CN103801531A - Cleaning process for ITO - Google Patents
Cleaning process for ITO Download PDFInfo
- Publication number
- CN103801531A CN103801531A CN201210456780.1A CN201210456780A CN103801531A CN 103801531 A CN103801531 A CN 103801531A CN 201210456780 A CN201210456780 A CN 201210456780A CN 103801531 A CN103801531 A CN 103801531A
- Authority
- CN
- China
- Prior art keywords
- basket
- chip
- cleaning process
- ito
- etching liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
The invention relates to a cleaning process for ITO. The cleaning process is characterized in that an etching liquid cleaning process is added before electrode evaporation plating; the cleaning process comprises the steps: putting a chip to be cleaned into a chip basket; putting the basket into a tank which contains buffer etching liquid and soaking the basket for 15 seconds; taking out the basket, put the basket into a tank which contains pure water and soaking the basket for 15 seconds; after soaking, taking out the basket, putting the basket into a spin dryer for drying. According to the cleaning process for ITO, disclosed by the invention, the etching liquid cleaning process is added before the electrode evaporation plating, contamination on the chip to be photoetched can be cleaned, the cleanliness of the surface of the chip can be guaranteed, the electrode firmness is increased, the phenomenon of electrode falling is reduced, and the yield of the chip is improved.
Description
Technical field
The present invention relates to the cleaning of a kind of ITO, belong to LED production field.
Background technology
LED is one of illuminations of energy-conserving and environment-protective the most in current lighting field, but because LED industry at home is just risen, technology is not very ripe, especially power down utmost point phenomenon is even more serious, become one of bottleneck of restriction LED yield raising, the main cause that power down utmost point phenomenon occurs is that ITO surface cleanness is not high, how to improve the cleannes on ITO surface, is one of main bugbear facing in the production of current industry.
Summary of the invention
The present invention is directed to the deficiency that prior art exists, the cleaning of a kind of ITO is provided.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: the cleaning of a kind of ITO, it is characterized in that, and before electrode evaporation, increase etching liquid cleaning, described cleaning step is as follows: first chip to be cleaned is put into the chip gaily decorated basket; By the gaily decorated basket put into hold buffering etching liquid groove soak 15 seconds; Take out the gaily decorated basket, put it in the groove that is contained with pure water and soak 15 minutes; After immersion completes, take out the gaily decorated basket, put it in drier and dry.
The invention has the beneficial effects as follows: the present invention by increasing etching liquid cleaning before electrode evaporation, can will treat that the pollutant on the chip of photoetching washes, thereby guarantee the cleannes of chip surface, increase the fastness of electrode, reduce the phenomenon of the power down utmost point, improved the yield of chip.
The specific embodiment
Below principle of the present invention and feature are described, example, only for explaining the present invention, is not intended to limit scope of the present invention.
A cleaning of ITO, is characterized in that, before electrode evaporation, increases etching liquid cleaning, and described cleaning step is as follows: first chip to be cleaned is put into the chip gaily decorated basket; By the gaily decorated basket put into hold buffering etching liquid groove soak 15 seconds; Take out the gaily decorated basket, put it in the groove that is contained with pure water and soak 15 minutes; After immersion completes, take out the gaily decorated basket, put it in drier and dry.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (1)
1. a cleaning of ITO, is characterized in that, before electrode evaporation, increases etching liquid cleaning, and described cleaning step is as follows: first chip to be cleaned is put into the chip gaily decorated basket; By the gaily decorated basket put into hold buffering etching liquid groove soak 15 seconds; Take out the gaily decorated basket, put it in the groove that is contained with pure water and soak 15 minutes; After immersion completes, take out the gaily decorated basket, put it in drier and dry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210456780.1A CN103801531A (en) | 2012-11-15 | 2012-11-15 | Cleaning process for ITO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210456780.1A CN103801531A (en) | 2012-11-15 | 2012-11-15 | Cleaning process for ITO |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103801531A true CN103801531A (en) | 2014-05-21 |
Family
ID=50699195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210456780.1A Pending CN103801531A (en) | 2012-11-15 | 2012-11-15 | Cleaning process for ITO |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103801531A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108559661A (en) * | 2018-04-04 | 2018-09-21 | 济南卓微电子有限公司 | A kind of GPP chip cleaning solution and cleaning |
-
2012
- 2012-11-15 CN CN201210456780.1A patent/CN103801531A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108559661A (en) * | 2018-04-04 | 2018-09-21 | 济南卓微电子有限公司 | A kind of GPP chip cleaning solution and cleaning |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103241958B (en) | A kind of engraving method of LCD glass substrate | |
| CN102897759A (en) | Loss-less transfer method for large-size graphene | |
| CN104009122B (en) | The do over again processing method of silicon chip of a kind of serigraphy | |
| CN105140336B (en) | Polycrystalline silicon texturing and cleaning method | |
| CN102074617A (en) | Processing method for screen-printing reworked silicon slice | |
| CN104485388A (en) | Reworking method for defective silicon wafers after PECVD (plasma enhanced chemical vapor deposition) coating of crystal silicon solar cells | |
| CN103887369B (en) | A kind of reworking method of silicon chip film-coated aberration sheet | |
| CN105551942A (en) | Method for cleaning etched deep hole of semiconductor wafer | |
| CN103801531A (en) | Cleaning process for ITO | |
| CN102214726A (en) | Method for treating flocking on surface of solar silicon slice | |
| CN104073883A (en) | Texturing process for polycrystalline silicon solar cell slice | |
| CN104613732A (en) | Before-epitaxy polished section rapid drying method after cleaning | |
| CN102965918B (en) | Cleaning method for silk fabric cultural relic with blood pollution | |
| CN103451605A (en) | ITO (Indium Tin Oxides) coarsening type evaporation method | |
| CN102703254A (en) | Fading lotion | |
| CN102891208B (en) | Solar cell texturing method | |
| CN108766869A (en) | A kind of silicon chip of solar cell slot type cleaning method | |
| CN104384142A (en) | SMD (Surface Mounted Devices) bridge rectifier ultrasonic cleaning process | |
| CN102873042A (en) | Spraying device for removing residual sodium silicate on surfaces of silicon wafers | |
| CN102231404A (en) | Technology for cleaning solar monocrystalline wafer | |
| CN103805978A (en) | Energy-saving black metal processing method | |
| CN203936083U (en) | Semiconductor diffusion quartz ampoule cleaning device | |
| CN103469636B (en) | The aftertreatment technology of terylene kinckebocker yarn | |
| CN103839799A (en) | Wet etching device of single semiconductor substrate | |
| WO2016032856A3 (en) | Sequential etching treatment for solar cell fabrication |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140521 |