CN103811473B - Multi-source controllable resistive random access memory with multi-layer film structure and preparation method thereof - Google Patents
Multi-source controllable resistive random access memory with multi-layer film structure and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a multi-field controllable resistive random access memory with a multi-layer film structure and a preparation method thereof. The resistive random access memory is composed of a piezoelectric substrate, a conductive lower electrode, a ferroelectric thin film layer, an upper electrode thin film layer and a gate electrode, wherein the piezoelectric substrate is made from a PMN-PT (Plumbum Magnesium Niobate ) single crystal material; the conductive lower electrode is a manganite thin film; the ferroelectric thin film layer is a BaTiO3 or BiFeO3 ferroelectric thin film; the upper electrode layer and the gate electrode are Pt, Au or Al conductive thin films. The preparation method of the memory comprises the steps of depositing the conductive lower electrode thin film layer on the piezoelectric substrate, next, depositing the single ferroelectric thin film layer or a heterojunction, and finally, depositing the upper electrode thin film and the gate electrode. The memory of the structure has excellent electro-resistive effect, and the electro-resistance can be regulated dynamically by virtue of a field effect structure established with the piezoelectric substrate, and therefore, multi-field regulation and control of the resistive state of a memory device are realized and the design flexibility of the memory can be improved; the multi-field controllable resistive random access memory with the multi-layer film structure is significant for increasing the manufacturing quantity of data memory devices in China.
Description
The application obtain Tianjin Natural Science Fund In The Light (bullets: 11jczdjc21800,11jcybjc02700),
State natural sciences fund (bullets: 11004148,11104202) return to the homeland scientific research initial funding with Ministry of Education students abroad
Subsidy.
Technical field
The invention belongs to the technical field of information recording device, it is related to new non-volatile information recording device important composition portion
The development and research dividing, resistance-variable storing device of more particularly a kind of many multi-sources regulation and control and preparation method thereof.
Background technology
Individually newly open up a chapter in international semiconductor device development route map (itrsd) of 2007, be named as " new
Memory device and material ", wherein emphasizes, the memory device tool based on new information storage mechanism of design research and development a new generation
There is important meaning.Main flow memory device in Vehicles Collected from Market is flash memory (flash memory) and dynamic random access memory
(dram).Resistive ram (the resistive random access that resistance changes is regulated and controled using the signal of telecommunication
Memory, rram) advantage of both the above device can be had concurrently, thus become a kind of Future Information storage of great competitiveness
Device, by extensive concern and the further investigation of various countries scientific research personnel.And iron electric polarization switching process is not related to the adjoint of defect
Migrate, thus be expected to using the electroluminescent resistive device of ferroelectricity of metal-ferroelectric thin film-metal (mfm) structure of ferroelectric thin film preparation
Obtain the commercial devices of higher storage stability.
Electroluminescent resistive (resistive switching) effect is in ferroelectricity tunnel junctions (ferroelectric
Tunnel junction, ftj) in be observed.In such tunnel junctions, the thickness due to ferroelectric thin film is only several nanometers,
So quantum tunneling electric current is main electric current transmission mechanism.But the electroluminescent resistive effect in ftj should be all by with atomic force
The analysis and testing technology of microscope (afm) is characterized, and this is that electrode in afm measuring technology uses probe tip,
Its corresponding capacitor area and its small, can avoid being easily caused excessive electric leakage due to ultra-thin ferroelectric thin film in ftj
Stream.Message code for storage in information recording device tends to be affected by excessive leakage current, therefore ftj structure
Memory device is very difficult to apply in the Metal-oxide-semicondutor integrated technique of current main flow.In addition, ferroelectricity diode
(ferroelectric diode) also shows electroluminescent resistive effect and answers, and the thickness of the ferroelectric thin film in ferroelectricity diode will than ftj
Thick its is about tens and arrives hundreds of nanometer, but the measurement result of its electronic transport often cannot show steep at iron electric polarization upset
Become；And include using pb (ti, zr) o3, baxsr1-xtio3, bifeo3Etc. the ferroelectricity diode being employed as ferroelectric layer
The coefficient (resistive switching coefficient, rsc=rmax/rmin) of electroluminescent resistive typically smaller than 500.
Solving one of above difficult approach is the memory device building metal-ferroelectricity-quasiconductor (mfm) structure.Compare
In metal electrode, lead to electron screening effect therein weaker because the carrier density in semi-conducting electrode is relatively low.This will draw
Play the bending of interface band structure, consumingly change the distribution of potential, thus being expected to obtain in mfm structure larger electroluminescent
Resistive coefficient.Meanwhile, many excellent characteristics that semiconductor layer material has also are expected to improve the resistive coefficient of memory device, such as manganese
The excellent chemical stability that oxide has and abundant separated feature.The latter shows that Mn oxide is in multiple electronics phases
Balance under, very sensitive in extraneous disturbance (as magnetic field, electric field or pressure etc.).Therefore adopt manganese-salt phosphating conduct
The semi-conducting electrode layer of mfs structure is expected to the significantly electroluminescent resistive effect of acquisition and answers, and can realize the double source tune in electric field and magnetic field
Control.But the impact of the accumulation of the electric charge in semi-conducting electrode layer and the state that the exhausts storage performance to mfs structure lacks always
Weary direct experimental evidence, and research table groups different in the world deposits to the conclusion of the function of semiconductor layer in mfs structure
In huge difference.The effect of therefore appropriate description semiconductive thin film is a huge challenge, and its difficulty is to be difficult to former
Position ground removes the coefficient of electroluminescent resistive by changing the number of carrier in semiconductor layer.
Content of the invention
Current resistive memory is all to realize the resistance regulation and control of device using single extra electric field, and the present invention is directed to
The deficiencies in the prior art, design a kind of multi-layer film structure of metal/ferroelectric layer/manganese-salt phosphating, and are grown on
Have on the single crystal substrates of piezoelectric property, propose a kind of new preparation method simultaneously.Finished product of the present invention has high electroluminescent
Resistive coefficient, finished product of the present invention can pass through to change the number of carrier in semiconductor layer thus adjusting with realizing dynamic in-situ in situ
Control the coefficient of electroluminescent resistive it is achieved that many of electroluminescent resistance coefficient regulate and control.
For achieving the above object, the invention discloses following technology contents:
A kind of resistance-variable storing device of the multi-source regulation and control of multi-layer film structure, including ferro-electricity single crystal substrate 1, conductive bottom electrode 2, ferrum
Thin film layer or hetero junction layer 3, upper electrode film layer 4, gate electrode layer 5；It is characterized in that: conductive bottom electrode 2 is located at ferroelectricity list
Between brilliant substrate 1 and ferroelectric thin film layer or hetero junction layer 3, located at top layer, gate electrode layer 5 is as orlop for upper electrode film layer 4.
Ferro-electricity single crystal substrate 1 of the present invention is pmn-pt；Described conductive bottom electrode 2 is laxsr1-xmno3Or
laxca1-xmno3The value of Mn oxide, wherein x is in 0.1-0.2；Described ferroelectric thin film layer or hetero junction layer 3 are batio3Or
bifeo3A kind of or multi-heterostructure-layerses in ferroelectric thin film；Described upper electrode film layer 4 OR gate electrode layer 5 is that pt, au or al lead
One of conductive film.
The thickness of described ferro-electricity single crystal substrate 1 is 0.5 mm, and the thickness of conductive bottom electrode 2 is 10-50 nm；Ferroelectric thin
The thickness of film layer 3 is 50-300 nm；The thickness of upper electrode film layer 4 OR gate electrode layer 5 is 500 nm.
The present invention further discloses a kind of preparation method of the resistance-variable storing device of multi-source regulation and control of multi-layer film structure, it is special
Levy and be to carry out by the steps:
(1) adopt pulse laser vacuum deposition method, conductive bottom electrode 2, ferrum are sequentially depositing on described ferro-electricity single crystal substrate 1
Thin film layer or hetero junction layer 3, form the first finished product of the resistance-variable storing device of this multi-source regulation and control；
(2) cover the mask plate with a diameter of 0.2mm hole on the first finished product that step (1) is obtained, using vacuum
The deposition upper electrode film layer 4 of the upper surface in semi-finished product for the method for deposition；Then under the ferro-electricity single crystal substrate 1 of semi-finished product
Surface gate electrode layer 5, forms the semi-finished product of the resistance-variable storing device of this multi-source regulation and control；
(3) the semi-finished product sample made in step (2) is placed in annealing furnace, in 500 DEG C of temperature in air atmosphere
Lower annealing 3 hours, that is, obtain the finished device of the resistance-variable storing device of multi-source regulation and control of multi-layer film structure.
Vacuum deposition method in described step (1) is the method for pulsed laser deposition, and the gas of deposition process is using high-purity
o2Gas；When conductive bottom electrode 2 is Mn oxide, using high-purity o2Gas.The depositing temperature of conductive bottom electrode is 750 DEG C, ferroelectricity
The depositing temperature of thin layer or hetero junction layer 3 is 800 DEG C, and the depositing temperature of upper electrode film layer 4 and gate electrode layer 5 is at 250 DEG C.
In described step (1), multilayer film thin film is on-line continuous growth or offline multiple devices substep grows；Described step
Ferro-electricity single crystal substrate makes annealing treatment in the lehr, obtains regular surface step.The atmosphere of annealing process is oxygen, annealing treatment
The temperature of reason is 700 DEG C.
The heat treatment step of surface pretreatment before described step (2) is carried out, can be added according to current demand: by step (1)
The semi-finished product being obtained are placed in annealing furnace, make annealing treatment 3 hours in oxygen atmosphere, and temperature is 700 DEG C.
In described step (1), required substrate is placed in cleaning in cleaning liquid, and cleaning liquid is acetone and ethanol, cleaning
Time is 300 seconds, and temperature is 70 DEG C；Cleanout fluid in described step (3) adopts commercial electronic abluent (commercially available) or direct
Deionized water；In cleaning process, rinse liquid temperature used is room temperature.
The present invention further discloses the resistance-variable storing device of multi-layer film structure multi-source regulation and control is realizing memory device Resistance states
Many regulation and control, improve reservoir designs flexibility ratio aspect application.The resistive memory of many regulation and control of the present invention can be answered
Be used as the unit of information Store, such as in all kinds of solid-state nonvolatile memories, such as ferroelectricity diode memory, ferroelectric field effect
Transistor is lived in resistance-variable storing device.
Further, the preparation method of dielectric film and conductive film and process include following technological processes to the present invention:
(1) heat treatment of hetero-junctions；The heat of surface pretreatment before described step b is carried out, can be added according to current demand
Process step: the semi-finished product that step a is obtained are placed in annealing furnace, makes annealing treatment 3 hours in oxygen atmosphere, and temperature is
700℃.
(2) cleaning treatment of substrate: in described step a, required substrate is placed in cleaning in cleaning liquid, cleaning liquid is
Acetone and ethanol.The time of cleaning is 300 seconds.Temperature is 10-70 DEG C.Cleanout fluid in described step c adopts commercial electronic clear
Lotion or direct deionized water；In cleaning process, rinse liquid temperature used is 60 DEG C.
(3) heat treatment of substrate: described step ferro-electricity single crystal substrate makes annealing treatment in the lehr, obtains regular surface
Step.The atmosphere of annealing process is oxygen, and the temperature of annealing is at 600 DEG C.
The storage performance of the resistive memory of many tune of the present invention can be by detecting the resistance of device with additional
The curvilinear motion of electric field and characterized, the such as appended below preparation method of taking the embodiment 1 as a example given present invention and
Specific sign and analysis.
Brief description
Fig. 1 is a kind of structural representation of the resistance-variable storing device of multi-source regulation and control of present invention novel multi-layer membrane structure；
Wherein 1 is ferro-electricity single crystal substrate, 2 is conductive bottom electrode, 3 is ferroelectric thin film layer or hetero junction layer, 4 is that Top electrode is thin
Film layer, 5 be gate electrode layer；
Fig. 2 is the xrd test chart of deposited samples in the embodiment of the present invention 1；
Fig. 3 is deposited samples la in the embodiment of the present invention 10.8ca0.2mno3The resistance of layer varies with temperature rule figure；
Fig. 4 is the ferroelectric properties test chart of deposited samples in the embodiment of the present invention 1；
Fig. 5 is the variation diagram with extra electric field for the electric current of deposited samples in the embodiment of the present invention 1, and illustration is shown that sample
The differential resistance of product is with the change of extra electric field；
Fig. 6 is in accumulation for sample resistivity in the embodiment of the present invention 2 changes with gate voltage and exhausts under different conditions
Graph of a relation；
Fig. 7 occurs with the change of substrate field effect transistor gate voltage for the electric current of hetero-junctions sample in the embodiment of the present invention 3
The graph of a relation changing.
Specific embodiment
Below it is only presently preferred embodiments of the present invention it is impossible to the scope of the present invention is limited with this.I.e. generally according to Shen of the present invention
Please the impartial change made of the scope of the claims and modification, all should still belong to the scope that patent of the present invention covers.Had with embodiment below
The structure of the body explanation present invention and preparation method:
Embodiment 1
A kind of resistance-variable storing device (see figure 1) of the multi-source regulation and control of multi-layer film structure, including under ferro-electricity single crystal substrate 1, conduction
Electrode 2, ferroelectric thin film layer or hetero junction layer 3, upper electrode film layer 4, gate electrode layer 5；It is characterized in that: conductive bottom electrode located at
Between ferro-electricity single crystal substrate and ferroelectric thin film layer or hetero junction layer, located at top layer, gate electrode layer is as under for upper electrode film layer
Layer；Described ferro-electricity single crystal substrate is pmn-pt；Described conductive bottom electrode is laxsr1-xmno3The value of Mn oxide, wherein x
In 0.1-0.2；Described ferroelectric thin film layer or hetero junction layer are batio3；Described upper electrode film layer OR gate electrode layer be
pt.The thickness of described ferro-electricity single crystal substrate is 0.5 mm, and the thickness of conductive bottom electrode is 10nm；The thickness of ferroelectric thin film layer is
50 nm；The thickness of upper electrode film layer OR gate electrode layer is 500 nm.
Embodiment 2
A kind of resistance-variable storing device (see figure 1) of the multi-source regulation and control of multi-layer film structure, including ferro-electricity single crystal substrate, conductive lower electricity
Pole, ferroelectric thin film layer or hetero junction layer, upper electrode film layer, gate electrode layer；It is characterized in that: conductive bottom electrode is located at ferroelectricity list
Between brilliant substrate and ferroelectric thin film layer or hetero junction layer, upper electrode film layer is placed in orlop located at top layer, gate electrode layer.
Ferro-electricity single crystal substrate of the present invention is pmn-pt；Described conductive bottom electrode is laxca1-xmno3Manganese aoxidizes
The value of thing, wherein x is in 0.1-0.2；Described ferroelectric thin film layer or hetero junction layer are bifeo3Ferroelectric thin film；Described Top electrode
Thin layer OR gate electrode layer is au or al.The thickness of described ferro-electricity single crystal substrate is 0.5 mm, and the thickness of conductive bottom electrode is
40 nm；The thickness of ferroelectric thin film layer is 200 nm；The thickness of upper electrode film layer OR gate electrode layer is 500 nm.
Embodiment 3
The structure of the transparent conductive oxide film of multi-layer film structure is: substrate pmn-pt, and thickness is 0.5mm；Bottom electrode
Layer is la0.8ca0.2mno3, thickness is 30nm；Ferroelectricity bto thicknesses of layers is 300nm；The thickness of upper electrode layer pt is 500nm;
The thickness of ag gate electrode layer is 500nm.The temperature of the deposition of three-layer thin-film is respectively 750 DEG C, 800 DEG C and room temperature, makes during deposition
Gas is o respectively2(60pa), o2(10pa) with ar gas (0.02pa).Fig. 2 shows bto/ la0.8ca0.2mno3/pmn-
X-ray diffraction (xrd) collection of illustrative plates of pt structure.The sample preparing is with 500 DEG C and high-purity o2The lower annealing of stream protection 2 hours.Ag door
In the method for electrode layer thermal evaporation high vacuum chamber at room temperature, evaporation preparation completes.
Embodiment 4
The structure of the transparent conductive oxide film of multi-layer film structure is: substrate pmn-pt, and thickness is 0.5mm；Bottom electrode
Conductive layer is la0.8ca0.2mno3, thickness is 50nm；Ferroelectric thin film layer thickness is 400nm；The thickness of upper electrode layer pt is
500nm;The thickness of ag gate electrode layer is 500 nm.The temperature of the deposition of three-layer thin-film is respectively 750 DEG C, 800 DEG C and room temperature,
The gas using during deposition is o respectively2(60pa), o2(10pa) with ar gas (0.02pa).Fig. 3 shows la0.8ca0.2mno3Layer
Resistance variation with temperature relation.Fig. 4 shows pt/bto/ la0.8ca0.2mno3The ferroelectric hysteresis loop of/pmn-pt and displacement electricity
The graph of a relation of stream.
Embodiment 5
The structure of the transparent conductive oxide film of multi-layer film structure is: substrate pmn-pt, and thickness is 0.5mm；Bottom electrode
Layer is la0.8ca0.2mno3, thickness is 40nm；Ferroelectricity bifeo3Thicknesses of layers is 500nm；The thickness of upper electrode layer pt is 500nm;
The thickness of ag gate electrode layer is 500nm.The temperature of the deposition of three-layer thin-film is respectively 750 DEG C, 700 DEG C and room temperature, makes during deposition
Gas is o respectively2(60pa), o2(20pa) with air (0.02pa).The sample preparing is with 500 DEG C and high-purity o2Stream is protected
The lower annealing of shield 2 hours.In the method for ag gate electrode layer thermal evaporation high vacuum chamber at room temperature, evaporation preparation completes.Fig. 5 divides
Do not show pt/bto/ la0.8ca0.2mno3The electric current of/multilayer film and resistance are with the variation relation of applied voltage.
Embodiment 6
The structure of the transparent conductive oxide film of multi-layer film structure is: substrate pmn-pt, and thickness is 0.5mm；Bottom electrode
Layer is la0.9ca0.1mno3, thickness is 30nm；Ferroelectricity bto thicknesses of layers is 300nm；The thickness of upper electrode layer ag is 500nm;
The thickness of ag gate electrode layer is 500nm.The temperature of the deposition of three-layer thin-film is respectively 750 DEG C, 800 DEG C and room temperature, makes during deposition
Gas is o respectively2(60pa), o2 (10pa) and ar gas (0.02pa).The sample preparing is with 500 DEG C and high-purity o2Stream is protected
The lower annealing of shield 2 hours.In the method for ag gate electrode layer thermal evaporation high vacuum chamber at room temperature, evaporation preparation completes.Fig. 6 shows
Show the impact to the electrode resistance being grown on thereon for the dipole polarization direction change in substrate pmn-pt, illustration therein shows
The iron electric polarization of pmn-pt and displacement current change.Fig. 7 shows bto/ la0.8ca0.2mno3The electric current of/pmn-pt structure
Graph of a relation by the gate voltage controlling changing of fet structure.
Embodiment 7
Preparation method and the concrete analysis of the present invention to be described with embodiment 1 below.
La is sequentially prepared on 0.5mm thickness pmn-pt substrate using pulsed laser deposition0.8ca0.2mno3Thin film and bto
Thin film, the temperature of deposition is respectively 700 DEG C and 800 DEG C, la0.8ca0.2mno3Thicknesses of layers is 30 nanometers, and bto thicknesses of layers is
300 nanometers.The distance of target to substrate is 55mm.The temperature of the deposition of three-layer thin-film is respectively 750 DEG C, 800 DEG C and room temperature, sinks
The gas using when long-pending is o respectively2(60pa), o2(10pa) with ar gas (0.02pa).
After completing above-mentioned deposition, sample is transferred into depositing ag thin film in the process chamber of vacuum evaporation equipment, uses
Raw material silver strip.The thickness of ag thin film is 500 nanometers.Depositing temperature is room temperature, and the air pressure of evaporation is less than 0.02pa, serves as a contrast
Bottom is to target apart from 55mm.The sample preparing is with 300 degrees Celsius and high-purity n2The lower annealing of stream protection 2 hours.
The sample of final deposition is tested by xrd, as shown in Figure 2.Result shows, the bto in thin film and
la0.8ca0.2mno3It is all epitaxial orientation growth, multilayer film has preferable crystalline quality, la0.8ca0.2mno3Resistance measurement survey
Amount result is as shown in figure 3, show good metal-insulator transition.Fig. 4 gives ag/bto/la0.8ca0.2mno3/pmn-
The ferroelectricity loop line of pt multiple structure and displacement current loop line, show that the crystalline quality of hetero-junctions is good.Can observe from Fig. 4
Arrive, the displacement current of heterojunction material of the present invention is slightly above grown in srtio3Suprabasil hetero-junctions system, this comes from pmn-
Pt is adapted to larger with the lattice of hetero-junctions thereon, and this also implys that the resistive characteristic of hetero-junctions.The hetero-junctions system of the present invention
Electric current and resistance variations are as shown in figure 5, the resistance transition of the hetero-junctions significantly under applied voltage effect as seen from the figure.For
The regulating and controlling effect of the fet structure that inspection substrate pmn-pt builds, the present invention adopts the electric field of 10 kv/cm to pmn-pt base
Bottom carries out pre- polarization, by changing the direction of polarizing voltage, changes growth la thereon0.8ca0.2mno3The electricity of thin film
Resistive.Fig. 6 shows the impact to the electrode resistance being grown on thereon for the dipole polarization direction change in substrate pmn-pt, its
In illustration show the iron electric polarization of pmn-pt and displacement current change.Fig. 7 shows bto/ la0.8ca0.2mno3/pmn-
The electric current of pt structure is subject to the graph of a relation of the gate voltage controlling changing of fet structure.Thus figure is as can be seen that applied by change
The extra electric field being added on pt/bto/lcmo hetero-junctions can effectively change the resistance of hetero-junctions, and this effect is the electricity of hetero-junctions
Cause resistive characteristic.In the present invention, the coefficient highest of the electroluminescent resistive of plural layers hetero-junctions can reach 3000.In addition, by changing
Become and put on the direction of an electric field on substrate it is also possible to effectively regulate and control the coefficient of electroluminescent resistive, as shown in fig. 7, thus showing
The resistance of the plural layers hetero-junctions of the present invention can be regulated and controled by two extra electric fields.In addition lcmo thin film has magneto-resistor
Effect, that is, its resistance can change under the influence of externally-applied magnetic field, thus changing the resistance value of whole hetero-junctions.
Embodiment 8
Application Example
The resistive memory of many regulation and control of the present invention can apply the unit as information Store, is applied to all kinds of solid-states
In nonvolatile memory, such as in ferroelectricity diode memory, ferro-electric field effect transistor and resistance-variable storing device.In Vehicles Collected from Market
Main flow memory device be flash memory (flash memory) and dynamic random access memory (dram).Future is expected to replace flash memory
Include ferroelectricity diode memory, ferro-electric field effect transistor and resistance-variable storing device with the memory device of dram.And we invent
Many regulation and control memory device unit can be applied to wherein, and make device data storage and read have bigger
Motility.Specifically it is compared as follows:
| Relatively | Control measures | Resistive coefficient | Magnetic field regulates and controls | Resistive regulates and controls in situ |
| Existing memory device such as flash memory | Single electric field | 50-500 | Not all right | Infeasible |
| The resistance-variable storing device of many regulation and control of the present invention | Two even more than electric field-tunable | 100-3000 | Feasible | Feasible |
To sum up, material of the present invention has the characteristic of preferably electroluminescent resistance, and can be changed by the direction of multiple extra electric fields
Become the coefficient of electroluminescent resistive it is achieved that the original position dynamically many regulation and control of heterogeneous junction resistance, can greatly meet and not write letters
The requirement of breath memory device.
Claims (3)
1. a kind of preparation method of the resistance-variable storing device of multi-source regulation and control of multi-layer film structure is it is characterised in that entered by the steps
OK:
(1) adopt pulse laser vacuum deposition method, conductive bottom electrode (2), ferroelectric thin are sequentially depositing on ferro-electricity single crystal substrate (1)
Film layer or hetero junction layer (3), form the first finished product of the resistance-variable storing device of this multi-source regulation and control；
(2) mask plate of a diameter of 0.2mm hole is covered on the first finished product that step (1) is obtained, using vacuum-deposited side
Deposition upper electrode film layer (4) of the upper surface in semi-finished product for the method；Then in the lower surface of the ferro-electricity single crystal substrate (1) of semi-finished product
Gate electrode layer (5) forms the semi-finished product of the resistance-variable storing device of this multi-source regulation and control；
(3) the semi-finished product sample made in step (2) is placed in annealing furnace, moves back at a temperature of 500 DEG C in air atmosphere
Fire is processed 3 hours, that is, obtain the finished device of the resistance-variable storing device of multi-source regulation and control of multi-layer film structure；In described step (1)
Vacuum deposition method is the method for pulsed laser deposition, and the gas of deposition process adopts high-purity o2Gas；Conductive bottom electrode (2) is manganese oxygen
During compound, using high-purity o2Gas, the depositing temperature of conductive bottom electrode (2) is 750 DEG C, ferroelectric thin film layer or hetero junction layer
(3) depositing temperature is 800 DEG C；In described step (1), multilayer film thin film is on-line continuous growth or offline multiple devices substep
Growth；Described ferro-electricity single crystal substrate makes annealing treatment in the lehr, obtains regular surface step；The atmosphere of annealing process is oxygen
Gas, the temperature of annealing is 700 DEG C；
Described ferro-electricity single crystal substrate is pmn-pt；Described conductive bottom electrode is laxsr1-xmno3Or laxca1-xmno3Manganese aoxidizes
The value of thing, wherein x is in 0.1-0.2；Described ferroelectric thin film layer or hetero junction layer are batio3Or bifeo3A kind of in ferroelectric thin film
Or multi-heterostructure-layerses；Described upper electrode film layer OR gate electrode layer is one of pt, au or al conductive film.
2. preparation method according to claim 1, before described step (2) is carried out, can add surface according to current demand
The heat treatment step of pre-treatment: the semi-finished product that step (1) is obtained are placed in annealing furnace, makes annealing treatment in oxygen atmosphere
3 hours, temperature was 700 DEG C.
3. preparation method according to claim 1 it is characterised in that: in described step (1), required substrate is placed in cleaning
Clean in liquid, cleaning liquid is acetone and ethanol, the time of cleaning is 300 seconds, and temperature is 70 DEG C；In described step (3)
Cleanout fluid adopts commercial electronic abluent or direct deionized water；In cleaning process, rinse liquid temperature used is room temperature.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102439724B (en) * | 2010-01-28 | 2013-12-04 | 复旦大学 | Ferro-resistive random access memory (ferro-rram), operation method and manufacturing mehtod thereof |
| CN102593191A (en) * | 2011-01-17 | 2012-07-18 | 中国科学院物理研究所 | Oxide semiconductor heterostructure modulated by biasing electric field, preparing method and device thereof |
| CN103236497A (en) * | 2013-04-25 | 2013-08-07 | 桂林电子科技大学 | Bismuth-titanate-based resistive random access memory and preparation method for same |
| CN103345935A (en) * | 2013-06-03 | 2013-10-09 | 清华大学 | Resistive random access memory having heterojunction structure and reading method thereof |
Non-Patent Citations (1)
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| 新一代存储技术：阻变存储器;王源等;《北京大学学报》;20110531;第47卷(第3期);第565-572页 * |
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