CN103811380B - Batch-type substrate-processing apparatus - Google Patents
Batch-type substrate-processing apparatus Download PDFInfo
- Publication number
- CN103811380B CN103811380B CN201310541006.5A CN201310541006A CN103811380B CN 103811380 B CN103811380 B CN 103811380B CN 201310541006 A CN201310541006 A CN 201310541006A CN 103811380 B CN103811380 B CN 103811380B
- Authority
- CN
- China
- Prior art keywords
- substrate
- annular support
- batch
- cassette
- processing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 127
- 239000012636 effector Substances 0.000 claims abstract description 57
- 230000002093 peripheral effect Effects 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims 2
- 238000000034 method Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
Abstract
A kind of batch-type substrate-processing apparatus is disclosed.The batch-type substrate-processing apparatus of one embodiment of the present invention（100）, possess and multiple substrates loaded in a manner of stacked on top of one another（10）Cassette（200）, it is characterised in that including：Annular support（ring holder；300）, supporting substrate（10）Bottom, to load substrate（10）；Support bar（260）, from cassette（200）Vertical support frame（220、240）Prominent configuration, supports annular support（300）Bottom, to load annular support（300）；End effector（end effector；400）, from annular support（300）Outer peripheral face outside along with annular support（300）Space on same plane enters cassette（200）, supporting substrate（10）Bottom and with backing（bottom‑lift）Mode is by substrate（10）It is loaded onto cassette（200）Or from cassette（200）Unloading.
Description
Technical field
The present invention relates to batch-type substrate-processing apparatus.More particularly, relate to use backing（bottom-
lift）Formula end effector（end effector）The batch processing of load/unload is carried out to the substrate being placed on annular support
Formula substrate board treatment.
Background technology
Substrate board treatment is roughly divided into vapour deposition（Vapor Deposition）Device and annealing（Annealing）Dress
Put.
Vapor phase growing apparatus is transparent conductive layer, insulating barrier, metal level or the silicon to form the core texture for forming semiconductor
The device of layer, is divided into LPCVD（Low Pressure Chemical Vapor Deposition：Low-pressure chemical vapor deposition）Or
PECVD（Plasma-Enhanced Chemical Vapor Deposition：Plasma enhanced chemical vapor deposition）Deng
Chemical vapor deposition unit and sputtering（Sputtering）Deng physical vapor deposition device.
Annealing device be the regulation film deposited on the substrate to the silicon chip of semiconductor manufacturing etc crystallized, phase
The device of heat treatment process required for the processes such as change.
Fig. 1 is the stereogram for representing existing batch-type substrate-processing apparatus.Fig. 2 is at existing batch-type substrate
Manage the top view and sectional view of device.This existing batch-type substrate-processing apparatus is in Korean granted patent the 772462nd
Disclosed in publication.
Reference picture 1 and Fig. 2, existing batch-type substrate-processing apparatus, and with lower open opening portion with
It is internally formed receiving space and the reaction chamber for handling semiconductor fabrication process（It is not shown）It is interior, provided with for multiple substrates 10 with
Mode stacked on top of one another loads（loading）Cassette 20.
Moreover, the end effector of the loading to cassette 20 and unloading of substrate 10 by robotic arm（end effector）
40 from being arranged at workbench（It is not shown）On the storage box（It is not shown）Middle transfer comes.
Cassette 20 includes pillared three vertical support frames 22,24 of shape, formed protruded respectively from vertical support frame 22,24 with
The support bar 26 of 10 identical quantity of substrate.
Annular support is supported from three vertical support frames 22,24 to three support bars 26 prominent on same plane（ring
holder）30 bottom.Now, support bar 26 supports 3 points that are divided into each 120 degree in the circumference bottom of annular support 30.
Substrate 10 can be loaded on the top of annular support 30.The annular support 30 of annular can be by the bottom branch of pedestal 10
Support on the edge surface of circle.
Pass through the bottom of annular support 30 and the closed substrate 10 of support bar 26 for the outer space for disturbing annular support 30
Space, only expose the upper space of the spacial substrate 10 except support bar 26, can be clamped with top margin（top-edge-
grip）Formula end effector 40 carries out the load/unload of substrate 10.When the clipping end effector 40 of top margin enters in cassette 20
When entering work route in plane, in order to avoid the interference with support bar 26, the width of the clipping end effector 40 of top margin is can
The size from both sides between the interval of two support bars 26 of radial protrusion is inserted, and in the clipping end effector of top margin
40 end, which has, keeps out of the way groove 28, so as to avoid and the work route level to end effector 40 clipping with top margin
The interference for one support bar 26 of residue that direction protrudes.
However, existing batch-type substrate-processing apparatus, the bottom space of substrate 10, which is closed, hampers end execution
The entrance of device 40, using the clipping end effector 40 of top margin load/unload by only exposing the upper space of substrate 10
Carry, cause the spacing P between substrate 10 to become big.Specifically, the clipping end effector 40 of top margin is in order to from the upper of substrate 10
The both ends that subordinate drops and clamps substrate 10 must assure that minimal working space a, so such limitation expands spacing P
Greatly, the quantity of substrate 10 that can load on cassette 20 is caused to reduce.
In addition, the clipping end effector 40 of top margin is held to clamp substrate 10 with complicated structure by end
The step of step, end effector 40 in the entrance cassette 20 of row device 40 decline and clamp substrate 10 and end effector 40
The step of rising and unloading carried base board 10, so process time increase.
Further, the clipping end effector 40 of top margin clamps substrate 10, so the top of substrate 10 is in load/unload
It is likely to be exposed to polluter, is relatively contacted with the top of substrate 10 by end effector 40, the top production of substrate 10
Raw cut.
Citation
Patent document
Patent document 1：No. 772462 publication of Korean granted patent
The content of the invention
Therefore, the present invention is to solve each problem points of above-mentioned prior art, and it is an object of the present invention to provide can be with backing
（bottom-lift）Mode handles the batch-type substrate-processing apparatus for the substrate being placed on annular support.
In addition, present invention aims at provide to load on the substrate number of cassette by reducing the spacing between substrate to increase
Amount, by increasing capacitance it is possible to increase the batch-type substrate-processing apparatus of the processing substrate amount of each unit steps.
It is a further object of the invention to provide use at the batch-type substrate of the simple end effector of structure
Manage device.
Further, it is an object of the invention to provide the loading for reducing substrate and discharge time, so as to which technique be greatly decreased
The batch-type substrate-processing apparatus of time.
In order to reach above-mentioned purpose, the batch-type substrate-processing apparatus of one embodiment of the present invention, possess with upper and lower
The mode of stacking loads the cassette of multiple substrates, it is characterised in that including：Annular support（ring holder）, supporting substrate
Bottom, to load substrate；Support bar, configuration is protruded from the vertical support frame of cassette, the bottom of annular support is supported, to load ring-type
Support；End effector（end effector）, from the outside of the outer peripheral face of annular support along with annular support same plane
On space enter cassette, the bottom of supporting substrate and with backing（bottom-lift）Mode by substrate load on cassette or from
Cassette unloads.
In addition, in order to reach above-mentioned purpose, the batch-type substrate-processing apparatus of one embodiment of the present invention, possess with
Mode stacked on top of one another loads the cassette of multiple substrates, it is characterised in that including：Annular support, the bottom of supporting substrate, to carry
Put substrate；Support bar, configuration is protruded from the vertical support frame of cassette, is divided into 91 degree to 150 degree intervals, is carried in a manner of supported at three point
Put annular support；End effector, from the outside of the outer peripheral face of annular support along with the space on annular support same plane
Into cassette, substrate is simultaneously loaded on cassette in a manner of backing or unloaded from cassette by the bottom of supporting substrate.
According to the present invention of such composition, the substrate that is placed on annular support can be handled in a manner of backing by having
Effect.
In addition, the present invention has loads on the number of substrates of cassette by reducing the spacing between substrate so as to increase, can
Increase the processing substrate amount of each unit steps.
Further, the present invention has the effect that can use end effector simple in construction.
In addition, there is the present invention loading that can make substrate and discharge time to reduce, be greatly decreased the effect of process time
Fruit.
Further, the present invention has by supporting large-area substrates to prevent the curved of substrate with the optimized annular support of size
Bent effect.
Brief description of the drawings
Fig. 1 is the stereogram for representing existing batch-type substrate-processing apparatus.
Fig. 2 is the top view and sectional view of existing batch-type substrate-processing apparatus.
Fig. 3 is the stereogram for the batch-type substrate-processing apparatus for representing one embodiment of the present invention.
Fig. 4 is the top view and sectional view of the batch-type substrate-processing apparatus of one embodiment of the present invention.
Fig. 5 is the stereogram for the batch-type substrate-processing apparatus for representing other embodiments of the present invention.
Fig. 6 is the top view and sectional view of the batch-type substrate-processing apparatus of other embodiments of the present invention.
Reference：
5：Above opening portion
10：Substrate
20、200：Cassette
22、24、220、240：Vertical support frame
26、260：Support bar
28：Keep out of the way groove
30、300：Annular support
40：The clipping end effector of top margin
400：Bottom-supported type end effector
Embodiment
The aftermentioned detailed description on the present invention, with reference to the specific embodiment that can implement the present invention as example
The addition accompanying drawing of subrepresentation.Fully explained by these embodiments so that those skilled in the art can implement
The present invention.The numerous embodiments of the present invention are mutually different, but should not be construed as mutually exclusive.For example, it is recorded in the specific of this
Shape, structure and characteristic it is associated with an embodiment, without departing from the present invention spirit and protection domain scope
It is interior, it can be realized with other embodiment.Also, it is understood that the position of indivedual inscapes of each disclosed embodiment
Putting or configuring can be changed in the range of the spirit and protection domain without departing from the present invention.Therefore, it is described later detailed
Illustrate to be not intended to limit, Specifically, the scope of the present invention is only defined in all authority requirement and its equivalency range.Accompanying drawing
In similar reference there is same or similar function, and for convenience of description, it is possible to length, area and thickness
Degree etc. and its form carry out exaggerating expression.
In this manual, substrate can be regarded as including semiconductor substrate, for LED, LCD etc. display device base
Plate and solar cell substrate etc..
The structure of batch-type substrate-processing apparatus
Fig. 3 is the stereogram for the batch-type substrate-processing apparatus for representing one embodiment of the present invention, and Fig. 4 is the present invention
An embodiment batch-type substrate-processing apparatus top view and sectional view.
Reference picture 3, the batch-type substrate-processing apparatus 100 of one embodiment of the present invention include annular support（ring
holder）300 and backing（bottom-lift）Formula end effector 400.
Cassette 200 is that the batch-type substrate-processing apparatus crystalline substance of multiple substrates 10 can be loaded in a manner of stacked on top of one another
Boat.The material of cassette 200 can include quartz（quartz）, carborundum（SiC）, graphite（graphite）, carbon composite
（carbon composite）And silicon（Si）At least one of.
Cassette 200 can contain the pillared multiple vertical support frames 220,240 of shape, preferably comprise three vertical support frames 220,
240.The vertical support frame 200,240 of cassette 200 is thought of as into three below to illustrate.
Vertical support frame 220,240 is set on the section circumference of cassette 200 in a manner of occupying semicircle, not by vertical support frame
220th, the part on 240 circumference occupied, which is formed, allows opening portion 5 before the insertion of end effector 400, to allow substrate 10
Load/unload.
On the other hand, in Fig. 3 and Fig. 4, illustrate positioned at the horizontal side of the work route with end effector 400
To vertical support frame 240 as benchmark when, the angle A of itself and remaining two vertical support frames 220 is 91 degree, but is not limited to
This, can also be configured to allowing end effector 400 to insert in the scope in cassette 200, vertical support frame 240 and vertical support frame
220 angle forms 91 degree to 120 degree.Detailed content is aftermentioned in Fig. 5 and Fig. 6.
On each vertical support frame 220,240 with specified altitude interval configure oriented cassette 200 inner side protrude from it is same
The support bar of plane（support rod）260.
Support bar 260 supports the bottom of annular support 300 and can load annular support 300.Support bar 260 with 91 degree extremely
150 degree of interval is separated, and annular support 300 is supported in a manner of supported at three point, so that annular support 300 can be placed in branch
On strut 260.
Can be formed in the end of support bar 260 can more firmly load the step 262 of annular support 300.
When to substrate 10 with superhigh temperature（About 1200 DEG C to 1350 DEG C）When being heat-treated, in substrate 10 and annular support
Sagging as defined in may occurring in 300.It is therefore preferable that the supported at three point ring in a manner of being divided into each 120 degree of support bar 260
Shape support 300, so as to the weight of even support annular support 300 and the substrate on the top of annular support 300 10.
However, work as to substrate 10 with lower temperature to high temperature（About 500 DEG C to 800 DEG C）When being heat-treated, in substrate 10 and
Sagging can be somewhat reduced in annular support 300, thus reduce by etc. be separated into 120 degree in a manner of supported at three point ring-type
The necessity of support 300.Therefore, can be by support bar 260 and annular support 300 when being heat-treated with lower temperature to high temperature
Interval between 3 points of contact is separated into 91 degree to 150 degree.Specifically, from positioned at the operation road with end effector 400
What the prominent support bar 260 ' in the direction of vertical support frame 240 to central point C on the horizontal direction of line contacted with annular support 300
Angle B between the point that point and the support bar 260 " protruded from two adjacent vertical support frames 220 contact with annular support 300 can
For 91 degree to 150 degree.
Annular support 300 be used to prevent in high-temperature heat treatment process as substrate silicon crystal lattice crystal defect sliding
Generation, and be used for support by heavy caliber（300mm、450mm）Substrate 10 bottom to prevent from hanging down in structure.In order to
Corresponding to the chemical environment in hot environment and reaction process, annular support 300 is by ceramic-like, for example by carborundum（SiC）Shape
Into in addition, quartz can be included（quartz）, graphite（graphite）, carbon composite（carbon composite）And silicon
（Si）At least one of.
Annular support 300 is for stably supporting substrate 10, preferably with central shaft（Or central point C）Consistent mode is matched somebody with somebody
Put.Here, central shaft（Or central point C）It can be understood as the normal of the center of gravity of annular support 300（Or focus point（Origin））Or
The normal of the center of gravity of substrate 10（Or focus point（Origin））.On the other hand, annular support 300 is for effectively evenly supporting substrate
10 whole area, its diameter can be 0.6 to 0.8 times of the diameter of substrate 10.Particularly, in order that annular support 300
Inner side and 1/2 area of outside difference supporting substrate 10, the diameter of annular support 300 is preferably the 0.7 of the diameter of substrate 10
Times, but it is not limited to this, it is contemplated that technological temperature, the size of substrate and intensity etc. suitably change annular support 300
Diameter.
In addition, as a diameter of 300mm of substrate 10, the ring width of annular support 300 can be 2mm to 25mm, more preferably
Ring width is 2mm to 5mm.When annular support 300 uses diameter（External diameter）For the diameter of substrate 10 0.7 times of 210mm when, pass through by
The ring width of annular support 300 is set as 2mm to 25mm, and substrate 10 is about 1.85% with the area ratio that annular support 300 contacts
To 20.56%, when the ring width of annular support 300 is set as into 2mm to 5mm, area ratio that substrate 10 contacts with annular support 300
Example is about 1.85% to 4.56%.As other embodiment, when the diameter of annular support 300（External diameter）When being adopted as 199mm,
By the way that the ring width of annular support 300 is set as into 2mm to 25mm, the area ratio that substrate 10 contacts with annular support 300 is about
For 1.85% to 15.56%, by the way that the ring width of annular support 300 is set as into 2mm to 5mm, substrate 10 contacts with annular support 300
Area ratio be about 1.75% to 4.31%.Therefore, when the ring width of annular support 300 is set as into 2mm to 5mm, substrate
Only it is less than about 5% area in 10 areas to contact with annular support 300, so with the sagging same of substrate 10 can be prevented
When the advantages of further reducing the cut of the bottom of substrate 10.
On the other hand, as a diameter of 450mm of substrate 10, the ring width of annular support 300 can be adjusted, so as to prevent
Substrate 10 is reduced in the range of the cut of the bottom of substrate 10 while hanging down, and adjustment substrate 10 contacts with annular support 300
Area ratio.
Substrate 10 can be loaded on cassette 200 in a manner of backing or be unloaded from cassette 200 by end effector 400.
With further reference to Fig. 3 and Fig. 4, the bottom-supported type end effector 400 of one embodiment of the present invention can be from ring-type
The outside of the outer peripheral face of support 300 enters cassette 200, supporting substrate 10 along with the space on the same plane of annular support 300
Bottom to carry out the load/unload of substrate 10.When bottom-supported type end effector 400 enters the inside of cassette 200, in order to keep away
Exempt from the interference with annular support 300, end effector 400 there can be the shape of U-shaped fork.In addition, such as Fig. 4（b）Top view
Shown, end effector 400 is and dry between the support bar 260 ' that is protruded from vertical support frame 240 by the shape with U-shaped fork
Problem is disturbed also to can solve the problem that.In addition, such as Fig. 4（b）Sectional view shown in, end effector 400 is positioned at higher than support bar 260 "
Position, the inside of cassette 200, institute are entered with the height of state not overlapping with support bar 260 " and overlapping with annular support 300
Also can solve the problem that the interference problem of its support bar 260 " protruded with two vertical support frames 220.That is, end effector
400 are located at the position higher than the support bar 260 " protruded from two vertical support frames 220, so can solve the problem that interference problem.
In addition, in order to avoid the interference with annular support 300, Simultaneous Stabilization effectively supporting substrate 10 are preferably last
The distance d1 between two medial surfaces of actuator 400 is held to be more than the diameter of annular support 300, two lateral surfaces of end effector 400
Between distance d2 be less than substrate 10 diameter.
As an embodiment, as a diameter of 300mm of substrate 10, make between two medial surfaces of end effector 400
Distance d2s of the distance d1 between 200mm to 220mm, two lateral surfaces then uses 244mm to 260mm scope, can be avoided with this
With the interference between annular support 300 and two vertical support frames 220, so as to easily load/unload substrate 10.
As other embodiments, as a diameter of 450mm of substrate 10, make two medial surfaces of end effector 400
Between distance d1 be scope that the distance d2 between 300mm to 330mm, two lateral surfaces is 366mm to 390mm, can avoid and ring
The interference of shape support 300 and two vertical support frames 220, so as to easily load/unload substrate 10.
Fig. 5 is the stereogram for the batch-type substrate-processing apparatus for representing other embodiments of the present invention, and Fig. 6 is this hair
The top view and sectional view of the batch-type substrate-processing apparatus of bright other embodiment.In following Fig. 5 and Fig. 6 explanation
In, only description and the difference of above-mentioned Fig. 3 and Fig. 4 explanation, omit repeat specification.
Reference picture 5 and Fig. 6, it is able to confirm that the direction of the support bar 260 " protruded from vertical support frame 220 towards central point C.
In Fig. 3 and Fig. 4 batch-type substrate-processing apparatus 100, secure between vertical support frame 240 and two vertical support frames 220
Angle A（As one, 91 degree）Afterwards, the protrusion angle of the support bar 260 " protruded from vertical support frame 220 is adjusted, is propped up from vertical
Point that the prominent support bar 260 ' in the direction of from frame 240 to central point C contacts with annular support 300 and from two adjacent vertical branch
Angle B between the point that contact with annular support 300 of support bar 260 " that frame 220 protrudes is in the range of 91 degree to 150 degree, so that
Annular support 300 is set to form the mode of supported at three point.That is, the direction of the support bar 260 " protruded from vertical support frame 220 can also
Not towards central point C.
On the contrary, Fig. 5 and Fig. 6 batch-type substrate-processing apparatus 100 ', the support bar 260 " protruded from vertical support frame 220
Direction towards central point C, so only by adjusting the angle A of vertical support frame 240 and two vertical support frames 220, it becomes possible to adjust
The angle B for the point that whole support bar 260 contacts with annular support 300.But now, work as angle（A or B）During more than 120 degree,
End effector 400 may occur between vertical support frame 220 or support bar 260 " and end effector 400 when entering cassette 200
Interference, so can be by angle（A or B）91 degree to 120 degree are maintained, is preferably kept at 105 degree.
The action process of batch-type substrate-processing apparatus
Hereinafter, reference picture 4 and Fig. 6, the batch-type substrate-processing apparatus for employing bottom-supported type end effector 400 is illustrated
100 action process.Fig. 4 and Fig. 6 illustrates the uninstall process of substrate 10, but its loading procedure can be understood as uninstall process
Carry out in turn.
Reference picture 4（a）And Fig. 6（a）, on the end of three support bars 260 that configuration is protruded from vertical support frame 220,240
Annular support 300 is placed with, on the top of annular support 300 with annular support 300 and central shaft（Or central point C）Consistent side
Formula is placed with substrate 10.
Secondly, reference picture 4（b）And Fig. 6（b）, bottom-supported type end effector 400 enters by opening portion 5 before cassette 200
Enter.Now, end effector 400 has U-shaped fork can surround the outer peripheral face of annular support 300, from the outer of annular support 300
The space on same plane is occupied on the outside of side face, and it is high positioned at the support bar 260 " than being protruded from two vertical support frames 220
Position, so entering the fashionable interference that can be avoided with annular support 300 or support bar 260, and positioned at the bottom of substrate 10.And
And end effector 400 can lift substrate 10 and substrate 10 is left defined height R with annular support 300.
Secondly, reference picture 4（c）And Fig. 6（c）, end effector 400 can be in the state of only supporting substrate 10 from cassette
200 are unloaded.
By using the bottom-supported type end effector 400 of the present invention, the height left using only substrate 10 and annular support 300
Degree R can just carry out the load/unload of substrate 10.That is, with needing to consider the subordinate from substrate during formation spacing P intervals
Drop and clamp the minimum working space a needed for substrate both ends, the thickness of end effector, the thickness and annular support of substrate
The batch-type substrate-processing apparatus of top margin method of clamping of height compare, the batch-type substrate of backing mode of the invention
Processing unit, need to only consider when forming spacing P intervals substrate and annular support leave height R, substrate thickness and
The height of annular support, so being able to ensure that the spacing P being greatly decreased.Therefore, by loading on the number of substrates of cassette,
So as to increase the processing substrate amount of per unit technique.
In addition, with will can be substituted for the clipping end effector of top margin of labyrinth needed for clamping substrate
Bottom-supported type end effector, so its is simple in construction, by using bottom-supported type end effector can reduce the loading of substrate with
And discharge time, the process time can be greatly decreased.
The present invention enumerates the preferred embodiment and is shown and illustrates, but is not limited to the embodiment party
Formula, the technology of the general knowledge with the technical field belonging to the present invention can be passed through in the scope of the spirit without departing from the present invention
Personnel carry out various deformation and change.Such variation and modification belong to the guarantor of the Patent request of the present invention and addition
Protect in the range of scope.
Claims (11)
1. a kind of batch-type substrate-processing apparatus, possessing the cassette that multiple substrates are loaded in a manner of stacked on top of one another, its feature exists
In, including：
Annular support, for the bottom of supporting substrate, to load substrate；
Support bar, configuration is protruded from the vertical support frame of cassette, for supporting the bottom of annular support, to load annular support；
End effector, it is brilliant along entering with the space on annular support same plane from the outside of the outer peripheral face of annular support
Substrate is simultaneously loaded onto cassette in a manner of backing or unloaded from cassette by boat, the bottom of supporting substrate,
0.6 times to 0.8 times of the diameter of a diameter of substrate of annular support.
2. a kind of batch-type substrate-processing apparatus, possessing the cassette that multiple substrates are loaded in a manner of stacked on top of one another, its feature exists
In, including：
Annular support, the bottom of supporting substrate, to load substrate；
Support bar, configuration is protruded from the vertical support frame of cassette, and be divided into 91 degree to 150 degree of interval, with supported at three point
Mode loads annular support；
End effector, it is brilliant along entering with the space on annular support same plane from the outside of the outer peripheral face of annular support
Substrate is simultaneously loaded onto cassette in a manner of backing or unloaded from cassette by boat, the bottom of supporting substrate,
0.6 times to 0.8 times of the diameter of a diameter of substrate of annular support.
3. batch-type substrate-processing apparatus according to claim 1 or 2, it is characterised in that
In the end of support bar formed with step, can fix and load annular support.
4. batch-type substrate-processing apparatus according to claim 1, it is characterised in that
A diameter of 300mm of substrate, the ring width of annular support is 2mm to 25mm.
5. batch-type substrate-processing apparatus according to claim 4, it is characterised in that
The ring width of annular support is 2mm to 5mm.
6. batch-type substrate-processing apparatus according to claim 1 or 2, it is characterised in that
End effector has the shape of U-shaped fork.
7. batch-type substrate-processing apparatus according to claim 6, it is characterised in that
Distance between two medial surfaces of end effector is more than the diameter of annular support, between two lateral surfaces of end effector away from
From the diameter less than substrate.
8. batch-type substrate-processing apparatus according to claim 2, it is characterised in that
Adjust from vertical support frame protrude support bar protrusion angle, by the supported at three point angular separation of annular support into 91 degree extremely
150 degree of interval.
9. batch-type substrate-processing apparatus according to claim 2, it is characterised in that
The support bar protruded from vertical support frame is configured to towards in the state of the central point of annular support or substrate, adjustment is vertical
Arrangement angles between support and adjacent vertical support frame, by the supported at three point angular separation of annular support into 91 degree to 120 degree
Interval.
10. batch-type substrate-processing apparatus according to claim 1 or 2, it is characterised in that
Cassette includes at least one of quartz, carborundum, graphite, carbon composite and silicon.
11. batch-type substrate-processing apparatus according to claim 1 or 2, it is characterised in that
Annular support includes at least one of quartz, carborundum, graphite, carbon composite and silicon.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120125073A KR101990533B1 (en) | 2012-11-06 | 2012-11-06 | Batch type semiconductor manufacturing device |
| KR10-2012-0125073 | 2012-11-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103811380A CN103811380A (en) | 2014-05-21 |
| CN103811380B true CN103811380B (en) | 2017-12-22 |
Family
ID=50707970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310541006.5A Expired - Fee Related CN103811380B (en) | 2012-11-06 | 2013-11-05 | Batch-type substrate-processing apparatus |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6290585B2 (en) |
| KR (1) | KR101990533B1 (en) |
| CN (1) | CN103811380B (en) |
| TW (1) | TWI612610B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102000204B1 (en) * | 2018-09-20 | 2019-07-16 | 주식회사 와이컴 | Multi Stage Support and Batch Type Apparatus for Treatment |
| US20200373190A1 (en) * | 2019-05-20 | 2020-11-26 | Applied Materials, Inc. | Process kit enclosure system |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3280437B2 (en) * | 1992-11-27 | 2002-05-13 | 東芝セラミックス株式会社 | Vertical boat |
| JPH11307608A (en) * | 1998-04-16 | 1999-11-05 | Nissin Electric Co Ltd | Processed piece carrier system |
| JP3487497B2 (en) | 1998-06-24 | 2004-01-19 | 岩手東芝エレクトロニクス株式会社 | Object to be processed accommodation jig and heat treatment apparatus using the same |
| JP2000232151A (en) * | 1999-02-10 | 2000-08-22 | Hitachi Ltd | Wafer boat for vertical furnace |
| KR20000073974A (en) * | 1999-05-17 | 2000-12-05 | 윤종용 | Wafer boat |
| US6287112B1 (en) * | 2000-03-30 | 2001-09-11 | Asm International, N.V. | Wafer boat |
| JP2001313268A (en) * | 2000-04-28 | 2001-11-09 | Asahi Glass Co Ltd | Heat treating boat |
| JP2002324830A (en) * | 2001-02-20 | 2002-11-08 | Mitsubishi Electric Corp | Holding tool for substrate heat treatment, substrate heat treating equipment method for manufacturing semiconductor device, method for manufacturing the holding tool for substrate heat treatment and method for deciding structure of the holding tool for substrate heat treatment |
| JP4370822B2 (en) | 2003-06-20 | 2009-11-25 | 株式会社Ｓｕｍｃｏ | Semiconductor substrate heat treatment boat and heat treatment method |
| US20070275570A1 (en) * | 2004-01-20 | 2007-11-29 | Hitachi Kokusai Electric Inc. | Heat Treatment Apparatus |
| JP4317871B2 (en) | 2004-04-21 | 2009-08-19 | 株式会社日立国際電気 | Heat treatment equipment |
| JP4833074B2 (en) * | 2004-09-30 | 2011-12-07 | 株式会社日立国際電気 | Heat treatment apparatus, heat treatment method, substrate manufacturing method, and semiconductor device manufacturing method |
| KR100657502B1 (en) | 2005-04-25 | 2006-12-20 | 주식회사 테라세미콘 | Wafer-Holder Manufaturing Method and Wafer-Holder-Boat for Semiconductor |
| TW201115675A (en) * | 2005-04-25 | 2011-05-01 | Terasemicon Co Ltd | Manufacturing method for the holder of the batch type boat |
| KR100772462B1 (en) * | 2005-12-08 | 2007-11-01 | 주식회사 테라세미콘 | Wafer Manufaturing Method and Wafer Manufaturing Apparatus |
| US7713355B2 (en) * | 2005-05-03 | 2010-05-11 | Integrated Materials, Incorporated | Silicon shelf towers |
| JP4854427B2 (en) * | 2006-08-11 | 2012-01-18 | 東京エレクトロン株式会社 | Substrate transfer device, substrate processing device, substrate transfer arm |
| US7661544B2 (en) * | 2007-02-01 | 2010-02-16 | Tokyo Electron Limited | Semiconductor wafer boat for batch processing |
| JP4313401B2 (en) * | 2007-04-24 | 2009-08-12 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus and substrate transfer method |
| JP4998246B2 (en) * | 2007-12-19 | 2012-08-15 | 信越半導体株式会社 | Semiconductor substrate support jig and manufacturing method thereof. |
| JP4985449B2 (en) * | 2008-02-13 | 2012-07-25 | 東京エレクトロン株式会社 | Deposition equipment |
| KR101039152B1 (en) | 2009-02-19 | 2011-06-07 | 주식회사 테라세미콘 | Boat |
| JP5543813B2 (en) * | 2010-03-23 | 2014-07-09 | 日東電工株式会社 | Work transfer method and work transfer device |
| JP5548163B2 (en) * | 2010-09-14 | 2014-07-16 | 株式会社日立国際電気 | Substrate transport mechanism, substrate processing apparatus, and semiconductor device manufacturing method |
-
2012
- 2012-11-06 KR KR1020120125073A patent/KR101990533B1/en active IP Right Grant
-
2013
- 2013-10-22 JP JP2013219183A patent/JP6290585B2/en active Active
- 2013-10-23 TW TW102138236A patent/TWI612610B/en active
- 2013-11-05 CN CN201310541006.5A patent/CN103811380B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR101990533B1 (en) | 2019-09-30 |
| JP6290585B2 (en) | 2018-03-07 |
| JP2014093522A (en) | 2014-05-19 |
| KR20140058270A (en) | 2014-05-14 |
| CN103811380A (en) | 2014-05-21 |
| TWI612610B (en) | 2018-01-21 |
| TW201430992A (en) | 2014-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8021968B2 (en) | Susceptor and method for manufacturing silicon epitaxial wafer | |
| CN1682360B (en) | Heat treatment device, process for fabricating semiconductor device and process for producing substrate | |
| US20050092439A1 (en) | Low/high temperature substrate holder to reduce edge rolloff and backside damage | |
| US9607832B2 (en) | Epitaxial wafer manufacturing device and manufacturing method | |
| US20090139448A1 (en) | Vapor phase growth apparatus ans vapor phase growth method | |
| KR20030063448A (en) | Susceptor pocket profile to improve process performance | |
| EP3396703B1 (en) | Wafer supporting mechanism, chemical vapor deposition apparatus, and epitaxial wafer manufacturing method | |
| KR20100102131A (en) | Susceptor for epitaxial growth | |
| CN104952774A (en) | Boat | |
| US8216920B2 (en) | Silicon epitaxial wafer and manufacturing method thereof | |
| KR20170037912A (en) | Wafer susceptor with improved thermal characteristics | |
| CN103811380B (en) | Batch-type substrate-processing apparatus | |
| JP3900154B2 (en) | Semiconductor wafer manufacturing method and susceptor used therefor | |
| JP7176489B2 (en) | Silicon carbide epitaxial growth apparatus and silicon carbide epitaxial wafer manufacturing method | |
| JP7049818B2 (en) | Film forming equipment | |
| KR101436059B1 (en) | Apparatus and method for manufacturing semiconductor | |
| JP2012134332A (en) | Substrate processing method and substrate processing device | |
| JP5010884B2 (en) | Substrate processing apparatus, substrate transport method, and semiconductor integrated circuit device manufacturing method | |
| JP2011176320A (en) | Substrate processing apparatus | |
| JPS62177912A (en) | Vapor growth device | |
| JP2008078459A (en) | Substrate treating device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Gyeonggi Do, South Korea Patentee after: (yuan) iron and steel thermal semiconductor Address before: Gyeonggi Do, South Korea Patentee before: TERASEMICON Corp. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190404 Address after: South Korea Gyeonggi Do Ping Ze Zhenwei Zhenwei group produced 75 road surface Patentee after: WONIK IPS Co.,Ltd. Address before: Gyeonggi Do, South Korea Patentee before: (yuan) iron and steel thermal semiconductor |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20171222 Termination date: 20211105 |