CN103811252A - Extraction inhibition electrode used for ion extraction - Google Patents
Extraction inhibition electrode used for ion extraction Download PDFInfo
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- CN103811252A CN103811252A CN201210444831.9A CN201210444831A CN103811252A CN 103811252 A CN103811252 A CN 103811252A CN 201210444831 A CN201210444831 A CN 201210444831A CN 103811252 A CN103811252 A CN 103811252A
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- electrode
- ion
- extraction
- connecting plate
- ground electrode
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Abstract
The invention discloses an extraction inhibition electrode device used for ion extraction in an ion implanter system. The device is a device which inhibits secondary electrons generated due to ions hitting a ground electrode and a tube wall behind the ground electrode from being inversely accelerated and entering an ion source discharge chamber when a beam is extracted. The device comprises a counter bore (1), a beam extraction outlet (2), a high purity graphite electrode (3), a threaded hole (4), and an electrode connecting plate (5), and a specification gives a detailed description of the working principle of the device, and provides a specific implementation scheme. The invention relates to an ion implantation device, and belongs to the field of semiconductor manufacture.
Description
Technical field
The present invention relates to draw and suppress electrode equipment in a kind of semiconductor manufacturing equipment ion implantor extraction electrode, it is during for the work of extraction electrode in the past, draw ion and get to the secondary electron producing on ground electrode and later tube wall by anti-impact of accelerating to enter ion source discharge chamber and it is caused, can restrain reliably the bounce-back of secondary electron, and be that effective guarantee is made in purity and the focusing of drawing ion.
Technical background
Ion implantor is the exemplary apparatus of semiconductor technology intermediate ion doping, and ion source produces the ion beam that needs doping, and ion beam passes through quality analysis, correction, acceleration again, is transferred to the silicon chip surface in target chamber end process cavity.
1. in the ion implantation technology of wafer, the stability of line and purity requirement thereof are more and more high.And this requirement directly affects the implantation quality of semiconductor applications entirety, be mainly reflected in the following aspects:
2. in the injection of line, ion dose is injected on wafer uniformly.The unsteadiness of injecting line can cause the failure of injection.
3. for injection technology, the ion implantor of low-yield large speed stream is the direction of development, and the uniformity requirement of line is also more and more higher.
4. in Implantation, when requiring beam homogeneity, also require to strengthen the control of line, intercept foreign ion, thereby prevent the failure causing because of energy contamination.
5. along with the more and more miniaturization of semiconductor integrated circuit manufacturing process, also just more and more higher to the performance requirement of semiconductor manufacturing facility, now require to there is higher beam purity, thereby avoid the damage in the time that equipment is worked, parts being caused.
Summary of the invention
The invention discloses and a kind ofly in ion implantation machine system draw inhibition electrode assembly for Ion Extraction, it is during for the work of extraction electrode in the past, draw ion and get to the secondary electron producing on ground electrode and later tube wall by anti-impact of accelerating to enter ion source discharge chamber and it is caused, can restrain reliably the bounce-back of secondary electron, and be that effective guarantee is made in purity and the focusing of drawing ion.The present invention realizes by following scheme:
1. be applied to drawing of Ion Extraction and suppress the device of electrode, comprising: counterbore (1), draw bundle outlet (2), high pure graphite electrode (3), screwed hole (4), electrode connecting plate (5).
2. the device that suppresses electrode of drawing that is applied to Ion Extraction, the counterbore (1) of high pure graphite electrode (3) is connected and is played fixing effect by screw with the screwed hole (4) of electrode connecting plate (5).Drawing bundle outlet (2) provides ion motion passage, screened go out ion will get to and suppress on electrode, suppressed electrode absorbs, and has improved like this purity of line, guarantees the precision of measurement line.
3. the advantage that this slipper seal plate presents is embodied in:
I. simple and reliable, be easy to processing and manufacturing;
II. improve the purity of line, guarantee to measure the precision of line;
III. there is certain focussing force.
Accompanying drawing explanation
Fig. 1 is for drawing inhibition electrode
Fig. 2 suppresses the electrode body that is linked and packed for drawing
Embodiment
Below in conjunction with attached Fig. 1 and 2 specific embodiment, the invention will be described further, but not as a limitation of the invention.
Draw inhibition electrode and electrode connecting plate not as shown in Figure 1 and Figure 2.By screw fixed electrode connecting plate (5), the counterbore (1) of high pure graphite electrode (3) and the screwed hole (4) of electrode connecting plate (5) are fixed high-purity electrode (3) jointly, guarantee to draw that to suppress electrode firm.Draw bundle outlet (2) ion motion passage is provided.
Specific embodiment of the present invention elaborates content of the present invention.For persons skilled in the art, any apparent change of without departing from the premise in the spirit of the present invention it being done, all forms the infringement to patent of the present invention, will bear corresponding legal liabilities.
Claims (2)
1. be applied to drawing of Ion Extraction and suppress the device of electrode, comprising: counterbore (1), draw bundle outlet (2), high pure graphite electrode (3), screwed hole (4), electrode connecting plate (5) is characterized in that: the counterbore (1) of described high pure graphite electrode (3) is connected and is played fixing effect by screw with the screwed hole (4) of electrode connecting plate (5).
2. provide ion motion passage as drawn as described in claim 1 bundle outlet (2) in claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210444831.9A CN103811252A (en) | 2012-11-09 | 2012-11-09 | Extraction inhibition electrode used for ion extraction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210444831.9A CN103811252A (en) | 2012-11-09 | 2012-11-09 | Extraction inhibition electrode used for ion extraction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103811252A true CN103811252A (en) | 2014-05-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210444831.9A Pending CN103811252A (en) | 2012-11-09 | 2012-11-09 | Extraction inhibition electrode used for ion extraction |
Country Status (1)
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| CN (1) | CN103811252A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910666A (en) * | 2015-12-22 | 2017-06-30 | 三菱电机株式会社 | Ion implantation apparatus |
Citations (8)
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|---|---|---|---|---|
| CN1210225A (en) * | 1997-08-30 | 1999-03-10 | 大宇电子株式会社 | Microwave oven equipped with microwave generating apparatus designed to reduce secondary electron emission |
| JP2000049553A (en) * | 1998-07-31 | 2000-02-18 | Kinseki Ltd | Manufacture of surface acoustic wave device |
| US20040227106A1 (en) * | 2003-05-13 | 2004-11-18 | Halling Alfred M. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
| CN2788347Y (en) * | 2005-04-22 | 2006-06-14 | 北京中科信电子装备有限公司 | Static ion accelerating tube against X ray |
| CN101097830A (en) * | 2006-06-28 | 2008-01-02 | 日新意旺机械股份有限公司 | Ion beam irradiation device |
| CN101901734A (en) * | 2010-04-07 | 2010-12-01 | 胡新平 | Multimode ion implantation machine system and implantation regulating method |
| CN102347193A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | Optimization algorithm for fast beam adjustment of large-angle ion implanter |
| CN102623288A (en) * | 2011-01-27 | 2012-08-01 | 无锡华润上华半导体有限公司 | Secondary electron device and ion implanter machine using the same |
-
2012
- 2012-11-09 CN CN201210444831.9A patent/CN103811252A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1210225A (en) * | 1997-08-30 | 1999-03-10 | 大宇电子株式会社 | Microwave oven equipped with microwave generating apparatus designed to reduce secondary electron emission |
| JP2000049553A (en) * | 1998-07-31 | 2000-02-18 | Kinseki Ltd | Manufacture of surface acoustic wave device |
| US20040227106A1 (en) * | 2003-05-13 | 2004-11-18 | Halling Alfred M. | System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway |
| CN2788347Y (en) * | 2005-04-22 | 2006-06-14 | 北京中科信电子装备有限公司 | Static ion accelerating tube against X ray |
| CN101097830A (en) * | 2006-06-28 | 2008-01-02 | 日新意旺机械股份有限公司 | Ion beam irradiation device |
| CN101901734A (en) * | 2010-04-07 | 2010-12-01 | 胡新平 | Multimode ion implantation machine system and implantation regulating method |
| CN102347193A (en) * | 2010-08-02 | 2012-02-08 | 北京中科信电子装备有限公司 | Optimization algorithm for fast beam adjustment of large-angle ion implanter |
| CN102623288A (en) * | 2011-01-27 | 2012-08-01 | 无锡华润上华半导体有限公司 | Secondary electron device and ion implanter machine using the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106910666A (en) * | 2015-12-22 | 2017-06-30 | 三菱电机株式会社 | Ion implantation apparatus |
| CN106910666B (en) * | 2015-12-22 | 2019-08-27 | 三菱电机株式会社 | Ion implantation apparatus |
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Application publication date: 20140521 |
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| RJ01 | Rejection of invention patent application after publication |