CN103797449B - Optical transparent electrode - Google Patents
Optical transparent electrode Download PDFInfo
- Publication number
- CN103797449B CN103797449B CN201280037890.2A CN201280037890A CN103797449B CN 103797449 B CN103797449 B CN 103797449B CN 201280037890 A CN201280037890 A CN 201280037890A CN 103797449 B CN103797449 B CN 103797449B
- Authority
- CN
- China
- Prior art keywords
- grid
- connecting portion
- big
- broken string
- optical clear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical Effects 0.000 title claims abstract description 180
- 239000004020 conductor Substances 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 68
- 230000000875 corresponding Effects 0.000 claims abstract description 6
- 230000002093 peripheral Effects 0.000 claims abstract description 5
- 230000005611 electricity Effects 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 57
- 229910052709 silver Inorganic materials 0.000 description 33
- 239000004332 silver Substances 0.000 description 33
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 19
- -1 silver halide Chemical class 0.000 description 19
- 239000000839 emulsion Substances 0.000 description 16
- 229920005989 resin Polymers 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 210000004940 Nucleus Anatomy 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- GGCZERPQGJTIQP-UHFFFAOYSA-M Sodium 2-anthraquinonesulfonate Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)[O-])=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-M 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive Effects 0.000 description 7
- 210000004027 cells Anatomy 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 108010010803 Gelatin Proteins 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 229920000159 gelatin Polymers 0.000 description 3
- 239000008273 gelatin Substances 0.000 description 3
- 235000019322 gelatine Nutrition 0.000 description 3
- 235000011852 gelatine desserts Nutrition 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000976 ink Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 210000001699 lower leg Anatomy 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- OZAIFHULBGXAKX-UHFFFAOYSA-N precursor Substances N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012153 distilled water Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000003252 repetitive Effects 0.000 description 2
- 150000003378 silver Chemical class 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N Diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229920001225 Polyester resin Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920001721 Polyimide Polymers 0.000 description 1
- 241000352262 Potato virus B Species 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M Silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M Silver chloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N Sodium sulfide Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L Sodium thiosulphate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 241000287181 Sturnus vulgaris Species 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid Chemical class OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005039 chemical industry Methods 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 230000003628 erosive Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002496 poly(ether sulfone) Polymers 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000011528 polyamide (building material) Substances 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920003288 polysulfone Polymers 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000003638 reducing agent Substances 0.000 description 1
- 230000000630 rising Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 230000001235 sensitizing Effects 0.000 description 1
- 231100000202 sensitizing Toxicity 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- IXPWAPCEBHEFOV-UHFFFAOYSA-J sodium tetrachloroaurate Chemical compound [Na+].Cl[Au-](Cl)(Cl)Cl IXPWAPCEBHEFOV-UHFFFAOYSA-J 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-M triacetate(1-) Chemical compound CC(=O)CC(=O)CC([O-])=O ILJSQTXMGCGYMG-UHFFFAOYSA-M 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Abstract
The invention provides the optical transparent electrode that the observability of a kind of electrode pattern is low.Described optical transparent electrode is made by two panels optical clear conductive material is stacked, and described optical clear conductive material has in the one side of optical clear base material: the big grid 11 formed by reticulated conductive portion;With the connecting portion 12 of adjacent big grid 11 electrical connection, described connecting portion 12 at least has 1 and connects grid 16.Described two panels optical clear conductive material is laid out in the way of the center that makes respective connecting portion 12 is unanimous on the whole, and the most a piece of optical clear conductive material has broken string grid 31, in the connecting portion 12 of the described broken string grid 31 optical transparent electrode when corresponding to described stacked making and/or on the position of big grid 11 and connecting portion 12 peripheral part, a part for fine rule breaks and loses electrical conductance.
Description
Technical field
The present invention relates to the optical transparent electrode of touch screen, especially, the present invention relates to can be highly suitable for throwing
Penetrate the optical transparent electrode of capacitive touch screen.
Background technology
At personal digital assistant (PDA), notebook computer, office automation (OA) equipment, armarium or auto navigation
In the electronic equipments such as system, extensively application touch screen is as the display of the said equipment and input medium.
According to the mode of position detection, touch screen has optical profile type, ultrasonic type, condenser type, resistance membrane type etc..Resistance membrane type
Touch screen has following structure: optical clear conductive material and the glass with transparent conductor layer are oppositely arranged across pad, electricity
Stream flows through optical clear conductive material, measures the voltage at the glass with transparent conductor layer.On the other hand, capacitive touch screen
On optical clear base material, there is transparent conductor layer as basic structure, it is characterised in that there is no movable part, due to described
Capacitive touch screen has high durability and high transmission rate, thus is applicable to the most vehicle-mounted purposes etc..
As the transparency electrode (optical clear conductive material) of touch screen purposes, it is generally used for shape on optical clear base material
Become the optical clear conductive material of the optical clear conducting film being made up of ITO.But, the index of refraction of ITO conducting film is big, the table of light
Face reflection is big, causes the problem that total light transmittance is low;Further, since the flexibility of ITO conducting film is low, be full of cracks can be produced when bending,
Cause the problem that resistance raises.
The alternatively optical clear conductive material with optical clear conducting film of ITO, such as, patent documentation 1, patent
Document 2 etc. discloses a kind of semi-additive process forming conductive pattern, and described method forms thin catalyst layer on substrate,
After forming corrosion-resisting pattern on described catalyst layer, utilize galvanoplastic at peristome laminated metal layer against corrosion, resist finally by removing
Erosion layer and the underlying metal protected by this resist layer, form conductive pattern.
Additionally, in recent years, the method proposing to use silver salt diffusion transfer method, described method uses silver halide photography sensitive material
As conductive material precursor.Such as, patent documentation 3, patent documentation 4, patent documentation 5 etc. disclose a kind of formation argent figure
The technology of case, this technology, on conductive material precursor, makes soluble silver salt forming agent and reducing agent mutual in alkaline solution
Effect, forms argent pattern, and wherein, described conductive material precursor has physics on optical clear base material the most successively and shows
Shadow stratum nucleare and silver halide emulsion layer.The pattern obtained by the way can reproduce homogeneous live width, additionally, silver be electric conductivity
High metal, compared with other modes, can obtain high conductivity by thinner live width, therefore, it can obtain total light transmittance
High and that resistance is low optical clear conductive material.Additionally, further, compared with ITO conducting film, obtained by said method
The advantage that optical clear conductive material has flexible height, bending resistance is strong.
Use projected capacitive touch screen, two panels optical clear conductive material is manufactured touch sensing in the way of laminating
Device, wherein, described optical clear conductive material uses multiple electrodes to form pattern at grade.Owing to touch screen is typically
Operator stares screen operation, if there is the position that total light transmittance is different, it may appear that electrode pattern is mapped to eyes (observability
High) problem.The capacitive touch screen optically transparent material by transversely arranged electrode and the optical clear material of longitudinal arrangement electrode
Material is stacked to be used, and therefore, in any case the stacked of upper/lower electrode, the total light transmittance step-down of overlapping part all can occur, there is electricity
Pole pattern Mapping is to the problem of eyes (observability is high).Additionally, in projected capacitive touch screen, use by than relatively large just
The main electrode portion of the compositions such as square or rhombus and the connecting portion of little area electrically connected with adjacent main electrode portion are alternately repeated
The electrode that constitutes of structure, two panels optical clear conductive material is stacked so that the connecting portion of little area is stacked, typically can reduce total
The area at the position that light transmittance is different, but well-content effect can not be obtained, thus to be improved.
For these problems, such as, patent documentation 6 and patent documentation 7 etc. disclose the conduction of middle grid zigzag arrangement
Sheet, wherein, described middle grid has the lattice spacing of n times of sub-box, and described sub-box constitutes the big grid as main electrode.
But, in the case of using this technology, although produce between upper/lower electrode stacked can be improved, but between upper/lower electrode
Apex can produce the point that there is not pattern, and the picture of touch screen produces harsh feeling, remains to be further improved.
Prior art literature
Patent documentation
Patent documentation 1: the open 2007-287994 publication of Japanese patent application
Patent documentation 2: the open 2007-287953 publication of Japanese patent application
Patent documentation 3: the open 2003-77350 publication of Japanese patent application
Patent documentation 4: the open 2005-250169 publication of Japanese patent application
Patent documentation 5: the open 2007-188655 publication of Japanese patent application
Patent documentation 6: the open 2011-129501 publication of Japanese patent application
Patent documentation 7: the open 2011-113149 publication of Japanese patent application
Summary of the invention
The present invention provides a kind of the optical transparent electrode being adapted as projected capacitive touch screen, electrode pattern visible
The optical transparent electrode of property low (user of touch screen is difficult to see that electrode pattern).
The above-mentioned problem of the present invention is realized by following invention:
(1) a kind of optical transparent electrode, described optical transparent electrode is by stacked making of two panels optical clear conductive material
Becoming, described optical clear conductive material has in the one side of optical clear base material: the big grid formed by reticulated conductive portion;Extremely
Having 1 connecting portion connecting grid less, described connecting portion is electrically connected between adjacent big grid;
It is characterized in that, by described two panels optical clear conductive material so that the side that each center of connecting portion is unanimous on the whole
Formula is laid out, and the most a piece of optical clear conductive material has broken string grid, and described broken string grid is corresponding to described folded
In the described connecting portion of optical transparent electrode when putting making and/or described big grid and the position of described connecting portion peripheral part
On, a part for fine rule breaks and loses electrical conductance.
(2) a kind of optical transparent electrode, described optical transparent electrode has on the two sides of optical clear base material: by netted
The big grid that conductive part is formed;At least having 1 connecting portion connecting grid, described connecting portion enters between adjacent big grid
Row electrical connection;
It is characterized in that, the center of the connecting portion that the center of connecting portion one side being had has with another side is with substantially one
The mode caused is configured, and has broken string grid at least one side, described broken string grid in corresponding to described connecting portion and/
Or on the position of described big grid and described connecting portion peripheral part, a part for fine rule breaks and loses electrical conductance.
(3) optical transparent electrode recorded such as above-mentioned (1), it is characterised in that described two panels optical clear conductive material is each
From varying in size of the connecting portion having, and described in the shape broadly similar of connecting portion that varies in size.
(4) optical transparent electrode recorded such as above-mentioned (2), it is characterised in that the one side of described optical clear base material with separately
The varying in size of connecting portion that one side has, and described in the shape broadly similar of connecting portion that varies in size.
(5) optical transparent electrode recorded such as above-mentioned (1) or (2), it is characterised in that described formed by reticulated conductive portion
The difference of the aperture opening ratio of big grid and non-conductive portion is within 1%, and described non-conductive portion has broken string grid, in described broken string grid
A part for fine rule breaks and loses electrical conductance.
(6) optical transparent electrode recorded such as above-mentioned (1) or (2), it is characterised in that described big grid is by multiple Unit Cell
Son is constituted, and the fine rule spacing of described unit lattice is the 80~120% of the fine rule spacing of described broken string grid.
Pass through the present invention, it is possible to provide a kind of optical transparent electrode being adapted as projected capacitive touch screen, electrode figure
The optical transparent electrode of the observability low (user of touch screen is difficult to see that electrode pattern) of case.
Accompanying drawing explanation
[Fig. 1] Fig. 1 (a)~(c) represent that two panels optical clear conductive material is stacked the optical lens of the present invention being made
The figure of the example repeating electrode pattern that prescribed electrode is had.Fig. 1 (a) represents what a piece of optical clear conductive material had
The figure of the example repeating electrode pattern of big grid and connecting portion;Fig. 1 (b) represents that another sheet optical clear conductive material has
The big grid having and the figure of the example repeating electrode pattern of connecting portion;Fig. 1 (c) will be for having Fig. 1 (a) and Fig. 1 (b) institute
Figure after the center of the connecting portion of the optical clear conductive material of the electrode pattern shown is stacked in the way of unanimous on the whole.
[Fig. 2] Fig. 2 (a) is the figure after a part of Fig. 1 (a) being amplified;Fig. 2 (b) is by the part amplification of Fig. 1 (b)
After figure;Fig. 2 (c) be by the center of Fig. 2 (a) and the connecting portion of the electrode pattern of Fig. 2 (b) in the way of unanimous on the whole stacked after
Figure;Fig. 2 (d) is the figure after multiple unit lattice being amplified;Fig. 2 (e) represents the figure of the connecting portion of Fig. 2 (a);Fig. 2 (f) represents
The figure of the connecting portion of Fig. 2 (b);Fig. 2 (g) is the figure after a part of Fig. 1 (c) being amplified.
[Fig. 3] Fig. 3 (a) represents the figure of the example arranging broken string grid in the electrode pattern of Fig. 2 (c);Fig. 3 (b)
Represent the figure of the example that broken string grid is set in the electrode pattern of Fig. 2 (a);Fig. 3 (c) represents and obtains Fig. 3's (a)
Electrode pattern, by the figure of an example of 2 molecular electrode patterns of big lattice;Fig. 3 (d) represents the electrode figure at Fig. 2 (a)
Case arranges the figure of other examples of broken string grid;Fig. 3 (e) expression arranges the one of broken string grid in the electrode pattern of Fig. 2 (b)
The figure of individual example;Fig. 3 (f) represents the electrode pattern obtaining Fig. 3 (a), by other of 2 molecular electrode patterns of big lattice
The figure of example;Fig. 3 (g) represents the figure of other examples arranging broken string grid in the electrode pattern of Fig. 2 (b).
[Fig. 4] Fig. 4 represents the figure after being amplified by the non-conductive portion being made up of broken string grid.
[Fig. 5] Fig. 5 (a) represents the figure of the example arranging adjacent grid at the electrode pattern of Fig. 2 (a);Fig. 5 (b)
Represent the figure of the example that adjacent grid is set at the electrode pattern of Fig. 2 (b);Fig. 5 (c) is by Fig. 5 (a) and Fig. 5 (b)
Figure after the center of the connecting portion of electrode pattern is stacked in the way of unanimous on the whole;The connecting portion of Fig. 5 (a) is taken by Fig. 5 (d) expression
Figure after going out and amplifying.
[Fig. 6] Fig. 6 (a)~(c) are illustrated respectively at the electrode pattern of Fig. 5 (a)~(c) the electrode figure arranging broken string grid
The figure of one example of case.
[Fig. 7] Fig. 7 (a)~(c) represent the 3 of the optical transparent electrode of the present invention with two panels optical clear conductive material
The diagrammatic, cross-sectional figure of individual different instances.
[Fig. 8] Fig. 8 represents an example of the optical transparent electrode of the present invention with a piece of optical clear conductive material
Diagrammatic, cross-sectional figure.
[Fig. 9] Fig. 9 represents the electrode pattern of embodiment 1.Big grid and connecting portion are carried out by Fig. 9 (a) and Fig. 9 (b) expression
The figure of one example of the partial electrode pattern of electrical connection;Fig. 9 (c) and Fig. 9 (d) represents that big grid and connecting portion are electrically connected
The figure of one example of the partial electrode pattern connect;Fig. 9 (e) represents the electrode pattern big grid and connecting portion being electrically connected
Example amplify after figure;Fig. 9 (f) represents an example of the electrode pattern that big grid and connecting portion be not electrically connected
Figure after amplification.
[Figure 10] Figure 10 represents the electrode pattern of embodiment 2.Figure 10 (a) and Figure 10 (b) represents big grid and connecting portion
The figure of one example of the partial electrode pattern being electrically connected;Big grid and connecting portion are electrically connected by Figure 10 (c) expression
The figure of an example of electrode pattern.
[Figure 11] Figure 11 represents the electrode pattern of embodiment 3.Figure 11 (a) and Figure 11 (b) represents big grid and connecting portion
The figure of one example of the partial electrode pattern being electrically connected;Figure 11 (c) and Figure 11 (d) represents that big grid and connecting portion do not enter
The figure of one example of the partial electrode pattern of row electrical connection;Big grid and connecting portion are electrically connected by Figure 11 (e) expression
The figure of one example of electrode pattern;Figure 11 (f) represents of the electrode pattern that big grid and connecting portion be not electrically connected
The figure of example.
[Figure 12] Figure 12 represents the electrode pattern of embodiment 4.Figure 12 (a) and Figure 12 (b) represents big grid and connecting portion
The figure of one example of the partial electrode pattern being electrically connected;Figure 12 (c) and Figure 12 (d) represents that big grid and connecting portion do not enter
The figure of one example of the partial electrode pattern of row electrical connection;Big grid and connecting portion are electrically connected by Figure 12 (e) expression
The figure of one example of electrode pattern;Figure 12 (f) represents of the electrode pattern that big grid and connecting portion be not electrically connected
The figure of example.
[Figure 13] Figure 13 represents the electrode pattern of comparative example 1.Figure 13 (a) and Figure 13 (b) represents big grid and connecting portion
The figure of one example of the partial electrode pattern being electrically connected;Figure 13 (c) and Figure 13 (d) represents that big grid and connecting portion do not enter
The figure of one example of the partial electrode pattern of row electrical connection;Figure 13 (e) represents the electricity that big grid and connecting portion are electrically connected
The figure of one example of pole pattern;Figure 13 (f) represents a reality of the electrode pattern that big grid and connecting portion be not electrically connected
The figure of example.
[Figure 14] Figure 14 represents the electrode pattern of comparative example 2.Figure 14 (a) and Figure 14 (b) represents big grid and connecting portion
The figure of one example of the partial electrode pattern being electrically connected;Figure 14 (c) and Figure 14 (d) represents that big grid and connecting portion do not enter
The figure of one example of the partial electrode pattern of row electrical connection;Big grid and connecting portion are electrically connected by Figure 14 (e) expression
The figure of one example of electrode pattern;Figure 14 (f) represents of the electrode pattern that big grid and connecting portion be not electrically connected
The figure of example.
[Figure 15] Figure 15 is the figure of explanation broken string degree.Figure 15 (a) indicates the figure of the mesh electrode pattern without disconnection portion;Figure
15 (b)~(d) represents the figure of other examples of the mesh electrode pattern that broken string degree is different.
[Figure 16] Figure 16 is the figure of explanation broken string degree.
Detailed description of the invention
First, optical transparent electrode is described in detail.Described optical transparent electrode is by two panels optical clear conduction material
Material is stacked to be made, and described optical clear conductive material has in the one side of optical clear base material: by reticulated conductive portion shape
The big grid become;At least having 1 connecting portion connecting grid, described connecting portion is electrically connected between adjacent big grid
Connect.
Fig. 1 (a)~(c) represent that two panels optical clear conductive material is stacked the optical transparent electrode of the present invention being made
The figure of the example repeating electrode pattern having.Fig. 1 (a) represent big grid that a piece of optical clear conductive material has and
The figure of the example repeating electrode pattern of connecting portion;Fig. 1 (b) represents the big lattice that another sheet optical clear conductive material has
The figure of the example repeating electrode pattern of son and connecting portion;Fig. 1 (c) will be for having the electrode shown in Fig. 1 (a) and Fig. 1 (b)
Figure after the center of the connecting portion of the optical clear conductive material of pattern is stacked in the way of unanimous on the whole.
In Fig. 1 (a), big grid 11 and connecting portion 12 are arranged on optical clear base material 1a, by reticulated conductive portion shape
The big grid 11 become is longitudinally connected by the connecting portion 12 being electrically connected between big grid 11.On the other hand, at Fig. 1 (b)
In, the big grid 11 formed by reticulated conductive portion arranged on optical clear base material 1b is by carrying out electricity between big grid 11
Connecting portion 12 lateral connection connected.Then, the optical transparent electrode of the present invention will be by having big grid 11 He of Fig. 1 (a)
The optical clear conductive material 3a repeating electrode pattern of connecting portion 12 with there is the big grid 11 of Fig. 1 (b) and connecting portion 12
The optical clear conductive material 3b repeating electrode pattern intersects vertically according to electrode pattern direction respectively, makes in respective connecting portion
The heart overlaps in the way of unanimous on the whole, obtains being applicable to the optical transparent electrode of projected capacitive touch screen.Fig. 1 (c) represents to be made
The figure of the state after optical clear conductive material 3a Yu 3b overlapping.
In Fig. 2 (a), (b), big grid 11 is to be arranged in netted by multiple unit lattice 20 and formed.As Unit Cell
The shape of son 20, such as, can be listed below the shape after combination of shapes: equilateral triangle, isosceles triangle, right angled triangle etc.
Triangle;Square, rectangle, rhombus, parallelogram, the tetragon such as trapezoidal;(just) hexagon, (just) octagon, (just)
(just) n limit shapes such as dodecagon, (just) icosagon;Circle;Oval;Star etc..Individually repeat above-mentioned shape additionally, enumerate or incite somebody to action
Various shape of more than two kinds combines.Multiple such unit lattice 20 are combined and forms the big grid formed by reticulated conductive portion
11.Wherein, as the shape of unit lattice 20, it is preferably square or rhombus, additionally, unit lattice 20 is preferably and big grid
The shape that the shape of the outer perimeter section of 11 is substantially similar.Additionally, as described later, substantially similar shape described herein includes leading to
Crossing connecting portion 12 by when being electrically connected between big grid 11, connecting portion 12 puts under the form of big grid 11, along with above-mentioned
Put in, the situation that shape that the shape of the outer perimeter section of big grid 11 is not changed in is similar.
The fine rule width of unit lattice 20 is preferably below 20 μm, more preferably 1~10 μm.Additionally, unit lattice
The fine rule spacing of 20 is preferably below 500 μm, more preferably below 300 μm.Further, unit lattice 20 formed
The aperture opening ratio of big grid 11 is preferably more than 85%, and more preferably 88~97%.For the fine rule width of unit lattice 20,
Such as, when unit lattice is square, the fine rule width of unit lattice 20 is the foursquare of the described unit lattice 20 of composition
The width on limit;For the fine rule spacing of unit lattice 20, such as, when unit lattice is square, the fine rule of unit lattice 20
Spacing is the distance between relative limit and limit.The aperture opening ratio of big grid 11 refers to: remove thin thread part from the gross area (with reference to figure
The symbol 4 of 4) after the ratio of area and the gross area, the described gross area is the gross area of the whole unit lattice constituting big grid
(comprising thin thread part).
Connecting portion 12 in the present invention only can be made up of connection grid 16 as shown in Fig. 2 (a), it is also possible to such as Fig. 2 (b)
Shown in constitute by connecting grid 16 and attached adjacent grid 17 thereof.Fig. 2 (e) is easy for explanation, only by the connecting portion of Fig. 2 (a)
12 figures taken out;Fig. 2 (f) is the figure after only being taken out by the connecting portion 12 of Fig. 2 (b).When shown in Fig. 2 (e), connecting portion
12 are only made up of connection grid 16, but in Fig. 2 (f), connecting portion 12 is connected grid 16 by 1 and 2 adjacent grid 17 are constituted.
In the present invention, the part of such with adjacent big grid 11 electrical connection is but not belonging to the big lattice being made up of unit lattice 20
The part of son 11, belongs to connecting portion 12.
It follows that illustrate connecting grid 16.Connect the shape of grid 16, such as, enumerate following combination of shapes
After shape: equilateral triangle, isosceles triangle, right angled triangle equilateral triangle;Square, rectangle, rhombus, parallel four limits
Shape, the tetragon such as trapezoidal;(just) (just) n limit shape such as hexagon, (just) octagon, (just) dodecagon, (just) icosagon;Circle
Shape, ellipse, star etc..Individually repeat above-mentioned shape additionally, enumerate or various shape of more than two kinds is combined.Wherein, it is preferably
Square or rhombus.Further, connect grid 16 is preferably shaped to the shape substantially similar with above-mentioned big grid 11.
In the present invention, by two panels optical clear conductive material in the way of the center that makes respective connecting portion 12 is unanimous on the whole
It is laid out.In Fig. 2 (a) and Fig. 2 (b), the central point 15 of connecting portion is present in adjacent 2 electrically connected by connecting portion 12
On the central point connecting line 13 of big grid 11 and 11, and the centre of the central point 14 of the most adjacent 2 big grid 11 and 11
Position.Additionally, the central point 15 of connecting portion may also deviate from the centre position of the central point 14 of adjacent 2 big grid 11 and 11, only
Distance to be deviateed is the distance of less than the 20% of an edge lengths of the unit lattice 20 constituting big grid 11, is preferably 10%
Following distance.In the present invention, such state is recited as " unanimous on the whole ".
Connect an edge lengths of grid 16 preferably to constitute n times of an edge lengths of unit lattice 20 of big grid 11 (n is
Integer) 95~105% in the range of.As shown in Fig. 2 (c), when stacked two panels optical clear conductive material, connect grid 16
An edge lengths more than distance 18,19 between adjacent 2 big grid 11 and 11 time, such as the situation shown in Fig. 2 (a), becomes
Connect grid 16 and put in the form of big grid 11, in adjacent big grid 11, with the stacked part of connection grid 16 put in
Unit lattice is left out.On the other hand, when the distance connected between the big grid in a length of adjacent 2 11 and 11 of grid 16
18, less than 19 time, the such as situation shown in Fig. 2 (b), with connect the form that grid 16 connects to arrange adjacent grid 17 be also this
Invent preferred form.The most adjacent grid 17 is m times of one side of unit grid 20, n times of another side (m, n are integer, m
Equal with n, unequal) form.One edge lengths of adjacent grid 17 preferably constitutes the unit lattice 20 of big grid 11
An edge lengths n times (n is integer) 95~105% in the range of.As shown in Fig. 2 (b), when the length of side connecting grid 16
When degree is distance 18, less than 19 between 2 adjacent big grid 11 and 11, becomes adjacent grid 17 and put in the shape of big grid 11
State, constitutes and is left out with the unit lattice 20 of the big grid 11 of adjacent grid 17 overlapping part.Connect grid 16 and adjacent grid
The fine rule width of 17 is preferably the fine rule width of below 20 μm, more preferably 1~10 μm, more preferably unit lattice 20
1~2 times.Additionally, only connect grid 16 and one side of adjacent grid 17 or only connect grid 16 and the one of adjacent grid 17
The part on limit, live width can be thicker.
As it has been described above, Fig. 2 (c) is with unanimous on the whole by the center of Fig. 2 (a) and the connecting portion of the electrode pattern of Fig. 2 (b)
The figure that mode is stacked.Connection grid 16 from Fig. 2 (a) and the central point 15 connecting grid 16 from Fig. 2 (b) are to deviate shape
Become the unit lattice 20 of big grid 11 an edge lengths less than 20%, be preferably offset by less than 10% mode the most unanimous on the whole
It is laid out.From the connection grid 16 of Fig. 2 (a) and connect the varying in size of grid 16 from Fig. 2 (b), but in the present invention
In, 2 preferably stacked connection grid vary in size such situation.As such, it is possible to make the observability of the electrode pattern being stacked
Lower (user of touch screen is difficult to see that electrode pattern).
As it was previously stated, the connection of optical clear conductive material 3a and 3b of the electrode pattern of Fig. 1 (a) and Fig. 1 (b) will be had
The electrode pattern when center in portion 12 is stacked in the way of unanimous on the whole is (in Fig. 1 (c), around big grid 11 and connecting portion 12
Part is as being left white part.Fig. 2 (g) is the figure after a part of Fig. 1 (c) being amplified, and further, Fig. 2 (c) is by Fig. 2 (g)
A part amplify after figure (with reference to Fig. 2 (c) and the symbol 21 of Fig. 2 (g))).When there is described big grid 11 and connecting portion 12
Around when being left white part 21, described in be left white the total light transmittance of part different from the total light transmittance of big grid 11, the most easily draw
Rise and note, it is impossible to obtain the optical transparent electrode that electrode pattern observability is low.
Fig. 3 (a) represents the figure of the example arranging broken string grid in the electrode pattern of Fig. 2 (c), Fig. 3 (b) and Fig. 3
D () represents the figure of other examples arranging broken string grid in the electrode pattern of Fig. 2 (a), Fig. 3 (e) and Fig. 3 (g) represents at Fig. 2
B the electrode pattern of () arranges the figure of other examples of broken string grid.Fig. 4 represents to be put the non-conductive portion being made up of broken string grid
Figure after great.
In the optical transparent electrode of the present invention, the big grid 11 of multiple unit lattice 20 composition and multiple broken string grid 31
Within the difference of aperture opening ratio of the non-conductive portion constituted is preferably 1%, within more preferably 0.78%, particularly preferably 0.5% with
In.Aperture opening ratio in the present invention is such as the definition of International Publication text [0018] section, in other words, i.e. without the face of part in metal portion
It is long-pending that relative to specific part, (it is non-that big grid 11 that such as, multiple unit lattice 20 are constituted or multiple broken string grid 31 are constituted
Conductive part) the ratio of the gross area.Such as, for obtaining the electrode pattern of Fig. 3 (a), by the electrode pattern group of Fig. 3 (b) He Fig. 3 (c)
Closing, Fig. 3 (b) is to be formed by 2 big grid 11 (conductive part) and 4 parts (non-conductive portion) being made up of multiple broken string grid 31
Pattern, Fig. 3 (c) is the pattern formed by 2 big grid 11 (conductive part).Can be according to International Publication text [0018] Duan Ding
The method of justice obtains the aperture opening ratio of the big grid 11 (conductive part) being made up of multiple unit lattice 20.Furthermore, it is possible to according to following
Explanation, try to achieve the aperture opening ratio of non-conductive portion being made up of broken string grid 31.
Broken string grid refers to the grid that the trellised fine rule of structure breaks.In the diagram, in the way of adjacent with conductive part, logical
Crossing existence broken string grid 31 and form non-conductive portion 6, in described conductive part, the thin thread part 4 of component unit grid 20 is continuous print,
Described broken string grid 31 is made up of the thin thread part 5 broken.The aperture opening ratio of described non-conductive portion 6 refers to: from described non-conductive portion 6
The ratio of the area removing the part after the thin thread part 5 of broken string in area and the area of the non-conductive portion 6 of the thin thread part 5 comprising broken string
Value.
Additionally, account for the biggest grid with the area sum of the difference of the aperture opening ratio of non-conductive portion big grid 11 within 1%
More than the 80% of 11 area sums, moreover it is preferred that with the face of the difference of the aperture opening ratio of the conductive part non-conductive portion within 1%
Long-pending sum accounts for more than the 80% of the area sum of whole non-conductive portion.Further, the aperture opening ratio of more preferably whole big grid 11
Equal, and the aperture opening ratio of whole non-conductive portion is equal.But, during computationally stating aperture opening ratio, ignore at electrode pattern
In the logo portion etc. that arbitrarily arranges.
Big grid 11 and non-conductive portion use the unit lattice of same shape, arrange broken string grid 31 at non-conductive portion, disconnected
Line grid is made up of the thin thread part broken, and therefore, the aperture opening ratio of non-conductive portion uprises.For making opening of big grid 11 and non-conductive portion
The difference of mouth rate, within 1%, can use the ratio of the disconnection portion reducing non-conductive portion to suppress by the peristome caused by disconnection portion
Area occupation ratio raise method;Or, use the shape of the unit lattice 20 changing big grid 11 and non-conductive portion, big grid 11
The pattern using the unit lattice 20 with high aperture compensates the aperture opening ratio rising owing to using broken string grid 31 to cause
Method etc..
Broken string grid 31 (being represented by dashed line in Fig. 3) is made up of by electrically disconnected thin thread part 5 part for line, as long as greatly
Between grid 11 or between connecting portion 12 or form electrically disconnected such disconnection portion between grid 11 and connecting portion 12 greatly,
Form disconnection portion in which way.Broken string degree is unrelated with the length of disconnection portion, draws and is assigned to each broken string grid
The ratio of the number of disconnection portion, as broken string degree.During additionally, cross over multiple broken string grid for disconnection portion, disconnected
The number in line portion is calculated by the number of the broken string grid divided by these disconnection portion total.Further, the most equal when disconnection portion
Etc. ground when being assigned to each structure further, the average outage degree of the minimum repetitive of the structure further containing disconnection portion is made
Broken string degree for non-conductive portion.
Figure 15 is the explanatory diagram of broken string degree, and Figure 15 (a) indicates the figure of the mesh electrode pattern without disconnection portion, Figure 15 (b)
~(d) represents the figure of other examples of the different mesh electrode pattern of broken string degree.Figure 15 (a) indicates the netted electricity without disconnection portion
The figure of pole pattern, so broken string degree is 0%., in structure further (square), there are 2 disconnection portion in the situation of Figure 15 (b)
51, but this disconnection portion 51 is common by two structure further, thus, 1 disconnection portion becomes 1/2 in each structure further,
As broken string degree, it is designated as (1/2) × 2=100%.The situation of Figure 15 (c), disconnection portion 51 is common by four structure further,
Thus, 1 disconnection portion becomes 1/4 in each structure further, owing to four angles of structure further all exist disconnection portion 51, makees
It is designated as (1/4) × 4=100% for broken string degree.Additionally, such as, as shown in Figure 15 (d) by 5 × 5 foursquare unit figure
The net-like pattern that shape is formed, but disconnection portion 51 is incomplete same in structure further, the square that the thick line of Figure 15 (d) surrounds
Part 52 is to repeat.In this case, for the square portion 52 being made up of 4 structure further, because of by four 1/4
Disconnection portion and 1 disconnection portion constitute, so broken string degree is designated as ((1/4) × 4+1 × 1) ÷ 4=50%.Figure 16 is same
It is the figure that broken string degree is described, the square portion 53 there is identical broken string pattern, being made up of foursquare structure further
Repetitive structure.In such cases, broken string degree is designated as (1/4 × 4+1/2 × 12+1 × 15) ÷ 64=34.375%.
In the present invention, the broken string degree of non-conductive portion is preferably more than 20%.Additionally, utilize the four-terminal method of JISK7134
(terminal pitch 5mm) measure non-conductive portion square resistance time, resistance value be preferably 10K Ω/more than, more preferably 1M Ω/
More than, more preferably 1G Ω/more than, be preferably used the non-conductive portion belonging to so-called insulator field.
The fine rule width (width of the thin thread part 5 of the broken string shown in Fig. 4) of the broken string grid 31 that non-conductive portion has is preferred
It is below 20 μm, more preferably 1~10 μm.Additionally, the fine rule spacing of broken string grid 31 (with reference to the symbol L of Fig. 4) is preferably
It is below 500 μm, more preferably below 300 μm.The broken string part (with reference to symbol D1, D2 of Fig. 4) of broken string grid 31
Length is preferably below 30 μm, more preferably below 151 μm.Disconnection portion can break, also with fine rule with intersecting vertically
Can break sideling.Additionally, the fine rule spacing of above-mentioned unit lattice 20 be preferably broken string grid 31 fine rule spacing 80~
120%.Further, when two panels optical clear conductive material is stacked, the aperture opening ratio of big grid 11, the aperture opening ratio of connecting portion 12
It is preferably all within 1% with the aperture opening ratio difference each other of broken string grid 31.
When two panels optical clear conductive material is stacked, has and multiple can obtain the electrode pattern shown in above-mentioned Fig. 3 (a)
Method.As obtaining the example of such electrode pattern, such as, enumerate by as Fig. 3 (b) and the electrode pattern shown in Fig. 3 (c) with
Mode unanimous on the whole is laid out, or is carried out in the way of unanimous on the whole by the electrode pattern as shown in Fig. 3 (d) and Fig. 3 (e)
Stacked, or the method that the electrode pattern as shown in Fig. 3 (f) and Fig. 3 (g) is laid out in the way of unanimous on the whole.As above-mentioned
Shown in example, it is preferable that broken string grid 31 with stacked between broken string grid and time two panels optical clear conductive material is stacked with
Constitute 95~the mode of size of 105% of the unit lattice 20 of big grid 11, form grid (the broken string lattice comprising disconnection portion
Son).
Fig. 5 (a)~(c) represent the figure of an example of the electrode pattern with adjacent grid, for making explanation easy to understand,
Do not represent broken string grid.Fig. 5 (a) represents the figure of the example arranging adjacent grid 17a in the electrode pattern of Fig. 2 (a),
Fig. 5 (b) represents the figure of the example arranging adjacent grid 17b in the electrode pattern of Fig. 2 (b), further, Fig. 5 (c)
For the figure after the center of Fig. 5 (a) and the connecting portion of the electrode pattern of Fig. 5 (b) is stacked in the way of unanimous on the whole.By above-mentioned can
See, for making connecting portion 12 be electrically connected with adjacent 2 big grid 11 by a plurality of route, adjacent grid is set.To this end, preferably set
Put adjacent grid to contact with connection grid 16 and other adjacent grid, or connection grid 16 contacts with big grid 11, or other phases
Adjacent grid contacts with another other adjacent grid.In addition it is also possible to the mode putting in connection grid 16 or other adjacent grid sets
Put adjacent grid.Fig. 5 (d) illustrates that the figure only taken out by the connecting portion 12 of Fig. 5 (a).As shown in Fig. 5 (d), adjacent grid
17a is 171~176 total 6.In the way of making to contact with big grid 11 (not shown) and adjacent grid 172, phase is set
Adjacent grid 171.In the way of making to contact with adjacent grid 171, big grid 11 (not shown) and adjacent grid 173, phase is set
Adjacent grid 172.The alignment of both adjacent grid 173 and adjacent grid 174 constitutes connection grid 16, so that with big grid 11 (in figure
Not showing) the most adjacent adjacent mode of adjacent grid 172,175 arranges adjacent grid 173 and adjacent grid 174.So that with
The mode that adjacent grid 174, big grid 11 (not shown) contact with adjacent grid 176 arranges adjacent grid 175.So that with
The mode that adjacent grid 175 contacts with big grid 11 (not shown) arranges adjacent grid 176.
Shown in the electrode pattern of the Fig. 5 (c) after the electrode pattern of Fig. 5 (a) and the electrode pattern of Fig. 5 (b) are stacked, excellent
The adjacent grid 17a that choosing is arranged in a piece of electrode pattern and the adjacent grid 17b being arranged in the electrode pattern of another sheet
Mutually it is not stacked.Once electrode pattern is stacked, and the total light transmittance step-down of overlapping part easily makes electrode pattern mirror as entirety
Eyes.Additionally, the fine rule width of adjacent grid 17a Yu 17b and fine rule spacing are preferably International Publication text [0018th] section note
The scope identical with unit lattice carried.
Fig. 6 (a)~(c) represent of the electrode pattern adding broken string grid in the electrode pattern of Fig. 5 (a)~(c)
The figure of example.By the electrode pattern of Fig. 6 (a) and the electrode pattern of Fig. 6 (b) are laid out, can make such as Fig. 6 (c) institute
The whole the most nonoverlapping electrode pattern of line shown.
Fig. 7 (a)~(c) are three kinds of differences of the optical transparent electrode of the present invention with two panels optical clear conductive material
The schematic diagrammatic, cross-sectional figure of example.Optical transparent electrode 100a~100c of the present invention is two panels optical clear conduction material
Material 3 is made by adhesive phase 2 is stacked.1 is optical clear base material.As the binding agent of composition adhesive phase 2, can make
Use known binding agent, such as acrylic adhesive;Polyurethane series binding agent;Or use thermoplastic resin, such as EVA or
PVB;Polyurethane series hotmelt;Thermosetting resin, such as epoxy resin or thermosetting polyurethane resin;Ultraviolet hardening
Known binding agent such as resin, such as acrylic acid series ultraviolet curable resin, epoxy ultraviolet curable resin etc..As optical lens
The stacked direction of bright conductive material 3, can be to use any one following form: the optical clear conduction material as shown in Fig. 7 (a)
The back side (not having the face of conductive part 61) of material 3 is relative with surface (having the face of conductive part 61), optical clear as shown in Fig. 7 (b)
The back side of conductive material 3 is relative with the back side, the surface of optical clear conductive material 3 as shown in Fig. 7 (c) is relative with surface.
The optical clear base material used as the optical clear conductive material of the present invention, is preferably used plastics, glass, rubber
Glue, pottery etc..Above-mentioned optical clear base material is preferably total light transmittance optical clear base material more than 60%.In the plastic, by
In having, flexible resin molding operability is excellent, thus suitably uses.As optical clear base material, as using resin molding
Instantiation, can enumerate the polyester resin such as polyethylene terephthalate (PET) or PEN (PEN),
Acrylic resin, epoxy resin, fluororesin, organic siliconresin, polycarbonate resin, diacetate resin, triacetate resin,
Polyarylate resin, polrvinyl chloride, polysulfone resin, polyethersulfone resin, polyimide resin, polyamide, vistanex, ring
The resin molding that shape vistanex etc. are constituted, the thickness of described resin molding is preferably 50~300 μm.Can also be at optical clear base
The known layers such as easy adhesive layer are set on material.It is possible to further arrange the public affairs such as physical development nucleus layer on optical clear base material
The layer known.
Conductive part 61 is metal, particularly preferably uses the composite that gold, silver, copper, nickel, aluminum and above-mentioned metal are constituted.
As the method forming these conductive parts 61, it is possible to use following known method: the method using silver sensitive material;Use
Same procedure implements electroless plating or electrolysis electric plating method further on the silver-colored image obtained;Use silk screen print method prints
The method of the conductive inks such as brush silver slurry;The method using the conductive inks such as ink-jet method printed silver ink;With electroless plating etc.
The method forming the conductive layer that the metals such as copper are constituted;Or after forming conductive layer by vapour deposition or sputter etc., shape in the above
Become etchant resist, then through overexposure, the method developing, etch, remove resist layer;Stick the metal formings such as Copper Foil, the most thereon
Form etchant resist, through overexposure, the method etc. of the resist layer that develops, etches, removes.Wherein, it is preferably used and can make conductive part 61
Lower thickness, the most easily make the silver salt diffusion transfer method that the live width of conductive part 61 attenuates micro-.As silver salt diffusion transfer
Method, such as, the open 2003-77350 publication of Japanese patent application or the open 2005-250169 publication of Japanese patent application
In on the books.Make the thickness of conductive part 61 made in aforementioned manners the thinnest, it is difficult to guarantee as necessary to touch screen
Electric conductivity.Therefore, this thickness is preferably 0.05~5 μm, more preferably 0.1~1 μm.
In the present invention, in addition to optical clear base material 1 is with the conductive part 61 being arranged on this optical clear base material 1, optics
Transparent conductive material 3 can also on electrode pattern on (distance optical clear base material 1 remote side) or optical clear base material with
The side that electrode pattern is contrary arranges the known layer such as hard conating, anti-reflection layer, adhesive layer, antiglare layer.
It follows that illustrate for optical transparent electrode.Described optical transparent electrode is on the two sides of optical clear base material
On there is the connecting portion that electrically connects with adjacent big grid of big grid that reticulated conductive portion is formed, with surface and the connection at the back side
Portion is stacked such mode and arranges and be made.
Fig. 8 represents the outline of other examples of the optical transparent electrode of the present invention with a piece of optical clear conductive material
Cross-sectional view.As optical clear base material 1, the optical transparent electrode 100d of the present invention can use two panels optics with above-mentioned
Transparent conductive material is stacked the optical clear base material phase that the optical transparent electrode (being designated as two plate electrodes below) being made has
Same optical clear base material.As two plate electrodes, optical clear base material 1 can be arranged physical development nucleus layer, easy adhesive layer,
The known layer such as adhesive phase.
In Fig. 8, conductive part 71,72 is metal, particularly preferably uses gold, silver, copper, nickel, aluminum and above-mentioned metal to constitute
Composite.As the method forming these conductive parts 71, it is possible to use the method identical with above-mentioned conductive part 61.Additionally, its
In, it is preferably used and can make the lower thickness of conductive part 71,72, the most easily make the live width of conductive part 71,72 attenuate micro-
Silver salt diffusion transfer method.Nonetheless, different from two plate electrodes, a piece of for the what is called that optical clear conductive material is 1
Electrode, it is necessary for arranging conductive part on the two sides of optical clear base material, makees leading of one side by above-mentioned silver salt diffusion transfer legal system
Electricity portion 71, next arranges conductive part 72 by same method or method known in other at remaining one side, so can be two
Conductive part is set on face.Especially, the autofrettage of exposure process is included in operation, such as, by vapour deposition or sputter shape
Become after conductive layer, be formed thereon etchant resist, then through overexposure, the method developing, etch, remove resist layer;Stick Copper Foil
Etc. metal forming, it is formed on etchant resist further, through overexposure, the method developing, etch, remove resist layer;Use silver salt
The method of diffusion-transfer process;Use the method etc. of monochrome silver salt photographic process;When being exposed, top and bottom can be improved with shank
The degree of accuracy of position relatively, therefore be preferably used.The conductive part 71 made by these methods and the thickness once mistake of conductive part 72
Thin, it is difficult to guarantee as electric conductivity necessary to touch screen.Therefore, thickness is preferably 0.05~5 μm, more preferably 0.1~1 μ
m。
In addition at optical clear base material 1 with the conductive part 71,72 being arranged on optical clear base material, the optical lens of Fig. 8
Prescribed electrode 100d (side that distance optical clear base material 1 is remote) can also arrange hard conating, anti-reflection layer, glue on electrode pattern
Close the known layer such as layer, antiglare layer.
Embodiment
Hereinafter, by embodiment, the present invention is further illustrated, but the present invention is not limited by these embodiments
Fixed.
Embodiment 1
As optical clear base material, the polyethylene terephthalate film using thickness to be 100 μm.This optical clear base
The total light transmittance of material is 91%.
Below according to following formula, make physical development nucleus layer coating fluid, be then coated on optical clear base material, warp
It is dried and physical development nucleus layer is set.
The preparation of palladium sulfide colloidal sol
A chlorination processes palladium 5g
Hydrochloric acid 40ml
Distilled water 1000ml
B liquid sodium sulfide 8.6g
Distilled water 1000ml
Under stirring, A liquid and B liquid are mixed, by ion exchange resin packed column after 30 minutes, obtains palladium sulfide colloidal sol.
The preparation of physical development nucleus layer coating fluid/every 1m2Optical clear base material
(polyethyleneglycol diglycidylether that Na ガ セ ケ system テ Star Network ス (strain) manufactures)
10 mass %SP-200 aqueous solution 0.5mg
(the polymine that (strain) Japan catalyst manufactures;Mean molecule quantity: 10,000)
Then, from the beginning of the side that distance optical clear base material is near, above-mentioned physical development nucleus layer is coated with in order
There is the intermediate layer of following compositions, silver halide emulsion layer and protective layer, obtain silver sensitive material 1 after drying.Silver halide emulsion
General double note mixing method manufacture of agent photographic silver halide Emulsion.This silver emulsion 95 moles of % of silver chloride and Silver monobromide
5 moles of %, being adjusted to mean diameter is that 0.15 μm is prepared.Conventionally, sodium thiosulfate and gold chloride are used, to upper
The silver emulsion that method of stating prepares is implemented gold and is added sulfur sensitizing.As in the silver emulsion that the method obtains, every 1g silver has
0.5g gelatin.
The composition in intermediate layer/every 1m2Optical clear base material
Gelatin 0.5g
Surfactant (there is the material of below formula (1)) 5mg
Dyestuff (there is the material of below formula (2)) 0.1g
The composition of silver halide emulsion layer/every 1m2Optical clear base material
The composition of protective layer/every 1m2Optical clear base material
Gelatin 1g
Amorphous silica delustering agent (mean diameter 3.5 μm) 10mg
Surfactant (there is the material of above chemical formula (1)) 10mg
Preparing original A1 and original B1 respectively, described original A1 has the electrode pattern of Fig. 1 (a),
The part that big grid 11 and connecting portion 12 are electrically connected has the electrode pattern of Fig. 9 (a), and big grid 11 does not enters with connecting portion 12
The part of row electrical connection has the electrode pattern of Fig. 9 (c), and described original B1 has the electrode pattern of Fig. 1 (b), at big lattice
The part that son 11 and connecting portion 12 are electrically connected has the electrode pattern of Fig. 9 (b), and big grid 11 does not carries out electricity with connecting portion 12
The part connected has the electrode pattern of Fig. 9 (d).
In original A1 and original B1, the Unit Cell that big grid 11 is made up of the square that the length of side is 0.25mm
Son 20 is constituted, and big grid 11 is the square of 5mm for the length of side, and these big grid 11 and unit lattice 20 are 7 μm by width
Fine rule is constituted.Additionally, broken string grid 31 is the square (with reference to the symbol S of Fig. 4) that the length of side is 0.25mm, broken string grid 31 passes through
Width is that the fine rule of 8 μm is constituted.Additionally, broken string grid 31 has the disconnection portion of 10 μm every 67.5 μm (with reference to the symbol P of Fig. 4)
(with reference to the symbol D1 of Fig. 4).In this broken string grid 31, a length of 10 μm of the disconnection portion corresponding for symbol D2 of Fig. 4.
The connecting portion 12 of the original A1 as shown in Fig. 9 (a) is only by the company of the square (live width 7 μm) that the length of side is 1mm
Connect grid 16 to constitute.On the other hand, the connecting portion 12 of the original B1 as shown in Fig. 9 (b) is the square of 0.5mm by the length of side
The connection grid 16 of (live width 7 μm) and 2 same foursquare adjacent grid 17 are constituted.
By former with transparent for the surface with silver halide emulsion layer side of the silver sensitive material 1 obtained according to the method described above
The surface laminating with electrode pattern side of original text A1, uses the contact printer with mercury lamp as light source, filters through resin
Device exposes, the light of the wavelength of described resin below filter filters 400nm.Additionally, silver sensitive material 1 had silver halide
After the surface laminating with electrode pattern side of the surface of emulsion layer side and original B1, similarly it is exposed.This
Outward, for embodiment described later and comparative example, when being exposed, the surface of laminating is same as in Example 1.
Hereafter, at 20 DEG C, after following diffusion transfer developer solution impregnates 60 seconds, then wash away with the warm water of 40 DEG C
Silver halide emulsion layer, intermediate layer and protective layer, obtain the optical clear having the electrode pattern identical with A1 as silver pattern
Conductive material 1a, washes away silver halide emulsion layer, intermediate layer and protective layer with the warm water of 40 DEG C, obtain with have identical with B1
Electrode pattern is as the optical clear conductive material 1b of silver pattern.Additionally, between the live width of optical clear conductive material obtained, line
Away from identical in A1 with B1, in optical clear conductive material 1a and 1b obtained, the aperture opening ratio of big grid 11 is
94.5%.On the other hand, in above-mentioned original A1 and B1, as disconnection portion, there are the broken string lattice that broken string degree is 600%
Son, the broken string grid and the broken string grid of 800% of 700%, the aperture opening ratio in each broken string grid above-mentioned is respectively 94.5%,
94.6% and 94.7%.Therefore, in the present embodiment, the difference of the aperture opening ratio of big grid and non-conductive portion that reticulated conductive portion is formed is
Greatly 0.2%, wherein, described non-conductive portion has broken string grid, and in described broken string grid, a part for fine rule breaks and loses
Electrical conductance.
The composition of diffusion transfer developer solution
All being dissolved in above-mentioned in 1000ml water, regulation pH is 12.2.
Use MHM-FW25 (two-sided tape without base material that day Xue chemical industry (strain) manufactures), according to the light shown in Fig. 7 (a)
Learn the direction of transparent conductive material, by optical clear conductive material 1a and 1b that obtain so that the connection of conductive material 1a and 1b
The mode that the center in portion 12 is consistent is fitted, and obtains optical transparent electrode 1.Additionally, in optical transparent electrode 1, big grid
Shown in 11 and enlarged drawing such as Fig. 9 (e) of electrode pattern of being electrically connected of connecting portion 12.Additionally, big grid 11 and connecting portion 12
Shown in the enlarged drawing of the electrode pattern not being electrically connected such as Fig. 9 (f).Embodiment 2
In addition to using original A2 and original B2, carry out operation same as in Example 1, obtain optical clear
Electrode 2.Described original A2 has the electrode figure of Figure 10 (a) in the part that big grid 11 and connecting portion 12 are electrically connected
Case, the part not being electrically connected at big grid 11 and connecting portion 12 has the electrode pattern of Fig. 9 (c), described original B2
The part being electrically connected at big grid 11 and connecting portion 12 has the electrode pattern of Figure 10 (b), at big grid 11 and connecting portion
12 parts not being electrically connected have the electrode pattern of Fig. 9 (d).In addition, optical clear electricity is obtained similarly to Example 1
Pole 2.
In original A2 and original B2, unit lattice 20 and broken string grid 31 and original A1 and transparent former
The unit lattice 20 of original text B1, broken string grid 31 have identical live width, distance between centers of tracks and disconnection portion.
The connecting portion 12 of original A2 is by the connection grid 16 of the square (live width 7 μm) that the length of side is 0.5mm and 2 phases
Constitute with foursquare adjacent grid 17.The connecting portion 12 of original B2 is by the square (live width 7 μm) that the length of side is 0.5mm
The adjacent grid 17 connecting grid 16 and 2 identical square is constituted.Additionally, in optical transparent electrode 2, big grid 11 and company
Connect shown in electrode pattern such as Figure 10 (c) that portion 12 is electrically connected, the electrode that big grid 11 and connecting portion 12 are not electrically connected
Shown in the enlarged drawing of pattern such as Fig. 9 (f).Additionally, the big grid that formed of reticulated conductive portion in the present embodiment and non-conductive portion
The difference of aperture opening ratio is same as in Example 1, and wherein, described non-conductive portion has broken string grid, in described broken string grid the one of fine rule
Partial disconnection and lose electrical conductance.
Embodiment 3
In addition to using original A3 and original B3, carry out operation same as in Example 1, obtain optical clear
Electrode 3.Described original A3 has the electrode figure of Figure 11 (a) in the part that big grid 11 and connecting portion 12 are electrically connected
Case, the part not being electrically connected at big grid 11 and connecting portion 12 has the electrode pattern of Figure 11 (c), described original B3
The part being electrically connected at big grid 11 and connecting portion 12 has the electrode pattern of Figure 11 (b), at big grid 11 and connecting portion
12 parts not being electrically connected have the electrode pattern of Figure 11 (d).
In original A3 and original B3, unit lattice 20 and broken string grid 31 and original A1 and transparent former
The unit lattice 20 of original text B1, broken string grid 31 have identical live width, distance between centers of tracks and disconnection portion.
The connecting portion 12 of original A3 by the square (live width 7 μm) that the length of side is 0.25mm connection grid 16 and and its
The adjacent grid 17 of the adjacent square that 2 length of sides are 0.5mm (live width 7 μm) is constituted.On the other hand, the company of original B3
Meet portion 12 to be only made up of the connection grid 16 of the square (live width 7 μm) that the length of side is 0.75mm.Additionally, at optical transparent electrode 3
In, shown in electrode pattern such as Figure 11 (e) that big grid 11 and connecting portion 12 are electrically connected, big grid 11 and connecting portion 12 do not enter
Shown in electrode pattern such as Figure 11 (f) of row electrical connection.Additionally, the big grid that the reticulated conductive portion in the present embodiment is formed is led with non-
The difference of the aperture opening ratio in electricity portion is same as in Example 1, and wherein, described non-conductive portion has broken string grid, thin in described broken string grid
A part for line breaks and loses electrical conductance.
Embodiment 4
In addition to using original A4 and original B4, carry out operation same as in Example 1, obtain optical clear
Electrode 4.Described original A4 has the electrode figure of Figure 12 (a) in the part that big grid 11 and connecting portion 12 are electrically connected
Case, the part that big grid 11 and connecting portion 12 are not electrically connected has the electrode pattern of Figure 12 (c), and described original B4 exists
The part that big grid 11 and connecting portion 12 are electrically connected has the electrode pattern of Figure 12 (b), and big grid 11 is with connecting portion 12 not
The part being electrically connected has the electrode pattern of Figure 12 (d).
In original A4 and original B4, unit lattice 20 and broken string grid 31 and original A1 and transparent former
The unit lattice 20 of original text B1, broken string grid 31 have identical live width, distance between centers of tracks and disconnection portion.
The connecting portion 12 of original A4 is by connecting grid as follows and adjacent grid is constituted: the length of side is the square of 0.75mm
The connection grid 16 (being made up of the rectangular adjacent grid (live width 7 μm) of 3 0.25mm × 0.75mm) of (live width 7 μm);2
The length of side adjacent with described connection grid 16 is the foursquare adjacent grid of 0.5mm;2 with the described length of side be 0.5mm just
Square adjacent grid and the adjacent grid connecting 0.25mm × 0.5mm that grid 16 contacts;2 and described 0.25mm ×
The adjacent grid of 0.25mm × 0.25mm that the adjacent grid of 0.5mm is adjacent.On the other hand, the connecting portion 12 of original B4 by
The length of side is that the connection grid 16 of the square (live width 7 μm) of 1.25mm is (by the rectangle (live width 7 μm) of 2 0.5mm × 1.25mm
With the rectangle of 1 0.25mm × 1.25mm (live width 7 μm) constitute) and 8 make connection grid 16 and big grid 11 be electrically connected
The length of side connect is that the adjacent grid of square 17 (live width 7 μm) of 0.25mm is constituted.Additionally, in optical transparent electrode 4, big grid
Shown in 11 and electrode pattern such as Figure 12 (e) of being electrically connected of connecting portion 12, big grid 11 and connecting portion 12 are not electrically connected
Electrode pattern such as Figure 12 (f) shown in.Additionally, the big grid of reticulated conductive portion formation in the present embodiment and opening of non-conductive portion
The difference of mouthful rate is same as in Example 1, and wherein, described non-conductive portion has broken string grid, in described broken string grid one of fine rule
Disjunction line and lose electrical conductance.
Comparative example 1
In addition to using original A5 and original B5, carry out operation same as in Example 1, obtain comparative example 1
Optical transparent electrode.The part that described original A5 is electrically connected at big grid 11 and connecting portion 12 has Figure 13 (a)
Electrode pattern, the part that big grid 11 and connecting portion 12 are not electrically connected has the electrode pattern of Figure 13 (c), described transparent
Original copy B5 has the electrode pattern of Figure 13 (b), big grid 11 and company in the part that big grid 11 and connecting portion 12 are electrically connected
Connect the part that portion 12 is not electrically connected and there is the electrode pattern of Figure 13 (d).
In original A5 and original B5, unit lattice 20 and original A1 and the Unit Cell of original B1
Son 20 has identical live width, distance between centers of tracks.
The connecting portion 12 of original A5, B5 by the connection grid 16 of the square (live width 7 μm) that the length of side is 0.5mm with saw
Dentation configuration forms.Additionally, in the optical transparent electrode of comparative example 1, the electricity that big grid 11 and connecting portion 12 are electrically connected
Shown in pole pattern such as Figure 13 (e), additionally, electrode pattern such as Figure 13 (f) institute that big grid 11 and connecting portion 12 are not electrically connected
Show.
Comparative example 2
In addition to using original A6 and original B6, carry out operation same as in Example 1, obtain comparative example 2
Optical transparent electrode.The part that described original A5 is electrically connected at big grid 11 and connecting portion 12 has Figure 14 (a)
Electrode pattern, the part that big grid 11 and connecting portion 12 are not electrically connected has the electrode pattern of Figure 14 (c), described transparent
Original copy B6 has the electrode pattern of Figure 14 (b), big grid 11 and company in the part that big grid 11 and connecting portion 12 are electrically connected
Connect the part that portion 12 is not electrically connected and there is the electrode pattern of Figure 14 (d).
In original A6 and original B6, unit lattice 20 and original A1 and the Unit Cell of original B1
Son 20 has identical live width, distance between centers of tracks.
The connecting portion 12 of original A6, B6 by the connection grid 16 of the square (live width 7 μm) that the length of side is 0.5mm with saw
Dentation configuration forms.Additionally, in the optical transparent electrode of comparative example 2, the electricity that big grid 11 and connecting portion 12 are electrically connected
Shown in pole pattern such as Figure 14 (e), additionally, electrode pattern such as Figure 14 (f) institute that big grid 11 and connecting portion 12 are not electrically connected
Show.
The optical transparent electrode 1 of the present invention obtained according to the method described above by visual valuation~4 and the light of comparative example 1,2
Learn the observability of transparency electrode.It is clear that electrode pattern be designated as 1;Even if seldom but it can be seen that being designated as of electrode pattern
2;Carefully see it can be seen that electrode pattern be designated as 3;Do not watch attentively cannot differentiate electrode pattern be designated as 4;Electrode cannot be differentiated completely
Pattern be designated as 5.Evaluation result is as shown in table 1.Certainly, for reaching the purpose of the present invention, the preferably numerical value of table 1 is the bigger the better.
Table 1
Observability | |
The optical transparent electrode 1 of the present invention | 5 |
The optical transparent electrode 2 of the present invention | 4 |
The optical transparent electrode 3 of the present invention | 5 |
The optical transparent electrode 4 of the present invention | 5 |
The optical transparent electrode of comparative example 1 | 2 |
The optical transparent electrode of comparative example 2 | 1 |
As can be known from the results of Table 1, it will therefore be apparent that the observability of the electrode pattern of the optical transparent electrode of the present invention is low.
Embodiment 5
Use the polyethylene terephthalate film that embodiment 1 uses as optical clear base material.
Below, make the physical development nucleus layer coating fluid used in embodiment 1, be coated on optical clear base material, be dried
After physical development nucleus layer is set.
Then, start to be coated with in fact on above-mentioned physical development nucleus layer in order from the side that distance optical clear base material is near
Execute intermediate layer, silver halide emulsion layer and the protective layer used in example 1, obtain silver sensitive material after drying.
The silver sensitive material obtained according to the method described above and original A1 being fixed on shank, laminating, with mercury lamp
For light source, exposing through light filter with contact printer, described light filter is only capable of the light through 254nm.
Hereafter, at 20 DEG C, after the diffusion transfer developer solution used in embodiment 1 impregnates 60 seconds, then with 40 DEG C
Warm water washing remove silver halide emulsion layer, intermediate layer and protective layer, be then dried process.So, at optical clear
The silver-colored pattern that thickness is 0.1 μm is obtained on base material.Additionally, this silver pattern and original A1 have identical live width.
With same as in Example 1 on the optical clear base material in the face relative with the silver-colored pattern obtained according to the method described above
Method physical development nucleus layer is set, further, be coated with intermediate layer, silver halide emulsion layer, protective layer in order.Will be according to
Silver sensitive material and original B6 shank that said method makes are fixed, are fitted, and with mercury lamp as light source, beat by contact
Print machine exposes through light filter, and described light filter is only capable of the light through 254nm, and wherein, the image of described original B6 is
The mirror image of bright original copy B1, above-mentioned fixing is carried out as follows: the center of the connecting portion that the silver-colored pattern obtained in advance has
Point 15 is consistent with the central point 15 of the connecting portion that original B6 has, shown in connecting portion such as Fig. 9 (e) of big grid, with
Shown in part such as Fig. 9 (f) that big grid is not connected with.
Hereafter, at 20 DEG C, after the diffusion transfer developer solution used in embodiment 1 impregnates 60 seconds, then with 40 DEG C
Warm water washing remove silver halide emulsion layer, intermediate layer and protective layer, be then dried process.So, obtain at optics
The reverse side of transparent base has the optical clear electricity of the silver-colored pattern (thickness be 0.1 μm) different from the silver-colored pattern arranged in advance
Pole 5.Additionally, this pattern is to have the silver-colored pattern of identical live width with original B6.The observability of the optical transparent electrode 5 obtained
Identical with optical transparent electrode 1, electrode pattern cannot be differentiated completely.Additionally, reticulated conductive portion in the present embodiment formed big
Grid is same as in Example 1 with the difference of the aperture opening ratio of non-conductive portion, and wherein, described non-conductive portion has broken string grid, described disconnected
In line grid, a part for fine rule breaks and loses electrical conductance.
Symbol description
1 optical clear base material
1a optical clear base material
1b optical clear base material
2 adhesive phases
3 optical clear conductive materials
3a optical clear conductive material
3b optical clear conductive material
The thin thread part that the foursquare limit of 4 component unit grid is formed
The thin thread part of 5 broken strings
6 non-conductive portion
11 big grid
12 connecting portions
The connecting line of the central point of 13 2 big grid
The central point of 14 big grid
The central point of 15 connecting portions
16 connect grid
17, the adjacent grid of 17a, 17b
18, the distance between 19 adjacent big grid
20 unit lattice
It is left white part around 21 big grid and connecting portion
31 broken string grid
51 disconnection portion
52 projected square part
53 projected square part
61,71,72 conductive part
171,172,173,174,175,176 adjacent grid
100,100a, 100b, 100c, 100d optical transparent electrode
Claims (4)
1. an optical transparent electrode, described optical transparent electrode is made by two panels optical clear conductive material is stacked, institute
State optical clear conductive material to have in the one side of optical clear base material: the big grid formed by reticulated conductive portion;At least have
Having 1 connecting portion connecting grid, described connecting portion is electrically connected between adjacent big grid;
It is characterized in that, by described two panels optical clear conductive material in the way of the center that makes respective connecting portion is unanimous on the whole
Being laid out, described connecting portion is only made up of connection grid, or is made up of connection grid and attached adjacent grid thereof, described two
What sheet optical clear conductive material each had connect the varying in size of grid, and described in the shape connecting grid that varies in size
Broadly similar, and the most a piece of optical clear conductive material has broken string grid, and described broken string grid is corresponding to described folded
In the described connecting portion of optical transparent electrode when putting making and/or described big grid and the position of described connecting portion peripheral part
On, a part for fine rule breaks and loses electrical conductance.
2. an optical transparent electrode, described optical transparent electrode has on the two sides of optical clear base material: by reticulated conductive
The big grid that portion is formed;At least having 1 connecting portion connecting grid, described connecting portion carries out electricity between adjacent big grid
Connect;
It is characterized in that, the center of the connecting portion that the center of connecting portion one side being had has with another side is with unanimous on the whole
Mode is configured, and described connecting portion is only made up of connection grid, or is made up of connection grid and attached adjacent grid thereof, institute
That states that one side and described another side have connects the varying in size of grid, and described in the shape connecting grid that varies in size substantially
Similar, and have broken string grid at least one side, described broken string grid is in corresponding to described connecting portion and/or described big lattice
On the position of sub and described connecting portion peripheral part, a part for fine rule breaks and loses electrical conductance.
3. optical transparent electrode as claimed in claim 1 or 2, it is characterised in that the described big lattice formed by reticulated conductive portion
The difference of the aperture opening ratio of son and non-conductive portion is within 1%, and described non-conductive portion has broken string grid, fine rule in described broken string grid
A part broken string and lose electrical conductance.
4. optical transparent electrode as claimed in claim 1 or 2, it is characterised in that described big grid is by multiple unit lattice structures
Becoming, the fine rule spacing of described unit lattice is the 80~120% of the fine rule spacing of described broken string grid.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-166240 | 2011-07-29 | ||
JP2011166240A JP5809475B2 (en) | 2011-07-29 | 2011-07-29 | Light transmissive conductive material |
JP2011-247624 | 2011-11-11 | ||
JP2011247624A JP5841411B2 (en) | 2011-11-11 | 2011-11-11 | Light transmissive electrode |
PCT/JP2012/068298 WO2013018549A1 (en) | 2011-07-29 | 2012-07-19 | Translucent electrode |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103797449A CN103797449A (en) | 2014-05-14 |
CN103797449B true CN103797449B (en) | 2016-11-30 |
Family
ID=
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102016768A (en) * | 2008-02-28 | 2011-04-13 | 3M创新有限公司 | Touch screen sensor having varying sheet resistance |
CN102112949A (en) * | 2008-07-31 | 2011-06-29 | 郡是株式会社 | Planar element, and touch switch |
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102016768A (en) * | 2008-02-28 | 2011-04-13 | 3M创新有限公司 | Touch screen sensor having varying sheet resistance |
CN102112949A (en) * | 2008-07-31 | 2011-06-29 | 郡是株式会社 | Planar element, and touch switch |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101587486B1 (en) | Translucent electrode | |
CN104956295B (en) | Light air electrode | |
CN106233234B (en) | Light-transmitting conductive material | |
CN104106027B (en) | Optical transparent electrode | |
CN103380411A (en) | Electroconductive sheet and touch panel | |
JP2013246723A (en) | Light-transmissive electrode for capacitance touch panel | |
CN106471451B (en) | The saturating conductive material of light | |
CN107407999A (en) | Transmitance conductive material | |
CN106029367A (en) | Multilayer structure and touch panel module | |
CN108292185B (en) | Light-transmitting conductive material | |
TWI559189B (en) | Optical transparent conductive material | |
CN107003760B (en) | Light-transmitting conductive material | |
CN109564488A (en) | Conductive membrane and touch panel | |
CN107111396B (en) | Light-transmitting conductive material | |
TWI558543B (en) | Optically transparent conductive material | |
TWI525515B (en) | Transparent conductive structure | |
CN107710128B (en) | Light-transmitting conductive material | |
CN103797449B (en) | Optical transparent electrode | |
KR20120001605A (en) | Method of manufacturing conductive film and light emitting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161130 Termination date: 20200719 |