CN103794563B - A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response - Google Patents
A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response Download PDFInfo
- Publication number
- CN103794563B CN103794563B CN201410055682.6A CN201410055682A CN103794563B CN 103794563 B CN103794563 B CN 103794563B CN 201410055682 A CN201410055682 A CN 201410055682A CN 103794563 B CN103794563 B CN 103794563B
- Authority
- CN
- China
- Prior art keywords
- laser
- silicon substrate
- annealing
- cmos
- ccd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 230000004044 response Effects 0.000 title claims abstract description 31
- 230000002708 enhancing effect Effects 0.000 title claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000002019 doping agent Substances 0.000 claims abstract description 25
- 239000002210 silicon-based material Substances 0.000 claims abstract description 16
- 238000005457 optimization Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000012545 processing Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 claims description 7
- 241001270131 Agaricus moelleri Species 0.000 claims description 6
- 239000000835 fiber Substances 0.000 claims description 6
- 238000013519 translation Methods 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 238000003754 machining Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- 238000011065 in-situ storage Methods 0.000 claims 1
- 238000005224 laser annealing Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 17
- 230000000295 complement effect Effects 0.000 abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 9
- 150000004706 metal oxides Chemical class 0.000 abstract description 9
- 230000004043 responsiveness Effects 0.000 abstract description 3
- 238000011982 device technology Methods 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000796 flavoring agent Substances 0.000 description 4
- 235000019634 flavors Nutrition 0.000 description 4
- 238000003331 infrared imaging Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000005864 Sulphur Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000002927 oxygen compounds Chemical class 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000004941 influx Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 230000005945 translocation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 231100000636 lethal dose Toxicity 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
Abstract
The invention discloses one kind enhancing silicon substrate image device（CCD（CCD）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Device）The method of infrared response, step is as follows：（1）High-concentration dopant is carried out to silicon substrate material by the method for laser or ion implanting；（2）To step（1）The high-concentration dopant silicon materials for obtaining carry out thermal annealing or pulsed laser anneal；（3）By standard CC D（CCD）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Device technology, uses step（2）High-concentration dopant silicon base after the performance optimization for obtaining, makes image device.Using the method, can greatly strengthen traditional standard CC D（CCD）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Image device near-infrared responsiveness (0.8 μm~1.1 μm), and can response wave length more than 1.1 μm of light wave.
Description
Technical field
The invention belongs to infrared imaging field, more particularly to a kind of enhancing silicon substrate image device（CCD（CCD）
Or CMOS（Complementary metal oxide semiconductors (CMOS)）Device）The method of infrared response.
Background technology
Semiconductor technology with silicon as representative obtains huge development in 20 th century laters.Made as base material with silicon
Photoelectric coupled device（CCD）More it is that of obtaining Nobel Prize in physics in 2009.Since invention, it is in security protection, industry, photography
Etc. aspect bring revolutionary progress, and come into the middle of our everyone daily lifes, such as digital camera, hand
Machine shooting is first-class.At present, commercially it is easy to find pixel more than 16,000,000, Pixel size is less than 2 microns, noise level
Low CMOS and CCD imager part.But, at aspects such as security, monitoring, but need a kind of can have illumination on daytime in a hurry
In the case of work, inexpensive, the high-quality imaging device that can be worked in the case of night no light again.Meanwhile, it is a variety of
Biological identification technology, such as face and iris recognition, develop very fast.Whether face recognition or iris recognition are current
Dominant technology be use near-infrared light (750-850nm) for eliminate illumination and color difference, improve discrimination,
Research using near infrared light it has also been found that can greatly improve discrimination simultaneously.But, whether CCD or cmos imager
Part, because the silicon materials band gap width of maker is in 1.05eV so that silicon can only absorbing wavelength be shorter than 1.1 μm of light radiation.This
, it is intended that the CCD made with silicon materials（CCD）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Imager
The response of part is limited to visible light wave range, it is impossible to light radiation of the response wave length more than 1.1 μm.As a kind of non-immediate band gap material
Material, silicon needs the combination of photon and phonon to realize, to light absorbs, producing an electron hole pair.When optical wavelength close to band edge
When (wavelength is close to 1.1 μm), its absorption to light dies down, and luminous energy penetrates deeper depth.And in order to prevent from harassing, reduce
Noise, CCD and cmos imaging device are all made very thin (less than 7um), this allow for its to light 800-1100nm response
Also drastically decline, limit its application.
Technically main at present to use direct band-gap semicondictor material, such as it is red that InGaAs, HgCdTe and germanium are made
Outer image device completes infrared, near infrared band imaging function, and these materials also show good performance.But it is another
Outer one side, with InGaAs, HgCdTe materials are extremely difficult for the image device production of substrate, often require to make in process of production
With the material indium of severe toxicity（Dosage exceedes lethal dose）, and manufacturing process loss is big, low yield, it is impossible to existing ripe silicon substrate
Production line it is integrated.Germanium can grow on silicon, but bring very big defect concentration because lattice is mismatched, thus
Bring dark current and other undesired characteristics higher.Those described above reason so that although can produce
The focal plane infrared imaging device of function admirable, but all there is high cost, and their application is limited to scope very
It is small do not consider cost in the case of.They are unlikely used in such as security protection, monitor that these capacity are high, cost requirement is low
Place.These using a kind of low cost of eager demand, function admirable, can be integrated with existing production process of semiconductor silicon substrate into
As device.
The Eric Mazur groups of Harvard University found for silicon materials to be placed in SF in 19986In Deng gas, use
Femtosecond laser is irradiated, and resulting silicon materials have from visible ray and all have flat absorption to infrared (6 μm).Research hair
It is existing, it is seen that the influx and translocation of optical band is mainly due to " light capture " table for being obtained by laser assisted etching in process
Face obtains, and the influx and translocation of infrared band is mainly due in the mechanism of laser and material, and the VIth race's element is made
For impurity enters silicon materials, the thermal melting limit that its doping concentration can be considerably beyond VI race's element in silicon.With element sulphur
As a example by, its doping concentration can reach 1% atomic concentration.Doping concentration so high, a centre can be formd in silicon in band
Energy band so that the light radiation that silicon can be with absorbing wavelength more than 1.1 μm.The achievement in research from report it is bright since, generation is caused quickly
The attention of boundary various regions researcher, is more considered as a kind of brand-new material, can be in solar cell, the neck such as Infrared Detectors
There is important purposes in domain.
The proposition of patent of the present invention, exactly make use of this newfound material, solve that silicon substrate material is made into
As device is not responding to and in the extremely low problem of near infrared band responsiveness in infrared band of the wavelength more than 1.1 μm.The invention energy
It is combined with highly developed silicon materials semiconductor imaging device technique well, easy with realizing, cost is than existing
Infrared imaging device it is much lower, the advantages of light that can be well to near-infrared is responded.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, there is provided one kind enhancing silicon substrate image device（CCD（Electric charge
Coupled device）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Device）The method of infrared response.This kind of method not only can pole
The infrared response degree of big raising silicon substrate imager, also can well with the production work of existing silicon semiconductor material image device
Skill is integrated, and is integrated into existing production line.The infrared Enhanced Imaging device of non-brake method silicon substrate that is obtained using the method and existing
Silicon imager is compared to infrared response degree higher.Compared with existing infrared imaging device, because it is without refrigeration, using more
Convenient, volume is smaller, weight is lighter, and with great cost advantage.
The present invention is achieved in that a kind of enhancing silicon substrate image device CCD of construction or cmos device infrared response
Method, it is characterised in that comprise the following steps：
（1）High-concentration dopant is carried out to silicon substrate material by the method for laser or ion implanting；
（2）To step（1）The high-concentration dopant silicon materials for obtaining carry out thermal annealing or pulsed laser anneal；
（3）By standard CC D or cmos device technique, step is used（2）High concentration after the performance optimization for obtaining is mixed
Miscellaneous silicon base, makes image device.
According to enhancing silicon substrate image device CCD of the present invention or the method for cmos device infrared response, its feature
It is：Doping to silicon substrate material is completed by being interacted with silicon substrate material by laser in the presence of having dopant,
Or be done directly by ion implanting.
According to enhancing silicon substrate image device CCD of the present invention or the method for cmos device infrared response, its feature
It is：To the doping concentration of silicon substrate material 1013/cm3~1020/cm3Atomic concentration scope, dopant is the VIth race's element,
And sulphur, selenium, tellurium.
According to enhancing silicon substrate image device CCD of the present invention or the method for cmos device infrared response, its feature
It is：To step（1）The high-concentration dopant silicon materials for obtaining carry out thermal anneal process, optimize the performance of material；Annealing temperature is
300 DEG C -1200 DEG C, annealing time 10 seconds~5 hours.
According to enhancing silicon substrate image device CCD of the present invention or the method for cmos device infrared response, its feature
It is：To step（1）The high-concentration dopant silicon materials for obtaining carry out pulsed laser anneal to improve material property；
Laser used by described pulsed laser anneal process is high energy pulse laser, and its repetition rate is higher than
0.1Hz, single pulse energy is more than 1 μ J, laser wavelength can with but be not limited to 355 nm, 532 nm, 1064 nm, laser
Pulsewidth is 100ps-100ns, and laser is focused rear energy density and melts threshold value more than silicon materials.
According to enhancing silicon substrate image device CCD of the present invention or the method for cmos device infrared response, its feature
It is：The described laser carried out to silicon substrate material used by high-concentration dopant, its repetition is 1kHz-100MHz, pulse
Energy is higher than 1 μ J, and laser wavelength is 500nm-1600nm, and laser pulse duration range is 50fs-20ns, after laser is focused
Energy density exceedes silicon materials and melts threshold value.
A kind of device that high-concentration dopant and annealing are carried out to silicon substrate material, it is characterised in that：By processing laser,
Annealing laser, shutter（2、6）, spatial light reshaper（3、7）, condenser lens（4、8）, dichroic mirror, scanning galvanometer, vacuum
Room, heater, automatically controlled D translation platform, shutter controller, spatial light reshaper controller, heater controller, three-dimensional platform
Controller, computer composition；
The output beam of the processing laser is by after shutter, flat-top point being adjusted to by spatial light reshaper 3
Cloth, after being focused on by lens 4, scanning galvanometer is incided by dichroic mirror；The output laser of annealing laser used passes through light
Learn after shutter 6, flat-top distribution is adjusted to by spatial light reshaper 7, after being focused on by lens 8, reflected by dichroic mirror
Into scanning galvanometer, scanning galvanometer can adjust direction and the angle of shoot laser, be run through the window of vacuum chamber, incide sample
Product surface；So, original flavor annealing is can be carried out while processing, time cost is reduced.
According to a kind of device that high-concentration dopant and annealing are carried out to silicon substrate material of the present invention, it is characterised in that：
Processing laser（1）From the URANUS MJ-HIGH ENERGY MJ of Polaronyx Laser companies production
FEMTOSECOND FIBER LASER type high-energy repetition adjustable optic fibre femto-second lasers；Annealing laser（5）From Britain
The Naos v-g4 high-energy Gao Zhongying nanosecond lasers of Powerpulse companies production, shutter selects conventional mechanical shutter, space
Light shaping device selects Conventional spatial optical modulator product, and light path of processing and anneal is both needed to from 30cm condenser lenses；Dichroic mirror
Selection is, to 532nm high anti-dichroic mirror high to 1000nm；Scanning galvanometer is that the big light beam of thorlabs companies production is straight
Footpath scanning galvanometer system.
According to a kind of device that high-concentration dopant and annealing are carried out to silicon substrate material of the present invention, it is characterised in that：
Doping and annealing process are as follows；
（1）, place sample：Vacuum chamber is first turned on, sample to be processed is placed on specimen holder, and it is automatically controlled by three-dimensional
The position of platform courses sample, closes vacuum chamber afterwards；
（2）, vacuumize and be filled with required gas：Whole vacuum chamber is first evacuated to the maximum vacuum that can be reached, then by institute
The gas for needing is filled with, to the Torr of air pressure 500；
（3）, set running parameter：Base reservoir temperature, sweep limits, speed, laser energy size and repetition are set, are focused on thoroughly
The parameters such as mirror position；Setting base reservoir temperature is room temperature, and sweep limits is whole sample scope, sweep speed 10mm/s, repetition
10kHz, the position of condenser lens causes spot diameter for 0.5mm, laser power 1.5W, so, on per unit area, just
With about 300 pulsed irradiations, energy density about 1.5kJ/m2, the surface micro-structure size generated by the parameter can be controlled small
In 2 μm of yardsticks；
（4）, open shutter：After shutter is opened, scanning galvanometer will be operated；
（5）, scanning galvanometer work：Scanning galvanometer will position of the mobile beam on sample, be rapidly completed whole scanning
Process；The process can simultaneously complete doping, while generating micro-structural in silicon face；
（6）, annealing；
（7）, take out sample：After machining, sample is taken out.
According to a kind of device that high-concentration dopant and annealing are carried out to silicon substrate material of the present invention, it is characterised in that：
Step（4）In, after shutter is opened, scanning galvanometer will be operated, and can simultaneously carry out original flavor pulsed laser anneal；
Step（6）In, annealing is annealed from thermal annealing mode, 800 DEG C of annealing temperature, annealing time 10 minutes.
The invention has the advantages that：
（1）, it is of the present invention enhancing silicon substrate image device（CCD（CCD）Or CMOS（Complementary metal oxygen
Compound semiconductor）Device）The method of infrared response can be perfect integrated with existing CCD and CMOS technology, so what is be made from it is non-
The characteristics of refrigeration infrared Enhanced Imaging utensil of silicon substrate has low cost, can apply in the place low to cost requirement；
（2）, it is of the present invention enhancing silicon substrate image device（CCD（CCD）Or CMOS（Complementary metal oxygen
Compound semiconductor）Device）The method of infrared response uses silica-base material completely, without poisonous material, with safety, green
Feature；
（3）, it is of the present invention enhancing silicon substrate image device（CCD（CCD）Or CMOS（Complementary metal oxygen
Compound semiconductor）Device）The method of infrared response can be by increasing a side for intermediate band in the band gap of silicon substrate material
Method, increased the absorption and response of infrared band so that the infrared Enhanced Imaging device of obtained non-brake method silicon substrate can ring well
Answer the wavelength band of 800nm-1300nm.
（4）From unlike general infrared focal plane detector, silicon substrate image device is strengthened by of the present invention（CCD
（CCD）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Device）Non-brake method silicon obtained in the method for infrared response
The infrared Enhanced Imaging device of base loses the imaging capability of its visible light wave range while infrared response is obtained, not, i.e., general
Monitoring is compared with CCD and cmos device, and the good responding to visible light of energy as the device that it not only can be conventional with these also can
The infrared light radiation of response；
Brief description of the drawings
Fig. 1 is the preparation method flow chart of the infrared Enhanced Imaging device of non-brake method silicon substrate of the present invention
Fig. 2 is the experimental provision structure diagram that use laser of the present invention carries out high-concentration dopant and annealing
Fig. 3 is the specific workflow of doping of the present invention and annealing
Wherein, 1, processing laser, 2, shutter, 3, spatial light reshaper, 4, condenser lens, 5, annealing laser,
6th, shutter, 7, spatial light reshaper, 8, condenser lens, 9, dichroic mirror, 10, scanning galvanometer, 11, vacuum chamber, 12, sample, 13, plus
Hot device, 14, automatically controlled D translation platform, 15, shutter controller, 16, spatial light reshaper controller, 17, heat vacation device controller,
18th, automatically controlled D translation platform controller, 19, computer.
Specific embodiment
Below in conjunction with accompanying drawing 1-3, the present invention is described in detail, and the technical scheme in the embodiment of the present invention is carried out
Clearly and completely describe, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole implementation
Example.Based on the embodiment in the present invention, what those of ordinary skill in the art were obtained under the premise of creative work is not made
Every other embodiment, belongs to the scope of protection of the invention.
Below in conjunction with the accompanying drawings to enhancing silicon substrate image device of the present invention（CCD（CCD）Or CMOS（Mutually
Mend metal-oxide semiconductor (MOS)）Device）The method of infrared response is described further.
Embodiment, as shown in Figure 1：
The present invention provides a kind of enhancing silicon substrate image device（CCD（CCD）Or CMOS（Complementary metal is aoxidized
Thing semiconductor）Device）The method of infrared response, step is as follows：
（1）High-concentration dopant is carried out to silicon substrate material by the method for laser or ion implanting.Doping concentration exists
1013/cm3~1020/cm3Atomic concentration scope, dopant is the VIth race's element, and sulphur, selenium, tellurium.Here laser repetition is
1kHz-100MHz, single pulse energy is higher than 1 μ J, and laser wavelength is 500nm-1600nm, and laser pulse duration range is 50fs-
20ns.Output laser focuses on sample surfaces by condenser lens, and the energy density requirement of sample surfaces exceedes melts threshold value
1.5kJ/m2.Can be by controlling sweep speed and energy density come the size of micro-structural in control surface.If using ion
Injection mode, selection laser or other modes can on demand make micro- knot after ion implanting completion in sample surfaces
Structure, increases light absorbs.
（2）To step（1）The high-concentration dopant silicon materials for obtaining carry out thermal annealing or pulsed laser anneal.Annealing
Purpose be keep light absorbs remained unchanged compared to undoped p crystalline silicon obtain it is enhanced on the basis of, improvement sample crystallization degree, carry
The performance of sample high.If from thermal annealing mode, annealing temperature is 300 DEG C -1200 DEG C, annealing time 10 seconds~5 hours.If
From pulsed laser anneal, pulse laser should select high-energy laser, and its repetition rate is higher than 0.1Hz, single pulse energy
More than 1 μ J, laser wavelength can with but be not limited to 355 nm, 532 nm, 1064 nm, laser pulsewidth is 100ps-
100ns.Output laser focuses on sample surfaces by condenser lens, and the energy density requirement of sample surfaces exceedes melts threshold value
1.5kJ/m2.The degree of thermal annealing can be controlled by way of energy density and sweep speed.
（3）By standard CC D（CCD）Or CMOS（Complementary metal oxide semiconductors (CMOS)）Device technology, makes
Use step（2）High-concentration dopant silicon base after the performance optimization for obtaining, makes image device.The step is completely and existing process
Seamless integration-, with realize easily, low cost and other advantages.
Wherein, the apparatus structure sketch of high-concentration dopant and annealing is carried out to silicon substrate material as shown in Fig. 2 being used by processing
Laser 1, annealing laser 5, shutter 2,6, spatial light reshaper 3,7, condenser lens 4,8, dichroic mirror 9, scanning galvanometer 10,
Vacuum chamber 11, heater 13, automatically controlled D translation platform 14, shutter controller 15, spatial light reshaper controller 16, heater control
Device processed 17, three-dimensional platform controller 18, computer 19 is constituted.
URANUS MJ-HIGH ENERGY the MJ that processing is produced with laser from Polaronyx Laser companies
FEMTOSECOND FIBER LASER type high-energy repetition adjustable optic fibre femto-second lasers；Annealing laser device selects Britain
The Naos v-g4 high-energy Gao Zhongying nanosecond lasers of Powerpulse companies production, shutter selects conventional mechanical shutter, space
Light shaping device selects Conventional spatial optical modulator product, and light path of processing and anneal is both needed to from 30cm condenser lenses；Dichroic mirror
Selection is, to 532nm high anti-dichroic mirror high to 1000nm；Scanning galvanometer is that the big light beam of thorlabs companies production is straight
Footpath scanning galvanometer system；Vacuum chamber, heater, electronic control translation stage are conventional products；Described all controllers are supporting
Product；Computer 10 is general PC.
As shown in Fig. 2 the processing output beam of laser 1 by spatial light reshaper 3 by after shutter 5, adjusting
It is flat-top distribution, after being focused on by lens 4, scanning galvanometer 10 is incided by dichroic mirror；The output of annealing laser 5 used
Laser after being focused on by lens 8, is passed through by after optical shutter 6, flat-top distribution being adjusted to by spatial light reshaper 7
Dichroic mirror 9 is reflected into scanning galvanometer.Scanning galvanometer can adjust direction and the angle of shoot laser, be run through the window of vacuum chamber
Mouthful, incide sample surfaces.So, original flavor annealing is can be carried out while processing, time cost is reduced.
Doping and annealing detailed process as shown in figure 3, including：
1st, sample is placed：Vacuum chamber is first turned on, sample to be processed is placed on specimen holder, and it is automatically controlled flat by three-dimensional
Platform controls the position of sample, and vacuum chamber is closed afterwards.
2nd, vacuumize and be filled with required gas：Whole vacuum chamber is first evacuated to the maximum vacuum that can be reached（In the system
It is 10-6Torr）, then by required gas（The present embodiment selects SF6）It is filled with, to the Torr of air pressure 500.
The 3rd, running parameter is set：Base reservoir temperature, sweep limits, speed, laser energy size and repetition, condenser lens are set
The parameters such as position.In the present embodiment, it is room temperature to set base reservoir temperature, and sweep limits is whole sample scope, sweep speed
10mm/s, repetition 10kHz, the position of condenser lens cause spot diameter for 0.5mm, laser power 1.5W, so, in every list
In plane product, just there are about 300 pulsed irradiations, energy density about 1.5kJ/m2.The surface micro-structure generated by the parameter is big
It is small to control less than 2 μm of yardsticks.
4. shutter is opened：After shutter is opened, scanning galvanometer will be operated.Original flavor pulse laser can also simultaneously be carried out
Annealing.
5. scanning galvanometer work：Scanning galvanometer will position of the mobile beam on sample, be rapidly completed whole scanning plus
Work process.The process can simultaneously complete doping, while generating micro-structural in silicon face.
6. anneal：The present embodiment is annealed from thermal annealing mode, 800 DEG C of annealing temperature, annealing time 10 minutes.
7. sample is taken out：After machining, sample is taken out.
After sample completes annealing, it is possible to by CCD or CMOS fabrication line, image device is carried out by normal process
Making, the image device of gained works under non-brake method mode, has good responsiveness, energy to infrared and near-infrared radiation
Realize night vision function
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (5)
1. a kind of method of enhancing silicon substrate image device CCD or cmos device infrared response, it is characterised in that including following step
Suddenly：
（1）High-concentration dopant is carried out to silicon substrate material by the method for laser or ion implanting；
（2）To step（1）The high-concentration dopant silicon materials for obtaining carry out thermal annealing or pulsed laser anneal；
（3）By standard CC D or cmos device technique, step is used（2）High-concentration dopant silicon after the performance optimization for obtaining
Substrate, makes image device；
High-concentration dopant and annealing are carried out to silicon substrate material using following device, the device is by processing laser (1), annealing
Use laser（5）, shutter（2）、（6）, spatial light reshaper（3）、（7）, condenser lens（4）、（8）, dichroic mirror（9）, scanning shakes
Mirror（10）, vacuum chamber（11）, heater（13）, automatically controlled D translation platform（14）, shutter controller（15）, spatial light reshaper control
Device processed（16）, heater controller（17）, three-dimensional platform controller（18）, computer（19）Composition；
The processing laser（1）Output beam pass through shutter（5）Afterwards, by spatial light reshaper（3）It is adjusted to flat
Top distribution, by lens（4）After focusing, scanning galvanometer is incided by dichroic mirror（10）；Annealing laser used（5）It is defeated
Go out laser by optical shutter（6）Afterwards, by spatial light reshaper（7）Flat-top distribution is adjusted to, by lens（8）Focus on it
Afterwards, by dichroic mirror（9）It is reflected into scanning galvanometer；
Scanning galvanometer can adjust direction and the angle of shoot laser, be run through the window of vacuum chamber, incide sample surfaces；This
Sample, in-situ annealing can be just carried out while processing, reduce time cost.
2. the method for enhancing silicon substrate image device CCD according to claim 1 or cmos device infrared response, its feature
It is：To step（1）The high-concentration dopant silicon materials for obtaining carry out pulsed laser anneal to improve material property；
Laser used by described pulsed laser anneal process is high energy pulse laser, and its repetition rate is higher than 0.1Hz, single
Pulse energy is more than 1 μ J, and laser wavelength is 355 nm, 532 nm, 1064 nm, and laser pulsewidth is 100ps-100ns, is swashed
Light is focused rear energy density and melts threshold value more than silicon materials.
3. a kind of method of enhancing silicon substrate image device CCD or cmos device infrared response according to claim 1, its
It is characterised by：Processing laser（1）From the URANUS MJ-HIGH ENERGY of Polaronyx Laser companies production
MJ FEMTOSECOND FIBER LASER type high-energy repetition adjustable optic fibre femto-second lasers；Annealing laser（5）From
Powerpulse companies of Britain production Naos v-g4 high-energy Gao Zhongying nanosecond lasers, shutter from conventional mechanical shutter,
Spatial light reshaper selects Conventional spatial optical modulator product, and light path of processing and anneal is both needed to from 30cm condenser lenses；It is double
Look mirror selection is, to 532nm high anti-dichroic mirror high to 1000nm；Scanning galvanometer is the big light of thorlabs companies production
Beam diameter scanning galvanometer system.
4. a kind of method of enhancing silicon substrate image device CCD or cmos device infrared response according to claim 1, it is special
Levy and be：Doping and annealing process are as follows；
（1）, place sample：Vacuum chamber is first turned on, sample to be processed is placed on specimen holder, and by three-dimensional electric control platform
The position of sample is controlled, vacuum chamber is closed afterwards；
（2）, vacuumize and be filled with required gas：Whole vacuum chamber is first evacuated to the maximum vacuum that can be reached, then will be required
Gas is filled with, to the Torr of air pressure 500；
（3）, set running parameter：Base reservoir temperature, sweep limits, speed, laser energy size and repetition, condenser lens position are set
The parameter such as put；Setting base reservoir temperature be room temperature, sweep limits be whole sample scope, sweep speed 10mm/s, repetition 10kHz,
The position of condenser lens causes spot diameter for 0.5mm, laser power 1.5W, so, on per unit area, just has about
300 pulsed irradiations, energy density about 1.5kJ/m2, the surface micro-structure size generated by the parameter can be controlled less than 2 μm
Yardstick；
（4）, open shutter：After shutter is opened, scanning galvanometer will be operated；
（5）, scanning galvanometer work：Scanning galvanometer will position of the mobile beam on sample, be rapidly completed whole scanning machining
Process；The process can simultaneously complete doping, while generating micro-structural in silicon face；
（6）, annealing；
（7）, take out sample：After machining, sample is taken out.
5. a kind of method of enhancing silicon substrate image device CCD or cmos device infrared response according to claim 4, it is special
Levy and be：
Step（4）In, after shutter is opened, scanning galvanometer will be operated, and can simultaneously carry out home position pulse laser annealing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410055682.6A CN103794563B (en) | 2014-02-19 | 2014-02-19 | A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410055682.6A CN103794563B (en) | 2014-02-19 | 2014-02-19 | A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103794563A CN103794563A (en) | 2014-05-14 |
| CN103794563B true CN103794563B (en) | 2017-06-06 |
Family
ID=50670097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410055682.6A Expired - Fee Related CN103794563B (en) | 2014-02-19 | 2014-02-19 | A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103794563B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112067079B (en) * | 2020-09-17 | 2021-08-17 | 吉林大学 | Array type automobile oil tank liquid level measurement pressure sensor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2164107A2 (en) * | 2004-09-24 | 2010-03-17 | The President And Fellows Of Harvard College | Apparatus and method for fabrication of silicon-based detectors having laser-microstructured sulfur-doped surface layers |
| CN103268903A (en) * | 2013-05-13 | 2013-08-28 | 华南师范大学 | Method for manufacturing MSM photoelectric detector and MSM photoelectric detector |
| CN103268858A (en) * | 2013-05-13 | 2013-08-28 | 华南师范大学 | Method for preparing near-infrared light electrical silicon materials |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7425471B2 (en) * | 2004-06-18 | 2008-09-16 | Electro Scientific Industries, Inc. | Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset |
| CN102431957A (en) * | 2011-12-01 | 2012-05-02 | 中国科学院半导体研究所 | Method for manufacturing non-refrigerant thermal infrared detector based on black silicon material |
-
2014
- 2014-02-19 CN CN201410055682.6A patent/CN103794563B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2164107A2 (en) * | 2004-09-24 | 2010-03-17 | The President And Fellows Of Harvard College | Apparatus and method for fabrication of silicon-based detectors having laser-microstructured sulfur-doped surface layers |
| CN103268903A (en) * | 2013-05-13 | 2013-08-28 | 华南师范大学 | Method for manufacturing MSM photoelectric detector and MSM photoelectric detector |
| CN103268858A (en) * | 2013-05-13 | 2013-08-28 | 华南师范大学 | Method for preparing near-infrared light electrical silicon materials |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103794563A (en) | 2014-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sher et al. | Pulsed-laser hyperdoping and surface texturing for photovoltaics | |
| CN102812349B (en) | The online photoluminescence imaging of semiconductor equipment | |
| US8616023B2 (en) | Raised features on transparent substrates and related methods | |
| JP2013519505A (en) | Production of nanoparticle solutions by pulsed laser ablation | |
| CN102017088A (en) | Engineering flat surfaces on materials doped via pulsed laser irradiation | |
| Jia et al. | Highly responsive tellurium-hyperdoped black silicon photodiode with single-crystalline and uniform surface microstructure | |
| US8349713B2 (en) | High speed laser crystallization of particles of photovoltaic solar cells | |
| Palani et al. | Investigation on Laser-annealing and Subsequent Laser-nanotexturing of Amorphous Silicon (a-Si) Films for Photovoltaic Application. | |
| CN104923919B (en) | In the method that liquid film transparent material interface prepares loop configuration or dimpling lens | |
| Mutlak | Photovoltaic enhancement of Si micro-and nanostructure solar cells via ultrafast laser texturing | |
| CN103794563B (en) | A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response | |
| TWI509661B (en) | Method for producing epitaxial substrate for solid-state imaging device, and method of producing solid-state imaging device | |
| Wen et al. | Sulfur-hyperdoped silicon nanocrystalline layer prepared on polycrystalline silicon solar cell substrate by thin film deposition and nanosecond-pulsed laser irradiation | |
| CN104900487A (en) | Method and apparatus for preparing black silica by adopting lattice scanning | |
| CN110534597B (en) | Near-infrared photoelectric detector and preparation method thereof | |
| Parvin et al. | Efficiency enhancement using ArF laser induced micro/nanostructures on the polymeric layer of solar cell | |
| CN104773957B (en) | A kind of glass for adulterating gold nano grain and preparation method thereof and Gold Films Irradiated by Femtosecond Laser system | |
| Gečys et al. | Interaction of ultra-short laser pulses with CIGS and CZTSe thin films | |
| CN104157737A (en) | Method of manufacturing high-infrared absorption silicon material | |
| CN109378269B (en) | Preparation method for supersaturation doping and maintaining lattice structure of semiconductor surface | |
| TW201126740A (en) | Thin-film solar battery manufacturing method and thin-film solar battery manufacturing apparatus | |
| CN111037125A (en) | Processing equipment and preparation method of anti-ultraviolet lens | |
| Cao et al. | Effect of thermal annealing on sub-band-gap absorptance of microstructured silicon in air | |
| US11764323B2 (en) | Semiconductor photodiode functioning in a wide band range and obtaining method thereof | |
| JP2010283193A (en) | Method and apparatus for manufacturing semiconductor substrate dedicated to semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170606 Termination date: 20180219 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |