when deionized water in the first nozzle sets is 1000～2000 revs/min, described the first nozzle sets to the time of described photoresist layer surface sprinkling deionized water be 1～3 second.
Optionally, the photoresist layer that forms wetting layer is carried out before development treatment, also comprise that the photoresist layer to forming wetting layer dries.
Optionally, the method for described drying comprises:
The rotating speed of described vacuum cup in the time drying is set to 1200～1800 revs/min, and the time of described drying is 2～4 seconds.
Optionally, the method for described development treatment comprises:
Described Semiconductor substrate is arranged on vacuum cup, described Semiconductor substrate is circular, described vacuum cup top preset distance is provided with second nozzle group, nozzle in described second nozzle group is arranged along described Semiconductor substrate diametric(al), described spread length is more than or equal to described semiconductor diameter, and described vacuum cup horizontally rotates with respect to described second nozzle group;
The rotating speed of described vacuum cup in the time of second nozzle group spray developing liquid is 30～60 revs/min, and the time that described second nozzle group is sprayed at the developer solution on described photoresist layer surface is 1～2 second.
Optionally, described preset distance is for being more than or equal to 1 millimeter and be less than or equal to 3 millimeters.
Optionally, the distance between the measure-alike and described nozzle of the each nozzle in described second nozzle group equates.
Optionally, the time of described soft baking is more than or equal to 60s and is less than or equal to 90s.
Compared with prior art, technical scheme of the present invention has the following advantages:
Optimize described spraying parameter, the thick photoresist layer surface after wetting described exposure.But do not allow wetting agent be immersed in the inside of thick photoresist layer, surface at described thick photoresist forms wetting layer, thereby avoid inner differential expansion and the generation blister defect of occurring of thick photoresist layer, make developer solution can evenly and fully cover photoresist surface simultaneously, like this developer solution can be easier and more all even photoresist layer react, thereby in avoiding blister defect, improve developing uniformity, improved the homogeneity of the critical size (CD) of device.
In addition, technical scheme of the present invention does not increase the soft baking time, even also short than the time of photoresist that forms patterning in prior art.Therefore, under the prerequisite that does not affect production efficiency, solve just inner differential expansion and the generation blister defect problem of occurring of thick photoresist layer, reach the effect of " fish and bear's paw get both ".
Accompanying drawing explanation
Fig. 1 is the cross-sectional view that adopts the thick photoresist layer thickness direction before the step of spray developing liquid of the method formation of prior art;
Fig. 2 is the partial devices structural representation that sprays wetting agent on photoresist layer surface in the specific embodiment of the invention;
Fig. 3 is the partial devices structural representation that carries out spray developing liquid on photoresist layer surface in the specific embodiment of the invention.
Embodiment
The reason of the aliasing of the thick graphical photoresist that the method for employing prior art forms is as follows:
The thickness of thick photoresist layer is more than or equal to 1 micron, and in prior art, and it is identical that formation method and the thickness of thick photoresist is less than the formation method of thin photoresist of 1 micron.Specific as follows: the soft baking time of thick photoresist is identical with the soft baking time of thin photoresist.Under this soft baking time, the solvent 99% in thin photoresist has volatilized completely, and thin photoresist hardness after soft baking is higher.And solvent in thick photoresist volatilization is unclean, make the thick photoresist quality after soft baking softer.
Then, the thick photoresist surface after soft baking is sprayed the step of deionized water.Why spraying deionized water, is that the photoresist surface after soaking because of deionized water can form less contact angle with developer solution, and under less contact angle, developer solution just can react by the surperficial also uniform and photoresist of easier covering photoresist.For thin photoresist, the photoresist hardness after soft baking is higher, and deionized water is sprayed at the surface of thin photoresist, and deionized water is not easy to infiltrate the inside of thin photoresist, and only forms wetting layer on the surface of thin photoresist.But under identical condition, when deionized water is sprayed at softer thick photoresist surface, water can infiltrate the inside of thick photoresist easily.Too much water and residual solvent are longer in the thick photoresist internal stops time, can make the inside of thick photoresist that differential expansion occurs, and form " bubble " in the inside of thick photoresist, form blister defect in the inside of thick photoresist.Fig. 1 be on thick photoresist 10, spray deionized water step finish after, thick photoresist on thick photoresist 10 before spray developing liquid step is in the cross-sectional view of thickness direction.With reference to figure 1, form blister defect 11 in the inside of thick photoresist 10.Blister defect 11 makes photoresist surface inhomogeneous, for example, forms circular bulge on the surface of photoresist, thereby affects follow-up development effect on thick photoresist, makes the aliasing of thick graphical photoresist.
In addition, staying the more water of silicon chip surface can have diluting effect to developer solution, reduces the concentration of follow-up developer solution, further affects the development effect of follow-up developer solution, makes the aliasing of thick graphical photoresist.
The aliasing of thick graphical photoresist, affects the homogeneity of the anti-etching or anti-injectability of thick photoresist, and the homogeneity variation of the critical size (CD) of the follow-up device obtaining, cannot meet the demands dimensions of semiconductor devices.
For solving the problems of the technologies described above, inventor once attempted increasing the time of soft baking and improved the hardness of thick photoresist, thereby made deionized water be not easy to infiltrate the inside of thick photoresist, can form soakage layer on the surface of thick photoresist.But the time of soft baking at least needs to be increased to ten minutes ability and reaches and need hardness, has greatly extended and has made the patterned photoresist process time, makes patterned photoresist inefficiency, therefore, increase the method for soft baking time inapplicable.
In order to solve the problems of the technologies described above, the invention provides a kind of formation method of graphical photoresist.Can prevent the aliasing of thick graphical photoresist, can there is not difference with target size in the critical size (CD) of the device obtaining, thereby dimensions of semiconductor devices is met the demands.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiments of the invention are described in detail.
With reference to figure 2, execution step S11, provides Semiconductor substrate 20, in described Semiconductor substrate 20, forms photoresist layer 21, and the thickness of described photoresist layer 21 is more than or equal to 1 micron.
Then, form photoresist layer 21 in described Semiconductor substrate 20 before, be also included in Semiconductor substrate 20 and carry out gas phase and become the step of counterdie, specific as follows: Semiconductor substrate 20 to be cleaned to remove and stain thing, then dewater and cure.After curing, adopt HMDS (HMDS) to help adhesion process, improve the photoresist layer of follow-up formation and the adhesiveness of Semiconductor substrate.In the present embodiment, form and help after adherent coating on substrate 20 surfaces, adopt immediately the method for spin coating on backing material, evenly to coat liquid phase photoresist layer.The thickness of photoresist layer is for being greater than 1 micron.
Then, execution step S12, carries out soft baking and exposure to described photoresist layer.
In the present embodiment, for increase form patterning thick photoresist layer process time, still to thick photoresist layer adopt soft baking method of the prior art.Be specially: the temperature of Semiconductor substrate is brought up to 90 degrees Celsius to 120 degrees Celsius, soft baking 30 seconds～90 seconds, then cooling, to remove the solvent in thick photoresist layer.Make liquid phase photoresist layer become solid phase.It should be noted that, in the present embodiment, just because of the soft baking time of thick photoresist layer is identical with the soft baking time of thin photoresist layer, the solvent in thick photoresist layer not volatilization is clean, makes the thick photoresist layer quality after soft baking softer.
Photoresist layer surface coverage after described soft baking has the mask plate (not shown) that sets in advance good pattern, after mask plate and photoresist layer are aimed at, with ultraviolet ray from top photolithography glue-line, photoresist generation photosensitized reaction, realize exposure, the pattern on this mask plate is transferred on photoresist layer.Concrete technology, for those skilled in the art know technology, does not repeat them here.
Then, continue with reference to figure 2, execution step S13, the photoresist layer 21 surface sprinkling wetting agents after described exposure, optimize described spraying parameter, and photoresist layer 21 surfaces after described exposure form wetting layer 25.
In the present embodiment, wetting agent is deionized water.Why be deionized water, can reach very desirable wetting effect to the wetting of photoresist on the one hand, on the other hand, can, in follow-up development step, not increase new ion, prevent the developer solution of contaminate subsequent.Certainly, in other embodiment, wetting agent can be also other solvents, as long as can play the effect of wetting photoresist layer 21, but also the wetting agent of the developing process of contaminate subsequent does not all belong to protection scope of the present invention.Photoresist layer 21 surface sprinkling deionized waters after exposure, and form wetting layer 25(with reference to figure 3 on photoresist layer 21 surface) method as follows:
Described Semiconductor substrate 20 is arranged on vacuum cup 22, and described vacuum cup 22 tops are provided with the first nozzle sets 23, the first nozzle sets 23 for spraying deionized water.In the present embodiment, vacuum cup 22 is circular.Semiconductor substrate 20 and on photoresist layer 21 be also circular.The first nozzle sets 23 comprises two nozzles, and one of them nozzle 231 sprays deionized water at the center of photoresist layer, another nozzle 232 photoresist layer 21 radiuses 1/2nd to 2/3rds between spray deionized water.Described vacuum cup 22 is by the electric rotating machine driven rotary of controlling vacuum cup, and therefore, vacuum cup 22 horizontally rotates with respect to described the first nozzle sets 23.Vacuum cup 22 can turn clockwise and also can be rotated counterclockwise.The direction of arrow in Fig. 3 is the sense of rotation of vacuum cup 22.
Spraying wetting agent parameter is: the rotating speed of vacuum cup 22 in the time that the first nozzle sets 23 is sprayed deionized water is 1000～2000 revs/min, the first nozzle sets 23 to the time of described photoresist layer 21 surface sprinkling deionized waters be 1～3 second.
With respect to prior art, in the present embodiment, the rotating speed of vacuum cup is improved to 50～100 times, will spray the time reduction 1/9/10ths～tri-of deionized water.The shortening of the time of the vacuum cup of High Rotation Speed and sprinkling deionized water not only can make deionized water only rest on the surface of photoresist layer, does not infiltrate to the inside of photoresist layer 21.Therefore, can avoid too much water and residual solvent longer in the 21 internal stops time of thick photoresist layer, thereby avoid the inside of thick photoresist layer that differential expansion occurs, form " bubble " in the inside of thick photoresist, avoid forming blister defect in the inside of thick photoresist layer.In addition, the shortening of the time of the vacuum cup of High Rotation Speed and sprinkling deionized water can also make deionized water cover the whole area of photoresist layer 21, forms one deck wetting layer 25 evenly and as thin as a wafer on the surface of photoresist layer.Wetting layer 25 can make photoresist layer 21 moistened surfaces, and can not produce bubble on the surface of photoresist layer 21, in subsequent step, developer solution can cover photoresist layer 21 surfaces uniformly, like this developer solution can be easier and more all even photoresist layer react, thereby improved development effect.Moreover in the present embodiment, the method that shortens the sprinkling deionized water time has improved the efficiency of the graphical photoresist process of whole making.
The rotating speed of vacuum cup 22 in the time that the first nozzle sets 23 is sprayed deionized water is too low or oversize in the time of the surface sprinkling deionized water of photoresist layer, the deionized water on photoresist layer surface is relatively long in the photoresist layer surface residence time, deionized water can infiltrate the inside to photoresist layer, can form blister defect in the inside of photoresist layer.If the rotating speed of vacuum cup is too fast or too short in the time of the surface sprinkling deionized water of photoresist layer, deionized water cannot all cover photoresist layer, thereby cannot form one deck wetting layer on the surface of photoresist layer.
It should be noted that, in the present embodiment, two important determinatives that form wetting layers 25 on photoresist layer 21 surface are the rotating speed of vacuum cup 22 in the time that the first nozzle sets 23 is sprayed deionized water and nozzle sets 23 time to described photoresist layer 21 surface sprinkling deionized waters.Therefore, in other embodiment, as long as the rotating speed of vacuum cup is 1000～2000 revs/min, the nozzle of other types, as long as meet to the deionized time of photoresist layer surface sprinkling be 1～3 second, also can form soakage layer on the surface of photoresist layer.
In the present embodiment, form after wetting layer 25 on the surface of photoresist layer 21, stop to the operation of described photoresist layer 21 surface sprinkling deionized waters, the photoresist layer 21 that forms wetting layer is also carried out to drying step.The method of described drying comprises: the rotating speed of described vacuum cup in the time drying is set to 1200～1800 revs/min, and the time of described drying is 2～4 seconds.
Spin-drying operation can further be removed the unnecessary deionized water on the photoresist layer surface that forms wetting layer, makes wetting layer more even.
When spin-drying operation, if the rotating speed setting of vacuum cup in the time the drying time too high, that dry is oversize, easily the part wetting layer part on photoresist layer surface is thrown away, thus the wetting layer on destruction photoresist layer surface.If the rotating speed setting of vacuum cup in the time the drying time too low, that dry is too short, unnecessary deionized water meeting dilute development liquid, thus form inhomogeneous development liquid layer on the surface of photoresist, the homogeneity that impact is developed.
In other embodiment, also can not carry out spin-drying operation, also can implement the present invention.
Then,, with reference to figure 3, execution step S14, carries out development treatment to the photoresist layer 21 that forms wetting layer 25, forms the photoresist layer of patterning.
Nozzle in second nozzle group 24 is arranged along Semiconductor substrate 20 diametric(al)s, and spread length is more than or equal to semiconductor 20 diameters.In second nozzle group 24, the set-up mode of each nozzle has two kinds: the first set-up mode is: distance between the measure-alike and nozzle of each nozzle equates, for example, and the E-two model nozzle (E-two nozzle) of Japanese TEL company.The second set-up mode is: the size of each nozzle is different, and each nozzle to the distance between nozzle sets mid point that size is different is also different, and still, the size of each nozzle and described each nozzle are to the Range-based of nozzle sets mid point.For example, the E-Three model nozzle (E-Three nozzle) of Japanese TEL company.The electric rotating machine of controlling vacuum cup 22 drives vacuum cup 22 to horizontally rotate with respect to second nozzle group 24.Vacuum cup 22 can turn clockwise and also can be rotated counterclockwise.The direction of arrow in Fig. 3 is the sense of rotation of vacuum cup 22 in the time of second nozzle group spray developing liquid.
In the present embodiment, the rotating speed of vacuum cup in the time of second nozzle group spray developing liquid is 30～60 revs/min, and the time that described second nozzle group is sprayed at the developer solution on described photoresist layer surface is 1～2 second.With respect to prior art, the rotating speed of vacuum cup in the time of spray developing liquid increases by 1～2 times, and the time that nozzle sets is sprayed at the developer solution on photoresist surface also increases by 1～2 times.Be equivalent to increase the amount of the developer solution that is sprayed at photoresist layer surface.The defect that has overcome the more dilute development liquid of residual solvent of thick photoresist layer inside, has improved development effect.
In the present embodiment, the time of the type of second nozzle group, second nozzle the group rotating speed when the second nozzle group spray developing liquid, second nozzle group spray developing liquid to the preset distance on photoresist surface, vacuum cup be closely connected, indivisible.Need these conditions of strict implement, could be in raising the efficiency, obtain best development effect.
Certainly, in other embodiment, adopt the photographic parameter of prior art, also can implement the present invention, just development effect is slightly poorer than last embodiment, but with respect to prior art, also solved of the prior art in the inner problem that produces blister defect of thick photoresist layer, but also can be in not affecting development effect, do not increase under the thick photoresist prerequisite of soft baking time, improve the efficiency of fabricating patterned photoresist layer.Belong to protection scope of the present invention.
After development finishes, just can form on substrate 20 surfaces the photoresist layer of patternings.
Last post bake cures graphical photoresist layer, further to vapor away remaining photoresist solvent, and the adhesiveness of the photoresist layer of raising patterning to crystal column surface.Finally graphical photoresist layer is checked, find out problematic graphical photoresist layer.
It should be noted that, the patterned photoresist layer forming according to the method for the present embodiment is for the Implantation restraining barrier of the larger Implantation situation of energy.In other embodiment, also can be for anti-etching restraining barrier.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (9)
1. a formation method for graphical photoresist, is characterized in that, comprising:
Semiconductor substrate is provided, in described Semiconductor substrate, forms photoresist layer, the thickness of described photoresist layer is more than or equal to 1 micron;
Described photoresist layer is carried out to soft baking and exposure successively;
Photoresist layer surface sprinkling wetting agent after described exposure, optimizes described spraying parameter, and the photoresist layer surface after described exposure forms wetting layer;
The photoresist layer that forms wetting layer is carried out to development treatment, form the photoresist layer of patterning.
2. formation method as claimed in claim 1, is characterized in that, described wetting agent is deionized water.
3. formation method as claimed in claim 2, is characterized in that, the method for the photoresist layer surface sprinkling wetting agent after described exposure comprises:
Described Semiconductor substrate is placed on vacuum cup, and described vacuum cup top is provided with the first nozzle sets, and described vacuum cup horizontally rotates with respect to described the first nozzle sets;
Described sprinkling wetting agent parameter is: the rotating speed that described vacuum cup sprays when deionized water in the first nozzle sets is 1000～2000 revs/min, described the first nozzle sets to the time of described photoresist layer surface sprinkling deionized water be 1～3 second.
4. formation method as claimed in claim 1, is characterized in that, the photoresist layer that forms wetting layer is carried out before development treatment, also comprises that the photoresist layer to forming wetting layer dries.
5. formation method as claimed in claim 4, is characterized in that, the method for described drying comprises:
The rotating speed of described vacuum cup in the time drying is set to 1200～1800 revs/min, and the time of described drying is 2～4 seconds.
6. formation method as claimed in claim 1, is characterized in that, the method for described development treatment comprises:
Described Semiconductor substrate is arranged on vacuum cup, described Semiconductor substrate is circular, described vacuum cup top preset distance is provided with second nozzle group, nozzle in described second nozzle group is arranged along described Semiconductor substrate diametric(al), described spread length is more than or equal to described semiconductor diameter, and described vacuum cup horizontally rotates with respect to described second nozzle group;
The rotating speed of described vacuum cup in the time of second nozzle group spray developing liquid is 30～60 revs/min, and the time that described second nozzle group is sprayed at the developer solution on described photoresist layer surface is 1～2 second.
7. formation method as claimed in claim 6, is characterized in that, described preset distance is for being more than or equal to 1 millimeter and be less than or equal to 3 millimeters.
8. formation method as claimed in claim 6, is characterized in that, the distance between the measure-alike and described nozzle of the each nozzle in described second nozzle group equates.
9. formation method as claimed in claim 1, is characterized in that, the time of described soft baking is more than or equal to 60s and is less than or equal to 90s.
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| CN201410081194.2A CN103823334A (en) | 2014-03-06 | 2014-03-06 | Formation method for graphical photoresist |
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| CN201410081194.2A CN103823334A (en) | 2014-03-06 | 2014-03-06 | Formation method for graphical photoresist |
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|---|---|---|---|---|
| US6159662A (en) * | 1999-05-17 | 2000-12-12 | Taiwan Semiconductor Manufacturing Company | Photoresist development method with reduced cycle time and improved performance |
| US20030017665A1 (en) * | 2001-07-23 | 2003-01-23 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
| US20040115567A1 (en) * | 2002-12-16 | 2004-06-17 | Mandal Robert P. | Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms |
| CN1908819A (en) * | 2005-08-03 | 2007-02-07 | 东京毅力科创株式会社 | Developing treatment apparatus and developing treatment method |
| CN102211095A (en) * | 2010-04-02 | 2011-10-12 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of wafer |
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2014
- 2014-03-06 CN CN201410081194.2A patent/CN103823334A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6159662A (en) * | 1999-05-17 | 2000-12-12 | Taiwan Semiconductor Manufacturing Company | Photoresist development method with reduced cycle time and improved performance |
| US20030017665A1 (en) * | 2001-07-23 | 2003-01-23 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
| US20040115567A1 (en) * | 2002-12-16 | 2004-06-17 | Mandal Robert P. | Wafer track apparatus and methods for dispensing fluids with rotatable dispense arms |
| CN1908819A (en) * | 2005-08-03 | 2007-02-07 | 东京毅力科创株式会社 | Developing treatment apparatus and developing treatment method |
| CN102211095A (en) * | 2010-04-02 | 2011-10-12 | 中芯国际集成电路制造(上海)有限公司 | Cleaning method of wafer |
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