CN103803962A - Scandium-doped bismuth ferrite piezoelectric ceramic material and preparation method thereof - Google Patents
Scandium-doped bismuth ferrite piezoelectric ceramic material and preparation method thereof Download PDFInfo
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- CN103803962A CN103803962A CN201410073945.6A CN201410073945A CN103803962A CN 103803962 A CN103803962 A CN 103803962A CN 201410073945 A CN201410073945 A CN 201410073945A CN 103803962 A CN103803962 A CN 103803962A
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- bismuth ferrite
- doped bismuth
- scandium
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Abstract
The invention discloses a scandium-doped bismuth ferrite piezoelectric ceramic material and a preparation method thereof. The ceramic material is a piezoelectric with the molecular formula of Bi[1-x]Scx FeO3, wherein x is 0.01-0.8, the thickness of the ceramic material is 0.1-3mm, the curie temperature is 400-800DEG C, the piezoelectric constant d33 is 50-200pC/N, the residual electrical polarization intensity is 10-40muC/cm<2>, the resistivity is reduced along with the rise of temperature ranging 25DEG C to 300DEG C, and the resistivity changes from 105ohm.m to 1011ohm.m. The scandium-doped bismuth ferrite piezoelectric ceramic can be obtained by means of blending raw materials according to stoichiometric ration and sintering. The material has high resistivity and high curie temperature, can be stably used at high temperature, and has tremendous practical application values in the fields of energy transducers, drivers, sensors and the like.
Description
Technical field
The invention belongs to piezoelectric field, relate to a kind of scandium doped bismuth ferrite stupalith and preparation method thereof.
Background technology
The mechanism of piezoelectric effect is: the crystal symmetry with piezoelectricity is lower, in the time being subject to External Force Acting generation deformation, in structure cell, the relative displacement of negative ions no longer overlaps positive and negative charge center, cause crystal generation macroscopic polarization, and plane of crystal surface density of charge equals the projection of polarizability on surface normal, so piezoelectric is stressed while acting on deformation, corresponding end face there will be heterocharge.Otherwise, when polarization occurs piezoelectric in electric field, can cause material deformation because of the displacement of charge-site.Utilize these characteristics of piezoelectric can realize the mutual conversion of mechanical vibration (sound wave) and alternating-current.Thereby the application of piezoelectric in Electronics Science and Technology is very extensive, become the critical function material in national defense industry, civilian industry and daily life, can be used in sensor element for example seismic sensor, power, velocity survey element and electroacoustic transducer etc.
Pb-based lanthanumdoped zirconate titanates (Pb (Zr
xti
1-x) O
3, x is 0-1) and pottery has good piezoelectric property, but its Curie temperature is generally less than 400 ℃, is restricted in the application of high-temperature field.Lead titanate (PbTiO
3) ceramic Curie temperature is about 490 ℃, and piezoelectric and dielectric properties is all excellent, but there is the shortcoming such as sintering difficulty, the large and difficult polarization of coercive field.Lead element in above two class piezoelectric ceramics can cause environmental pollution.Bismuth ferrite (BiFeO
3) pottery has good piezoelectricity, and the bismuth ferrite of the doping such as lanthanum, dysprosium or manganese has been reported, but conventionally more than 200 ℃ time, its resistivity declines to a great extent, and causes piezoelectricity variation, affects its high temperature application.
Summary of the invention
The object of this invention is to provide a kind of piezoceramic material that can use and preparation method thereof under hot environment.Utilize scandium doping, can obtain there is high resistivity, the scandium doped bismuth ferrite piezoceramic material of the good and high-curie temperature of piezoelectric property.
The technical scheme that realizes the object of the invention is: a kind of scandium doped bismuth ferrite material, and its stupalith is piezoelectrics, molecular formula is Bi
1-xsc
xfeO
3, wherein x is 0.01-0.8.
Described stupalith thickness is 0.1-3mm, and Curie temperature is 400-800 ℃, piezoelectric constant d
33for 50-200pC/N, residual electric polarization is 10-40 μ C/cm
2, in 25-300 ℃ of temperature range, resistivity is along with temperature raises and reduces, and resistivity is 10
5-10
11in Ω m, change.
25 ℃ time, resistivity is 10
8-10
11Ω m, 150 ℃ time, resistivity is 10
6-10
10Ω m, 300 ℃ time, resistivity is 10
5-10
9Ω m.
A preparation method for scandium doped bismuth ferrite piezoceramic material, comprises the following steps:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
1-xsc
xfeO
3the metering of each element chemistry than weighing oxide compound, wherein, in compound, x is 0.01-0.8, and the oxide compound weighing up is put into ball grinder, adds ball milling after alcohol, and material good ball milling is dried, and under certain pressure, powder compression is become to ceramic plate;
(2) after being put into process furnace sintering, pottery is cooled to room temperature.
Ratio of grinding media to material described in step (1) is 3:1, and described Ball-milling Time is 5-12 hour, and described compressing tablet pressure is 1-20MPa.
In step (2), described sintering temperature is 800-950 ℃, and sintering time is 0.1-3 hour.
The present invention successfully adopts by the mode of stoichiometric ratio proportioning raw material and sintering, and the bismuth position by scandium element doping to bismuth ferrite obtains composition and is different from other existing piezoelectrics, new ceramic material that Curie temperature is high.Scandium doped bismuth ferrite piezoceramic material provided by the invention, its high-curie temperature and piezoelectric constant stabilising characteristic, can be widely used in transverter, driving mechanism and sensor field.
Accompanying drawing explanation
Fig. 1 is Bi
0.99sc
0.01feO
3the X ray diffracting spectrum of pottery.
Fig. 2 is Bi
0.9sc
0.1feO
3the X ray diffracting spectrum of pottery.
Fig. 3 is Bi
0.8sc
0.2feO
3the X ray diffracting spectrum of pottery.
Fig. 4 is Bi
0.2sc
0.8feO
3the X ray diffracting spectrum of pottery.
Embodiment
Example 1:
Choose x=0.01, the thick Bi of preparation 0.1mm
0.99sc
0.01feO
3pottery:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
0.99sc
0.01feO
3the metering of each element chemistry than weighing oxide compound, the oxide compound weighing up is put into ball grinder, add ball milling pearl by ratio of grinding media to material 3:1, add after alcohol ball milling 12 hours, material good ball milling is dried, under the pressure of 1MPa by powder pressing forming;
(2) pottery is put into 800 ℃ of process furnace sintering and be cooled to room temperature after 0.1 hour;
(3) to prepared Bi
0.99sc
0.01feO
3pottery carries out X-ray diffraction test.X ray diffracting spectrum as shown in Figure 1, illustrates without dephasign and exists.
(4) adopt electric impedance analyzer, recording ceramic Curie temperature is 800 ℃.Adopt piezoelectric constant survey meter to record ceramic piezoelectric constant d
33for 50pC/N.Adopt ferroelectric tester, recording ceramic residual electric polarization is 40 μ C/cm
2.Adopt four point probe tester, record ceramic resistor rate in 25-300 ℃ of temperature range, along with temperature raises and reduces, ceramic 25 ℃ time, resistivity is 10
8Ω m, 150 ℃ time, resistivity is 10
6Ω m, 300 ℃ time, resistivity is 10
5Ω m.
Example 2:
Choose x=0.1, the thick Bi of preparation 1mm
0.9sc
0.1feO
3pottery:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
0.9sc
0.1feO
3the metering of each element chemistry than weighing oxide compound, the oxide compound weighing up is put into ball grinder, add ball milling pearl by ratio of grinding media to material 3:1, add after alcohol ball milling 8 hours, material good ball milling is dried, under the pressure of 10MPa by powder pressing forming;
(2) pottery is put into 850 ℃ of process furnace sintering and be cooled to room temperature after 0.5 hour;
(3) to prepared Bi
0.9sc
0.1feO
3pottery carries out X-ray diffraction test.X ray diffracting spectrum as shown in Figure 2, illustrates without dephasign and exists.
(4) adopt electric impedance analyzer, recording ceramic Curie temperature is 700 ℃.Adopt piezoelectric constant survey meter to record ceramic piezoelectric constant d
33for 80pC/N.Adopt ferroelectric tester, recording ceramic residual electric polarization is 30 μ C/cm
2.Adopt four point probe tester, record ceramic resistor rate in 25-300 ℃ of temperature range, along with temperature raises and reduces, ceramic 25 ℃ time, resistivity is 7 × 10
8Ω m, 150 ℃ time, resistivity is 10
7Ω m, 300 ℃ time, resistivity is 10
6Ω m.
Example 3:
Choose x=0.2, the thick Bi of preparation 2mm
0.8sc
0.2feO
3pottery:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
0.8sc
0.2feO
3the metering of each element chemistry than weighing oxide compound, the oxide compound weighing up is put into ball grinder, add ball milling pearl by ratio of grinding media to material 3:1, add after alcohol ball milling 10 hours, material good ball milling is dried, under the pressure of 15MPa by powder pressing forming;
(2) pottery is put into 900 ℃ of process furnace sintering and be cooled to room temperature after 1 hour;
(3) to prepared Bi
0.8sc
0.2feO
3pottery carries out X-ray diffraction test.X ray diffracting spectrum as shown in Figure 3, illustrates without dephasign and exists.
(4) adopt electric impedance analyzer, recording ceramic Curie temperature is 600 ℃.Adopt piezoelectric constant survey meter to record ceramic piezoelectric constant d
33for 150pC/N.Adopt ferroelectric tester, recording ceramic residual electric polarization is 20 μ C/cm
2.Adopt four point probe tester, record ceramic resistor rate in 25-300 ℃ of temperature range, along with temperature raises and reduces, ceramic 25 ℃ time, resistivity is 10
9Ω m, 150 ℃ time, resistivity is 6 × 10
8Ω m, 300 ℃ time, resistivity is 10
8Ω m.
Example 4:
Choose x=0.8, the thick Bi of preparation 3mm
0.2sc
0.8feO
3pottery:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
0.2sc
0.8feO
3the metering of each element chemistry than weighing oxide compound, the oxide compound weighing up is put into ball grinder, add ball milling pearl by ratio of grinding media to material 3:1, add after alcohol ball milling 5 hours, material good ball milling is dried, under the pressure of 20MPa by powder pressing forming;
(2) pottery is put into 950 ℃ of process furnace sintering and be cooled to room temperature after 3 hours;
(3) to prepared Bi
0.2sc
0.8feO
3pottery carries out X-ray diffraction test.X ray diffracting spectrum as shown in Figure 4, illustrates without dephasign and exists.
(4) adopt electric impedance analyzer, recording ceramic Curie temperature is 400 ℃.Adopt piezoelectric constant survey meter to record ceramic piezoelectric constant d
33for 200pC/N.Adopt ferroelectric tester, recording ceramic residual electric polarization is 10 μ C/cm
2.Adopt four point probe tester, record ceramic resistor rate in 25-300 ℃ of temperature range, along with temperature raises and reduces, ceramic 25 ℃ time, resistivity is 10
11Ω m, 150 ℃ time, resistivity is 10
10Ω m, 300 ℃ time, resistivity is 10
9Ω m.
Comparative example:
The thick BiFeO of preparation 0.1mm
3pottery:
(1) proportioning of raw material and compression molding: with Bi
2o
3and Fe
2o
3for raw material, by compd B iFeO
3the metering of each element chemistry than weighing oxide compound, the oxide compound weighing up is put into ball grinder, add ball milling pearl by ratio of grinding media to material 3:1, add after alcohol ball milling 12 hours, material good ball milling is dried, under the pressure of 1MPa by powder pressing forming;
(2) pottery is put into 800 ℃ of process furnace sintering and be cooled to room temperature after 0.1 hour;
(3) adopt electric impedance analyzer, recording ceramic Curie temperature is 820 ℃.Adopt piezoelectric constant survey meter to record ceramic piezoelectric constant d
33for 38pC/N.Adopt ferroelectric tester, recording ceramic residual electric polarization is 35 μ C/cm
2.Adopt four point probe tester, while recording ceramic 25 ℃, resistivity is 10
7Ω m, 150 ℃ time, resistivity is 10
5Ω m, 300 ℃ time, resistivity is 10
4Ω m.300 ℃ time, the resistivity of material is less than normal, causes the ferroelectric properties of material at this temperature not good.
In a word, than BiFeO
3pottery, Bi
1-xsc
xfeO
3(x is 0.01-0.8) pottery not only has large resistivity at 25 ℃, and all has BiFeO in the time of 150 ℃ and 300 ℃ of high temperature
3the not available high resistivity of pottery, thereby can keep good piezoelectricity, can be room temperature to 300 ℃ stable use.
Claims (7)
1. a scandium doped bismuth ferrite stupalith, is characterized in that described stupalith is piezoelectrics, and molecular formula is Bi
1-xsc
xfeO
3, wherein x is 0.01-0.8.
2. scandium doped bismuth ferrite piezoceramic material according to claim 1, is characterized in that described piezoceramic material thickness is 0.1-3mm, and Curie temperature is 400-800 ℃, piezoelectric constant d
33for 50-200pC/N, residual electric polarization is 10-40 μ C/cm
2, in 25-300 ℃ of temperature range, resistivity is along with temperature raises and reduces, and resistivity is 10
5-10
11in Ω m, change.
3. scandium doped bismuth ferrite piezoceramic material according to claim 2, while it is characterized in that 25 ℃, resistivity is 10
8-10
11Ω m, 150 ℃ time, resistivity is 10
6-10
10Ω m, 300 ℃ time, resistivity is 10
5-10
9Ω m.
4. scandium doped bismuth ferrite stupalith according to claim 1 and 2, is characterized in that described stupalith prepared by following steps:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
1-xsc
xfeO
3the metering of each element chemistry than weighing oxide compound, wherein, in compound, x is 0.01-0.8, and the oxide compound weighing up is put into ball grinder, adds ball milling after alcohol, material good ball milling is dried to compression molding;
(2) after being put into process furnace sintering, pottery is cooled to room temperature.
5. a preparation method for scandium doped bismuth ferrite piezoceramic material, is characterized in that comprising the following steps:
(1) proportioning of raw material and compression molding: with Bi
2o
3, Fe
2o
3and Sc
2o
3for raw material, by compd B i
1-xsc
xfeO
3the metering of each element chemistry than weighing oxide compound, wherein, in compound, x is 0.01-0.8, and the oxide compound weighing up is put into ball grinder, adds ball milling after alcohol, material good ball milling is dried to compression molding;
(2) after being put into process furnace sintering, pottery is cooled to room temperature.
6. the preparation method of scandium doped bismuth ferrite piezoceramic material according to claim 5, is characterized in that the ratio of grinding media to material described in step 1 is 3:1, and described Ball-milling Time is 5-12 hour.
7. the preparation method of scandium doped bismuth ferrite piezoceramic material according to claim 5, is characterized in that the sintering temperature described in step 2 is 800-950 ℃, and sintering time is 0.1-3 hour.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105503164A (en) * | 2014-10-16 | 2016-04-20 | 桂林电子科技大学 | High insulation bismuth ferrite based high temperature piezoelectric glass ceramic composite material and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157682A (en) * | 2010-11-25 | 2011-08-17 | 南京理工大学 | One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode |
| CN102249659A (en) * | 2011-06-16 | 2011-11-23 | 桂林电子科技大学 | Bismuth ferrite-based leadless piezoelectric ceramic with high Curie temperature and preparation method thereof |
-
2014
- 2014-03-03 CN CN201410073945.6A patent/CN103803962A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102157682A (en) * | 2010-11-25 | 2011-08-17 | 南京理工大学 | One-phase ferroelectric film and preparing method thereof as well as effective resistance regulation mode |
| CN102249659A (en) * | 2011-06-16 | 2011-11-23 | 桂林电子科技大学 | Bismuth ferrite-based leadless piezoelectric ceramic with high Curie temperature and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105503164A (en) * | 2014-10-16 | 2016-04-20 | 桂林电子科技大学 | High insulation bismuth ferrite based high temperature piezoelectric glass ceramic composite material and preparation method thereof |
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Application publication date: 20140521 |