CN103814488A - External cavity laser - Google Patents
External cavity laser Download PDFInfo
- Publication number
- CN103814488A CN103814488A CN201280017638.5A CN201280017638A CN103814488A CN 103814488 A CN103814488 A CN 103814488A CN 201280017638 A CN201280017638 A CN 201280017638A CN 103814488 A CN103814488 A CN 103814488A
- Authority
- CN
- China
- Prior art keywords
- wave length
- transmission spectrum
- selection element
- gas laser
- length selection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Abstract
An external cavity laser comprises a gain chip (11), a collimated lens (14), a wavelength tunable selection assembly (15), a focusing lens (16), and a reflector (17). The optical axis of the collimated lens (14) is coincident with the optical axis of the focusing lens (16). The wavelength tunable selection assembly (15) is located between the collimated lens (14) and the focusing lens (16), and the wavelength tunable selection assembly (15) and the gain chip (11) are respectively located on the two sides of the collimated lens (14). One cavity surface (13) of the gain chip (11) is on the focal plane of the collimated lens (14); and the reflector (17) is on the focal plane of the focusing lens (16) and is perpendicular to the optical axis of the focusing lens (16). The reflector (17) and the other cavity surface (12) of the gain chip (11) form a resonant cavity of the external cavity laser. The external cavity laser features low loss, low threshold current, favorable working performance, and excellent stability and reliability.
Description
A kind of outside cavity gas laser
Technical field
The present invention relates to optical communication field, more particularly to a kind of outside cavity gas laser.Background technology
With the development of optical communication system, early stage DWDM (Dense Wavelength Division Multiplexing, dense wave division multipurpose）Laser with fixed wavelength used in system is gradually replaced by Wavelength tunable laser.Therefore, the laser of tunable wave length turns into the focus studied recently.
Prior art provides a kind of laser of tunable wave length, its structure is as shown in figure 1, the Etalon (etalons constituted including chip gain 1, collimating mirror 4, fixed wave length selection element 5, focus lamp 6 with the speculum 7 parallel by two and speculum 8）.Many longitudinal mode light beams that chip gain 1 is produced are from its outgoing of Cavity surface 3, then the large spot collimated light beam obtained by the beam-expanding collimation of collimating mirror 4 is filtered by fixed wave length selection element 5, filtered outgoing beam is focused mirror 6 and focuses on the Etalon for inciding and being made up of speculum 7 and speculum 8, the Etalon reflects its incident light beam the active area for the chip gain 4 that turns back, and forms exocoel resonant optical path.The laser realizes that the tuning of wavelength deviates optical axis orthogonal direction by Etalon and triggers " off resonance " reflection to realize, i.e., by the size that changes Etalon angular separation α orthogonal with the optical axis so that laser exports the laser of different wave length（Cavity surface 2 outgoing of the laser of formation from chip gain）.Wherein, what the dotted line of horizontal direction represented in Fig. 1 is exactly optical axis.
But, " off resonance " reflection is produced when deviateing optical axis orthogonal direction by Etalon due to wavelength tuning of the prior art to realize, this " off resonance " reflection necessarily causes high reflection loss, and the angle of the orthogonal direction of Etalon and optical axis is bigger, reflection loss is bigger, therefore, the laser of above-mentioned tunable wave length of the prior art has the blunt high losses of ^.In addition, " off resonance " reflection effect can be produced due to not being Etalon directions orthogonal with the optical axis into any angle, be desirable to carefully tune the angle in Etalon directions orthogonal with the optical axis could cause laser export specific wavelength laser, cause wavelength tuning difficulty increase and be tuned to output specific wavelength needed for time it is very long.The content of the invention
In view of the shortcoming that laser is present in the prior art, technical solution of the present invention provides a kind of with low-loss, the fireballing outside cavity gas laser of wavelength tuning.
An aspect of of the present present invention provides a kind of outside cavity gas laser, including：Chip gain, collimating mirror, tunable wave length selection component, condenser lens and speculum；
The chip gain selects both sides of the component respectively positioned at the collimating mirror with the tunable wave length, and a Cavity surface of the chip gain is located on the focal plane of the collimating mirror；
The chip gain, for producing many longitudinal mode light beams, wherein, many longitudinal mode light beams are from the Cavity surface outgoing；
The collimating mirror, is expanded and is collimated for many longitudinal mode light beams to the Cavity surface outgoing from the chip gain, obtain collimated light beam；
The tunable wave length selects component, with adjustable transmission spectrum, for being filtered to the collimated light beam；Wherein, different transmission spectrums corresponds to the laser that the outside cavity gas laser exports different wave length；The speculum, it is vertical on the focal plane of the condenser lens, and with the optical axis of condenser lens, for being reflected towards the condenser lens to the light beam for inciding its reflecting surface.
In the outside cavity gas laser that technical solution of the present invention is provided, because speculum is perpendicular to the optical axis of condenser lens, and the minute surface of speculum is located at the focal plane of condenser lens, so the light for the reflecting surface that can will incide speculum is substantially all to be reflected towards condenser lens, so that the loss of outside cavity gas laser is very low.Another sunset is foretold, the outside cavity gas laser that technical solution of the present invention is provided is when realizing wavelength tuning, it is the realization so that the transmission language of tunable wave length selection component changes by the tunable selection component of adjusting wavelength, and the transmission language of the tunable selection component of adjusting wavelength is very simple and quick, therefore, the wavelength tuning speed for the outside cavity gas laser that technical solution of the present invention is provided is fast, and tuning control is simple.Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, the required accompanying drawing used in embodiment or description of the prior art will be briefly described below, apparently, drawings in the following description are only some embodiments of the present invention, for those of ordinary skill in the art, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the laser of tunable wave length in the prior art；
Fig. 2 is a kind of structural representation of outside cavity gas laser provided in an embodiment of the present invention；
Fig. 3 is another structural representation of outside cavity gas laser provided in an embodiment of the present invention；
Fig. 4 A are the transmission spectrum schematic diagram of longitudinal mode mode spectrum and Etalon 151 in embodiment one；
Fig. 4 B are that the light of many longitudinal modes of chip gain generation in embodiment one passes through the filtered transmitted spectrum schematic diagrames of Etalon 151；
The light for many longitudinal modes that the transmission spectrum and chip gain that Fig. 4 C are Etalon 152 in embodiment one are produced passes through the filtered transmitted spectrum schematic diagrames of Etalon 151；
Fig. 4 D are transmission spectrum and the longitudinal mode mould language schematic diagram of the Etalon 151 after parameter is adjusted in embodiment one；
Etalon 151 filtered transmitted spectrum schematic diagram of the light for many longitudinal modes that transmission spectrum and the chip gain that Fig. 4 E are the Etalon 152 after parameter is adjusted in embodiment one are produced after parameter is adjusted；Transmission spectrum and the schematic diagram of longitudinal mode mould language that Fig. 5 A are adjustable type Etalon in embodiment three；
Fig. 5 B be embodiment three in parameter be adjusted after adjustable type Etalon transmission spectrum and the schematic diagram of longitudinal mode mould language.Embodiment
Understand for the ease of persons skilled in the art and realize the present invention, embodiments of the invention are described in conjunction with accompanying drawing.Here, the schematic description and description of the present invention is used to explain the present invention, but it is not as a limitation of the invention.
With reference to the accompanying drawings and examples, technical scheme is described.
The embodiment of the present invention a kind of outside cavity gas laser, its structure are provided as shown in Fig. 2 including：Chip gain 11, collimating mirror 14, tunable wave length selection component 15, condenser lens 16, and speculum 17.
The optical axis coincidence of collimating mirror 14 and condenser lens 16, tunable wave length selection component 15 is located between collimating mirror 14 and condenser lens 15, and tunable wave length selection component 15 is located at the both sides of collimating mirror 14 with chip gain 11 respectively, tunable wave length selects component 15 with speculum 17 respectively positioned at the both sides of condenser lens 17, the Cavity surface 13 of chip gain is located on the focal plane of collimation lens 14, speculum 17 is located on the focal plane of condenser lens 16, and perpendicular to the optical axis 20 of condenser lens 16.The Cavity surface 12 of speculum 17 and chip gain 11 forms the resonator of the outside cavity gas laser of the embodiment of the present invention.
In embodiments of the present invention, tunable wave length selection component 15 has adjustable transmission spectrum.Its transmission spectrum is changed by the tunable selection component 15 of adjusting wavelength, so that the outside cavity gas laser in the embodiment of the present invention exports the laser of different wave length.
Chip gain 11 produces the light beam of many longitudinal modes, and the light beam of many longitudinal modes is from the outgoing directive collimating mirror 14 of Cavity surface 13, and 14 pairs of light beams from the outgoing of Cavity surface 14 of collimating mirror are expanded and collimation obtains collimated light beam.The wavelength can
Tuning selection 15 pairs of collimated light beams of component are filtered.The transmission spectrum of tunable wave length selection component 15 determines that wavelength can substantially be transmitted from tunable wave length selection component 15 completely with transmiting the light that peak position is overlapped in transmission spectrum, and the misaligned light in peak position is transmitted in wavelength and transmission spectrum when selecting component 15 through tunable wave length all by different degrees of decay.Lens 16 being focused after the filtering that tunable wave length selects component 15 from the collimated light beam of the outgoing of collimating mirror 14 and converging at speculum 17, the light beam is reflected towards condenser lens 16 by speculum 17 again.The light beam that speculum 17 reflects is sequentially passed through after condenser lens 16, tunable wave length selection component 15, collimating mirror 15 from the Cavity surface 13 of chip gain 11 incides chip gain, wherein, in light beam from during speculum 17 returns to chip gain 11, tunable wave length selection 15 pairs of light beams incident from the direction of condenser lens 16 of component are filtered again so that the wavelength light misaligned with transmission peak position in the transmission spectrum of tunable selection component 15 is attenuated again.From foregoing description it can be seen that, in embodiments of the present invention, light beam shone from the Cavity surface 13 of chip gain 11 Cavity surface 13 that again returns to chip gain 11 this during, the light that light beam medium wavelength selects the position of transmission peaks in the transmission spectrum of component 15 misaligned with tunable wave length is decayed twice.And in the resonator being made up of the Cavity surface 12 and speculum 17 of chip gain, light beam can undergo reflection repeatedly back and forth between the Cavity surface 12 and speculum 17 of chip gain 11, the misaligned light in transmission peak position in the transmission spectrum of component 15 is selected often to select component 15 by a tunable wave length for wavelength and tunable wave length, just once decayed, after repeatedly decay, substantially only have wavelength to select the light that transmission peak position is overlapped in the transmission spectrum of component 15 with tunable wave length in resonator, after the energy of the light that transmission peak position is overlapped in the transmission spectrum that resonator medium wavelength selects component 15 with tunable wave length reaches threshold condition, from the outgoing of Cavity surface 12 of chip gain 11.When the outside cavity gas laser of the embodiment of the present invention realizes wavelength tuning, make its transmission language change to realize by the tunable selection component 15 of adjusting wavelength, specifically the tunable selection component 15 of adjusting wavelength causes longitudinal modes different in the multilongitudianl-mode laser that the transmission peaks position alignment chip gain 11 of its transmission spectrum is produced.It is preferred that, in the wavelength tuning range of the outside cavity gas laser of the embodiment of the present invention, only one of which transmission peaks in the transmission spectrum of tunable wave length selection component 15.
In outside cavity gas laser provided in an embodiment of the present invention, speculum is located at the focal plane of condenser lens, and it is vertical with the optical axis of condenser lens, the light for the reflecting surface that speculum substantially can will incide speculum is substantially all to be reflected towards focus lamp so that the loss of outside cavity gas laser is very low.Again because the threshold current of outside cavity gas laser is that loss to outside cavity gas laser is related, the loss of outside cavity gas laser is bigger, the threshold current of outside cavity gas laser is bigger, and the service behaviour, stability and reliability that cause outside cavity gas laser are all deteriorated by big threshold current, therefore, outside cavity gas laser provided in an embodiment of the present invention has good service behaviour, excellent stability and reliability because its loss is very low.In addition, outside cavity gas laser provided in an embodiment of the present invention exists
When realizing wavelength tuning, it is to make it transmit language by the tunable selection component of adjusting wavelength to change realization, and the transmission language of the tunable selection component of adjusting wavelength is very simple and quick, therefore the wavelength tuning speed of the outside cavity gas laser of outside cavity gas laser offer provided in an embodiment of the present invention is fast, tuning control is simple.
In one embodiment, tunable wave length selection component 15 is specifically an adjustable type Etalon with high-fineness.In the wavelength tuning range of outside cavity gas laser, only one of which transmission peaks in adjustable type Etalon transmission spectrum.It is preferred that, select suitable adjustable type Etalon so that with transmiting the longitudinal mode that peak position is overlapped in adjustable type Etalon transmission spectrum in many longitudinal modes after by adjustable type Etalon（Referred to as main mould）Gain inequality between the longitudinal mode nearest with the main mould is at least 3dB.
In another embodiment, as shown in figure 3, tunable wave length selection component 15 is specifically to be made up of first wave length selection element 151 and second wave length selection element 152.151 pairs of collimated light beams from the outgoing of collimating mirror 14 of first wave length selection element are filtered, and second wave length selection element 152 is located at after second wave length selection element 152, to being filtered from the light beam of the outgoing of first wave length selection element 151.It is understood that the light that speculum 17 reflects is after condenser lens 16, is first filtered and then filtered again by first wave length selection element 151 by second wave length selection element 152.Wherein, there is the transmission peak position of a coincidence between the transmission spectrum of first wave length selection element 151 and the transmission spectrum of second wave length selection element 152, and the transmission peak position is adjustable.In the present embodiment, by adjusting at least one in first wave length selection element 151 and second wave length selection element 152 so that the transmission peak position of the coincidence changes so that the outside cavity gas laser exports the laser of different wave length.
In another embodiment, the transmission spectrum of first wave length selection element 151 is uncontrollable transmission spectrum, and the transmission spectrum of second wave length selection element 152 is the transmission spectrum that can be adjusted.In the present embodiment, the wavelength tuning function of outside cavity gas laser is realized by adjusting the transmission spectrum of second wave length selection element 152, specifically, regulation second wave length selection element 152 causes the transmission peak position in the transmission spectrum of second wave length selection element 152 to change, so that the transmission peak position overlapped between the transmission spectrum of second wave length selection element 152 and the transmission language of first wave length selection element 151 changes.In the present embodiment, because the transmission language of first wave length selection element cannot be adjusted, therefore, the laser which single wavelength the outside cavity gas laser of the present embodiment can export is determined by the transmission spectrum of first wave length selection element 151, and each transmission peak position correspondence outside cavity gas laser exports a kind of laser of single wavelength in the transmission spectrum of first wave length selection element 151.Under some scenes, outside cavity gas laser need to be only tuned between some specific wavelengths, therefore, as long as the first wave length selection element 151 that the transmission peak position of selective transmission spectrum is overlapped with above-mentioned specific wavelength, it is possible to meet and require.In another embodiment, the transmission language of first wave length selection element 151 is to adjust
Section, and the transmission spectrum of second wave length selection element 152 cannot be adjusted.
In another embodiment, the transmission spectrum of first wave length selection element 151 and the transmission spectrum of second wave length selection element 152 are all the transmission spectrums that can be adjusted.In the present embodiment, the wavelength tuning function of outside cavity gas laser is transmission spectrum by adjusting first wave length selection element 151 and the transmission spectrum of second wave length selection element 152 so that have a transmission peak position overlapped to realize between the transmission spectrum of the first wave length selection element 151 and the transmission spectrum of second wave length selection element 152.In the present embodiment, because the transmission spectrum of first wave length selection element 151 and the transmission spectrum of second wave length selection element 152 can all be adjusted, in the wavelength tuning range of outside cavity gas laser, outside cavity gas laser can export the laser of any single wavelength.
In the particular embodiment, previously mentioned first wave length selection element 151 and second wave length selection element 152 are specifically as follows Etalon.Especially, when requiring that the transmission language of any one in first wave length selection element 151 and second wave length selection element 152 is adjustable, then the wavelength selective elements are specifically as follows adjustable type Etalon.It can be applied at least following species of adjustable type Etalon of the embodiment of the present invention：Hot tune type Etalon, liquid crystal tunable type Etalon, and spacing adjustable type Etalon.
Anti-reflective coating is coated with order to further reduce the speculum in loss, outside cavity gas laser provided in an embodiment of the present invention.
In order to further increase the flexibility of outside cavity gas laser wavelength tuning, chip gain 11 in outside cavity gas laser provided in an embodiment of the present invention includes phase-shifted region, chip gain 11 is introduced after phase-shifted region, and the blunt change according to Injection Current of the ability of chip gain 11 can be allowd to adjust the distribution of longitudinal mode.
The wavelength tuning process of the outside cavity gas laser of embodiment, is described by taking three specific implementations that tunable wave length selects component 15 as an example below for a better understanding of the present invention.
Embodiment one
As shown in Figure 3, tunable wave length selection component 15 is specifically to be made up of two wavelength selective elements 151 and 152, and wavelength selective elements 151 and 152 are specially adjustable type Etalon, for convenience of description, wavelength selective elements 151 are directly referred to as adjustable type Etalon 151 in the present embodiment, wavelength selective elements 152 are directly referred to as adjustable type Etalon 152.
In the present embodiment, the chamber of outside cavity gas laser is long（From the Cavity surface 12 of chip gain 11 to the distance of speculum 17）L=2cm, the Wavelength distribution of the light for many longitudinal modes that chip gain 11 is produced is in C-band (1530nm ~ 1565nm), longitudinal mode mode spacing Am。de= 0.06nm.Adjustable type Etalon 151 reflectivity R=0.9, gap length is 2.9995mm, and gap refractive index is 1.Etalon 152 reflectivity is 0.9, and gap length is 22.4851 μ ι η, and gap refractive index is 1.4581.
As shown in Figure 4 A, what the dotted line in figure was represented is a kind of each longitudinal mode (wavelength of each longitudinal mode correspondence）, what the solid line in figure was represented is adjustable type Etalon 151 transmission spectrum.From Fig. 4 A as can be seen that wavelength 1549.72nm longitudinal mode (as in Fig. 4 A at 1549.5nm after the 4th dotted line shown in) with a transmission peak position in adjustable type Etalon 151 transmission spectrum（Transmission peaks are located at 1549.72nm）Overlap, wavelength is 1550.92nm longitudinal mode（As shown in the 2nd dotted line at the 1551nm in Fig. 4 A above）With another transmission peak position in adjustable type Etalon 151 transmission spectrum（Transmission peaks are located at 1550.92nm）Overlap.Adjustable type Etalon 151 light of each longitudinal mode is incided after adjustable type Etalon 151, only wavelength with transmitted in adjustable type Etalon 151 transmission spectrum the light of longitudinal mode that peak position is overlapped can just have no loss by adjustable type Etalon 151, and wavelength is with transmiting the light of the misaligned longitudinal mode in peak position when by adjustable type Etalon 151 by different degrees of decay in Etalon 151 transmission spectrum.Fig. 4 B are passing through the filtered transmitted light languages of adjustable type Etalon 151 for the light of many longitudinal modes of the outgoing of chip gain 11, it is clear that from the figure, the light for the longitudinal mode that the light and wavelength for the longitudinal mode that wavelength is 1549.72nm are 1550.92nm there is no change in the power after by adjustable type Etalon 151 compared to the power before inciding adjustable type Etalon, and the light of other longitudinal modes power after by adjustable type Etalon 151 is all decayed by high degree.
152 pairs of light from the transmissions of adjustable type Etalon 151 of adjustable type Etalon is further to be filtered.As shown in Fig. 4 C, what what the dotted line in figure was represented be that solid line in adjustable type Etalon 152 transmission spectrum, figure represents is that the light of many longitudinal modes of the outgoing of chip gain 11 is passing through the filtered transmitted spectrums of adjustable type Etalon 151.It is clear that 1549.72nm longitudinal mode and a transmission peak position in adjustable type Etalon 152 transmission spectrum from Fig. 4 C（Transmission peaks are located at 1549.72nm）Overlap, therefore, in the light transmitted from adjustable type Etalon 151 only wavelength for the luminous energy of 1579.72nm longitudinal mode substantially have no loss by adjustable type Etalon 152, and the light of other longitudinal modes is all decayed when by adjustable type Etalon 152 by high degree.The light of many longitudinal modes of the outgoing of chip gain 11 is after adjustable type Etalon 151 and adjustable type Etalon 152 is passed in succession through, substantially with regard to the light of only one of which longitudinal mode, the light of other longitudinal modes because it is attenuated be substantially all in the absence of, therefore, from the outgoing of Cavity surface 12 of chip gain 11 by be single longitudinal mode laser.The process that the light for obtaining a longitudinal mode is filtered out in the light of the common many longitudinal modes produced from chip gain 11 of above-mentioned adjustable type Etalon 151 and adjustable type Etalon 152 is exactly the modeling process of outside cavity gas laser.
People from position of Etalon transmission peaks01By formula（1) determine：
_ nd cos θ
Am 111Wherein, n is Etalon gap refractive index to the ^ of=m 1, and d is Etalon clearance distance, and Θ is to incide Etalon
Light beam and Etalon between angle, m is positive integer.For adjustable type Etalon, n, d, it is adjustable with θ, and for non-adjustable type Etalon, n, d and Θ are changeless, therefore, adjustable type Etalon transmission peak position can change, and the transmission peak position without adjustable type Etalon cannot change.
In the present embodiment, when the laser for needing outside cavity gas laser to export another wavelength（For example, output wavelength is 1549.78nm laser）When, at least one parameter in adjustable type Etalon 151 and adjustable type Etalon 152 n, d and Θ can be adjusted, so that adjustable type Etalon 151 and adjustable type Etalon 152 transmission language all changes, moreover, the transmission spectrum after adjustable type Etalon 151 change and the transmission spectrum after adjustable type Etalon 152 change are only the transmission peaks for just having coincidence at 1549.78nm in wavelength.For example, by increasing adjustable type Etalon 151 clearance distance d and adjusting adjustable type Etalon 152 gap refractive index n, adjustable type Etalon 151 transmission spectrum and adjustable type Etalon 152 transmission language can be caused just there are the transmission peaks of coincidence only at 1549.78nm.As shown in Figure 4 D, what the dotted line in figure was represented is each longitudinal mode, what the solid line in figure was represented is the transmission spectrum of the adjustable type Etalon 151 after d increases, it can be seen that only wavelength is 1549.78nm (as shown in the 5th dotted line in Fig. 4 D at 1549.5nm below）With 1550.98nm (as 155 lnm go out shown in first dotted line above in Fig. 4 D）Longitudinal mode overlapped with two in Etalon 151 transmission spectrum transmission peak positions.As shown in Figure 4 E, in figure represented by solid line be the outgoing of chip gain 11 many longitudinal modes adjustable type Etalon 151 filtered transmitted spectrum of the light after d increases, what the dotted line in figure was represented is adjustable type Etalons 152 of the n after fine setting transmission spectrum, it can be seen that wavelength is 1549.78nm longitudinal mode and a transmission peak position in Etalon 152 transmission spectrum（Transmission peaks are located at 1549.78nm）Overlap.It can be learnt from Fig. 4 D and 4E, the light of many longitudinal modes of the outgoing of chip gain 11 is after adjustable type Etalon 151 and adjustable type Etalon 152 is passed in succession through, substantially with regard to light of the only one of which wavelength for 1579.78nm longitudinal mode, the light of other longitudinal modes because it is attenuated be substantially all in the absence of, therefore, will be laser that wavelength is 1579.78nm from the outgoing of Cavity surface 12 of chip gain 11.
In the present embodiment, because wavelength selective elements 151 and 152 are adjustable type Etalon, therefore, the outside cavity gas laser of the present embodiment can export the laser of any single longitudinal mode.Embodiment two
In the present embodiment, tunable wave length selection component 15 is specifically to be made up of two wavelength selective elements 151 and 152, and wavelength selective elements 151 and 152 are specially Etalon, and one of Etalon is adjustable type Etalon, and another is non-adjustable type Etalon.
In the present embodiment, because only one of which is adjustable type Etalon in wavelength selective elements 151 and 152, so the outside cavity gas laser in the present embodiment is from a kind of laser of wavelength is exported to the laser for exporting another wavelength, it is to be realized by adjusting adjustable type Etalon, it adjusts adjustable type Etalon method referring to the associated description in embodiment one, and no longer Redundant is stated herein.
In the present embodiment, it is non-adjustable type Etalon due to there is one in wavelength selective elements 151 and 152, so the laser which wavelength the outside cavity gas laser in the present embodiment can export depends on the non-adjustable type Etalon.Non-adjustable type Etalon transmission spectrum cannot change, in the light for many longitudinal modes that the chip gain 11 of outside cavity gas laser is produced, the light of the longitudinal mode only overlapped with the transmission peak position in the transmission spectrum of the non-adjustable type Etalon is possible to ultimately form Cavity surface 12 outgoing of the laser from chip gain 11.Embodiment three
In the present embodiment, tunable wave length selection component 15 is specifically an adjustable type Etalon.In order that the outside cavity gas laser for obtaining the present embodiment realizes the laser of the single longitudinal mode of output, therefore, the adjustable type Etalon in the present embodiment needs to be the adjustable type Etalon with high-fineness.Specifically, in the wavelength tuning range of outside cavity gas laser, only one of which transmission peaks in the adjustable type Etalon transmission spectrums of selection.Preferably, the adjustable type Etalon of selection causes with transmiting the longitudinal mode that peak position is overlapped in transmission spectrum（Convenient for subsequent descriptions, this longitudinal mode is referred to as main mould) and closest to the longitudinal mode of the main mould in the gain inequality after adjustable type Etalon it is more than or equal to 3dB.
In the present embodiment, the chamber of outside cavity gas laser is long（From the Cavity surface 12 of chip gain 11 to the distance of speculum 16）L=2cm, the Wavelength distribution of the light for many longitudinal modes that chip gain 11 is produced is in C-band (1530nm ~ 1565nm), longitudinal mode mode spacing Amode = 0.06nm。
As shown in Figure 5A, what the solid line in figure was represented is each longitudinal mode that the chip gain 11 that the dotted line in the transmission spectrum of the adjustable type Etalon in the present embodiment, figure is represented is produced.From Fig. 5 A as can be seen that adjustable type Etalon transmission peaks be located at wavelength be 1549.72nm (as shown in the 4th dotted line below at 1549.5nm in Fig. 5 A）Place, wavelength just overlaps for 1549.72nm longitudinal mode with the transmission peak position.In the light for each longitudinal mode for inciding the adjustable type Etalon of the present embodiment, only wavelength can just have no the adjustable type Etalon by the present embodiment of loss for the light of 1549.72nm longitudinal mode, and the light of other longitudinal modes is all decayed in the Etalon by the present embodiment by high degree, therefore, from the outgoing of Cavity surface 12 of chip gain 11 will be finally laser that wavelength is 1549.72nm.
When laser needs the laser that output wavelength is 1551.28nm, adjustable type in this implementation is adjusted
At least one parameter in Etalon n, d and Θ so that the position of adjustable type Etalon transmission peaks is moved on at 1551.28nm in the present embodiment, so as to be overlapped with wavelength for 1551.28nm longitudinal mode.As shown in Figure 5 B, the parameter that solid line is represented in figure be adjusted after adjustable type Etalon transmission spectrum, what dotted line was represented is chip gain 11 produce each longitudinal mode.It can be seen that from Fig. 5 B, after the parameter of adjustable type Etalon in the present embodiment is adjusted, the position of the adjustable type Etalon of the present embodiment transmission peaks has been moved to 1551.28nm (as shown in above the 4th dotted line at 1551.5nm in Fig. 5 B）Place, therefore, after the parameter for the adjustable type Etalon for adjusting the present embodiment, outside cavity gas laser just can be using output wavelength as 1551.28nm laser.
It is described above; the only present invention preferably embodiment, but protection scope of the present invention is not limited thereto, any one skilled in the art the invention discloses technical scope in; the change or replacement that can be readily occurred in, should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be defined by the protection domain of claims.
Claims (1)
- Claim1st, a kind of outside cavity gas laser, it is characterised in that including：Chip gain, collimating mirror, tunable wave length selection component, condenser lens and speculum；The chip gain selects both sides of the component respectively positioned at the collimating mirror with the tunable wave length, and a Cavity surface of the chip gain is located on the focal plane of the collimating mirror；The chip gain, for producing many longitudinal mode light beams, wherein, many longitudinal mode light beams are from the Cavity surface outgoing；The collimating mirror, is expanded and is collimated for many longitudinal mode light beams to the Cavity surface outgoing from the chip gain, obtain collimated light beam；The tunable wave length selects component, with adjustable transmission spectrum, for being filtered to the collimated light beam；Wherein, different transmission spectrums corresponds to the laser that the outside cavity gas laser exports different wave length；The speculum, it is vertical on the focal plane of the condenser lens, and with the optical axis of condenser lens, for being reflected towards the condenser lens to the light beam for inciding its reflecting surface.2nd, outside cavity gas laser as claimed in claim 1, it is characterised in that in the wavelength tuning range of the outside cavity gas laser, the tunable wave length selects adjustable transmission spectrum only one of which transmission peaks of component.3rd, outside cavity gas laser as claimed in claim 2, characterized in that, gain inequality of the light after component is selected by the tunable wave length of the light of many longitudinal mode light beam medium wavelengths and longitudinal mode that the position of the transmission peaks is overlapped and the longitudinal mode closest to the position of the transmission peaks is more than or equal to 3dB.4th, the outside cavity gas laser as described in any one of Claim 1-3, it is characterised in that the tunable wave length selection component includes：First wave length selection element, for being filtered to the collimated light beam；Second wave length selection element, the light beam exported positioned at the first wave length selection element is filtered；Wherein, there is the transmission overlapped a peak position between the transmission spectrum of second wave length selection element and the transmission spectrum of the first wave length selection element, and the transmission peak position is adjustable.5th, outside cavity gas laser as claimed in claim 4, it is characterised in that the transmission spectrum of the first wave length selection element is specifically adjustable transmission spectrum, the transmission spectrum of the second wave length selection element is specifically adjustable transmission spectrum.6th, outside cavity gas laser as claimed in claim 5, it is characterised in that the transmission spectrum of the first wave length selection element is specifically uncontrollable transmission spectrum, and the transmission spectrum of second wave length selection element is specifically adjustable Transmission spectrum；Or,The transmission spectrum of the first wave length selection element is specifically adjustable transmission spectrum, and the transmission spectrum of the second wave length selection element is specifically uncontrollable transmission spectrum.7th, the outside cavity gas laser as described in any one of claim 4 to 6, it is characterised in that the first wave length selection element and second selection element are specifically etalon.8th, outside cavity gas laser as claimed in claim 7, it is characterized in that, when the transmission spectrum of any one wavelength selective elements in the first wave length selection element and the second wave length selection element is adjustable, then the wavelength selective elements are specially adjustable type etalon.9th, the outside cavity gas laser as described in right wants 8, it is characterised in that the adjustable type etalon is specially one kind in hot tune type etalon, liquid crystal tunable type etalon and spacing adjustable type etalon.10th, the outside cavity gas laser as described in any one of claim 1 to 9, it is characterised in that the speculum is coated with Anti-reflective coating.11st, the outside cavity gas laser as described in any one of claim 1 to 10, it is characterised in that the chip gain includes phase-shifted region, the distribution of longitudinal mode is adjusted according to the change of Injection Current.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2012/078002 WO2014000311A1 (en) | 2012-06-30 | 2012-06-30 | External cavity laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103814488A true CN103814488A (en) | 2014-05-21 |
| CN103814488B CN103814488B (en) | 2016-09-28 |
Family
ID=49782134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280017638.5A Active CN103814488B (en) | 2012-06-30 | 2012-06-30 | A kind of outside cavity gas laser |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103814488B (en) |
| WO (1) | WO2014000311A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015018352A1 (en) * | 2013-08-07 | 2015-02-12 | Innolight Technology Corporation | Wavelength-tunable external cavity laser |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN215377956U (en) * | 2021-06-21 | 2021-12-31 | 苏州旭创科技有限公司 | External cavity laser |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357951A (en) * | 2000-11-02 | 2002-07-10 | 古河电气工业株式会社 | Semiconductor laser module, laser unit and Raman amplifier |
| US20030021303A1 (en) * | 2001-07-06 | 2003-01-30 | Andrew Daiber | External cavity laser with continuous tuning of grid generator |
| CN1472852A (en) * | 2003-07-11 | 2004-02-04 | 清华大学 | Composite external chamber stepping toning semiconductor laser and its toning method |
| CN1509507A (en) * | 2001-03-16 | 2004-06-30 | 英特尔公司 | Adjustable extemal cavity laser |
| CN101557076A (en) * | 2009-05-22 | 2009-10-14 | 中国科学院国家授时中心 | Shakeproof external cavity semiconductor laser |
| WO2010070272A1 (en) * | 2008-12-18 | 2010-06-24 | Renishaw Plc | Frequency tuneable laser device |
-
2012
- 2012-06-30 WO PCT/CN2012/078002 patent/WO2014000311A1/en active Application Filing
- 2012-06-30 CN CN201280017638.5A patent/CN103814488B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1357951A (en) * | 2000-11-02 | 2002-07-10 | 古河电气工业株式会社 | Semiconductor laser module, laser unit and Raman amplifier |
| CN1509507A (en) * | 2001-03-16 | 2004-06-30 | 英特尔公司 | Adjustable extemal cavity laser |
| US20030021303A1 (en) * | 2001-07-06 | 2003-01-30 | Andrew Daiber | External cavity laser with continuous tuning of grid generator |
| CN1472852A (en) * | 2003-07-11 | 2004-02-04 | 清华大学 | Composite external chamber stepping toning semiconductor laser and its toning method |
| WO2010070272A1 (en) * | 2008-12-18 | 2010-06-24 | Renishaw Plc | Frequency tuneable laser device |
| CN101557076A (en) * | 2009-05-22 | 2009-10-14 | 中国科学院国家授时中心 | Shakeproof external cavity semiconductor laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015018352A1 (en) * | 2013-08-07 | 2015-02-12 | Innolight Technology Corporation | Wavelength-tunable external cavity laser |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014000311A1 (en) | 2014-01-03 |
| CN103814488B (en) | 2016-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6519269B1 (en) | Wavelength tuneable laser source | |
| CN100437323C (en) | Double cladding large mode field area Yb-doped photon crystal optical fiber femtosecond laser | |
| CN201984180U (en) | Fiber Fabry-Perot tunable filter | |
| US6967976B2 (en) | Laser with reflective etalon tuning element | |
| CN101859975B (en) | Dual-wavelength tunable thulium-doped fiber laser | |
| CN108089267B (en) | A kind of optical-fiber type broadband light vortex converter | |
| US20040004979A1 (en) | Resonating cavity system for broadly tunable multi-wavelength semiconductor lasers | |
| CN101483317A (en) | Pump mode for semiconductor laser | |
| CN108521068B (en) | The adjusting device of laser device of adjustable wavelength, pulse width and power | |
| CN115084978A (en) | Multi-pass laser spectrum broadening optical system and method | |
| CN103814488A (en) | External cavity laser | |
| CN105144509A (en) | Laser | |
| CN102495466A (en) | Multichannel optical quick tunable filter | |
| CN103762489A (en) | Wave length continuous tunable laser device | |
| CN117039604A (en) | Double interference filter special angle composite feedback quantity adjustable semiconductor laser | |
| US6959023B1 (en) | Laser with reflective etalon tuning element | |
| CN207282902U (en) | A kind of Wavelength-tunable external cavity laser | |
| CN102044836A (en) | Microchip laser capable of tuning output pulse width | |
| CN115986543A (en) | Narrow linewidth laser | |
| CN105071211A (en) | Dual-wavelength tunable laser apparatus based on external cavity structure | |
| CN212991569U (en) | Dual-wavelength resonant cavity based on volume Bragg grating | |
| CN208571218U (en) | A kind of acousto-optic Q-switching for optical fiber laser | |
| CN115966995A (en) | Narrow linewidth external cavity laser device based on semi-confocal cavity | |
| US20060056465A1 (en) | Laser with reflective etalon tuning element | |
| CN202817480U (en) | Laser with tunable wavelength |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |