CN103268858A - Method for preparing near-infrared light electrical silicon materials - Google Patents
Method for preparing near-infrared light electrical silicon materials Download PDFInfo
- Publication number
- CN103268858A CN103268858A CN2013101739425A CN201310173942A CN103268858A CN 103268858 A CN103268858 A CN 103268858A CN 2013101739425 A CN2013101739425 A CN 2013101739425A CN 201310173942 A CN201310173942 A CN 201310173942A CN 103268858 A CN103268858 A CN 103268858A
- Authority
- CN
- China
- Prior art keywords
- annealing
- silicon chip
- crystal silicon
- electric field
- infrared light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a method for preparing near-infrared light electrical silicon materials. The method comprises a step of mingling sulphur to a crystal silicon wafer in a heavy doping mode, and a step of placing the crystal silicon wafer which is mingled with the sulphur in the heavy doping mode to an annealing device, wherein an electric field auxiliary annealing method is adopted, the voltage of the annealing electric field cannot break through the silicon wafer, the temperature of annealing is 550 DEG C, and the annealing process takes 6 hours. The method can keep the sulphur which is mingled into the crystal silicon wafer from being separated out in the process of annealing, the sulphur in a sulphur layer which is mingled into the crystal silicon wafer surface in the heavy doping mode keeps high concentration, and the photoelectric property of the near-infrared light silicon materials can be improved.
Description
Technical field
The invention belongs to the crystalline silicon technical field, be specifically related to a kind of preparation method of near infrared light electric material.
Background technology
The material of band impurity energy level in the middle of heavy doping element sulphur silicon materials (sulfur hypedoped silicon) are considered to form originates in research to black silicon for its research.Discover that black silicon is the heavy doping of element sulphur in the near-infrared portion of energy less than the light absorption physics root of energy gap.Not special phase transformation has taken place in heavy doping sulphur in the silicon, material, makes silicon materials significantly improve in the absorption of infrared part.Therefore, heavy doping element sulphur silicon materials have very important use potentiality in fields such as photovoltaic cell, communication transducers.
At present, in the prior art, the method for preparing heavy doping element sulphur silicon materials has laser supplementary doping method and ion implantation, and wherein the doping content of laser supplementary doping method (the highlyest is about 10
20Atom/cm
3) doping content that is higher than ion implantation (the highlyest is about 10
16Atom/cm
3), laser auxiliary etch method is that silicon chip is placed sulphur hexafluoride atmosphere, scan silicon face with femtosecond laser, downward 0 ~ the 500nm in silicon top layer partly forms element sulphur heavy doping, by control background gas pressure, femtosecond (or nanosecond) laser pulse number, parameters such as light intensity reach the purpose of the inner element sulphur doped level of control; Ion implantation is the method for common doped semiconductor since its have controllable doped concentration and the mechanical equilibrium condition of not being heated limit and widespread adoption in the heavy doping of semiconductor device.
Laser supplementary doping method is better than ion implantation, but in annealing process, sulphion can slowly be separated out the silicon top layer, causes the decline of laser doping layer sulphion concentration, influences its photoelectric properties.
Summary of the invention
The preparation method who the purpose of this invention is to provide a kind of near-infrared photoelectricity silicon materials, this method can hinder the separating out of element sulphur in annealing process of heavily doped element sulphur in the surface of crystalline silicon, make element sulphur maintenance higher concentration in the heavily doped element sulphur layer of surface of crystalline silicon, and can improve the photoelectric properties of near-infrared photoelectricity silicon materials.
Because electric field plays a part to hinder the sulphion drift in annealing process, so when annealing, place electric field by the crystal silicon chip with the heavy doping element sulphur, the element sulphur that can obtain big concentration on the crystal silicon chip surface mixes, band in the middle of forming, and then make crystal silicon chip have better photoelectric property.
Above-mentioned purpose of the present invention is achieved by the following technical solution: a kind of preparation method of near-infrared photoelectricity silicon materials, comprise crystal silicon chip heavy doping element sulphur, place annealing device to adopt the electric field auxiliary annealing crystal silicon chip of heavy doping element sulphur, the voltage swing of annealing electric field is for can not puncture silicon chip, annealing temperature is 550 ℃, and annealing time is 6 hours.
The anneal voltage of electric field of the present invention is preferably 10000V.
When the present invention places annealing device to carry out the electric field auxiliary annealing crystal silicon chip of heavy doping element sulphur, make the surface of crystal silicon chip heavy doping element sulphur towards the positive pole of electric field, and direction of an electric field is perpendicular to the surface of this crystal silicon chip heavy doping element sulphur.
As a kind of improvement of the present invention, in order to keep the heavily doped element sulphur concentration of surface of crystalline silicon unanimity, electric field of the present invention is preferably uniform electric field.
Electric field of the present invention preferably is arranged on inside or the outside of annealing device.
The present invention adopts during to crystal silicon chip heavy doping element sulphur laser to weigh sulfur doping.
Laser of the present invention is preferably femtosecond or nanosecond laser.
The present invention places chamber with crystal silicon chip, regulates chamber inner pressure and is preferably 1 * 10 by force
-3Below the pa, charge into sulfurous gas to chamber inner pressure and be preferably 0.5 ± 0.01Pa by force, regulate laser intensity and be preferably 1.8J/cm
2, adopt femtosecond or nanosecond laser facula scanning surface of crystalline silicon, when treating the inswept all silicon faces of laser, the chamber that is mounted with crystal silicon chip vacuumized to handle to vacuum degree be preferably 1 * 10
-3Below the pa, charge into inert gas to chamber inner pressure and be preferably 0.5 ± 0.01Pa by force, take out crystal silicon chip and place electric field to carry out auxiliary annealing.
Sulfurous gas of the present invention is preferably SF
6Described inert gas is preferably argon gas.
Crystal silicon chip of the present invention is preferably monocrystalline silicon piece.
Crystal silicon chip of the present invention need carry out ultrasonic cleaning to be handled, and the solvent that described ultrasonic cleaning is adopted is acetone.
Specifically, the preparation method of a kind of near-infrared photoelectricity silicon materials provided by the invention may further comprise the steps:
(1) surface of crystalline silicon is carried out clean;
(2) surface of crystalline silicon is weighed sulfur doping;
(3) crystal silicon chip behind the heavy sulfur doping places annealing device to carry out the electric field auxiliary annealing.
Compared with prior art, the present invention has following advantage: the crystal silicon chip behind the counterweight sulfur doping of the present invention, adopt electric field auxiliary when annealing, element sulphur is subjected to electric field action separating out of element sulphur is had hysteresis, thereby the silicon materials that preparation is formed have very high near infrared absorption coefficient.
Description of drawings
Fig. 1 is the preparation method's of near-infrared photoelectricity silicon materials of the present invention flow chart;
Fig. 2 is electric field auxiliary annealing schematic diagram in the embodiment of the invention 1, and the electrode that wherein forms electric field is placed in the annealing furnace; Wherein 1 is annealing furnace, and 2 is heater strip, and 3 is high-voltage DC power supply, and 4 is anodal, and 5 is T type support, and 6 is negative pole;
Fig. 3 is electric field auxiliary annealing schematic diagram in the embodiment of the invention 2, and the electrode that wherein forms electric field is placed on outside the annealing furnace.
Fig. 4 does not use its inner element sulphur concentration of electric field along with the relation of the degree of depth in embodiment 1 and 2, abscissa is the degree of depth apart from the crystal silicon chip surface, and ordinate is the concentration of element sulphur;
Fig. 5 has added its inner element sulphur concentration of electric field with depth relationship in embodiment 1 and 2, abscissa is the degree of depth apart from the crystal silicon chip surface, and ordinate is the concentration of element sulphur;
Fig. 6 is that absorption coefficient has added the performance in electric field and the crystalline silicon at added electric field not in embodiment 1 and 2, and abscissa is wavelength, and ordinate is the absorption coefficient of light.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
Embodiment 1
As shown in fig. 1, the preparation method of the near-infrared photoelectricity silicon materials that present embodiment provides contains following steps:
(1) monocrystalline silicon surface is cleaned, cleaning process comprises silicon is placed in the acetone soln, and the acetone soln that is soaking silicon chip is placed in the sonication chamber, opens the switch of sonication chamber, take out after 20 minutes and clean the silicon chip of finishing, it is loaded on the objective table of vacuum chamber;
(2) crystal silicon chip is weighed sulfur doping, vacuum chamber is vacuumized, regulating pressure is 1 * 10
-3Below the Pa, open charging valve, pour background gas SF with the flow of 40sccm
6, pressure is 0.5 ± 0.01pa to the vacuum chamber, treat that gas pressure in vacuum is stable after, open femtosecond (or nanosecond) laser, laser intensity is transferred to 1.8J/cm
2, open automatic control console, make the femtosecond laser hot spot surface of inswept monocrystalline silicon slowly, treat the inswept all silicon faces of laser after, vacuum chamber is evacuated to 1 * 10
-3Below the pa, in vacuum chamber, charge into argon gas to 0.5 ± 0.01pa, monocrystalline silicon is taken out, be placed on the annealing furnace objective table, carry out next step annealing in process;
(3) design of electric field auxiliary annealing annealing furnace and electric field is as follows: the outer wall position place is equipped with resistive heater 2 in the both sides of annealing furnace 1, the design of electric field as shown in Figure 2, the positive electrode 4 and the negative electrode 6 that produce electric field are arranged on the inside that annealing device is annealing furnace 1, wherein positive electrode is positioned at the top, negative electrode is positioned at the below, monocrystalline silicon piece places between two electrode plate, the size of electrode is designed to about 10cm * 10cm, just, negative electrode can be fixed in the annealing furnace by T shape support 5 grades, wherein crystal silicon chip is positioned on the crossbearer of T shape support, negative pole can be fixed on the perpendicular frame of T shape support, the material of T shape support is insulating material, and can anti-high temperature more than 1000 ℃.Monocrystalline silicon is weighed the surface of sulfur doping over against positive pole by laser, arbitrary position arranges an aperture on the inwall of annealing furnace, the radius of aperture can be used for passing the lead that connects positive and negative electrode for about 5mm, and this lead links to each other with the high-voltage DC power supply 6 of outside, lead is wanted and the annealing body of heater keeps airtight, top electrode connects positive source, and bottom electrode connects power cathode, and it is not puncture air that electric field level arranges condition, do not puncture silicon chip and get final product, specifically depend on the circumstances.Positive pole or the negative pole fixed form in annealing furnace is not limited to enumerating in the present embodiment among the present invention, only for for example, is not to its restriction herein.
The surface of crystalline silicon of laser processing is placed towards positive pole, open annealing furnace, and open high voltage source simultaneously, make direction of an electric field between the pole plate perpendicular to silicon face, it is not puncture air that electric field level arranges condition, do not puncture silicon chip, specifically depend on the circumstances, can adopt the high pressure of 10000v, adjusting annealing temperature is 550 ℃, after waiting to anneal 6 hours, the silicon chip taking-up is got final product.
Do not adopt when wherein annealing the electric field auxiliary annealing the heavy doping element sulphur the inner element sulphur of crystal silicon chip with depth relationship as shown in Figure 4, adopt during annealing present embodiment electric field auxiliary annealing the heavy doping element sulphur the inner element sulphur of crystal silicon chip with depth relationship as shown in Figure 5.By Fig. 4 and Fig. 5 as can be seen, adopt during annealing the crystal silicon chip surface of heavy doping element sulphur of present embodiment electric field auxiliary annealing along with the increase of the degree of depth among Fig. 5, the concentration of element sulphur descends and does not adopt the slow of electric field auxiliary annealing when annealing.
Wherein do not adopt the crystal silicon chip absorption coefficient of light of the heavy doping element sulphur of electric field auxiliary annealing, adopt the electric field auxiliary annealing the heavy doping element sulphur crystal silicon chip the absorption coefficient of light and without the heavy doping element sulphur, do not adopt the electric field auxiliary annealing common crystal silicon chip the absorption coefficient of light as shown in Figure 6, as can be seen from Figure 6, the crystal silicon chip absorption coefficient of light of the heavy doping element sulphur of employing electric field auxiliary annealing is with respect to the crystal silicon chip absorption coefficient of light of the heavy doping element sulphur that does not adopt the electric field auxiliary annealing with through the heavy doping element sulphur, do not adopt the absorption coefficient of light of the common crystal silicon chip of electric field auxiliary annealing to want high.
As shown in fig. 1, the preparation method of the near-infrared photoelectricity silicon materials that present embodiment provides contains following steps:
(1) monocrystalline silicon surface is cleaned, cleaning process comprises silicon was placed in the acetone soln some minutes, the acetone soln that is soaking silicon chip is placed in the sonication chamber, open the switch of sonication chamber, took out in lasting 20 minutes and clean the silicon chip of finishing, it is loaded on the objective table of vacuum chamber;
(2) crystal silicon chip is weighed sulfur doping, vacuum chamber is vacuumized, regulating pressure is 1 * 10
-3Below the Pa, open charging valve, pour background gas SF with the flow of 40sccm
6, pressure is 0.5 ± 0.01pa to the vacuum chamber, treat that gas pressure in vacuum is stable after, open femtosecond (or nanosecond) laser, laser intensity is transferred to 1.8J/cm
2, open automatic control console, make the femtosecond laser hot spot surface of inswept monocrystalline silicon slowly, treat the inswept all silicon faces of laser after, vacuum chamber is evacuated to 1 * 10
-3Below the pa, in vacuum chamber, charge into argon gas to 0.5 ± 0.01pa, monocrystalline silicon is taken out, be placed on the annealing furnace objective table, carry out next step annealing in process;
(3) design of electric field auxiliary annealing annealing furnace and electric field is as follows: the outer wall position place is equipped with resistive heater in the both sides of annealing furnace, the design of electric field as shown in Figure 3, the positive and negative electrode that produces electric field is arranged on the outside that annealing device is annealing furnace, wherein positive electrode is positioned at the annealing furnace top, negative electrode is positioned at the annealing furnace below, the size of electrode is designed to about 20cm * 20cm, annealing furnace is placed between two battery lead plates with a T type support, the making timbering material is insulating material, the battery lead plate top electrode connects positive pole, bottom crown connects negative pole, monocrystalline silicon piece is arranged in annealing furnace, in annealing furnace, be provided with T shape support, monocrystalline silicon is arranged on the crossbearer of T shape support, over against positive pole, the material of T shape support is insulating material to monocrystalline silicon by the surface of the heavy sulfur doping of laser, and can anti-high temperature more than 1000 ℃; The fixed form of positive pole or negative pole and monocrystalline silicon piece is not limited to enumerating in the present embodiment among the present invention, only for for example, is not to its restriction herein.
The surface of crystalline silicon of laser processing is placed towards positive pole, open annealing furnace, and open high voltage source simultaneously, make direction of an electric field between the pole plate perpendicular to silicon face, it is not puncture air that electric field level arranges condition, do not puncture silicon chip, specifically depend on the circumstances, can adopt the high pressure of 10000v, adjusting annealing temperature is 550 ℃, after waiting to anneal 6 hours, the silicon chip taking-up is got final product.
Do not adopt when wherein annealing the electric field auxiliary annealing the heavy doping element sulphur the inner element sulphur of crystal silicon chip with depth relationship as shown in Figure 4, adopt during annealing present embodiment electric field auxiliary annealing the heavy doping element sulphur the inner element sulphur of crystal silicon chip with depth relationship as shown in Figure 5.By Fig. 4 and Fig. 5 as can be seen, adopt during annealing the crystal silicon chip surface of heavy doping element sulphur of present embodiment electric field auxiliary annealing along with the increase of the degree of depth among Fig. 5, the concentration of element sulphur descends and does not adopt the slow of electric field auxiliary annealing when annealing.
Wherein do not adopt the crystal silicon chip absorption coefficient of light of the heavy doping element sulphur of electric field auxiliary annealing, adopt the electric field auxiliary annealing the heavy doping element sulphur crystal silicon chip the absorption coefficient of light and without the heavy doping element sulphur, do not adopt the electric field auxiliary annealing common crystal silicon chip the absorption coefficient of light as shown in Figure 6, as can be seen from Figure 6, the crystal silicon chip absorption coefficient of light of the heavy doping element sulphur of employing electric field auxiliary annealing is with respect to the crystal silicon chip absorption coefficient of light of the heavy doping element sulphur that does not adopt the electric field auxiliary annealing with through the heavy doping element sulphur, do not adopt the absorption coefficient of light of the common crystal silicon chip of electric field auxiliary annealing to want high.
The present invention will be described more than to enumerate specific embodiment.It is pointed out that above embodiment only for the invention will be further described, does not represent protection scope of the present invention, nonessential modification and adjustment that other people prompting according to the present invention is made still belong to protection scope of the present invention.
Claims (10)
1. the preparation method of near-infrared photoelectricity silicon materials, comprise crystal silicon chip heavy doping element sulphur, it is characterized in that: place annealing device to adopt the electric field auxiliary annealing crystal silicon chip of heavy doping element sulphur, the voltage swing of annealing electric field is for can not puncture silicon chip, annealing temperature is 550 ℃, and annealing time is 6 hours.
2. the preparation method of near infrared light electric material according to claim 1 is characterized in that: the voltage of annealing electric field is 10000V.
3. the preparation method of near infrared light electric material according to claim 1, it is characterized in that: when placing annealing device to carry out the electric field auxiliary annealing crystal silicon chip of heavy doping element sulphur, make the surface of crystal silicon chip heavy doping element sulphur towards the positive pole of electric field, and direction of an electric field is perpendicular to the surface of this crystal silicon chip heavy doping element sulphur.
4. the preparation method of near infrared light electric material according to claim 3, it is characterized in that: described electric field is uniform electric field.
5. the preparation method of near infrared light electric material according to claim 1 is characterized in that: adopt laser to weigh sulfur doping during to crystal silicon chip heavy doping element sulphur.
6. want the preparation method of 5 described near infrared light electric materials according to right, it is characterized in that: described laser is femtosecond or nanosecond laser.
7. the preparation method of near infrared light electric material according to claim 6 is characterized in that: during to crystal silicon chip heavy doping element sulphur, crystal silicon chip is placed chamber, regulating chamber inner pressure is by force 1 * 10
-3Below the pa, charging into sulfurous gas to chamber inner pressure is by force 0.5 ± 0.01Pa, and the adjusting laser intensity is 1.8J/cm
2, adopt femtosecond or nanosecond laser facula scanning surface of crystalline silicon, when treating the inswept all silicon faces of laser, with the chamber that is mounted with crystal silicon chip vacuumize handle to vacuum degree be 1 * 10
-3Below the pa, charging into inert gas to chamber inner pressure is by force 0.5 ± 0.01Pa, takes out crystal silicon chip and places electric field to carry out auxiliary annealing.
8. the preparation method of near infrared light electric material according to claim 7, it is characterized in that: described sulfurous gas is SF
6Described inert gas is argon gas.
9. according to the preparation method of each described near infrared light electric material of claim 1-8, it is characterized in that: described crystal silicon chip is monocrystalline silicon piece.
10. the preparation method of near infrared light electric material according to claim 9 is characterized in that: described crystal silicon chip need carry out ultrasonic cleaning to be handled, and the solvent that described ultrasonic cleaning is adopted is acetone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310173942.5A CN103268858B (en) | 2013-05-13 | 2013-05-13 | A kind of preparation method of near-infrared photoelectricity silicon materials |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310173942.5A CN103268858B (en) | 2013-05-13 | 2013-05-13 | A kind of preparation method of near-infrared photoelectricity silicon materials |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103268858A true CN103268858A (en) | 2013-08-28 |
| CN103268858B CN103268858B (en) | 2015-11-18 |
Family
ID=49012480
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310173942.5A Expired - Fee Related CN103268858B (en) | 2013-05-13 | 2013-05-13 | A kind of preparation method of near-infrared photoelectricity silicon materials |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103268858B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794563A (en) * | 2014-02-19 | 2014-05-14 | 金蔚 | Infrared response method for strengthening silicon-based image device CCD or CMOS device |
| CN112067079A (en) * | 2020-09-17 | 2020-12-11 | 吉林大学 | Array type automobile oil tank liquid level measurement pressure sensor and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323061A (en) * | 2000-03-30 | 2001-11-21 | 国际商业机器公司 | DC or AC electric field auxiliary annealing |
| US20060231914A1 (en) * | 2001-05-25 | 2006-10-19 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| CN101824654A (en) * | 2009-03-04 | 2010-09-08 | 中国科学院半导体研究所 | Method for manufacturing black silicon material |
| CN101950777A (en) * | 2010-09-01 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing doped black silicon in situ |
| CN102737967A (en) * | 2011-03-30 | 2012-10-17 | 英飞凌科技股份有限公司 | Semiconductor device and substrate with chalcogen doped region |
| CN102903781A (en) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | Silicon-based near infrared photoelectric detector structure and manufacturing method thereof |
| CN102938435A (en) * | 2012-11-23 | 2013-02-20 | 中国科学院半导体研究所 | Method for preparing over-saturation sulphur element doped silicon |
| CN102976326A (en) * | 2012-12-17 | 2013-03-20 | 南开大学 | Method for preparing sulfur-doped silicon nano-particles |
-
2013
- 2013-05-13 CN CN201310173942.5A patent/CN103268858B/en not_active Expired - Fee Related
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1323061A (en) * | 2000-03-30 | 2001-11-21 | 国际商业机器公司 | DC or AC electric field auxiliary annealing |
| US20060231914A1 (en) * | 2001-05-25 | 2006-10-19 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| CN101824654A (en) * | 2009-03-04 | 2010-09-08 | 中国科学院半导体研究所 | Method for manufacturing black silicon material |
| CN101950777A (en) * | 2010-09-01 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing doped black silicon in situ |
| CN102737967A (en) * | 2011-03-30 | 2012-10-17 | 英飞凌科技股份有限公司 | Semiconductor device and substrate with chalcogen doped region |
| CN102903781A (en) * | 2012-08-28 | 2013-01-30 | 中国科学院半导体研究所 | Silicon-based near infrared photoelectric detector structure and manufacturing method thereof |
| CN102938435A (en) * | 2012-11-23 | 2013-02-20 | 中国科学院半导体研究所 | Method for preparing over-saturation sulphur element doped silicon |
| CN102976326A (en) * | 2012-12-17 | 2013-03-20 | 南开大学 | Method for preparing sulfur-doped silicon nano-particles |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103794563A (en) * | 2014-02-19 | 2014-05-14 | 金蔚 | Infrared response method for strengthening silicon-based image device CCD or CMOS device |
| CN103794563B (en) * | 2014-02-19 | 2017-06-06 | 金蔚 | A kind of method of enhancing silicon substrate image device CCD or cmos device infrared response |
| CN112067079A (en) * | 2020-09-17 | 2020-12-11 | 吉林大学 | Array type automobile oil tank liquid level measurement pressure sensor and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103268858B (en) | 2015-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109244340B (en) | Functional diaphragm coating material of lithium-sulfur battery and preparation method thereof | |
| CN102629643B (en) | Manufacturing method of high-square-resistance solar cell | |
| Iza et al. | Tuning of defects in ZnO nanorod arrays used in bulk heterojunction solar cells | |
| JP6248060B2 (en) | Method for forming local conductive region in β-Ga2O3 single crystal, and β-Ga2O3 single crystal having local conductive region | |
| Omar et al. | Investigation on dielectric constant of zinc oxide | |
| CN104576347B (en) | The ameliorative way of IGBT back face metalizations | |
| CN112768564B (en) | Light injection passivation method for Topcon battery | |
| CN103268858A (en) | Method for preparing near-infrared light electrical silicon materials | |
| CN107690695B (en) | Method for manufacturing semiconductor element | |
| JP2008282921A (en) | Method for introducing dopant element into silicon layer, manufacturing method for polysilicon solar battery, manufacturing method for polysilicon thin-film transistor, and apparatus for introducing dopant element into silicon layer | |
| KR20130126627A (en) | Method for the hydrogen passivation of semiconductor layers | |
| CN105308757B (en) | For reducing the method deteriorated caused by the excess carriers in silicon substrate | |
| WO2012040917A1 (en) | Shallow junction solar battery and manufacturing method thereof | |
| CN112144117B (en) | Hydrogen, phosphorus and nitrogen doped monocrystalline silicon, preparation method thereof and solar cell | |
| CN110752159B (en) | Method for Annealing Gallium Oxide Material | |
| JPH01290267A (en) | Manufacture of photoelectric conversion element | |
| CN103268903B (en) | The preparation method of a kind of MSM photoelectric detector and MSM photoelectric detector | |
| CN105405980A (en) | Annealing method for photo-anode of perovskite solar cell | |
| CN102191563B (en) | Preparation method of codoped silicon-base impurity intermediate belt material | |
| CN113913771A (en) | Method for manufacturing high-activation-rate doped aluminum nitride single crystal film | |
| CN103014839B (en) | A kind of P-type dopant and preparation method thereof | |
| CN106409978A (en) | Preparation method of P-type single crystal solar cell | |
| CN107887471B (en) | The method for reducing p-type solar cell photo attenuation | |
| CN105070789B (en) | A kind of preparation method of crystal silicon solar energy battery emitter stage | |
| KR980002312A (en) | Polycrystalline Silicon Film Formation Method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151118 Termination date: 20210513 |