CN103794680A - Method for improving performance of silicon nanowire solar cell - Google Patents
Method for improving performance of silicon nanowire solar cell Download PDFInfo
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- CN103794680A CN103794680A CN201410043904.2A CN201410043904A CN103794680A CN 103794680 A CN103794680 A CN 103794680A CN 201410043904 A CN201410043904 A CN 201410043904A CN 103794680 A CN103794680 A CN 103794680A
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- nanometer line
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000002070 nanowire Substances 0.000 title abstract description 19
- 239000003792 electrolyte Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 239000000376 reactant Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 3
- 230000001678 irradiating effect Effects 0.000 abstract 2
- 230000006641 stabilisation Effects 0.000 abstract 2
- 238000011105 stabilization Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention provides a method for improving the performance of a silicon nanowire solar cell. The method includes the steps of (1) placing the silicon nanowire solar cell and an electric conduction metal net into an electrolyte, and enabling the silicon nanowire solar cell and the electric conduction metal net to be connected to the negative electrode and the positive electrode of a voltage stabilization direct-current power source respectively, (2) irradiating the silicon nanowire solar cell through light while the voltage stabilization direct-current power source is started, and enabling irradiating to last for a preset time, and (3) taking the silicon nanowire solar cell out of the electrolyte, and washing the silicon nanowire solar cell. According to the method, the efficiency of the silicon nanowire solar cell can be improved, the process simple, and cost is low.
Description
Technical field
The invention belongs to technical field of solar batteries, relate generally to a kind of method of improving silicon nanometer line solar battery performance.
Background technology
In recent years, along with the continuous increase of people to energy demand, caused increasing concern as the solar energy of one of regenerative resource.Solar cell is the focus that electric energy becomes research gradually by light energy conversion.Crystal silicon cell is as first generation solar cell, there is good conversion efficiency, abundant raw materials (earth's crust content abundance the second element is silicon) is nontoxic, but the preparation energy recovery term of crystal silicon cell is long, makes crystal silicon solar energy battery realize large-scale application cost higher.Subsequently, there is the second generation hull cell take low cost as feature, the silicon thin-film battery of one of them is with respect to crystal silicon cell, and its obvious advantage is exactly the preparation cost that has reduced battery, but the conversion efficiency of silicon thin-film battery is lower with respect to body silion cell.Like this, low cost high-conversion rate becomes the target that third generation solar cell insider pursues.
And as one of novel third generation solar cell, silicon nanowires battery reflectivity is starkly lower than silicon thin film, thereby there is a good optical absorption characteristics, silicon nanowires battery radial structure contributes to photo-generated carrier to collect charge carrier on the other hand, the structure that this light absorption direction and photo-generated carrier collecting direction are orthogonal, effectively solve the contradiction that the thick electricity of light is thin (be light absorption need the thick and photo-generated carrier of film to collect to need film thin), therefore, silicon nanowires battery has vast potential for future development.
But, because silicon nanowires has more blemish state, producing more leakage current, energy is consumed at inside battery mostly, and open circuit voltage is often lower than the open circuit voltage of silicon thin-film battery.Therefore, the efficiency of silicon nanometer line solar battery is not high at present.
In sum, if can reduce the leakage current in silicon nanometer line solar battery, the efficiency of the silicon nanometer line solar battery space that will have greatly improved, its practical value also will fully be represented.
Summary of the invention
(1) technical problem that will solve
The technical problem that the present invention solves is the lower problem of efficiency of current silicon nanometer line solar battery.
(2) technical scheme
For solving the problems of the technologies described above, the present invention proposes a kind of method of improving silicon nanometer line solar battery performance, comprise the following steps: S1, silicon nanometer line solar battery and conductive metal mesh are placed in to electrolyte, and this silicon nanometer line solar battery and this conductive metal mesh are connected to respectively to negative pole and the positive pole of constant voltage dc source; S2, when opening described constant voltage dc source with silicon nanometer line solar battery described in irradiation, and continue a scheduled time; S3, from described electrolyte, take out described silicon nanometer line solar battery, and clean.
According to one embodiment of the present invention, described silicon nanometer line solar battery comprises front electrode nesa coating, and described electrolyte is the solution that can generate insulating properties reactant with described front electrode electrically conducting transparent film reaction.
According to one embodiment of the present invention, the liquor alumini chloridi that the concentration of described electrolyte is 5g/L～200g/L.
According to one embodiment of the present invention, the conductive metal mesh that described conductive metal mesh is printing opacity.
According to one embodiment of the present invention, the voltage range of described constant voltage dc source is 0.1V～20V.
According to one embodiment of the present invention, described conductive metal mesh and described silicon nanometer line solar battery are parallel to each other to be positioned in described electrolyte.
According to one embodiment of the present invention, described in described step S2, be the electromagnetic wave that can produce photovoltage to the light of silicon nanometer line solar battery.
According to one embodiment of the present invention, the scheduled time in described step S2 is 15s～200s.
According to one embodiment of the present invention, the cleaning step of described step S3 comprises: with silicon nanometer line solar battery described in deionized water shower, then dry up moisture with high-purity gas.
According to one embodiment of the present invention, described high-purity gas is nitrogen or inert gas.
(3) beneficial effect
The post-processing approach of the performance of improving silicon nanowires battery that the present invention proposes, thus in silicon nanowires battery, add the contour resistive oxide of alundum (Al2O3) can improve battery performance.
The electrochemistry that the present invention proposes and illumination are combined into silicon nanowires passivation reduction dark current, raising battery performance provides a kind of new way.Be different from sublayer, battery preparation process Central Plains deposition (ALD) technology, combined with electrochemical method reprocessing silicon nanometer line solar battery, technique is simple, with low cost.
Accompanying drawing explanation
For further illustrating concrete technology contents of the present invention, be described in detail as follows below in conjunction with embodiment and accompanying drawing, wherein:
Fig. 1 is the flow chart of the method for improving silicon nanometer line solar battery performance of the present invention;
Fig. 2 is the device connection layouts of one embodiment of the present of invention while improving silicon nanometer line solar battery performance;
Fig. 3 is one embodiment of the present of invention current-voltage characteristic curve comparison diagrams before and after silicon nanometer line solar battery improves performance.
Embodiment
Silicon nanometer line solar battery generally includes: back electrode, transparent conductive oxide film (Transparent Conductive Oxide-TCO), silicon nanowires layer and front anodizing indium tin film (Indium Tin Oxide-ITO, one of TCO), improve silicon nanometer line solar battery performance core and be to improve open circuit voltage, fill factor, curve factor.
Principle of the present invention is optionally to change front electrode ITO electric leakage place stoicheiometry, ITO is reduced, ITO film after reduction reacts with electrolyte (as aluminium chloride) and generates high resistance reactant (as aluminium oxide), has blocked leak channel, reduces leakage current.
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
Fig. 1 shows the flow chart of the method for improving silicon nanometer line solar battery performance of the present invention.As shown in Figure 1, method of the present invention comprises the steps:
Step S1, silicon nanometer line solar battery and conductive metal mesh are placed in to electrolyte, and this silicon nanometer line solar battery and this conductive metal mesh are connected to respectively to negative pole and the positive pole of constant voltage dc source.
Conventionally, container that can be using electrolytic cell as electrolyte, electrolyte of the present invention is the metal compound solution that can be reacted into nesa coating insulating properties reactant, and for example aluminium chloride (six water alchlor or anhydrous Aluminum chloride) reacts with tin indium oxide and generates aluminium oxide.
Described insulating properties reactant refers to that resistivity is as the criterion not affect forward photoelectric current, conventionally should be more than 1013 ohmcms.
The concentration of electrolyte can be between 5mg/L～200g/L, according to the difference of metal compound species and can be different.According to the difference of electrolyte, suitable container is made electrolytic cell should to select quality, and the material of for example electrolytic cell can be selected the container of any water insoluble or electrolyte.
The voltage range of constant voltage dc source should be selected between 0.1V～50V adjustable, for example 0.5～10V constant voltage dc source.For whether the connection of constant voltage dc source is controlled, its both positive and negative polarity can be connected with conductive metal mesh, silicon nanometer line solar battery respectively via a switch.
Conductive metal mesh in the present invention role is institute's making alive positive pole, and its printing opacity is radiated at the photovoltage producing on nano wire can protect the battery in the region of not leaking electricity, and keeps its photocell performance.It can be made up of the wire netting of conduction printing opacity.
Described conductive metal mesh, silicon nanometer line solar battery should be mutually opposite one another in electrolytic cells, as anode and the negative electrode of electrochemical reaction.
Step S2, when opening described constant voltage dc source with silicon nanometer line solar battery described in irradiation, and continue a scheduled time.
Open constant voltage dc source is in order to produce photovoltage in battery by irradiation silicon nanometer line solar battery simultaneously.Illumination methods is without specific (special) requirements, as long as can produce photovoltage in nanowire battery, the illumination simulation for example solar simulator being sent is mapped on silicon nanometer line solar battery.
The described scheduled time is depended on concentration, institute's making alive of cell area, electrolyte.Conventionally, can be by first determining concentration of electrolyte, institute's making alive, adding long-time mode gradually and determine the optimization time.For example, when cell area is 5cm × 5cm, the concentration 2mg/100ml of electrolyte, when voltage 1.5V, this time can be 15s.
Step S3, from described electrolyte, take out described silicon nanometer line solar battery, and clean.
Due to silicon nanometer line solar battery, to be stained with electrolyte unfavorable to battery performance, therefore after completing above-mentioned steps, needs to clean described silicon nanometer line solar battery, to remove electrolyte.For example, take out silicon nanometer line solar battery from electrolytic cell after, with this battery of deionized water shower, the lasting shower time removes and is as the criterion with battery surface electrolyte, if the shower time is 3 minutes～10 minutes.Then, dry up the moisture of this battery surface with high-purity gas, high-purity gas can be the inert gas such as nitrogen or argon gas.So far, completed the method for improving silicon nanometer line solar battery of the present invention.
Below with reference to Fig. 2 and Fig. 3, one embodiment of the present of invention are described.
Fig. 2 is the device connection layouts of one embodiment of the present of invention while improving silicon nanometer line solar battery performance.
In this embodiment, at step S1, first-selection selects a beaker to make electrolytic cell, then 10mg six hydration alchlors is dissolved in 500 ml deionized water, is made into electrolyte; Then, get one and be of a size of the silicon nanowires battery of 5cm × 5cm and the printing opacity conductive metal grill of same size; And to select a constant voltage dc source, voltage-regulation scope be 0.1V～5V, and its both positive and negative polarity is connected with transparent conductive metal net, silicon nanometer line solar battery respectively.Then, transparent conductive metal aperture plate, silicon nanometer line solar battery are placed in to beaker in parallel to each other.
In step S2, open constant voltage dc source, this constant voltage dc source is adjusted to 2V, light shine on silicon nanometer line solar battery by xenon lamp simultaneously, timing is simultaneously after 100 seconds, and the voltage that direct current is moved to voltage source is adjusted to 0V.
Then, as step S3, from beaker, take out described silicon nanometer line solar battery, with the liquor alumini chloridi of deionized water shower battery surface, make battery surface liquor alumini chloridi shower clean, then dry up battery surface moisture with high pure nitrogen.
Fig. 3 is one embodiment of the present of invention current-voltage characteristic curve comparison diagrams before and after silicon nanometer line solar battery improves performance.As shown in Figure 3, adopt method of the present invention to process before and represent with hollow triangle (BE), adopt method of the present invention to process afterwards and represent by filled circles (AF).Can find out, all have clear improvement by method of the present invention silicon nanometer line solar battery open circuit voltage after treatment, short circuit current, fill factor, curve factor.
The method of the performance of improving silicon nanometer line solar battery of the present invention is applicable to all micro-nano structure solar cells that make battery drain, can estimate that open circuit voltage, battery material select executed voltage and Arrays Aluminum Films in Acid Solution successively according to battery for other materials micro-nano structure solar cell.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a method of improving silicon nanometer line solar battery performance, is characterized in that, comprises the following steps:
S1, silicon nanometer line solar battery and conductive metal mesh are placed in to electrolyte, and this silicon nanometer line solar battery and this conductive metal mesh are connected to respectively to negative pole and the positive pole of constant voltage dc source;
S2, when opening described constant voltage dc source with silicon nanometer line solar battery described in irradiation, and continue a scheduled time;
S3, from described electrolyte, take out described silicon nanometer line solar battery, and clean.
2. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, it is characterized in that, described silicon nanometer line solar battery comprises front electrode nesa coating, and described electrolyte is the solution that can generate insulating properties reactant with described front electrode electrically conducting transparent film reaction.
3. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, the liquor alumini chloridi that the concentration of described electrolyte is 5mg/L～200g/L.
4. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, the conductive metal mesh that described conductive metal mesh is printing opacity.
5. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, the voltage range of described constant voltage dc source is 0.1V～20V.
6. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, described conductive metal mesh and described silicon nanometer line solar battery are parallel to each other to be positioned in described electrolyte.
7. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, described in described step S2, is the electromagnetic wave that can produce photovoltage to the light of silicon nanometer line solar battery.
8. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, the scheduled time in described step S2 is 15s～200s.
9. the method for improving silicon nanometer line solar battery performance as claimed in claim 1, is characterized in that, the cleaning step of described step S3 comprises: with silicon nanometer line solar battery described in deionized water shower, then dry up moisture with high-purity gas.
10. the method for improving silicon nanometer line solar battery performance as claimed in claim 9, is characterized in that, described high-purity gas is nitrogen or inert gas.
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| CN201410043904.2A CN103794680B (en) | 2014-01-29 | 2014-01-29 | Improve the method for silicon nanometer line solar battery performance |
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| CN201410043904.2A CN103794680B (en) | 2014-01-29 | 2014-01-29 | Improve the method for silicon nanometer line solar battery performance |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855552A (en) * | 2005-03-16 | 2006-11-01 | 通用电气公司 | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US20090266418A1 (en) * | 2008-02-18 | 2009-10-29 | Board Of Regents, The University Of Texas System | Photovoltaic devices based on nanostructured polymer films molded from porous template |
| CN102227002A (en) * | 2011-05-31 | 2011-10-26 | 上海交通大学 | Polysilicon nanowire solar cell and preparation method thereof |
| CN102544232A (en) * | 2012-02-23 | 2012-07-04 | 常州天合光能有限公司 | Method for restoring crystalline silicon polarization component through water tank immersion method |
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2014
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1855552A (en) * | 2005-03-16 | 2006-11-01 | 通用电气公司 | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US20090266418A1 (en) * | 2008-02-18 | 2009-10-29 | Board Of Regents, The University Of Texas System | Photovoltaic devices based on nanostructured polymer films molded from porous template |
| CN102227002A (en) * | 2011-05-31 | 2011-10-26 | 上海交通大学 | Polysilicon nanowire solar cell and preparation method thereof |
| CN102544232A (en) * | 2012-02-23 | 2012-07-04 | 常州天合光能有限公司 | Method for restoring crystalline silicon polarization component through water tank immersion method |
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