CN103811606A - 发光二极管及发光二极管制造方法 - Google Patents

发光二极管及发光二极管制造方法 Download PDF

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CN103811606A
CN103811606A CN201210453099.1A CN201210453099A CN103811606A CN 103811606 A CN103811606 A CN 103811606A CN 201210453099 A CN201210453099 A CN 201210453099A CN 103811606 A CN103811606 A CN 103811606A
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gan layer
sapphire substrate
carbon nano
light
emitting diode
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林雅雯
邱镜学
凃博闵
黄世晟
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Yun Chuan Intellectual Property Services Co Ltd Of Zhongshan City
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Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
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Priority to TW101142998A priority patent/TW201424031A/zh
Priority to US14/014,381 priority patent/US20140131656A1/en
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Abstract

一种发光二极管，包括蓝宝石基板以及覆盖在蓝宝石基板表面的碳纳米管。碳纳米管之间形成有间隙以暴露出蓝宝石基板的部分表面。在暴露的蓝宝石基板的表面形成有未掺杂的GaN层，且未掺杂的GaN层覆盖所述碳纳米管。未掺杂的GaN层的表面依次形成有N型GaN层、活性层以及P型GaN层。在蓝宝石基板上覆盖的碳纳米管可使到未掺杂的GaN层形成侧向生长，从而降低其晶体缺陷。本发明还提供了一种由上述方法所制造的发光二极管的制造方法。

Description

发光二极管及发光二极管制造方法
技术领域
本发明涉及一种发光二极管，尤其涉及一种晶体品质较好的发光二极管及相应的发光二极管的制造方法。
背景技术
发光二极管(Light Emitting Diode，LED)是一种可将电流转换成特定波长范围的光电半导体元件。发光二极管以其亮度高、工作电压低、功耗小、易与集成电路匹配、驱动简单、寿命长等优点，从而可作为光源而广泛应用于照明领域。
在发光二极管的生长过程中，如何降低发光二极管的晶体缺陷是人们需要解决的问题。一种降低发光二极管的晶体缺陷的方法是采用图案化的蓝宝石基板，通过干蚀刻或者湿蚀刻在蓝宝石基板的表面形成各种图案，以降低后续生长的半导体层的晶体缺陷。然而，由于蓝宝石基板质地比较坚硬，在蓝宝石石基板上制备图案通常具有一定的难度，所形成的图案的均匀性和一致性也通常较差。
发明内容
有鉴于此，有必要提供一种晶体品质较好的发光二极管及相应的发光二极管的制造方法。
一种发光二极管，包括：
蓝宝石基板；
覆盖在蓝宝石基板表面的碳纳米管，碳纳米管之间形成有间隙以暴露出蓝宝石基板的部分表面；
未掺杂的GaN层，形成在暴露的蓝宝石基板的表面且覆盖所述碳纳米管；
N型GaN层，形成在未掺杂的GaN层表面；
活性层，形成在N型GaN层表面；以及
P型GaN层，形成在活性层表面。
一种发光二极管的制造方法，包括以下步骤：
提供一个蓝宝石基板；
在蓝宝石基板的表面覆盖多个碳纳米管，碳纳米管之间形成有间隙以暴露出蓝宝石基板的部分表面；
在蓝宝石基板的未被碳纳米管覆盖的区域生长未掺杂的GaN层，且所述GaN层覆盖所述碳纳米管；
在未掺杂的GaN层表面生长N型GaN层；
在N型GaN层表面生长活性层；以及
在活性层表面生长P型GaN层。
在上述发光二极管及发光二极管的制造方法中，通过在蓝宝石基板上覆盖一层碳纳米管，在后续未掺杂的GaN层的生长过程中，所述未掺杂的GaN层将在未被碳纳米管覆盖的区域上开始生长，然后侧向生长至完全覆盖碳纳米管。所述侧向生长的过程可以有效降低半导体生长过程中的缺陷，从而提高发光二极管的晶体品质。
附图说明
图1是本发明第一实施例所提供的发光二极管的结构示意图。
图2至图5是图1中的发光二极管的x射线衍射ω扫描所得出的半高宽度数据。
图6是图1中的发光二极管的电流-光强特性图。
主要元件符号说明
发光二极管 100
蓝宝石基板 110
碳纳米管 120
间隙 121
未掺杂的GaN层 130
N型GaN层 140
活性层 150
P型GaN层 160
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
以下参照图示，对本发明的发光二极管及发光二极管的制造方法进行进一步的说明。
请参见图1，本发明第一实施例所提供的发光二极管100包括蓝宝石基板110、碳纳米管120、未掺杂的GaN层130、N型GaN层140、活性层150以及P型GaN层160。所述碳纳米管120覆盖在蓝宝石基板110的表面，碳纳米管120之间形成有间隙121以暴露出蓝宝石基板110的部分表面。在本实施例中，所述碳纳米管120的管径为15~30 nm。各个碳纳米管120之间相互间隔且平行蓝宝石基板111的表面。所述未掺杂的GaN层130形成在蓝宝石基板110的表面且覆盖所述碳纳米管120。所述N型GaN层140、活性层150以及P型GaN层160依次形成在未掺杂的GaN层130的表面。根据需要，所述活性层150为多量子阱层。
在上述发光二极管100中，蓝宝石基板110的表面覆盖有碳纳米管120。当在蓝宝石基板110上生长未掺杂的GaN层130的时候，所述碳纳米管120将可以作为一个掩膜。即，所述未掺杂的GaN层130将在蓝宝石基板110的未被碳纳米管120覆盖的区域进行生长，然后再侧向生长以覆盖碳纳米管120。上述侧向生长的过程可降低未掺杂的GaN层130的晶体缺陷，从而使后续生长的N型GaN层140、活性层150以及P型GaN层160的晶体品质较好。
图2至图5为对上述发光二极管进行X射线衍射中ω扫描的方法所得出的数据。纵坐标表示的是ω扫描所得到半高宽度。横坐标为0的数值代表所生长的发光二极管磊晶结构中心原点处测试得出的数据。横坐标为-15及15的数值分别代表所生长的发光二极管磊晶结构中心原点偏左15mm以及偏右15mm处测试得出的数值。图2是对从蓝宝石基板的（002）面所生长的GaN层的（1-100）面进行ω扫描所得出的测试数据。A1代表在覆盖有碳纳米管的蓝宝石基板上生长的GaN层，B1代表在未覆盖有碳纳米管的蓝宝石基板上生长的GaN层。可见，无论是在中心原点处还是在中心原点偏左15mm或者偏右15mm处，在覆盖有碳纳米管的蓝宝石基板生长的GaN层的ω扫描的半高宽度都小于直接在蓝宝石基板上生长的GaN层的ω扫描的半高宽度。图3是对从蓝宝石基板的（002）面所生长的GaN层的（11-20）面进行ω扫描所得出的测试数据。图4是对从蓝宝石基板的（102）面所生长的GaN层的（1-100）面进行ω扫描所得出的测试数据。图5是对从蓝宝石基板的（102）面所生长的GaN层的（11-20）面进行ω扫描所得出的测试数据。A2、A3和A4分别代表在覆盖有碳纳米管的蓝宝石基板上生长的GaN层；B2、B 3和B 4分别代表在未覆盖有碳纳米管的蓝宝石基板上生长的GaN层。可见，图3至图5表现出于图2相同的规律，即，在覆盖有碳纳米管的蓝宝石基板生长的GaN层的ω扫描的半高宽度都小于直接在蓝宝石基板上生长的GaN层的ω扫描的半高宽度。由于ω扫描所测试得出的半高宽度与晶格品质密切相关，半高宽度越小，晶格品质越好。因此，在覆盖有碳纳米管的蓝宝石基板生长的GaN层的晶格品质要优于直接在蓝宝石基板上所生长的GaN层的晶格品质。
图6所示的是所提供的发光二极管100的电流-光强特性图。C代表在覆盖有碳纳米管的蓝宝石基板上生长的发光二极管；D代表在未覆盖有碳纳米管的蓝宝石基板上生长的发光二极管。可见，在对发光二极管施加相同的电流的情况下，在蓝宝石基板上覆盖有碳纳米管的发光二极管的亮度要比直接在蓝宝石基板上生长的发光二极管的亮度要高。
本发明还提供了一种发光二极管100的制造方法，其包括以下步骤：
提供一个蓝宝石基板110。
在蓝宝石基板110的表面覆盖多个碳纳米管120。所述碳纳米管120之间形成有间隙121以暴露出蓝宝石基板110的部分表面。根据需要，碳纳米管120的管径为15~30nm，各个碳纳米管120之间相互间隔且平行蓝宝石基板111的表面。
在蓝宝石基板110的未被碳纳米管120覆盖的区域生长未掺杂的GaN层130，且所述未掺杂的GaN层130覆盖所述碳纳米管120。
在未掺杂的GaN层130表面生长N型GaN层140。
在N型GaN层140的表面生长活性层150。根据需要，所述活性层150为多量子阱层。
在活性层150的表面生长P型GaN层160。
在上述发光二极管的制造方法中，覆盖在蓝宝石基板110表面的多个碳纳米管120可使到未掺杂的GaN层130形成侧向生长，从而降低其晶格缺陷，提高其晶体品质。相应地，后续生长的N型GaN层140、活性层150以及P型GaN层160的晶格品质也会相应提高。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (8)

1.一种发光二极管，包括：
蓝宝石基板；
覆盖在蓝宝石基板表面的碳纳米管，碳纳米管之间形成有间隙以暴露出蓝宝石基板的部分表面；
未掺杂的GaN层，形成在暴露的蓝宝石基板的表面且覆盖所述碳纳米管；
N型GaN层，形成在未掺杂的GaN层表面；
活性层，形成在N型GaN层表面；以及
P型GaN层，形成在活性层表面。
2.如权利要求1所述的发光二极管，其特征在于，所述碳纳米管的管径为15~30nm。
3.如权利要求1所述的发光二极管，其特征在于，所述碳纳米管相互间隔且平行于蓝宝石基板的表面。
4.如权利要求1所述的发光二极管，其特征在于，所述活性层为多量子阱层。
5.一种发光二极管的制造方法，包括以下步骤：
提供一个蓝宝石基板；
在蓝宝石基板的表面覆盖多个碳纳米管，碳纳米管之间形成有间隙以暴露出蓝宝石基板的部分表面；
在蓝宝石基板的未被碳纳米管覆盖的区域生长未掺杂的GaN层，且所述GaN层覆盖所述碳纳米管；
在未掺杂的GaN层表面生长N型GaN层；
在N型GaN层表面生长活性层；以及
在活性层表面生长P型GaN层。
6.如权利要求5所述的发光二极管的制造方法，其特征在于，所述碳纳米管的管径为15~30nm。
7.如权利要求5所述的发光二极管的制造方法，其特征在于，所述碳纳米管相互间隔且平行于蓝宝石基板的表面。
8.如权利要求5所述的发光二极管的制造方法，其特征在于，所述活性层为多量子阱层。
CN201210453099.1A 2012-11-13 2012-11-13 发光二极管及发光二极管制造方法 Pending CN103811606A (zh)

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Citations (2)

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Publication number Priority date Publication date Assignee Title
CN102244162A (zh) * 2011-07-14 2011-11-16 北京燕园中镓半导体工程研发中心有限公司 一种发光二极管的制备方法
CN102760806A (zh) * 2011-04-29 2012-10-31 清华大学 发光二极管

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TW201238076A (en) * 2011-03-14 2012-09-16 Hon Hai Prec Ind Co Ltd Light-emitting semiconductor chip and method for manufacturing the same

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CN102760806A (zh) * 2011-04-29 2012-10-31 清华大学 发光二极管
CN102244162A (zh) * 2011-07-14 2011-11-16 北京燕园中镓半导体工程研发中心有限公司 一种发光二极管的制备方法

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